CN105141288B - Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate - Google Patents
Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate Download PDFInfo
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- CN105141288B CN105141288B CN201510379200.7A CN201510379200A CN105141288B CN 105141288 B CN105141288 B CN 105141288B CN 201510379200 A CN201510379200 A CN 201510379200A CN 105141288 B CN105141288 B CN 105141288B
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Abstract
The rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate of the present invention is made up of direct current biasing source, pull-up resistor, GaAs base low-leakage currents double cantilever beam switch HEMT, input of two cantilever beams of symmetric design as signal above HMET grids, respectively there is a pull-down electrode below cantilever beam, the silicon nitride medium layer of one layer of insulation is covered with pull-down electrode.When two inputs of HMET are low level, cantilever beam is depleted layer blocking all in suspended state, now HEMT raceway groove, and drain electrode output is high level；When at least one input is high level, cantilever beam corresponding to high level is pulled down, and now HEMT raceway groove is in the conduction state, and drain electrode output is low level, it is achieved thereby that nor gate logic function.Rest-set flip-flop is finally formed based on the GaAs base low-leakage currents double cantilever beam switch HEMT OR-NOT circuits realized by two.
Description
Technical field
The present invention is proposed based on GaAs (GaAs) base low-leakage current double cantilever beam switch HEMT (high electron mobility crystalline substances
Body pipe) nor gate rest-set flip-flop, belong to the technical field of MEMS (microelectromechanical systems).
Background technology
Trigger is a kind of elementary cell in digital circuit, and wherein rest-set flip-flop is to form other various functions triggers
Element.Flip-flop element common at present is manufactured using silicon substrate COMS techniques, applied to various sequential electricity
Lu Zhong.However, as the requirement of speed and power consumption to integrated circuit more comes also high, GaAs based hemts are shown as circuit devcie
Go out certain superiority.Compared with silicon materials, GaAs materials possess carrier mobility height, substrate is semi-insulating and forbidden band is wider
Etc. feature, therefore the device made of it has the advantages that frequency is high, speed is fast, capability of resistance to radiation is strong.GaAs based hemts are with two
Dimensional electron gas are conductive channel, and electron mobility is higher compared to common GaAs devices, is led suitable for low power consumption digital integrated circuit
Domain.In recent years, with the fast development of MEMS technology, have to girder construction and compare in-depth study and understanding, make base of the present invention
Become possibility in the rest-set flip-flop of GaAs base low-leakage currents double cantilever beam switch HEMT nor gates.
The content of the invention
Technical problem:It is an object of the invention to provide one kind based on GaAs base low-leakage currents double cantilever beam switch HEMT or non-
The rest-set flip-flop of door, two cantilever beams are in the top of HEMT gate pole, equivalent to switch, as the input of signal, by double outstanding
Arm girder construction HEMT realizes nor gate function, is finally combined into rest-set flip-flop by two nor gates, circuit structure is simplified, and is made
Number of transistors is reduced, while also reduces circuit power consumption.
Technical scheme：The rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate of the present invention is with half
Insulating GaAs substrate is substrate, and intrinsic GaAs layers, intrinsic AlGaAs layers, N are provided with half-insulating GaAs substrate+AlGaAs layers,
Source region, drain region, gate metal layer and cantilever beam；Cantilever material is Au, and its one end is fixed in anchor area, anchor area and input lead
It is connected, the input as signal；Respectively there are a gate metal layer and pull-down electrode, pull-down electrode to connect in the lower section of cantilever beam
Ground, the silicon nitride medium layer of one layer of insulation of covering, source region, drain region are located at the two of gate metal layer respectively above pull-down electrode
Side, described drain electrode are connected with pull-up resistor, source ground, not with two other input lead being connected that drains respectively as RS
The R ports and S ports of trigger, realize nor gate logic function；The actuation voltage of cantilever beam is arranged to HEMT threshold voltage；
The two-dimensional electron gas passage that the hetero-junctions of intrinsic GaAs layers and intrinsic AlGaAs interlayers is formed, quilt when cantilever beam is in suspended state
The depletion region of Schottky contacts blocks, and when application bias voltage pulls down cantilever beam, the depletion region of Schottky contacts narrows, and two
Dimensional electron gas passage is in the conduction state.
