CN101251426A - Piezoresistance structure of MOS capacitance substrate on nano beam as well as detecting method - Google Patents
Piezoresistance structure of MOS capacitance substrate on nano beam as well as detecting method Download PDFInfo
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Abstract
The invention provides a piezoresistive structure and a detection method with an MOS capacitance substrate to realize the piezoresistive detection of the deflection of a nano-thickness beam. The invention prepares the MOS capacitance structure on the semiconductor nano-thickness beam. During the detection, a voltage is applied on the MOS capacitance to form a strong inversion layer and a space charge region under the MOS capacitance in the nano beam. The non-conductive space charge region enables a substrate resistance below the space charge region to be asymmetric relative to the neutral plane of the beam and serve as a force sensing resistor to be used for the measurement of the deflection of the nano beam. As the space charge region reaches the greatest depth after the strong inversion layer is formed, the resistance value of the MOS capacitance substrate force-sensing resistor does not change with a grid voltage to avoid the sensitivity reduction caused by inverse signal feedback of the prior MOS channel piezoresistive structure, and the anti-interference capacity is strong. The MOS capacitance substrate piezoresistive structure provided by the invention also avoids the manufacturing problem of heavy doping and shallow junction which has to be solved in preparing the force sensing resistance on the nano beam.
Description
Technical field
The present invention relates to a kind of is to utilize Metal-oxide-semicondutor (Metal Oxide Semiconductor, MOS) the pressure drag structure of electric capacity substrate and utilize piezoresistive effect to realize method to the detection of nano beam bending on the beam of nanometer scale at thickness.Belong to sensor field.
Background technology
(Nano Electro Mechanical System is that (Micro Electro Mechanical System, development MEMS) is the important component part of nanometer technology to micro-electromechanical technology NEMS) to receive the Mechatronic Systems technology.Owing to nano effects such as the surface effect of having utilized nano-scale structures, scale effect can be realized new device, realize the remarkable lifting (K.L.Ekinci of existing device performance, M.L.Roukes.Nanoelectromechanical systems.Review of Scientific Instruments, Vol.76,061101,2005.) (Miles Blencowe.Quantum electromechanical systems.PhysicsReports, Volume 395, Issue 3, May 2004, pp.159-222).
The described nanoscale scope of the application is≤200nm, and this characteristic dimension is to receive basic structure in the Mechatronic Systems technology in the girder construction of nanometer scale.Little/displacement, vibration etc. of Mechatronic Systems structure received generally all can cause deflection of beam.Therefore bending is the important way of the little/Mechatronic Systems central sill of receiving motion.Direction with beam deflection is defined as thickness direction herein.The nano beam of indication is meant the beam of the yardstick of bending direction in nanometer scale herein.
Because the characteristic dimension of nano mechanical device is little, cause the difficulty height of displacement detecting.Technology such as traditional capacitance detecting, pressure drag detection face a series of problem.For example, electrode size is that 40 μ m * 10 μ m, gap are the structure of 1 μ m, and its electric capacity only is 3.5fF, and the electric capacity of nanostructured is generally 10
-18The F magnitude, much smaller than stray capacitance (K.L.Ekinci, M.L.Roukes.Nanoelectromechanical systems.Review of Scientific Instruments, Vol.76,061101,2005.), the difficulty of capacitance detecting is high.Conventional detection mainly contains electromagnetic detection (X.M.H.Huang, C.A.Zorman, M.Mehregany, M.L.Roukes.Nanodevice motion in microwave frequencies.Nature, Vol.421,30 Jan.2003, p.496.), optical measuring method (B.Ilic, Y.Yang, K.Aubin, R.Reichenbach, S.Krylov, H.G.Craighead.Enumeration of DNA Molecules Boundto a Nanomechanical Oscillator.Nano Lett.Vol.5,2005, pp.925-9.) etc.Electromagnetic Testing Technology can realize the measurement to high-frequency signal, and measuring accuracy is also higher, uses comparatively extensive.But, need very strong magnetic field and could realize measuring (X.M.H.Huang, C.A.Zorman because the displacement of nanostructured is little, M.Mehregany, M.L.Roukes.Nanodevice motion in microwavefrequencies.Nature, Vol.421,30Jan.2003, p.496.).And adopt the electromagnetic detection of high-intensity magnetic field generally to be difficult to integrated.Optical interference measuring method is kind of a method comparatively commonly used under micron.But laser facula is generally in micron dimension, and along with the yardstick of beam is reduced to nanometer scale, the reflection of light intensity on the nano beam is more and more littler, makes detection system need complex apparatus just can finish, and optical detection can't realize also that usually monolithic is integrated.
