CN104935257B - The double clamped beams of silicon substrate low-leakage current can moving grid frequency multiplier - Google Patents
The double clamped beams of silicon substrate low-leakage current can moving grid frequency multiplier Download PDFInfo
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- CN104935257B CN104935257B CN201510386965.3A CN201510386965A CN104935257B CN 104935257 B CN104935257 B CN 104935257B CN 201510386965 A CN201510386965 A CN 201510386965A CN 104935257 B CN104935257 B CN 104935257B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000003321 amplification Effects 0.000 abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- -1 phosphonium ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
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Abstract
The movable gate MOSFET frequency multiplier of the double clamped beams of silicon substrate low-leakage current of the present invention, by silicon substrate, the enhanced MOSFET of N-type, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil are constituted.MOSFET grid is two clamped beams being suspended on gate oxide, and actuation voltage is designed as MOSFET threshold voltage, by direct current biasing control.Reference signal and feedback signal are carried in two clamped beams can be on moving grid.Two clamped beams can moving grid suspend when not contacted with gate oxide, MOSFET cut-offs can reduce grid leakage current.Two clamped beams can moving grid pull down when being contacted with gate oxide, MOSFET conductings, reference signal is input to MOSFET and realized with feedback signal to be multiplied, and passes through the frequency-doubled signal of external circuitses final output reference frequency.In addition, single clamped beam can be achieved amplification to single gating signal, have circuit multi-functional after moving grid drop-down.Present invention reduction leakage current, volume is smaller, and realizes multi-functional.
Description
Technical field
The present invention proposes the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current, and (metal oxide semiconductor field-effect is brilliant
Body pipe) frequency multiplier, belong to the technical field of microelectromechanical systems.
Background technology
Frequency multiplier is the effect that the frequency of a reference signal is passed through to functional circuit, produces the frequency letter of N times of reference frequency
Number.At present, frequency multiplier is widely used in the fields such as communication, signal transacting.Traditional frequency multiplier exist it is complicated, it is larger-size
Shortcoming.Importantly, the presence of MOSFET element grid leakage current increases the power consumption of circuit in circuit.
By contrast, MEMS technology there is small volume, it is low in energy consumption, cheap, in addition, MEMS fixed beam structures
Development it is also increasingly mature.The purpose of the present invention will exactly propose a kind of silicon substrate low-leakage current double clamped beams movable gate MOSFET times
Frequency device.
The content of the invention
Technical problem:MOSFET structure in traditional circuit, even if would generally also produce certain grid in cut-off state
Leakage current, increases circuit power consumption.With the development of microelectric technique, gate oxide thickness enters one with the diminution of MOSFET sizes
Step is thinning, exacerbates the generation of leakage current.Can moving grid it is an object of the invention to provide a kind of double clamped beams of silicon substrate low-leakage current
MOSFET frequency multipliers.Circuit is set to reduce power consumption, simple in construction, volume diminishes.
Technical scheme：A kind of double clamped beams of silicon substrate low-leakage current of the present invention can moving grid frequency multiplier MOSFET to be grown in
The enhanced MOSFET of N-type on silicon substrate, including source electrode, drain electrode, gate oxide, anchor area, cantilever beam can moving grid, pull down pole plate,
Insulating barrier, through hole, lead, source ground；
MOSFET grid be suspended in two clamped beams on gate oxide can moving grid, anchor area is arranged on gate oxide
Both sides, clamped beam can moving grid be fixed in anchor area, clamped beam can the centre of moving grid be suspended on gate oxide, positioned at silicon substrate
On drop-down pole plate be located between anchor area and gate oxide, drop-down pole plate ground connection, insulating barrier be covered in drop-down pole plate on, direct current
Biasing by high frequency choke coil and anchor area act on clamped beam can on moving grid, clamped beam can the actuation voltage of moving grid be designed as
MOSFET threshold voltage；Lead connects source electrode respectively by through hole, drain electrode；
Drain electrode output has two kinds of different working methods, and one kind is to input low pass filter, LPF through first port
Device output access voltage controlled oscillator, voltage controlled oscillator output accesses divider by the 3rd port, and the output of divider is as anti-
Feedback signal is loaded onto a clamped beam by anchor area can be on moving grid, and it is movable that reference signal is loaded into another clamped beam by anchor area
On grid, another working method of drain electrode output is directly to export amplified signal through second port.
