CN105024690B - The double clamped beams of silicon substrate low-leakage current can moving grid phase-locked loop circuit - Google Patents
The double clamped beams of silicon substrate low-leakage current can moving grid phase-locked loop circuit Download PDFInfo
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- CN105024690B CN105024690B CN201510378619.0A CN201510378619A CN105024690B CN 105024690 B CN105024690 B CN 105024690B CN 201510378619 A CN201510378619 A CN 201510378619A CN 105024690 B CN105024690 B CN 105024690B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 230000003321 amplification Effects 0.000 abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 phosphonium ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
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- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
Abstract
The movable gate MOSFET phase-locked loop circuit of the double clamped beams of silicon substrate low-leakage current of the present invention, by silicon substrate, the enhanced MOSFET of N-type, external low pass filter, voltage controlled oscillator, high frequency choke coil composition.MOSFET grid is two clamped beams being suspended on gate oxide, is controlled by direct current biasing, and actuation voltage is designed as MOSFET threshold voltage, and reference signal and feedback signal are loaded into two clamped beams respectively can be on moving grid.When two clamped beams can moving grid suspend do not contacted with gate oxide when, MOSFET cut-off, gate capacitance is smaller, can reduce grid leakage current.When two clamped beams can moving grid pull down contacted with gate oxide when, MOSFET is turned on, reference signal is multiplied defeated with feedback signal through MOSFET, and drain electrode output includes the phase informations of two signals, and PGC demodulation is realized by low pass filter and voltage controlled oscillator feedback cycle.Pull down single clamped beam can moving grid, amplification to individual signals can be achieved, circuit has multi-functional.
Description
Technical field
The present invention proposes the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current, and (metal oxide semiconductor field-effect is brilliant
Body pipe) phase-locked loop circuit, belong to the technical field of microelectromechanical systems.
Background technology
Phaselocked loop is that one kind realizes frequency and phase locked technology using feedback control principle, when the frequency of reference signal
Or phase, when changing, phaselocked loop can detect this change, and adjust output frequency by the reponse system of inside, directly
Reach both with frequency, the lock-out state of constant phase difference to final output signal and reference signal.PHASE-LOCKED LOOP PLL TECHNIQUE is numerous
There are application, such as radio communication, radar, DTV, broadcast in field.Current wide variety of PHASE-LOCKED LOOP PLL TECHNIQUE has simulation to lock
Xiang Huan, hybrid phase-locked loop and digital phase-locked loop.They the advantages of are that precision is very high, but have circuit structure it is complicated,
Larger-size shortcoming.Importantly, the presence of the MOSFET element grid leakage current of traditional structure also causes electricity in circuit
The dynamic power consumption increase on road.
With the development of microelectric technique, modern PCS Personal Communications System and radar system require that phase-locked loop circuit has simply
Structure, small volume and small power consumption.MEMS system has small volume, low in energy consumption, low cost and other advantages, makes above-mentioned requirements
It is possibly realized, in addition, MEMS fixed beam structures have a wide range of applications because possessing controllability.The purpose of the present invention is exactly to carry
Go out a kind of movable gate MOSFET phase-locked loop circuit of the double clamped beams of silicon substrate low-leakage current.
The content of the invention
Technical problem:In order to reduce the leakage current in circuit, reduce power consumption, while also make the structure of circuit simple, volume
Diminish, the present invention provides a kind of double clamped beams of silicon substrate low-leakage current movable gate MOSFET phase-locked loop circuit.
Technical scheme：In order to solve the above technical problems, the present invention uses following technical scheme：
The double clamped beams of the silicon substrate low-leakage current of the present invention can moving grid phase-locked loop circuit MOSFET be the enhanced MOSFET of N-type,
Growth on a silicon substrate, including source electrode, drain electrode, gate oxide, anchor area, clamped beam can moving grid, pull down pole plate, insulating barrier, through hole,
Lead, source ground；
MOSFET grid using two clamped beams being suspended on gate oxide can moving grid, clamped beam can moving grid two
End is fixed in anchor area, sets drop-down pole plate to be on a silicon substrate arranged between anchor area and gate oxide, insulating barrier is covered in
Pull down pole plate on, lead by through hole respectively with including source electrode, drain electrode connect, clamped beam can moving grid controlled by direct current biasing, directly
Stream biasing by anchor area act on clamped beam can on moving grid, clamped beam can moving grid actuation voltage be designed as MOSFET threshold value it is electric
Pressure；
MOSFET drain electrode output signal has two kinds of different working methods, and one kind is selection first port access low pass filtered
Ripple device, low pass filter output access voltage controlled oscillator, the 3rd port of voltage controlled oscillator output selection pass through as feedback signal
Anchor area, which is loaded into a clamped beam, to form backfeed loop with MOSFET, reference signal is loaded into another by anchor area on moving grid
Individual clamped beam can be on moving grid, and another working method of MOSFET drain electrode output signal is that the directly output of selection second port is put
Big signal.
