CN108008274A - A kind of test method and system for carrying out radiation effect synergistic effect using heavy ion - Google Patents
A kind of test method and system for carrying out radiation effect synergistic effect using heavy ion Download PDFInfo
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- CN108008274A CN108008274A CN201711157327.XA CN201711157327A CN108008274A CN 108008274 A CN108008274 A CN 108008274A CN 201711157327 A CN201711157327 A CN 201711157327A CN 108008274 A CN108008274 A CN 108008274A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention discloses a kind of test method and system for carrying out radiation effect synergistic effect using heavy ion, wherein, this method includes carrying out single-particle inversion sensitivity tests to device using heavy ion first, several accumulated dose values incremented by successively are set, the irradiation of each accumulated dose value is carried out to device using same heavy ion, after the irradiation of each accumulated dose value is completed, SEU cross section test will be carried out, the change of power consumption of real-time monitor part during total dose irradiation.After all total dose irradiations and SEU cross section tests are completed, irradiation test terminates, and obtains the SEU cross section experimental data after device difference total dose irradiation, and contrast heavy ion total dose irradiation causes the change of device SEU cross section.Will be more deeply and comprehensive to the understanding of Space Radiation Effects by the irradiation test data that this method obtains, it is the radiation hardening analysis of device and the suggestion of design proposition science.
Description
Technical field
The invention belongs to Space Radiation Effects field, more particularly to one kind to carry out radiation effect synergistic effect using heavy ion
Test method and system.
Background technology
Spacecraft is operated in a very severe space radiation environment, the radiation belt of the earth, solar cosmic ray and the milky way
Proton, electronics, α particles and heavy ion in ultra rays are incided inside spacecraft, and electricity occurs with Spacecraft Electronic component
From effect, cause electronic component to occur abnormal or even damage, influence the normal work of spacecraft.
Semiconductor devices space ionization radiation effect is mainly shown as single particle effect and total dose effect.Single particle effect
Be single high-energy heavy ion due to itself stronger ionizing power, incide the sensitive nodes of device, produced by ionization
Raw electron-hole pair, electric charge produce transient pulse, influence device by spreading and drifting about collected by the sensitive nodes of device
Normal work；Total dose effect is mainly that a large amount of charged particles or gamma-rays are incided in semiconductor devices oxide, is passed through
Ionization produces oxide capture electric charge and interfacial state trapped charge, with the increase of accumulation irradiation dose, stored charge
Increase will cause performance of semiconductor device to change, such as electrical parameter drift, leakage current increase, 1/f noise change, serious shadow
The normal utilization of Chinese percussion instrument part, even results in the failure of device.
For new spacecraft, the long-life is the development trend of following space flight and survey of deep space, and the GEO spacecraft service lifes will be long
Up to 15 years, the MEO spacecraft service lifes will be up to 10 years, and long-life spacecraft in-orbit period, various electronic component times in orbit prolong
Long, particularly in the solar activity peak year, the accumulation irradiation dose that these electronic components are subject to dramatically increases, and space environment is one
The radiation environment of a synthesis, space flight component are irradiated be subject to various particles at the same time, and total dose effect and single particle effect are common
In the presence of there is synergistic effect.But when Current terrestrial carries out Flouride-resistani acid phesphatase assessment to aerospace electronic component, in order to assess single effect
Influence to device, it is assumed that the radiation effect of electronic component is independent, does not consider the synergy of both effects,
When device time in orbit is shorter, this hypothesis is to set up.However as the change of space flight component operation environment and pattern,
The influence of this synergistic effect is just increasingly prominent, it is necessary to consider the synergistic effect of space ionising radiation, it is necessary to provides space electricity
From the test method of radiation effect synergistic effect.
The content of the invention
Present invention solves the technical problem that it is：Overcome the deficiencies of the prior art and provide a kind of utilization heavy ion and carry out spoke
Penetrate the test method and system of effect synergistic effect, the various radiation that can be subject in space with more life-like simulation component
Threaten, so that the radioresistance characteristic of component be appreciated more fully, prevent the failure of component, ensure that spacecraft is securely and reliably transported
OK.
