CN104967439A - GaN-based low leakage current clamped beam switch field effect transistor NOR gate - Google Patents
GaN-based low leakage current clamped beam switch field effect transistor NOR gate Download PDFInfo
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- CN104967439A CN104967439A CN201510379526.XA CN201510379526A CN104967439A CN 104967439 A CN104967439 A CN 104967439A CN 201510379526 A CN201510379526 A CN 201510379526A CN 104967439 A CN104967439 A CN 104967439A
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Abstract
The invention relates to a GaN-based low leakage current clamped beam switch field effect transistor NOR gate, which is composed of two N-type MESFETs (metal semiconductor field effect transistors) with a clamped beam switch, that is, a first field effect transistor (1) and a second field effect transistor (2), and a load resistor (3), wherein source electrodes of the first field effect transistor (1) and the second field effect transistor (2) are connected and grounded together, drain electrodes of the first field effect transistor (1) and the second field effect transistor (2) are also connected together and connected to a power supply VCC through the resistor (3), a first input signal (A) and a second input signal (B) are inputted on the clamped beam switches (5) of the first field effect transistor (1) and the second field effect transistor (2) through anchor areas (7) respectively, and output signals are outputted between drain electrodes of the first field effect transistor (1) and the second field effect transistor (2) and the load resistor (3). The NOR gate provided by the invention has the significant advantages of small size, easy integration, low power consumption, high switching speed and the like.
Description
Technical field
The present invention proposes gallium nitrate based low-leakage current clamped beam switch MESFET (metal-semiconductor field effect transistor) NOR gate, belong to the technical field of microelectromechanical systems.
Background technology
Microelectric technique has greatly dragged the step that the mankind enter the information age, along with further developing of microelectric technique, the whole world enters the mobile Internet epoch, the thing followed is the requirements at the higher level to wireless communication technology, traditional silicon-based devices cannot meet high frequency, efficient and resistant to elevated temperatures requirement, and therefore various novel device and semi-conducting material are constantly suggested.The transistor of gallium nitride material manufacture has very high electron mobility, very strong capability of resistance to radiation, very large operating temperature range.Gallium nitride field effect transistor can use in high frequency, hyperfrequency integrated circuit.Nowadays the size of transistor is developed to Nano grade, and the integrated level of corresponding lsi unit area is still constantly promoting, and the function of chip is also increasingly sophisticated, presents the state of numerical model analysis, and the processing speed of chip is more and more higher simultaneously; The thing followed is exactly the power problems of integrated circuit, and too high power consumption can make chip overheating, the operating characteristic of transistor can be subject to the impact of temperature and change, so overheated chip temperature not only can make chip service life reduction, and can affect the stability of chip.Development due to battery technology has met with unprecedented technical bottleneck, so find a kind of solution of low-power consumption just to seem very important.
OR-NOT circuit is as the important component part of digital circuit, it can realize the NOR-logic function of the digital signal that two inputs input, because OR-NOT circuit has huge application in the digital circuits such as central processing unit, so just seem very important to the power consumption of OR-NOT circuit and the control of temperature, the NOR gate be made up of conventional MESFET, along with the lifting of integrated level, power consumption becomes more and more serious, the excessive chip overheating problem brought of power consumption can have a strong impact on the performance of integrated circuit, the development of MEMS technology makes to manufacture the MESFET with movable clamped beam switch becomes possibility, the MESFET with movable clamped beam switch effectively can reduce grid leakage current, and then reduce the power consumption of OR-NOT circuit.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate, adopt in NOR gate two traditional MESFET are changed to two MESFET with clamped beam construction of switch, when this NOR gate is in running order, effectively can reduce the grid leakage current of transistor, thus reduce the power consumption of NOR gate.
