CN108597557B - Test method for detecting single event disturbance of memory by taking protons as radiation sources - Google Patents
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Abstract
The invention discloses a test method for detecting single event disturbance of a memory by taking protons as radiation sources, which comprises the following steps: selecting a memory sample; performing power-on full-parameter test on the selected memory sample, and verifying the function of the memory sample; selecting a proton beam with certain energy and fluence rate on a medium-high energy proton accelerator; connecting the memory and the circuit board, and performing a power-on test again; filling data into all memories; reading data from the memory, opening a proton beam meeting the requirement when the system to be tested is stable, and irradiating the single memory; and sequentially moving the subsequent memories to beam outgoing positions, and replacing the energy of the proton beam until all energy points are measured. The invention takes the protons as the radiation source to detect the effect of resisting single-event disturbance, is more reliable and simple compared with other radiation sources, and ensures the accuracy of data extraction while improving the efficiency.
Description
Technical Field
The invention relates to the technical field of single-particle disturbance testing, in particular to a testing method for detecting single-particle disturbance of a memory by taking protons as radiation sources.
Background
In the field of aerospace, more and more memories are used in satellites, spacecraft, and airplanes. Due to its special working environment, the storage has to be exposed to various particle and ray radiations, which causes various failure phenomena. With the development of technology and the development of memories towards higher and higher integration degree, recent researches show that the influence of single particles on the memories becomes more and more obvious with the improvement of the integration degree, and the trend becomes more and more serious.
The single-particle disturbance is one of single-particle effects, and is caused by that a single charged particle is incident into a memory, energy is deposited in a track of a semiconductor material incident to the particle due to a funnel effect, and a small current is formed when the accumulated charges reach a certain degree, so that the state of the memory is disturbed. The small current occurring at different positions in the memory has different effects, such as occurring in a memory cell of an SRAM, which causes a state change of an NMOS transistor in the cell, and indicates that the stored data of the memory cell has changed. When a small current occurs in a sensitive area of a functional circuit, the function of the circuit is abnormal. However, when the charge release is completed, the memory returns to its original state, which is a soft failure. If this current is large enough, a single event latchup effect occurs, requiring power down of the memory to restore normal.
In space radiation environments, protons are widely distributed and account for a large proportion of natural radiation sources, such as 80% of cosmic rays being high-energy protons, 95% of solar winds being protons, and a large number of protons also exist in the inner band of the aurora and idelun radiation bands. Single particle effects are mainly due to high energy protons (capture environment or solar flare) and to the galaxy cosmic rays, which are generated by the passage of single particles through microelectronic devices. Therefore, the single event effect research using protons as radiation sources is significant. However, since no high-energy proton accelerator exists in China before, the research result of the domestic proton single event effect is not much.
Before this, heavy ions are mostly used for testing the single event effect, in an actual space radiation environment, the flux of the heavy ions is relatively low, and the mechanism of the proton and the heavy ion causing the single event effect is different: heavy ions are incident into the semiconductor material and collide with molecules or atoms of the semiconductor material to form an ionization track with high charge density, when the ionization track just passes through a sensitive junction (PN junction) of the semiconductor, a large amount of charges in the track are collected by the sensitive junction under the action of a depletion layer electric field, and if the collected charge amount exceeds a certain critical value, the storage state or logic state of the memory is changed, so that the single event effect is caused. The proton is different according to different action mechanisms of energy, the high-energy proton generates heavy ions through interaction with the nucleus of the semiconductor material, then the heavy ions induce a single event effect, and the low-energy proton can generate an electron hole pair in a direct ionization mode.
Therefore, an urgent need exists in the art for a testing method for detecting single event disturbance of a memory by using protons as radiation sources, which can improve efficiency and ensure data extraction accuracy.
Disclosure of Invention
In view of the above, the invention uses protons as a radiation source to detect the effect of resisting single-event disturbance, simplifies the experimental data processing steps by a unique data extraction method, and provides a test method for detecting single-event disturbance of a memory by using protons as a radiation source, which can improve the efficiency and ensure the accuracy of data extraction.