The object of the invention is achieved by the following technical programs：A kind of according to an aspect of the invention, there is provided profit
Carry out the test method of radiation effect synergistic effect with heavy ion, the described method comprises the following steps：Step 1：It is selected to be illuminated
Device, precognition are illuminated device radiation-resisting performance parameter, set up single ion effect test system, select suitable heavy ion kind
Class, debugs heavy ion irradiation parameter；Step 2：System is tested to being illuminated device power-up and write-in number using single ion effect
According to SEU cross section test being carried out to being illuminated device using default heavy ion fluence rate, when being illuminated device
When single event upset number exceedes default rollover event number, stop irradiation, calculate SEU cross section；Step 3：If
Put several accumulated dose values incremented by successively；Step 4：The irradiation of each accumulated dose value is carried out to device using heavy ion of the same race, often
After one accumulated dose value irradiation is completed, the SEU cross section test in step 2 will be carried out, wherein, it is total at each
In the irradiation process of dose value, it is illuminated device and is in powering state, monitors and remember by single ion effect test system synchronization
Record is illuminated the curent change of device；Step 5：When completing all irradiation of accumulated dose value and SEU cross section test, spoke
According to off-test, the change curve of SEU cross section and device operation current with each accumulated dose value is drawn out, obtains device
SEU cross section with each accumulated dose value changing rule.
It is described anti-in the step 1 in the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion
It is total that Radiation Characteristics parameter includes static working current, single-particle inversion LET threshold values, single-particle inversion saturation section and radioresistance
Dose value.
In the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion, in the step 1, selection is closed
Suitable ion species include：Selected heavy ion can incide device inside, and range is not less than 30 μm, and can make to be illuminated
Single-particle inversion occurs for device, i.e. the LET values of heavy ion are more than the single-particle inversion LET threshold values for being illuminated device.
It is default in the step 2 in the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion
Heavy ion fluence rate tests system to be illuminated device when heavy ion incidence, by single ion effect and observes that being illuminated device puts down
It is per minute that corresponding heavy ion fluence rate during 10 single event upsets occurs.
In the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion, in the step 2, single-particle
The calculation formula of upset cross section is as follows：
Wherein, NSEURepresent single event upset number, F be unit area ion fluence, NbTo be illuminated the appearance of device
Amount.
In the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion, default rollover event is tested every time
Number is no less than 300.
It is described to be illuminated in step 1 in the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion
Device is Static RAM.
In the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion, the Static RAM feature
Size is 0.5 μm, operating current 50mA, and single-particle inversion saturation section is 5.7 × 10-8cm2/ bit, LET threshold value are 6MeV ˙
cm2/ mg, Flouride-resistani acid phesphatase accumulated dose 100krad.
In the above-mentioned test method for carrying out radiation effect synergistic effect using heavy ion, in step 3, the irradiation of setting
Accumulated dose value is no less than 5.
Heavy ion that is above-mentioned to be carried out using heavy ion in the test method that radiation effect acts synergistically, being carried out in step 4
Total dose irradiation, the formula for the accumulated dose value that the heavy ion irradiation fluence that heavy ion source provides is scaled irradiation are as follows：
D=1.6 × 10-8× LET × Φ,
Wherein, D is the accumulated dose value of irradiation, and LET is linear energy transfer of the heavy ion in silicon, and Φ is heavy ion irradiation
Fluence.
