CN104993824B - Silicon substrate low-leakage current double cantilever beam can moving grid frequency divider - Google Patents
Silicon substrate low-leakage current double cantilever beam can moving grid frequency divider Download PDFInfo
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- CN104993824B CN104993824B CN201510378509.4A CN201510378509A CN104993824B CN 104993824 B CN104993824 B CN 104993824B CN 201510378509 A CN201510378509 A CN 201510378509A CN 104993824 B CN104993824 B CN 104993824B
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- 239000000758 substrate Substances 0.000 title claims abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 phosphonium ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Abstract
The silicon substrate low-leakage current double cantilever beam of the present invention can moving grid frequency divider by silicon substrate, the enhanced MOSFET of N-type, external low pass filter, voltage controlled oscillator, multiplier, high frequency choke coil are formed.MOSFET grid is two cantilever beams being suspended on gate oxide, is controlled by direct current biasing, and as the input of reference signal and feedback signal.The actuation voltage of cantilever beam is designed as MOSFET threshold voltage.Two cantilever beams can moving grid when being in suspended state, MOSFET cut-offs, gate capacitance is smaller, can reduce grid leakage current.Two cantilever beams can moving grid pull down when being contacted with gate oxide, MOSFET conductings, reference signal is multiplied with feedback signal through MOSFET, and the frequency dividing of reference signal is realized by low pass filter, voltage controlled oscillator and multiplier.Pull down single cantilever beam can moving grid, amplification to individual signals can be achieved, circuit has multi-functional.The present invention reduces leakage current, and volume is smaller, and realizes multi-functional.
Description
Technical field
The present invention proposes the movable gate MOSFET of silicon substrate low-leakage current double cantilever beam, and (metal oxide semiconductor field-effect is brilliant
Body pipe) frequency divider, belong to the technical field of microelectromechanical systems.
Background technology
Frequency divider is a kind of frequency synthesis module for microwave high-speed radiocommunication equipment.It can be with one with reference to letter
Number it is standard, produces a large amount of discrete reference signal frequency 1/N frequency signal.At present, frequency divider is just widely used in instrument
The every field such as instruments and meters, remote-control romote-sensing communication, radar, electronic countermeasure, navigation and radio and television.But conventional divider
With the shortcomings of complicated, size is larger, it is often more important that, in circuit the presence of MOSFET element grid leakage current cause electricity
The power consumption increase on road.
Microelectromechanical systems has small volume, low in energy consumption, low cost and other advantages, meets the development trend of modern circuits,
In addition, the development of micromachine cantilever beam structure is also increasingly mature.The purpose of the present invention is exactly to propose a kind of silicon substrate low-leakage current
The movable gate MOSFET frequency divider of double cantilever beam.
The content of the invention
Technical problem:The purpose of the present invention is to propose to a kind of movable gate MOSFET frequency dividing of silicon substrate low-leakage current double cantilever beam
Device.MOSFET grid is two movable cantilever beams, cantilever beam can moving grid controlled by direct current biasing, make MOSFET in cut-off shape
State realizes the disengaging of grid and gate oxide, reduces grid leakage current, reduces power consumption.
Technical scheme：The present invention a kind of silicon substrate low-leakage current double cantilever beam can moving grid frequency divider make a living on a silicon substrate
The enhanced MOSFET frequency dividers of N-type, including source electrode, drain electrode, gate oxide, anchor area, cantilever beam can moving grid, drop-down pole plate, insulation
Layer, through hole, lead, source ground；
Source electrode, drain electrode, gate oxide are provided with a silicon substrate, and gate oxide is located between source electrode, drain electrode, and lead passes through logical
Hole connects drain electrode, gate oxide respectively；Cantilever beam can one end of moving grid be fixed in anchor area, the other end across on gate oxide,
Drop-down pole plate on a silicon substrate is located at cantilever beam can be below the end of moving grid, and drop-down pole plate ground connection, insulating barrier is covered in drop-down
On pole plate；Direct current biasing by high frequency choke coil and anchor area act on cantilever beam can on moving grid, cantilever beam can moving grid drop-down
Voltage is arranged to MOSFET threshold voltage；
MOSFET drain electrode output signal has two kinds of different working methods, and one kind is selection first port access low pass filtered
Ripple device, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output access multiplier through the 3rd port, and multiplier is defeated
Go out one cantilever beam is loaded into by anchor area as feedback signal can be on moving grid, it is outstanding that reference signal by anchor area is loaded into another
Arm beam can be on moving grid；Another working method of MOSFET drain electrode output signal is optional directly defeated by second port
Go out.
