CN106842282A - A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory - Google Patents
A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory Download PDFInfo
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- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
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Abstract
The invention belongs to radiation detection field, it is related to a kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory, comprises the following steps：1】SRAM memory to different model carries out the relation curve of neutron irradiation demarcation, drawing data upset number and neutron fluence respectively；2】Garbled data overturns number and the linear SRAM memory model N of neutron fluence, and using the slope of matched curve as the SRAM memory model N neutron single-particle effect upset cross section；3】The SRAM memory of model N is placed in the relation curve of neutron irradiation environment to be monitored, drawing data upset number and radiated time.The characteristics of method that the present invention is used is the linear, non-threshold having using the neutron single-particle upset effect of SRAM memory, realize reactor, the supervision of neutron flux of neutron accelerator isotonic radiation environment, test result indicate that, the method can still keep measurement accuracy higher under the conditions of very low neutron fluence.
Description
Technical field
The invention belongs to radiation detection field, it is related to a kind of side that neutron irradiation environmental monitoring is carried out using SRAM memory
Method.
Background technology
Neutron irradiation environment is general to be produced by facilities such as reactor, accelerators, and the monitoring to neutron radiation environment is research
One of necessary means of nuclear device performance, by monitor neutron irradiation environment can be used for analyze nuclear facilities operation it is whether steady
It is fixed；The measurement of neutron irradiation environment simultaneously studies particularly significant, neutron for carrying out Application of Nuclear Technology using neutron irradiation environment
The degree of accuracy of radiation parameter measurement is the important prerequisite for carrying out correlative study.
Reactor current, the measurement of neutron accelerator isotonic radiation parameter generally use the methods such as activation foil measurement, this
Kind of method can just be measured after can not being measured in real time, it is necessary to accumulate the neutron of certain fluence, but under the conditions of low fluence
Measurement error is larger, and certain radioactivity is carried in the measurement process of activation foil, and tester is adversely affected.
The content of the invention
In order to solve, existing neutron irradiation measurement method of parameters measurement error under the conditions of low fluence is big and presence is radiated
Property technical problem, the present invention provides a kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory.
Technical solution of the invention is：A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory,
It is characterized in that：Comprise the following steps：
1】SRAM memory to different model carries out neutron irradiation demarcation, drawing data upset number and neutron fluence respectively
Relation curve；
2】Garbled data overturns number and the linear SRAM memory model N of neutron fluence, and by matched curve
Slope as the SRAM memory model N neutron single-particle effect upset cross section；
3】The SRAM memory of model N is placed in neutron irradiation environment to be monitored, drawing data upset number and radiation
The relation curve of time；Data flipping number is used to characterize neutron irradiation with the ratio of the neutron single-particle effect upset cross section
Accumulation fluence；Data flipping number is used to characterize the fluence stability of neutron irradiation with the linearity of the relation curve of time.
Preferably, step 1】Specifically include following steps：
1.1】Selection will carry out the SRAM memory of the Multiple Type of neutron irradiation demarcation；
1.2】Choosing a kind of SRAM memory of model carries out population parameter test, filters out the parameter difference opposite sex and is less than 5%
Sample, the performance indications parameter that will be obtained is used as normative reference；
1.3】From step 1.2】Many SRAM memories are arbitrarily selected in the sample for filtering out carries out irradiation experiment, is somebody's turn to do
The ionising radiation accumulated dose failure threshold of model SRAM memory；
1.4】In step 1.2】Many SRAM memories are arbitrarily selected in the remaining sample for filtering out carries out neutron single-particle
The relation curve of effect experiment, drawing data upset number and neutron fluence；
1.5】Repeat step 1.2-1.4】, until completing the Data flipping number and neutron of whole model SRAM memories
The drafting of the relation curve of fluence；
Preferably, step 1.3】In irradiation experiment be in cobalt source carry out gamma-ray irradiation experiment；Predose exists
Initial value is write in all logical addresses of SRAM memory, SRAM memory biasing is put and is carried out data in irradiation process and is returned
Read, the irradiation dose value when mistake occurs in back read data is ionising radiation accumulated dose failure threshold；In the initial value for being write
In, logical zero is equal with the quantity of " 1 ".
