CN104935256B - The double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current - Google Patents
The double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current Download PDFInfo
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Abstract
The double clamped beam switch double grid HEMT frequency multipliers of GaAs bases low-leakage current of the present invention, by GaAs substrates, enhanced HEMT, external low pass filter, voltage controlled oscillator, divider, high frequency choke coil are formed.Two clamped beam switches are suspended on two grids, and as the input of reference signal and feedback signal, clamped beam switch actuation voltage is designed as HEMT threshold voltages, and HEMT conducting is controlled under direct current biasing.When two clamped beam switches disconnect, gate voltage 0, without raceway groove, HEMT cut-offs, be advantageous to reduce grid leakage current.When two clamped beam switches drop-down closure and gate contact, two-dimensional electron gas raceway groove is formed, and HEMT conductings, reference signal and feedback signal are amplified by HEMT, after drain electrode exports low-pass filtered device, voltage controlled oscillator and divider feedback cycle, frequency-doubled signal is obtained.Only during a clamped beam switch closure, the independent amplification to gating signal can be achieved, circuit has multi-functional.
Description
Technical field
The present invention proposes the double clamped beam switch double grid HEMT of GaAs (GaAs) bases low-leakage current, and (high electron mobility is brilliant
Body pipe) frequency multiplier, belong to the technical field of microelectromechanical systems.
Background technology
Frequency multiplier is one kind of frequency synthesizer, and it can pass through a reference signal effect of functional circuit, produce reference
The target frequency signal of signal frequency integral multiple.Frequency multiplier is may make up using phaselocked loop and divider.Frequency multiplier has become electricity
An important part in sub- technology, space technology and the communication technology.However, with traditional frequency multiplier circuit
MOSFET structure is compared, and high electron mobility transistor (HEMT) shows more advantages, such as higher electron mobility, speed
Degree is faster, more efficient, can also reduce power consumption etc..In addition, MEMS beam structure facilitate it is controllable, also promote circuit to structure letter
Single, the direction that volume diminishes is developed.
The present invention will formally combine HEMT-structure and MEMS technology, propose a kind of double clamped beam switches of GaAs bases low-leakage current
Double grid HEMT frequency multipliers.
The content of the invention
Technical problem:It is an object of the invention to provide a kind of double clamped beam switch double grid HEMT frequencys multiplication of GaAs bases low-leakage current
Device, immediately below two clamped beam switches, reference signal and reference signal are carried in two clamped beams and opened two grids respectively
Shut, clamped beam switch controls HEMT conducting in circuit, passes through the control switched to two clamped beams and external circuitses
Effect, realize the computing to reference signal frequency, obtain target frequency.
Technical scheme：The HEMT of the double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current of the present invention is to be grown in
Enhanced HEMT on GaAs substrates, including intrinsic GaAs layers, intrinsic AlGaAs layers, N+AlGaAs layers, source electrode, drain electrode, grid,
Anchor area, clamped beam switch, pulls down pole plate, insulating barrier, through hole, lead；There are intrinsic GaAs layers, intrinsic GaAs layers on gaas substrates
On have intrinsic AlGaAs layers, have N+AlGaAs layers on intrinsic AlGaAs layers, source electrode, drain electrode positioned at two clamped beams switches two
Side, source ground, two grids are set up in parallel, and are corresponded with two clamped beam switches, the both ends of clamped beam switch are fixed on
In anchor area, the middle part of clamped beam switch is suspended on grid, and drop-down pole plate is arranged between anchor area and grid, and drop-down pole plate connects
Ground, insulating barrier are covered on drop-down pole plate, and direct current biasing is acted on clamped beam switch by high frequency choke coil and anchor area, Gu
The actuation voltage of strutbeam switch is designed as HEMT threshold voltage；Lead connects intrinsic GaAs layers by through hole respectively；
HEMT drain electrodes output signal has two kinds of different working methods, and one kind is that selection first port is inputted to LPF
Device, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output access divider by the 3rd port, and divider is defeated
Go out signal to be loaded on a clamped beam switch by anchor area as feedback signal, form backfeed loop, reference signal passes through anchor
Area is loaded on another clamped beam switch, and another working method of HEMT drain electrode output signals is that selection second port is direct
Export amplified signal.