Described cantilever beam can moving grid drop-down or suspend by direct current biasing control, when two cantilever beams can moving grid exist
Reach or surpass under the direct current biasing of actuation voltage realize drop-down, when being contacted with gate oxide, MOSFET conducting, reference signal and
Feedback signal is multiplied by MOSFET, and drain electrode output includes the phase information of two signals, selects first port input low pass filtered
Ripple device, low pass filter filter out HFS, and output includes the DC voltage of phase information, DC voltage input VCO
Device, as the output frequency of control voltage regulation voltage controlled oscillator, the signal after regulating frequency is through the 3rd port transmission to multiplication
Device, multiplier output signal is loaded into cantilever beam as feedback signal can be on moving grid, and the result of looped cycle feedback is feedback letter
Number, voltage controlled oscillator port output frequency f equal with the frequency of reference signaloFor the 1/N of reference signal frequency：fref/ N, realize
The frequency dividing of reference signal；
When direct current biasing is less than actuation voltage, two cantilever beams can moving grid do not pull down in suspended state, not with grid oxygen
When changing layer contact, MOSFET cut-offs, gate capacitance is smaller, can effectively reduce leakage current, reduces power consumption；
When only cantilever beam can moving grid drop-down, another cantilever beam can moving grid when be in suspended state, drop-down is hanged
Arm beam can moving grid raceway groove formed below, the cantilever beam not being pulled down can moving grid high resistance area formed below, raceway groove connects with high resistance area
Structure be advantageous to improve MOSFET breakdown reverse voltage, the gating signal that the cantilever beam being only pulled down can be on moving grid can be with
Amplified by MOSFET, amplified signal selection second port output, when the cantilever beam of only loading reference signal can moving grid drop-down
When, reference signal is amplified by MOSFET, second port output reference signal frequency frefAmplified signal, it is anti-when only loading
The cantilever beam of feedback signal can moving grid drop-down when, feedback signal is amplified by MOSFET, feedback frequency signal be voltage controlled oscillator it is defeated
Go out frequency foN result is multiplied by after multiplier：N×fo, second port output frequency is N × foAmplified signal.
Beneficial effect：Compared with existing frequency divider, this new silicon substrate low-leakage current double cantilever beam can moving grid
MOSFET frequency dividers use grid of two cantilever beams as MOSFET, and in MOSFET cut-off states, cantilever beam can moving grid and grid
The disengaging of oxide layer, circuit leakage current can be reduced, reduce power consumption；In addition, cantilever beam can moving grid structure to facilitate circuit controllable,
Not only can two cantilever beams can moving grid pull down when realize the frequency dividing of reference signal frequency, additionally it is possible to pulling down single cantilever
Beam can realize amplification to individual signals during moving grid, and the knot that raceway groove is connected with high resistance area can be formed during moving grid by pulling down single cantilever beam
Structure, it is possible to increase MOSFET breakdown reverse voltage；The use of the movable gate technique of micromachine cantilever beam, also cause simple in construction
Change, volume miniaturization.
Brief description of the drawings
Fig. 1 is the top view of the movable gate MOSFET frequency divider of silicon substrate low-leakage current double cantilever beam of the present invention.
Fig. 2 is the A-A ' of the movable gate MOSFET frequency divider of Fig. 1 silicon substrate low-leakage current double cantilever beams to profile.
