CN104953969A - Gallium nitride-based low current leakage fixed beam switch differential amplifier - Google Patents
Gallium nitride-based low current leakage fixed beam switch differential amplifier Download PDFInfo
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- CN104953969A CN104953969A CN201510379962.7A CN201510379962A CN104953969A CN 104953969 A CN104953969 A CN 104953969A CN 201510379962 A CN201510379962 A CN 201510379962A CN 104953969 A CN104953969 A CN 104953969A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 21
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 32
- 229940044658 gallium nitrate Drugs 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000010354 integration Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000011161 development Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45346—Indexing scheme relating to differential amplifiers the AAC comprising one or more FETs with multiple drains
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45348—Indexing scheme relating to differential amplifiers the AAC comprising one or more FETs with multiple gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45618—Indexing scheme relating to differential amplifiers the IC comprising only one switch
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a gallium nitride-based low current leakage fixed beam switch differential amplifier. The gallium nitride-based low current leakage fixed beam switch differential amplifier has the obvious advantages that the volume is small, the integration is easy, and the switching speed is fast. A traditional MESFET is substituted by an MESFET with a fixed beam switch, the fixed beam switch of an N type MESFET used in the gallium nitride-based low current leakage fixed beam switch differential amplifier is suspended above a grid of the MESFET, the Schottky contact is formed between the grid of the MESFET and a substrate, a depletion layer is formed in the substrate below the grid, the pull-down voltage of the fixed beam switch is designed to be equal to the threshold voltage of the MESFET, when the loaded voltage between the fixed beam switch and the pull-down electrode is larger than the threshold voltage of the MESFET, the fixed beam is pulled down to be closely attached to the grid, the width of a depletion region in a channel region of the MESFET is reduced, when the loaded voltage between the fixed beam switch and the pull-down electrode is smaller than the threshold voltage of the MESFET, the fixed beam can not be pulled down, the MESFET can not be in breakover, therefore, the grid current leakage can not exist, and the power consumption of the differential amplifier is reduced.
Description
Technical field
The present invention proposes gallium nitrate based low-leakage current clamped beam switch MESFET (metal-semiconductor field effect transistor) differential amplifier, belong to the technical field of microelectromechanical systems.
Background technology
Along with the high speed development of wireless communication technology, traditional silicon-based devices cannot meet high frequency, efficient and resistant to elevated temperatures requirement, and therefore various novel device and semi-conducting material are constantly suggested.The transistor of gallium nitride material manufacture has very high electron mobility, very strong capability of resistance to radiation, very large operating temperature range.Gallium nitride field effect transistor can use in high frequency, super high frequency amplifier circuit.Nowadays the size of transistor is developed to Nano grade, and the integrated level of corresponding lsi unit area is still constantly promoting, and the function of chip is also increasingly sophisticated, presents the state of numerical model analysis, and the processing speed of chip is more and more higher simultaneously; The thing followed is exactly the power problems of integrated circuit, and too high power consumption can make chip overheating, the operating characteristic of transistor can be subject to the impact of temperature and change, so overheated chip temperature not only can make chip service life reduction, and can affect the stability of chip.Development due to battery technology has met with unprecedented technical bottleneck, so find a kind of solution of low-power consumption just to seem very important.
Differential amplifier is as the important component part of analog integrated circuit, and it can suppress common-mode signal while amplifying difference mode signal, thus effectively suppresses the impact of the extraneous factor changes such as temperature on circuit.Tradition MESFET has larger grid leakage current when operating conditions between grid and substrate, the imagination that the development of MEMS technology makes to manufacture the novel MESFET with movable clamped beam switch becomes a reality, utilize the MESFET Design enlargement device with clamped beam switch effectively can reduce the grid leakage current of the transistor in differential amplifier, reduce the power consumption of differential amplifier.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier, the traditional MESFET differential pair adopted in differential amplifier is changed to the MESFET differential pair with clamped beam construction of switch, when this differential amplifier is in running order, the grid leakage current of transistor effectively can be reduced thus the power consumption of reduction differential amplifier.