The pressure drag detection technique is a detection method commonly used in the MEMS (micro electro mechanical system), obtained widespread use, as AFM (M.Tortonese, R.C.Barrett, and C.F.Quate, Atomic resolution with anatomic force microscope using piezoresistive detection, Appl.Phys.Lett., Vol.62, No.8,22 February 1993, PP.834-836), data-carrier store (H.J.Mamin, R.P.Ried, B.D.Terris, and D.Rugar, High-Density Data Storage Based on the Atomic ForceMicroscope, Proc.IEEE 87,1014 (1999)).The pressure drag detection technique is to utilize the characteristic of the resistivity of semiconductor resistor with STRESS VARIATION, measures deflection of beam by measuring the semiconductor resistor resistance of making on the beam with the STRESS VARIATION of resistance present position.The semiconductor resistor that is used for the pressure drag detection is commonly referred to force sensing resistance.
Because it is the stress of directly measuring the force sensing resistance place that pressure drag detects, its sensitivity is directly related with the size of distribution of beam upper stress and force sensing resistance.The beam upper stress distributes when therefore being necessary to recall beam deflection.When a two-end fixed beam or semi-girder are crooked and crooked than cantilever thickness when little, can think to have a neutral surface in the beam, the neutral surface internal stress is 0, neutral surface is the integration equal and opposite in direction opposite in sign of two-part stress up and down.Absolute value apart from neutral surface then stress far away more is big more.The maximal value of stress absolute value appears on upper and lower two surfaces of beam.For the homogeneous beam of square-section, neutral surface is positioned at half place of thickness of beam, equates but opposite in sign with respect to any 2 stress intensities of the upper and lower symmetry of neutral surface.(M.H.Bao，Micro?Mechanical?Transducers，ELSEVIER，2000)。When make length on beam is L
R, width is W
R, thickness is h
RForce sensing resistance the time, the variation of resistance value reflection be L
R* W
R* h
RStress mean value in the zone.In order to obtain higher sensitivity, force sensing resistance should be produced on a side of neutral surface.When force sensing resistance is crossed over neutral surface,, sensitivity is reduced because neutral surface both sides stress sign partial offset occurs mutually on the contrary.When force sensing resistance thickness equals cantilever thickness, be 0 to the sensitivity of beam deflection.Because the maximal value of stress absolute value appears at the surface of beam, increase with the degree of depth and to reduce, be reduced to 0 to neutral surface, so force sensing resistance thickness is high more with respect to the thin more then sensitivity of thickness of beam.On the other hand, resistance thickness attenuation meeting causes that resistance increases, thereby causes the increase of thermonoise, must increase doping content when reducing resistance thickness.
For nano beam, because the thickness of beam is in nanometer scale, the junction depth of force sensing resistance must could obtain higher sensitivity much smaller than the thickness of nano beam.The difficulty height of the preparation resistance that junction depth is shallow, concentration is high.A lot of methods have been developed for increasing the nanostructured piezoresistive effect in recent years, but all very complicated (Y.Su of technology, A.G.R Evans, A.Brunnschweiler, G.Ensell, M.Koch, " Fabrication of improvedpiezoresistive silicon cantilever probes for the atomic force microscope " Sensorsand Actuators A, vol.60, pp.163-167,1997.) (M.Despont, H.Takahashi, S.Ichihara, Y.Shirakawabe, N.Shimizu, A.Inoue, W.Haberle, G.K.Binnig, P.Vettiger, " Dual-cantilever AFM probe for combining fast and coarse imagingwith high resolution imaging " Proceedings of MEMSconference, 2000, pp.126-131.).
