CN108962307A - A kind of ferroelectric memory anti-single particle overturning reinforcement means and system - Google Patents
A kind of ferroelectric memory anti-single particle overturning reinforcement means and system Download PDFInfo
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Abstract
The present invention discloses a kind of ferroelectric memory anti-single particle overturning reinforcement means and system.Functional verification and population parameter test are carried out to multiple ferroelectric memorys to be reinforced, obtain functional verification result and population parameter test result；Pile neutron irradiation is carried out to the ferroelectric memory to be reinforced, obtains pre-irradiation ferroelectric memory；Artificial radioactivity monitoring is carried out to the pre-irradiation ferroelectric memory, obtains and reinforces ferroelectric memory；Functional verification and population parameter test are carried out to the reinforcing ferroelectric memory, the functional verification result, the population parameter test result are compared with the reinforcing ferroelectric memory functional verification result, reinforcing ferroelectric memory population parameter test result；The normal reinforcing ferroelectric memory is subjected to single-particle inversion test.It realizes in the Top-layer Design Method and manufacturing condition for not changing ferroelectric memory, the ferroelectric memory by reinforcing can be directly used for replacing unguyed ferroelectric memory, save development cost.
Description
Technical field
The present invention relates to semiconductor devices field of radioresistance reinforcement, turn over more particularly to a kind of ferroelectric memory anti-single particle
Turn reinforcement means and system.
Background technique
In space mission, semiconductor memory plays an important role in terms of acquisition of information and preservation.With space flight skill
The development of art, demand of the relevant industries to high-performance memory increasingly increase.Ferroelectric memory is a kind of novel non-volatile deposits
Reservoir has high read-write durability, high speed programming, super low-power consumption and is easy to be embedded in a variety of compared with traditional storage scheme
Advantage.
The aerospace electron device being exposed in space environment will also face the threat of a variety of radiation effects, wherein single-particle
Effect is to lead to one of main radiation effect of storage failure, it is therefore necessary to carry out alternative devices single particle effect research with
Take necessary reinforcement measure.Single-particle inversion (Single Event Upset) is that space environment is main caused by electronic device
One of radiation effect is wanted, when it refers to single high energy particle incidence device sensitizing range, in incident track week due to strong ionization
It encloses and generates highdensity electron hole pair, these charges are collected rapidly, when the charge of collection is more than that device maintains original state
When required critical charge, the logic state of device will be flipped.With the continuous reduction of electronic component characteristic size
With the reduction of critical charge, the influence of single-particle inversion becomes more and more significant.
Ferroelectric memory is integrated with traditional cmos process and ferroelectric thin film technique.Studies have shown that ferroelectric thin film has preferably
Capability of resistance to radiation, anti-neutron irradiation ability be greater than 1015n/cm2, resistant to total dose ability reaches 10Mrad (Si), is much better than same
SiO Deng under the conditions of2, it is highly suitable for using in space environment.However, the peripheral circuit of ferroelectric memory, as control logic,
Using traditional CMOS technology, single particle effect sensibility, which is much higher than, is based on ferroelectricity for decoding circuit, sense amplifier etc.
The storage array of technique.Meanwhile by peripheral circuit cause mistake show multiaddress continuous overturning, caused by consequence it is very tight
Weight.
Studies have shown that the overturning of ferroelectric memory peripheral circuit and part locking and its propagate have direct relation, by
Power port electric current is monitored in experiment, finds to capture when energy is the pulse laser incidence peripheral circuit sensitizing range of 5nJ
To peak value 50mA or so transient current pulse, the pulse duration in 0.5 μ s or so, and the appearance of such current impulse with
Data flipping has synchronism.Although it is existing that part locking can't show the high current similar with traditional single event latchup
As, but their principle is consistent, and generating root is the P-N-P-N construction in circuit.After single-particle is incident, if charge
It collects pressure drop of the transient current formed in N well resistance and is greater than PNP pipe forward conduction voltage, then parasitic PNP pipe conducting, in this way
There to be electric current to flow through substrate, and trigger NPN transistor, the electric current for passing through N well resistance is further up, finally makes two crystalline substances
Body pipe all reaches saturation and is latched.With the continuous reduction of integrated circuit feature size, more and more deep-submicrons
Cmos device shows local locks with respect phenomenon, and local locks with respect and its propagation have direct correlation with single event multiple bit upset.Therefore,
It is horizontal in view of the lower anti-single particle of ferroelectric memory peripheral circuit, preferentially it reinforce very necessary.
