CN106842282B - A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory - Google Patents
A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory Download PDFInfo
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- CN106842282B CN106842282B CN201611246228.4A CN201611246228A CN106842282B CN 106842282 B CN106842282 B CN 106842282B CN 201611246228 A CN201611246228 A CN 201611246228A CN 106842282 B CN106842282 B CN 106842282B
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- G01T3/08—Measuring neutron radiation with semiconductor detectors
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- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
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Abstract
The invention belongs to radiation detection fields, are related to a kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory, include the following steps：1】Carry out the relation curve of neutron irradiation calibration, drawing data overturning number and neutron fluence respectively to the SRAM memory of different model；2】Garbled data overturns number and neutron fluence SRAM memory model N in a linear relationship, and using the slope of matched curve as the neutron single-particle effect upset cross section of the SRAM memory model N；3】The SRAM memory of model N is placed in the relation curve of neutron irradiation environment to be monitored, drawing data overturning number and radiated time.The characteristics of method that the present invention uses is using linear possessed by the neutron single-particle overturning effect of SRAM memory, non-threshold, the supervision of neutron flux of realization reactor, neutron accelerator isotonic radiation environment, the experimental results showed that this method can still keep higher measurement accuracy under the conditions of very low neutron fluence.
Description
Technical field
The invention belongs to radiation detection fields, are related to a kind of side that neutron irradiation environmental monitoring is carried out using SRAM memory
Method.
Background technology
Neutron irradiation environment is generally generated by facilities such as reactor, accelerators, and the monitoring to neutron radiation environment is research
One of necessary means of nuclear device performance, by monitor neutron irradiation environment can be used for analyze nuclear facilities operation it is whether steady
It is fixed；The measurement of neutron irradiation environment simultaneously studies particularly significant, neutron for carrying out Application of Nuclear Technology using neutron irradiation environment
The accuracy that radiation parameter measures is to carry out the important prerequisite of correlative study.
Reactor current, neutron accelerator isotonic radiation parameter measurement generally use activation foil measure the methods of, this
Kind of method cannot be measured in real time, can just be measured, but under the conditions of low fluence after the neutron for needing to accumulate certain fluence
Measurement error is larger, and tester is adversely affected with certain radioactivity in the measurement process of activation foil.
Invention content
In order to solve, existing neutron irradiation measurement method of parameters measurement error under the conditions of low fluence is big and presence is radiated
Property the technical issues of, the present invention provide it is a kind of using SRAM memory carry out neutron irradiation environmental monitoring method.
The present invention technical solution be：A kind of method that neutron irradiation environmental monitoring is carried out using SRAM memory,
It is characterized in that：Include the following steps：
1】Carry out neutron irradiation calibration, drawing data overturning number and neutron fluence respectively to the SRAM memory of different model
Relation curve；
2】Garbled data overturns number and neutron fluence SRAM memory model N in a linear relationship, and by matched curve
Neutron single-particle effect upset cross section of the slope as the SRAM memory model N；
3】The SRAM memory of model N is placed in neutron irradiation environment to be monitored, drawing data overturning number and radiation
The relation curve of time；The ratio of Data flipping number and the neutron single-particle effect upset cross section is used to characterize neutron irradiation
Accumulate fluence；The linearity of Data flipping number and the relation curve of time is used to characterize the fluence stability of neutron irradiation.