Yet, utilize the piezoresistive effect of MOS raceway groove can realize the detection of counter stress, be developed at present sensor (the Vitor Garcia that multiple employing MOS raceway groove pressure drag detects, Fabiano Fruett.Amechanical-stress sensitive differential amplifier.Sensors and Actuators, A132,2006, pp.8-13.) (D.Lange, C.Hagleitner, C.Herzog, O.Brand, H.Baltes.Electromagnetic actuation and MOS-transistor sensing for CMOS-integratedmicromechanical resonators.Sensors andActuators, A103,2003, PP.150-155).Because the very thin thickness of MOS raceway groove, carrier concentration depend on grid voltage rather than form by mixing, and can avoid the making difficult problem of high concentration shallow junction force sensing resistance, are important channels that solves the detection of nano thickness beam pressure drag.
The subject matter that MOS raceway groove pressure drag detects has 3 points.(1) metal-oxide-semiconductor is a kind of transistor with amplification, and the subtle change of grid voltage can cause the marked change of channel impedance, so poor anti jamming capability.(2) metal-oxide-semiconductor need be connected into electric bridge for realizing that pressure drag detects, and there is negative feedback in the MOS electric bridge, can cause the remarkable decline of pressure drag sensitivity.The sensitivity that Theoretical Calculation shows enhancement mode metal-oxide-semiconductor electric bridge is less than half of force sensing resistance electric bridge.When (3) nano beam was crooked, maximum stress appeared at the surface, along with the increase stress of the degree of depth descends rapidly.And the metal-oxide-semiconductor design feature has determined raceway groove can't be produced on the surface, causes sensitivity to descend.
Utilize the piezoresistive effect of technotron (JFET) raceway groove can realize that also the pressure drag of nano beam detects.But also there is the problem of MOS raceway groove pressure drag similar in JFET raceway groove pressure drag structure, promptly to the responsive poor anti jamming capability of grid voltage, have negative feedback meeting desensitization etc.
Summary of the invention
The present invention proposes a kind of Novel MOS electric capacity substrate pressure drag structure and utilizes piezoresistive effect to realize the method that nano beam is detected.The present invention does not need to make metal-oxide-semiconductor and only need make mos capacitance, applying voltage on mos capacitance makes under the mos capacitance and to form strong inversion layer and space charge region in the nano beam, utilize the space charge region that forms under the mos gate oxide layer to change the symmetry of resistance substrate, adopt the resistance substrate under the space charge region to realize that as force sensing resistance the pressure drag of nano beam detects with respect to neutral surface.Utilize the raceway groove that forms under the mos gate oxide layer to realize shielding, thereby poor anti jamming capability, the negative feedback avoiding existing in the existing metal-oxide-semiconductor raceway groove pressure drag structure cause degradation shortcoming under the sensitivity to the mos gate pole tension.By suitable design doping content and cantilever thickness, mos capacitance substrate force sensing resistance can be produced on the nano beam lower surface, and resistance thickness can be much smaller than nanometer cantilever thickness.
Mos capacitance substrate pressure drag structure as shown in Figure 1 on the nano beam.Fig. 1 (a) is a side view, and Fig. 1 (b) is a vertical view.The two ends of nano beam 1 are connected with anchor point 2, can be freely in y direction and the vibration of z direction.Because the thickness of described nano beam is in nanometer scale, width is greater than thickness, so the fundamental vibration direction of nano beam is along the z direction.Nano beam is a semiconductor material, the most frequently used silicon materials.But method of the present invention is not limited only to silicon materials, and the semiconductor material that has the pressure drag characteristic for germanium etc. all is suitable for.Under nano beam and press welding block, make uniform doped region 3.Doped region can be P type or N type, needs decision by design.Doped region forms mos capacitance under grid 5, gate oxide 4 and the gate oxide.Grid is drawn by gate metal lead-in wire 6 realization electricity.Field oxide 7 thickness under the gate metal lead-in wire are greatly to reduce the stray capacitance between metal lead wire and nano beam.Making the electricity of resistance electrode A and resistance electrode B realization nano beam on the doped region of nano beam two ends respectively draws.When the voltage between grid and doped region is 0 to be voltage on the mos capacitance when being 0, and the resistance between electrode A and B just equals nano beam resistance and two ends resistance sum.This moment, this resistance did not change with beam deflection, because the piezoresistive effect that two parts stress produces about the neutral surface is cancelled out each other.Therefore when voltage on the mos capacitance was 0, the resistance between electrode A and B did not change with beam deflection.