According to another aspect of the present invention, a kind of survey for carrying out radiation effect synergistic effect using heavy ion is additionally provided
Test system, including：First module, is illuminated device, precognition is illuminated device radiation-resisting performance parameter, sets up isolated for selected
Sub- effect tests system, selects suitable ion species, debugs heavy ion irradiation parameter；Second module, it is isolated for utilizing
Sub- effect test system to being illuminated device power-up and write-in data, using default heavy ion fluence rate to be illuminated device into
Row SEU cross section test, when be illuminated device occur single event upset number exceed default rollover event number when,
Stop irradiation, calculate SEU cross section；3rd module, for setting several accumulated dose values incremented by successively；4th mould
Block, for carrying out the irradiation of each accumulated dose value to device using heavy ion of the same race, after the irradiation of each accumulated dose value is completed, all
The SEU cross section test in step 2 is carried out, wherein, in the irradiation process of each accumulated dose value, it is illuminated device
Part is in powering state, and the curent change for being illuminated device is monitored and recorded by single ion effect test system synchronization；5th
Module, for when completing all irradiation of accumulated dose value and SEU cross section test, irradiation test to terminate, and draws out simple grain
Sub- upset cross section and device operation current obtain device SEU cross section with each total agent with the change curve of each accumulated dose value
The changing rule of value.
The present invention has the advantages that compared with prior art：
The testing process for carrying out radiation effect synergistic effect using heavy ion is this method provide, is obtained by this method
Irradiation test data will be more deeply and comprehensive to the understanding of Space Radiation Effects, is the radiation hardening analysis and design of device
The suggestion of proposition science.
(1) the various radiation threats that the more life-like simulation component of the present invention is subject in space, so as to prevent in advance
The failure of component, guarantee is provided for the long-life of spacecraft.
(2) method of the invention has been filled up carries out Space Radiation Effects synergistic effect ground simulation survey using a kind of radiation source
The blank of examination.
(3) method of the invention carries out total dose irradiation using heavy ion first, and accumulated dose is carried out using cobalt source with conventional
Irradiance method is contrasted and supplements, more comprehensive to the radioresistance characteristic research of device.
(4) test method of the invention is simple, and total dose irradiation and single-particle inversion test share a kind of radiation source and one
Cover test system, it is necessary to hardware device it is few, easy to operate, economical and efficient.
(5) testing process for carrying out radiation effect synergistic effect using heavy ion is this method provide, is obtained by this method
Irradiation test data will to the understanding of Space Radiation Effects more deeply and comprehensively, be device radiation hardening analysis and
Design the suggestion of proposition science.
Brief description of the drawings
By reading the detailed description of hereafter preferred embodiment, it is various other the advantages of and benefit it is common for this area
Technical staff will be clear understanding.Attached drawing is only used for showing the purpose of preferred embodiment, and is not considered as to the present invention
Limitation.And in whole attached drawing, identical component is denoted by the same reference numerals.In the accompanying drawings：
Fig. 1 is the flow of the test method provided in an embodiment of the present invention for carrying out radiation effect synergistic effect using heavy ion
Figure；
Fig. 2 is SRAM device SEU cross section showing with the variation relation of irradiation dose provided in an embodiment of the present invention
It is intended to；
Fig. 3 is schematic diagram of the SRAM device operating current provided in an embodiment of the present invention with the variation relation of irradiation dose.
Embodiment
The exemplary embodiment of the disclosure is more fully described below with reference to accompanying drawings.Although the disclosure is shown in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
Limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
Completely it is communicated to those skilled in the art.It should be noted that in the case where there is no conflict, embodiment in the present invention and
Feature in embodiment can be mutually combined.Below with reference to the accompanying drawings and the present invention will be described in detail in conjunction with the embodiments.
A kind of test method for carrying out radiation effect synergistic effect using heavy ion is present embodiments provided, this method includes
Following steps：
(1) select and be illuminated device, precognition is illuminated device radiation-resisting performance parameter, sets up single ion effect test system
System, selects suitable ion species, debugs heavy ion irradiation parameter, completes predose preparation；In step 1, anti-spoke
Include static working current, single-particle inversion LET threshold values, single-particle inversion saturation section and the total agent of radioresistance according to characterisitic parameter
Value.Suitable ion species are selected to include：Selected heavy ion can incide device inside, and range is not less than 30 μm, and
It can make to be illuminated device generation single-particle inversion, i.e. the LET values of heavy ion are more than the single-particle inversion LET thresholds for being illuminated device
Value.