Preferably, in step 1.4】Neutron single-particle effect experiment in, all logics of the predose in SRAM memory
Initial value is write in address, data readback is put to SRAM memory biasing and carried out in irradiation process, obtain Data flipping number and
The relation of neutron fluence；In the initial value for being write, logical zero is equal with the quantity of " 1 ".
Preferably, step 1.4】In reactor association γ accumulated doses be less than step 1.3】The total agent of ionising radiation of middle determination
Amount failure threshold.
Preferably, in step 1.4】Neutron single-particle effect experiment in, the power invariability of neutron irradiation.
Preferably, step 1.4】In carry out neutron single-particle effect experiment the quantity of SRAM memory be more than or equal to
Step 1.3】In carry out irradiation experiment SRAM memory quantity.
The beneficial effects of the present invention are：
(1) present invention use method be using SRAM memory neutron single-particle upset effect have it is linear,
The characteristics of non-threshold, reactor, the supervision of neutron flux of neutron accelerator isotonic radiation environment are realized, test result indicate that, should
Method can still keep measurement accuracy higher under the conditions of very low neutron fluence.
(2) present invention carries out neutron fluence real-time monitoring from commercial SRAM device, it is to avoid sample is activated to tester
Influence, method is with low cost, easily realizes.
Brief description of the drawings
Fig. 1 is the method flow of the preferred embodiment that the present invention carries out neutron irradiation environmental monitoring using SRAM memory
Figure.
Fig. 2 is the Data flipping number of different model SRAM memory and the relation curve of neutron fluence.
Fig. 3 is the neutron single-particle effect upset cross section of different model SRAM memory.
Specific embodiment
Single particle effect is due to the ionization that single ray particle and microelectronic component sensitizing range interact and cause
Radiation injury effect, single particle effect can cause the data storage of digital circuit to overturn, and make the function of electronic system disorderly
Disorderly.With the raising of semiconductor technology integrated level, the feature process size of CMOS technology integrated circuit constantly reduces, to single-particle
Effect is also more and more sensitive.Although single particle effect is generated for the reliability of electronic system and had a strong impact on, due to list
Particle effect is a kind of stochastic effect, and its linear, effective characteristic of non-threshold can but be used to realize the radiation environment particle beams
The monitoring of stream.
Can substantially be divided into non-destructive and destructive two class by the characteristic of single particle effect.The former is referred to as soft error effects,
The latter is referred to as hard error effect.Wherein, single-particle inversion (SEU) effect belongs to soft error effects.By the phase of neutron and material
Interaction and the analysis of the mechanism of radiation damage, three steps are divided into by the generation process that the neutron single-particle of SRAM device overturns effect,
The first step is during neutron incides device, and interacts to produce ionizing energy deposition and then be converted to electric charge with device material and sink
Product；Second step be deposition electric charge collected by the electrode of device, produce transient current.3rd step is transient current to SRAM electricity
Road produces influence, produces single-particle inversion.
Generally, particle produces ionizing energy to deposit by two kinds of processes in device：Particle itself is ionized with material
The direct ionization process of effect and the secondary produced by crash response ionize the indirect ionization process of device material.Neutron
Itself is not charged, and the possibility that direct ionization process occurs is minimum.When incident neutron is straight with the lattice atoms of semi-conducting material
The parameters such as a large amount of secondarys, the share ratio of the type, energy and product of these secondarys will be produced after connecing interaction
It is related to the energy of incident neutron and the type of lattice atoms.Generally, the mass number of the secondary of generation is larger, and with one
Quantitative electric charge, therefore, it is possible to produce ionizing energy higher to deposit in the devices by way of direct ionization.Ionizing energy
Deposit and corresponding conversion relation, the ratio of conversion and the taboo of device material are there is in given device with the quantity of electric charge for producing
Bandwidth is related.An electron hole pair is for example produced, needs to consume the ionizing energy of 3.6eV in silicon materials, and in arsenic
Need to consume the ionizing energy of 4.8eV in change gallium material.Can be drawn from this conversion relation, the charge deposition that particle is produced point
Cloth is very much like with the ionizing energy deposition distribution that it is produced.For the different types of incident ion of different-energy, one is existed
The individual charge density changed along track, that is, form so-called energy deposition bragg peak.The range of low energy ion is shorter, deposition
Electric charge is more concentrated；And the range of energetic ion is larger, therefore can be in interior generation charge deposition in a big way.