Preferably, step 1】Specifically include following steps：
1.1】Various types of SRAM memories of neutron irradiation calibration will be carried out by choosing；
1.2】The SRAM memory for choosing a kind of model carries out population parameter test, filters out the parameter difference opposite sex and is less than 5%
Sample, using obtained performance indicator parameter as with reference to standard；
1.3】From step 1.2】More SRAM memories is arbitrarily selected to carry out irradiation experiment in the sample filtered out, are somebody's turn to do
The ionising radiation accumulated dose failure threshold of model SRAM memory；
1.4】In step 1.2】More SRAM memories is arbitrarily selected to carry out neutron single-particle in the remaining sample filtered out
The relation curve of effect experiment, drawing data overturning number and neutron fluence；
1.5】Repeat step 1.2-1.4】, until completing the Data flipping number and neutron of whole model SRAM memories
The drafting of the relation curve of fluence；
Preferably, step 1.3】In irradiation experiment be carry out in cobalt source gamma-ray irradiation experiment；Predose exists
Initial value is written in all logical addresses of SRAM memory, SRAM memory biasing is put in irradiation process and carries out data and is returned
It reads, when the irradiation dose value of back read data when the error occurs is ionising radiation accumulated dose failure threshold；In the initial value being written
In, logical zero is equal with the quantity of " 1 ".
Preferably, in step 1.4】Neutron single-particle effect experiment in, predose is in all logics of SRAM memory
Initial value is written in address, SRAM memory biasing is put in irradiation process and carries out data readback, obtain Data flipping number and
The relationship of neutron fluence；In the initial value being written, logical zero is equal with the quantity of " 1 ".
Preferably, step 1.4】In reactor association γ accumulated doses be less than step 1.3】In determine the total agent of ionising radiation
Measure failure threshold.
Preferably, in step 1.4】Neutron single-particle effect experiment in, the power invariability of neutron irradiation.
Preferably, step 1.4】The quantity of the middle SRAM memory for carrying out neutron single-particle effect experiment is more than or equal to
Step 1.3】The quantity of the middle SRAM memory for carrying out irradiation experiment.
The beneficial effects of the present invention are：
(1) method that uses of the present invention be using it is linear possessed by the neutron single-particle overturning effect of SRAM memory,
The characteristics of non-threshold, realize reactor, neutron accelerator isotonic radiation environment supervision of neutron flux, the experimental results showed that, should
Method can still keep higher measurement accuracy under the conditions of very low neutron fluence.
(2) present invention selects commercial SRAM device to carry out neutron fluence and monitors in real time, avoids sample activation to tester
Influence, method is of low cost, easy to implement.
Description of the drawings
Fig. 1 is the method flow for the preferred embodiment that the present invention carries out neutron irradiation environmental monitoring using SRAM memory
Figure.
Fig. 2 is the Data flipping number of different model SRAM memory and the relation curve of neutron fluence.
Fig. 3 is the neutron single-particle effect upset cross section of different model SRAM memory.
Specific embodiment
Single particle effect is ionized caused by single ray particle and the interaction of microelectronic component sensitizing range
Radiation injury effect, single particle effect can cause the storage data of digital circuit to overturn, and the function of making electronic system is disorderly
Disorderly.With the raising of semiconductor technology integrated level, the feature process size of CMOS technology integrated circuit constantly reduces, to single-particle
Effect is also more and more sensitive.Although single particle effect produces the reliability of electronic system and seriously affects, due to list
Particle effect is a kind of stochastic effect, and linear, non-threshold effective characteristic can but be used to realize the radiation environment particle beams
The monitoring of stream.
It can substantially be divided into non-destructive and destructive two classes by the characteristic of single particle effect.The former is known as soft error effects,
The latter is known as hard error effect.Wherein, single-particle inversion (SEU) effect belongs to soft error effects.Pass through the phase of neutron and material
The generation process of the neutron single-particle overturning effect of SRAM device is divided into three steps by interaction and the analysis of the mechanism of radiation damage,
The first step is that neutron is incident in device, and interacts to generate ionizing energy and deposit and then be converted to charge with device material and sink
Product；Second step be deposition charge collected by the electrode of device, generate transient current.Third step is transient current to SRAM electricity
Road has an impact, and generates single-particle inversion.
