CN104935330B - GaAs base low-leakage current double cantilever beam switchs double grid phase-locked loop circuit - Google Patents
GaAs base low-leakage current double cantilever beam switchs double grid phase-locked loop circuit Download PDFInfo
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Abstract
The GaAs base low-leakage current double cantilever beam switch double grid HEMT phase-locked loop circuits of the present invention, by GaAs substrates, enhanced HEMT, and external low pass filter, voltage controlled oscillator, high frequency choke coil are constituted.Cantilever switch is by direct current biasing control, and actuation voltage is designed as HEMT threshold voltage.When two cantilever switch suspend disconnection, gate voltage is 0, HEMT cut-offs, can reduce grid leakage current, reduces power consumption.When two cantilever switch cross direct current biasing drop-down closure, gate voltage is direct current biasing, forms Two-dimensional electron gas channel, HEMT is turned on, reference signal is multiplied with feedback signal by HEMT, the drain electrode low-pass filtered device of output signal and voltage controlled oscillator circulation feedback effect, is finally reached locking.During only one of which cantilever switch drop-down closure, the amplification to individual signals can be achieved, there is circuit multi-functional.The present invention improves efficiency, reduces power consumption, volume is smaller, and realizes multi-functional.
Description
Technical field
The present invention proposes GaAs base low-leakage currents double cantilever beam switch double grid HEMT phase-locked loop circuits, belongs to microelectronics machine
The technical field of tool system.
Background technology
Phaselocked loop realizes the tracking to reference signal frequency and phase using feedback control principle, is widely used in channel radio
The various fields such as letter, radar, DTV, broadcast.MOSFET element in conventional phase-lock loop circuit, by contrast, high electronics
Mobility transistor HEMT has more significant advantage than silicon substrate MOSFET, such as：Electron drift velocity is fast, efficiency high, power consumption
Low advantage.In addition, MEMS technology is simple in construction because of its, small volume also receives much concern the advantages of low in energy consumption, MEMS beam structure
Facilitate controllable, be advantageously implemented the multi-functional of circuit.
The purpose of the present invention will exactly propose a kind of GaAs bases low-leakage current double cantilever beam switch double grid HEMT phaselocked loop electricity
Road.
The content of the invention
Technical problem:The purpose of the present invention is to propose to a kind of GaAs bases low-leakage current double cantilever beam switch double grid HEMT lock phases
Loop circuit, two cantilever beam formation paralleling switch structures are corresponded with two grids, control HEMT conducting and the biography of signal
It is defeated.
Technical scheme：A kind of GaAs base low-leakage current double cantilever beam of the present invention switchs the HEMT of double grid phase-locked loop circuit
It is to grow enhanced HEMT on gaas substrates, including intrinsic GaAs layers, intrinsic AlGaAs layers, N+AlGaAs layers, source electrode, leakage
Pole, grid, anchor area, cantilever switch pulls down pole plate, insulating barrier, through hole, lead；Be on GaAs substrates it is intrinsic GaAs layers, it is intrinsic
It is intrinsic AlGaAs layers on GaAs layers, is N+AlGaAs layers on intrinsic AlGaAs layers, source electrode, drain electrode is located at the two of grid respectively
Side, source ground；Two grids on N+AlGaAs layers are set up in parallel, and one end of two cantilever switch is fixed on anchor area
On, the other end of two cantilever switch is suspended on two grids respectively, and drop-down pole plate is located at below cantilever switch end,
Pole plate ground connection is pulled down, insulating barrier is arranged on drop-down pole plate, and direct current biasing acts on cantilever by high frequency choke coil and anchor area
On beam switch, the actuation voltage of cantilever switch is designed as HEMT threshold voltage；
Two kinds of working methods may be selected in the output signal that drains, and one kind is selection first port connection low pass filter, low pass
The output connection voltage controlled oscillator of wave filter, the output of voltage controlled oscillator selects the 3rd port to add as feedback signal by anchor area
It is loaded on a cantilever switch, reference signal is loaded on another cantilever switch by anchor area, drain electrode output signal
Another working method is that selection second port directly exports amplified signal.
