CN104967430B - Gallium nitride base low-leakage current clamped beam switchs the rest-set flip-flop of nor gate - Google Patents
Gallium nitride base low-leakage current clamped beam switchs the rest-set flip-flop of nor gate Download PDFInfo
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Abstract
The rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates is by the first clamped beam grid NMOS tube (1), second clamped beam grid NMOS tube (2), 3rd clamped beam grid NMOS tube (3), first nor gate (G1) of the 4th clamped beam grid NMOS tube (4) composition, second nor gate (G2), each clamped beam grid NMOS tube is respectively by grid (8), source electrode and drain electrode are constituted, when the voltage being carried between clamped beam switch and pull-down electrode is more than the threshold voltage of MESFET, clamped beam switch is drop-down to be close to grid, the depletion region thickness of N-type MESFET reduces and turns on, the NOR-logic to input signal is realized on this basis；When institute's making alive is less than the threshold voltage of MESFET between clamped beam switch and pull-down electrode, clamped beam switch cannot be drop-down, does not just exist voltage on its grid, so N-type MESFET cannot be turned on, so grid leakage current would not be present, this reduces the power consumption of rest-set flip-flop.
Description
Technical field
The present invention proposes gallium nitride base low-leakage current clamped beam switch MESFET (metals-semiconductor field effect transistor
Pipe) nor gate rest-set flip-flop, belong to the technical field of microelectromechanical systems.
Background technology
The appearance of the development of wireless communication technology, especially smart mobile phone nearly ten years, the whole world mobile terminal that attacked sets
The standby quick tide for updating, at the same time as the indispensable important component of this kind equipment, the core of RF IC
Piece is also developed rapidly, and collection constantly expands on a large scale, and working frequency is improved constantly, and traditional silica-base material can not meet will
Ask.MESFET based on gallium nitride substrate is exactly to be suggested application under this background, due to the good characteristic of gallium nitride material
So that there is electron mobility very high, very strong capability of resistance to radiation, larger operating temperature range by the transistor that it is manufactured.
Because the quantity of transistor in chip is more and more, the thing followed is exactly the power problemses of integrated circuit, and too high power consumption
Can cause chip overheating, the working characteristics of transistor can be affected by temperature and change, so the chip temperature of overheat
Chip service life reduction can not only be made, and the stability of chip can be influenceed.
Rest-set flip-flop circuit as digital circuit important component, it be it is various with sophisticated functions triggers electricity
The basic composition part on road, it is basic due to rest-set flip-flop circuit, have huge in the digital circuits such as central processing unit
Using, so the control to the power consumption and temperature of rest-set flip-flop circuit just seems particularly significant, the RS being made up of conventional MESFET
Trigger, with the lifting of integrated level, power consumption becomes increasingly severe, and the excessive chip overheating problem brought of power consumption can serious shadow
Ring integrated circuit performance, MEMS technology development cause manufacture with movable clamped beam construction of switch MESFET turn into can
Can, the MESFET with movable clamped beam construction of switch can effectively reduce grid leakage current, and then reduce rest-set flip-flop circuit
Power consumption.
The content of the invention
Technical problem:It is an object of the invention to provide a kind of gallium nitride base low-leakage current clamped beam switch MESFET nor gates
Rest-set flip-flop, two OR-NOT circuits being made up of traditional MESFET that will be used in rest-set flip-flop be changed to two it is clamped by having
The OR-NOT circuit of the MESFET compositions of beam construction of switch, when the rest-set flip-flop is in running order, can effectively reduce
The grid leakage current of transistor, so as to reduce the power consumption of rest-set flip-flop.
