CN102735926A - Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method - Google Patents
Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method Download PDFInfo
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- CN102735926A CN102735926A CN2012102046547A CN201210204654A CN102735926A CN 102735926 A CN102735926 A CN 102735926A CN 2012102046547 A CN2012102046547 A CN 2012102046547A CN 201210204654 A CN201210204654 A CN 201210204654A CN 102735926 A CN102735926 A CN 102735926A
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Abstract
The invention discloses a frequency detector based on a micro-mechanical gallium arsenide-based clamped beam and a detection method. The frequency detector comprises a power divider (PD), a 90-DEG phase shifter (PS), a low-pass filter (F) and a gallium arsenide metal-oxide-semiconductor field effect transistor, wherein the power divider is used for receiving a microwave signal to be detected, dividing the microwave signal to be detected into two branch signals with the same amplitude and phase, namely a first path of microwave signal and a second path of microwave signal, and respectively outputting the two paths of microwave signal to the gallium arsenide metal-oxide-semiconductor field effect transistor and the 90-DEG phase shifter. The method comprises the following steps of: when direct current offset is loaded to a first pull-down electrode (81) and a second pull-down electrode (82), and a cantilever beam (6) is pulled down and contacted with a gate (4), simultaneously loading the two paths of microwave signals to the gate (4); and through a capacitor and a filter, detecting the size of the saturation current of a source (2) and a drain (3), so frequency measurement is realized. The invention has the advantage of simple structure.
Description
Technical field
The present invention proposes frequency detector and preparation method, belong to the technical field of microelectromechanical systems (MEMS) based on the GaAs based clamped beam of micromechanics.
Background technology
Microwave frequency is the very important parameter of microwave.The microwave signal frequency detection system all has at aspects such as radar, wireless telecommunications extremely widely to be used.Existing microwave frequency detection technique mainly is based on principles such as process of heterodyning, counting method resonant method, and they have high precision and wide band advantage, yet its maximum shortcoming is need relatively more accurate surveying instrument.Along with science and technology development, modern PCS Personal Communications System requires microwave frequency detector to have simple structure, little volume and little dc power.In recent years,, and the MEMS fixed beam structure carried out deep research, made based on the GaAs based clamped beam of micromechanics and realize that the microwave frequency detector of above-mentioned functions becomes possibility along with the fast development of MEMS technology.
Summary of the invention
Technical matters:The purpose of this invention is to provide a kind of frequency detector and detection method based on the GaAs based clamped beam of micromechanics; Through pull-down electrode control MEMS clamped beam; Make two branch road frequencies identical but exist the microwave signal of certain phase differential to be loaded into simultaneously on the grid of gallium arsenide MESFET (metal semiconductor field effect transis); Through the detection resources drain saturation current, extrapolate the frequency of microwave signal to be measured.
Technical scheme:For solving the problems of the technologies described above, the invention provides a kind of frequency detector based on the GaAs based clamped beam of micromechanics, this frequency detector comprises
Power divider, 90-degree phase shifter, low-pass filter and gallium arsenide metal semiconductor field effect transis,
Power divider; Be used for receiving and treat the side microwave signal; And this is treated that the side microwave signal is divided into amplitude, two tributary signals that phase place is identical, i.e. the first via microwave signal and the second tunnel microwave signal, and export to gallium arsenide metal semiconductor field effect transis and 90-degree phase shifter respectively;
90-degree phase shifter is used to receive said the second tunnel microwave signal, with this signal produce one with phase shift that frequency is directly proportional after, output Third Road microwave signal is to the gallium arsenide metal semiconductor field effect transis;
Low-pass filter is used for linking to each other with the gallium arsenide metal semiconductor field effect transis through capacitance, and the high-frequency signal of its output of elimination obtains the current signal with frequency dependence;
The gallium arsenide metal semiconductor field effect transis is used to realize the measurement of frequency; Wherein,
The gallium arsenide metal semiconductor field effect transis comprises gallium arsenide substrate, is grown in lip-deep source electrode and the drain electrode that is used to export saturation current of gallium arsenide substrate, and source electrode and drain electrode are oppositely arranged; Be respectively equipped with the first clamped beam anchor district in the outside of source electrode and drain electrode; The second clamped beam anchor district is arranged on grid between source electrode and the drain electrode, is arranged on above this grid and the clamped beam relative with grid; The both sides of clamped beam respectively with the first clamped beam anchor district, the second clamped beam anchor district links to each other;
Between the grid and the first fixed beam anchor district, be provided with first pull-down electrode, between the grid and the second fixed beam anchor district, be provided with second pull-down electrode, first pull-down electrode and second pull-down electrode are insulated dielectric layer respectively and cover;
Source ground, drain electrode connects positive voltage; Be communicated with through N type raceway groove between source electrode and the drain electrode, direction of current is by drain-to-source; Source electrode forms ohmic contact regions with drain electrode by gold and N type heavily doped region and constitutes;
Grid is made up of the Schottky contact region that gold and N type thin layer form, and grid connects negative voltage, and it is used to adjust the width of N type raceway groove depletion layer, changes the size of the saturation current between the source drain;
The first via microwave signal of power divider output is exported to the first clamped beam anchor district;
The Third Road microwave signal of 90-degree phase shifter is exported to the second clamped beam anchor district of gallium arsenide metal semiconductor field effect transis.