Technical scheme: gallium nitrate based low-leakage current clamped beam switching field effect transistor NOR gate of the present invention is made up of two N-type MESFET i.e. first field-effect transistors and the second field-effect transistor with clamped beam switch and a load resistance, the source electrode of the first field-effect transistor and the second field-effect transistor is connected together and common ground, drain electrode also links together and jointly meets power supply VCC by resistance, first input signal and the second input signal input on the clamped beam switch of the first field-effect transistor and the second field-effect transistor respectively by anchor district, output signal and export between the drain electrode and load resistance of the first field-effect transistor and the second field-effect transistor, lead-in wire is made up of metal, clamped beam switch relies on the grid being supported and suspended on MESFET in the anchor district at its two ends, this clamped beam switch is made up of titanium/gold/titanium, MESFET is by grid, source electrode and drain electrode are formed, wherein source electrode and drain electrode form ohmic contact by metal and heavy doping N district and form, grid forms Schottky contacts by metal and channel region and forms, anchor district is produced on P type gallium nitride substrate, N-type active area forms source electrode and drain electrode, pull-down electrode is there is between clamped beam switch and P type gallium nitride substrate, pull-down electrode is covered by silicon nitride, pull-down electrode ground connection.
The resistance of described load resistance is set to when wherein any one MESFET conducting, compared to the MESFET of conducting, the resistance of this load resistance can make enough greatly to export for low level, when two MESFET all can not conducting time, compared to the MESFET of cut-off, the enough I of resistance of this load resistance make to export as high level.
The first described field-effect transistor and the clamped beam switch of the second field-effect transistor are suspended on its grid, Schottky contacts is defined between the grid of N-type MESFET and P type gallium nitride substrate, depletion layer is formed in P type gallium nitride substrate square under the gate, the actuation voltage of the clamped beam switch of this N-type MESFET is designed to equal with the threshold voltage of MESFET, when being carried in the voltage between clamped beam switch and pull-down electrode and being greater than the threshold voltage of MESFET, clamped beam switch is drop-down to be close to grid, and the depletion region thickness of N-type MESFET reduces and conducting; When between clamped beam switch and pull-down electrode, institute's making alive is less than the threshold voltage of MESFET, clamped beam switch just can not be drop-down, and its grid does not just exist voltage, so this N-type MESFET just can not conducting, so grid leakage current would not exist, and this reduces the power consumption of NOR gate.
Beneficial effect: the clamped beam switch of the clamped beam switch MESFET in gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate of the present invention is drop-down when contacting with N-type MESFET grid, grid just has voltage to exist, when clamped beam switch is in suspended state, can not effectively conducting, therefore clamped beam switch MESFET can effectively reduce grid leakage current, reduces the power consumption of circuit; And gallium nitrate based MESFET has high electron mobility, the normal requirements of one's work of circuit under high-frequency digital signal can be met.
Accompanying drawing explanation
Fig. 1 is the vertical view of gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate.
Fig. 2 be gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate A-A' to profile.
Fig. 3 be gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate B-B' to profile.
Fig. 4 is the schematic diagram of gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate.
Figure comprises: the first field-effect transistor 1, second field-effect transistor 2, load resistance 3, lead-in wire 4, clamped beam switch 5, grid 6, anchor district 7, N trap 8, N-type active area 9, pull-down electrode 10, P type gallium nitride substrate 11, first input signal A, the second input signal B.
Embodiment
Gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate of the present invention, N-type MESFET i.e. the first field-effect transistor 1 having a clamped beam switch by two and the second field-effect transistor 2 and load resistance 3 form, the source electrode of the first field-effect transistor 1 and the second field-effect transistor 2 is connected together, and common ground, drain electrode also links together, and jointly connect with load resistance 3, resistance under the resistance of this load resistance 3 and the first field-effect transistor 1 and the second field-effect transistor 2 conducting or cut-off state determines the voltage ratio of supply voltage, and then determine to export for high level or low level, load resistance 3 is connected with supply voltage.Two signals input on the clamped beam switch 5 of two N-type MESFET respectively by anchor district 7, output signal and export between the drain electrode and load resistance of these two N-type MESFET, lead-in wire 4 is made up of metal, the clamped beam switch 5 of N-type MESFET relies on the grid 6 being supported and suspended on MESFET in anchor district 7, this clamped beam switch 5 is made up of titanium/gold/titanium, the digital signal of input is connected on clamped beam switch 5, MESFET is by grid 6, source electrode and drain electrode are formed, wherein source electrode and drain electrode form ohmic contact by metal and heavy doping N district and form, grid 6 forms Schottky contacts by metal and channel region and forms, anchor district 7 is produced on P type gallium nitride substrate 11, N-type active area 9 forms source electrode and drain electrode, pull-down electrode 10 is there is between clamped beam switch 5 and P type gallium nitride substrate 11, pull-down electrode 10 is covered by silicon nitride, pull-down electrode 10 ground connection, whole circuit production is on P type gallium nitride substrate 11.