Fig. 3 is the B-B ' of the movable gate MOSFET frequency divider of Fig. 1 silicon substrate low-leakage current double cantilever beams to profile.
Fig. 4 be Fig. 1 be based on two cantilever beams of the movable gate MOSFET of silicon substrate low-leakage current double cantilever beam can moving grid when pulling down
Raceway groove schematic diagram.
Fig. 5 be Fig. 1 based on the movable gate MOSFET of silicon substrate low-leakage current double cantilever beam pull down single cantilever beam can moving grid when
Raceway groove schematic diagram.
Have in figure：Silicon substrate 1, sets the enhanced MOSFET of N-type on a silicon substrate, and external low pass filter is voltage-controlled
Oscillator, multiplier, high frequency choke coil.MOSFET includes source electrode 2, drain electrode 3, gate oxide 4, anchor area 5, cantilever beam can moving grid 6,
Pull down pole plate 7, insulating barrier 8, through hole 9, lead 10, first port 11, second port 12, the 3rd port 13, the 4th port 14.
Embodiment
A kind of movable gate MOSFET frequency divider of silicon substrate low-leakage current double cantilever beam of the present invention.Strengthen including silicon substrate, N-type
Type MOSFET, and external low pass filter, voltage controlled oscillator, multiplier, high frequency choke coil, wherein MOSFET are grown in silicon
On substrate, including source electrode, drain electrode, gate oxide, two cantilever beams can moving grid, anchor area, drop-down pole plate, insulating barriers.Source electrode and leakage
Pole is oppositely arranged, and gate oxide is connected between source and drain, and cantilever beam forms MOSFET's by anchor area on gate oxide
Grid, drop-down pole plate are arranged on below cantilever beam end, and drop-down pole plate ground connection, insulating barrier is covered on drop-down pole plate.
Reference signal and feedback signal are carried in cantilever beam by anchor area can be on moving grid, and direct current biasing passes through high frequency choke coil
Acting on cantilever beam with anchor area can be on moving grid, and MOSFET actuation voltage is designed as MOSFET threshold voltage.
When direct current biasing is less than actuation voltage, cantilever beam can moving grid do not contacted with gate oxide, MOSFET can not be turned on,
Gate capacitance is smaller, can effectively reduce the generation of leakage current, reduces circuit power consumption.
When two cantilever beams can moving grid by reach or surpass actuation voltage direct current biasing pull down, connect with gate oxide
When touching, MOSFET conductings, reference signal is multiplied with feedback signal by MOSFET.Drain electrode output signal contain reference signal and
Phase information between feedback signal.Low pass filter filters out the high fdrequency component in this signal, output and phase information
Relevant DC voltage, control voltage regulation voltage controlled oscillator output frequency, voltage controlled oscillator output signal by multiplier it
Afterwards, the corresponding change for occurring N times in frequency, and conduct feedback signal be re-loaded to cantilever beam can be on moving grid, by loop
Circulation feedback effect, feedback signal and reference signal reach locking, i.e. voltage controlled oscillator output frequency is multiplied by after N and reference
Signal frequency is equal.The signal frequency of final voltage controlled oscillator output is the 1/N of reference signal frequency, realizes point of reference signal
Frequently.
When only cantilever beam can moving grid be pulled down and contacted with gate oxide, another cantilever beam can moving grid be in and suspend
During state, the arm beam grid raceway groove formed below of drop-down, the cantilever beam of suspension can be high resistance area below moving grid, and raceway groove is gone here and there with high resistance area
The structure of connection is advantageous to improve MOSFET breakdown reverse voltages, strengthens anti-breakdown.Now, only select the cantilever beam of drop-down can
Gating signal on moving grid can be amplified by MOSFET to be exported.So as to by a cantilever beam can moving grid independent control,
The amplification to individual signals is realized, expands the application of circuit.
The movable gate MOSFET frequency divider of silicon substrate low-leakage current double cantilever beam of the present invention is done further below in conjunction with the accompanying drawings
Explain.