Mos capacitance claims end electric resistance structure further to simplify on the nano beam provided by the present invention, as adopt the floating boom replacement gate or in gate oxide, introduce the oxide layer fixed charge and oxide trapped charge formation strong inversion layer omission grid, and replace (seeing embodiment for details) such as above-mentioned two-end fixed beams with semi-girder or V-type beam.When utilizing above-mentioned pressure drag structure to detect, on mos capacitance, apply voltage.Apply the polarity of voltage and the threshold voltage V of mos capacitance
TIdentical, relevant with the nano beam doping type.For the nano beam that the P type mixes, the relative nano beam of grid voltage is for just.For the nano beam that the N type mixes, the relative nano beam of grid voltage is for negative.Apply the absolute value of the absolute value of voltage greater than threshold voltage, | V|＞| V
T|.The voltage that applies forms strong inversion layer 10 at the nano beam surface induction, and the nano beam strong inversion layer that mixes for the P type is the N type, and the nano beam strong inversion layer that mixes for the N type is P type (Shi Min, semiconductor devices physics and technology, publishing house of University Of Suzhou, 2002).The strong inversion layer is space charge region 11 down, as shown in Figure 2.The space charge region is nonconducting.Resistance under nonconducting space charge region is asymmetric up and down with respect to neutral surface, and its resistance value can change with stress, can be used to measure the nanometer deflection of beam, and this part resistance is exactly mos capacitance substrate force sensing resistance of the present invention.The piezoresistive effect of this force sensing resistance is exactly the piezoresistive effect of mos capacitance substrate.This structure is exactly a mos capacitance substrate pressure drag structure.
The resistance of mos capacitance substrate force sensing resistance is
ρ is the resistivity of doped region in the formula, and L and W are the length and the width of space charge region, and h is the thickness of nano beam, h
CBe strong inversion layer thickness, h
DThickness for the space charge region.h
CWith respect to h and h
DGenerally can ignore.According to Physics of Semiconductor Devices (Shi Min, semiconductor devices physics and technology, publishing house of University Of Suzhou, 2002), when the voltage on the mos capacitance equaled threshold voltage, space charge region thickness reached maximal value, h
DMContinue to increase absolute value of voltage and can not change h
DMAnd only be to increase carrier concentration in the inversion layer.That is to say voltage on grid and V
TIdentical and the absolute value of symbol is greater than | V
T| the time, inversion layer has shielded absolute value greater than | V
T| the effect of voltage of part makes the variation of grid voltage can not influence the thickness of space charge region.Therefore, the operating voltage on grid is identical with the threshold voltage symbol, and absolute value is during greater than the threshold voltage absolute value, and the resistance of mos capacitance substrate force sensing resistance does not change with grid voltage, promptly
R
s＝ρχ
Wherein
The piezoresistive effect of mos capacitance substrate force sensing resistance is mainly derived from electricalresistivity's variation, and χ can be similar to and think constant.Because the closer to the beam surface, stress value is big more, the thickness that suitably designs nano beam and space charge region makes h-h
DMI is to improve the sensitivity that pressure drag detects as far as possible.
The maximum ga(u)ge of space charge region is by nano beam doping content decision (Shi Min, semiconductor devices physics and technology, publishing house of University Of Suzhou, 2002)
ε in the formula
sBe the relative dielectric constant of silicon or germanium, ε
0Be permittivity of vacuum, k is a Boltzmann constant, and T is a temperature, and N is a majority carrier concentration, n
iBe the intrinsic electron concentration, q is an electronic charge.Other parameters are constant except that N and T.That is to say when temperature fixedly the maximum ga(u)ge of time space charged region only determine by the nano beam doping content.By design thickness of nano beam and the size that the nano beam doping content can be set resistance substrate, also just set the resistance of this resistance when unstressed.
