CN104935327B - Gallium nitride base low-leakage current double cantilever beam switchs nor gate - Google Patents
Gallium nitride base low-leakage current double cantilever beam switchs nor gate Download PDFInfo
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Abstract
The gallium nitride base low-leakage current double cantilever beam switch nor gate of the present invention replaces tradition MESFET with the MESFET switched with double cantilever beam, wherein, two cantilever switch are suspended on MESFET grid, the position of two cantilever switch is symmetrical on the MESFET source and drain direction, Schottky contacts are formd between MESFET grid and substrate, under the gate depletion layer is formed in square substrate, the actuation voltage of cantilever switch is designed to equal with MESFET threshold voltage, when the voltage loaded between cantilever switch and pull-down electrode is more than MESFET threshold voltage, cantilever beam drop-down is close to turn on MESFET with grid, when institute's making alive is less than N-type MESFET threshold voltage, cantilever switch cannot be pulled down, MESFET is turned off, when nor gate works, when NMOS tube is off, its cantilever switch is at suspended state, reduce grid leakage current, so as to reduce the power consumption of circuit.
Description
Technical field
The present invention proposes GaN (gallium nitride) base low-leakage current double cantilever beam switch MESFET (metals-semiconductcor field effect
Answer transistor) nor gate, belong to the technical field of microelectromechanical systems.
Background technology
With the development of wireless communication technology, the chip of RF IC is also developed rapidly, and collection constantly expands on a large scale,
Working frequency is improved constantly, and traditional silica-base material can not meet requirement.MESFET based on gallium nitride substrate be exactly
Application is suggested under this background, because the good characteristic of gallium nitride material causes the transistor manufactured by it to have very high electricity
Transport factor, very strong capability of resistance to radiation, larger operating temperature range.Because the quantity of transistor in chip is more and more,
The thing followed is exactly the power problemses of integrated circuit.With the development of integrated circuit, the scale of chip becomes very big, people couple
Increasingly pay attention in the power consumption of chip.Too high power consumption can propose higher requirement to the heat sink material of chip, can also make chip
Performance be affected.So, the design for the low-power consumption of device seems more and more important in the design of integrated circuit.
OR-NOT circuit can realize the NOR-logic function for the data signal that two inputs are inputted, nor gate conduct
The important component of digital circuit, there is huge application, so the control to the power consumption and temperature of OR-NOT circuit just shows
Particularly significant, the nor gate being made up of conventional MESFET is obtained, with the lifting of integrated level, power consumption becomes increasingly severe, power consumption
The excessive chip overheating problem brought can have a strong impact on the performance of integrated circuit, and the development of MEMS technology causes manufacture has movable
The MESFET of cantilever switch is possibly realized, and the MESFET with movable cantilever switch can effectively reduce grid leakage current,
And then reduce the power consumption of OR-NOT circuit.
The content of the invention
Technical problem:MESFET nor gates are switched it is an object of the invention to provide a kind of GaN base low-leakage current double cantilever beam,
Used in nor gate two tradition MESFET are changed to a MESFET with double cantilever beam construction of switch, in the nor gate
When in running order, the grid leakage current of crystal can be effectively reduced, so as to reduce the power consumption of nor gate.
Technical scheme：A kind of GaAs base low-leakage current double cantilever beam of the present invention switchs nor gate by with double cantilever beam
N-type MESFET, resistance and power supply composition are switched, double cantilever beam switch MESFET is produced in GaN substrate, the double cantilever beam
The source electrode and drain electrode for switching MESFET are formed Ohmic contact and constituted by metal and heavy doping N areas, and grid is by titanium/platinum/billon and N
Type active layer formation Schottky contacts constitute, left floating above cantilever switch N-type MESFET grid two with titanium/gold/
Leave certain gap to ensure between the cantilever switch for the symmetric design that titanium is made, the suspension end of two cantilever switch
It is not interfere with each other during two cantilever switch drop-downs, the position of two cantilever switch is symmetrical on the MESFET source-drain direction, hangs
The anchor area of arm beam switch is produced on semi-insulating GaN substrate, there is pull-down electrode, drop-down electricity between cantilever switch and substrate
Pole is covered by silicon nitride material, and cantilever switch N-type MESFET pull-down electrode ground connection, the double cantilever beam switchs MESFET source
Pole is grounded, and drain electrode is connected by resistance with power supply VCC, and source electrode and drain electrode are connected with lead respectively, and lead makes of gold, and two-way is defeated
Enter two cantilever switch input that signal i.e. signal A and signal B switch MESFET in double cantilever beam respectively, output signal Y exists
Exported between double cantilever beam switch MESFET drain electrode and resistance, the resistance of resistance is much larger than the impedance that the MESFET is turned on,
So as to ensure to be obtained being output as low level by electric resistance partial pressure when cantilever switch N-type MESFET is turned on.