Reinforcing chip is treated using the source 60Co gamma-rays to be irradiated, and the phase interaction of energetic gamma rays and ferroelectric material is passed through
With introducing electron hole pair into ferroelectric thin film.Electrons and holes form defect capture electricity by the capture of the defects of ferroelectric capacitor
Lotus.The built in field pair generated in capacitor using pinning effect and defect capture charge of the defect capture charge to electricdomain domain wall
The screen effect of depolarization field improves the anti-interference ability of ferroelectric capacitor, to improve the anti-single particle overturning water of ferroelectric memory
It is flat.
But since influence of the trapped charge to ferroelectric capacitor polarization characteristic and polarized state locating for predose capacitor are close
Correlation is treated using the source 60Co gamma-rays and reinforces chip and irradiated, by the interaction of energetic gamma rays and ferroelectric material,
The method that electron hole pair is introduced into ferroelectric thin film is more suitable for the chip of storage fixed data, for needing during service
For the chip of random storage new data, consolidation effect is limited, and trapped charge can passage at any time generate it is obvious
Annealing, makes consolidation effect degenerate, ferroelectric memory single particle effect sensitizing range is located at peripheral circuit, adds to storage array merely
Admittedly cannot be solved the problems, such as from source.
Summary of the invention
The object of the present invention is to provide a kind of ferroelectricity storages of anti-single particle overturning ability that can be improved ferroelectric memory
Device anti-single particle overturns reinforcement means and system.
To achieve the above object, the present invention provides following schemes:
A kind of ferroelectric memory anti-single particle overturning reinforcement means, the reinforcement means include:
Functional verifications and population parameter test are carried out to multiple ferroelectric memorys to be reinforced, obtain functional verification result and complete
Parameter testing result；
Multiple performances normally ferroelectric memory to be reinforced is chosen according to functional verification result and population parameter test result,
Obtain normal ferroelectric memory to be reinforced；
Multiple neutron pre-irradiation fluence nodes are chosen, and by multiple normal ferroelectric memorys to be reinforced according to described
The grouping of neutron pre-irradiation fluence node number；
Normal ferroelectric memory to be reinforced described in each group is placed in pulsed reactor irradiation channel, the reactor is steady
Until the normal ferroelectric memory to be reinforced is irradiated to corresponding neutron fluence node, acquisition pre-irradiation ferroelectricity is deposited for state operation
Reservoir；
Artificial radioactivity monitoring is carried out to the pre-irradiation ferroelectric memory, until the pre-irradiation ferroelectric memory is inducted
Radioactive intensity takes out the pre-irradiation ferroelectric memory after being reduced to secure threshold, obtains and reinforces ferroelectric memory；
Functional verification and population parameter test are carried out to the reinforcing ferroelectric memory, reinforcing ferroelectric memory function is obtained and tests
It demonstrate,proves result and reinforces ferroelectric memory population parameter test result；
By the functional verification result, the population parameter test result and the reinforcing ferroelectric memory functional verification knot
Fruit, reinforcing ferroelectric memory population parameter test result are compared, and are taken out the reinforcing ferroelectric memory of performance degradation, are obtained
It is normal to reinforce ferroelectric memory；
The normal reinforcing ferroelectric memory is subjected to single-particle inversion test, acquisition can satisfy the best of reinforcing demand
Neutron fluence.
Optionally, described that the normal reinforcing ferroelectric memory is carried out single-particle inversion test, acquisition, which can satisfy, to be added
Gu the best neutron fluence of demand.It specifically includes:
The normal reinforcing ferroelectric memory is subjected to single-particle inversion experiment in heavy ion avcceleration；
As a control group, single-particle inversion experiment will be carried out without ferroelectric memory to be reinforced described in neutron irradiation；
Statistics overturning number, roll data and overturning address during the experiment, are calculated under different neutron fluences described
The normal SEU cross section for reinforcing ferroelectric memory and the normal ferroelectric memory to be reinforced；
According to the SEU cross section, acquisition can make the SEU cross section be reduced to the minimum of minimum value
Neutron fluence.