In described phase-locked loop circuit, when direct current biasing is less than actuation voltage, cantilever switch, which is in suspend, disconnects shape
State, not with gate contact, gate voltage is 0, and heterojunction boundary does not have Two-dimensional electron gas channel, and HEMT is in cut-off state, can
Reduce grid leakage current, reduce power consumption；
When direct current biasing reaches or more than actuation voltage, and two cantilever switch pull down closure with gate contact,
In the presence of gate voltage, two-dimensional electron gas raceway groove is formed, and HEMT conductings, reference signal is multiplied with feedback signal by HEMT,
Drain electrode output includes the phase information of two signals, and selection first port input low pass filter, low pass filter filters out high frequency
Part, exports a DC voltage relevant with phase difference, and DC voltage input voltage controlled oscillator adjusts the output of voltage controlled oscillator
Frequency, voltage controlled oscillator output is loaded on cantilever switch as feedback signal letter, until feedback signal reaches with reference signal
Identical to frequency, the lock-out state of constant phase difference, the port output frequency of voltage controlled oscillator the 4th is reference signal frequency fref；
When only one of which cantilever switch drop-down with corresponding gate contact, another cantilever switch suspend disconnection not with
During corresponding gate contact, the cantilever switch Two-dimensional electron gas channel formed below of closure, the cantilever switch lower section of disconnection
High resistance area is formed, the structure that raceway groove is connected with high resistance area is conducive to improving HEMT breakdown reverse voltage, the cantilever only closed
Gating signal on beam switch can be amplified by HEMT, amplified signal selection second port output, when loading reference signal
When cantilever switch is closed, second port output frequency is reference signal frequency frefAmplified signal, when loading feedback signal
When cantilever switch is closed, feedback frequency signal is equal to the output frequency f of voltage controlled oscillatoro, second port output frequency is fo's
Amplified signal, the cantilever switch of disconnection is conducive to reducing grid leakage current, reduces power consumption.
Beneficial effect：In the GaAs base low-leakage currents double cantilever beam switch double grid HEMT phase-locked loop circuits of the present invention,
MEMS technology is combined with HEMT, improves circuit efficiency, and lower power consumption is simple in construction, and volume diminishes；Double cantilever beam switch knot
Structure, by controlling the drop-down and suspension of cantilever beam, controls HEMT conducting, circuit is switched in different working condition；Pass through control
Make single cantilever switch, it is possible to achieve the amplification to individual signals, the cantilever switch that another is not pulled down is formed below
High resistance area, is conducive to improving HEMT breakdown reverse voltage.
Brief description of the drawings
Fig. 1 switchs the top view of double grid HEMT phase-locked loop circuits for the GaAs base low-leakage currents double cantilever beam of the present invention.
Fig. 2 is that Fig. 1 GaAs base low-leakage currents double cantilever beam switchs the A-A ' of double grid HEMT phase-locked loop circuits to profile.
Fig. 3 is that Fig. 1 GaAs base low-leakage currents double cantilever beam switchs the B-B ' of double grid HEMT phase-locked loop circuits to profile.
Fig. 4 is that the raceway groove that Fig. 1 GaAs base low-leakage currents double cantilever beam is switched when two switches of double grid HEMT are closed is illustrated
Figure.
Fig. 5 is raceway groove schematic diagram when Fig. 1 GaAs base low-leakage currents double cantilever beam switchs mono- switch closure of double grid HEMT.
Embodiment
In order to solve the above technical problems, the invention provides a kind of GaAs bases low-leakage current double cantilever beam switch double grid HEMT
Phase-locked loop circuit.Including GaAs substrates, enhanced HEMT, and external low pass filter, voltage controlled oscillator, high frequency choke
Circle, HEMT-structure is followed successively by GaAs substrates from the bottom up, intrinsic GaAs layers, intrinsic AlGaAs layers, N+AlGaAs layers, in addition to source
Pole, drain electrode, grid.Cantilever beam anchor area is located at grid side, and two cantilever beams are across on grid by anchor area.Grid it is another
Drop-down pole plate is provided with below side, the end of cantilever beam, drop-down pole plate is covered by insulating barrier.
Reference signal and feedback signal in phase-locked loop circuit are loaded on two cantilever beams by anchor area respectively.Direct current is inclined
Put and acted on by high frequency choke coil and anchor area on cantilever switch, the suspension of cantilever beam or pull-down state pass through direct current biasing control
System, actuation voltage is designed as HEMT threshold voltage, switch is played a part of in whole circuit.
When direct current biasing is less than actuation voltage, two cantilever switch are in suspension off-state, not with gate contact
When, grid voltage is 0, for enhanced HEMT, Schottky barrier be deep into it is intrinsic GaAs layers, intrinsic GaAs layers with it is intrinsic
The two-dimensional electron gas of AlGaAs layers of heterogeneous junction boundary is depleted, so HEMT can not be turned on, the signal on cantilever switch can not
Transmission.
