CN105008307B - 无铅压电材料 - Google Patents
无铅压电材料 Download PDFInfo
- Publication number
- CN105008307B CN105008307B CN201380071672.5A CN201380071672A CN105008307B CN 105008307 B CN105008307 B CN 105008307B CN 201380071672 A CN201380071672 A CN 201380071672A CN 105008307 B CN105008307 B CN 105008307B
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- Prior art keywords
- lead
- piezoelectric
- tio
- xbicoo
- free piezoceramic
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 239000000126 substance Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 230000010287 polarization Effects 0.000 claims description 14
- 229910010293 ceramic material Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 229910010252 TiO3 Inorganic materials 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 26
- 239000000919 ceramic Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000012876 carrier material Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005404 monopole Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910002353 SrRuO3 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000005662 electromechanics Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010189 synthetic method Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001269238 Data Species 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- 241001274660 Modulus Species 0.000 description 1
- 229910003378 NaNbO3 Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910020289 Pb(ZrxTi1-x)O3 Inorganic materials 0.000 description 1
- 229910020273 Pb(ZrxTi1−x)O3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000002999 depolarising effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N iridium(IV) oxide Inorganic materials O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- QNZFKUWECYSYPS-UHFFFAOYSA-N lead zirconium Chemical compound [Zr].[Pb] QNZFKUWECYSYPS-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- MUPJWXCPTRQOKY-UHFFFAOYSA-N sodium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Na+].[Nb+5] MUPJWXCPTRQOKY-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001778 solid-state sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8561—Bismuth-based oxides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
