CN104953969B - Gallium nitride base low-leakage current clamped beam switchs difference amplifier - Google Patents
Gallium nitride base low-leakage current clamped beam switchs difference amplifier Download PDFInfo
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- CN104953969B CN104953969B CN201510379962.7A CN201510379962A CN104953969B CN 104953969 B CN104953969 B CN 104953969B CN 201510379962 A CN201510379962 A CN 201510379962A CN 104953969 B CN104953969 B CN 104953969B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45346—Indexing scheme relating to differential amplifiers the AAC comprising one or more FETs with multiple drains
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45348—Indexing scheme relating to differential amplifiers the AAC comprising one or more FETs with multiple gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45618—Indexing scheme relating to differential amplifiers the IC comprising only one switch
Abstract
The gallium nitride base low-leakage current clamped beam switch difference amplifier of the present invention has small volume, it is easy to which integrated, switching speed waits remarkable advantage soon；Tradition MESFET is replaced with the MESFET that clamped beam is switched, used N-type MESFET clamped beam switch is suspended on MESFET grid in the present invention, Schottky contacts are formd between MESFET grid and substrate, under the gate depletion layer is formed in square substrate, the actuation voltage that clamped beam is switched is designed to equal with MESFET threshold voltage, when the voltage loaded between clamped beam switch and pull-down electrode is more than MESFET threshold voltage, clamped beam drop-down is close to grid, now the width of depletion region in the MESFET channel regions reduces, when the voltage loaded between clamped beam switch and pull-down electrode is less than MESFET threshold voltage, clamped beam cannot be pulled down, MESFET cannot be turned on, so as to which grid leakage current would not be present, reduce the power consumption of difference amplifier.
Description
Technical field
The present invention proposes gallium nitride base low-leakage current clamped beam switch MESFET (metal-semiconductor field effect transistor)
Difference amplifier, belongs to the technical field of microelectromechanical systems.
Background technology
With the high speed development of wireless communication technology, traditional silicon-based devices can not meet high frequency, efficient and resistance to height
The requirement of temperature, therefore various new devices and semi-conducting material be constantly suggested.The transistor of gallium nitride material manufacture has
Very high electron mobility, very strong capability of resistance to radiation, very big operating temperature range.Gallium nitride field effect transistor can be
Used in high frequency, super high frequency amplifier circuit.Nowadays the size of transistor has been developed to Nano grade, corresponding integrated circuit
The integrated level of unit area is still lifted constantly, and the function of chip is also increasingly sophisticated, presents the state of numerical model analysis,
While the processing speed more and more higher of chip；The thing followed is exactly the power problemses of integrated circuit, and too high power consumption can make
Chip overheating, the working characteristics of transistor can affected by temperature and change, so overheat chip temperature not only
Chip service life reduction can be made, and the stability of chip can be influenceed.Because the development of battery technology has met with unprecedented skill
Art bottleneck, so finding a kind of solution of low-power consumption just seems particularly significant.
Difference amplifier is as the important component of Analogous Integrated Electronic Circuits, and it can be amplified to difference mode signal
While suppression common mode signal, so as to effectively suppress influence of the extraneous factors such as temperature change to circuit.Traditional MESFET is in work
There is larger grid leakage current, the development of MEMS technology causes manufacture that there is movable clamped beam to open during state between grid and substrate
The new MESFET closed imagination becomes a reality, and can effectively reduce using with the MESFET Design enlargements device that clamped beam is switched
The grid leakage current of transistor in difference amplifier, reduces the power consumption of difference amplifier.
The content of the invention
Technical problem:Put it is an object of the invention to provide a kind of gallium nitride base low-leakage current clamped beam switch MESFET difference
Big device, the MESFET difference with clamped beam construction of switch is changed to by the traditional MESFET differential pairs used in difference amplifier
It is right, when the difference amplifier is in running order, it can effectively reduce the grid leakage current of transistor to reduce difference
The power consumption of amplifier.