When direct current biasing reaches or surpasses actuation voltage, and two cantilever switch pull down closure with gate contact, grid
Voltage is the size of direct current biasing, and now Schottky barrier narrows, heterogeneous junction boundary two-dimensional electron gas increase, channel shape
Into HEMT conductings.Drain electrode output is the result that two signals are multiplied through HEMT, contains the phase information between two signals.
Low pass filter is filtered to drain electrode output, and HFS is filtered out, and exports the DC voltage relevant with phase information.Pressure
Controlled oscillator adjusts output frequency, opened as new feedback signal again through cantilever beam in the presence of the DC voltage
Close can moving grid be loaded on HEMT.Until final feedback signal is consistent with the frequency of reference signal, constant phase difference, phaselocked loop is electric
Road completes locking.
When only one of which cantilever switch is pulled down closure and corresponding gate contact, another cantilever switch, which is in, to be disconnected
State not corresponding gate contact when, the switch raceway groove formed below of closure is high resistance area below the switch of disconnection, raceway groove with
The structure of high resistance area series connection can effectively improve HEMT breakdown reverse voltage.Gating letter only on closure cantilever switch
Number it can be amplified by HEMT, drain electrode output amplified signal.So as to pass through the independent control to a cantilever switch, realization pair
The collection and processing of individual signals, expand the application of circuit.
The GaAs base low-leakage currents double cantilever beam switch double grid HEMT phase-locked loop circuits of the present invention include GaAs substrates 1, raw
In enhanced HEMT on gaas substrates, external low pass filter, voltage controlled oscillator, high frequency choke coil.
HEMT-structure includes intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, Yi Jiyuan successively from bottom to up
Pole 5, drain electrode 6, two grids 7, anchor area 8, two cantilever switch 9 pull down pole plate 10, insulating barrier 11, through hole 12, lead 13.
Wherein, source electrode 5 is grounded, and anchor area 8 is arranged on the side of grid 7, and drop-down pole plate 10 is set below the end of cantilever switch 9, cantilever beam
Switch 9 is by respective anchor area across above grid.In HEMT, grid 7 and N+AlGaAs layers of formation Schottky contacts, this
Levy AlGaAs layers and intrinsic GaAs layers formation hetero-junctions.For enhanced HEMT, when gate voltage is 0, Schottky contact barrier consumption
The two-dimensional electron gas of heterojunction boundary has been use up, raceway groove is not turned on.
HEMT drain electrodes 6 can select first port 14 to access low pass filter, low pass filter output access VCO
Device, voltage controlled oscillator output selects the 3rd port 16 to be loaded into by anchor area 8 on a cantilever switch 9 as feedback signal,
Reference signal is loaded on another cantilever switch 9 by anchor area 8.HEMT drain electrodes 6 can also select second port 15 direct
Export amplified signal.
Direct current biasing is acted on cantilever switch 9 by high frequency choke coil and anchor area 8.Direct current biasing is made by anchor area 8
With on cantilever switch.The actuation voltage of cantilever switch is designed as HEMT threshold voltage.
When direct current biasing is insufficient to allow the drop-down of cantilever switch 9 to be contacted with grid 7, switch off, gate voltage is 0, is not had
There is Two-dimensional electron gas channel, HEMT cut-offs can effectively reduce grid leakage current, reduce power consumption.
When direct current biasing reaches or more than actuation voltage, two cantilever switch 9 pull down closure and contacted with grid 7
When, direct current biasing is acted on grid 7, and heterojunction boundary produces Two-dimensional electron gas channel, as shown in figure 4, HEMT is turned on.With reference to
Signal is multiplied with feedback signal by HEMT, and the output of drain electrode 6 includes the phase information between two signals, selects first port 14
Input to low pass filter, low pass filter is filtered to drain electrode output, and HFS is filtered out, output and phase information
Relevant DC voltage.DC voltage can be expressed as：
UL=K cos ((ωref-ωback)t+φ) (1)
Wherein K is HEMT gain coefficients, ωrefOn the basis of signal angular frequency, ωbackFor feedback signal angular frequency, φ is solid
There is phase difference.The output frequency of DC voltage regulation voltage controlled oscillator.Voltage controlled oscillator output angular frequency after regulationoCan be with
Expressed by following formula：
Voltage controlled oscillator output is re-loaded on cantilever switch 9 as feedback signal, until final feedback signal and
The frequency of reference signal is consistent, constant phase difference
ωback=ωo=ωref (3)
Phase-locked loop circuit completes locking, and 17 output signal frequencies of the 4th port of voltage controlled oscillator are consistent with reference signal.