Two described cantilever switch are being supported and suspended on above grid by anchor area, are formed between grid and substrate
Schottky contacts；The threshold value electricity with N-type MESFET of the actuation voltage design of N-type MESFET two cantilever switch
Pressure is equal, and only when voltage added on N-type MESFET cantilever switch is more than N-type MESFET threshold voltage, it hangs
Arm beam switch could pull down and contact grid so that double cantilever beam switch MESFET is turned on, when institute's making alive is less than N-type
Cantilever switch cannot be pulled down during MESFET threshold voltage, MESFET shut-offs, when nor gate works, as N-type MESFET
Its cantilever switch is at suspended state when being off, and reduces grid leakage current, so as to reduce the power consumption of circuit.
Operationally, two digital signal input ends A and B of the nor gate, as long as it is high level, the high level all the way to have
Input signal is added in double cantilever beam by anchor area and switched on MESFET cantilever switch, and cantilever switch can be made to pull down and connect
Tactile grid make double cantilever beam switch MESFET conducting so that output Y be low level, only when two digital signal input ends all
During for low level, double cantilever beam switch MESFET two cantilever switch can not all be pulled down, and MESFET shut-offs then export Y
For high level, input signal is carried out or non-function so as to realizeDouble cantilever beam switch in the nor gate
MESFET is off its cantilever switch during state and is in suspended state, grid leakage current is reduced, so as to reduce circuit
Power consumption, the truth table of nor gate：
| A | B | Y |
| 0 | 0 | 1 |
| 1 | 0 | 0 |
| 0 | 1 | 0 |
| 1 | 1 | 0 |
Beneficial effect：Double cantilever beam in the GaN base low-leakage current double cantilever beam switch MESFET nor gates of the present invention is opened
When the two cantilever switch drop-down for closing MESFET is in contact with N-type MESFET grids, N-type MESFET conductings.Work as cantilever beam
When institute's making alive is less than MESFET threshold voltage between switch and pull-down electrode, cantilever switch can not be pulled down, N-type MESFET
Turn off, now cantilever switch is in suspended state, reduce grid leakage current to reduce the power consumption of the nor gate.
Brief description of the drawings
Fig. 1 is the top view that GaN base low-leakage current double cantilever beam of the present invention switchs MESFET nor gates,
Fig. 2 be Fig. 1 GaN base low-leakage currents double cantilever beam switch MESFET nor gates P-P ' to profile,
Fig. 3 be Fig. 1 GaN base low-leakage currents double cantilever beam switch MESFET nor gates A-A ' to profile,
Figure includes：Double cantilever beam switchs N-type MESFET1, resistance 2, semi-insulating GaN substrate 3, lead 4, grid 5, cantilever
Beam switch 6, anchor area 7, pull-down electrode plate 8, silicon nitride layer 9, source electrode 10, N-type active layer 11, drain electrode 12.
Embodiment
The GaN base low-leakage current double cantilever beam switch MESFET nor gates of the present invention switch N-type by a double cantilever beam
MESFET and resistance composition, the GaN base low-leakage current double cantilever beam switchs MESFET source ground, two-way input signal
It is connected on respectively on two cantilever switch of the MESFET, drain electrode is connected with resistance and is connected together with power supply, and output signal exists
Exported between drain electrode and resistance, the resistance is much larger than MESFET conduction impedances so as to be output as low level when MESFET is turned on.
The source electrode of the MESFET and drain electrode are formed Ohmic contact and constituted by metal and heavy doping N areas, and grid is by titanium/platinum/billon and N-type
Active layer formation Schottky contacts are constituted, and two are left floating above cantilever switch N-type MESFET grid with titanium/gold/titanium
The cantilever switch for the symmetric design being made, the suspension end of two cantilever switch leaves certain gap to ensure that two hang
It is not interfere with each other during the switch drop-down of arm beam, the position of two cantilever switch is symmetrical on N-type MESFET source-drain direction.Exchange
Signal loading is on two cantilever switch, and the anchor area of cantilever switch is produced on semi-insulating GaN substrate, in cantilever switch
There is pull-down electrode between substrate, pull-down electrode is covered by silicon nitride material, cantilever switch N-type MESFET pull-down electrode
Ground connection.