Technical scheme：The gallium nitride base low-leakage current clamped beam switch difference amplifier of the present invention has clamped beam by two
The first N-type MESFET, the second N-type MESFET of switch and a constant-current source composition, above-mentioned two N-type MESFET source electrode are connected on
Together, and with constant-current source connect, the other end ground connection of constant-current source, above-mentioned two N-type MESFET drain electrode connects with resistance respectively,
Resistance is used as load, two resistance connect with supply voltage jointly, two N-type MESFETs of the AC signal in differential pair
Inputted between clamped beam switch, the AC signal after being exaggerated is defeated between the two N-types MESFET drain electrode and load resistance
Go out；Lead is made up of metal, two N-type MESFET clamped beam switch by anchor area the grid for being supported and suspended on MESFET it
On, clamped beam switch is made up of titanium/gold/titanium, and the AC signal of input is connected on clamped beam switch, and MESFET is by grid, source
Pole and drain electrode are constituted, and wherein source electrode and drain electrode is formed Ohmic contact and constituted by metal and heavy doping N areas, and grid is by metal and raceway groove
Area forms Schottky contacts and constituted, and anchor area is produced on substrate, and N-type active area constitutes source electrode and drain electrode, clamped beam switch with
There is pull-down electrode between substrate, pull-down electrode is covered by silicon nitride, pull-down electrode ground connection, circuit production is served as a contrast in p-type gallium nitride
On bottom.
The first N-type MESFET or the second N-type MESFET clamped beam switch are suspended on its grid, N-type
Schottky contacts are formd between MESFET grid and substrate, depletion layer are formed in square substrate under the gate, the N-type
The actuation voltage of MESFET clamped beam switch is designed as equal with ESFET threshold voltage, is switched when being carried in clamped beam
When voltage between pull-down electrode is more than MESFET threshold voltage, clamped beam switch drop-down is close to grid, N-type MESFET
Depletion region thickness reduce and turn on, the amplification of AC signal is realized on this basis；When clamped beam switch with pull-down electrode it
Between institute's making alive when being less than MESFET threshold voltage, clamped beam switch 5 cannot be pulled down, and voltage is just not present on its grid,
N-type MESFET cannot be turned on, and grid leakage current would not be present, and reduce the power consumption of difference amplifier.
When the difference amplifier is in operating conditions, two N-type MESFET of composition differential pair are the first N-type MESFET and the
Two N-type MESFET pull-down electrode is all grounded by high frequency choke coil, to prevent AC signal to be lost in by ground, by AC signal
υ in are loaded into by anchor area 7 between two N-type MESFET clamped beam switch, and this AC signal is sufficiently large, when it is in just
The first N-type MESFET of difference centering clamped beam switch drop-down and MESFET grid are adjacent to during the half period, and make the first N-type
MESFET is turned on, and the second N-type MESFET is off state, the situation then phase when this AC signal υ in are in negative half-cycle
Instead, two N-type MESFET in difference amplifier are thus made to be broken off a friendship as the change of AC signal is in one logical one for change
State, MESFET OFF state means that its clamped beam switch is in suspended state, i.e., now on MESFET grid not
There is voltage, also just without grid leakage current, so ought be in circuit after input exchange signal υ in, the difference amplifier energy
Enough realize the amplification of signal and export υ out.
Beneficial effect：Clamped beam in the gallium nitride base low-leakage current clamped beam switch MESFET difference amplifiers of the present invention
When switch MESFET clamped beam switch drop-down is in contact with N-type MESFET grids, voltage presence is just had on grid, when clamped
When beam switch is in suspended state, can not effectively it turn on, therefore clamped beam switch MESFET can effectively reduce electric leakage of the grid
Stream, reduces the power consumption of circuit；And the MESFET of gallium nitride base has high electron mobility, circuit under radiofrequency signal disclosure satisfy that
The need for normal work.
Brief description of the drawings
Fig. 1 is the top view that gallium nitride base low-leakage current clamped beam switchs MESFET difference amplifiers
Fig. 2 be gallium nitride base low-leakage current clamped beam switch MESFET difference amplifiers A-A' to profile
Fig. 3 be gallium nitride base low-leakage current clamped beam switch MESFET difference amplifiers B-B' to profile
Fig. 4 is the schematic diagram that gallium nitride base low-leakage current clamped beam switchs MESFET difference amplifiers
Figure includes：First N-type MESFET1, the second N-type MESFET 2, constant-current source 3, lead 4, clamped beam switch 5, grid
Pole 6, anchor area 7, N traps 8, N-type active area 9, pull-down electrode 10, substrate 11.