(2) system is tested to being illuminated device power-up and write-in data using single ion effect, using default heavy ion
Fluence rate carries out SEU cross section test to being illuminated device, exceedes when being illuminated device generation single event upset number
During default rollover event number, stop irradiation, calculate SEU cross section.
Default heavy ion fluence rate passes through single ion effect and tests system observation to be illuminated device when heavy ion incidence
To corresponding heavy ion fluence rate when being illuminated device average minute clock 10 single event upsets of generation.
The calculation formula of SEU cross section is as follows：
Wherein, NSEURepresent single event upset number, F be unit area ion fluence, NbTo be illuminated the appearance of device
Amount, in order to make SEU cross section data have good statistical law, tests default rollover event number and is no less than every time
300.
(3) several are set to irradiate accumulated dose value, heavy ion irradiation accumulated dose value meets equation below with irradiation fluence：
D=1.6 × 10-8× LET × Φ,
Wherein, D is the accumulated dose value of irradiation, and LET is linear energy transfer of the heavy ion in silicon, and Φ is heavy ion irradiation
Fluence.
(4) irradiation of each accumulated dose value is carried out to device using heavy ion, the irradiation fluence provided by heavy ion source is supervised
The accumulated dose value for whether having reached irradiation is surveyed, after the irradiation of each accumulated dose value is completed, step (2), i.e. simple grain will be carried out
Sub- upset cross section test.
In the irradiation process of each accumulated dose value, it is illuminated device and is in powering state, surveyed by single ion effect
Test system Simultaneous Monitoring simultaneously records the curent change for being illuminated device.
(5) after all irradiation of accumulated dose value and SEU cross section test is completed, irradiation test terminates, and completes to utilize
Heavy ion carries out the experiment test of radiation effect synergistic effect, draws out SEU cross section and device operation current with irradiation
The change curve of accumulated dose value, obtains changing rule of the device SEU cross section with irradiation accumulated dose value.It is single by counting
Particle upset cross section studies and judges the radioresistance characteristic of device with the changing rule of irradiation accumulated dose, and data ginseng is provided for the type selecting of device
Examine.
Above-mentioned step is illustrated with specific embodiment below, its key step is as follows：
(10) it is for 0.5 μm of Static RAM (SRAM) according to the 1st step in flow of the present invention, selection characteristic size
Measurand, device operation current 50mA, single-particle inversion saturation section are 5.7 × 10-8cm2/ bit, LET threshold value are 6MeV
˙cm2/ mg, Flouride-resistani acid phesphatase accumulated dose 100krad.
(20) single particle effect test system is built, above-mentioned device is positioned over special test slot, debugs test system,
The 3.7Mev/u provided using accelerator112Sn ion beams, its linear energy transfer (LET) value in silicon is 61.3Mev ˙ cm2/
Mg, it is about 40 μm in silicon medium range, and selected heavy ion is more than 30 μm in silicon medium range, and can make device that single-particle occur and turn over
Turn, meet test request.
(30) further, utilization is above-mentioned112Sn heavy ions are carried out SEU cross section to Static RAM and are surveyed
Examination, when single event upset number is more than 300, then stopping SEU cross section test, single-particle is calculated according to equation below
Upset cross section：
Wherein, NSEURepresent single event upset number, F be unit area in ion fluence, unit ions/cm2, Nb
For the capacity of measured device.
(40) further, according to the situation of device Flouride-resistani acid phesphatase accumulated dose, preset incremental accumulated dose value 10krad,
110krad, 1200krad, 4700krad, 6000krad, 11000krad, irradiation accumulated dose are scaled irradiation note by following formula
Amount：
D=1.6 × 10-8×LET×Φ
D is to irradiate accumulated dose, unit rad in formula；LET is linear energy transfer of the heavy ion in silicon, unit MeV
cm2/g；Φ is heavy ion irradiation fluence, unit ions/cm2。
(50) further, utilize112Sn heavy ions carry out the total dose irradiation of 10krad points, and dosage rate elects 50rad/ as
S, the operating current of real-time monitor part while irradiation.