Double cantilever beam switch N-type MESFET cantilever switch is suspended in its grid used in nor gate in the present invention
On pole, Schottky contacts are formd between N-type MESFET grid and substrate, is formed exhaust in square substrate under the gate
Layer, the actuation voltage of N-type MESFET cantilever switch be designed to it is equal with MESFET threshold voltage, when being carried in cantilever
When the voltage that beam switchs between pull-down electrode is more than MESFET threshold voltage, cantilever switch drop-down is close to grid, N-type
MESFET is turned on.When institute's making alive is less than MESFET threshold voltage between cantilever switch and pull-down electrode, cantilever beam is opened
Pass can not be pulled down, N-type MESFET shut-offs, and now cantilever switch is in suspended state, reduces grid leakage current to reduce
The power consumption of the nor gate.
As long as it is high level all the way that two digital signal input ends of the nor gate, which have, the high level input signal passes through anchor
Area is added on double cantilever beam switch N-type MESFET cantilever switch, and the cantilever switch can be made to pull down and turn on, so that
Make to be output as low level.Only when two digital signal input ends are all low level, the two of double cantilever beam switch N-type MESFET
Individual cantilever switch can not all be pulled down, and double cantilever beam switch N-type MESFET can not be turned on, then high level is output as, so as to realize
Input signal is carried out or non-functionDouble cantilever beam switch N-type MESFET in the nor gate is off
Its cantilever switch is in suspended state during state, and grid leakage current is now not present on the MESFET in the nor gate.Nor gate
Truth table：
| A | B | Y |
| 0 | 0 | 1 |
| 1 | 0 | 0 |
| 0 | 1 | 0 |
| 1 | 1 | 0 |
The preparation method of GaN base low-leakage current double cantilever beam switch MESFET nor gates includes following steps：
1) semi-insulating GaN substrate is prepared；
2) deposit silicon nitride, one layer of silicon nitride is grown with plasma-enhanced chemical vapour deposition technique (PECVD),
Then photoetching and etch silicon nitride, remove the silicon nitride of N-type MESFET active areas；
3) N-type MESFET active areas ion implanting：Inject after phosphorus, anneal in a nitrogen environment；After the completion of annealing, in high temperature
Lower carry out N+Dopant redistribution, forms the N-type active layer of N-type MESFET active areas；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) photoetching switch region, removes the photoresist of switch region；
6) electron beam evaporation titanium/platinum/gold；
7) titanium/platinum/gold on photoresist and photoresist is removed；
8) heat, make titanium/platinum/billon and N-type GaN active layers formation Schottky contacts；
9) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
10) heavily doped N-type impurity is injected, the N-type heavily doped region formed in N-type MESFET source electrodes and drain region, injection
Short annealing processing is carried out afterwards；
11) photoetching source electrode and drain electrode, remove lead, source electrode and the photoresist of drain electrode；
12) it is evaporated in vacuo gold germanium ni au；
13) the gold germanium ni au on photoresist and photoresist is removed；
14) alloying formation Ohmic contact, forms lead, source electrode and drain electrode；
15) photoresist is coated, the photoresist of the anchor zone position of input lead, battery lead plate and clamped beam is removed；
16) evaporation first layer gold, its thickness is about 0.3 μm；
17) gold on photoresist and photoresist is removed, the anchor area of input lead, battery lead plate and clamped beam is preliminarily formed；
18) deposit silicon nitride：Grown with plasma-enhanced chemical vapour deposition technique (PECVD)Thick
Silicon nitride medium layer；
19) photoetching and etch nitride silicon dielectric layer, are retained in the silicon nitride on battery lead plate；
20) deposit and photoetching polyimide sacrificial layer：The polyimides sacrifice of 1.6 μ m-thicks is coated in gallium arsenide substrate
Layer, it is desirable to fill up pit；Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam；
21) titanium/gold/titanium is evaporated, its thickness isEvaporate the down payment for plating；
22) photoetching：The photoresist in place will be electroplated by removing；
23) gold is electroplated, its thickness is 2 μm；
24) photoresist is removed：The photoresist in place need not be electroplated by removing；
25) titanium/gold/titanium is anti-carved, corrodes down payment, clamped beam is formed；
26) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under clamped beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
Difference with the prior art of the present invention is：
Double cantilever beam switch MESFET two cantilever switch are suspended in it used in nor gate in the present invention
On grid, Schottky contacts are formd between N-type MESFET grid and substrate, consumption are formed in square substrate under the gate
Layer to the greatest extent, the actuation voltage of N-type MESFET cantilever switch be designed to it is equal with MESFET threshold voltage, it is outstanding when being carried in
When the voltage that arm beam switchs between pull-down electrode is more than MESFET threshold voltage, cantilever switch drop-down is close to grid, N
Type MESFET is turned on.When institute's making alive is less than MESFET threshold voltage between cantilever switch and pull-down electrode, cantilever beam
Switch can not be pulled down, its MESFET shut-offs, and now cantilever switch is in suspended state, reduces grid leakage current to reduce
The power consumption of the nor gate.