It is deposited in general, particle generates ionizing energy by two kinds of processes in device：Particle itself is ionized with material
The direct ionization process of effect and the indirect ionization process that device material is ionized by the secondary that crash response generates.Neutron
Itself is not charged, and the possibility that direct ionization process occurs is minimum.It is straight when the lattice atoms of incident neutron and semi-conducting material
A large amount of secondarys will be generated after connecing interaction, the parameters such as share ratio of the types of these secondarys, energy and product
It is related to the energy of incident neutron and the type of lattice atoms.In general, the mass number of the secondary generated is larger, and with one
Quantitative charge, therefore higher ionizing energy deposition can be generated in the devices by way of direct ionization.Ionizing energy
There is corresponding conversion relation, the ratio of conversion and the taboos of device material in given device with the quantity of electric charge generated for deposition
Bandwidth is related.Such as an electron hole pair is generated, it needs to consume the ionizing energy of 3.6eV in silicon materials, and in arsenic
Change the ionizing energy for needing to consume 4.8eV in gallium material.It can be obtained from this conversion relation, the charge deposition that particle generates point
Cloth and the ionizing energy deposition distribution that it is generated are very much like.For the different types of incident ion of different-energy, there is one
A charge density changed along track forms so-called energy deposition bragg peak.The range of low energy ion is shorter, deposition
Charge is more concentrated；And the range of energetic ion is larger, therefore charge deposition can be generated in wide range.
There are highfields near reverse-biased PN junction, cause PN junction non-to the collection efficiency for generating charge in its depleted region
Chang Gao, result, it is believed that reverse biased pn junction is the single particle effect sensitizing range of semiconductor devices.When high energy charged particles are injected into device
During the depletion region of part reverse biased pn junction, the ionization of depletion region atom will be caused, generate highdensity plasma, and along particle
Track side is upwardly formed an ionization channels.If the energy of particle is sufficiently high, then the ionization channels of generation can enter substrate zone
Domain.This shape is as that the plasma density of the ionization ion plasma of funnel (Funnel) can be higher by compared with substrate doping is several
The order of magnitude, the depletion layer around such plasma are neutralized and disappear, be added in the electric field tied and be advanced to substrate interior.Deng
Carrier quick separating and drift at electrode under funnel-form electric field action in ion range, starts charge-trapping, with
The reduction of plasma density, depletion layer gradually form in channel, and terminate charge-trapping.Entire charge-trapping process continues
Time is about in picosecond magnitude.This drift collects mechanism and is known as funneling effect, which makes the total electrical charge of moment collection much super
Cross the charge that particle is deposited in depletion region.These can form a transient current, transient state by the charge that electrode is collected at node
The peak value size of electric current, the shape of pulse width, duration and waveform are generated with the position of particle incidence device, particle
The parameters such as initial charge deposition distribution and PN junction reversed bias voltage are related.
The essence of SRAM memory cell is a bistable trigger-action circuit, and storage core is the reverse phase of a pair of cross coupling
Device.In stable state, only there are two the states stablized for bistable circuit.Wherein on one side for high level, another side is low level, generation
The numerical value of table storage is " 1 " or " 0 ".Due to the positive feedback effect of closed loop configuration, unit core can keep the data of its storage not
It can lose.When the sensitizing range of high energy particle incidence SRAM memory cell, the NMOS tube drain region of cut-off state is such as in, electricity occurs
The funneling effect that lotus is collected, and generate the collected current of transient state in the drain electrode.When transient state collected current flows through cut-off NMOS tube, need
It will be from recovery transistor (PMOS tube for being in opening) current drawn.However restore the current driving ability and ditch of transistor
Road conductivity is all limited, when from the electric current for restoring transistor absorption excess, will be generated in the drain terminal for restoring transistor
The voltage transient response that one pressure drop, i.e. particle incidence generate, is the abduction mechanism for generating single-particle inversion.The wink of this voltage
State response is similar with the pulsion phase that sram cell is normally written, and the state for eventually leading to mistake is latched in sram cell.