The closure of clamped beam switch is disconnected by direct current biasing control, when two clamped beams switches are reaching or surpassing
Drop-down is realized under the direct current biasing of actuation voltage, with gate contact, when switch closes, in the presence of gate voltage, forms two dimension
Electron gas channel, HEMT conductings, reference signal is realized with feedback signal by HEMT to be multiplied, and drain electrode output includes the phase of two signals
Potential difference information, first port input low pass filter is selected, filters out HFS, output includes the direct current of phase information
Pressure, DC voltage input voltage controlled oscillator as control voltage, and the output frequency of voltage controlled oscillator is conditioned, after regulating frequency
Signal is loaded on clamped beam switch through the 3rd port transmission to divider, divider output signal as feedback signal, loop
The result of circulation feedback is that feedback signal is equal with the frequency of reference signal, the port output frequency f of voltage controlled oscillator the 4thoFor ginseng
Examine signal frequency N times：N×fref, realize the frequency multiplication of reference signal；
When direct current biasing is less than actuation voltage, two clamped beams switches not with gate contact, when switching off, gate voltage
End for 0, HEMT, can effectively reduce grid leakage current, reduce power consumption；
When an only clamped beam switch closure, when another clamped beam switch is off, the clamped beam of closure
Two-dimensional electron gas channel formed below is switched, the clamped beam of disconnection switchs high resistance area formed below, and raceway groove is connected with high resistance area
Structure is advantageous to improve HEMT breakdown reverse voltage, and the gating signal on clamped beam switch only closed can pass through HEMT
Amplification, amplified signal export through second port, and when the clamped beam of only loading reference signal switchs closure, reference signal passes through
HEMT amplifies, second port output reference signal frequency frefAmplified signal, when only loading feedback signal clamped beam switch
During closure, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator output frequency foAfter divider divided by N
Result：fo/ N, second port output frequency are fo/ N amplified signal, the clamped beam switch of disconnection are also beneficial to reduce grid
Leakage current, reduce power consumption.
Beneficial effect：The double clamped beam switch double grid HEMT frequency multipliers of GaAs bases low-leakage current of the present invention have following notable
The advantages of：
1st, two clamped beam switches play a part of switch, the convenient conducting for controlling HEMT in circuit.
2nd, clamped beam construction of switch facilitates circuit controllable, by the control switched to single clamped beam, realizes to single
The processing of signal, make Multifunctional circuit, expanded application scope.
3rd, HEMT is combined with MEMS technology so that circuit efficiency is lifted, and lower power consumption, is simplified the structure, volume is small-sized
Change.
Brief description of the drawings
Fig. 1 is that the double clamped beams of GaAs bases low-leakage current of the present invention switch the top view of double grid HEMT frequency multipliers.
Fig. 2 is that the double clamped beams of Fig. 1 GaAs bases low-leakage currents switch the A-A ' of double grid HEMT frequency multipliers to profile.
Fig. 3 is that the double clamped beams of Fig. 1 GaAs bases low-leakage currents switch the B-B ' of double grid HEMT frequency multipliers to profile.
When Fig. 4 is that double two switches of clamped beams switch double grid HEMT frequency multipliers of Fig. 1 GaAs bases low-leakage current pull down closure
Raceway groove schematic diagram.
Fig. 5 is that the double clamped beams of Fig. 1 GaAs bases low-leakage current are switched when the drop-down of double grid HEMT frequency multipliers single switch closes
Raceway groove schematic diagram.