To achieve the goals above, the present invention also provides following schemes:
A kind of ferroelectric memory anti-single particle overturning hardened system, the hardened system include:
Test module obtains function for carrying out functional verification and population parameter test to multiple ferroelectric memorys to be reinforced
It is able to verify that result and population parameter test result；
Brush modeling block, for choosing multiple performances normally wait reinforce according to functional verification result and population parameter test result
Ferroelectric memory, obtain normal ferroelectric memory to be reinforced；
Grouping module, for choosing multiple neutron pre-irradiation fluence nodes, and by multiple normal ferroelectricities to be reinforced
Memory is grouped according to the neutron pre-irradiation fluence node number；
Pre-irradiation module, for normal ferroelectric memory to be reinforced described in each group to be placed in pulsed reactor irradiation channel
Interior, the steady state reactor operation is irradiated to corresponding neutron fluence node up to the normal ferroelectric memory to be reinforced,
Obtain pre-irradiation ferroelectric memory；
Radiation module, for carrying out artificial radioactivity monitoring to the pre-irradiation ferroelectric memory, until the pre-irradiation
The pre-irradiation ferroelectric memory is taken out after ferroelectric memory artificial radioactivity strength reduction to secure threshold, is obtained and is reinforced ferroelectricity
Memory；
Authentication module obtains for carrying out functional verification and population parameter test to the reinforcing ferroelectric memory and reinforces iron
Electrical storage functional verification result and reinforcing ferroelectric memory population parameter test result；
Comparison module, for storing the functional verification result, the population parameter test result and the reinforcing ferroelectricity
Device functional verification result, reinforcing ferroelectric memory population parameter test result are compared, and take out the reinforcing iron of performance degradation
Electrical storage obtains normal reinforcing ferroelectric memory；
Flip module can satisfy for the normal reinforcing ferroelectric memory to be carried out single-particle inversion test
The best neutron fluence of reinforcing demand.
The specific embodiment provided according to the present invention, the invention discloses following technical effects: one kind provided by the invention
Ferroelectric memory anti-single particle overturns reinforcement means and system, and the normal reinforcing ferroelectric memory is carried out single-particle inversion survey
Examination obtains the best neutron fluence that can satisfy reinforcing demand, realizes in Top-layer Design Method and the life for not changing ferroelectric memory
Production. art condition, under conditions of the encapsulation and the working sequence that also do not change ferroelectric memory, by the ferroelectric memory of reinforcing
It can be directly used for replacing unguyed ferroelectric memory, without redesigning circuit, saved development cost.
Integral reinforcing can be carried out to the peripheral circuit based on CMOS technology, without positioning the sensitizing range of single-particle inversion,
Significantly shorten experimental period.
Using pile neutron, fluence rate is high, and irradiated area is big, can carry out large batch of Radiation Hardened processing, mention
High reinforcing efficiency.
It is irradiated using neutron, minority carrier life time is to change most apparent parameter in semiconductor material, and carrier concentration is moved
Shifting rate is small by being influenced.
The displacement damage that neutron introduces can be considered permanent damage, and the ferroelectricity suitable for high reliability long life aircraft is deposited
Reservoir.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is that ferroelectric memory anti-single particle provided by the invention overturns reinforcement means flow diagram；
Fig. 2 is that ferroelectric memory provided by the invention overturns the accumulation of number at any time；
Fig. 3 is the relationship between overturning provided by the invention and transient current pulse；
Fig. 4 is that the FM28V100 ferroelectricity that ferroelectric memory anti-single particle provided by the invention is overturn after reinforcement means reinforcing is deposited
The single-particle inversion test result that memory chip obtains on laser microbeam device.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of ferroelectricity storages of anti-single particle overturning ability that can be improved ferroelectric memory
Device anti-single particle overturns reinforcement means and system.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
The principle of the invention are as follows:
After neutron incidence semiconductor material, energy is transferred to by target atom by collision process, disengages it from lattice position
The gap between dot matrix is squeezed into, is formed Frenkel disorder (Frenkel Defect).For semiconductor material, it is displaced defect
The how sub compound probability with few son is improved, minority carrier life time is caused to reduce；Defect will act on how sub- generation capture simultaneously, make it
Conduction can not be participated in, the concentration decline of more sons is caused；The mobility of carrier also will receive the scattering process of defect and significantly drop
It is low.Among three, influence of the displacement damage to minority carrier life time is the most significant, followed by majority carrier density, and worst is carrier mobility
Rate.Relationship between minority carrier life time and neutron fluence can indicate are as follows:
In formula, τrFor the minority carrier life time after neutron irradiation, Φ is neutron fluence, KrFor minority carrier life time Damage coefficient.Few sub- longevity
The reduction of life will make to get over neutral base area and the minority carrier quantity collected by collector is reduced, and put so as to cause electric current
Big factor beta reduces, when the currentamplificationfactorβ of parasitic vertical and horizontal transistorvAnd βlProduct βv·βlWhen < 1, by nothing
Method forms positive feedback current circuit, so that being latched part is inhibited.
