CN104935263B - Gallium nitride base low-leakage current cantilever switch class B push-pull power amplifier - Google Patents
Gallium nitride base low-leakage current cantilever switch class B push-pull power amplifier Download PDFInfo
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- CN104935263B CN104935263B CN201510379774.4A CN201510379774A CN104935263B CN 104935263 B CN104935263 B CN 104935263B CN 201510379774 A CN201510379774 A CN 201510379774A CN 104935263 B CN104935263 B CN 104935263B
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000007667 floating Methods 0.000 claims abstract description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 18
- 239000010931 gold Substances 0.000 claims description 18
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 238000006880 cross-coupling reaction Methods 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- PMAYAKHWRDUMCW-UHFFFAOYSA-N [Ti].[Ti].[Au] Chemical compound [Ti].[Ti].[Au] PMAYAKHWRDUMCW-UHFFFAOYSA-N 0.000 claims 2
- 239000003353 gold alloy Substances 0.000 claims 2
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 17
- 239000010936 titanium Substances 0.000 description 17
- 229910052719 titanium Inorganic materials 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 238000001259 photo etching Methods 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The gallium nitride base low-leakage current cantilever switch class B push-pull power amplifier of the present invention, the class B push-pull power amplifier is that have cantilever switch N-type MESFET by three, and one there is cantilever switch p-type MESFET, LC loops to constitute.The shape that three cantilever switch N-type MESFET differ only in their cantilever switch is different, first cantilever switch N-type MESFET (1) cantilever switch is wide beam, and the cantilever switch to the second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) is narrow beam.The cantilever switch MESFET that the power amplifier is used is based on GaN substrate, source electrode and drain electrode are formed Ohmic contact and constituted by metal and heavy doping N areas, grid forms Schottky contacts by metal and channel region and constituted, cantilever switch is left floating above MESFET grid, AC signal is carried on cantilever switch, so as to improve the quality factor in the class B push-pull power amplifier output end LC loops of the present invention.
Description
Technical field
The present invention proposes GaN (gallium nitride) base low-leakage current cantilever switch MESFET, and (metal-semiconductor field effect is brilliant
Body pipe) class B push-pull power amplifier, belong to the technical field of microelectromechanical systems.
Background technology
With the development of electronic technology, people need to export larger power in some electronic systems, such as in family expenses
Sound system generally requires the power of sound signal to bring up to several watts to tens watts.In general multistage amplifier circuit, remove
Have voltage amplifier circuit, it is also desirable to one power is provided to load amplifying circuit.Power amplification circuit is divided into Class A, Class B
Deng.In Class A amplifying circuit, power supply is continual to give load conveying power, and signal is bigger, and the power for being conveyed to load is more,
Even if in the ideal situation, the efficiency highest of class a audio power amplifier also can only achieve 50%, wherein quiescent current is to cause class a audio power amplifier
Inefficient principal element.And B power amplifier moves down quiescent point, power supply is defeated when making signal equal to zero
Go out power and be also equal to zero, such power supply supply power and pipe consumption all become with the size of power output, improve efficiency.With
The development of integrated circuit, the scale of chip becomes very big, and people increasingly pay attention to for the power consumption of chip.Too high power consumption meeting
Higher requirement is proposed to the heat sink material of chip, also the performance of chip can be made to be affected.So, for power amplifier
The design of low-power consumption seems more and more important in the design of integrated circuit.
Traditional MESFET has larger grid leakage current in operating conditions between grid and substrate, the present invention is to be based on
A kind of GaN base cantilever switch MESFET class B push-pull power amplifiers with extremely low leakage current of GaN technological designs, can
To be effectively reduced the grid leakage current of transistor in class B push-pull power amplifier, the work(of class B push-pull power amplifier is reduced
Consumption.
The content of the invention
Technical problem:It is an object of the invention to provide gallium nitride base low-leakage current cantilever switch class B push-pull power amplification
Device, can be effectively reduced grid leakage current, be had while B power amplifier output end LC loops are in parallel
The cross-linked cantilever switch MESFET of negative resistance charactertistic can compensate for the dead resistance of inductance in LC loops to pipe, so that
Improve the quality factor in the class B push-pull power amplifier output end LC loops of the present invention.