The mos capacitance resistance substrate can obtain by the resistance between measuring resistance electrode A and B.In order to reduce the dead resistance of series connection, heavily doped region can be made, as shown in Figure 3 at the grid two ends.The doping type of heavily doped region 13 extremely descends doped region identical with mos gate.Because carrier concentration height and resistance width and thickness are big, can be similar to and think that electrode 1 and 2 s' resistance just equals the mos capacitance resistance substrate.
R
t≈R
s
Metering circuit is identical with general pressure drag metering circuit, can adopt (M.H.Bao, Micro Mechanical Transducers, ELSEVIER, 2000) such as resistance bridges.
Relation between mos capacitance substrate force sensing resistance and stress is identical with general semiconductor force sensing resistance rule, does not repeat them here.Calculating for the pressure drag characteristic comprises that doping type, crystal orientation, piezoresistance coefficient, sensitivity etc. can be referring to " Micro Mechanical Transducers " (M.H.Bao, ELSEVIER, 2000).
Advantage of the present invention is:
(1) avoided the difficulty of the shallow doping of high concentration
(2) than MOS raceway groove pressure drag, mos capacitance substrate force sensing resistance when work resistance do not change with grid voltage, that is to say the modulating action that does not have grid voltage, avoided the muting sensitivity that causes because of negative feedback, and antijamming capability is strong.Mos capacitance substrate pressure drag structure is also simple in structure than MOS raceway groove pressure drag in addition.MOS raceway groove pressure drag structure is identical with metal-oxide-semiconductor, basic metal-oxide-semiconductor comprises source electrode, drain electrode, grid and substrate four parts, the doping type of source electrode and drain electrode is opposite with the doping type of grid lower area, that is to say if source electrode and drain electrode when the P type, grid is the N type down.And in the structure that this patent proposes, the doping type on the nano beam is identical.
(3) the invention provides on semiconductor nano thickness beam and to make the mos capacitance structure, on mos capacitance, apply voltage during detection and make and form strong inversion layer and space charge region under the mos capacitance in the nano beam.Nonconducting space charge region makes the resistance substrate of its below asymmetric with respect to the beam neutral surface, can be used as the measurement that force sensing resistance is used for the nanometer deflection of beam.Because after forming the strong inversion layer, the space charge region reaches depth capacity, the resistance of mos capacitance substrate force sensing resistance does not change with grid voltage, and the sensitivity of having avoided causing because of negative feedback in the existing MOS raceway groove pressure drag structure descends, and antijamming capability is strong.The mos capacitance substrate pressure drag structure that provides has also avoided making on the nano beam the essential heavy doping shallow junction making difficult problem that solves of force sensing resistance institute.
Description of drawings
Mos capacitance substrate pressure drag structure on Fig. 1 nano beam.Fig. 1 (a) is a side view, and Fig. 1 (b) is a vertical view.
Fig. 2 forms structural representation behind the strong inversion layer.
Fig. 3 grid two ends make heavily doped region to reduce parasitic resistance in series.(a) being side view, (b) is vertical view.
Fig. 4 adopts the mos capacitance substrate pressure drag structure of floating boom.(a) being side view, (b) is vertical view.
Fig. 5 has omitted the mos capacitance substrate pressure drag structure of grid.(a) being side view, (b) is vertical view.
Fig. 6 utilizes the mos capacitance substrate pressure drag structure of interfacial charge.(a) being side view, (b) is vertical view.
Fig. 7 light doping section and heavily doped region width are less than the mos capacitance substrate pressure drag structure of nano beam width.(a) being side view, (b) is vertical view.
Mos capacitance substrate pressure drag structure on Fig. 8 nano thickness semi-girder.
1. nano beam among the figure, 2. anchor point, 3. light doping section, 5. grid, 6. gate metal lead-in wire, 7. field oxide, 8. resistance electrode A, 9. resistance electrode B, 10. strong inversion layer, 11. space charge region, 12.MOS electric capacity claims end resistance, 13. heavily doped regions, 14. floating booms, 15. the insulation course on the gate oxide, 16. interfaces.