In order to achieve the purpose, the invention adopts the following technical scheme:
a test method for detecting single-event disturbance of a memory by taking protons as radiation sources comprises the following steps:
(1) selecting a memory sample;
(2) performing power-on full-parameter test on the selected memory sample, and verifying the function of the memory sample;
(3) selecting a proton beam with certain energy and fluence rate on a medium-high energy proton accelerator;
(4) connecting the memory and the circuit board in the step (2) well, and carrying out power-on test again;
(5) fill all memories with data 5555; the binary number stored in the memory is 0101, which ensures that the number of 0 and 1 in the memory is the same, thus it can be seen that the ratio of 0-1 and 1-0 is equal when the flip occurs, and since the memory is 16 bits, 4 0101, i.e., 5555, can be stored.
(6) Reading data from the memory, opening the proton beam current meeting the requirements in the step (3) when the system to be tested is stable, and irradiating the single memory;
(7) sequentially moving the subsequent memories to beam outgoing positions, and repeating the step (6);
(8) and (5) changing the energy of the proton beam, and repeating the steps (3) to (8) until all energy points are measured.
Preferably, in the above test method for detecting single-event disturbance of a memory by using protons as a radiation source, the memory is a ferroelectric memory. The ferroelectric memory realizes data retention by utilizing the spontaneous polarization principle of the PZT material, and has the characteristics of fast writing, ultrahigh reading and writing times, ultralow power consumption, strong radiation resistance and the like.
Preferably, in the test method for detecting single-particle disturbance of the memory by using protons as a radiation source, the step (2) verifies whether the function of the memory sample is normal, and the memory which cannot be subjected to normal read-write operation is removed, so that the accuracy of the memory in the experimental process is ensured.
Preferably, in the above test method for detecting single event disturbance of a memory by using protons as a radiation source, in step (3), proton beam currents with energies of 90MeV,70MeV, and 50MeV are selected.
Preferably, in the test method for detecting single event disturbance of the memory by using protons as radiation sources, the fluence rate is selected in the step (3)6.9×106/cm2S proton beam current. Because the proton beam current from the accelerator contains neutrons, too low a value can increase errors caused by the neutrons, and too high a value can add a single event effect to the value to achieve the best effect.
Preferably, in the above test method for detecting single-particle disturbance of a memory by using protons as a radiation source, in step (4), the memory is subjected to power-up test in a proton irradiation hall, whether errors can be caused by the background irradiation dose of the proton irradiation hall on a test system is observed for statistics, and if the errors have an influence on the experimental test system, a phenomenon is recorded.
For some memories with weak radiation resistance, the residual radiation existing in the radiation hall can cause the memories to generate single event effect, which is expressed as the error that the test system can detect the data inversion, but because the ferroelectric memory with strong radiation resistance is used in the invention, the experimental test system can not be influenced.
Preferably, in the above test method for detecting single-event disturbance of a memory by using protons as a radiation source, in step (6), when data is read back from the ferroelectric memory, the data is read back once a second for ten cycles.
Preferably, in the test method for detecting single event disturbance of the memory by using protons as radiation sources, in the step (6), when the cumulative fluence reaches 109/cm2At that time, the beam current is stopped.
If the cumulative fluence value is less than 109/cm2The proton irradiation time is shortened, and if the test time is too short, the acquired data volume is reduced; if the cumulative fluence value is higher than 109/cm2Not only can the metal activation be serious, but also the total dose effect of the memory can be generated besides the single event effect.
Preferably, in the test method for detecting single-event disturbance of the memory by using protons as a radiation source, a python program is used for extracting data in a file automatically generated by a test system and plotting and comparing disturbance cross sections of the ferroelectric memory.