Technical scheme：A kind of gallium nitride base low-leakage current cantilever switch MESFET class B push-pull power amplifications of the present invention
Device by the first cantilever switch N-type MESFET, the second cantilever switch N-type MESFET, the 3rd cantilever switch N-type MESFET and
Cantilever switch p-type MESFET, constant-current source, LC loops are constituted, the first cantilever switch N-type that the power amplifier is used
MESFET, the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET are based on GaN substrate, its input lead
Be using gold making, source electrode and drain electrode is formed Ohmic contact by metal and heavy doping N areas and is constituted, grid by titanium/platinum/billon with
N-type active layer formation Schottky contacts are constituted, and cantilever switch is left floating above cantilever switch N-type MESFET grid,
AC signal is carried on cantilever switch, and the cantilever switch is made by titanium/gold/titanium, and cantilever switch Liang Gemao areas make
On semi-insulating GaN substrate, there is pull-down electrode between cantilever switch and substrate, pull-down electrode is covered by silicon nitride material
Lid, the second cantilever switch N-type MESFET, the 3rd cantilever switch N-type MESFET pull-down electrode ground connection, the first cantilever beam is opened
The drain electrode that the pull-down electrode for closing N-type MESFET meets power supply-V2, the first cantilever switch N-type MESFET by high frequency choke coil is led to
Cross lead and high frequency choke coil is connected on power supply+V1；The cantilever switch p-type MESFET that the power amplifier is used is based on GaN
Substrate, its input lead is that, using gold making, source electrode and drain electrode are formed Ohmic contact and constituted by metal and heavy doping P areas, grid
Schottky contacts are formed by Titanium/platinum/billon and p-type active layer to constitute, in cantilever switch p-type MESFET (2) grid
Cantilever switch is left floating above pole, AC signal is carried on cantilever switch, the cantilever switch is made by titanium/gold/titanium,
Cantilever switch Liang Gemao areas are produced on semi-insulating GaN substrate, there is pull-down electrode between cantilever switch and substrate, under
Pulling electrode is covered by silicon nitride material, and cantilever switch p-type MESFET pull-down electrode meets power supply+V2 by high frequency choke coil,
Cantilever switch p-type MESFET drain electrode is connect on power supply-V1 by lead and high frequency choke coil, the first cantilever switch N-type
MESFET and cantilever switch p-type MESFE cantilever switch are connected together by anchor area, lead is used as the class B push-pull formula work(
The input vi of rate amplifier, the first cantilever switch N-type MESFET source electrode and cantilever switch p-type MESFET source electrode connect
Together as output end vo, output end passes through a partiting dc capacitor and LC loops and cross-linked second cantilever switch
N-type MESFET and the 3rd cantilever switch N-type MESFET is connected, and the second cantilever switch N-type MESFET drain electrode passes through lead
It is connected to together and is connected by high frequency choke coil with power supply+V3 with the 3rd cantilever switch N-type MESFET cantilever switch, the
Three cantilever switch N-type MESFET drain electrode is connected to by the cantilever switch of lead and the second cantilever switch N-type MESFET
It is connected together and by high frequency choke coil with power supply+V3, the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type
MESFET formation cross coupling structures, the second cantilever switch NMESFET source electrode and the 3rd cantilever switch N-type MESFET's
Source electrode connects together and is connected with constant-current source, the other end ground connection of constant-current source, and LC loops are connected on the second cantilever switch N-type
Between MESFET and the 3rd cantilever switch N-type MESFET drain electrode, cantilever switch N-type MESFET cantilever switch is width
Beam, the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET cantilever switch are narrow beam.
Cantilever switch MESFET is based on GaN substrate, designs the first cantilever switch N-type MESFET and cantilever switch P
The absolute value of type MESFET threshold V T is equal and │ VT │<│ VA │, while designing the first cantilever switch N-type MESFET
Absolute value with cantilever switch p-type MESFET cantilever beam actuation voltage is Vpullin, │ VA-V2 │<Vpullin<│VA+V2
│, wherein, VA is vi amplitude, because cantilever switch N-type MESFET actuation voltage is than the second cantilever switch N-type
MESFET and the 3rd cantilever switch N-type MESFET is big, and the first cantilever switch N-type MESFET of design cantilever switch is width
Beam, the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET cantilever switch are narrow beam, the Class B
When push-pull amplifier works, AC signal is loaded into the first cantilever switch N-type MESFET and cantilever beam by anchor area
Between the cantilever switch for switching p-type MESFET, when input signal is in positive half period, the first cantilever switch N-type
Voltage is │ VA+V2 │ between MESFET cantilever beam and its pull-down electrode plate, outstanding more than the first cantilever switch N-type MESFET
Arm beam actuation voltage is Vpullin, therefore, and the first cantilever switch N-type MESFET cantilever beam drop-down is opened with the first cantilever beam
The grid for closing N-type MESFET is adjacent to, and the voltage VA being now carried on grid is more than threshold V T, the first cantilever beam N-type
MESFET is turned on, and voltage is │ VA-V2 │ between cantilever switch p-type MESFET cantilever beam and its pull-down electrode plate, is less than
Cantilever beam actuation voltage is Vpullin, therefore cantilever switch p-type MESFET cantilever switch is suspended in grid top,