In the phase-locked loop circuit, when direct current biasing is less than actuation voltage, two clamped beams can moving grid be suspended in gate oxidation
When on layer, MOSFET cut-offs, gate capacitance is smaller, can effectively reduce grid leakage current, reduces power consumption；
When direct current biasing reaches or surpasses actuation voltage, two clamped beams can moving grid pull down when being contacted with gate oxide,
MOSFET is turned on, and reference signal is multiplied with feedback signal through MOSFET, and drain electrode output includes the phase information of two signals, selection
First port accesses low pass filter, and low pass filter output is the DC voltage containing phase information, DC voltage conduct
Control voltage accesses voltage controlled oscillator, and the output frequency of voltage controlled oscillator is loaded into as feedback signal by DC voltage regulation
Clamped beam can be on moving grid, and by the feedback cycle of loop, final feedback signal and reference signal frequency are equal, constant phase difference,
Locking is realized, the signal after locking is exported by the port of voltage controlled oscillator the 4th；
When only clamped beam can moving grid drop-down when, the clamped beam that is pulled down can moving grid raceway groove formed below, not by under
It can be high resistance area below moving grid to draw clamped beam, and the structure that raceway groove is connected with high resistance area plays a part of improving breakdown reverse voltage,
The clamped beam being only pulled down can be on moving grid gating signal can be amplified by MOSFET, selection is exported by second port and put
Big signal, when only loading reference signal clamped beam can moving grid be pulled down when, second port output reference signal frequency fref's
Amplified signal, when only loading feedback signal clamped beam can moving grid be pulled down when, the frequency of feedback signal is voltage controlled oscillator
Output frequency f0, second port output frequency is f0Amplified signal.
Beneficial effect：Compared with existing phase-locked loop circuit, this double clamped beams of new silicon substrate low-leakage current can moving grid
MOSFET phase-locked loop circuits have the advantages of following notable：
1st, using clamped beam can moving grid structure, realize the disengaging of grid and gate oxide in MOSFET cut-off states, have
Reduce circuit leakage current, reduce power consumption the advantages of；
2nd, clamped beam can moving grid structure to facilitate circuit controllable, circuit the phase-locked function can be not only realized, in addition, drop-down is single
Individual clamped beam can moving grid, can be achieved independent amplification to single gating signal, another clamped beam not being pulled down can be under moving grid
It is square into high resistance area, be advantageous to increase breakdown reverse voltage, make Multifunctional circuit, extend application；
3rd, using MEMS clamped beam technologies so that simplify the structure, volume miniaturization.
Brief description of the drawings
Fig. 1 is the top view of the movable gate MOSFET phase-locked loop circuit of the double clamped beams of silicon substrate low-leakage current of the present invention.
Fig. 2 is the A-A ' of the movable gate MOSFET phase-locked loop circuit of the double clamped beams of Fig. 1 silicon substrates low-leakage currents to profile.
Fig. 3 is the B-B ' of the movable gate MOSFET phase-locked loop circuit of the double clamped beams of Fig. 1 silicon substrates low-leakage currents to profile.
Fig. 4 is that two clamped beams of the movable gate MOSFET of Fig. 1 silicon substrate clamped beams can raceway groove schematic diagram of moving grid when pulling down.
Fig. 5 be the single clamped beam of the movable gate MOSFET of Fig. 1 silicon substrate clamped beams can moving grid drop-down when raceway groove schematic diagram.
Have in figure：Silicon substrate 1, source electrode 2, drain electrode 3, gate oxide 4, anchor area 5, clamped beam can moving grid 6, pull down pole plate 7, absolutely
Edge layer 8, through hole 9, lead 10, first port 11, second port 12, the 3rd port 13, the 4th port 14.