Embodiment
Further specify substantive distinguishing features of the present invention and obvious improvement below in conjunction with accompanying drawing, but the present invention only is confined to embodiment by no means.
Fig. 1 claims the pressure drag structure at the end for mos capacitance on the nano beam
The two ends of nano beam 1 are connected with anchor point 2 respectively, and in y direction or the free vibration of z direction; Be manufactured with doped region 3 under nano beam 1 and press welding block, doped region is P type or N type; Doped region 3 under grid 5, gate oxide 4 and the gate oxide forms mos capacitance, and grid 5 is drawn by metal lead wire 6 realization electricity; The doped region at nano beam two ends is made the electricity of resistance electrode 8 and 9 realization nano beam respectively and is drawn.
Fig. 2 is a structural representation behind the formation strong inversion layer.10 is that strong inversion layer 11 is the space charge region among the figure.Owing to make the space charge region reach depth capacity after forming the strong inversion layer, be used for the flexural measurement of nano beam as force sensing resistance.
Yet mos capacitance substrate pressure drag structure shown in Figure 1 can further be simplified.Because the effect of grid only is to make formation inversion layer and space charge region under the gate oxide, can simplify the design of grid.For example, adopt the floating gate structure of using in the erasable non-volatility memorizer can produce same effect.The mos capacitance substrate pressure drag structure of employing floating gate structure as shown in Figure 4.The grid of mos capacitance does not go between and is connected with extraneous among Fig. 4, is called floating boom.By injecting or method such as electricity rewriting is introduced the electric charge of capacity on floating boom, make grid voltage and absolute value identical greater than the threshold voltage absolute value with the threshold voltage symbol, just can obtain the mos capacitance substrate force sensing resistance identical with Fig. 1 function.Than Fig. 1, Fig. 4 structure only has 2 lead-in wires, is 2 end-apparatus spares, and is identical with general resistance.
Fig. 4 structure can further be simplified.By in gate oxide, introducing oxide layer fixed charge and oxide trapped charge, can omit grid layer 1, as shown in Figure 5.Induction forms strong inversion under the gate oxide as long as the quantity of electric charge in the gate oxide is enough to make, and structure shown in Figure 5 can realize mos capacitance substrate pressure drag function.Fixed charge in the gate oxide can be (Shi Min, semiconductor devices physics and technology, publishing house of University Of Suzhou, 2002 years) such as oxide trapped charge, oxide layer fixed charges.The method of introducing fixed charge has multiple, enumerates several method below but obviously is not limited only to following method.The first, can adopt the method for injection.By optionally electronics or ion injection, electric charge is injected in the oxide layer.Because oxide layer is an insulating material, electric charge promptly becomes fixed charge after injecting.The second, can utilize the characteristics of technology itself in oxide layer, to introduce fixed charge and trapped charge.X-ray irradiation and high energy electron bombardment also can be introduced fixed charge and trapped charge (Shi Min, semiconductor devices physics and technology, publishing house of University Of Suzhou, 2002) in oxide layer.
Can on gate oxide, make the thin insulation course 15 of one deck again, as shown in Figure 6.There is interfacial charge in the interface 16 that insulation course 15 and gate oxide are 4.Make the interfacial charge amount be enough under oxide layer, induce the strong inversion layer by process optimization and can realize mos capacitance substrate pressure drag function.Insulation course 15 is the insulating material different with gate oxide, can be silicon nitride but is not limited only to silicon nitride.
Gate oxide among Fig. 1,3,4,5,6, grid are identical with the width of nano beam, and this not necessarily.The width of gate oxide and grid only need get final product greater than the width of light doping section width under the gate oxide less than nano beam.The another kind design that is device shown in Figure 3 shown in Figure 7.The light doping section width is less than beam width among the figure, gate oxide and grid width are greater than the light doping section width but less than beam width, zone beyond the doped region can be with the heterogeneous doping of doped region also can be that homogeneity is mixed, but must guarantee parasitic parallel resistance pressure drag resistance under the mos capacitance.Obviously the device among Fig. 4,5,6 also can adopt the same or analogous nano beam doping of Fig. 7 design.Obviously the width of heavily doped region also can be not equal to the width of nano beam.