Therefore cantilever switch p-type MESFET shut-offs, when input signal is in negative half-cycle, situation is then on the contrary, thus make the Class B
The first cantilever switch N-type MESFET and cantilever switch p-type MESFET in push-pull amplifier is with input signal
Change is in alternate conduction and shut-off, the first cantilever switch N-type MESFET and cantilever switch p-type MESFET shut-off meaning
Its cantilever switch and be in suspended state, without grid leakage current；B power amplifier output termination LC loops and friendship
The the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET of coupling are pitched, wherein, the second cantilever switch N
Type MESFET and the 3rd cantilever switch N-type MESFET threshold V T are equal, and the cantilever beam actuation voltage with it
Vpullin is equal；When the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET cantilever switch with
Voltage between pull-down electrode plate is more than the absolute value of threshold V T, and cantilever switch is pulled down on grid, cantilever switch
With grid short circuit, while the voltage between grid and source electrode is also greater than threshold V T, the second cantilever switch N-type MESFET and
Three cantilever switch N-type MESFET are turned on；As the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET
Cantilever switch and pull-down electrode plate between voltage be less than threshold V T, cantilever switch is suspended in above grid,
In cut-off, the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET are in steady operation, two
Second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET alternate conductions and shut-off, when the second cantilever beam is opened
When closing N-type MESFET and the 3rd cantilever switch N-type MESFET shut-offs, cantilever beam is in suspended state, also just without grid leakage
Electric current, so that the power consumption of circuit is reduced, the second cantilever switch N-type MESFET and the 3rd cantilever switch N-type MESFET
Negative resistance can be provided and give LC loops, so that the dead resistance of inductance in LC loops is compensated, so that it is defeated to improve the class B push-pull power amplifier
Go out to hold the quality factor in LC loops, and the MESFET of GaN base has high electron mobility, disclosure satisfy that circuit under radiofrequency signal
The need for normal work.
Beneficial effect：The GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers of the present invention are in work
When making, AC signal is loaded into the outstanding of the first cantilever switch N-type MESFET and cantilever switch p-type MESFET by anchor area
Between arm beam switch, when input signal is in positive half period, the first cantilever switch N-type MESFET cantilever beam is pulled down with it
Voltage is │ VA+V2 │ between battery lead plate, is Vpullin more than cantilever beam actuation voltage, so the first cantilever switch N-type
MESFET cantilever beam drop-down and the first cantilever switch N-type MESFET grid are adjacent to, and are now carried in the voltage on grid
VA is more than threshold V T, and the first cantilever beam N-type MESFET is turned on, and under cantilever switch p-type MESFET cantilever beam and its
Voltage is │ VA-V2 │ between pulling electrode plate, is Vpullin less than cantilever beam actuation voltage, so cantilever switch p-type MESFET
Cantilever switch be suspended in above grid, therefore cantilever switch p-type MESFET is turned off, when input signal is in negative half-cycle
When situation then on the contrary, thus making the first cantilever switch N-type MESFET and the cantilever beam in the class B push-pull power amplifier
P-type MESFET is switched as the change of input signal is in alternate conduction and shut-off, the first cantilever switch N-type MESFET and outstanding
Arm beam switch p-type MESFET shut-off means that its cantilever switch is in suspended state, then also just without grid leakage current,
So as to reduce the power consumption of circuit.Output end LC loops are in parallel to have a cross-linked cantilever switch N-type of negative resistance charactertistic
MESFET is to pipe, two cantilever beam grid N-type MESFET alternatings when the cross-linked cantilever switch N-type MESFET works pipe
Conducting and shut-off, when cantilever beam grid N-type MESFET is turned off, when cantilever switch is in suspended state, greatly reduce grid leakage
Electric current, so as to reduce the power consumption of circuit, while the cross-linked cantilever switch N-type MESFET pipe can be provided negative resistance to
LC loops, so that the dead resistance of inductance in LC loops is compensate for, so as to improve the class B push-pull power amplifier output end
The quality factor in LC loops.And the MESFET of GaN base has high electron mobility, it disclosure satisfy that circuit is normal under radiofrequency signal
Requirements of one's work.
Brief description of the drawings
Fig. 1 is the top view of GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers of the present invention.
Fig. 2 for Fig. 1 GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers P-P ' to section
Figure.
Fig. 3 for Fig. 1 GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers A-A ' to section
Figure.
Fig. 4 for Fig. 1 GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers B-B ' to section
Figure.
Fig. 5 is GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers schematic diagram and remarks form.
Figure includes：First cantilever switch N-type MESFET 1, cantilever beam p-type MESFET2, semi-insulating GaN substrate 3 is defeated
Enter lead 4, grid 5, cantilever switch 6, anchor area 7, battery lead plate 8, silicon nitride layer 9, N-type MESFET drain electrode 12, N-type active layer
11, N-type MESFET source electrode 10, through hole 13, lead 14, p-type active layer 15, p-type MESFET source electrode 16, p-type MESFET's
Drain electrode 17, constant-current source 18, the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20.