Technical scheme: gallium nitrate based low-leakage current clamped beam switch differential amplifier of the present invention has the first N-type MESFET of clamped beam switch by two, a second N-type MESFET and constant-current source composition, the source electrode of above-mentioned two N-type MESFET is connected together, and connect with constant-current source, the other end ground connection of constant-current source, the drain electrode of above-mentioned two N-type MESFET connects with resistance respectively, resistance uses as load, two resistance connect with supply voltage jointly, AC signal inputs between the clamped beam switch of two N-type MESFET of differential pair, AC signal after being exaggerated exports between the drain electrode and load resistance of these two N-type MESFET, lead-in wire is made up of metal, the clamped beam switch of two N-type MESFET relies on the grid being supported and suspended on MESFET in anchor district, this clamped beam switch is made up of titanium/gold/titanium, the AC signal of input is connected on clamped beam switch, MESFET is by grid, source electrode and drain electrode are formed, wherein source electrode and drain electrode form ohmic contact by metal and heavy doping N district and form, grid forms Schottky contacts by metal and channel region and forms, anchor district is produced on substrate, N-type active area forms source electrode and drain electrode, pull-down electrode is there is between clamped beam switch and substrate, pull-down electrode is covered by silicon nitride, pull-down electrode ground connection, circuit production is on P type gallium nitride substrate.
The clamped beam switch of described first N-type MESFET or the second N-type MESFET is suspended on its grid, Schottky contacts is defined between the grid of N-type MESFET and substrate, depletion layer is formed in substrate square under the gate, the actuation voltage of the clamped beam switch of this N-type MESFET is designed to equal with the threshold voltage of ESFET, when being carried in the voltage between clamped beam switch and pull-down electrode and being greater than the threshold voltage of MESFET, clamped beam switch is drop-down to be close to grid, the depletion region thickness of N-type MESFET reduces and conducting, realize the amplification of AC signal on this basis, when between clamped beam switch and pull-down electrode, institute's making alive is less than the threshold voltage of MESFET, clamped beam switch 5 just can not be drop-down, and its grid does not just exist voltage, and this N-type MESFET just can not conducting, grid leakage current would not exist, and reduces the power consumption of differential amplifier.
When this differential amplifier is in operating conditions, two the N-type MESFET i.e. pull-down electrode of the first N-type MESFET and the second N-type MESFET of composition differential pair is all by high frequency choke coil ground connection, run off with passing through to prevent AC signal, between clamped beam switch AC signal υ in being loaded into two N-type MESFET by anchor district 7, this AC signal is enough large, when it is in positive half period, the clamped beam switch of the first N-type MESFET of difference centering is drop-down is adjacent to the grid of MESFET, and make the first N-type MESFET conducting, second N-type MESFET is in off state, when this AC signal υ in is in negative half-cycle, situation is then contrary, in differential amplifier two N-type MESFET are so just made to break off a friendship for the state of change along with the change of AC signal is in one logical one, the OFF state of MESFET means that its clamped beam switch is in suspended state, there is not voltage in the grid of i.e. now MESFET, just grid leakage current is not had yet, so ought in circuit after input exchange signal υ in, this differential amplifier can realize the amplification of signal and export υ out.
Beneficial effect: the clamped beam switch of the clamped beam switch MESFET in gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier of the present invention is drop-down when contacting with N-type MESFET grid, grid just has voltage to exist, when clamped beam switch is in suspended state, can not effectively conducting, therefore clamped beam switch MESFET can effectively reduce grid leakage current, reduces the power consumption of circuit; And gallium nitrate based MESFET has high electron mobility, the normal requirements of one's work of circuit under radiofrequency signal can be met.
Accompanying drawing explanation
Fig. 1 is the vertical view of gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier
Fig. 2 be gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier A-A' to profile
Fig. 3 be gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier B-B' to profile
Fig. 4 is the schematic diagram of gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier
Figure comprises: the first N-type MESFET1, the second N-type MESFET 2, constant-current source 3, lead-in wire 4, clamped beam switch 5, grid 6, anchor district 7, N trap 8, N-type active area 9, pull-down electrode 10, substrate 11.
Embodiment
Gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier of the present invention, there is primarily of two the first N-type MESFET1 of clamped beam switch, second N-type MESFET 2 and a constant-current source 3 form, the source electrode of two N-type MESFET is connected together, and connect with constant-current source 3, the other end ground connection of constant-current source 3, the drain electrode of two N-type MESFET connects respectively at resistance, resistance uses as load, two load resistances connect with supply voltage jointly, AC signal inputs between the clamped beam switch of two N-type MESFET, export between the drain electrode and load resistance of two N-type MESFET, lead-in wire 4 is made up of metal, MEMS clamped beam switch 5 relies on the grid 6 being supported and suspended on MESFET in anchor district 7, this clamped beam switch 5 is made up of titanium/gold/titanium, the AC signal of input is connected on clamped beam switch 5, MESFET is by grid 6, source electrode and drain electrode are formed, wherein source electrode and drain electrode form ohmic contact by metal and heavy doping N district and form, grid forms Schottky contacts by metal and channel region and forms, anchor district 7 makes on substrate 11, N-type active area 9 forms source electrode and drain electrode, pull-down electrode 10 is there is between clamped beam switch 5 and substrate 11, pull-down electrode is covered by silicon nitride material, pull-down electrode ground connection, circuit production is on P type gallium nitride substrate 11.