一种无铅压电陶瓷材料，其具有化学通式xBiCoO3‑y(Bi0.5Na0.5)TiO3‑z(Bi0.5K0.5)TiO3，xBiCoO3‑y(Bi0.5Na0.5)TiO3‑zNaNbO3，xBiCoO3‑y(Bi0.5Na0.5)TiO3‑zKNbO3，xBiCoO3‑yBi(Mg0.5Ti0.5)O3‑z(Bi0.5Na0.5)TiO3，xBiCoO3‑yBaTiO3‑z(Bi0.5Na0.5)TiO3或xBiCoO3‑yNaNbO3‑zKNbO3；其中x+y+z＝1，且x，y，z≠0。
Description
技术领域
本申请涉及压电陶瓷材料，特别是无铅压电材料。
背景技术
压电陶瓷材料(也称为压电陶瓷(piezoelectric ceramics或piezoceramics))已被广泛用于例如致动器、换能器、谐振器、传感器和随机存取存储器的应用中。例如，压电装置，如压电喷墨印刷头或传感器，可以以用于压电致动(piezoelectric actuation)或压电传感的特定构造通过堆叠各种压电材料、其他膜和金属，例如导体和/或电极来制备。在压电印刷头的情况下，在墨水腔之上或之中的压电致动可被用于从其中喷出或喷射流体。
发明内容
本申请提供了无铅压电材料，其包含BiCoO3(“BC”)作为无铅压电体系的添加物，所述无铅压电体系例如为(Bi0.5Na0.5)TiO3(“BNT”)或(Bi0.5K0.5)TiO3(“BKT”)基体系。
优选地，所公开的压电陶瓷材料的实施例具有以下的化学通式之一：
xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3；
xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaNbO3；
xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3；
xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3；
xBiCoO3-yBaTiO3-z(Bi0.5Na0.5)TiO3；或
xBiCoO3-yNaNbO3-zKNbO3；
其中x+y+z＝1，且x，y，z≠0。
附图说明
图1是说明无铅压电陶瓷材料实施例的范围的组成/相图。
图2是公开的组合物的一个实施例的极化迟滞行为的曲线图。
图3是公开的组合物的一个实施例的双极应变相对于电场的曲线图。
图4是公开的组合物的一个实施例在单极驱动下机电应变的曲线图。
图5是公开的组合物的一个实施例的介电谱的曲线图。
图6是说明喷墨实施例印刷头的一部分的示意图。
具体实施方式
在以下的详细描述中，参照了形成本文一部分的、且其中以具体实施例说明的方式示出的附图。就此而言，方向术语，例如“顶部”、“底部”、“前”、“后”等，参照图(一幅或多幅)中所描述的方向使用。由于可以许多不同的方向定位各种部件，所以方向术语是用于说明的目的，而决不是限制性的。将理解的是，在不背离本发明范围的情况下，可以使用其他版本，且可以做出结构或逻辑的改变。因此，下面的详细说明不应被认为具有限制性意义，本发明的范围由所附的权利要求来限定。将理解的是，本文所描述的各个实施例的特征可以彼此结合，除非特别另外注明。
术语极化迟滞(polarizationhysteresis)是指无铅压电陶瓷材料显示表明为极性状态的非线性极化特征。
术语剩余极化强度(polarization remanence)是指在极化迟滞测量过程中在零场下测量的极化强度。它是极性、非线性电介质的独有的特征。
术语机电应变(electromechanicalstrain)是指电场引起的应变，通常按照一个或多个压电系数(例如d33和d31)来进行表达，其中dij(单位pm/V)是将应变与所施加的电场(kV/cm)联系起来的张量性质。可以以多种不同方式测量d33系数，如压电谐振、直接压电效应、间接压电效应以及其它。在本公开的上下文中，d33系数被计算为最大机电应变与最大施加电场之间的比率(d33＝Smax/Emax)。有时其被描述为有效压电系数或标准应变或d33*。在Y.Hiruma等，J.Appl.Phys.103:084121(2008)中给出了其应用的例子。
在压电陶瓷材料的语境中，术语疲劳是指在施加循环电场后所观察到的极化和机电应变损失。
在无铅压电材料中的各组分的相对量和比例按照摩尔分数或摩尔百分比(mol％)表达。
温度、比率、浓度、量和其他数值数据可以在本文中以范围的形式呈现。将理解的是，这样的范围形式仅仅是为了方便和简洁，应当灵活地解释为不是仅包括所明确列举的作为范围界限的数值，也包括涵盖在该范围内的所有个体数值或子范围，如同每个数值和子范围被明确列举一样。例如，约100℃至约500℃的温度范围应当被解释为不仅包括明确列举的界限100℃和500℃，也包括每个介于其间的温度例如250℃、300℃、350℃和400℃，以及所有的子范围例如300℃至400℃，等等。