Embodiment
The double clamped beams switch double grid HEMT frequency multipliers of the GaAs bases low-leakage current of the present invention include GaAs substrates, enhanced
HEMT, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil；Wherein HEMT is grown in GaAs substrates
On, sequentially consist of intrinsic GaAs layers, intrinsic AlGaAs layers, N+AlGaAs layers, two grids arranged side by side are located at N+
On AlGaAs layers；Other source electrode and drain electrode are deep into intrinsic GaAs layers.Intrinsic GaAs layers form heterogeneous with intrinsic AlGaAs layers
Knot, grid form Schottky contacts with N+AlGAs.Two clamped beams switch by anchor area be suspended in respectively two grids just on
Side.Drop-down pole plate, drop-down pole plate ground connection are provided between grid and anchor area, insulating barrier is covered on drop-down pole plate.
Reference signal and feedback signal are loaded on two clamped beam switches by anchor area respectively.Direct current biasing passes through high frequency
Choke coil and anchor area are acted on clamped beam switch.High frequency choke coil ensures that direct current biasing and AC signal separate.
The actuation voltage of clamped beam switch is designed as HEMT threshold voltage.When direct current biasing is less than actuation voltage, two
Clamped beam switch is in suspend disconnect, not with gate contact when, grid voltage 0, for enhanced HEMT, Schottky barrier
Intrinsic GaAs layers are deep into, the two-dimensional electron gas of intrinsic GaAs layers and the intrinsic heterogeneous junction boundary of AlGaAs layers is depleted, so
HEMT can not be turned on.
When direct current biasing reaches or more than actuation voltage, two clamped beams switches are when drop-down closure is with gate contact,
Gate voltage is the size of direct current biasing, and now Schottky barrier narrows, two-dimensional electron gas increase, HEMT conductings, reference
Signal is multiplied with feedback signal by HEMT.Drain electrode output signal contains the phase difference letter between reference signal and feedback signal
Breath.Low pass filter filters out the high fdrequency component in this signal, and conveys a DC voltage to voltage controlled oscillator, and regulation is voltage-controlled
The frequency of the output signal of oscillator.Voltage controlled oscillator output signal passes through after divider, corresponding in frequency to occur 1/N's
Change, and be used as feedback signal, re-enter HEMT, by the effect of loop, feedback signal and reference signal reach locking, i.e.,
Frequency and reference signal frequency after voltage controlled oscillator output frequency divided by N is equal.So letter of final voltage controlled oscillator output
Number frequency is N times of reference signal frequency, realizes frequency multiplication.
When only a clamped beam switch closure is with corresponding gate contact, the clamped beam switch formed below two of closure
Dimensional electron gas raceway groove, another clamped beam disconnected lower section is high resistance area, and the structure that raceway groove is connected with high resistance area can be effective
Improve the breakdown reverse voltage of device.Output can be amplified by HEMT by only corresponding to the gating signal on clamped beam switch.From
And the independent control by being switched to a clamped beam, the amplification to individual signals is realized, expands the application of circuit.
The double clamped beam switch double grid HEMT frequency multipliers of GaAs bases low-leakage current of the present invention are done into one below in conjunction with the accompanying drawings
Step is explained.
As shown in figure 1, the double clamped beam switch double grid HEMT frequency multipliers of the GaAs bases low-leakage current of the present invention serve as a contrast including GaAs
Bottom 1, enhanced HEMT on gaas substrates, external low pass filter, voltage controlled oscillator, divider, high frequency choke are set
Circle.
HEMT includes intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, source electrode 5, drain electrode 6, two grids 7,
Anchor area 8, two clamped beam switches 9, pulls down pole plate 10, insulating barrier 11, through hole 12, lead 13.Wherein, source electrode 5 is grounded, clamped beam
Switch 9 is suspended in the top of grid 7 by anchor area 8, and two grids 7 and two clamped beam switches 9 are corresponded, and drop-down pole plate 10 is set
Put below clamped beam switch 9, lower rubbish pole plate 10 is grounded.Inside HEMT-structure, grid 7 forms Xiao Te with N+AlGaAs layers 4
Base contacts, and intrinsic AlGaAs layers 3 form hetero-junctions with intrinsic GaAs layers 2.For enhanced HEMT, when gate voltage is 0, hetero-junctions
The Two-dimensional electron gas channel at interface is exhausted by Schottky contacts.