Technical scheme：A kind of rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch nor gate of the invention is by first
What clamped beam grid NMOS tube, the second clamped beam grid NMOS tube, the 3rd clamped beam grid NMOS tube, the 4th clamped beam grid NMOS tube were constituted
First nor gate, the second nor gate, each clamped beam grid NMOS tube are made up of grid, source electrode and drain electrode respectively, wherein source electrode
Formed Ohmic contact and constituted by metal and heavy doping N areas with drain electrode, grid forms Schottky contacts and constitutes by metal and channel region,
Four clamped beam grid NMOS tubes of the rest-set flip-flop are produced on gallium nitride substrate, and clamped beam switch is left floating above grid,
The two ends of clamped beam switch are separately fixed in Liang Gemao areas, and the data signal of input is carried on clamped beam switch, and this is clamped
Beam switch is made up of titanium/gold/titanium, there is pull-down electrode between clamped beam switch and substrate, and pull-down electrode is by silicon nitride material
Covering；Wherein the output end of the first nor gate is connected by wire with an input of the second nor gate, and same second or non-
The output end of door is connected also by wire with an input of the first nor gate, forms full symmetric structure；The RS is touched
It is respectively SD and RD that hair device has two inputs, and two output end Q and Q', SD and RD are not had in two nor gates
That input being connected with output end, Q and Q' is still then to be directly constituted by the output end of two nor gates.
The source electrode for constituting two clamped beam grid NMOS tubes of each nor gate in the rest-set flip-flop links together altogether
With ground connection, the clamped beam switch 7 of two clamped beam grid NMOS tubes is all the input of data signal, two clamped beam grid NMOS tubes
Drain electrode link together and connected with supply voltage by same resistance, data signal is clamped two clamped beam grid NMOS tubes
It is input on beam switch, is exported between two drain electrodes of MESFET load resistance 5 together.
The resistance of described resistance is set to：When wherein any one clamped beam grid NMOS tube is turned on, compared to conducting
Clamped beam grid NMOS tube, sufficiently large may be such that of the resistance of the resistance be output as low level, when two clamped beam grid NMOS tubes all
When can not turn on, compared to the clamped beam grid NMOS tube of cut-off, sufficiently small may be such that of the resistance of the resistance is output as high level.
Described clamped beam switch is suspended on its grid, and Schottky contacts are formd between grid and substrate,
Depletion layer is formed in square substrate under the gate, the threshold with clamped beam grid NMOS tube of the actuation voltage design of clamped beam switch
Threshold voltage is equal, when threshold voltage of the voltage more than clamped beam grid NMOS tube being carried between clamped beam switch and pull-down electrode
When, clamped beam switch is drop-down to be close to grid, and the depletion region thickness of clamped beam grid NMOS tube reduces and turns on；When clamped beam switch
When institute's making alive is less than the threshold voltage of clamped beam grid NMOS tube between pull-down electrode, clamped beam switch cannot be drop-down, its
Just do not exist voltage on grid, so the clamped beam grid NMOS tube cannot be turned on, grid leakage current would not be present, thus
Reduce the power consumption of rest-set flip-flop.
Beneficial effect：In the rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates of the invention
The clamped beam switch of clamped beam switch MESFET is drop-down just to be had voltage and exists when being in contact with N-type MESFET grids on grid,
When clamped beam switch is in suspended state, can not effectively turn on, therefore clamped beam switch MESFET can effectively reduce grid
Pole leakage current, reduces the power consumption of circuit；And the MESFET of gallium nitride base has high electron mobility, disclosure satisfy that high-frequency digital
Under signal the need for circuit normal work.
Brief description of the drawings
Fig. 1 is the top view of the rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates.
Fig. 2 is the A-A' of the rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates to profile.
Fig. 3 be gallium nitride base low-leakage current clamped beam switch MESFET nor gates rest-set flip-flop B-B' to section
Figure.
Fig. 4 is the schematic diagram of the rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates.
Figure includes：First clamped beam grid NMOS tube 1, the second clamped beam grid NMOS tube 2, the 3rd clamped beam grid NMOS tube 3,
4th clamped beam grid NMOS tube 4, resistance 5, lead 6, clamped beam switch 7, grid 8, anchor area 9, N traps 10, N-type active area 11, under
Pulling electrode 12, gallium nitride substrate 13, the first nor gate G1, the second nor gate G2.