When this differential amplifier is in operating conditions, the pull-down electrode 10 of two N-type MESFET all passes through high frequency choke coil ground connection, between the clamped beam switch 5 AC signal being loaded into two N-type MESFET in differential pair by anchor district 7, this AC signal is enough large, the clamped beam switch 5 of the first N-type MESFET on the left of when it is in positive half period is drop-down to be adjacent to its grid 6, and make the MESFET conducting in left side, and the second N-type MESFET on right side is in off state, when this AC signal is in negative half-cycle, situation is then contrary, in differential amplifier two N-type MESFET are so just made to break off a friendship for the state of change along with the change of AC signal is in one logical one, the OFF state of MESFET means that its clamped beam switch 5 is in suspended state, there is not voltage in the grid 6 of that is now MESFET, so just there is no grid leakage current yet, after input exchange signal in circuit, this differential amplifier can realize the amplification of signal and export υ out, formula used is as follows:
υ out=Av × υ in, wherein Av is the gain coefficient of this differential amplifier.
The preparation method of gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier comprises following step:
1) semi-insulating type gallium nitride substrate 11 is prepared;
2) deposit one deck silicon nitride, photoetching etch silicon nitride, remove the silicon nitride of N-type MESFET channel region;
3) N-type MESFET Channeling implantation, injects phosphorus, anneals in a nitrogen environment; After having annealed, at high temperature carry out dopant redistribution, form the channel region of N-type MESFET;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) photoetched grid 6, removes the photoresist in grid region;
6) electron beam evaporation titanium/platinum/gold;
7) titanium/platinum/gold on remaining photoresist and photoresist is removed;
8) heat, make titanium/platinum/billon and N-type MESFET raceway groove form Schottky contacts;
9) photoresist is applied, photoetching the photoresist of etching N type MESFET source electrode and drain region;
10) N-type light dope is carried out to this region, in the N-type light dope active area 9 that N-type MESFET source electrode and drain region are formed, carry out short annealing process;
11) photoetching source electrode and drain electrode, removes the photoresist of source electrode and drain electrode;
12) vacuum evaporation gold germanium nickel/gold;
13) gold germanium nickel/gold on photoresist and photoresist is removed;
14) alloying forms ohmic contact, forms source electrode and drain electrode;
15) apply photoresist, remove the photoresist of the position, anchor district 7 of power line, ground wire, lead-in wire 4, pull-down electrode 10 and clamped beam switch;
16) evaporate ground floor gold, its thickness is about 0.3 μm;
17) remove the gold on photoresist and photoresist, form the anchor district 7 of power line, ground wire, lead-in wire 4, pull-down electrode 10 and clamped beam switch;
18) deposit one deck
thick silicon nitride;
19) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride in pull-down electrode 10;
20) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer on gallium nitride substrate 11, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam switch;
21) evaporate titanium/gold/titanium, its thickness is 500/1500/
22) photoetching: remove and will electroplate local photoresist;
23) electrogilding, its thickness is 2 μm;
24) photoresist is removed: remove and do not need to electroplate local photoresist;
25) anti-carve titanium/gold/titanium, corrosion down payment, forms clamped beam switch 5;
26) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under clamped beam switch 5, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Difference with the prior art of the present invention is
The clamped beam switch of the N-type clamped beam switch MESFET that the frequency mixer in the present invention uses is suspended on its grid, Schottky contacts is defined between the grid of N-type MESFET and substrate, depletion layer is formed in substrate square under the gate, the actuation voltage of the clamped beam switch of this N-type MESFET designs equal with the threshold voltage of MESFET, when being carried in the voltage between clamped beam switch and pull-down electrode and being greater than the threshold voltage of MESFET, clamped beam switch is drop-down to be close to grid, the depletion region thickness of N-type MESFET reduces and conducting, realize the amplification of AC signal on this basis, when between clamped beam switch and pull-down electrode, institute's making alive is less than the threshold voltage of MESFET, clamped beam switch just can not be drop-down, just there is not voltage in its grid, so this N-type MESFET just can not conducting, so grid leakage current would not exist, and this reduces the power consumption of differential amplifier.
Namely the structure meeting above condition can be considered gallium nitrate based low-leakage current clamped beam switch MESFET differential amplifier of the present invention.