As shown in Figure 1, a kind of ferroelectric memory anti-single particle overturns reinforcement means, the reinforcement means includes:
Functional verifications and population parameter test are carried out to multiple ferroelectric memorys to be reinforced, obtain functional verification result and complete
Parameter testing result；
Multiple performances normally ferroelectric memory to be reinforced is chosen according to functional verification result and population parameter test result,
Obtain normal ferroelectric memory to be reinforced；
Multiple neutron pre-irradiation fluence nodes are chosen, are chosen from 0n/cm2~2 × 1014n/cm2Between multiple fluence sections
Point, and multiple normal ferroelectric memorys to be reinforced are grouped according to the neutron pre-irradiation fluence node number；
Normal ferroelectric memory to be reinforced described in each group is placed in pulsed reactor irradiation channel, the reactor is steady
Until the normal ferroelectric memory to be reinforced is irradiated to corresponding neutron fluence node, acquisition pre-irradiation ferroelectricity is deposited for state operation
Reservoir；
Artificial radioactivity monitoring is carried out to the pre-irradiation ferroelectric memory, until the pre-irradiation ferroelectric memory is inducted
Radioactive intensity takes out the pre-irradiation ferroelectric memory after being reduced to secure threshold, obtains and reinforces ferroelectric memory；
Functional verification and population parameter test are carried out to the reinforcing ferroelectric memory, reinforcing ferroelectric memory function is obtained and tests
It demonstrate,proves result and reinforces ferroelectric memory population parameter test result；
By the functional verification result, the population parameter test result and the reinforcing ferroelectric memory functional verification knot
Fruit, reinforcing ferroelectric memory population parameter test result are compared, and are taken out the reinforcing ferroelectric memory of performance degradation, are obtained
It is normal to reinforce ferroelectric memory；
As shown in Figures 2 and 3, the normal reinforcing ferroelectric memory is subjected to single-particle inversion test, acquisition can expire
Foot reinforces the best neutron fluence of demand.
Fig. 4 is directed to 1Mb ferroelectric memory for what inventor carried out on pulse laser single particle effect simulator
The consolidation effect assessment result of FM28V100, is limited when by experimental machine, is only 1 × 10 to neutron fluence13n/cm2、5×1013n/
cm2And the sample without neutron irradiation is assessed.It can be seen that significantly being dropped by the upset cross section of the chip of neutron pre-irradiation
It is low, and neutron fluence is 5 × 1013n/cm2Chip cross-section it is minimum, consolidation effect is best.In addition, when neutron fluence reaches 5 ×
1013n/cm-2When, the energy threshold that the energy threshold of single-particle inversion is improved to 0.2nJ, and under the conditions of other two kinds is all lower than
0.1nJ is improved with neutron fluence, and the turn threshold of ferroelectric memory improves.According to formula (1), minority carrier life time increases with neutron fluence
Add dull reduction, therefore needs to increase neutron fluence also to further determine that best fluence.
Table 1 is that the reinforcing for 4Mb ferroelectric memory FM22L16 that inventor carries out on HI-13 tandem accelerator is imitated
Fruit assessment result.It is limited when by machine, is only 2 × 10 to neutron fluence14n/cm2Sample carried out experiment it is of the invention to verify
The validity of reinforcement means.Testing the incident ion selected is127I, LET value 65.6MeVcm2·mg-1.The result shows that passing through
After neutron pre-irradiation, the single-particle bit flipping section of sample chip is from 9.5 × 10-11cm2It is reduced to 2.3 × 10-11cm2。
Table 1
Method proposed by the present invention can be such that the SEU cross section of commercial ferroelectric memory significantly reduces.