Preferably, in the above test method for detecting single-event disturbance of a memory by using protons as a radiation source, the python program for extracting an experimental result is implemented by the following method: firstly, confirming the address 'E:/AA/' and the file name '1.txt' of a system generation file (input file) and the address 'E:/AA/' and the file name '1_ result.csv' of a generation file (output file), and generating the output file at the address; then opening an input file, searching character strings containing 'Total update number', 'Count (0- >1)', and 'Count (1- >0)' for the first line of characters, jumping to the next line for searching if the line is not found, and extracting numbers containing the back of the character strings if the line is found; then, outputting the 3 character strings to a first line of a generated file as a header, and respectively outputting the numbers to the three lines according to a line output form; and finally, executing the next row of reading operation in a circulating mode, and outputting all the data.
Compared with the prior art, the invention discloses a test method for detecting single event disturbance of a memory by using protons as radiation sources, and the test method has the following beneficial effects:
(1) the invention uses protons as radiation sources to detect the effect of resisting single-particle disturbance, and is more reliable, simpler and more convenient compared with heavy ion and laser microbeam radiation sources, because the single-particle effect which can be caused by heavy ions and laser microbeams comprises the phenomena of single-particle locking, single-particle overturning and single-particle disturbance, and the LET value of protons is lower, the single-particle effect which can be caused by the heavy ions and the laser microbeams only comprises single-particle disturbance. LET threshold of less than 8.949MeV cm for SEU if ferroelectric memory occurs2·mg-1The LET threshold for SEL generation is between 8.949MeV cm2·mg-1And 32.2 MeV. cm2·mg-1In the meantime. While the LET of protons decreases with increasing energy, the LET of the proton with the lowest energy of 50MeV used in the present invention is 9.895X 10-3MeV·cm2·mg-1The single event upset and single event locking threshold is far smaller than the threshold of the ferroelectric memory, and the influence of other single event effects on the detection result is eliminated.
(2) The invention expands the application of medium and high energy proton beam flow, has larger ratio of protons in space radiation environment, and widely establishes medium and high energy proton accelerators in China at present.
(3) The single-particle disturbance test needs to know the error number in each reading period in the irradiation process, data of 80 reading periods exist in one test result, 3 data need to be extracted in each reading period, 40 groups of test results exist in one experiment, 9600 data need to be extracted in total, and the manual extraction efficiency is very low. The data extraction method greatly simplifies the experimental data processing steps, and is different from the single-particle upset experiment, only the total number of all upsets caused in the beam irradiation time needs to be known, and each data in the process needs to be known when the single-particle disturbance is measured. The invention improves the efficiency and ensures the accuracy of data extraction.
(4) The method for extracting experimental data by utilizing the Python program can be widely applied to all tasks output by the same test system, namely the output results of single event upset, single event locking and total dose test are tested by the same test system, various tests on single event effect can use the program to extract data, and the corresponding purpose can be achieved by changing corresponding Python statements facing different test systems.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram illustrating the principle of proton induced single event effect according to the present invention;
FIG. 2 is a diagram illustrating the single-event disturbance of 90MeV protons in a ferroelectric memory according to the present invention;
FIG. 3 is a diagram illustrating the single-event disturbance of the ferroelectric memory caused by protons at different energies according to the present invention;
FIG. 4 is a schematic diagram of the operation of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a test method for detecting single event disturbance of a memory by taking protons as radiation sources.
Referring to the accompanying fig. 1, the present invention provides a test method for detecting single event disturbance of a memory by using protons as radiation sources, which comprises the following steps:
a test method for detecting single-event disturbance of a memory by taking protons as radiation sources comprises the following steps:
(1) selecting a memory sample;
(2) performing power-on full-parameter test on the selected memory sample, and verifying the function of the memory sample;
(3) selecting a proton beam with certain energy and fluence rate on a medium-high energy proton accelerator;
(4) connecting the memory and the circuit board in the step (2) well, and carrying out power-on test again;
(5) fill all memories with data 5555;
(6) reading data from the memory, opening the proton beam current meeting the requirements in the step (3) when the system to be tested is stable, and irradiating the single memory;
(7) sequentially moving the subsequent memories to beam outgoing positions, and repeating the step (6);
(8) and (5) changing the energy of the proton beam, and repeating the steps (3) to (8) until all energy points are measured.