Specific embodiment
The rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates of the invention is by two by clamped
Beam switchs the first nor gate G1, the second nor gate G2 (i.e. first clamped beam grid of N-type MESFET (clamped beam grid NMOS tube) composition
NMOS tube 1, the second clamped beam grid NMOS tube 2, the 3rd clamped beam grid NMOS tube 3, the 4th clamped beam grid NMOS tube 4), MESFET by
Grid 8, source electrode and drain electrode constitute, wherein source electrode and drain electrode formed Ohmic contact and constituted by metal and heavy doping N areas, grid 8 by
Metal and channel region form Schottky contacts and constitute, and four N-type MESFET of the trigger are produced on gallium nitride substrate 13,
The top of grid 8 of MESFET left floating clamped beam switch 7, and the data signal of input is carried on clamped beam switch 7, the clamped beam
Switch 7 is made up of titanium/gold/titanium, there is pull-down electrode 12 between clamped beam switch 7 and substrate 13, and pull-down electrode 12 is by nitrogenizing
Silicon materials are covered.
The source electrode for constituting two MESFET of the nor gate of the rest-set flip-flop links together common ground, two MESFET
Clamped beam switch 7 be all data signal inputs, the drain electrode of two MESFET link together then with the phase of same resistance 5
Connect, the resistance of resistance 5 is set to when wherein any one MESFET is turned on, compared to the MESFET of conducting, the resistance of the resistance 5
Sufficiently large may be such that of value is output as low level, when two MESFET can not be turned on, compared to the MESFET of cut-off, the resistance
Sufficiently small may be such that of 5 resistance is output as high level.Resistance 5 connects with supply voltage, and data signal is consolidated two MESFET's
It is input on strutbeam switch 7, is exported between two drain electrodes of MESFET load resistance 5 together.
The rest-set flip-flop is made up of two identical nor gates, wherein the output end of the first nor gate G1 is by leading
Line connects with an input of the second nor gate G2, and the output end of same second nor gate G2 is also by wire and first or non-
One input of door G1 is connected, and forms full symmetric structure.It is respectively SD and RD that rest-set flip-flop has two inputs, with
And two output end Q and Q', SD and RD are respectively the respective inputs that two nor gates are not connected with output end, Q and
Q' is directly formed by the output end of two nor gates.
When the rest-set flip-flop is in operating conditions, Q=1 is defined, Q'=0 is 1 state of trigger, defines Q=0, Q'=1
It is 0 state of trigger, SD is referred to as set end, and RD is referred to as reset terminal.As SD=1, RD=0, Q=1, Q'=0, in SD=1
After blackout, another input of G2 is taken back due to the high level for there are Q ends, thus 1 state of circuit is maintained；
As SD=0, RD=1, Q=0, Q'=1, after RD=1 blackouts, 0 state of circuit keeps constant；Work as SD=RD=
When 0, the state that circuit remains original is constant；As SD=RD=1, Q=Q'=0, this neither definition 1 state, nor
0 state of definition, and still cannot judge which state trigger will be returned to after SD and RD returns to 0 simultaneously, therefore,
Input signal should observe the constraints of SDRD=0 during normal work, then the signal of SD=RD=1 would not allow for input.And
And the clamped beam switch N-type MESFET in the rest-set flip-flop is as the change of input signal its state is also between conducting and shut-off
Change, when clamped beam switch MESFET is off state, its clamped beam switch is at suspended state, and this means that this moment
Do not exist grid leakage current on MESFET in the rest-set flip-flop, this reduces the quiescent dissipation of rest-set flip-flop.Because RS is touched
Send out not only relevant with input state and original with the rest-set flip-flop state Q of new state Q* (also referred to as next state) of device (also referred to as
It is initial state) it is relevant, it is possible to list truth table in using Q as a variable, then the truth table of the rest-set flip-flop for obtaining is as follows：
| SD | RD | Q | Q* |
| 0 | 0 | 0 | 0 |
| 0 | 0 | 1 | 1 |
| 1 | 0 | 0 | 1 |
| 1 | 0 | 1 | 1 |
| 0 | 1 | 0 | 0 |
| 0 | 1 | 1 | 0 |
