CN102253285A - Technology for detecting graphene piezoresistance factor by adopting iso-stress beam method - Google Patents
Technology for detecting graphene piezoresistance factor by adopting iso-stress beam method Download PDFInfo
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- CN102253285A CN102253285A CN201110115687XA CN201110115687A CN102253285A CN 102253285 A CN102253285 A CN 102253285A CN 201110115687X A CN201110115687X A CN 201110115687XA CN 201110115687 A CN201110115687 A CN 201110115687A CN 102253285 A CN102253285 A CN 102253285A
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Abstract
The invention relates to a technology for detecting the graphene piezoresistance factor, belonging to the technical field of nano material detection. The technology comprises the following implementation steps: 1. firstly manufacturing detection electrodes on a graphene sample and respectively leading wires at the end parts of the electrodes by adopting a bonding technology for detecting resistance variations, wherein the dimensions of the electrodes and the space between the electrodes can be adjusted according to the dimension of the graphene sample; 2. adopting an iso-stress cantilever beam 4 as a strain applying medium, applying concentrated forces to the end parts of the iso-stress beam to bend the beam and measuring the resistance variations of graphene 2 and a strain foil 3 which are stuck to the iso-stress beam; and 3. bringing relevant data into the formula for piezoresistance factor definition to compute the graphene piezoresistance factor.
Description
Technical field
The detection method of the Graphene pressure drag factor that the present invention relates to belongs to the detection technique field.
Background technology
Graphene (Graphene) is to be a kind of two-dimentional carbonaceous new material with cellular crystalline network that carbon atom that regular hexagon distributes constitutes by individual layer, this structure planar infinitely repeats, period profile, but only has nanoscale on perpendicular to the thickness direction on distribution plane.The carbon film structure of this monatomic thickness is tight unusually, in neat formation, and almost without any defective, the energy stable existence also shows many surprising physics, chemical characteristic characteristics, has important use to be worth in fields such as new forms of energy, detection, microsensors.Detecting Graphene pressure drag performance is the basis of resistance pressure type Graphene micro-nano sensor design.
The detection of the pressure drag factor of conventional material as stretching, compression method, is determined its pressure drag factor by the resistance change rate that detects target material generally to adopting institute's test material directly to apply strain.As the two-dimensional nano material, Graphene thickness of sample 0.34 nanometer of only having an appointment, half is no more than 10 microns length and width, while Graphene highly transparent, have transmittance, under normal condition, be difficult to accurately locate, more be difficult to directly apply strain and carry out resistance detection up to 97%.
In order to overcome above problem, be necessary to propose brand-new grapheme material pressure drag factor detection scheme, for the exploitation of resistance pressure type Graphene micro-nano sensor lays the foundation.
Summary of the invention
The present invention is directed to the grapheme material highly transparent, the detection difficult point that size is small, be difficult to locate and directly apply strain proposes to adopt equal stress beam method to realize the detection of the grapheme material pressure drag factor.For realizing the accurate location of Graphene sample, adopting surface silica dioxide thickness is the bearing basement of the silicon chip of 300 nanometers as Graphene, adopt photoetching and the little manufacturing process of Lift-off at Graphene surface deposition Ti/Au metal electrode, electrode separation can be determined according to the Graphene size, be used for the Graphene resistance detection.Silicon chip is pasted equal stress semi-girder surface, the semi-girder material can adopt metals such as aluminium, copper again.Paste the high precision foil gauge on equal stress beam surface in addition.Its feature comprises:
(1), adopt the Lift-off technology to make the micro-meter scale metal electrode on the Graphene surface;
(2), adopt the equal stress semi-girder to apply carrier as strain.
(3), the Graphene silicon chip and the high precision foil gauge that will have a detecting electrode pastes equal stress semi-girder surface.
From Ti/Au electrode and foil gauge two ends lead-in wire, be used for detecting Graphene resistance variations and deflection of beam strain respectively.
Description of drawings
Fig. 1 adopts equal stress beam method to detect the synoptic diagram of the Graphene pressure drag factor.
Fig. 2 is a Graphene of making the metal detection electrode.
Label title: 1, hyperchannel multimeter, 2, have a silicon chip of Graphene and electrode, 3, foil gauge, 4, the equal stress beam, 5, digital source table 6, Ti/Au metal electrode, 7, the Graphene sample, 8, at the bottom of the silicon wafer-based
Embodiment
As Fig. 1, foil gauge, the silicon chip that has Graphene and a detecting electrode are affixed to equal stress semi-girder surface, apply concentrated force in the equal stress beam end and make beam produce flexural deformation.The resistance variations of Graphene and foil gauge can measure, because the suffered stress of stress and strain sheet of Graphene is equal, therefore according to the definition of the pressure drag factor, can obtain the numerical value of the Graphene pressure drag factor.
Concrete implementation step of the present invention is:
1. with reference to figure 2, at first on the Graphene sample, produce detecting electrode, adopt bonding techniques to go between at electrode tip respectively, be used to detect resistance variations.Electrode size, spacing can be regulated according to the Graphene sample size.
2. apply concentrated force in the equal stress beam end and make beam produce flexural deformation, measure the resistance variations of Graphene and foil gauge.
3. related data is brought into and calculate the Graphene pressure drag factor.
Claims (1)
1. one kind is used for the method that the Graphene pressure drag factor detects, and its feature comprises:
(1), adopt the Lift-off technology to make the micro-meter scale metal electrode on the Graphene surface;
(2), adopt the equal stress semi-girder to apply carrier as strain.
(3), the Graphene silicon chip and the high precision foil gauge that will have a detecting electrode pastes equal stress semi-girder surface.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110115687XA CN102253285A (en) | 2011-05-06 | 2011-05-06 | Technology for detecting graphene piezoresistance factor by adopting iso-stress beam method |
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| CN201110115687XA CN102253285A (en) | 2011-05-06 | 2011-05-06 | Technology for detecting graphene piezoresistance factor by adopting iso-stress beam method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106441376A (en) * | 2016-11-01 | 2017-02-22 | 重庆科技学院 | Graphite grid flexible resistance strain gauge and manufacturing method thereof |
| WO2017080340A1 (en) * | 2015-11-09 | 2017-05-18 | 南京信息工程大学 | Nanowire giant piezo-resistive property measurement device and manufacturing method therefor |
| CN112816780A (en) * | 2021-01-29 | 2021-05-18 | 淮阴工学院 | Graphene piezoresistive factor detection method |
| CN117606656A (en) * | 2024-01-17 | 2024-02-27 | 成都飞机工业（集团）有限责任公司 | Workpiece stress detection method, device, equipment and medium |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017080340A1 (en) * | 2015-11-09 | 2017-05-18 | 南京信息工程大学 | Nanowire giant piezo-resistive property measurement device and manufacturing method therefor |
| CN106441376A (en) * | 2016-11-01 | 2017-02-22 | 重庆科技学院 | Graphite grid flexible resistance strain gauge and manufacturing method thereof |
| CN112816780A (en) * | 2021-01-29 | 2021-05-18 | 淮阴工学院 | Graphene piezoresistive factor detection method |
| CN117606656A (en) * | 2024-01-17 | 2024-02-27 | 成都飞机工业（集团）有限责任公司 | Workpiece stress detection method, device, equipment and medium |
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Application publication date: 20111123 |