There is highfield near reverse-biased PN junction, cause PN junction non-to the collection efficiency of generation electric charge in its depleted region
Chang Gao, result, it is believed that reverse biased pn junction is the single particle effect sensitizing range of semiconductor devices.When high energy charged particles are injected into device
During the depletion region of part reverse biased pn junction, the ionization of depletion region atom will be caused, produce highdensity plasma, and along particle
Track side is upwardly formed an ionization channelses.If the energy of particle is sufficiently high, then the ionization channelses of generation can enter substrate zone
Domain.This shape is as that the plasma density of the ionization ion plasma of funnel (Funnel) can be higher by compared with substrate doping is several
The order of magnitude, the depletion layer around such plasma is neutralized and disappears, and is added in the electric field tied and is advanced to substrate interior.Deng
Carrier in ion range quick separating and drifts about under funnel-form electric field action at electrode, starts charge-trapping, with
The reduction of plasma density in passage, depletion layer is gradually formed, and terminates charge-trapping.Whole charge-trapping process continues
Time is about in picosecond magnitude.This drift is collected mechanism and is referred to as funneling effect, and the effect makes the total electrical charge of moment collection much surpass
Cross the electric charge that particle is deposited in depletion region.These can form a transient current, transient state by the electric charge that electrode is collected at node
The peak value size of electric current, the position of shape and particle the incidence device of pulse width, duration and waveform, particle are produced
The parameter such as initial charge deposition distribution and PN junction reversed bias voltage is related.
The essence of SRAM memory cell is a bistable trigger-action circuit, and its storage core is the anti-phase of a pair of cross coupling
Device.In stable state, bistable circuit only has two states of stabilization.Wherein while being high level, another side is low level, generation
The numerical value of table storage is " 1 " or " 0 ".Due to the positive feedback effect of closed loop configuration, unit core can keep the data of its storage not
Can lose.When the sensitizing range of high energy particle incidence SRAM memory cell, such as the NMOS tube drain region in cut-off state, generation electricity
The funneling effect that lotus is collected, and produce the collected current of transient state in the drain electrode.When transient state collected current flows through cut-off NMOS tube, need
Will be from recovery transistor (PMOS in opening) current drawn.But recover the current driving ability and ditch of transistor
Road electrical conductivity is all limited, when from the electric current for recovering transistor absorption excess, will be produced in the drain terminal for recovering transistor
The incident voltage transient response for producing of one pressure drop, i.e. particle, is the abduction mechanism for producing single-particle inversion.The wink of this voltage
State response is similar with the pulse that sram cell is normally written, and the state for ultimately resulting in mistake is latched in sram cell.
Sram cell has 4 possible particles to inject 4 transistor drains inside sensitizing range, i.e. sram cell, these drain regions with
Trap or substrate form PN junction.Charge-trapping result of the drain junction after particle incidence is related to the location of drain junction, and its reason is
The potential barrier of trap-substrate PN junction will prevent electric charge drain terminal from trap from being spread to substrate, reduce the depth of charge-trapping.If particle
The drain region of the off state transistor on substrate is incided, the electric charge of substrate depths is expanded to Lou in the presence of funnel electric field
Area, this is the most sensitive region of device Single event upset effecf under normal circumstances.When particle incides opening crystalline substance on substrate
The drain region of body pipe, initial drift current can raise node voltage, strengthen the logic state of storage, will not cause SEU.If
Particle incides the drain region of off state NMOS tube in p-well, and initial drift current can drag down the potential of shut-off node, and circuit is opened
Originate raw upset.The hole that transient state is produced is collected by p-well, the lifting potential of p-well, makes source region to electronics is injected in trap, will
Produce the parasitic bipolar transistor effect in trap.Because being connected with VDD, its potential does not change substrate after electronics is collected into,
Thus contribution is not produced to upset.The electronics that N drain regions are collected is filled with electric current for the base of parasitic bipolar transistor, the electric current
Direction is consistent with initial drift sense of current, and exacerbates single-particle inversion.This will be small size device single-particle inversion
Important mechanisms.When particle injects the drain region that NMOS tube is turned in p-well, particle track makes two initial potential differences be the N-type region of VDD
When domain communicates, then the shunt current for producing raises the node voltage, begins turning process.With the rising of node voltage, point
The two ends electrical potential difference for flowing electric current can be faded away, and the continuation for limiting node voltage is raised.The hole that other p-well is collected can trigger
Parasitic bipolar transistor effect, the bipolar transistor current of amplification is intended to the original state of recovery nodes, the upset of prevention
Continue.For small size device, parasitic bipolar transistor effect is dominant, therefore, the particle incidence in the drain region will not produce simple grain
Son upset.Finally, the SEU sensitizing ranges in sram cell are 2, are the transistor drain of off state.