Sram cell has 4 possible particles to inject sensitizing ranges, i.e. 4 inside sram cell transistor drain, these drain regions with
Trap or substrate form PN junction.Charge-trapping result of the drain junction after particle incidence is related to the location of drain junction, the reason is that
The potential barrier of trap-substrate PN junction will prevent charge drain terminal out of trap from being spread to substrate, reduce the depth of charge-trapping.If particle
The drain region of the off state transistor on substrate is incident on, the charge of substrate depths expands to leakage under the action of funnel electric field
Area, this is the most sensitive region of device Single event upset effecf under normal conditions.When particle is incident on opening crystalline substance on substrate
The drain region of body pipe, initial drift current can increase node voltage, strengthen the logic state of storage, will not cause SEU.If
Particle is incident on the drain region of off state NMOS tube in p-well, and initial drift current can drag down the potential of shutdown node, and circuit is opened
Originate raw overturning.The hole that transient state generates is collected by p-well, has been lifted the potential of p-well, source region is made to inject electronics into trap, will
Generate the parasitic bipolar transistor effect in trap.Substrate with VDD because being connected, its potential does not change after electronics is collected into,
Thus contribution is not generated to overturning.The electronics that N drain regions are collected is filled with electric current for the base area of parasitic bipolar transistor, the electric current
Direction is consistent with initial drift sense of current, and exacerbates single-particle inversion.This will be small size device single-particle inversion
Important mechanisms.When particle injects the drain region of conducting NMOS tube in p-well, particle track makes the N-type region that two initial potential differences are VDD
When domain communicates, then the shunt current generated increases the node voltage, begins turning process.With the raising of node voltage, divide
The both ends potential difference of galvanic electricity stream can fade away, and limit node voltage and continue to increase.In addition the hole that p-well is collected can cause
Parasitic bipolar transistor effect, the bipolar transistor current of amplification are intended to the original state of recovery nodes, the overturning of prevention
Continue.For small size device, parasitic bipolar transistor effect is dominant, and therefore, the particle incidence in the drain region will not generate simple grain
Son overturning.Finally, the SEU sensitizing ranges in sram cell are 2, are the transistor drain of off state.
The secondary that neutron is generated with material interaction is incident on the transistor of CMOS technology, is powered in particle path
A large amount of electron hole pairs are separated out, highdensity plasma is formed, funneling effect is generated in device.Its funnel area formed
Scale it is mainly related to the energy amount and type of incoming particle, the material of device and dopant concentration etc..When the class of incoming particle
When larger change does not occur for type and energy and device material and doping, the scale for the charge funnel that particle generates will not occur
Larger change.Funneling effect can exert one's influence to the instantaneous state of circuit nodes all in funnel area simultaneously.For micron order
Device, the funnel area that particle ionization is formed are limited in the PN junction between transistor drain and substrate, funneling effect only shadow
It rings to the PN junction between drain electrode and substrate.If sub-micro device, since the geometry of device is smaller, incoming particle electricity
Funnel area from generation may span across entire unit and the contact of neighbouring trap or even be also included neighbouring unit,
So, the charge of hopper zone will have an impact circuit nodes multiple in region.Neutron is incident on small size device as a result,
In, transient current can be generated in multiple circuit nodes, so as to change final circuit response.In addition to the range of nodes to influence
It changes outer, the spatial distribution of funnel area charge can lead to the generation of the ghost effect of device, so as to which concept transfer is to electricity
The collection efficiency of lotus.In conclusion the variation due to SRAM device geometric dimension brings collection of the device to deposited charge
Journey changes, and then it is general in the energy and charge deposition of SRAM device by sensitive volume with critical charge to influence neutron
The a series of variations such as rate, incident neutron energy threshold value, SEU sections and Multiple-bit upsets section.These changes are to lead to SRAM
The principal element that device low energy neutron single particle effect changes.
As shown in Figure 1, the present invention carries out the preferred embodiment step stream of neutron irradiation environmental monitoring using SRAM memory
Journey is as follows：
(1) the commercial SRAM memory of selection different characteristic process is with batch sample, and device sample is carried out complete
Parameter testing, the property indices parameter for obtaining the device are used as with reference to standard.Filter out the good sample conduct of consistency
Object is irradiated, the consistent sex differernce of sample parameter should be less than 5%.