Described that the normal reinforcing ferroelectric memory is carried out single-particle inversion test, acquisition can satisfy reinforcing demand
Best neutron fluence specifically includes:
The normal reinforcing ferroelectric memory is subjected to single-particle inversion experiment in heavy ion avcceleration；
As a control group, single-particle inversion experiment will be carried out without ferroelectric memory to be reinforced described in neutron irradiation；
Statistics overturning number, roll data and overturning address during the experiment, are calculated under different neutron fluences described
The normal SEU cross section for reinforcing ferroelectric memory and the normal ferroelectric memory to be reinforced；
According to the SEU cross section, acquisition can make the SEU cross section be reduced to the minimum of minimum value
Neutron fluence.And as the standard dose that the overturning of the anti-single particle of this ferroelectric memory is reinforced.
Pulsed laser single event upset cross section can be calculated by following formula:
Wherein: σlFor pulsed laser single event upset cross section；N is overturning number；S is scan area；M is in scan area
Umber of pulse.
Heavy ion SEU cross section can be calculated by following formula:
Wherein N is single-particle inversion number；F is heavy ion fluence；θ is incidence angle.Heavy ion is all vertically to enter in this experiment
It penetrates, i.e. θ=0 °.Therefore upset cross section
To achieve the goals above, the present invention also provides following schemes:
A kind of ferroelectric memory anti-single particle overturning hardened system, the hardened system include:
Test module obtains function for carrying out functional verification and population parameter test to multiple ferroelectric memorys to be reinforced
It is able to verify that result and population parameter test result；
Brush modeling block, for choosing multiple performances normally wait reinforce according to functional verification result and population parameter test result
Ferroelectric memory, obtain normal ferroelectric memory to be reinforced；
Grouping module, for choosing multiple neutron pre-irradiation fluence nodes, and by multiple normal ferroelectricities to be reinforced
Memory is grouped according to the neutron pre-irradiation fluence node number；
Pre-irradiation module, for normal ferroelectric memory to be reinforced described in each group to be placed in pulsed reactor irradiation channel
Interior, the steady state reactor operation is irradiated to corresponding neutron fluence node up to the normal ferroelectric memory to be reinforced,
Obtain pre-irradiation ferroelectric memory；
Radioactivity monitoring module, for carrying out artificial radioactivity monitoring to the pre-irradiation ferroelectric memory, until described
The pre-irradiation ferroelectric memory is taken out after pre-irradiation ferroelectric memory artificial radioactivity strength reduction to secure threshold, is added
Gu ferroelectric memory；
Authentication module obtains for carrying out functional verification and population parameter test to the reinforcing ferroelectric memory and reinforces iron
Electrical storage functional verification result and reinforcing ferroelectric memory population parameter test result；
Comparison module, for storing the functional verification result, the population parameter test result and the reinforcing ferroelectricity
Device functional verification result, reinforcing ferroelectric memory population parameter test result are compared, and take out the reinforcing iron of performance degradation
Electrical storage obtains normal reinforcing ferroelectric memory；
Turnover testing module, for the normal reinforcing ferroelectric memory to be carried out single-particle inversion test, acquisition can
Meet the best neutron fluence of reinforcing demand.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For system disclosed in embodiment
For, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is said referring to method part
It is bright.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (3)
1. a kind of ferroelectric memory anti-single particle overturns reinforcement means, which is characterized in that the reinforcement means includes:
Functional verification and population parameter test are carried out to multiple ferroelectric memorys to be reinforced, obtain functional verification result and population parameter
Test result；
Multiple performances normally ferroelectric memory to be reinforced is chosen according to functional verification result and population parameter test result, is obtained
Normal ferroelectric memory to be reinforced；
Multiple neutron pre-irradiation fluence nodes are chosen, and by multiple normal ferroelectric memorys to be reinforced according to the neutron
The grouping of pre-irradiation fluence node number；
Normal ferroelectric memory to be reinforced described in each group is placed in pulsed reactor irradiation channel, the reactor stable state fortune
Row is until the normal ferroelectric memory to be reinforced is irradiated to corresponding neutron fluence node, acquisition pre-irradiation ferroelectricity storage
Device；
Artificial radioactivity monitoring is carried out to the pre-irradiation ferroelectric memory, the radiation until the pre-irradiation ferroelectric memory is inducted
Property strength reduction to secure threshold after take out the pre-irradiation ferroelectric memory, obtain and reinforce ferroelectric memory；
Functional verification and population parameter test are carried out to the reinforcing ferroelectric memory, obtains and reinforces ferroelectric memory functional verification knot
Fruit and reinforcing ferroelectric memory population parameter test result；
By the functional verification result, the population parameter test result and the reinforcing ferroelectric memory functional verification result, add
Gu ferroelectric memory population parameter test result is compared, the reinforcing ferroelectric memory of performance degradation is taken out, is obtained normal
Reinforce ferroelectric memory；
The normal reinforcing ferroelectric memory is subjected to single-particle inversion test, obtains the best neutron that can satisfy reinforcing demand
Fluence.