Embodiment
The movable gate MOSFET phase-locked loop circuit of the double clamped beams of silicon substrate low-leakage current of the present invention, including the enhancing of silicon substrate, N-type
Type MOSFET, and external low pass filter, voltage controlled oscillator, high frequency choke coil.Wherein, MOSFET is grown in silicon substrate
On, including source electrode, drain electrode, gate oxide, two clamped beams can moving grid, anchor area, drop-down pole plate, insulating barriers.Source electrode and drain electrode phase
To setting, gate oxide is connected between source and drain.Different from conventional MOS FET, the MOSFET grids in the present invention are by anchor area
Across and two clamped beams being suspended on gate oxide can moving grid.Anchor area is arranged on gate oxide both sides, and clamped beam is movable
By respective anchor area on gate oxide, drop-down pole plate is arranged between gate oxide and anchor area grid.
In phase-locked loop circuit, the feedback signal of reference signal and voltage controlled oscillator is carried in two clamped beams respectively can moving grid
On.Direct current biasing acts on clamped beam by high frequency choke coil and anchor area can be on moving grid, and clamped beam can the design of moving grid actuation voltage
For MOSFET threshold voltages.
When direct current biasing is less than actuation voltage, clamped beam can moving grid do not contacted still in suspended state with gate oxide,
Gate capacitance is smaller, can effectively reduce grid leakage current.
When direct current biasing reaches or more than actuation voltage, two clamped beams can moving grid pass through direct current biasing and realize drop-down
When being contacted with gate oxide, MOSFET conductings, reference signal is multiplied with feedback signal by MOSFET, and drain electrode output contains two
Phase information between signal.Low pass filter is filtered to drain electrode output, the output direct current relevant with phase information
Control voltage.Voltage controlled oscillator adjusts output frequency, added again as new feedback signal in the presence of direct-current control voltage
It is downloaded on MOSFET.The continuous ringing of loop, until final feedback signal is consistent with the frequency of reference signal, phase-locked loop circuit
Complete locking.
When only clamped beam can moving grid drop-down when, corresponding clamped beam can form raceway groove under moving grid, and another is not by under
The clamped beam of drawing can form high resistance area under moving grid, and raceway groove and high resistance area cascaded structure are advantageous to improve the reverse breakdown electricity of device
Pressure.Now, MOSFET amplification outputs can be passed through by only pulling down the gating signal that clamped beam can be on moving grid.So as to by one
Clamped beam can moving grid independent control, realize the amplification to individual signals, expand the application of circuit.
The double movable gate MOSFET phase-locked loop circuits of clamped beam of silicon substrate low-leakage current of the present invention are done below in conjunction with the accompanying drawings into
One step is explained.
As shown in figure 1, the double movable gate MOSFET phase-locked loop circuits of clamped beam of the silicon substrate low-leakage current of the present invention serve as a contrast including silicon
Bottom 1, the enhanced MOSFET of N-type on a silicon substrate, external low pass filter, voltage controlled oscillator, high frequency choke coil are set.Its
In, MOSFET includes source electrode 2, drain electrode 3, gate oxide 4, anchor area 5, clamped beam can moving grid 6, pull down pole plate 7, insulating barrier 8, through hole
9, lead 10, wherein, source electrode 2 is grounded.
Source electrode 2 and drain electrode 3 are oppositely arranged, and gate oxide 4 is connected between source and drain, and anchor area 5 is arranged on the two of gate oxide 4
Side, clamped beam can moving grid 6 by respective anchor area on gate oxide, drop-down pole plate 7 be arranged on gate oxide 4 and anchor area
Between 5.Insulating barrier 8 is covered on drop-down pole plate 7.
The output of drain electrode 3 has two kinds of different working methods, a kind of to access low pass filter, LPF through first port 11
Device output access voltage controlled oscillator, voltage controlled oscillator output the 3rd port 13 of selection accesses one as feedback signal by anchor area 5
Individual clamped beam can moving grid 6, reference signal is loaded into another clamped beam by anchor area 5 can be on moving grid.The another kind of the output of drain electrode 3
Working method is directly to export amplified signal through second port 12.
Direct current biasing acts on clamped beam by high frequency choke coil and anchor area 5 can be on moving grid 6, and drop-down pole plate 7 is grounded.It is clamped
Beam can the actuation voltage of moving grid 6 be designed as MOSFET threshold voltage.
When direct current biasing is less than actuation voltage, two clamped beams can moving grid 6 be in suspended state and do not connect with gate oxide 4
When touching, MOSFET cut-offs.Due to clamped beam can moving grid 6 disengaged with gate oxide 4, gate capacitance is smaller, can effectively subtract
The generation of small leakage current, reduce circuit power consumption.