The preparation method of the rest-set flip-flop of gallium nitride base low-leakage current clamped beam switch MESFET nor gates includes following several
Individual step：
1) semi-insulating type gallium nitride substrate 13 is prepared；
2) one layer of silicon nitride, photoetching and etch silicon nitride are deposited, the silicon nitride of N-type MESFET channel regions is removed；
3) N-type MESFET Channeling implantations, inject phosphorus, anneal in a nitrogen environment；After the completion of annealing, carry out at high temperature miscellaneous
Matter is redistributed, and forms the channel region of N-type MESFET；
4) silicon nitride layer is removed：Silicon nitride is all removed using dry etching technology；
5) photoetched grid 8, remove the photoresist in grid region；
6) electron beam evaporation titanium/platinum/gold；
7) titanium/platinum/gold on remaining photoresist and photoresist is removed；
8) heat, titanium/platinum/billon is formed Schottky contacts with N-type MESFET raceway grooves；
9) photoresist is coated, photoetching simultaneously etches the photoresist of N-type MESFET source electrodes and drain region；
10) carry out N-type to the region to be lightly doped, the N-type formed in N-type MESFET source electrodes and drain region is lightly doped active
Area 11, carries out short annealing treatment；
11) photoresist of photoetching source electrode and drain electrode, removal source electrode and drain electrode；
12) it is evaporated in vacuo gold germanium ni au；
13) the gold germanium ni au on photoresist and photoresist is removed；
14) alloying forms Ohmic contact, forms source electrode and drain electrode；
15) photoresist, the position of anchor area 9 of removal power line, ground wire, lead 6, pull-down electrode 12 and clamped beam switch are coated
Photoresist；
16) evaporation ground floor gold, its thickness is about 0.3 μm；
17) gold on removal photoresist and photoresist, forms power line, ground wire, lead 6, pull-down electrode 12 and clamped
The anchor area 9 of beam switch；
18) one layer is depositedThick silicon nitride；
19) photoetching and etch nitride silicon dielectric layer, are retained in the silicon nitride in pull-down electrode 12；
20) deposit and photoetching polyimide sacrificial layer：The polyimides sacrifice of 1.6 μ m-thicks is coated on gallium nitride substrate 13
Layer, it is desirable to fill up pit；Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam switch；
21) titanium/gold/titanium is evaporated, its thickness is 500/1500/
22) photoetching：Removal will electroplate the photoresist in place；
23) gold is electroplated, its thickness is 2 μm；
24) photoresist is removed：Removal need not electroplate the photoresist in place；
25) titanium/gold/titanium is anti-carved, corrodes down payment, form clamped beam switch 7；
26) polyimide sacrificial layer is discharged：Developer solution soaks, the polyimide sacrificial layer under removal clamped beam switch 7, goes
Ionized water soaks slightly, absolute ethyl alcohol dehydration, is volatilized under normal temperature, dries.
Difference with the prior art of the present invention is
The clamped beam switch of the N-type clamped beam switch MESFET that the rest-set flip-flop in the present invention is used is suspended in its grid
On pole, Schottky contacts are formd between the grid and substrate of N-type MESFET, formed in square substrate exhaust under the gate
Layer, N-type MESFET clamped beam switch actuation voltage be designed to it is equal with the threshold voltage of MESFET, it is clamped when being carried in
When beam is switched and the voltage between pull-down electrode is more than the threshold voltage of MESFET, clamped beam switch is drop-down to be close to grid, N-type
The depletion region thickness of MESFET reduces and turns on, and the NOR-logic to input signal is realized on this basis；When clamped beam switch
When institute's making alive is less than the threshold voltage of MESFET between pull-down electrode, clamped beam switch cannot be drop-down, on its grid just
In the absence of voltage, so N-type MESFET cannot be turned on, then grid leakage current would not be present, this reduces RS
The power consumption of trigger.
Meet the gallium nitride base low-leakage current clamped beam switch that the structure of conditions above can be considered as in the present invention
The rest-set flip-flop of MESFET nor gates.