Embodiment
The gallium nitride base low-leakage current clamped beam switch MESFET difference amplifiers of the present invention, are mainly had clamped by two
The first N-type MESFET1, the second N-type MESFET 2 and a constant-current source 3 for beam switch is constituted, and two N-type MESFET source electrode connects
Together, and with constant-current source 3 connect, the other end ground connection of constant-current source 3, two N-type MESFET drain electrode connects respectively at resistance,
Resistance is used as load, and two load resistances connect with supply voltage jointly, and AC signal is clamped two N-type MESFET's
Input, exported between two N-type MESFET drain electrode and load resistance between beam switch；Lead 4 is made up of metal, and MEMS is solid
Being supported and suspended on MESFET grid 6 by anchor area 7 of strutbeam switch 5, clamped beam switch 5 is made up of titanium/gold/titanium,
The AC signal of input be connected on clamped beam switch 5 on, MESFET is made up of grid 6, source electrode and drain electrode, wherein source electrode and drain electrode by
Metal and heavy doping N areas form Ohmic contact and constituted, and grid forms Schottky contacts by metal and channel region and constituted, and anchor area 7 makes
Make on substrate 11, N-type active area 9 constitutes source electrode and drain electrode, there is pull-down electrode 10 between clamped beam switch 5 and substrate 11,
Pull-down electrode is covered by silicon nitride material, pull-down electrode ground connection, and circuit production is on p-type gallium nitride substrate 11.
When the difference amplifier is in operating conditions, two N-type MESFET pull-down electrode 10 is all connect by high frequency choke coil
Between ground, the clamped beam switch 5 for two N-type MESFET that AC signal is loaded into differential pair by anchor area 7, this exchange
Signal is sufficiently large, when it be in positive half period when on the left of the first N-type MESFET clamped beam switch 5 drop-down pasted with its grid 6
Tightly, and the MESFET conductings in left side are made, and the second N-type MESFET on right side is off state, when this AC signal is in
During negative half-cycle situation then on the contrary, thus make two N-type MESFET in difference amplifier with the change of AC signal at
Broken off a friendship in one logical one for the state of change, MESFET OFF state means that its clamped beam switch 5 is in suspended state, that is,
Say on now MESFET grid 6 and in the absence of voltage, then also just without grid leakage current, when input AC is believed in circuit
After number, the difference amplifier can realize the amplification of signal and export υ out, and formula used is as follows：
υ out=Av × υ in, wherein Av are the gain coefficients of the difference amplifier.
The preparation method of gallium nitride base low-leakage current clamped beam switch MESFET difference amplifiers includes following steps：
1) semi-insulating type gallium nitride substrate 11 is prepared；
2) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, the silicon nitride of N-type MESFET channel regions is removed；
3) N-type MESFET Channeling implantations, inject phosphorus, anneal in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter is redistributed, and forms N-type MESFET channel region；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) photoetched grid 6, remove the photoresist in grid region；
6) electron beam evaporation titanium/platinum/gold；
7) titanium/platinum/gold on remaining photoresist and photoresist is removed；
8) heat, make titanium/platinum/billon and N-type MESFET raceway grooves formation Schottky contacts；
9) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
10) carry out N-type to the region to be lightly doped, the N-type formed in N-type MESFET source electrodes and drain region is lightly doped active
Area 9, carries out short annealing processing；
11) photoetching source electrode and drain electrode, remove the photoresist of source electrode and drain electrode；
12) it is evaporated in vacuo gold germanium ni au；
13) the gold germanium ni au on photoresist and photoresist is removed；
14) alloying formation Ohmic contact, forms source electrode and drain electrode；