The clamped beam of the frequency multiplier can moving grid drop-down or suspend by direct current biasing control, when two clamped beams can moving grid
Drop-down is realized under the direct current biasing for reaching or surpassing actuation voltage, when being contacted with gate oxide, MOSFET conductings, with reference to letter
Number realized and is multiplied by MOSFET with feedback signal, drain electrode output includes the phase informations of two signals, selects first port defeated
Enter low pass filter, low pass filter filters out HFS, and output includes the DC voltage of phase information, DC voltage input
Voltage controlled oscillator, the signal after the output frequency of voltage controlled oscillator, regulating frequency is adjusted as control voltage and is passed through the 3rd port
Transport to divider, divider output signal is loaded into clamped beam as feedback signal can be on moving grid, the result of looped cycle feedback
It is that feedback signal is equal with the frequency of reference signal, the port output frequency f of voltage controlled oscillator the 4thoFor the N of reference signal frequency
Times：N×fref, realize the frequency multiplication of reference signal；
When direct current biasing is less than actuation voltage, two clamped beams can moving grid do not pull down in suspended state, not with grid oxygen
When changing layer contact, MOSFET cut-offs, gate capacitance is smaller, can effectively reduce leakage current, reduces power consumption；
When only one of which clamped beam can moving grid drop-down, another clamped beam can moving grid when being in suspended state, drop-down is consolidated
Strutbeam can moving grid raceway groove formed below, the clamped beam not being pulled down can moving grid high resistance area formed below, raceway groove connects with high resistance area
Structure be conducive to improving MOSFET breakdown reverse voltage, the gating signal that the clamped beam being only pulled down can be on moving grid can be with
Amplified by MOSFET, amplified signal selection port output, when only loading reference signal clamped beam can moving grid drop-down when, ginseng
Examine signal by MOSFET to amplify, second port output reference signal frequency frefAmplified signal, when only loading feedback signal
Clamped beam can moving grid drop-down when, feedback signal is amplified by MOSFET, feedback frequency signal be voltage controlled oscillator output frequency
foAfter divider divided by N result：fo/ N, second port output frequency is fo/ N amplified signal.
Beneficial effect：The double movable gate MOSFET frequency multipliers of clamped beam of silicon substrate low-leakage current of the present invention have following significant
Advantage：
1st, the disengaging of grid and gate oxide is realized in MOSFET cut-off states as grid using clamped beam, with subtracting
Small circuit leakage current, reduces the advantage of power consumption；
2nd, pull down single clamped beam can moving grid can realize the amplification to single gating signal, make Multifunctional circuit, extend
Its application, another clamped beam not being pulled down can moving grid high resistance area formed below, be conducive to improve MOSFET reversely hit
Wear voltage；
3rd, using MEMS technology so that circuit structure is simplified, volume miniaturization.
Brief description of the drawings
Fig. 1 is the top view of the movable gate MOSFET frequency multiplier of the double clamped beams of silicon substrate low-leakage current of the present invention.
Fig. 2 is the A-A ' of the movable gate MOSFET frequency multiplier of the double clamped beams of Fig. 1 silicon substrates low-leakage currents to profile.
Fig. 3 is the B-B ' of the movable gate MOSFET frequency multiplier of the double clamped beams of Fig. 1 silicon substrates low-leakage currents to profile.
Fig. 4 be Fig. 1 silicon substrates clamped beam can two clamped beams of moving grid low-leakage current MOSFET can raceway groove of moving grid when pulling down
Schematic diagram.
Fig. 5 be Fig. 1 silicon substrates clamped beam can the single clamped beams of moving grid low-leakage current MOSFET can moving grid drop-down when raceway groove show
It is intended to.
Have in figure：Silicon substrate 1, source electrode 2, drain electrode 3, gate oxide 4, anchor area 5, clamped beam can moving grid 6, pull-down electrode 7, absolutely
Edge layer 8, through hole 9, lead 10, first port 11, second port 12, the 3rd port 13, the 4th port 14.