6 output signals of HEMT drain electrodes can select two kinds of working methods, and one kind is that selection first port 14 accesses low pass filtered
Ripple device, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output access divider, division by the 3rd port 16
The output signal of device accesses a clamped beam switch 9 as feedback signal by anchor area 8, and reference signal is accessed separately by anchor area 8
One clamped beam switch.Another working method of HEMT 6 output signals of drain electrode is the directly output amplification of selection second port 15
Signal.
Direct current biasing is acted on clamped beam switch by high frequency choke coil and anchor area 8.High frequency choke coil ensures that direct current is inclined
Put and separated with AC signal.The actuation voltage of clamped beam switch 9 is designed as HEMT threshold voltage, when direct current biasing is less than drop-down
Voltage, clamped beam switch do not contact with grid 7, and when switching off, gate voltage 0, heterojunction boundary does not have Two-dimensional electron channeling
Road, HEMT cut-offs, can effectively reduce grid leakage current, reduce power consumption.
When direct current biasing reaches or surpasses actuation voltage, two drop-downs of clamped beam switch 9 contact with grid 7, and switch closes
During conjunction, in the presence of gate voltage, two-dimensional electron gas is assembled in heterojunction boundary, forms raceway groove, as shown in figure 4, HEMT is turned on.
Reference signal is multiplied with feedback signal by HEMT.6 output signals that drain contain the phase information between two signals, selection
First port 14 input low pass filter, low pass filter will drain output in high fdrequency component filter out, it is defeated to voltage controlled oscillator
A DC voltage is sent, DC voltage can be expressed as：
Wherein K is HEMT gain coefficients, frefFor reference signal frequency, fbackFor feedback frequency signal, φ is proper phase
Difference.Voltage controlled oscillator adjusts the size of output signal frequency under the control of DC voltage.Voltage controlled oscillator output frequency can be with
Expressed by following differential representation formula：
Wherein, foFor voltage controlled oscillator output frequency, KvFor voltage controlled oscillator sensitivity.After divider, frequency is changed into
1/N originally, and feedback signal is used as, re-enter HEMT.Namely：
Acted on by feedback cycle, the frequency of feedback signal is final consistent with reference signal.I.e.：
So the signal frequency of the final port 17 of voltage controlled oscillator the 3rd output is N times of reference signal frequency, ginseng is realized
Examine the frequency multiplication of signal.
Only a clamped beam switch 9 is pulled down closure, when another clamped beam switch 9 is in suspension off-state, closes
The clamped beam of conjunction switchs 9 Two-dimensional electron gas channels formed below, and the lower section of clamped beam switch 9 of disconnection is high resistance area, such as Fig. 5 institutes
Show, raceway groove is connected with high resistance area, is advantageous to improve breakdown reverse voltage.Now, the gating on clamped beam switch 9 only closed
Signal can be amplified by HEMT, and amplified signal is exported by second port 15.When the clamped beam of only loading reference signal is opened
When closing 9 closure, reference signal is amplified by HEMT, and the output frequency of second port 15 is frefAmplified signal.It is anti-when only loading
During clamped beam 9 closure of switch of feedback signal, feedback frequency signal is result of the pressuring controlling oscillator frequency after divider, i.e.,
fo/ N, so, the output frequency of second port 15 is fo/ N amplified signal.So as to pass through the independent control to a clamped beam switch 9
System, realizes the amplification to individual signals, expands the application of circuit.In addition, 9 are switched for the clamped beam of disconnection, can
Reduce grid leakage current, reduce power consumption.