Claims (4)
1. a kind of gallium nitride base low-leakage current clamped beam switchs the rest-set flip-flop of nor gate, it is characterised in that the rest-set flip-flop is by the
Second nor gate (G2) of one clamped beam grid NMOS tube (1), the second clamped beam grid NMOS tube (2) composition, the 3rd clamped beam grid
NMOS tube (3), first nor gate (G1) of the 4th clamped beam grid NMOS tube (4) composition, each clamped beam grid NMOS tube difference
It is made up of grid (8), source electrode and drain electrode, wherein source electrode and drain electrode is formed Ohmic contact and constituted by metal and heavy doping N areas, grid
Schottky contacts are formed by metal and channel region to constitute, four clamped beam grid NMOS tubes of the rest-set flip-flop are produced on gallium nitride lining
On bottom (13), clamped beam switch (7) is left floating in grid (8) top, the two ends of clamped beam switch (7) are separately fixed at two anchors
In area (9), the data signal of input is carried on clamped beam switch (7), and clamped beam switch (7) is made up of titanium/gold/titanium,
Clamped beam is switched has pull-down electrode (12) between (7) and substrate (13), pull-down electrode (12) is covered by silicon nitride material；Wherein
The output end of the first nor gate (G1) is connected by wire with an input of the second nor gate (G2), same second nor gate
(G2) output end is connected also by wire with an input of the first nor gate (G1), forms full symmetric structure；
It is respectively S that the rest-set flip-flop has two inputsDAnd RD, and two output end Q and Q', SDAnd RDIt is respectively two nor gates
In that input for not being connected with output end, Q and Q' is still then to be directly constituted by the output end of two nor gates.
2. gallium nitride base low-leakage current clamped beam according to claim 1 switchs the rest-set flip-flop of nor gate, and its feature exists
The source electrode of two clamped beam grid NMOS tubes of each nor gate in the rest-set flip-flop is constituted links together common ground,
Clamped beam switch (7) of two clamped beam grid NMOS tubes is all the input of data signal, two leakages of clamped beam grid NMOS tube
Pole is linked together and is connected with supply voltage by load resistance (5), and data signal is clamped two clamped beam grid NMOS tubes
It is input on beam switch (7), is exported between two drain electrodes of MESFET load resistance (5) together.
3. gallium nitride base low-leakage current clamped beam according to claim 2 switchs the rest-set flip-flop of nor gate, and its feature exists
It is set in the resistance of described load resistance (5)：When wherein any one clamped beam grid NMOS tube is turned on, compared to conducting
Clamped beam grid NMOS tube, sufficiently large may be such that of resistance of the load resistance (5) is output as low level, when two clamped beam grid
When NMOS tube can not all be turned on, compared to the clamped beam grid NMOS tube of cut-off, the resistance of the load resistance (5) is sufficiently small to be may be such that
It is output as high level.
4. gallium nitride base low-leakage current clamped beam according to claim 1 switchs the rest-set flip-flop of nor gate, and its feature exists
It is suspended on its grid (8) in described clamped beam switch (7), Xiao Te is formd between grid (8) and substrate (13)
Base is contacted, and forms depletion layer in substrate (13) below grid (8), the actuation voltage design of clamped beam switch (7) with
The threshold voltage of clamped beam grid NMOS tube is equal, when the voltage being carried between clamped beam switch (7) and pull-down electrode (12) is big
When the threshold voltage of clamped beam grid NMOS tube, (7) are drop-down is close to grid (8) for clamped beam switch, clamped beam grid NMOS tube
Depletion region thickness reduces and turns on；When institute's making alive is less than clamped beam grid between clamped beam switch (7) and pull-down electrode (12)
During the threshold voltage of NMOS tube, clamped beam switch (7) cannot be drop-down, does not just exist voltage on its grid (8), so this is clamped
Beam grid NMOS tube cannot be turned on, and grid leakage current would not be present, this reduces the power consumption of rest-set flip-flop.
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| CN102074627A (en) * | 2009-11-19 | 2011-05-25 | 乐金显示有限公司 | Semiconductor light-emitting device and a method for manufacturing the same |
| CN102194830A (en) * | 2010-01-28 | 2011-09-21 | 英特赛尔美国股份有限公司 | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
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|---|---|---|---|---|
| CN102074627A (en) * | 2009-11-19 | 2011-05-25 | 乐金显示有限公司 | Semiconductor light-emitting device and a method for manufacturing the same |
| CN102194830A (en) * | 2010-01-28 | 2011-09-21 | 英特赛尔美国股份有限公司 | Monolithic integration of gallium nitride and silicon devices and circuits, structure and method |
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| Title |
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| 周桂林等.《增强型GaN MOSFET的制备及其绝缘删的电荷特性研究》.《中国科技论文》.2015,第10卷(第4期),第420-423页. * |
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