Embodiment
The movable gate MOSFET frequency multiplier of the double clamped beams of silicon substrate low-leakage current of the present invention.It is enhanced including silicon substrate, N-type
MOSFET, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil, wherein MOSFET are grown in silicon lining
On bottom, including source electrode, drain electrode, gate oxide, two clamped beams can moving grids, anchor area, pull-down electrode, insulating barrier.MOSFET grid
Pole is across being suspended in two discrete clamped beams on gate oxide, and gate oxide is connected between source and drain, and anchor area is set
In gate oxide both sides, clamped beam can moving grid by respective anchor area on gate oxide, pull-down electrode is arranged on grid oxygen
Between Hua Cengyumao areas, pull-down electrode ground connection, insulating barrier is covered on pull-down electrode.
Reference signal and feedback signal are carried in two clamped beams respectively can be on moving grid, and direct current biasing passes through high frequency choke coil
Acting on clamped beam with anchor area can be on moving grid.
Clamped beam can the actuation voltage of moving grid be designed as MOSFET threshold voltage.When direct current biasing be less than actuation voltage,
Two clamped beams can moving grid when being suspended on gate oxide, MOSFET cut-offs, because grid is not contacted with gate oxide, grid electricity
Appearance is smaller, can effectively reduce grid leakage current, reduces power consumption.
When two clamped beams can moving grid by reach or surpass actuation voltage direct current biasing pull down, connect with gate oxide
When touching, MOSFET conductings, reference signal is multiplied with feedback signal by MOSFET.Drain electrode output signal contain reference signal and
Phase information between feedback signal.Low pass filter filters out the high fdrequency component in this signal, and defeated to voltage controlled oscillator
A direct-current control voltage is sent, voltage controlled oscillator output frequency is adjusted.Voltage controlled oscillator output signal passes through after divider,
1/N change occurs for correspondence in frequency, and as feedback signal, re-enters MOSFET, by the effect of cycle of phase-locked loop, instead
Feedback signal and the reference signal lock-out state that to reach frequency consistent.The signal frequency of final voltage controlled oscillator output is reference frequency
N times, realize to the frequency multiplication of reference signal.
When only one of which clamped beam can moving grid be pulled down when, the clamped beam can moving grid raceway groove formed below, another not by
The clamped beam of drop-down can be high resistance area below moving grid, and the structure that raceway groove and high resistance area are connected can effectively improve the reverse of MOSFET
Breakdown voltage.Only select drop-down clamped beam can be on moving grid gating signal can be amplified by MOSFET and export so that logical
Cross to a clamped beam can moving grid independent control, realize to the frequency processings of individual signals, expand the application of circuit.
Two kinds of working methods are divided into the output of MOSFET drain electrodes 3, a kind of to access low pass filter by first port 11, low
Bandpass filter output access voltage controlled oscillator, voltage controlled oscillator output accesses divider through the 3rd port 13, and divider output is made
Being loaded into a clamped beam by anchor area 5 for feedback signal can be on moving grid 6, and reference signal is loaded into another by anchor area 5 and consolidated
Strutbeam can be on moving grid 6.Another working method of the output of MOSFET drain electrodes 3 is selection second port 12 directly output amplification letter
Number.
Direct current biasing acts on clamped beam by high frequency choke coil and anchor area 5 can be on moving grid 6, and it is straight that high frequency choke coil plays friendship
The effect that stream is separated.Clamped beam can the actuation voltage of moving grid 6 be set to MOSFET threshold voltage.When direct current biasing is less than drop-down
Voltage, two clamped beams can moving grid 6 suspend when not contacted with gate oxide, MOSFET cut-offs, gate capacitance is compared to traditional
MOSFET is smaller, can effectively reduce leakage current, reduces power consumption.
When direct current biasing reaches or surpasses actuation voltage, two clamped beams can moving grid 6 pull down and contacted with gate oxide 4
When, raceway groove is formed, as shown in figure 4, MOSFET is turned on, and reference signal is realized with feedback signal by MOSFET to be multiplied, and drain electrode 3 is defeated
Go out to contain phase information between two signals, selection port 11 is transferred to low pass filter, low pass filter is by this signal
In high fdrequency component filter out, and convey a DC voltage for including phase information to voltage controlled oscillator, DC voltage can be with
Adopt and be represented by the following formula：
Wherein K is MOSFET gain coefficients, frefFor reference signal frequency, fbackFor feedback frequency signal, φ is intrinsic phase
Potential difference.Voltage controlled oscillator adjusts the size of output signal frequency under the control of DC voltage.Voltage controlled oscillator output frequency can
To be expressed by following differential representation formula：
Wherein, foFor voltage controlled oscillator output frequency, KvFor voltage controlled oscillator sensitivity.After divider, output frequency
It is changed into the 1/N of voltage controlled oscillator output frequency, and as feedback signal, re-enters MOSFET.Namely：
Acted on by the feedback cycle of loop, the frequency of feedback signal is final consistent with reference signal.I.e.：
So, the signal frequency that final voltage controlled oscillator port 14 is exported is N times of reference frequency, realizes reference signal
Frequency multiplication.