When this NOR gate is in operating conditions, pull-down electrode 10 all ground connection of two N-type MESFET, high level or low level are added on the clamped beam switch 5 of two MESFET by anchor district 7 respectively, the voltage of high level and digital signal " 1 " is enough large, the clamped beam switch 5 of the MESFET being loaded with high level can be made drop-down and conducting, and low level can not make the clamped beam switch 5 of MESFET drop-down, so when all loading low level on the clamped beam switch of two MESFET, two pipes all can not conducting, then export as high level; When wherein any one MESFET or two MESFET loads high level, then export as low level, realize carrying out or non-function input signal, corresponding formula is Y=A+B, and the MESFET in this NOR gate along with input signal its state of change also conducting and turn off between change, when MESFET is in OFF state, its clamped beam switch 5 is just in suspended state, and this just means that the MESFET in this NOR gate does not this moment exist grid leakage current, reduces the power consumption of circuit.The truth table of NOR gate:
| A | B | Y |
| 0 | 0 | 1 |
| 1 | 0 | 0 |
| 0 | 1 | 0 |
| 1 | 1 | 0 |
The preparation method of gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate comprises following step:
1) semi-insulating type P type gallium nitride substrate 11 is prepared;
2) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of N-type MESFET channel region;
3) N-type MESFET Channeling implantation, injects phosphorus, anneals in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region of N-type MESFET;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) photoetched grid 6, removes the photoresist in grid region;
6) electron beam evaporation titanium/platinum/gold;
7) titanium/platinum/gold on remaining photoresist and photoresist is removed;
8) heat, make titanium/platinum/billon and N-type MESFET raceway groove form Schottky contacts;
9) photoresist is applied, photoetching the photoresist of etching N type MESFET source electrode and drain region;
10) N-type light dope is carried out to this region, in the N-type light dope active area 9 that N-type MESFET source electrode and drain region are formed, carry out short annealing process;
11) photoetching source electrode and drain electrode, removes the photoresist of source electrode and drain electrode;
12) vacuum evaporation gold germanium nickel/gold;
13) gold germanium nickel/gold on photoresist and photoresist is removed;
14) alloying forms ohmic contact, forms source electrode and drain electrode;
15) apply photoresist, remove the photoresist of the position, anchor district 7 of power line, ground wire, lead-in wire 4, pull-down electrode 10 and clamped beam switch;
16) evaporate ground floor gold, its thickness is about 0.3 μm;
17) remove the gold on photoresist and photoresist, form the anchor district 7 of power line, ground wire, lead-in wire 4, pull-down electrode 10 and clamped beam switch;
18) deposit one deck
thick silicon nitride;
19) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride in pull-down electrode 10;
20) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer on P type gallium nitride substrate 11, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam switch;
21) evaporate titanium/gold/titanium, its thickness is
22) photoetching: remove and will electroplate local photoresist;
23) electrogilding, its thickness is 2 μm;
24) photoresist is removed: remove and do not need to electroplate local photoresist;
25) anti-carve titanium/gold/titanium, corrosion down payment, forms clamped beam switch 5;
26) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under clamped beam switch 5, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Difference with the prior art of the present invention is
The clamped beam switch of the N-type clamped beam switch MESFET that the NOR gate in the present invention uses is suspended on its grid, Schottky contacts is defined between the grid of N-type MESFET and substrate, depletion layer is formed in substrate square under the gate, the actuation voltage of the clamped beam switch of this N-type MESFET designs equal with the threshold voltage of MESFET, when being carried in the voltage between clamped beam switch and pull-down electrode and being greater than the threshold voltage of MESFET, clamped beam switch is drop-down to be close to grid, the depletion region thickness of N-type MESFET reduces and conducting, realize the NOR-logic to input signal on this basis, when between clamped beam switch and pull-down electrode, institute's making alive is less than the threshold voltage of MESFET, clamped beam switch just can not be drop-down, and its grid does not just exist voltage, so this N-type MESFET just can not conducting, so grid leakage current would not exist, and this reduces the power consumption of NOR gate.