Embodiment
The GaN base cantilever switch MESFET high quality factors class B push-pull power amplifier of the present invention is by the first cantilever beam
Switch N-type MESFET1, the second cantilever switch N-type MESFET19, the 3rd cantilever switch N-type MESFET20, cantilever switch
P-type MESFET2 and LC loops are constituted.The first cantilever switch N-type MESFET1, the second cantilever beam that the power amplifier is used
Switch N-type MESFET19, the 3rd cantilever switch N-type MESFET20 and be based on GaN substrate, its input lead 4 is made using gold,
Source electrode 10 and drain electrode 12 are formed Ohmic contact and constituted by metal and heavy doping N areas, and grid 5 is formed by metal and N-type active layer 11
Schottky contacts are constituted, and cantilever switch 6, AC signal loading are left floating in the cantilever switch N-type MESFET top of grid 5
On cantilever switch 6, the cantilever switch 6 is made by titanium/gold/titanium, and the Liang Gemao areas 7 of cantilever switch 6 are produced on semi-insulating
In GaN substrate 3, there is pull-down electrode 8 between cantilever switch 6 and substrate, pull-down electrode 8 is covered by silicon nitride material 9, hang
Arm beam switch N-type MESFET1 pull-down electrode meets power supply-V2, cantilever switch N-type MESFET19 and 20 by high frequency choke coil
Pull-down electrode 8 be grounded, cantilever switch N-type MESFET drain electrode 12 is connected to power supply+V1 by lead 14 and high frequency choke coil
On.The cantilever switch p-type MESFET (2) that the power amplifier is used is based on GaN substrate, and its input lead 4 is to utilize gold conjunction
Gold is made, and source electrode 17 and drain electrode 16 are formed Ohmic contact and constituted by metal and heavy doping P areas, and grid 5 is by metal and p-type active layer
15, which form Schottky contacts, is constituted, and be left floating cantilever switch 6 in cantilever switch p-type MESFET (2) top of grid 5, is handed over
Signal loading is flowed on cantilever switch 6, and the cantilever switch 6 is made by titanium/gold/titanium, and the Liang Gemao areas 7 of cantilever switch 6 make
Make on semi-insulating GaN substrate 3, there is pull-down electrode 8 between cantilever switch 6 and substrate, pull-down electrode 8 is by silicon nitride material
Material 9 is covered, and cantilever switch p-type MESFET2 pull-down electrode 8 meets power supply+V2, cantilever switch p-type by high frequency choke coil
MESFET drain electrode 16 is connect on power supply-V1 by lead 14 and high frequency choke coil, cantilever switch N-type MESFET source electrode and outstanding
Arm beam switch p-type MESFET source electrode is connected together as output end, output termination LC loops and cross-linked second cantilever
Beam switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20.Second cantilever switch N-type MESFET 19, the 3rd
Cantilever switch N-type MESFET 20 pull-down electrode 8 is grounded, and the second cantilever switch N-type MESFET 19 drain electrode 12 passes through
Lead 14 and cantilever switch N-type MESFET20 cantilever switch 6 are connected to together and by high frequency choke coil and power supply+V3 phases
Even, the 3rd cantilever switch N-type MESFET20 drain electrode 12 passes through the outstanding of the cantilever switch N-type MESFET19 of lead 14 and second
Arm beam switch 6 is connected to together and is connected by high frequency choke coil with power supply+V3, the second cantilever switch N-type MESFET 19, the
Three cantilever switch N-type MESFET 20 formation cross coupling structures, LC loops are connected on the second cantilever switch N-type MESFET
19, between the 3rd cantilever switch N-type MESFET 20 drain electrode 12, the first cantilever switch N-type MESFET (1), the second cantilever
Beam switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20 is differed only under their cantilever switch 6
Pull-up voltage is different, and the actuation voltage of cantilever switch 6 is designed as greatly wide beam, the actuation voltage of cantilever switch 6 is small be designed as it is narrow
Beam.