Only one of which clamped beam can moving grid 6 be pulled down, another clamped beam can moving grid 6 be in suspended state when, drop-down
Clamped beam can the raceway groove formed below of moving grid 6, the clamped beam not being pulled down can the lower section of moving grid 6 be high resistance area, as shown in figure 5, raceway groove
Connected with high resistance area, be conducive to improving MOSFET breakdown reverse voltages.The clamped beam only pulled down can be on moving grid 6 gating signal
It can be amplified by MOSFET, amplified signal selection port 12 is exported.When the clamped beam of only loading reference signal can be under moving grid 6
During drawing, reference signal is amplified by MOSFET, the output reference frequency f of port 12refAmplified signal.Feedback letter is loaded when only having
Number clamped beam can moving grid 6 pull down when, feedback frequency signal be pressuring controlling oscillator frequency foResult after divider, i.e. fo/
N, the output frequency of port 12 is fo/ N amplified signal.So as to by a clamped beam can moving grid 6 independent control, realize pair
The amplification of individual signals, circuit has multi-functional, expands the application of circuit.
The preparation method of the frequency multiplier based on the movable gate MOSFET of clamped beam of the present invention is as follows：
1) p-type Si substrates are prepared；
2) bottom oxide growth
3) deposited silicon nitride；
4) photoetching, etch silicon nitride formation MOSFET source and drain electrode；
5) field is aoxidized；
6) silicon nitride and basal oxygen sheet are removed；
7) progress gate oxidation, adjusting threshold voltage, it is enhanced to make MOSFET；
8) deposit polycrystalline silicon, and photoetching, retain the polysilicon of the anchor zone position of clamped beam；
9) plating evaporation growth Al；
10) photoresist is coated, retains the photoresist above pull-down electrode；
11) Al is anti-carved, pull-down electrode is formed；
12) deposition insulating layer, the Si that 0.1 μm of epitaxial growthxN1-xInsulating barrier；
13) photoetching window, etches away unnecessary SixN1-x：
14) photoresist is coated, retains the insulating barrier of pull-down electrode；
15) reactive ion etching is utilized, the silicon nitride medium layer formed in pull-down electrode；
16) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retaining clamped beam can be below moving grid
Sacrifice layer；
17) plating evaporation growth Al；
18) photoresist is coated, retains the photoresist above clamped beam；
19) Al is anti-carved, forming clamped beam can moving grid；
20) photoresist is coated, photoetching hand-hole injects N+ phosphonium ions, forms MOSFET source and drain electrode；
21) through hole and lead are made, photoresist is coated, the photoresist of source-drain electrode contact zone is removed, gold germanium is evaporated in vacuo
Ni au, is peeled off, alloying formation Ohmic contact；
22) PMGI sacrifice layers are discharged, the clamped beam suspended is formed；
23) MOSFET of preparation is connected with external circuit, constitutes frequency multiplier.
Distinguish whether be the structure standard it is as follows：
The silicon substrate low-leakage current movable gate MOSFET frequency multiplier of double clamped beams of the present invention is using two clamped beam conducts
MOSFET grid, and respectively as the input of reference signal and feedback signal.Clamped beam can moving grid by direct current biasing control,
Actuation voltage is designed as MOSFET threshold voltage, when two clamped beams can moving grid do not pull down and be suspended on gate oxide
When, MOSFET cut-offs can reduce grid leakage current, reduce power consumption.When two clamped beams can moving grid pull down and gate oxide
During contact, reference signal is multiplied with feedback signal by MOSFET, and drain electrode output includes phase information, by LPF
The frequency-doubled signal of N times of reference signal frequency is obtained after device, voltage controlled oscillator, divider feedback cycle.In addition, two clamped beams can
Moving grid can be controlled individually, the clamped beam of drop-down can moving grid raceway groove formed below, another clamped beam not being pulled down can moving grid
High resistance area formed below, is conducive to increasing breakdown reverse voltage, and realizes the amplification to single gating signal, realizes many of circuit
Feature.