The input lead of two cantilever beams all input low level when, cantilever beam is in suspended state, due to Two-dimensional electron channeling
Road is depleted layer blocking, and drain electrode output is high level；When input high level on the input lead of at least one cantilever beam, input
The cantilever beam of high level is pulled down, and HMET Two-dimensional electron gas channel is on state, and drain electrode output is low level, due to not having
Grid leakage current so that the power consumption in circuit is effectively reduced.
Beneficial effect：
The present invention has advantages below relative to existing rest-set flip-flop：
1. the present invention uses HEMT, there is cut-off frequency height, operating rate is fast, short-channel effect is small and noiseproof feature is good
Advantage；
2. the present invention switchs HEMT by double cantilever beam and realizes nor gate, simple in construction, reduce the quantity of transistor, drop
Low cost；
3. the present invention is due to using cantilever beam structure, making rest-set flip-flop leakage current reduction when cantilever beam be in suspended state,
So as to significantly reduce power consumption；
4. for the present invention by using cantilever beam structure, HMET turn-on and turn-off difference is obvious, effectively reduces RS and touches
Send out the logic error of device.
Brief description of the drawings
Fig. 1 is the rest-set flip-flop top view that the present invention switchs HEMT nor gates based on GaAs base low-leakage currents double cantilever beam,
Fig. 2 be GaAs bases low-leakage current double cantilever beam of the present invention switch HEMT P-P ' to profile,
Fig. 3 be GaAs bases low-leakage current double cantilever beam of the present invention switch HEMT A-A ' to profile,
Fig. 4 is that GaAs base low-leakage currents double cantilever beam switchs raceway groove schematic diagrames of the HEMT when cantilever beam pulls down,
Figure includes：Half-insulating GaAs substrate 1, intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, grid gold
Category layer 5, pull-down electrode 6, silicon nitride medium layer 7, cantilever beam anchor area 8, input lead 9, pull-down electrode lead 10, press welding block 11,
Cantilever beam 12, source electrode 13, drain electrode 14, active area fairlead 15, active area lead 16, pull-up resistor 17.
Embodiment
The embodiment of the present invention is described further below in conjunction with the accompanying drawings.
Referring to Fig. 1-4, the present invention proposes a kind of based on GaAs base low-leakage currents double cantilever beam switch HEMT nor gates
Rest-set flip-flop.Trigger mainly includes：Direct current biasing source, pull-up resistor 17, GaAs base low-leakage currents double cantilever beam switch HEMT.
GaAs base low-leakage currents double cantilever beam switchs HEMT, for realizing nor gate logic function.Select semi-insulated
GaAs is as substrate 1, on substrate 1 containing intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, source electrode 13, drain electrode
14th, gate metal layer 5 and two cantilever beams 12.Cantilever beam 12 across above Liang Gemao areas 8, functions as switch respectively,
Anchor area be connected with input lead 9 be connected, respectively there is a pull-down electrode 6 lower section of cantilever beam 12, and pull-down electrode 6 is grounded, drop-down electricity
One layer of silicon nitride medium layer 7 is covered on pole 6.Hetero-junctions between intrinsic GaAs layers 2 and intrinsic AlGaAs layers 3 forms Two-dimensional electron
Gas passage, HEMT is enhanced, due to gate metal layer 5 and N when cantilever beam 12 is in suspended state+AlGaAs layers 4 form Xiao Te
Base contacts, and its depletion region can block two-dimensional electron gas passage；The actuation voltage of cantilever beam 12 is set to be equal to HEMT threshold voltage,
When cantilever beam 12 is in pull-down state, corresponding Schottky contacts depletion region narrows, and two-dimensional electron gas is in the conduction state.