In order to further optimize the technical scheme, the memory is a ferroelectric memory.
In order to further optimize the technical scheme, whether the functions of the memory samples are normal is verified in the step (2), and memories which cannot be subjected to normal read-write operation are removed.
In order to further optimize the technical scheme, proton beam currents with the energy of 90MeV,70MeV and 50MeV are selected in the step (3).
In order to further optimize the above technical scheme, the fluence rate is selected to be 6.9 × 10 in the step (3)6/cm2S proton beam current.
In order to further optimize the technical scheme, in the step (4), the memory is subjected to power-up test in the proton irradiation hall, whether the background irradiation dose of the proton irradiation hall influences the experimental result or not is observed, and if yes, the phenomenon is recorded.
In order to further optimize the technical scheme, in the step (6), when data is read back from the ferroelectric memory, the data is read back once a second for ten cycles.
In order to further optimize the technical scheme, in the step (6), when the accumulated fluence reaches 1 multiplied by 109/cm2At that time, the beam current is stopped.
In order to further optimize the technical scheme, a python program is used for extracting data in a file automatically generated by a test system and plotting and comparing disturbance sections of the ferroelectric memory.
The testing principle of the present invention is explained below with reference to fig. 1:
the protons enter the semiconductor material and react with atoms or molecules of the semiconductor material, and the reaction mechanism and the reaction product are different according to the difference of the incident energy.
As shown in fig. 1, low energy protons (below 3 MeV) can deposit energy by direct ionization, similar to heavy ions. The low-energy protons collide with atoms or molecules in the material to form an ionization track with high charge density, when the ionization track just crosses a sensitive junction (PN junction) of a semiconductor, a large amount of charges in the track are collected by the sensitive junction under the action of a depletion layer electric field, and if the collected charge amount exceeds a certain critical value, the storage state or the logic state of the memory is changed, so that the single event effect is caused. Because the plasma density in the ionization track is very high, the plasma density interacts with the depletion layer electric field inherent in the PN junction, so that the structure of the depletion layer electric field is distorted, the electric field is longitudinally expanded to a certain depth along the ionization track, and an electric field expansion area similar to a funnel is formed, namely the funnel effect. In the intrinsic depletion layer and the funnel region, the charges in the tracks are subjected to drift motion under the action of an electric field and are collected by two poles of a PN junction, and although the electric field is absent below the funnel region, the charges in the tracks also enter the funnel region due to the diffusion motion of the charges and are collected by the PN junction.
The energetic protons, by elasticity with atoms or molecules, produce secondary particles, including neutrons n, protons p, heavy ions z. The neutrons n and a part of the protons p will be elastic with the material atoms or molecules, and another part of the protons p will be directly ionized together with the heavy ions z. The protons with different energies generate different types and energies of secondary particles, different from the reaction channels generated by atoms or molecules of the material, and the higher the energy is, the more the reaction channels are, the more the types of the generated secondary particles are, and the more the content of the secondary particles with relatively small atomic numbers is.
The storage array of the ferroelectric memory has stronger irradiation resistance than a peripheral circuit when being irradiated by particles, and in the proton irradiation process, the reading error number is ended along with the beam stop of the proton beam, which indicates that data inversion does not occur in the storage array, and all disturbance is caused by energy deposition generated by nuclear reaction of medium-high energy protons in the peripheral circuit.
The investigation finds that the disturbance current generated by the memory in the irradiation process greatly disturbs the sense amplifier, so that the disturbance caused by protons to the sense amplifier in the peripheral circuit of the ferroelectric memory can be explained.
Example 1
Referring to the accompanying drawings 2, 3 and 4, the invention discloses a test method for detecting single event disturbance of a memory by taking protons as radiation sources, which specifically refines the operation flow as follows:
selecting a plurality of ferroelectric memory samples, carrying out power-on full-parameter test on the memories, detecting whether the memories can realize normal writing and reading operations, and rejecting the memories which can not carry out normal reading and writing operations.