Claims (2)
1. a kind of double clamped beams of silicon substrate low-leakage current can moving grid frequency multiplier, it is characterised in that the MOSFET of the frequency multiplier is is grown in
The enhanced MOSFET of N-type on silicon substrate (1), including source electrode (2), drain (3), gate oxide (4), anchor area (5), and cantilever beam can
Moving grid (6), drop-down pole plate (7), insulating barrier (8), through hole (9), lead (10), source electrode (2) ground connection；
MOSFET grid be suspended in two clamped beams on gate oxide (4) can moving grid (6), anchor area (5) are arranged on grid
Oxide layer (4) both sides, clamped beam can moving grid (6) be fixed in anchor area (5), clamped beam can the centre of moving grid (6) be suspended in grid oxygen
Change on layer (4), the drop-down pole plate (7) on silicon substrate (1) is located between anchor area (5) and gate oxide (4), pull down pole plate
(7) it is grounded, insulating barrier (8) is covered on drop-down pole plate (7), and direct current biasing is acted on by high frequency choke coil and anchor area (5)
Clamped beam can on moving grid (6), clamped beam can the actuation voltage of moving grid (6) be designed as MOSFET threshold voltage；Lead (10) leads to
Cross through hole (9) and connect source electrode (2) respectively, drain (3)；
Drain electrode (3) output has two kinds of different working methods, and one kind is to input low pass filter, low pass filtered through first port (11)
Ripple device output access voltage controlled oscillator, voltage controlled oscillator output accesses divider, the output of divider by the 3rd port (13)
Being loaded onto a clamped beam by anchor area (5) as feedback signal can be on moving grid (6), and reference signal is loaded into by anchor area (5)
Another clamped beam can be on moving grid (6), and another working method of drain electrode (3) output is put through second port (12) directly output
Big signal；
When direct current biasing is less than actuation voltage, two clamped beams can moving grid (6) do not pull down in suspended state, not with gate oxidation
During layer (4) contact, MOSFET cut-offs, gate capacitance is smaller relative to traditional MOSFET electric capacity, can effectively reduce leakage current,
Reduce power consumption.
2. a kind of double clamped beams of silicon substrate low-leakage current according to claim 1 can moving grid frequency multiplier, it is characterised in that this times
The clamped beam of frequency device can moving grid (6) drop-down or suspend by direct current biasing control, when two clamped beams can moving grid (6) up to
Arrive or more than drop-down is realized under the direct current biasing of actuation voltage, when being contacted with gate oxide (4), MOSFET is turned on, reference signal
Realized and be multiplied by MOSFET with feedback signal, drain electrode (3) output includes the phase information of two signals, selects first port
(11) low pass filter is inputted, low pass filter filters out HFS, and output includes the DC voltage of phase information, direct current
Pressure input voltage controlled oscillator, the signal after the output frequency of voltage controlled oscillator, regulating frequency is adjusted as control voltage through the 3rd
Port (13) is transmitted to divider, and divider output signal is loaded into clamped beam as feedback signal can be on moving grid (6), and loop is followed
The result of ring feedback is that feedback signal is equal with the frequency of reference signal, voltage controlled oscillator the 4th port (14) output frequency foFor
N times of reference signal frequency：N×fref, realize the frequency multiplication of reference signal；
When only one of which clamped beam can moving grid (6) drop-down, another clamped beam can moving grid (6) be in suspended state when, drop-down
Clamped beam can moving grid (6) raceway groove formed below, the clamped beam not being pulled down can moving grid (6) high resistance area formed below, raceway groove with it is high
The structure of resistance area series connection is conducive to improving MOSFET breakdown reverse voltage, and the clamped beam being only pulled down can be on moving grid (6)
Gating signal can be amplified by MOSFET, amplified signal selection port (12) output, and the clamped of reference signal is loaded when only having
Beam can moving grid (6) drop-down when, reference signal is amplified by MOSFET, second port (12) output reference signal frequency frefPut
Big signal, when only loading feedback signal clamped beam can moving grid (6) drop-down when, feedback signal is amplified by MOSFET, feedback
Signal frequency is voltage controlled oscillator output frequency foAfter divider divided by N result：fo/ N, second port (12) output frequency
For fo/ N amplified signal.
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