Nano beam is two-end fixed beam among Fig. 1-7, and this not necessarily.Mos capacitance substrate pressure drag structure also can be produced on other the nano thickness beam, for example semi-girder, V-type beam or the like.Figure 8 shows that mos capacitance substrate pressure drag structure Design example on the semi-girder.
Claims (12)
1, the pressure drag structure of the mos capacitance substrate on the nano beam is characterized in that the nano beam two ends are connected with anchor point respectively, and in y direction or the free vibration of z direction; Be manufactured with doped region under nano beam and press welding block, doped region is P type or N type; Doped region under grid, gate oxide and the gate oxide forms mos capacitance, and grid is drawn by metal lead wire realization electricity; Nano beam two ends doped region is made the electricity of electrode realization nano beam respectively and is drawn.
2, by the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 1, it is characterized in that described grid adopts floating gate structure, the grid of mos capacitance not lead-in wire is connected with extraneous, and described pressure drag structure only has 2 lead-in wires, is 2 end-apparatus spares.
3, press the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 1, it is characterized in that in grid oxygen layer, introducing oxide layer fixed charge and oxide trapped charge, omit grid, enough quantities of electric charge are responded to formation strong inversion layer under grid oxic horizon.
4, by the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 1, it is characterized in that on gate oxide, making a thin insulation course, the interfacial charge between insulation course and gate oxide is enough to induce the strong inversion layer under oxide layer.
5, to go the pressure drag structure of the mos capacitance substrate on the 1 described nano beam by right, it is characterized in that described nano beam is two-end fixed beam, semi-girder or V-type beam.
6, by the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 1, the width that it is characterized in that described nano beam is greater than thickness, and the fundamental vibration direction of nano beam is along the z direction; The material of described nano beam is silicon or the germanium with pressure drag characteristic.
7, press the pressure drag structure of the mos capacitance substrate on claim 1, the 3 or 4 described nano beam, it is characterized in that gate oxide, grid are identical with the width of nano beam, or the width of gate oxide and grid is greater than the width of the doped region under the gate oxide, less than the width of beam.
8, use as the pressure drag structure of the mos capacitance substrate on each the described nano beam among the claim 1-4 detection method the nano beam bending, it is characterized in that on mos capacitance, applying voltage, make and form strong inversion layer and space charge region under the mos capacitance in the nano beam, utilize the space charge region under the mos capacitance gate oxide to change the symmetry of title end resistance with respect to neutral surface, resistance is realized nanometer deflection of beam mensuration as force sensing resistance at the bottom of utilizing the title under the space charge region.
9, press the detection method of the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 8, it is characterized in that described mos capacitance claims the resistance of end force sensing resistance to be:
ρ is the resistivity of doped region in the formula, and L and W are the length and the width of space charge region, and h is the thickness of nano beam, h
CBe strong inversion layer thickness, h
DThickness for the space charge region.
10, press the detection method of the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 8, it is characterized in that of the doping content decision of the maximum charge of described space charge region by nano beam.
11, press the detection method of the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 10, it is characterized in that the doping type on the nano beam is identical.
12, press the detection method of the pressure drag structure of the mos capacitance substrate on the described nano beam of claim 8, it is characterized in that the nano beam strong inversion layer that the P type is mixed is the N type; The nano beam strong inversion layer that the N type is mixed is the P type.
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Family Cites Families (5)
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| JPH05196458A (en) * | 1991-01-04 | 1993-08-06 | Univ Leland Stanford Jr | Piezoresistance cantilever structure for atomic power microscope |
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| CN100498235C (en) * | 2006-11-03 | 2009-06-10 | 北京航空航天大学 | Electromagnet-piezo-resistance type micro mechanical resonant beam structure |
| CN100506686C (en) * | 2006-12-13 | 2009-07-01 | 清华大学 | Method for manufacturing piezoresistance type micro-cantilever beam sensor on SOI silicon sheet |
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