When only one of which cantilever switch 9, which is pulled down, to be contacted with correspondence grid 7, under the cantilever switch 9 for pulling down closure
It is square into Two-dimensional electron gas channel, another lower section of cantilever switch 9 disconnected is high resistance area, as shown in figure 5, raceway groove and high resistant
The structure of area's series connection can improve HEMT breakdown reverse voltage.Now, the gating signal on cantilever switch only closed
It can amplify through HEMT, amplified signal is exported from second port 15.When the cantilever switch 9 for loading reference signal is closed, the
The output frequency of Two-port netwerk 15 is reference signal frequency frefAmplified signal, when loading feedback signal cantilever switch 9 close
When, feedback frequency signal is equal to the output frequency f of voltage controlled oscillatoro, the output frequency of second port 15 is reference signal frequency fo's
Amplified signal, by the drop-down to single cantilever switch 9, realizes the amplification to individual signals, circuit has multi-functional.This
Outside, the cantilever switch 9 of disconnection is conducive to reducing grid leakage current, reduces power consumption.
The preparation method of the GaAs base low-leakage currents double cantilever beam switch double grid HEMT phase-locked loop circuits of the present invention is as follows：
1) in semi-insulating p-type GaAs substrates；
2) the intrinsic GaAs layers of about 500nm of epitaxial growth；
3) the intrinsic AlGaAs separation layers about 50nm of epitaxial growth；
4) AlGaAs layers of about 20nm of N+ types are grown, doping concentration is 1 × 1018cm-3, control thickness and doping concentration so that
HEMT pipes are enhanced；
5) N+ type GaAs thickness about 300nm are grown, doping concentration is 3.5 × 1018cm-3；
6) mesa etch isolation active area；
7) grown silicon nitride；
8) photoetching silicon nitride layer, carves source-drain electrode domain, carries out N+ ion implantings, forms source electrode and drain electrode, removes silicon nitride；
9) photoresist is coated, photoetching removes the photoresist of electrode contact locations；
10) it is evaporated in vacuo gold germanium ni au；
11) peel off, alloying formation source, leakage Ohm contact electrode；
12) photoresist is coated, photoetching removes the photoresist of gate location；
13) growth thickness is 0.5 μm of Ti/Pt/Au；
14) metal on photoresist and photoresist is removed, the grid of Schottky contacts is formed；
15) photoresist is coated, the window of lead, drop-down pole plate and cantilever beam anchor area is made by lithography；
16) growth a layer thickness is 0.3 μm of Au；
17) photoresist is removed, lead, drop-down pole plate, the anchor area of cantilever beam is formed；
18) depositing insulating layer, using 0.1 μm of Si of epitaxy technique growthxN1-xInsulating barrier；
19) photoetching removes unnecessary insulating barrier, only retains the insulating barrier above drop-down pole plate；
20) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retains the sacrifice below cantilever beam
Layer；
21) one layer of down payment for being used to electroplate is grown：Ti/Au/Ti is evaporated, seed layer thickness 50/150/30nm is used as；
22) photoresist is coated, the window of cantilever beam, anchor area and connecting line is made by lithography；
23) one layer of gold is electroplated, its thickness is 2 μm；
24) photoresist is removed, while removing the layer gold on photoresist；
25) titanium/gold/titanium is anti-carved, corrodes Seed Layer, cantilever beam and and connecting line is formed；
26) polyimide sacrificial layer is removed, MEMS cantilever beams are discharged；
27) HEMT of preparation is connected with external circuit, constitutes phase-locked loop circuit.
Distinguish whether be the structure standard it is as follows：
The GaAs base low-leakage currents double cantilever beam switch double grid HEMT phase-locked loop circuits of the present invention are made using two cantilever beams
For the switch of control HEMT conductings and signal transmission.The actuation voltage of cantilever switch is designed as HEMT threshold voltage.When
When cantilever switch disconnects, gate voltage is 0, HEMT cut-offs.When two cantilever switch pull down closure, direct current biasing conduct
Gate voltage accesses grid, and two-dimensional electron gas raceway groove is formed, HEMT conductings, and reference signal is multiplied with feedback signal by HEMT, defeated
Go out signal under the circulation feedback effect of low pass filter and voltage controlled oscillator, be finally reached lock-out state.In addition, only one of which
When cantilever switch is closed, high resistance area is formed under another cantilever switch disconnected, HEMT breakdown reverse voltage is improved, this
When, it is possible to achieve the amplification to single gating signal, expand the application of circuit.