Namely the structure meeting above condition can be considered gallium nitrate based low-leakage current clamped beam switch MESFET NOR gate of the present invention.
Claims (3)
1. a gallium nitrate based low-leakage current clamped beam switching field effect transistor NOR gate, it is characterized in that this NOR gate is made up of two N-type MESFET i.e. first field-effect transistors (1) and the second field-effect transistor (2) with clamped beam switch and a load resistance (3), the source electrode of the first field-effect transistor (1) and the second field-effect transistor (2) is connected together and common ground, drain electrode also links together and jointly meets power supply VCC by resistance (3), first input signal (A) and the second input signal (B) above input respectively by anchor district (7) clamped beam switch (5) at the first field-effect transistor (1) and the second field-effect transistor (2), output signal and export between the drain electrode and load resistance (3) of the first field-effect transistor (1) and the second field-effect transistor (2), lead-in wire (4) is made up of metal, clamped beam switch (5) relies on the grid (6) being supported and suspended on MESFET in the anchor district (7) at its two ends, this clamped beam switch (5) is made up of titanium/gold/titanium, MESFET is by grid (6), source electrode and drain electrode are formed, wherein source electrode and drain electrode form ohmic contact by metal and heavy doping N district and form, grid (6) forms Schottky contacts by metal and channel region and forms, anchor district (7) is produced on P type gallium nitride substrate (11), N-type active area (9) forms source electrode and drain electrode, pull-down electrode (10) is there is between clamped beam switch (5) and P type gallium nitride substrate (11), pull-down electrode (10) is covered by silicon nitride, pull-down electrode (10) ground connection.
2. gallium nitrate based low-leakage current clamped beam switching field effect transistor NOR gate according to claim 1, it is characterized in that the resistance of described load resistance (3) is set to when wherein any one MESFET conducting, compared to the MESFET of conducting, the resistance of this load resistance (3) can make enough greatly to export for low level, when two MESFET all can not conducting time, compared to the MESFET of cut-off, the enough I of resistance of this load resistance (3) make to export as high level.
3. gallium nitrate based low-leakage current clamped beam switching field effect transistor NOR gate according to claim 1, it is characterized in that the clamped beam switch (5) of described the first field-effect transistor (1) and the second field-effect transistor (2) is suspended on its grid (6), Schottky contacts is defined between the grid (6) of N-type MESFET and P type gallium nitride substrate (11), depletion layer is formed in the P type gallium nitride substrate (11) of grid (6) below, the actuation voltage of the clamped beam switch (5) of this N-type MESFET is designed to equal with the threshold voltage of MESFET, when being carried in the voltage between clamped beam switch (5) and pull-down electrode (10) and being greater than the threshold voltage of MESFET, clamped beam switch (5) is drop-down to be close to grid (6), the depletion region thickness of N-type MESFET reduces and conducting, when between clamped beam switch (5) and pull-down electrode (10), institute's making alive is less than the threshold voltage of MESFET, clamped beam switch (5) just can not be drop-down, its grid (6) is upper does not just exist voltage, so this N-type MESFET just can not conducting, so grid leakage current would not exist, and this reduces the power consumption of NOR gate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107089639A (en) * | 2016-02-17 | 2017-08-25 | 格罗方德半导体公司 | Resonance fin field-effect transistor based on MEMS |
| CN109545797A (en) * | 2018-10-17 | 2019-03-29 | 天津大学 | Flexible two-input NOR gate circuit based on flexible substrate |
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| US4635088A (en) * | 1980-03-10 | 1987-01-06 | Nippon Electric Co., Ltd. | High speed-low power consuming IGFET integrated circuit |
| CN102735925A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based frequency detector and detection method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107089639A (en) * | 2016-02-17 | 2017-08-25 | 格罗方德半导体公司 | Resonance fin field-effect transistor based on MEMS |
| CN107089639B (en) * | 2016-02-17 | 2018-10-26 | 格罗方德半导体公司 | Resonance fin field-effect transistor based on MEMS |
| CN109545797A (en) * | 2018-10-17 | 2019-03-29 | 天津大学 | Flexible two-input NOR gate circuit based on flexible substrate |
| CN109545797B (en) * | 2018-10-17 | 2021-11-23 | 天津大学 | Flexible two-input NOR gate circuit based on flexible substrate |
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