15) photoresist is coated, the position of anchor area 7 of power line, ground wire, lead 4, pull-down electrode 10 and clamped beam switch is removed
Photoresist；
16) evaporation first layer gold, its thickness is about 0.3 μm；
17) gold on photoresist and photoresist is removed, power line, ground wire, lead 4, pull-down electrode 10 and clamped is formed
The anchor area 7 of beam switch；
18) one layer is depositedThick silicon nitride；
19) photoetching and etch nitride silicon dielectric layer, are retained in the silicon nitride in pull-down electrode 10；
20) deposit and photoetching polyimide sacrificial layer：The polyimides sacrifice of 1.6 μ m-thicks is coated on gallium nitride substrate 11
Layer, it is desirable to fill up pit；Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam switch；
21) titanium/gold/titanium is evaporated, its thickness is 500/1500/
22) photoetching：The photoresist in place will be electroplated by removing；
23) gold is electroplated, its thickness is 2 μm；
24) photoresist is removed：The photoresist in place need not be electroplated by removing；
25) titanium/gold/titanium is anti-carved, corrodes down payment, clamped beam switch 5 is formed；
26) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under clamped beam switch 5, goes
Ionized water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
Difference with the prior art of the present invention is
N-type clamped beam switch MESFET clamped beam switch is suspended in its grid used in frequency mixer in the present invention
On, Schottky contacts are formd between N-type MESFET grid and substrate, is formed exhaust in square substrate under the gate
Layer, N-type MESFET clamped beam switch actuation voltage be designed to it is equal with MESFET threshold voltage, it is clamped when being carried in
When the voltage that beam switchs between pull-down electrode is more than MESFET threshold voltage, clamped beam switch drop-down is close to grid, N-type
MESFET depletion region thickness reduces and turned on, and the amplification of AC signal is realized on this basis；When clamped beam is switched with pulling down
When institute's making alive is less than MESFET threshold voltage between electrode, clamped beam switch cannot be pulled down, and be just not present on its grid
Voltage, so N-type MESFET cannot be turned on, then grid leakage current would not be present, and this reduces differential amplification
The power consumption of device.
The structure for meeting conditions above can be considered that the gallium nitride base low-leakage current clamped beam switch MESFET of the present invention is poor
Divide amplifier.
Claims (3)
1. a kind of gallium nitride base low-leakage current clamped beam switchs difference amplifier, it is characterised in that the difference amplifier is by two tools
The first N-type MESFET (1), the second N-type MESFET (2) and the constant-current source (3) switched by clamped beam constitutes, above-mentioned two N
Type MESFET source electrode is connected together, and connects with constant-current source (3), the other end ground connection of constant-current source, above-mentioned two N-type MESFET
Drain electrode connect respectively with resistance, resistance is used as load, and two resistance connect with supply voltage jointly, and AC signal is in difference
Be divided to two N-type MESFET clamped beam switch (5) between input, be exaggerated after AC signal in the two N-types
Exported between MESFET drain electrode and load resistance；Lead (4) is made up of metal, two N-type MESFET clamped beam switch (5)
By being supported and suspended on MESFET grid (6) for anchor area (7), clamped beam switch (5) is made up of titanium/gold/titanium, is inputted
AC signal be connected on clamped beam switch (5) on, MESFET by grid (6), source electrode and drain electrode constitutes, wherein source electrode and drain by
Metal and heavy doping N areas form Ohmic contact and constituted, and grid (6) forms Schottky contacts by metal and channel region and constituted, anchor area
(7) it is produced on substrate (11), N-type active area (9) constitutes source electrode and drain electrode, between clamped beam switch (5) and substrate (11)
There is pull-down electrode (10), pull-down electrode (10) is covered by silicon nitride, pull-down electrode (10) ground connection, circuit production is nitrogenized in p-type
On gallium substrate (11).