GaAs base low-leakage currents double cantilever beam switch HEMT drain electrode 14 is connected with pull-up resistor 17, and source electrode 13 is grounded, group
Into OR-NOT circuit.When input lead all input low levels of two cantilever beams 12, cantilever beam 12 is in suspended state, due to
Two-dimensional electron gas channel is depleted layer blocking, and the output of drain electrode 14 is high level.When on the input lead 9 of at least one cantilever beam 12
During input high level, the cantilever beam 12 of input high level is pulled down, and HMET Two-dimensional electron gas channel is on state, drain electrode 14
Export as low level.Truth table is corresponded to such as based on the GaAs base low-leakage currents double cantilever beam switch HEMT NAND gate circuits realized
Under：
Rest-set flip-flop is combined by two OR-NOT circuits, each of which GaAs base low-leakage currents double cantilever beam switch
HEMT drain electrode 14 is connected on another GaAs base low-leakage currents double cantilever beam switch HEMT input lead 9, and HEMT is not
R ports and S ports with two other input lead 9 that drain electrode 14 is connected respectively as rest-set flip-flop.Triggered for RS on the left side
The S ports of device, the R ports for rest-set flip-flop on the right, the drain electrode 14 on the corresponding left side is rest-set flip-flop output port Q, the right
Drain electrode 14 is that rest-set flip-flop output port Q is non-.When the input of R ends is high level, when the input of S ends is low level, Q outputs are high electricity
Flat, Q is non-, and output is low level, and trigger puts 1；When R ends input be low level, S ends input be high level when, Q export be low electricity
Flat, the non-outputs of Q are high level, trigger reset；When RS ends input for low level when, trigger hold mode is constant；RS ends are equal
When effective, flip-flop states are not known.
When the input of cantilever beam is in suspended state for low level, due to no grid leakage current so that in circuit
Power consumption is effectively reduced.
The GaAs base low-leakage currents double cantilever beam switch HEMT preparation methods of the present invention are as follows：
1) half-insulating GaAs substrate 1 is prepared；
2) molecular beam epitaxy grows the intrinsic GaAs layers 2 that a layer thickness is 60nm；
3) molecular beam epitaxy grows the intrinsic AlGaAs layers 3 that a layer thickness is 20nm；
4) N that a layer thickness is 20nm is grown+Type AlGaAs layers 4, doping concentration are 1 × 1018cm-3, control thickness is with mixing
Miscellaneous concentration so that HEMT pipes are enhanced；
5) N that a layer thickness is 50nm is grown+Type GaAs layers, doping concentration are 3.5 × 1018cm-3；
6) mesa etch isolation active area；
7) grown silicon nitride；
8) photoetching silicon nitride layer, source and drain areas are carved, carries out phosphorus (P) ion implanting, doping concentration is 3.5 × 1018Cm-3,
Form source region 13 and drain region 14；
9) photoresist is coated, photoetching removes the photoresist of electrode contact locations；
10) it is evaporated in vacuo gold germanium ni au；
11) peel off, alloying forms Ohmic contact；
12) photoresist is coated, photoetching removes the photoresist of the position of HEMT gate pole 5；
13) one layer of Ti/Pt/Au is grown, thickness is 0.5 μm；
14) metal on photoresist and photoresist is removed, forms the gate metal layer 5 of Schottky contacts；
15) photoresist is coated, photoetching removes pull-down electrode 6, pull-down electrode lead 10 and the photoetching of the position of cantilever beam anchor area 8
Glue；
16) first layer gold is evaporated, thickness is 0.3 μm；
17) gold on photoresist and photoresist is removed, forms pull-down electrode 6 and pull-down electrode lead 10, and cantilever
The first layer gold in Liang Mao areas 8；
18) one layer of silicon nitride medium layer 7 is grown, thickness is 0.2 μm；
19) photoresist is coated, retains the photoresist in pull-down electrode 6；
20) reactive ion etching is utilized, the silicon nitride medium layer 7 formed in pull-down electrode 6；
21) deposit and photoetching polyimide sacrificial layer：Coating polyimide sacrifice layer, it is desirable to fill up pit, polyimides
The thickness of sacrifice layer determines the distance between cantilever beam 12 and gate metal layer 5；Photoetching polyimide sacrificial layer, only retains cantilever
The sacrifice layer of the lower section of beam 12；
22) photoresist is coated, photoetching removes cantilever beam 12, input lead 9, cantilever beam anchor area 8, the light of the position of press welding block 11
Photoresist；
23) 500/1500/300A ° of Ti/Au/Ti Seed Layer is evaporated, removes the thickness of re-evaporation one after the Ti layers at top
Spend the layer gold for 2 μm；
24) gold on photoresist and photoresist is removed, forms cantilever beam 12, input lead 9, cantilever beam anchor area 8, pressure welding
Block 11；
25) polyimide sacrificial layer is discharged：Developer solution soak, remove cantilever beam 12 under polyimide sacrificial layer, go from
Sub- water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
Distinguish whether be the structure standard it is as follows：
The rest-set flip-flop based on GaAs base low-leakage currents double cantilever beam switch HEMT nor gates of the present invention, in HEMT gate pole
Top, symmetric design has two cantilever beams, the threshold voltage for being dimensioned to HEMT of its actuation voltage, cantilever beam across
In anchor area, anchor area is connected with input lead, the input as signal.Respectively there is a pull-down electrode below cantilever beam, pull down
The silicon nitride medium layer of one layer of insulation is covered with electrode.GaAs base low-leakage currents double cantilever beam switch HEMT is used for realization or non-
Gate logic, when two inputs of HMET are low level, cantilever beam is depleted layer resistance all in suspended state, now HEMT raceway groove
Disconnected, drain electrode output is high level；When at least one input is high level, cantilever beam corresponding to high level is pulled down, now
HEMT raceway groove is in the conduction state, and drain electrode output is low level.Switched by two based on GaAs base low-leakage currents double cantilever beam
The OR-NOT circuit that HEMT is realized forms rest-set flip-flop.
