CN105016773B - 反应烧结及微氧化处理制备多孔碳化硅陶瓷的方法 - Google Patents
反应烧结及微氧化处理制备多孔碳化硅陶瓷的方法 Download PDFInfo
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CN106565245B (zh) * | 2016-10-19 | 2019-07-26 | 张家港市东大工业技术研究院 | 一种微波原位烧结技术制备碳化硅多孔陶瓷的方法 |
CN112723904B (zh) * | 2021-01-29 | 2023-05-23 | 湖南三安半导体有限责任公司 | SiC多孔烧结体的制备方法、SiC多孔烧结体和SiC晶体 |
CN116410012B (zh) * | 2023-04-12 | 2023-12-29 | 西安交通大学 | 一种碳化硅/硅碳化钼双层陶瓷骨架增强碳基复合材料及制备方法和应用 |
CN116396089B (zh) * | 2023-04-12 | 2023-12-29 | 西安交通大学 | 一种三维碳化硅/碳化钼陶瓷骨架增强碳基复合材料及其制备方法和应用 |
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CN102351538A (zh) * | 2011-07-08 | 2012-02-15 | 西安交通大学 | 一种碳化硅陶瓷的制备方法 |
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