The structure for meeting conditions above is considered as the GaN base low-leakage current double cantilever beam switch MESFET or non-of the present invention
Door.
Claims (1)
1. a kind of gallium nitride base low-leakage current double cantilever beam switchs nor gate, it is characterized in that the nor gate with double cantilever beam by opening
N-type MESFET (1), resistance (2) and power supply composition are closed, double cantilever beam switch MESFET (1) is to be produced on semi-insulating GaN substrate
(3) on, double cantilever beam switch MESFET (1) source electrode (10) and drain electrode (12) are formed ohm and connect by metal and heavy doping N areas
Touch and constitute, grid (5) is formed Schottky contacts and constituted by titanium/platinum/billon and N-type active layer (11), in cantilever switch N-type
The cantilever switch (6) of two symmetric designs being made with titanium/gold/titanium is left floating above MESFET (1) grid (5),
Certain gap is left between the suspension end of two cantilever switch (6) to ensure not do mutually during two cantilever switch (6) drop-downs
Disturb, the position of two cantilever switch (6) is symmetrical on the MESFET source-drain direction, anchor area (7) system of cantilever switch (6)
Make on semi-insulating GaN substrate (3), there is pull-down electrode (8) between substrate in cantilever switch (6), pull-down electrode (8) by
Silicon nitride material (9) is covered, cantilever switch N-type MESFET (1) pull-down electrode (8) ground connection, double cantilever beam switch
MESFET (1) source electrode (10) ground connection, drain electrode (12) is connected by resistance (2) with power supply VCC, source electrode (10) and drain electrode (12) point
It is not connected with lead (4), lead (4) makes of gold, two-way input signal is that signal A and signal B are switched in double cantilever beam respectively
MESFET (1) two cantilever switch (6) input, output signal Y switchs MESFET (1) drain electrode (12) in the double cantilever beam
Exported between resistance (2), the resistance of resistance (2) is much larger than the impedance that the MESFET is turned on, so as to ensure in cantilever switch N
Type MESFET (1) is obtained being output as low level when turning on by electric resistance partial pressure；
Two cantilever switch (6) are being supported and suspended on above grid (5) by anchor area (7), grid (5) and substrate (3) it
Between form Schottky contacts；N-type MESFET two cantilever switch (6) actuation voltage design with the N-type
MESFET threshold voltage is equal, only when voltage added on N-type MESFET cantilever switch (6) is more than N-type MESFET
Threshold voltage when, its cantilever switch (6) could pull down and contact grid (5) so that double cantilever beam switch MESFET (1)
Conducting, when institute's making alive is both less than N-type MESFET threshold voltage on N-type MESFET two cantilever switch (6), two
Cantilever switch (6) just can not all be pulled down, MESFET shut-offs, and when nor gate works, when N-type MESFET is off, it hangs
Arm beam switch (6) is at suspended state, grid leakage current is reduced, so as to reduce the power consumption of circuit.
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| CN201510379728.4A CN104935327B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current double cantilever beam switchs nor gate |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1051296A (en) * | 1996-08-06 | 1998-02-20 | Nippon Telegr & Teleph Corp <Ntt> | Logic circuit |
| CN102735935A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110055110A (en) * | 2009-11-19 | 2011-05-25 | 엘지디스플레이 주식회사 | Semiconductor light emitting device and method manufacturing thereof |
| US8242510B2 (en) * | 2010-01-28 | 2012-08-14 | Intersil Americas Inc. | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1051296A (en) * | 1996-08-06 | 1998-02-20 | Nippon Telegr & Teleph Corp <Ntt> | Logic circuit |
| CN102735935A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method |
Non-Patent Citations (1)
| Title |
|---|
| 增强型GaNMOSFET的制备及其绝缘栅的电荷特性研究;周桂林;《中国科技论文》;20150228;第10卷(第4期);420-423页 * |
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