The selected energies on the medium-high energy proton accelerator are respectively 90MeV,70MeV and 50MeV, and the fluence rate is 6.9 multiplied by 106/cm2S proton beam current. In order to consider the influence of background radiation in a proton accelerator laboratory on the experiment, a circuit connecting a memory and a circuit board is placed in a proton irradiation hall, and the memory is subjected to power-on test again. And observing whether the reading and writing of the memory are normal or not, and recording the phenomenon if the abnormal condition exists. Next, all ferroelectric memories are filled with data 5555. Reading data from the ferroelectric memory once in one second, automatically comparing the read data with the written data by the test system to determine if they are consistent, opening proton beam when the test system is stable and reading ten cycles, irradiating the single memory to obtain an accumulated fluence of 1 × 109/cm2At that time, the beam current is stopped. And then moving the next memory to a beam outgoing position, carrying out read-back operation on the memory again, and opening the proton beam for irradiation when the memory is stably read back for ten periods without errors. And after the experimental test of one energy point is finished, replacing the energy of the proton beam, and repeating the steps until all the energy points are tested.
The test system can automatically generate a process file, record error data in each read-back period, extract the data in the process file into an Excel file by using a homemade python program, and map and calculate the disturbance section of the ferroelectric memory.
The python program used to extract the experimental results is as follows:
the above procedure aims to extract all data including "Total update number", "Count (0- > 1)" and "Count (1- > 0)" in the ferroelectric memory test system output file "1. txt" into an excel table file "1 _ result.csv", and the syntax of the procedure is applicable to python version 2.7.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (6)
1. A test method for detecting single-event disturbance of a memory by taking protons as radiation sources comprises the following steps:
(1) selecting a memory sample;
(2) performing power-on full-parameter test on the selected memory sample, and verifying the function of the memory sample;
(3) the selected energies on the medium-high energy proton accelerator are respectively 90MeV,70MeV and 50MeV, and the fluence rate is 6.9 multiplied by 106/cm2S proton beam current;
(4) connecting the memory and the circuit board in the step (2) well, and carrying out power-on test again;
(5) fill all memories with data 5555;
(6) reading back data from the memory, and opening the system to be tested when the system to be tested is stable to meet the requirement in the step (3)The required proton beam irradiates a single memory, and when the accumulated fluence reaches 109/cm2Stopping the beam current;
(7) sequentially moving the subsequent memories to beam outgoing positions, and repeating the step (6);
(8) and (5) changing the energy of the proton beam, and repeating the steps (3) to (8) until all energy points are measured.
2. The method as claimed in claim 1, wherein the memory is a ferroelectric memory.
3. The method for detecting single-particle disturbance of the memory by using protons as a radiation source according to claim 1, characterized in that in the step (2), whether the memory sample functions normally is verified, and the memory in which normal read-write operation cannot be performed is removed.
4. The test method for detecting single-particle disturbance of the memory by taking protons as a radiation source according to claim 1, characterized in that in the step (4), the memory is subjected to power-up test in the proton irradiation hall, whether the background irradiation dose of the proton irradiation hall influences the experimental result or not is observed, and if so, the phenomenon is recorded.
5. The method for detecting single-event disturbance of a memory by using protons as a radiation source according to claim 1, wherein in the step (6), when data is read back from the ferroelectric memory, the data is read back once a second for ten cycles.
6. The test method for detecting single-event disturbance of the memory by taking protons as a radiation source as claimed in claim 1, characterized in that a python program is used for extracting data in a test system automatic generation file and drawing and comparing disturbance cross sections of the ferroelectric memory.
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| CN103616631A (en) * | 2013-11-15 | 2014-03-05 | 中国空间技术研究院 | Method for conducting device proton signal-event test through accelerator high-energy proton |
| CN106847330A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of ferroelectric memory anti-single particle overturns reinforcement means |
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| CN103616631A (en) * | 2013-11-15 | 2014-03-05 | 中国空间技术研究院 | Method for conducting device proton signal-event test through accelerator high-energy proton |
| CN106847330A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of ferroelectric memory anti-single particle overturns reinforcement means |
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