2. a kind of ferroelectric memory anti-single particle according to claim 1 overturns reinforcement means, which is characterized in that described to incite somebody to action
The normal reinforcing ferroelectric memory carries out single-particle inversion test, obtains the best neutron fluence that can satisfy reinforcing demand.
It specifically includes:
The normal reinforcing ferroelectric memory is subjected to single-particle inversion experiment in heavy ion avcceleration；
As a control group, single-particle inversion experiment will be carried out without ferroelectric memory to be reinforced described in neutron irradiation；
Statistics overturning number, roll data and overturning address during the experiment are calculated described normal under different neutron fluences
Reinforce the SEU cross section of ferroelectric memory and the normal ferroelectric memory to be reinforced；
According to the SEU cross section, the minimum neutron that the SEU cross section can be made to be reduced to minimum value is obtained
Fluence.
3. a kind of ferroelectric memory anti-single particle overturns hardened system, which is characterized in that the hardened system includes:
Test module obtains function and tests for carrying out functional verification and population parameter test to multiple ferroelectric memorys to be reinforced
Demonstrate,prove result and population parameter test result；
Brush modeling block, for choosing multiple performances normally iron to be reinforced according to functional verification result and population parameter test result
Electrical storage obtains normal ferroelectric memory to be reinforced；
Grouping module is stored for choosing multiple neutron pre-irradiation fluence nodes, and by multiple normal ferroelectricities to be reinforced
Device is grouped according to the neutron pre-irradiation fluence node number；
Pre-irradiation module, for normal ferroelectric memory to be reinforced described in each group to be placed in pulsed reactor irradiation channel,
The steady state reactor operation is irradiated to corresponding neutron fluence node up to the normal ferroelectric memory to be reinforced, and obtains
Pre-irradiation ferroelectric memory；
Radiation module, for carrying out artificial radioactivity monitoring to the pre-irradiation ferroelectric memory, until the pre-irradiation ferroelectricity
The pre-irradiation ferroelectric memory is taken out after memory artificial radioactivity strength reduction to secure threshold, is obtained and is reinforced ferroelectricity storage
Device；
Authentication module obtains reinforcing ferroelectricity and deposits for carrying out functional verification and population parameter test to the reinforcing ferroelectric memory
Reservoir functional verification result and reinforcing ferroelectric memory population parameter test result；
Comparison module is used for the functional verification result, the population parameter test result and the reinforcing ferroelectric memory function
It is able to verify that result, reinforcing ferroelectric memory population parameter test result are compared, the reinforcing ferroelectricity for taking out performance degradation is deposited
Reservoir obtains normal reinforcing ferroelectric memory；
Flip module, for the normal reinforcing ferroelectric memory to be carried out single-particle inversion test, acquisition can satisfy reinforcing
The best neutron fluence of demand.
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| CN114068694A (en) * | 2021-11-11 | 2022-02-18 | 湘潭大学 | Method and system for testing charge collection resistance of germanium-silicon heterojunction bipolar transistor |
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| CN106569068A (en) * | 2016-11-04 | 2017-04-19 | 西北核技术研究所 | Anti-transient-ionizing-radiation effect reinforcement method of SRAM |
| CN106847330A (en) * | 2016-12-29 | 2017-06-13 | 西北核技术研究所 | A kind of ferroelectric memory anti-single particle overturns reinforcement means |
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