When direct current biasing reaches or more than actuation voltage, two clamped beams can moving grid 6 pull down and contacted with gate oxide 4
When, conduct electrons raceway groove is produced between source electrode 2 and drain electrode 3, as shown in figure 4, MOSFET is turned on.Reference signal and feedback signal are led to
Cross MOSFET and realize and be multiplied, the output of drain electrode 3 contains the phase information between two signals, selects first port 11 to input to low
Bandpass filter is filtered, and HFS is filtered out, the output DC voltage relevant with phase difference.DC voltage can represent
For：
UL=Kcos ((ωref-ωback)t+φ) (1)
Wherein K is MOSFET gain coefficients, ωrefOn the basis of signal angular frequency, ωbackFor feedback signal angular frequency, φ is
Proper phase is poor.DC voltage adjusts the output frequency of voltage controlled oscillator as control voltage.Voltage controlled oscillator after regulation is defeated
Go out frequencies omegaoIt can be expressed by following formula：
Voltage controlled oscillator output is re-loaded to clamped beam as new feedback signal can be on moving grid 6, until finally feeding back
Signal is consistent with the frequency of reference signal, constant phase difference
ωback=ωo=ωref (3)
Phase-locked loop circuit completes locking, and voltage controlled oscillator output signal frequency is consistent with reference signal.
When only clamped beam can moving grid 6 be pulled down and contacted with gate oxide 4, another clamped beam can moving grid 6 be in
During suspended state.The clamped beam being pulled down can 6 raceway groove formed below of moving grid, the clamped beam not being pulled down can moving grid 6 it is formed below
High resistance area, as shown in figure 5, the structure that raceway groove is connected with high resistance area can effectively improve the breakdown reverse voltage of device.Now,
The clamped beam being only pulled down can be on moving grid 6 signal can be amplified by MOSFET, amplified signal selection second port 12 is defeated
Go out.When only loading reference signal clamped beam can moving grid 6 be pulled down when, the output frequency of second port 12 is reference signal frequency
frefAmplified signal, when only loading feedback signal clamped beam can moving grid 6 be pulled down when, the frequency of feedback signal is voltage-controlled
The output frequency f of oscillatoro, the output frequency of second port 12 is foAmplified signal.Circuit has multi-functional.
The preparation method of the movable gate MOSFET phase-locked loop circuit of the double clamped beams of silicon substrate low-leakage current of the present invention is as follows：
1) p-type Si substrates are prepared；
2) bottom oxide growth
3) deposited silicon nitride；
4) photoetching, etch silicon nitride form MOSFET source and drain electrode；
5) field aoxidizes；
6) silicon nitride and basal oxygen sheet are removed；
7) gate oxidation is carried out, adjusting threshold voltage, it is enhanced to make MOSFET；
8) deposit polycrystalline silicon, and photoetching, the polysilicon of the anchor zone position of clamped beam is retained；
9) plating evaporation growth Al；
10) photoresist is coated, retains the photoresist above pull-down electrode；
11) Al is anti-carved, forms pull-down electrode；
12) deposition insulating layer, the Si that 0.1 μm of epitaxial growthxN1-xInsulating barrier；
13) photoetching window, unnecessary Si is etched awayxN1-x：
14) photoresist is coated, retains the insulating barrier of pull-down electrode；
15) reactive ion etching is utilized, the silicon nitride medium layer formed in pull-down electrode；
16) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retaining clamped beam can be below moving grid
Sacrifice layer；
17) plating evaporation growth Al；
18) photoresist is coated, retains the photoresist above clamped beam；
19) Al is anti-carved, forming clamped beam can moving grid；
20) photoresist is coated, photoetching hand-hole, injects N+ phosphonium ions, forms MOSFET source and drain electrode；
21) through hole and lead are made, coats photoresist, removes the photoresist of source-drain electrode contact zone, is evaporated in vacuo gold germanium
Ni au, peel off, alloying forms Ohmic contact；
22) PMGI sacrifice layers are discharged, form the clamped beam of suspension；
23) MOSFET of preparation is connected with external circuit, forms phase-locked loop circuit.
Distinguish whether be the structure standard it is as follows：
The double movable gate MOSFET phase-locked loop circuits of clamped beam of silicon substrate low-leakage current of the present invention use two clamped beam conducts
MOSFET grid, clamped beam can moving grid controlled by direct current biasing, actuation voltage is designed as MOSFET threshold voltage, and point
Input not as reference signal and feedback signal.MOSFET end when, clamped beam can moving grid do not contacted with gate oxide, grid
Electric capacity is less than conventional MOS FET, reduces grid leakage current, reduces power consumption.Two clamped beams can moving grid pull down and gate oxidation
During layer contact, reference signal is multiplied with feedback signal by MOSFET, and drain electrode output includes phase information, by LPF
Device, the locking of phase is realized after voltage controlled oscillator feedback cycle.In addition, one clamped beam of drop-down can moving grid, corresponding clamped beam can
Gating signal on moving grid can be amplified by MOSFET to be exported, and another clamped beam not being pulled down can moving grid high resistant formed below
Area, be advantageous to improve breakdown reverse voltage, it is possible to achieve the amplification to individual signals, circuit have multi-functional.