(60) after the completion of step (50), recycle112Sn ions carry out the test of step (30) SEU cross section.
(70) further, repeat step (50) and step (60), that is, be sequentially completed the weight of remaining each irradiation accumulated dose point
Ion irradiation, after each irradiation accumulated dose point irradiation terminates, SEU cross section test is carried out according to step (30).
(80) when completing all accumulated dose value irradiation and SEU cross section is tested, irradiation test terminates, and arranges
Test data, the SEU cross section obtained as shown in Figures 2 and 3 work with the variation relation figure and device of irradiation accumulated dose
Electric current is with the variation relation figure for irradiating accumulated dose.
The various radiation threats that the more life-like simulation component of the present embodiment is subject in space, so that prevention member in advance
The failure of device, guarantee is provided for the longlife noodles of spacecraft；Fill up and Space Radiation Effects collaboration is carried out using a kind of radiation source
Act on the blank of ground simulation test；Total dose irradiation is carried out using heavy ion first, accumulated dose is carried out using cobalt source with conventional
Irradiance method is contrasted and supplements, more comprehensive to the radioresistance characteristic research of device.The test method of the present embodiment is simple,
Total dose irradiation and single-particle inversion test share a kind of radiation source and a set of test system, it is necessary to hardware device it is few, easy behaviour
Make, economical and efficient.
The present embodiment additionally provides a kind of test system for carrying out radiation effect synergistic effect using heavy ion, including：The
One module, the second module, the 3rd module, the 4th module and the 5th module.Wherein, the first module, device is illuminated for selected,
Precognition is illuminated device radiation-resisting performance parameter, sets up single ion effect test system, selects suitable ion species, debug
Heavy ion irradiation parameter；Second module, for testing system to being illuminated device power-up and write-in data using single ion effect,
SEU cross section test is carried out to being illuminated device using default heavy ion fluence rate, simple grain occurs when being illuminated device
When sub- rollover event number exceedes default rollover event number, stop irradiation, calculate SEU cross section；3rd module, is used for
Several accumulated dose values incremented by successively are set；4th module, for carrying out each accumulated dose value to device using heavy ion of the same race
Irradiation, each accumulated dose value irradiation complete after, will carry out in step 2 SEU cross section test, wherein,
In the irradiation process of each accumulated dose value, it is illuminated device and is in powering state, it is same to test system by single ion effect
Step monitors and records the curent change for being illuminated device；5th module, for when all accumulated dose values irradiation of completion and single-particle
When upset cross section is tested, irradiation test terminates, and draws out SEU cross section and device operation current with each accumulated dose value
Change curve, obtains changing rule of the device SEU cross section with each accumulated dose value.
Embodiment described above is the present invention more preferably embodiment, and those skilled in the art is in this hair
The usual variations and alternatives carried out in the range of bright technical solution should all include within the scope of the present invention.
Claims (10)
1. it is a kind of using heavy ion carry out radiation effect synergistic effect test method, it is characterised in that the described method includes with
Lower step：
Step 1：Selected to be illuminated device, precognition is illuminated device radiation-resisting performance parameter, sets up single ion effect test system
System, selects suitable ion species, debugs heavy ion irradiation parameter；
Step 2：System is tested to being illuminated device power-up and write-in data using single ion effect, using default heavy ion
Fluence rate carries out SEU cross section test to being illuminated device, exceedes when being illuminated device generation single event upset number
During default rollover event number, stop irradiation, calculate SEU cross section；
Step 3：Several accumulated dose values incremented by successively are set；
Step 4：The irradiation of each accumulated dose value is carried out to device using heavy ion of the same race, the irradiation completion of each accumulated dose value
Afterwards, the SEU cross section test in step 2 is carried out, wherein, in the irradiation process of each accumulated dose value, by spoke
Powering state is according to device, the curent change for being illuminated device is monitored and recorded by single ion effect test system synchronization；
Step 5：When completing all irradiation of accumulated dose value and SEU cross section test, irradiation test terminates, and draws out list
Particle upset cross section and device operation current obtain device SEU cross section with each total with the change curve of each accumulated dose value
The changing rule of dose value.