术语“约”在涉及数值或范围时，旨在包括由进行测量时可能出现的实验误差所导致的较大或较小的值。这种测量偏差通常在规定数值的±10％之内。
压电材料已经被广泛用于例如致动器、换能器、谐振器、传感器、随机存取存储器等应用。在这些压电陶瓷中，由于其优异的压电性能以及制备过程中进行掺杂改性容易，锆钛酸铅(“PZT”)Pb(ZrxTi1-x)O3及其相关的固溶体已被广泛应用。
存在问题限制了对PZT的使用。一个是由铅的毒性引起的环境问题。另一个问题是与PZT相关的疲劳行为。疲劳是其中材料在电循环载荷过程中失去可翻转极化(switchablepolarization)的现象。已经有许多关于在各种条件下，例如单极驱动、直流(DC)和双极驱动，在不同温度和频率影响下的对PZT疲劳行为的探索。在双极疲劳下的PZT中，普遍认为来自氧空位的带电点缺陷的聚集，或者从电极注入的电荷载流子，抑制了畴壁的移动，且这进而导致了可翻转极化的降低。
本公开提供的无铅压电材料，其包含BiCoO3(“BC”)作为无铅压电体系的添加物，所述无铅压电体系例如为(Bi0.5Na0.5)TiO3(“BNT”)或(Bi0.5K0.5)TiO3(“BKT”)基体系。BC拥有高的极化强度和中等的d33值。此外，由于Co3+的受体性质，添加BiCoO3至无铅压电材料被认为控制了材料的缺陷平衡。许多装置性能例如漏电流和疲劳性能最终都与点缺陷相关联。
图1是本公开的组合物的三元相图示意图。三元组分为xBiCoO3(x≤0.2)，yABO3和zCDO3，其中x+y+z＝1。ABO3和CDO3表示普通无铅压电钙钛矿组合物，例如BaTiO3、NaNbO3、KNbO3，和复合钙钛矿例如(Bi0.5Na0.5)TiO3和(Bi0.5K0.5)TiO3。
所公开的压电陶瓷材料的实施例具有以下的化学通式之一：
xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3；
xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaNbO3；
xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3；
xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3；
xBiCoO3-yBaTiO3-z(Bi0.5Na0.5)TiO3；或
xBiCoO3-yNaNbO3-zKNbO3；
其中x+y+z＝1，且x，y，z≠0。例如，在一些实施方式中0.01≤x≤0.2。在一些实施例中，由于BC固体溶解度的限制，x的最大值被限制在0.1至0.2。
图2显示了2BiCoO3-98BNT的极化迟滞行为，其特征在于完全饱和的回线和接近35μC/cm2的大的剩余极化强度。本文公开的体系的剩余极化强度预计在25-40μC/cm2的范围内。这个极化的水平比得上铅基压电材料例如PZT以及其他已知的无铅备选材料。
图3阐明了2BiCoO3-98BNT的双极应变与电场的关系。图3中所示的双极应变数据展示了表明畴翻转的大的负应变和近0.2％的最大应变。图4阐明了单极驱动下应变值为0.15％的机电应变。这对应于大约180pm/V的有效压电应变系数d33*。对于本文所公开的三元体系，最大机电应变值和压电应变系数d33*预计分别在约0.1％至0.3％和150-500pm/V的范围内。
图5阐明了在300℃显示介电最大值的介电谱。这可表明该材料的去极化温度高达300℃，这将非常适合于复杂装置的制造工艺。
无铅压电陶瓷的制备
A.陶瓷圆片
可以通过任意合适的固态合成方法，使用至少99％纯度的Bi2O3，CoO，Co2O3，Co3O4，Na2CO3，K2CO3，ZnO和TiO2起始粉末来制造本文所述的无铅含BC组合物。所得产品的居里温度(TC)通常在约100℃和约500℃之间。通过改变所述起始粉末的相对量，压电陶瓷的TC可增大或降低。可以调整成分的相对量，以使产品将具有在指定范围内的TC。根据用于制造陶瓷材料的常规固态合成方法，研磨、成形并煅烧粉末以生产所需要的陶瓷产品。如本领域已知的，研磨可以是湿式研磨或干式研磨。例如，可使用高能振动研磨以混合起始粉末和用于煅烧后的碾磨。将粉末与合适的液体(例如，乙醇或水，或液体的组合)相混合，并用合适的高密度研磨介质(例如，氧化钇稳定的氧化锆(YSZ)珠粒)湿磨。煅烧经研磨的粉末，然后使其与粘结剂相混合，形成所需的形状(例如，片)并烧结以生产具有高烧结密度的陶瓷产品。为了测试目的，在电测量之前可将陶瓷圆片抛光至合适的厚度(例如，0.9mm)，并将银浆料(例如，Heraeus C1000)施加至圆片的两面。依据预期的最终用途，可以将高密度BC-BKT-BNT陶瓷圆片或片抛光至约0.5μm至约1μm范围内的厚度，以适合于作为例如压电致动器使用。
B.陶瓷薄膜
当所述BC基陶瓷材料预期应用需要薄膜产品时，可将制造方法改变为包括使用化学前驱体如硝酸铋、异丙醇钛等的化学溶液沉积，或者使用固态烧结的或热压的陶瓷靶材的溅射。任何合适的溅射或化学沉积方法可用于该目的。在一些情况下，所得到的薄膜陶瓷可具有约50nm至约10μm范围内的厚度.