Design the absolute value phase of cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 threshold V T
Deng and │ VT │<│ VA │, while designing the first cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 cantilever
The absolute value of beam actuation voltage is Vpullin, │ VA-V2 │<Vpullin<│ VA+V2 │, VA are Vi amplitudes.The class B push-pull work(
When rate amplifier works, AC signal is loaded into the first cantilever switch N-type MESFET1 and cantilever switch P by anchor area
Between type MESFET2 cantilever switch, when input signal is in positive half period, the first cantilever switch N-type MESFET1's
Voltage is │ VA+V2 │ between cantilever beam and its pull-down electrode plate, is Vpullin more than cantilever beam actuation voltage, so first is outstanding
Arm beam switch N-type MESFET1 the first cantilever beam drop-down and cantilever switch N-type MESFET1 grid are adjacent to, and are now carried in
Voltage VA on grid is more than threshold V T, and the first cantilever beam N-type MESFET1 is turned on, and cantilever switch p-type MESFET2
Cantilever beam and its pull-down electrode plate between voltage be │ VA-V2 │, less than cantilever beam actuation voltage be Vpullin, so cantilever
Beam switch p-type MESFET2 cantilever beam suspends, and has layer of air layer, therefore cantilever switch p-type between cantilever beam and grid
MESFET2 is turned off, and when input signal is in negative half-cycle, situation is then on the contrary, thus make in the class B push-pull power amplifier
The first cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 with input signal change be in alternately lead
Logical and shut-off, the first cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 shut-off means that its cantilever beam is opened
Close and be in suspended state, then also just without grid leakage current, so as to reduce the power consumption of circuit.
B power amplifier output termination LC loops and cross-linked cantilever switch N-type MESFET are handed over pipe
The cantilever switch N-type MESFET coupled is pitched to pipe by the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type
MESFET 20 is constituted, and designs the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20 threshold value
Voltage is equal, while designing the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20 threshold value
Voltage is equal with its cantilever beam actuation voltage, as the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type
Voltage between MESFET 20 cantilever beam and pull-down electrode plate is more than the absolute value of threshold voltage, so cantilever beam is pulled down to
On grid, cantilever beam and grid short circuit, while the voltage between grid and source electrode is also greater than threshold voltage, so the second cantilever beam is opened
N-type MESFET 19 is closed, the 3rd cantilever switch N-type MESFET 20 is turned on, as the second cantilever switch N-type MESFET 19, the
Voltage between three cantilever switch N-type MESFET 20 cantilever beam and pull-down electrode plate is less than threshold voltage, and cantilever beam is outstanding
Float over above grid, in cut-off, the cross-linked cantilever switch N-type MESFET is to pipe in steady operation, and second hangs
Arm beam switch N-type MESFET 19, the alternate conductions of the 3rd cantilever switch N-type MESFET 20 and shut-off, when cantilever switch N-type
MESFET is turned off, and cantilever beam is in suspended state, then also just without grid leakage current, so as to reduce the power consumption of circuit.The friendship
The second cantilever switch N-type MESFET 19 of coupling is pitched, the 3rd cantilever switch N-type MESFET 20 can provide negative resistance to LC
Loop, so that the dead resistance of inductance in LC loops is compensated, so as to improve the class B push-pull power amplifier output end LC loops of the present invention
Quality factor.And the MESFET of GaN base has high electron mobility, circuit normal work under radiofrequency signal disclosure satisfy that
Need.
The preparation method bag of GaN base low-leakage current cantilever switch MESFET high quality factor class B push-pull power amplifiers
Include following steps：
1) semi-insulating GaN substrate is prepared；
2) deposit silicon nitride, one layer of silicon nitride is grown with plasma-enhanced chemical vapour deposition technique (PECVD),
Then photoetching and etch silicon nitride, remove the silicon nitride of N-type MESFET active areas；
3) N-type MESFET active areas ion implanting：Inject after phosphorus, anneal in a nitrogen environment；After the completion of annealing, in high temperature
Lower carry out N+Dopant redistribution, forms the N-type active layer of N-type MESFET active areas；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) photoetching grid region, removes the photoresist in grid region；
6) electron beam evaporation titanium/platinum/gold；
7) titanium/platinum/gold on photoresist and photoresist is removed；
8) heat, make titanium/platinum/billon and N-type GaN active layers formation Schottky contacts；
9) photoresist is coated, photoetching simultaneously etches N-type MESFET source electrodes and the photoresist of drain region；
10) heavily doped N-type impurity is injected, the N-type heavily doped region formed in N-type MESFET source electrodes and drain region, injection
Short annealing processing is carried out afterwards；
11) photoetching source electrode and drain electrode, remove lead, source electrode and the photoresist of drain electrode；
12) it is evaporated in vacuo gold germanium ni au；
13) the gold germanium ni au on photoresist and photoresist is removed；
14) alloying formation Ohmic contact, forms lead, source electrode and drain electrode；
15) photoresist is coated, the photoresist of the anchor zone position of input lead, battery lead plate and cantilever beam is removed；