The frequency divider based on the movable gate MOSFET of cantilever beam of the present invention includes silicon substrate 1, sets N-type on a silicon substrate
Enhanced MOSFET, external low pass filter, voltage controlled oscillator, multiplier, high frequency choke coil.MOSFET includes source electrode 2, leakage
Pole 3, gate oxide 4, anchor area 5, cantilever beam can moving grid 6, pull down pole plate 7, insulating barrier 8, through hole 9, lead 10, wherein, source electrode 2 connects
Ground.
MOSFET grid can moving grid 6 using two cantilever beams being suspended on gate oxide 4 in the present invention.Source electrode
2 are oppositely arranged with drain electrode 3, and gate oxide 4 is connected between source and drain, and anchor area 5 is arranged on the side of gate oxide 4, pull down pole plate 7
Being arranged on cantilever beam can be below the end of moving grid 6, and insulating barrier 8 is covered on drop-down pole plate 7.
A kind of working method of MOSFET 3 output signals of drain electrode is that selection first port 11 is inputted to low pass filter, low
Pass filter output signal accesses voltage controlled oscillator, and voltage controlled oscillator output signal accesses multiplier, multiplier by port 13
Output one cantilever beam is loaded into by anchor area 5 as feedback signal can be on moving grid 6.Reference signal is loaded into by anchor area 5
Another cantilever beam can be on moving grid 6.Another working method of MOSFET 3 output signals of drain electrode is that selection second port 12 is direct
Export amplified signal.
Direct current biasing acts on cantilever beam by high frequency choke coil and anchor area 5 can be on moving grid 6.Cantilever beam can be under moving grid 6
Pull-up voltage is arranged to MOSFET threshold voltage.
When direct current biasing is less than actuation voltage, two cantilever beams can moving grid 6 when being in suspended state, without grid and grid
Oxide layer 4 contacts, and MOSFET is in cut-off state, and gate capacitance is less than the MOSFET of traditional structure, can effectively reduce electric leakage
The generation of stream, reduce circuit power consumption.
When two cantilever beams can moving grid 6 pass through reach or surpass actuation voltage direct current biasing realize drop-down and gate oxidation
When layer 4 contacts, MOSFET is turned on, and raceway groove schematic diagram is as shown in Figure 4.Reference signal and feedback signal realize phase by MOSFET
Multiply.3 output signals that drain contain the phase information between reference signal and feedback signal, select first port 11 input to
Low pass filter, low pass filter filter out the high fdrequency component in this signal, and conveying one to voltage controlled oscillator includes phase difference
The DC voltage of information, DC voltage can be adopted and be represented by the following formula：
Wherein K is MOSFET gain coefficients, frefFor reference signal frequency, fbackFor feedback frequency signal, φ is intrinsic phase
Potential difference.Voltage controlled oscillator adjusts the size of output frequency in the presence of DC voltage.Voltage controlled oscillator output frequency can lead to
Cross following differential representation formula expression：
Wherein, foFor voltage controlled oscillator output frequency, KvFor voltage controlled oscillator sensitivity.After multiplier, output frequency
It is changed into original N times, and is used as feedback signal, being re-loaded to cantilever beam can be on moving grid 6.Namely：
fback=N × fo (3)
By the ringing of loop, the frequency of feedback signal is final consistent with reference signal.I.e.：
The signal frequency of the final port 14 of voltage controlled oscillator the 4th output is the 1/N of reference signal frequency, is realized with reference to letter
Number frequency dividing.