The preparation method of the double clamped beam switch double grid HEMT frequency multipliers of GaAs bases low-leakage current of the present invention is as follows：
1) in semi-insulating p-type GaAs substrates；
2) the intrinsic GaAs layers about 500nm of epitaxial growth；
3) the intrinsic AlGaAs separation layers about 50nm of epitaxial growth；
4) N+ type AlGaAs layer about 20nm are grown, doping concentration is 1 × 1018cm-3, control thickness and doping concentration so that
HEMT pipes are enhanced；
5) N+ type GaAs thickness about 300nm are grown, doping concentration is 3.5 × 1018cm-3；
6) mesa etch isolation active area；
7) grown silicon nitride；
8) photoetching silicon nitride layer, source-drain electrode domain is carved, carries out N+ ion implantings, formed source electrode and drain electrode, remove silicon nitride；
9) photoresist is coated, photoetching removes the photoresist of electrode contact locations；
10) it is evaporated in vacuo gold germanium ni au；
11) peel off, alloying forms source, leakage Ohm contact electrode；
12) photoresist is coated, photoetching removes the photoresist of gate location；
13) growth thickness is 0.5 μm of Ti/Pt/Au；
14) metal on photoresist and photoresist is removed, forms the grid of Schottky contacts；
15) photoresist is coated, makes lead by lithography, pulls down pole plate and the window in clamped beam anchor area；
16) Au that a layer thickness is 0.3 μm is grown；
17) photoresist is removed, forms lead, drop-down pole plate, the anchor area of clamped beam；
18) depositing insulating layer, 0.1 μm of Si is grown using epitaxy techniquexN1-xInsulating barrier；
19) photoetching removes unnecessary insulating barrier, only retains the insulating barrier above drop-down pole plate；
20) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retains the sacrifice below clamped beam
Layer；
21) one layer of down payment for being used to electroplate is grown：Ti/Au/Ti is evaporated, as seed layer thickness 50/150/30nm；
22) photoresist is coated, makes the window of clamped beam, anchor area and connecting line by lithography；
23) one layer of gold is electroplated, its thickness is 2 μm；
24) photoresist is removed, while removes the layer gold on photoresist；
25) titanium/gold/titanium is anti-carved, corrodes Seed Layer, forms clamped beam and and connecting line；
26) polyimide sacrificial layer is removed, discharges MEMS clamped beams；
27) HEMT of preparation is connected with external circuit, forms frequency multiplier.
Distinguish whether be the structure standard it is as follows：
The double clamped beam switch double grid HEMT frequency multipliers of GaAs bases low-leakage current of the present invention, two grids are set up in parallel, and two
Individual clamped beam switch is suspended on two grids respectively by anchor area.Reference signal and feedback signal are carried in by anchor area respectively
On two clamped beam switches.The closure or off-state of clamped beam switch are controlled by direct current biasing, and actuation voltage is designed as
HEMT threshold voltage.When clamped beam switches off, gate voltage 0, HEMT cut-offs.When two clamped beam switches are by straight
When stream biasing drop-down closure is with gate contact, two-dimensional electron gas raceway groove is formed, and HEMT conductings, reference signal and feedback signal pass through
HEMT is multiplied, and drain electrode output includes the phase information of two signals, and by low pass filter, voltage controlled oscillator, divider feedback are followed
Ring, final voltage controlled oscillator output reference signal are multiplied by N frequency signal.In addition, drop-down close single clamped beam switch can be with
The amplification to individual signals is realized, meanwhile, another clamped beam for not being pulled down closure switchs high resistance area formed below, can be effective
Raising HEMT breakdown reverse voltage.