(2) 6 devices is selected to carry out the total agent of ionising radiation in cobalt source in the device sample of each feature process size
0 and 1 is uniformly written in amount experiment, predose in the storage unit of device, and device biasing is put in irradiation process, and carries out retaking of a year or grade
Operation.When back read data when the error occurs, the dose value of irradiation is the total dose effect failure threshold of sample.
(3) selection is no less than 6 devices in reactor or neutron acceleration in the device sample of each feature process size
Irradiation calibration is carried out under device isotonic radiation environment, 0 and 1 is uniformly written in predose in the storage unit of device, irradiated
Device biasing is put in journey, and constantly carries out read back operation, records Data flipping number and the relationship of time.Reactor in irradiation process
Or neutron accelerator power should be kept constant, the neutron fluence finally accumulated using the metering of activation foil method.Simultaneous reactions heap companion
Raw γ accumulated doses should be no more than SRAM memory total dose effect threshold value.
(4) experimental result of neutron single particle effect is analyzed, due to power invariability, it is believed that integration fluence divided by
Time is constant fluence rate.The relationship of different characteristic process SRAM device overturning number and fluence is obtained, the linearity is good
Good type of device retains, and other type of device are rejected.Such as two kinds of devices of HM6116 and HM6264 should just reject in Fig. 2,
And the linearity two kinds of devices of good HM62V8100 and HM628512 should retain.
(5) calculating sifting goes out the neutron single-particle effect upset cross section (ratio of overturning number and neutron fluence of SRAM device
Value), and as calibration result.It is neutron single-particle effect upset cross section and the relationship of feature process size, upset cross section in Fig. 3
Larger device is more suitable for the measurement of neutron irradiation environment under the conditions of low fluence rate.
(6) by the SRAM device model for having obtained neutron single-particle upset cross section in reactor or neutron accelerator etc.
The ratio of the fluence stability of sub- radiation environment and the monitoring for accumulating fluence, Data flipping number and upset cross section is neutron note
Amount, the quality of the linearity can characterize the stability of neutron fluence rate.
Claims (6)
- A kind of 1. method that neutron irradiation environmental monitoring is carried out using SRAM memory, it is characterised in that：Include the following steps：1】Carry out the pass of neutron irradiation calibration, drawing data overturning number and neutron fluence respectively to the SRAM memory of different model It is curve；2】Garbled data overturns number and neutron fluence SRAM memory model N in a linear relationship, and by the slope of matched curve Neutron single-particle effect upset cross section as the SRAM memory model N；3】The SRAM memory of model N is placed in neutron irradiation environment to be monitored, drawing data overturning number and radiated time Relation curve；The ratio of Data flipping number and the neutron single-particle effect upset cross section is used to characterize the accumulation of neutron irradiation Fluence；The linearity of Data flipping number and the relation curve of time is used to characterize the fluence stability of neutron irradiation；Step 1】Specifically include following steps：1.1】Various types of SRAM memories of neutron irradiation calibration will be carried out by choosing；1.2】The SRAM memory for choosing a kind of model carries out population parameter test, filters out the sample that the parameter difference opposite sex is less than 5%, Using obtained performance indicator parameter as with reference to standard；1.3】From step 1.2】More SRAM memories is arbitrarily selected to carry out irradiation experiment in the sample filtered out, obtain the model The ionising radiation accumulated dose failure threshold of SRAM memory；1.4】In step 1.2】More SRAM memories is arbitrarily selected to carry out neutron single-particle effect in the remaining sample filtered out The relation curve of experiment, drawing data overturning number and neutron fluence；1.5】Repeat step 1.2-1.4】, until completing the Data flipping number and neutron fluence of whole model SRAM memories Relation curve drafting.