Meet conditions above structure be considered as the present invention based on GaAs bases low-leakage current cantilever switch HEMT or non-
The rest-set flip-flop of door.
Claims (2)
1. a kind of rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate, it is characterized in that：The RS is triggered
Device for substrate, is provided with intrinsic GaAs layers (2), intrinsic AlGaAs with half-insulating GaAs substrate (1) on half-insulating GaAs substrate (1)
Layer (3), N+AlGaAs layers (4), source electrode (13), drain electrode (14), gate metal layer (5) and cantilever beam (12)；Cantilever beam (12) material
Expect to be fixed in anchor area (8) for Au, its one end, anchor area (8) are connected with input lead (9), the input as signal；In cantilever
Respectively there are a gate metal layer (5) and pull-down electrode (6) in the lower section of beam (12), and pull-down electrode (6) is grounded, pull-down electrode (6)
The silicon nitride medium layer (7) of one layer of insulation is covered above, and source electrode (13), drain electrode (14) are located at the two of gate metal layer (5) respectively
Side, described drain electrode (14) are connected with pull-up resistor (17), source electrode (13) ground connection, and two other not being connected with drain electrode (14) is defeated
Enter R port and S port of the lead (9) respectively as rest-set flip-flop, realize nor gate logic function；The drop-down electricity of cantilever beam (12)
Pressure is arranged to HEMT threshold voltage；The Two-dimensional electron that hetero-junctions between intrinsic GaAs layers (2) and intrinsic AlGaAs layers (3) is formed
Gas passage, cantilever beam are blocked when being in suspended state by the depletion region of Schottky contacts, make cantilever beam applying bias voltage
(12) when pulling down, the depletion region of Schottky contacts narrows, and two-dimensional electron gas passage is in the conduction state.
2. the rest-set flip-flop according to claim 1 based on GaAs base low-leakage current double cantilever beam switch nor gate, its
It is characterized in；The input lead (9) of two cantilever beams (12) all input low level when, cantilever beam (12) is in suspended state, due to two
Dimensional electron gas raceway groove is depleted layer blocking, and drain electrode (14) output is high level；When the input lead of at least one cantilever beam (12)
(9) on during input high level, the cantilever beam (12) of input high level is pulled down, and HMET Two-dimensional electron gas channel is on
State, drain electrode (14) output is low level, due to no grid leakage current so that the power consumption in circuit is effectively reduced.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1921077A (en) * | 2005-08-26 | 2007-02-28 | 中国科学院微电子研究所 | Producing method for GaAs radical enhancing/depletion type fakement matching high electron mobility transistor gate |
| CN101471260A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Gate anneal method suitable for enhancement type InGaP/AlGaAs/InGaAs PHEMT device |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
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| US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
| KR101277445B1 (en) * | 2009-12-11 | 2013-06-27 | 엘지디스플레이 주식회사 | Semiconductor Light Emitting Device and Method for Manufacturing Thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1921077A (en) * | 2005-08-26 | 2007-02-28 | 中国科学院微电子研究所 | Producing method for GaAs radical enhancing/depletion type fakement matching high electron mobility transistor gate |
| CN101471260A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Gate anneal method suitable for enhancement type InGaP/AlGaAs/InGaAs PHEMT device |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
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