Only cantilever beam can moving grid 6 be pulled down, another cantilever beam can moving grid 6 when being in suspended state, drop-down
Cantilever beam can 6 raceway groove formed below of moving grid, the cantilever beam not being pulled down can the lower section of moving grid 6 be high resistance area, as shown in figure 5, raceway groove
The structure connected with high resistance area is advantageous to improve MOSFET breakdown reverse voltage.The cantilever beam only pulled down can be on moving grid 6
Gating signal can amplify through MOSFET, and amplified signal selection second port 12 exports.When the cantilever for only loading reference signal
Beam can moving grid 6 pull down when, reference signal is amplified by MOSFET, and the output frequency of second port 12 is frefAmplified signal.When only
Have loading feedback signal cantilever beam can moving grid 6 pull down when, feedback frequency signal is pressuring controlling oscillator frequency foBy multiplier
N result, i.e. N × f are multiplied by afterwardso, the output frequency of second port 12 is N × foAmplified signal.So as to by a cantilever beam
Can moving grid 6 independent control, realize the amplification to individual signals, circuit has multi-functional, expands the application of circuit.
The preparation method of the movable gate MOSFET frequency divider of silicon substrate low-leakage current double cantilever beam of the present invention is as follows：
1) p-type Si substrates are prepared；
2) bottom oxide growth
3) deposited silicon nitride；
4) photoetching, etch silicon nitride formation MOSFET source electrode and drain electrode；
5) field aoxidizes；
6) silicon nitride and basal oxygen sheet are removed；
7) gate oxidation is carried out, adjusting threshold voltage, it is enhanced to make MOSFET；
8) deposit polycrystalline silicon, and photoetching, the polysilicon of the anchor zone position of cantilever beam is retained；
9) plating evaporation growth Al；
10) photoresist is coated, retains the photoresist above drop-down pole plate；
11) Al is anti-carved, forms drop-down pole plate；
12) deposition insulating layer, the Si that 0.1 μm of epitaxial growthxN1-xInsulating barrier；
13) photoetching window, unnecessary Si is etched awayxN1-x：
14) photoresist is coated, retains the insulating barrier of drop-down pole plate；
15) reactive ion etching is utilized, the silicon nitride medium layer formed on drop-down pole plate；
16) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retaining cantilever beam can be below moving grid
Sacrifice layer；
17) plating evaporation growth Al；
18) photoresist is coated, retains the photoresist above cantilever beam；
19) Al is anti-carved, forming cantilever beam can moving grid；
20) photoresist is coated, photoetching hand-hole, injects N+ phosphonium ions, forms MOSFET source and drain electrode；
21) through hole and lead are made, coats photoresist, removes the photoresist of source-drain electrode contact zone, is evaporated in vacuo gold germanium
Ni au, peel off, alloying forms Ohmic contact；
22) PMGI sacrifice layers are discharged, the cantilever beam for forming suspension can moving grid；
23) MOSFET of preparation is connected with external circuit, forms frequency divider.
Difference with the prior art of the present invention is：
MOSFET uses grid of two movable cantilever beams as MOSFET, reference signal and feedback signal in the present invention
Be loaded into respectively two cantilever beams can on moving grid, by direct current biasing control cantilever beam can moving grid drop-down and suspension.Cantilever beam
Actuation voltage be designed as MOSFET threshold voltage, to control MOSFET conducting and cut-off.In MOSFET cut-off states
Cantilever beam can moving grid disengaged with gate oxide, the generation of leakage current can be reduced；When two cantilever beams can moving grid pull down
When, reference signal is multiplied with feedback signal by MOSFET, and in low pass filter, the circulation of voltage controlled oscillator and multiplier is anti-
Under feedback effect, the frequency dividing of reference signal is finally realized；Moreover it is possible to by control single cantilever beam can moving grid realize to single choosing
The amplification of messenger, pull down single cantilever beam can moving grid when, the structure that raceway groove is connected with high resistance area can be formed, be favorably improved
MOSFET breakdown reverse voltage；The use of micro mechanical technology so that circuit power consumption reduces, and simple in construction, volume diminishes.