16) evaporation first layer gold, its thickness is about 0.3 μm；
17) gold on photoresist and photoresist is removed, the anchor area of input lead, battery lead plate and cantilever beam is preliminarily formed；
18) deposit silicon nitride：Grown with plasma-enhanced chemical vapour deposition technique (PECVD)Thick
Silicon nitride medium layer；
19) photoetching and etch nitride silicon dielectric layer, are retained in the silicon nitride on battery lead plate；
20) deposit and photoetching polyimide sacrificial layer：The polyimides sacrifice of 1.6 μ m-thicks is coated in gallium arsenide substrate
Layer, it is desirable to fill up pit；Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam；
21) titanium/gold/titanium is evaporated, its thickness is 500/1500/：Evaporate the down payment for plating；
22) photoetching：The photoresist in place will be electroplated by removing；
23) gold is electroplated, its thickness is 2 μm；
24) photoresist is removed：The photoresist in place need not be electroplated by removing；
25) titanium/gold/titanium is anti-carved, corrodes down payment, cantilever beam is formed；
26) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under cantilever beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
Difference with the prior art of the present invention is：
GaN base low-leakage current cantilever switch MESFET class B push-pull power amplifiers are pushed away with traditional Class B in the present invention
The maximum difference of power amplifier is drawn to be to be designed with cantilever beam structure above cantilever switch MESFET used grid,
Schottky contacts are formd between MESFET grid and substrate, depletion layer are formed in square substrate under the gate.Design first
The absolute value of cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 threshold V T is equal and │ VT │<│
VA │, while design the first cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 cantilever beam actuation voltage
Absolute value is Vpullin, │ VA-V2 │<Vpullin<│ VA+V2 │, VA are Vi amplitudes.The class B push-pull power amplifier works
When, AC signal is loaded into the outstanding of the first cantilever switch N-type MESFET1 and cantilever switch p-type MESFET2 by anchor area
Between arm beam switch, when input signal is in positive half period, under the first cantilever switch N-type MESFET1 cantilever beam and its
Voltage is │ VA+V2 │ between pulling electrode plate, is Vpullin more than cantilever beam actuation voltage, so the first cantilever switch N-type
MESFET1 cantilever beam drop-down and the first cantilever switch N-type MESFET1 grid are adjacent to, and are now carried in the electricity on grid
Press VA be more than threshold V T, the first cantilever beam N-type MESFET1 conducting, and cantilever switch p-type MESFET2 cantilever beam with
Voltage is │ VA-V2 │ between its pull-down electrode plate, is Vpullin less than cantilever beam actuation voltage, so cantilever switch p-type
MESFET2 cantilever beam is suspended in above grid, therefore cantilever switch p-type MESFET2 is turned off, when input signal is in negative half
Situation is then on the contrary, thus make the first cantilever switch N-type MESFET1 in the class B push-pull power amplifier and outstanding during the cycle
Arm beam switchs p-type MESFET2 and is in alternate conduction and shut-off, the first cantilever switch N-type with the change of input signal
MESFET1 and cantilever switch p-type MESFET2 shut-off mean that its cantilever switch is in and are suspended in above grid, then
Also just without grid leakage current, so as to reduce the power consumption of circuit.B power amplifier output termination LC loops and intersection
The cantilever switch N-type MESFET of coupling is to pipe, and cross-linked cantilever switch N-type MESFET is opened by the second cantilever beam pipe
N-type MESFET 19 is closed, the 3rd cantilever switch N-type MESFET 20 is constituted, designs the second cantilever switch N-type MESFET 19,
3rd cantilever switch N-type MESFET 20 threshold voltage is equal, while the second cantilever switch N-type MESFET 19 is designed,
3rd cantilever switch N-type MESFET 20 threshold voltage is equal with its cantilever beam actuation voltage, when the second cantilever switch
Voltage between N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20 cantilever beam and pull-down electrode plate is more than threshold value electricity
The absolute value of pressure, so cantilever beam is pulled down on grid, cantilever beam and grid short circuit, while the voltage between grid and source electrode
More than threshold voltage, so the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20 are turned on, when
Outstanding second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET 20 cantilever beam and pull-down electrode plate it
Between voltage be less than threshold voltage, cantilever beam is suspended in above grid, in cut-off, the cross-linked cantilever switch N
Type MESFET to pipe in steady operation, the second cantilever switch N-type MESFET 19, the 3rd cantilever switch N-type MESFET
20 alternate conductions and shut-off, when cantilever switch N-type MESFET shut-offs, cantilever beam is in suspended state, then also just without grid
Pole leakage current, so as to reduce the power consumption of circuit.The cross-linked second cantilever switch N-type MESFET 19, the 3rd cantilever
Beam switch N-type MESFET 20 can provide negative resistance and give LC loops, so that the dead resistance of inductance in LC loops is compensated, so as to carry
The quality factor in the class B push-pull power amplifier output end LC loops of the high present invention.And the MESFET of GaN base has high electron mobility
Rate, disclosure satisfy that under radiofrequency signal the need for circuit normal work.