Claims (1)
1. a kind of double clamped beams of silicon substrate low-leakage current can moving grid phase-locked loop circuit, it is characterised in that phase-locked loop circuit MOSFET is
The enhanced MOSFET of N-type, it is grown on silicon substrate (1), including source electrode (2), drain (3), gate oxide (4), anchor area (5), Gu
Strutbeam can moving grid (6), drop-down pole plate (7), insulating barrier (8), through hole (9), lead (10), source electrode (2) ground connection；
MOSFET grid using two clamped beams being suspended on gate oxide (4) can moving grid (6), clamped beam can moving grid
(6) both ends are fixed in anchor area (5), and the drop-down pole plate (7) being arranged on silicon substrate (1) is arranged on anchor area (5) and gate oxidation
Between layer (4), insulating barrier (8) is covered in drop-down pole plate (7), lead (10) by through hole (9) respectively with source electrode (2), drain electrode
(3) connect, clamped beam can moving grid (6) controlled by direct current biasing, direct current biasing acts on clamped beam by anchor area (5) can moving grid
(6) on, clamped beam can the actuation voltage of moving grid (6) be designed as MOSFET threshold voltage；
MOSFET drain electrode (3) output signal has two kinds of different working methods, and one kind is that selection first port (11) access is low
Bandpass filter, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output the 3rd port (13) of selection is as feedback
Signal is loaded into a clamped beam by anchor area (5) to form backfeed loop with MOSFET, reference signal passes through on moving grid (6)
Anchor area (5) is loaded into another clamped beam can be on moving grid (6), another working method of MOSFET drain electrode (3) output signal
It is that selection second port (12) directly exports amplified signal；
Can be in moving grid phase-locked loop circuit in the double clamped beams of silicon substrate low-leakage current, when direct current biasing is less than actuation voltage, two are clamped
Beam can moving grid (6) when being suspended on gate oxide (4), MOSFET cut-offs, gate capacitance is smaller, can effectively reduce grid
Leakage current, reduce power consumption；
When direct current biasing reaches or surpasses actuation voltage, two clamped beams can moving grid (6) pull down and contacted with gate oxide (4)
When, MOSFET conductings, reference signal is multiplied with feedback signal through MOSFET, and phase difference of drain electrode (3) output comprising two signals is believed
Breath, first port (11) access low pass filter is selected, low pass filter output is the DC voltage containing phase information, directly
Voltage is flowed as control voltage access voltage controlled oscillator, and the output frequency of voltage controlled oscillator is by DC voltage regulation, as feedback
Signal loading can be on moving grid (6), by the feedback cycle of loop to clamped beam, final feedback signal and reference signal frequency phase
Deng, constant phase difference, locking is realized, the signal after locking passes through the port (14) of voltage controlled oscillator the 4th and exported；
When only clamped beam can moving grid (6) drop-down when, the clamped beam that is pulled down can moving grid (6) raceway groove formed below, not by
Drop-down clamped beam can be high resistance area below moving grid (6), and the structure that raceway groove is connected with high resistance area, which plays, improves breakdown reverse voltage
Effect, the gating signal that the clamped beam being only pulled down can be on moving grid (6) can be amplified by MOSFET, and selection passes through the second end
Mouthful (12) output amplified signal, when only loading reference signal clamped beam can moving grid (6) be pulled down when, second port (12) is defeated
Go out reference signal frequency frefAmplified signal, when only loading feedback signal clamped beam can moving grid (6) be pulled down when, feedback
The frequency of signal is the output frequency f of voltage controlled oscillator0, second port (12) output frequency is f0Amplified signal.
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| CN201510378619.0A CN105024690B (en) | 2015-07-01 | 2015-07-01 | The double clamped beams of silicon substrate low-leakage current can moving grid phase-locked loop circuit |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
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| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
Non-Patent Citations (2)
| Title |
|---|
| 双栅极场效应管图像中频放大器;听声;《电子技术》;19850401(第3期);7-10页 * |
| 砷化镓双栅场效应管及其在微波电路中的应用;阮德兴;《电讯技术》;19870831;第27卷(第4期);26-35页 * |
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