Claims (1)
1. a kind of silicon substrate low-leakage current double cantilever beam can moving grid frequency divider, it is characterised in that the frequency divider is made a living in silicon substrate (1)
On the enhanced MOSFET frequency dividers of N-type, including source electrode (2), drain electrode (3), gate oxide (4), anchor area (5), cantilever beam be movable
Grid (6), drop-down pole plate (7), insulating barrier (8), through hole (9), lead (10), source electrode (2) ground connection；
Source electrode (2), drain electrode (3), gate oxide (4) are provided with silicon substrate (1), gate oxide (4) is located at source electrode (2), drain electrode
(3) between, lead (10) connects drain electrode (3), gate oxide (4) respectively by through hole (9)；Cantilever beam can one end of moving grid (6) consolidate
It is scheduled in anchor area (5), for the other end across on gate oxide (4), the drop-down pole plate (7) on silicon substrate (1) is located at cantilever beam
Can be below the end of moving grid (6), drop-down pole plate (7) ground connection, insulating barrier (8) is covered on drop-down pole plate (7)；Direct current biasing leads to
Cross high frequency choke coil and anchor area (5) act on cantilever beam can on moving grid (6), cantilever beam can the actuation voltage of moving grid (6) be arranged to
MOSFET threshold voltage；
MOSFET drain electrode (3) output signal has two kinds of different working methods, and one kind is that selection first port (11) access is low
Bandpass filter, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output access multiplier through the 3rd port (13),
Multiplier output is loaded into a cantilever beam as feedback signal by anchor area (5) can be on moving grid (6), and reference signal passes through anchor area
(5) being loaded into another cantilever beam can be on moving grid (6)；Another working method of MOSFET drain electrode (3) output signal is can
Selection is directly exported by second port (12)；
Cantilever beam can moving grid (6) drop-down or suspend by direct current biasing control, when two cantilever beams can moving grid (6) reaching
Or more than under the direct current biasing of actuation voltage realize drop-down, when contact with gate oxide (4), MOSFET conducting, reference signal with
Feedback signal is multiplied by MOSFET, and drain electrode (3) output includes the phase information of two signals, selects first port (11) input
Low pass filter, low pass filter filter out HFS, and output includes the DC voltage of phase information, DC voltage input pressure
Controlled oscillator, as the output frequency of control voltage regulation voltage controlled oscillator, the signal after regulating frequency is through the 3rd port (13)
Transmit to multiplier, multiplier output signal as feedback signal be loaded into cantilever beam can on moving grid (6), looped cycle feedback
Result is that feedback signal is equal with the frequency of reference signal, voltage controlled oscillator port (14) output frequency foFor reference signal frequency
1/N：fref/ N, realize the frequency dividing of reference signal；
When direct current biasing is less than actuation voltage, two cantilever beams can moving grid (6) do not pull down in suspended state, not with gate oxidation
During layer (4) contact, MOSFET cut-offs, gate capacitance is smaller, can effectively reduce leakage current, reduces power consumption；
When only cantilever beam can moving grid (6) drop-down, another cantilever beam can moving grid (6) when being in suspended state, drop-down
Cantilever beam can moving grid (6) raceway groove formed below, the cantilever beam not being pulled down can moving grid (6) high resistance area formed below, raceway groove with it is high
The structure of resistance area series connection is advantageous to improve MOSFET breakdown reverse voltage, and the cantilever beam being only pulled down can be on moving grid (6)
Gating signal can be amplified by MOSFET, amplified signal selection second port (12) output, reference signal be loaded when only having
Cantilever beam can moving grid (6) drop-down when, reference signal is amplified by MOSFET, second port (12) output reference signal frequency fref
Amplified signal, when only loading feedback signal cantilever beam can moving grid (6) drop-down when, feedback signal is amplified by MOSFET,
Feedback frequency signal is voltage controlled oscillator output frequency foN result is multiplied by after multiplier：N×fo, second port (12) output
Frequency is N × foAmplified signal.
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| 双栅极场效应管图像中频放大器;听声;《电子技术》;19850401(第3期);7-10页 * |
| 砷化镓双栅场效应管及其在微波电路中的应用;阮德兴;《电讯技术》;19870831;第27卷(第4期);26-28,30页 * |
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