C压电复合物
对于最终用途如传感器或换能器，其需要使用压电复合物，上述烧结的BC基陶瓷材料可以被改性以用于此目的。将陶瓷粉末碾磨或研磨至所需的粒度并装载到聚合物基质中以生成0-3压电复合物。可以使用注射成型或类似的技术使陶瓷粉末形成烧结的棒或纤维，并装载到聚合物基质中以生成1-3压电复合物。依据最终的应用，所述聚合物可以是压电的，例如PVDF，或非压电的例如环氧树脂。
压电印刷头是所公开的无铅压电材料应用的一个实施例。在压电式印刷头的情况下，可使用在墨水腔之上或之中的压电致动器以从其中喷出或喷射流体。可以使所述压电材料生长或以其他方式施加至金属电极的表面上，如铂、钌、钯和铱，以及一些导电和非导电的氧化物，如IrO2、SrRuO3、ZrO2等。
图6是喷墨印刷头100的一部分的示意图。在所阐明的实施例印刷头100中，制造硅载体以包含多个用于接收和从其中喷射墨水的墨水腔112。应注意的是，通常在墨水腔或其中墨水可接触印刷头的其他区域可以被涂覆有任意的数层保护涂层。该涂层未被示出，但将理解的是，在不背离本公开的范围的情况下，这样的涂层可以用于保护目的。例如，钽或钽氧化物涂层，如Ta2O5，常用于该目的。替代地或除了上述硅载体和任选的保护涂层之外，可以使用其他载体材料(一种或多种)。因此，术语“载体”通常包括包含半导体材料的结构如硅片，单独或以包含向其施加了其他材料的组件形式。也可以使用金属载体，包括向其施加了绝缘材料的金属材料。可用于载体材料的某些具体材料包括硅、玻璃、砷化镓、蓝宝石上外延硅(SOS)、锗、锗硅、金刚石、绝缘体上硅薄膜(SOI)材料、氧选择性注入(SIMOX)基材，或其他类似的材料。此外，本文所描述的基材实际上可为载体材料，特别是当载体材料本身包含经氧化的表面时。然而，在许多典型实施例中，将单独的经氧化材料的膜施加至载体并充当基材。
在图6中，印刷头100包含基材114、第一金属电极118、压电层120、第二金属电极122和钝化层124。在一些印刷头实施例中，在所述基材114和压电层120之间提供有粘合剂层116。可以采用任意适宜的粘合剂。一些典型的印刷头可额外地包含另外的层，包括其他未示出的绝缘层、半导电层、导电层或保护层。然而，本领域技术人员会认识到，可任选地的使用其他层，或者任选地从所阐明的结构中将其省略。
在所示的系统中，所述第一金属电极118和第二金属电极122用来产生相对于所述压电层120的电场，随着压电层被致动，薄膜堆叠弯曲至合适的墨水腔12，引起喷墨的发生。所述基材层114可以为自身在其表面上存在氧化物层的载体材料，但通常以将氧化物膜施加到载体材料的形式制备，所述氧化物例如为SiO2、ZrO2、HfO2、Ta2O5、Al2O3、SrTiO3等。这些薄膜可以以多层的形式施加，和/或使用在共同层中的多种材料来制备。因此，通常以一层或多层的形式将所述材料施加到硅或上述的其他载体材料。当基材为薄膜或膜的形式时，可在例如至10μm的厚度下形成基材。在一个压电致动器装置的实施例中，该基材的厚度，例如氧化膜，可大致与压电层的厚度相同，例如基材层与压电层的厚度比率在1:2至2:1，且两个层都可以为约50nm或更大。
在图6所阐明的印刷头100中，示出了钝化层124，其可由任何适宜的材料形成，包括但不限于湿法或干法二氧化硅、铝氧化物(例如Al2O3)、碳化硅、氮化硅、原硅酸四乙酯基氧化物、硼磷硅酸盐玻璃、磷硅酸盐玻璃或硼硅酸盐玻璃、HfO2、ZrO2等等。该层适宜的厚度可以是10nm至1μm，然而也可以使用该范围之外的厚度。
可以在约5nm至5微米的厚度来应用金属电极118、122，然而也可以使用该范围之外的厚度。可以使用的材料，特别是用于电极的材料，通常包括贵金属或其他金属或合金，包括但不限于铂、铜、金、钌、铱、银、镍钼、铑和钯。在其他实施例中，如果本公开中的粘合剂层的粘合性能会有利于使用，也可以使用这些金属或其他金属的氧化物，例如IrO2或SrRuO3。作为受益于本公开的粘合剂层的金属，铂是特别受到关注的，因为其表面不会变得容易被氧化。可以使用任何本领域已知的技术来沉积金属电极(或为其他目的应用的金属，例如导电层或迹线)，所述技术例如为溅射、蒸发、在基材上生长金属、等离子体沉积、电镀等。