2. the test method according to claim 1 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
In the step 1, the radiation-resisting performance parameter includes static working current, single-particle inversion LET threshold values, single-particle and turns over
Turn saturation section and radioresistance accumulated dose value.
3. the test method according to claim 1 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
In the step 1, suitable ion species are selected to include：Selected heavy ion can incide device inside, and range is not small
In 30 μm, and it can make to be illuminated device generation single-particle inversion, i.e. the LET values of heavy ion are more than the single-particle for being illuminated device
Overturn LET threshold values.
4. the test method according to claim 1 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
In the step 2, default heavy ion fluence rate is tested to be illuminated device when heavy ion incidence by single ion effect
System observes that being illuminated device average minute clock occurs corresponding heavy ion fluence rate during 10 single event upsets.
5. the test method according to claim 1 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
In the step 2, the calculation formula of SEU cross section is as follows：
<mrow>
<mi>&sigma;</mi>
<mo>=</mo>
<mfrac>
<msub>
<mi>N</mi>
<mrow>
<mi>S</mi>
<mi>E</mi>
<mi>U</mi>
</mrow>
</msub>
<mrow>
<mi>F</mi>
<mo>&CenterDot;</mo>
<msub>
<mi>N</mi>
<mi>b</mi>
</msub>
</mrow>
</mfrac>
<mo>,</mo>
</mrow>
Wherein, NSEURepresent single event upset number, F be unit area ion fluence, NbTo be illuminated the capacity of device.
6. the test method according to claim 5 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
Default rollover event number is tested every time no less than 300.
7. the test method according to claim 1 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
In step 1, the device that is illuminated is Static RAM.
8. the test method according to claim 7 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
The Static RAM characteristic size is 0.5 μm, operating current 50mA, and single-particle inversion saturation section is 5.7 × 10- 8cm2/ bit, LET threshold value are 6MeV ˙ cm2/ mg, Flouride-resistani acid phesphatase accumulated dose 100krad.
9. the test method according to claim 1 for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that：
The heavy ion total dose irradiation carried out in step 4, the heavy ion irradiation fluence that heavy ion source provides are scaled total agent of irradiation
The formula of value is as follows：
D=1.6 × 10-8× LET × Φ,
Wherein, D is the accumulated dose value of irradiation, and LET is linear energy transfer of the heavy ion in silicon, and Φ notes for heavy ion irradiation
Amount.
A kind of 10. test system for carrying out radiation effect synergistic effect using heavy ion, it is characterised in that including：
First module, is illuminated device, precognition is illuminated device radiation-resisting performance parameter, sets up the survey of single ion effect for selected
Test system, selects suitable ion species, debugs heavy ion irradiation parameter；
Second module, for testing system to being illuminated device power-up and write-in data using single ion effect, use is default
Heavy ion fluence rate carries out SEU cross section test to being illuminated device, and single event upset occurs when being illuminated device
When number exceedes default rollover event number, stop irradiation, calculate SEU cross section；
3rd module, for setting several accumulated dose values incremented by successively；
4th module, for carrying out the irradiation of each accumulated dose value, the irradiation of each accumulated dose value to device using heavy ion of the same race
After completion, SEU cross section test is carried out, wherein, in the irradiation process of each accumulated dose value, it is illuminated device
Part is in powering state, and the curent change for being illuminated device is monitored and recorded by single ion effect test system synchronization；
5th module, for when completing all irradiation of accumulated dose value and SEU cross section test, irradiation test to terminate, and paints
The change curve of SEU cross section and device operation current with each accumulated dose value is made, obtains device SEU cross section
With the changing rule of each accumulated dose value.