2. gallium nitride base low-leakage current clamped beam according to claim 1 switchs difference amplifier, it is characterised in that described
First N-type MESFET (1) or the second N-type MESFET (2) clamped beam switch (5) are suspended on its grid (6), N-type
Schottky contacts are formd between MESFET grid (6) and substrate (11), consumption is formed in the substrate (11) below grid (6)
Layer to the greatest extent, the actuation voltage of N-type MESFET clamped beam switch (5) is designed as equal with MESFET threshold voltage, works as loading
When the voltage switched in clamped beam between (5) and pull-down electrode (10) is more than MESFET threshold voltage, under clamped beam switch (5)
Drawing is close to grid (6), and N-type MESFET depletion region thickness reduces and turned on, and the amplification of AC signal is realized on this basis；
When institute's making alive is less than MESFET threshold voltage between clamped beam switch (5) and pull-down electrode (10), clamped beam switch (5)
It cannot pull down, voltage is just not present on its grid (6), N-type MESFET cannot be turned on, and grid leakage current would not be deposited
Reducing the power consumption of difference amplifier.
3. gallium nitride base low-leakage current clamped beam according to claim 1 switchs difference amplifier, it is characterised in that the difference
When dividing amplifier in operating conditions, two N-type MESFET of composition differential pair are the first N-type MESFET (1) and the second N-type
MESFET (2) pull-down electrode (10) is all grounded by high frequency choke coil, to prevent AC signal to be lost in by ground, and exchange is believed
Number υ in are loaded into by anchor area (7) between two N-type MESFET clamped beam switch (5), and this AC signal is sufficiently large, when
First N-type MESFET (1) of difference centering clamped beam switch (5) drop-down and MESFET grid when it is in positive half period
(6) it is adjacent to, and turns on the first N-type MESFET (1), the second N-type MESFET (2) is off state, as this AC signal υ
Situation is then on the contrary, thus make two N-type MESFET in difference amplifier with AC signal when in is in negative half-cycle
Change is broken off a friendship for the state of change in one logical one, and MESFET OFF state means that its clamped beam switch (5) is in suspension
State, i.e., now on MESFET grid (6) and in the absence of voltage, also just without grid leakage current, so ought input in circuit
After AC signal υ in, the difference amplifier can realize the amplification of signal and export υ out.
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| CN201510379962.7A CN104953969B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam switchs difference amplifier |
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| CN201510379962.7A CN104953969B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam switchs difference amplifier |
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| CN104953969B true CN104953969B (en) | 2017-09-15 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320398A (en) * | 2008-07-18 | 2008-12-10 | 东南大学 | Method for establishing micro-electromechanical variable cross-section clamped beam system-level macro model |
| CN102347737A (en) * | 2011-06-22 | 2012-02-08 | 中国电子科技集团公司第十三研究所 | Broadband gallium-nitride-based microwave high-power single-chip integrated power amplifier |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1514110A4 (en) * | 2002-05-07 | 2009-05-13 | California Inst Of Techn | An apparatus and method for two-dimensional electron gas actuation and transduction for gaas nems |
| WO2008054797A2 (en) * | 2006-10-30 | 2008-05-08 | Nortel Networks Limited | High efficiency digital power amplifier |
-
2015
- 2015-07-01 CN CN201510379962.7A patent/CN104953969B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101320398A (en) * | 2008-07-18 | 2008-12-10 | 东南大学 | Method for establishing micro-electromechanical variable cross-section clamped beam system-level macro model |
| CN102347737A (en) * | 2011-06-22 | 2012-02-08 | 中国电子科技集团公司第十三研究所 | Broadband gallium-nitride-based microwave high-power single-chip integrated power amplifier |
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
Non-Patent Citations (4)
| Title |
|---|
| "2-Dimensional vibration model of MEMS cantilever beams with step-up anchors";Wang Kaiyue等;《Microsystem Technologies》;20150526;第22卷(第4期);第893–901页 * |
| "A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology";Juzheng Han等;《Journal of Micromechanics and Microengineering》;20140630;第24卷(第6期);第1-7页 * |
| "X波段交直流分离的MEMS开关的设计与研究";蔡洁等;《微纳电子技术》;20050831(第8期);第369-373页 * |
| "硅基共面波导RFMEMS开关设计关键技术研究";樊森;《中国博士学位论文全文数据库 工程科技II辑》;20150415;第2015年卷(第4期);第C042-11页 * |
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