The secondary that neutron is produced with material interaction incides the transistor of CMOS technology, the electricity in particle path
A large amount of electron hole pairs are separated out, highdensity plasma is formed, funneling effect is produced in device.Its funnel area for being formed
The energy amount and type main to incoming particle of scale, the material of device and dopant concentration etc. it is related.When the class of incoming particle
When type and energy and device material do not occur larger change with doping, the scale of the electric charge funnel that particle is produced will not also occur
Larger change.Funneling effect can simultaneously exert one's influence to the instantaneous state of all circuit nodes in funnel area.For micron order
Device, the funnel area that particle ionization is formed is limited in the PN junction between transistor drain and substrate, funneling effect only shadow
Ring to the PN junction between drain electrode and substrate.If sub-micro device, because the geometry of device is smaller, incoming particle electricity
Whole unit and neighbouring trap contact are may span across from the funnel area for producing, or even neighbouring unit are also included,
So, the electric charge of hopper zone will produce influence to multiple circuit nodes in region.Thus, neutron incides small size device
In, transient current can be produced in multiple circuit nodes, so as to change final circuit response.Except the range of nodes to influenceing
Change outer, the spatial distribution of funnel area electric charge can cause the generation of the ghost effect of device, so that concept transfer is to electricity
The collection efficiency of lotus.In sum, because the change of SRAM device physical dimension brings collection of the device to deposited charge
Journey changes, and then it is general in the energy and charge deposition of SRAM device to have influence on neutron by sensitive volume and critical charge
The a series of changes such as rate, incident neutron energy threshold value, SEU sections and Multiple-bit upsets section.These changes are to cause SRAM
The principal element that device low energy neutron single particle effect changes.
As shown in figure 1, the present invention carries out the preferred embodiment step stream of neutron irradiation environmental monitoring using SRAM memory
Journey is as follows：
(1) the commercial SRAM memory of selection different characteristic process is with batch sample, and device sample is carried out entirely
Parameter testing, obtains the property indices parameter of the device as normative reference.Filter out the good sample conduct of uniformity
Irradiation object, the consistent sex differernce of sample parameter should be less than 5%.
(2) 6 devices are selected to carry out the total agent of ionising radiation in cobalt source in the device sample of every kind of feature process size
Amount experiment, predose uniform write-in 0 and 1 in the memory cell of device, device biasing is put in irradiation process, and carries out retaking of a year or grade
Operation.When mistake occurs in back read data, the dose value of irradiation is the total dose effect failure threshold of sample.
(3) selection accelerates no less than 6 devices in reactor or neutron in the device sample of every kind of feature process size
Irradiation demarcation is carried out under device isotonic radiation environment, predose uniform write-in 0 and 1 in the memory cell of device is irradiated
Device biasing is put in journey, and constantly carries out read back operation, and record data overturns the relation of number and time.Reactor in irradiation process
Or neutron accelerator power should keep constant, using the neutron fluence of the final accumulation of activation foil method metering.Simultaneous reactions heap companion
Raw γ accumulated doses should be no more than SRAM memory total dose effect threshold value.
(4) experimental result to neutron single particle effect is analyzed, due to power invariability, it is believed that integration fluence divided by
Time is constant fluence rate.The relation of different characteristic process SRAM device upset number and fluence is obtained, the linearity is good
Good type of device retains, and other type of device are rejected.For example in Fig. 2 two kinds of devices of HM6116 and HM6264 should just be rejected,
And the linearity two kinds of devices of good HM62V8100 and HM628512 should retain.