Claims (3)
1. a gallium nitrate based low-leakage current clamped beam switch differential amplifier, it is characterized in that this differential amplifier has the first N-type MESFET(1 of clamped beam switch by two), second N-type MESFET(2) and constant-current source (3) composition, the source electrode of above-mentioned two N-type MESFET is connected together, and connect with constant-current source (3), the other end ground connection of constant-current source, the drain electrode of above-mentioned two N-type MESFET connects with resistance respectively, resistance uses as load, two resistance connect with supply voltage jointly, AC signal inputs between the clamped beam switch (5) of two N-type MESFET of differential pair, AC signal after being exaggerated exports between the drain electrode and load resistance of these two N-type MESFET, lead-in wire (4) is made up of metal, the clamped beam switch (5) of two N-type MESFET relies on the grid (6) being supported and suspended on MESFET in anchor district (7), this clamped beam switch (5) is made up of titanium/gold/titanium, the AC signal of input is connected on clamped beam switch (5), MESFET is by grid (6), source electrode and drain electrode are formed, wherein source electrode and drain electrode form ohmic contact by metal and heavy doping N district and form, grid (6) forms Schottky contacts by metal and channel region and forms, anchor district (7) is produced on substrate (11), N-type active area (9) forms source electrode and drain electrode, pull-down electrode (10) is there is between clamped beam switch (5) and substrate (11), pull-down electrode (10) is covered by silicon nitride, pull-down electrode (10) ground connection, circuit production is on P type gallium nitride substrate (11).
2. gallium nitrate based low-leakage current clamped beam switch differential amplifier according to claim 1, it is characterized in that described first N-type MESFET(1) or the second N-type MESFET(2) clamped beam switch (5) be suspended on its grid (6), Schottky contacts is defined between the grid (6) of N-type MESFET and substrate (11), depletion layer is formed in the substrate (11) of grid (6) below, the actuation voltage of the clamped beam switch (5) of this N-type MESFET is designed to equal with the threshold voltage of ESFET, when being carried in the voltage between clamped beam switch (5) and pull-down electrode (10) and being greater than the threshold voltage of MESFET, clamped beam switch (5) is drop-down to be close to grid (6), the depletion region thickness of N-type MESFET reduces and conducting, realize the amplification of AC signal on this basis, when between clamped beam switch (5) and pull-down electrode (10), institute's making alive is less than the threshold voltage of MESFET, clamped beam switch 5 just can not be drop-down, its grid (6) is upper does not just exist voltage, this N-type MESFET just can not conducting, grid leakage current would not exist, and reduces the power consumption of differential amplifier.
3. gallium nitrate based low-leakage current clamped beam switch differential amplifier according to claim 1, when it is characterized in that this differential amplifier is in operating conditions, composition differential pair two N-type MESFET i.e. the first N-type MESFET(1) and the second N-type MESFET(2) pull-down electrode (10) all pass through high frequency choke coil ground connection, run off with passing through to prevent AC signal, between the clamped beam switch (5) AC signal υ in being loaded into two N-type MESFET by anchor district 7, this AC signal is enough large, the first N-type MESFET(1 of difference centering when it is in positive half period) clamped beam switch (5) to be drop-downly adjacent to the grid (6) of MESFET, and make the first N-type MESFET(1) conducting, second N-type MESFET(2) be in off state, when this AC signal υ in is in negative half-cycle, situation is then contrary, in differential amplifier two N-type MESFET are so just made to break off a friendship for the state of change along with the change of AC signal is in one logical one, the OFF state of MESFET means that its clamped beam switch (5) is in suspended state, there is not voltage in the grid (6) of i.e. now MESFET, just grid leakage current is not had yet, so ought in circuit after input exchange signal υ in, this differential amplifier can realize the amplification of signal and export υ out.
Priority Applications (1)
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| CN201510379962.7A CN104953969B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam switchs difference amplifier |
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| CN201510379962.7A CN104953969B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam switchs difference amplifier |
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| CN104953969B CN104953969B (en) | 2017-09-15 |
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2015
- 2015-07-01 CN CN201510379962.7A patent/CN104953969B/en not_active Expired - Fee Related
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| JUZHENG HAN等: ""A 0.1-40 GHz broadband MEMS clamped-clamped beam capacitive power sensor based on GaAs technology"", 《JOURNAL OF MICROMECHANICS AND MICROENGINEERING》 * |
| WANG KAIYUE等: ""2-Dimensional vibration model of MEMS cantilever beams with step-up anchors"", 《MICROSYSTEM TECHNOLOGIES》 * |
| 樊森: ""硅基共面波导RFMEMS开关设计关键技术研究"", 《中国博士学位论文全文数据库 工程科技II辑》 * |
| 蔡洁等: ""X波段交直流分离的MEMS开关的设计与研究"", 《微纳电子技术》 * |
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