根据本公开，图6中所阐明的压电层120包含无铅压电陶瓷材料，其具有化学通式
xBiCoO3-y(Bi0.5Na0.5)TiO3-z(Bi0.5K0.5)TiO3；
xBiCoO3-y(Bi0.5Na0.5)TiO3-zNaNbO3；
xBiCoO3-y(Bi0.5Na0.5)TiO3-zKNbO3；
xBiCoO3-yBi(Mg0.5Ti0.5)O3-z(Bi0.5Na0.5)TiO3；
xBiCoO3-yBaTiO3-z(Bi0.5Na0.5)TiO3；或
xBiCoO3-yNaNbO3-zKNbO3；
如上文所论述的，其中x+y+z＝1，且x，y，z≠0。对于薄膜结构，所述压电层120可以具有例如在约50nm至约10μm范围内的厚度。在其他的印刷头设计中，例如在成块地使用本公开的无铅压电陶瓷材料的那些印刷头中，将相应地调整尺寸和层构造。
尽管本文已经阐明和描述具体实施方案，本领域普通技术人员将意识到的是，在不背离本发明的范围的情况下，各种替代方案和/或等同实施方式可以代替所示出和描述的具体实施方案。本申请旨在覆盖本文所论述的具体实施方案的任何的改用或变型。因此，旨在仅由权利要求及其等同内容来限制本发明。
Claims (9)
1.一种无铅压电陶瓷材料，其具有化学通式：
xBiCoO3-yNaNbO3-zKNbO3；
其中x+y+z=1，且x，y，z≠0。
2.权利要求1所述的无铅压电陶瓷材料，其中0.01≤x≤0.2。
3.权利要求1所述的无铅压电陶瓷材料，其中x≤0.2。
4.权利要求1所述的无铅压电陶瓷材料，其中所述陶瓷材料具有150-500 pm/V的有效压电应变系数d33*。
5.权利要求1所述的无铅压电陶瓷材料，其中所述陶瓷材料具有0.1%至0.3%的最大机电应变值。
6.权利要求1所述的无铅压电陶瓷材料，其中所述陶瓷材料具有25-40μC/cm2的剩余极化强度。
7.权利要求1所述的无铅压电陶瓷材料，其中所述陶瓷材料具有等于或超过铅基压电材料的剩余极化强度。
8.权利要求1所述的无铅压电陶瓷材料，其中所述陶瓷材料是薄膜堆叠的压电层，且其中所述压电层位于所述薄膜堆叠的第一和第二金属层之间。
9.权利要求8所述的无铅压电陶瓷材料，其中所述薄膜堆叠是用于流体喷出装置的致动器。
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| GB2584131B (en) | 2019-05-22 | 2022-06-01 | Xaar Technology Ltd | Method of preparing a solid solution ceramic material having increased electromechanical strain, and ceramic materials obtainable therefrom |
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| JP4177615B2 (ja) | 2002-08-15 | 2008-11-05 | 太陽誘電株式会社 | 圧電磁器組成物、圧電磁器組成物の製造方法および圧電セラミック部品 |
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| JP4044951B2 (ja) * | 2005-11-16 | 2008-02-06 | 本多電子株式会社 | 圧電セラミックス材料 |
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| EP2948417B1 (en) | 2018-07-11 |
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