The structure for meeting conditions above is considered as the GaN base low-leakage current cantilever switch MESFET class B push-pulls of the present invention
Power amplifier.
Claims (2)
1. a kind of gallium nitride base low-leakage current cantilever switch class B push-pull power amplifier, it is characterised in that the power amplifier
By the first cantilever switch N-type MESFET (1), the second cantilever switch N-type MESFET (19), the 3rd cantilever switch N-type
MESFET (20) and cantilever switch p-type MESFET (2), constant-current source (18), LC loops are constituted, the power amplifier use the
One cantilever switch N-type MESFET (1), the second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET
(20) GaN substrate is based on, its input lead (4) is that source electrode (10) and drain electrode (12) are by metal and heavy doping N areas using gold making
Form Ohmic contact to constitute, grid (5) is formed Schottky contacts and constituted by titanium-platinum-gold alloy and N-type active layer (11), outstanding
Cantilever switch (6) is left floating above arm beam switch N-type MESFET grid (5), AC signal is carried in cantilever switch (6)
On, the cantilever switch (6) is made by titanium-gold-titanium, and cantilever switch (6) Liang Gemao areas (7) are produced on semi-insulating GaN substrate
(3) on, there is pull-down electrode (8) between substrate in cantilever switch (6), pull-down electrode (8) is covered by silicon nitride material (9)
Lid, the second cantilever switch N-type MESFET (19), the 3rd cantilever switch N-type MESFET (20) pull-down electrode (8) ground connection,
First cantilever switch N-type MESFET (1) pull-down electrode meets power supply-V2, the first cantilever switch N-type by high frequency choke coil
MESFET (1) drain electrode (12) is connected on power supply+V1 by lead (14) and high frequency choke coil；It is outstanding that the power amplifier is used
Arm beam switch p-type MESFET (2) is based on GaN substrate, and its input lead (4) is to utilize gold making, source electrode (17) and drain electrode (16)
Formed Ohmic contact by metal and heavy doping P areas and constituted, grid (5) is by Titanium-platinum-gold alloy and p-type active layer (15) shape
Constituted into Schottky contacts, cantilever switch (6) is left floating above cantilever switch p-type MESFET (2) grid (5), handed over
Signal loading is flowed on cantilever switch (6), and the cantilever switch (6) is made by titanium-gold-titanium, (6) two anchors of cantilever switch
Area (7) is produced on semi-insulating GaN substrate (3), there is pull-down electrode (8), drop-down electricity between substrate in cantilever switch (6)
Pole (8) is covered by silicon nitride material (9), and cantilever switch p-type MESFET (2) pull-down electrode (8) is connect by high frequency choke coil
Power supply+V2, cantilever switch p-type MESFET drain electrode (16) are connect on power supply-V1 by lead (14) and high frequency choke coil, and first
Cantilever switch N-type MESFET (1) and cantilever switch p-type MESFET (2) cantilever switch (6) passes through anchor area (7), lead
(4) the input vi connected together as the class B push-pull power amplifier, the first cantilever switch N-type MESFET (1) source
Pole (10) and cantilever switch p-type MESFET (2) source electrode (17) are connected together as output end vo, output end by one every
DC capacitor and LC loops and cross-linked second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type
MESFET (20) is connected, and the second cantilever switch N-type MESFET (19) drain electrode (12) passes through lead (14) and the 3rd cantilever beam
Switch N-type MESFET (20) cantilever switch (6) is connected to together and is connected by high frequency choke coil with power supply+V3, and the 3rd hangs
Arm beam switch N-type MESFET (20) drain electrode (12) is hanged by lead (14) and the second cantilever switch N-type MESFET's (19)
Arm beam switch (6) is connected to together and is connected by high frequency choke coil with power supply+V3, the second cantilever switch N-type MESFET (19)
With the 3rd cantilever switch N-type MESFET (20) formation cross coupling structures, the second cantilever switch NMESFET (19) source electrode
(10) connect together and be connected with constant-current source (18) with the 3rd cantilever switch N-type MESFET (20) source electrode (10), constant-current source
(18) other end ground connection, LC loops are connected on the second cantilever switch N-type MESFET (19) drain electrode (12) and the 3rd cantilever beam
Between the drain electrode (12) for switching N-type MESFET (20), the first cantilever switch N-type MESFET (1) cantilever switch (6) is width
Beam, the second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) cantilever switch (6) is
Narrow beam.