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| CN110426581A (en) * | 2019-08-02 | 2019-11-08 | 湘潭大学 | A kind of photoelectrical coupler radiation effect test macro and test method |
| CN110929468A (en) * | 2019-11-14 | 2020-03-27 | 北京大学 | Characterization method and application of single-particle irradiation-induced fluctuation |
| CN112213975A (en) * | 2020-09-18 | 2021-01-12 | 中国辐射防护研究院 | Microcontroller total dose irradiation failure unit experiment judgment system and method |
| CN113109859A (en) * | 2021-04-08 | 2021-07-13 | 西北核技术研究所 | Method for obtaining heavy ion single event upset cross section with low LET value |
| CN114518498A (en) * | 2021-12-28 | 2022-05-20 | 西北核技术研究所 | Method for testing total dose effect of space electronic system based on terminal point alignment irradiation |
| CN115356609A (en) * | 2022-08-11 | 2022-11-18 | 中国科学院近代物理研究所 | Method and system for improving single event upset resistance effect of active delay filter device |
| CN114518498B (en) * | 2021-12-28 | 2024-06-07 | 西北核技术研究所 | Space electronic system total dose effect test method based on end point alignment irradiation |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001215255A (en) * | 2000-02-02 | 2001-08-10 | Hitachi Ltd | Estimating method and estimating device for software error resistance of semiconductor device |
| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| CN102928773A (en) * | 2012-09-24 | 2013-02-13 | 北京圣涛平试验工程技术研究院有限责任公司 | Method for testing proton/single event effect resisting capacity of device |
| CN103616631A (en) * | 2013-11-15 | 2014-03-05 | 中国空间技术研究院 | Method for conducting device proton signal-event test through accelerator high-energy proton |
| CN106842282A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory |
| CN106847330A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of ferroelectric memory anti-single particle overturns reinforcement means |
-
2017
- 2017-11-20 CN CN201711157327.XA patent/CN108008274A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001215255A (en) * | 2000-02-02 | 2001-08-10 | Hitachi Ltd | Estimating method and estimating device for software error resistance of semiconductor device |
| CN101900770A (en) * | 2009-05-25 | 2010-12-01 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and system for assessing radiation resisting capability of device for satellite |
| CN102928773A (en) * | 2012-09-24 | 2013-02-13 | 北京圣涛平试验工程技术研究院有限责任公司 | Method for testing proton/single event effect resisting capacity of device |
| CN103616631A (en) * | 2013-11-15 | 2014-03-05 | 中国空间技术研究院 | Method for conducting device proton signal-event test through accelerator high-energy proton |
| CN106842282A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory |
| CN106847330A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of ferroelectric memory anti-single particle overturns reinforcement means |
Non-Patent Citations (2)
| Title |
|---|
| 古松: "基于重离子加速器的SOI SRAM器件单粒子翻转实验研究", 《中国博士学位论文全文数据库 基础科学辑》 * |
| 贺朝会 等: "重离子单粒子翻转截面与γ累积剂量的关系研究", 《核电子学与探测技术》 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110426581A (en) * | 2019-08-02 | 2019-11-08 | 湘潭大学 | A kind of photoelectrical coupler radiation effect test macro and test method |
| CN110426581B (en) * | 2019-08-02 | 2021-10-08 | 湘潭大学 | Photoelectric coupler radiation effect testing method |
| CN110929468A (en) * | 2019-11-14 | 2020-03-27 | 北京大学 | Characterization method and application of single-particle irradiation-induced fluctuation |
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| CN113109859A (en) * | 2021-04-08 | 2021-07-13 | 西北核技术研究所 | Method for obtaining heavy ion single event upset cross section with low LET value |
| CN113109859B (en) * | 2021-04-08 | 2024-04-30 | 西北核技术研究所 | Method for obtaining low LET value heavy ion single event upset section |
| CN114518498A (en) * | 2021-12-28 | 2022-05-20 | 西北核技术研究所 | Method for testing total dose effect of space electronic system based on terminal point alignment irradiation |
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