- 2. the method according to claim 1 that neutron irradiation environmental monitoring is carried out using SRAM memory, it is characterised in that： Step 1.3】In irradiation experiment be carry out in cobalt source gamma-ray irradiation experiment；Predose is patrolled in all of SRAM memory It collects in address and initial value is written, SRAM memory biasing is put in irradiation process and carries out data readback, when back read data occurs Irradiation dose value during mistake is ionising radiation accumulated dose failure threshold；In the initial value being written, logical zero and " 1 " Quantity is equal.
- 3. the method according to claim 1 or 2 that neutron irradiation environmental monitoring is carried out using SRAM memory, feature are existed In：In step 1.4】Neutron single-particle effect experiment in, predose be written in all logical addresses of SRAM memory just Initial value puts SRAM memory biasing in irradiation process and carries out data readback, obtains the pass of Data flipping number and neutron fluence System；In the initial value being written, logical zero is equal with the quantity of " 1 ".
- 4. the method according to claim 3 that neutron irradiation environmental monitoring is carried out using SRAM memory, it is characterised in that： Step 1.4】In reactor association γ accumulated doses be less than step 1.3】In determine ionising radiation accumulated dose failure threshold.
- 5. the method according to claim 4 that neutron irradiation environmental monitoring is carried out using SRAM memory, it is characterised in that： In step 1.4】Neutron single-particle effect experiment in, the power invariability of neutron irradiation.
- 6. the method according to claim 5 that neutron irradiation environmental monitoring is carried out using SRAM memory, it is characterised in that： Step 1.4】The quantity of the middle SRAM memory for carrying out neutron single-particle effect experiment is more than or equal to step 1.3】Middle progress The quantity of the SRAM memory of irradiation experiment.
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| CN109119110B (en) * | 2017-06-26 | 2021-02-23 | 中国科学院微电子研究所 | Method for reinforcing total dose effect resistance of flash memory circuit |
| CN107393585B (en) * | 2017-06-28 | 2018-05-18 | 西北核技术研究所 | The neutron single-particle overturning discriminating method of SRAM under the conditions of Pulse neutron irradiation |
| CN108008274A (en) * | 2017-11-20 | 2018-05-08 | 西安空间无线电技术研究所 | A kind of test method and system for carrying out radiation effect synergistic effect using heavy ion |
| CN108072888B (en) * | 2017-12-15 | 2019-10-29 | 北京卫星环境工程研究所 | Medium-Earth Orbit space environment and the integrated detection device of effect |
| CN109214049B (en) * | 2018-07-27 | 2023-06-30 | 北京圣涛平试验工程技术研究院有限责任公司 | Method and device for acquiring neutron single event effect section of device |
| CN109917263B (en) * | 2019-03-28 | 2021-12-24 | 西北核技术研究所 | Unattended semiconductor device single event effect measuring method |
| CN110007335B (en) * | 2019-04-16 | 2020-09-25 | 东莞中子科学中心 | Inversion algorithm for measuring neutron energy spectrum |
| CN110018514B (en) * | 2019-04-16 | 2020-10-20 | 东莞中子科学中心 | Neutron energy spectrum detector based on SRAM and inversion algorithm for measuring neutron energy spectrum |
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| CN103198868A (en) * | 2013-04-16 | 2013-07-10 | 西北核技术研究所 | Fault simulation system and fault analysis method for single event upset |
| CN103165192B (en) * | 2013-04-16 | 2014-09-24 | 西北核技术研究所 | SRAM (Static Random Access Memory) single event latch-up effect testing system and method |
| CN105590653A (en) * | 2014-10-22 | 2016-05-18 | 北京圣涛平试验工程技术研究院有限责任公司 | Neutron single event effect testing method of a SRAM type FPGA |
| CN105609139B (en) * | 2014-11-21 | 2018-10-23 | 北京圣涛平试验工程技术研究院有限责任公司 | SRAM type FPGA neutron single-particle effect test control methods and device |
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