Claims (2)
1. the double clamped beam switch double grid frequency multipliers of a kind of GaAs base low-leakage current, it is characterised in that the HEMT of the frequency multiplier makes a living
Grow the enhanced HEMT on GaAs substrates (1), including intrinsic GaAs layers (2), intrinsic AlGaAs layers (3), N+AlGaAs layers
(4), source electrode (5), drain (6), grid (7), anchor area (8), clamped beam switch (9), drop-down pole plate (10), insulating barrier (11), lead to
Hole (12), lead (13)；There are intrinsic GaAs layers (2) on GaAs substrates (1), there are intrinsic AlGaAs layers on intrinsic GaAs layers (2)
(3), there are N+AlGaAs layers (4), source electrode (5) on intrinsic AlGaAs layers (3), drain electrode (6) switchs the two of (9) positioned at two clamped beams
Side, source electrode (5) ground connection, two grids (7) are set up in parallel, and are corresponded with two clamped beam switches (9), clamped beam switch (9)
Both ends be fixed in anchor area (8), clamped beam switch (9) in the middle part of is suspended on grid (7), drop-down pole plate (10) be arranged on
Between anchor area (8) and grid (7), drop-down pole plate (10) ground connection, insulating barrier (11) is covered on drop-down pole plate (10), and direct current is inclined
Put and acted on by high frequency choke coil and anchor area (8) on clamped beam switch (9), the actuation voltage of clamped beam switch (9) is designed as
HEMT threshold voltage；Lead (13) connects intrinsic GaAs layers (2) by through hole (12) respectively；
HEMT drain electrodes (6) output signal has two kinds of different working methods, and one kind is that selection first port (14) is inputted to low pass
Wave filter, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output access divider by the 3rd port (16),
Divider output signal is loaded on a clamped beam switch (9) as feedback signal by anchor area (8), forms backfeed loop,
Reference signal is loaded on another clamped beam switch (9) by anchor area (8), another work of HEMT drain electrode (6) output signals
It is that selection second port (15) directly exports amplified signal as mode；
When direct current biasing is less than actuation voltage, two clamped beam switches (9) do not contact with grid (7), when switching off, grid electricity
Press and end for 0, HEMT, can effectively reduce grid leakage current, reduce power consumption.
2. the double clamped beam switch double grid frequency multipliers of GaAs base low-leakage current according to claim 1, it is characterised in that Gu
The closure of strutbeam switch (9) is disconnected by direct current biasing control, when two clamped beams switches (9) are reaching or surpassing drop-down
Drop-down is realized under the direct current biasing of voltage, is contacted with grid (7), when switch closes, in the presence of gate voltage, forms two dimension electricity
Sub- gas channel, HEMT conductings, reference signal is realized with feedback signal by HEMT to be multiplied, and drain electrode (6) output includes two signals
Phase information, first port (14) input low pass filter is selected, filters out HFS, output is straight comprising phase information
Voltage is flowed, DC voltage inputs voltage controlled oscillator as control voltage, and the output frequency of voltage controlled oscillator is conditioned, regulating frequency
Signal afterwards transmits to divider, divider output signal through the 3rd port (16) and is loaded into clamped beam switch as feedback signal
(9) on, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, the port (17) of voltage controlled oscillator the 4th
Output frequency foFor N times of reference signal frequency：N×fref, realize the frequency multiplication of reference signal；
When only clamped beam switch (9) closure, when another clamped beam switch (9) is off, closure it is clamped
Beam switchs (9) Two-dimensional electron gas channel formed below, clamped beam switch (9) high resistance area formed below of disconnection, raceway groove and high resistant
The structure of area's series connection is advantageous to improve HEMT breakdown reverse voltage, the gating signal on clamped beam switch (9) only closed
It can be amplified by HEMT, amplified signal exports through second port (15), when the clamped beam of only loading reference signal switchs (9)
During closure, reference signal is amplified by HEMT, second port (15) output reference signal frequency frefAmplified signal, when only
When loading clamped beam switch (9) closure of feedback signal, feedback signal is amplified by HEMT, and feedback frequency signal is VCO
Device output frequency foAfter divider divided by N result：fo/ N, second port (15) output frequency are fo/ N amplified signal, break
The clamped beam switch (9) opened is also beneficial to reduce grid leakage current, reduces power consumption.
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| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
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2015
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| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735934A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method |
| WO2014169242A1 (en) * | 2013-04-12 | 2014-10-16 | The Regents Of The University Of California | Nanowire nanoelectromechanical field-effect transistors |
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| A Directional Inline-Type Millimeter-Wave MEMS Power Sensor for GaAs MMIC Applicaitons;Zhiqiang zhang et al;《Journal of Microelectromechanical Systems》;20150127;第2卷;第253-255页 * |
| Suspended Thermopile for Microwave Power Sensor Based on Buik MEMS and GaAs MMIC Technology;Zhaqiang Zhang et al;《IEEE SENSOR JOURNAL》;20150430;第15卷(第4期);第2019-2020页 * |
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