2. gallium nitride base low-leakage current cantilever switch class B push-pull power amplifier according to claim 1, its feature
Be, design the first cantilever switch N-type MESFET (1) and cantilever switch p-type MESFET (2) threshold V T it is absolute
It is worth equal and │ VT │<│ VA │, while designing the first cantilever switch N-type MESFET (1) and cantilever switch p-type MESFET
(2) absolute value of cantilever beam actuation voltage is Vpullin, │ VA-V2 │<Vpullin<│ VA+V2 │, wherein, VA is vi width
Value, because cantilever switch N-type MESFET (1) actuation voltage is more outstanding than the second cantilever switch N-type MESFET (19) and the 3rd
AC signal greatly, when the class B push-pull power amplifier works, is loaded into the by arm beam switch N-type MESFET (20) by anchor area
Between one cantilever switch N-type MESFET (1) and cantilever switch p-type MESFET (2) cantilever switch, at input signal
When positive half period, voltage is │ VA+V2 between the first cantilever switch N-type MESFET (1) cantilever beam and its pull-down electrode plate
│, the cantilever beam actuation voltage more than the first cantilever switch N-type MESFET (1) is Vpullin, therefore, the first cantilever switch
N-type MESFET (1) cantilever beam drop-down and the first cantilever switch N-type MESFET (1) grid are adjacent to, and are now carried in grid
On voltage VA be more than threshold V T, the first cantilever beam N-type MESFET (1) conductings, and cantilever switch p-type MESFET (2)
Cantilever beam and its pull-down electrode plate between voltage be │ VA-V2 │, be Vpullin, therefore cantilever less than cantilever beam actuation voltage
Beam switch p-type MESFET (2) cantilever switch is suspended in above grid, therefore cantilever switch p-type MESFET (2) is closed
Disconnected, when input signal is in negative half-cycle, situation is then on the contrary, thus make first in the class B push-pull power amplifier to hang
Arm beam switch N-type MESFET (1) and cantilever switch p-type MESFET (2) with input signal change be in alternate conduction and
Shut-off, the first cantilever switch N-type MESFET (1) and cantilever switch p-type MESFET (2) shut-off means that its cantilever beam is opened
Close and be in suspended state, without grid leakage current；Class B push-pull power amplifier output terminates LC loops and cross-linked
Second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20), wherein, the second cantilever switch N
Type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) threshold V T are equal, and are pulled down with its cantilever beam
Voltage Vpullin is equal；When the second cantilever switch N-type MESFET's (19) and the 3rd cantilever switch N-type MESFET (20)
Voltage between cantilever switch (6) and pull-down electrode plate (8) is more than the absolute value of threshold V T, and cantilever switch (6) is by under
Move on grid (5), cantilever switch (6) and grid (5) short circuit, at the same the voltage between grid (6) and source electrode (10) also greater than
Threshold V T, the second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) conductings；When
Two cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) cantilever switch (6) and drop-down electricity
Voltage between pole plate (8) is less than threshold V T, and cantilever switch (6) is suspended in above grid (5), in cut-off, should
Second cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) are in steady operation, two second
Cantilever switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) alternate conductions and shut-off, when the second cantilever
During beam switch N-type MESFET (19) and the 3rd cantilever switch N-type MESFET (20) shut-offs, cantilever beam is in suspended state,
Just without grid leakage current, so that the power consumption of circuit is reduced, the second cantilever switch N-type MESFET (19) and the 3rd cantilever
Beam switch N-type MESFET (20) can provide negative resistance and give LC loops, so that the dead resistance of inductance in LC loops is compensated, so as to carry
The quality factor in height class B push-pull power amplifier output end LC loops, and the MESFET of GaN base has high electron mobility, can
Meet under radiofrequency signal the need for circuit normal work.
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| CN101251426A (en) * | 2007-12-28 | 2008-08-27 | 中国科学院上海微系统与信息技术研究所 | Piezoresistance structure of MOS capacitance substrate on nano beam as well as detecting method |
| CN102956693A (en) * | 2012-11-01 | 2013-03-06 | 无锡中星微电子有限公司 | FINFET (Fin-Field-Effect-Transistor) and application circuit applying FIFET |
| CN103765765A (en) * | 2011-08-29 | 2014-04-30 | 国立大学法人电气通信大学 | High-efficiency power amplifier |
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| US6816532B2 (en) * | 2001-05-15 | 2004-11-09 | Fuji Photo Film Co., Ltd. | Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of ho3+, sm3+, eu3+, dy3+, er3+, and tb3+is excited with gan-based compound laser diode |
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| CN101251426A (en) * | 2007-12-28 | 2008-08-27 | 中国科学院上海微系统与信息技术研究所 | Piezoresistance structure of MOS capacitance substrate on nano beam as well as detecting method |
| CN103765765A (en) * | 2011-08-29 | 2014-04-30 | 国立大学法人电气通信大学 | High-efficiency power amplifier |
| CN102956693A (en) * | 2012-11-01 | 2013-03-06 | 无锡中星微电子有限公司 | FINFET (Fin-Field-Effect-Transistor) and application circuit applying FIFET |
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