(5) calculating sifting goes out the neutron single-particle effect upset cross section (ratio of upset number and neutron fluence of SRAM device
Value), and as calibration result.It is neutron single-particle effect upset cross section and the relation of feature process size, upset cross section in Fig. 3
Larger device is more suitable for the measurement of neutron irradiation environment under the conditions of low fluence rate.
(6) the SRAM device model that will obtain neutron single-particle upset cross section is used in reactor or neutron accelerator etc.
The ratio of the monitoring of the fluence stability and accumulation fluence of sub- radiation environment, Data flipping number and upset cross section is neutron note
Amount, the quality of the linearity can characterize the stability of neutron fluence rate.
Claims (7)
1. a kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory, it is characterised in that：Comprise the following steps：
1】SRAM memory to different model carries out the pass of neutron irradiation demarcation, drawing data upset number and neutron fluence respectively
It is curve；
2】Garbled data overturns number and the linear SRAM memory model N of neutron fluence, and by the slope of matched curve
As the neutron single-particle effect upset cross section of the SRAM memory model N；
3】The SRAM memory of model N is placed in neutron irradiation environment to be monitored, drawing data upset number and radiated time
Relation curve；Data flipping number is used to characterize the accumulation of neutron irradiation with the ratio of the neutron single-particle effect upset cross section
Fluence；Data flipping number is used to characterize the fluence stability of neutron irradiation with the linearity of the relation curve of time.
2. the method that neutron irradiation environmental monitoring is carried out using SRAM memory according to claim 1, it is characterised in that：
Step 1】Specifically include following steps：
1.1】Selection will carry out the SRAM memory of the Multiple Type of neutron irradiation demarcation；
1.2】Choosing a kind of SRAM memory of model carries out population parameter test, filters out parameter difference sample of the opposite sex less than 5%,
The performance indications parameter that will be obtained is used as normative reference；
1.3】From step 1.2】Many SRAM memories are arbitrarily selected in the sample for filtering out carries out irradiation experiment, obtains the model
The ionising radiation accumulated dose failure threshold of SRAM memory；
1.4】In step 1.2】Many SRAM memories are arbitrarily selected in the remaining sample for filtering out carries out neutron single-particle effect
The relation curve of experiment, drawing data upset number and neutron fluence；
1.5】Repeat step 1.2-1.4】, until completing the Data flipping number and neutron fluence of whole model SRAM memories
Relation curve drafting.
3. the method that neutron irradiation environmental monitoring is carried out using SRAM memory according to claim 2, it is characterised in that：
Step 1.3】In irradiation experiment be in cobalt source carry out gamma-ray irradiation experiment；Predose is patrolled in all of SRAM memory
Initial value is write in volume address, SRAM memory biasing is put in irradiation process and is carried out data readback, when back read data occurs
Irradiation dose value during mistake is ionising radiation accumulated dose failure threshold；In the initial value for being write, logical zero and " 1 "
Quantity is equal.
4. the method that neutron irradiation environmental monitoring is carried out using SRAM memory according to Claims 2 or 3, its feature is existed
In：In step 1.4】Neutron single-particle effect experiment in, predose write in all logical addresses of SRAM memory just
Initial value, puts to SRAM memory biasing and carries out data readback in irradiation process, obtain the pass of Data flipping number and neutron fluence
System；In the initial value for being write, logical zero is equal with the quantity of " 1 ".
5. the method that neutron irradiation environmental monitoring is carried out using SRAM memory according to claim 4, it is characterised in that：
Step 1.4】In reactor association γ accumulated doses be less than step 1.3】The ionising radiation accumulated dose failure threshold of middle determination.
6. the method that neutron irradiation environmental monitoring is carried out using SRAM memory according to claim 5, it is characterised in that：
In step 1.4】Neutron single-particle effect experiment in, the power invariability of neutron irradiation.
7. the method that neutron irradiation environmental monitoring is carried out using SRAM memory according to claim 6, it is characterised in that：
Step 1.4】In carry out neutron single-particle effect experiment SRAM memory quantity be more than or equal to step 1.3】In carry out
The quantity of the SRAM memory of irradiation experiment.
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