Claims (1)
1. a kind of GaAs base low-leakage current double cantilever beam switchs double grid phase-locked loop circuit, it is characterised in that the phase-locked loop circuit
HEMT is the enhanced HEMT being grown on GaAs substrates (1), including intrinsic GaAs layers (2), intrinsic AlGaAs layers (3), N+
AlGaAs layers (4), source electrode (5) drains (6), grid (7), anchor area (8), cantilever switch (9), drop-down pole plate (10), insulating barrier
(11), through hole (12), lead (13)；It on intrinsic GaAs layers (2), intrinsic GaAs layers (2) is intrinsic to be on GaAs substrates (1)
It is N+AlGaAs layers (4) that source electrode (5), drain electrode (6) are respectively positioned at grid (7) on AlGaAs layers (3), intrinsic AlGaAs layers (3)
Both sides, source electrode (5) ground connection；
Two grids (7) on N+AlGaAs layers (4) are set up in parallel, and one end of two cantilever switch (9) is fixed on anchor
In area (8), the other end of two cantilever switch (9) is suspended on two grids (7) respectively, and drop-down pole plate (10) is located at cantilever
Below beam switch (9) end, drop-down pole plate (10) ground connection, insulating barrier (11) is arranged on drop-down pole plate (10), direct current biasing
Acted on by high frequency choke coil and anchor area (8) on cantilever switch (9), the actuation voltage of cantilever switch (9) is designed as
HEMT threshold voltage；
Two kinds of working methods may be selected in (6) output signal that drains, and one kind is selection first port (14) connection low pass filter, low
The output connection voltage controlled oscillator of bandpass filter, the output of voltage controlled oscillator selects the 3rd port (16) to pass through as feedback signal
Anchor area (8) is carried on a cantilever switch (9), and reference signal is loaded into another cantilever switch (9) by anchor area (8)
On, another working method of drain electrode (6) output signal is that selection second port (15) directly exports amplified signal；
In GaAs base low-leakage current double cantilever beam switch double grid phase-locked loop circuit, when direct current biasing is less than actuation voltage,
Cantilever switch (9) is in suspension off-state, is not contacted with grid (7), gate voltage is 0, and heterojunction boundary is without two dimension electricity
Sub- gas channel, HEMT is in cut-off state, can reduce grid leakage current, reduces power consumption；
When direct current biasing reaches or more than actuation voltage, two cantilever switch (9) pull down closure and contacted with grid (7)
When, in the presence of gate voltage, two-dimensional electron gas raceway groove is formed, and HEMT conductings, reference signal passes through HEMT phases with feedback signal
Multiply, drain electrode (6) output includes the phase information of two signals, selection first port (14) input low pass filter, LPF
Device filters out HFS, exports a DC voltage relevant with phase difference, and DC voltage input voltage controlled oscillator adjusts voltage-controlled shake
The output frequency of device is swung, voltage controlled oscillator output is loaded on cantilever switch (9) as feedback signal letter, until feedback signal
Reach that frequency is identical with reference signal, the lock-out state of constant phase difference, voltage controlled oscillator the 4th port (17) output frequency is
Reference signal frequency fref；
When only one of which cantilever switch (9) drop-down is contacted with corresponding grid (7), another cantilever switch (9) suspends disconnected
Open when not contacted with corresponding grid (7), cantilever switch (9) the Two-dimensional electron gas channel formed below of closure, disconnection it is outstanding
Arm beam switchs (9) high resistance area formed below, and the structure that raceway groove is connected with high resistance area is conducive to improving HEMT breakdown reverse voltage,
The gating signal on cantilever switch (9) only closed can be amplified by HEMT, amplified signal selection second port (15)
Output, when loading cantilever switch (9) closure of reference signal, second port (15) output frequency is reference signal frequency
frefAmplified signal, when load feedback signal cantilever switch (9) closure when, feedback frequency signal be equal to voltage controlled oscillator
Output frequency fo, second port (15) output frequency is foAmplified signal, the cantilever switch (9) of disconnection is conducive to reducing
Grid leakage current, reduces power consumption.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
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| KR100465235B1 (en) * | 2002-04-16 | 2005-01-13 | 삼성전자주식회사 | RF power sensor capable of sensing power of RF signal using capacitance |
| EP1825560A4 (en) * | 2004-11-20 | 2010-09-15 | Kenneth E Salsman | Device for emission of high frequency signals |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
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| 双栅极场效应管图像中频放大器;听声;《电子技术》;19850401(第3期);7-10页 * |
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