The present invention also provides a kind of frequency detecting method based on the GaAs based clamped beam of micromechanics, and this method comprises the steps:
Source electrode and drain electrode are used to export saturation current, form ohmic contact regions by gold and N type heavily doped region and constitute; Under gallium arsenide metal semiconductor field effect transis normal operation, source ground, drain electrode connects positive voltage; Electronics in the N type raceway groove will flow to drain electrode from source electrode; Direction of current is by drain-to-source, and grid is made up of the Schottky contact region that gold and N type thin layer form, and connects negative voltage;
Microwave signal to be measured is divided into amplitude, identical two tributary signals of phase place through power divider, and one road signal is connected to the first clamped beam anchor district, and another road signal is through being connected to the second clamped beam anchor district after one the 90 degree linear phase shifter; When not having direct current biasing on first pull-down electrode and second pull-down electrode, clamped beam is positioned at the top of grid, and the gallium arsenide metal semiconductor field effect transis is in non-frequency detecting state;
When first pull-down electrode and second pull-down electrode load direct current biasing, clamped beam is by drop-down and when contact with grid, two way microwave signals is loaded on the grid simultaneously, thereby the saturation current that changes between the source drain is big or small; After electric capacity and wave filter, detect the final measurement that realizes frequency of size of source electrode drain saturation current.
Beneficial effect:It is little, simple in structure that frequency detector based on the GaAs based clamped beam of micromechanics of the present invention not only has a volume, the advantage that is easy to measure, and have low dc power, be easy to integrated and compatible advantage with the GaAs monolithic integrated microwave circuit.
Description of drawings
Fig. 1 is based on the vertical view of the frequency detector of the GaAs based clamped beam of micromechanics;
Fig. 2 is based on the A-A sectional view of the frequency detector of the GaAs based clamped beam of micromechanics;
Fig. 3 is based on the B-B sectional view of the frequency detector of the GaAs based clamped beam of micromechanics;
Comprise among the figure: GaAs substrate 1, source electrode 2, drain electrode 3, grid 4, N type raceway groove
5, MEMS clamped beam 6, the anchor district 7 of MEMS clamped beam, the pull-down electrode 8 of MEMS clamped beam, silicon nitride medium layer 9, connecting line 10, direct current biasing press welding block 11, the first microwaves input press welding block 12, the second microwaves input press welding block 13.
Embodiment
Below in conjunction with accompanying drawing the present invention is further specified.
Referring to Fig. 1-3, the frequency detector based on the GaAs based clamped beam of micromechanics provided by the invention, frequency detector comprises
Power divider PD, 90-degree phase shifter PS, low-pass filter F and gallium arsenide metal semiconductor field effect transis,
Power divider; Be used for receiving and treat the side microwave signal; And this is treated that the side microwave signal is divided into amplitude, two tributary signals that phase place is identical, i.e. the first via microwave signal and the second tunnel microwave signal, and export to gallium arsenide metal semiconductor field effect transis and 90-degree phase shifter respectively;
90-degree phase shifter is used to receive said the second tunnel microwave signal, with this signal produce one with phase shift that frequency is directly proportional after, output Third Road microwave signal is to the gallium arsenide metal semiconductor field effect transis;
Low-pass filter is used for linking to each other with the gallium arsenide metal semiconductor field effect transis through capacitance, and the high-frequency signal of its output of elimination obtains the current signal with frequency dependence;
The gallium arsenide metal semiconductor field effect transis is used to realize the measurement of frequency; Wherein,
The gallium arsenide metal semiconductor field effect transis comprises gallium arsenide substrate 1; Be grown in the gallium arsenide substrate 1 lip-deep source electrode 2 and drain electrode 3 that is used to export saturation current; Source electrode 2 is oppositely arranged with drain electrode 3, is respectively equipped with 71, the second clamped beam anchor districts 72, the first clamped beam anchor district in the outside of source electrode 2 and drain electrode 3; Be arranged on source electrode 2 and drain grid 4 between 3; Be arranged on above this grid 4 and the clamped beam 6 relative with grid 4, the both sides of clamped beam 6 link to each other with 71, the second clamped beam anchor districts 72, the first clamped beam anchor district respectively;
Between the grid 4 and the first fixed beam anchor district 71, be provided with first pull-down electrode 81, between the grid 5 and the second fixed beam anchor district 72, be provided with second pull-down electrode, 82, the first pull-down electrode 81 and second pull-down electrode 82 and be insulated dielectric layer 9 coverings respectively;
Source electrode 2 ground connection, drain electrode 3 connects positive voltage; Source electrode 2 and drain between 3 is communicated with through N type raceway groove 5, direction of current by drain electrode 3 to source electrode 2; Source electrode 2 forms ohmic contact regions with drain electrode 3 by gold and N type heavily doped region and constitutes;
Grid 4 is made up of the Schottky contact region that gold and N type thin layer form, and grid 4 connects negative voltage, and it is used to adjust the width of N type raceway groove 5 depletion layers, changes the size of the saturation current between source electrode 2 drain electrodes 3;
The first via microwave signal of power divider output is exported to the first clamped beam anchor district 71;
The Third Road microwave signal of 90-degree phase shifter is exported to the second clamped beam anchor district 72 of gallium arsenide metal semiconductor field effect transis.
The present invention also provides a kind of frequency detecting method based on the GaAs based clamped beam of micromechanics, and this method comprises the steps:
Source electrode 2 is used to export saturation current with drain electrode 3, forms ohmic contact regions by gold and N type heavily doped region and constitutes; Under gallium arsenide metal semiconductor field effect transis normal operation, source electrode 2 ground connection, drain electrode 3 connects positive voltage; Electronics in the N type raceway groove will flow to drain electrode 3 from source electrode 2; To source electrode 2, grid 4 is made up of the Schottky contact region that gold and N type thin layer form direction of current, connects negative voltage by drain electrode 3;
Microwave signal to be measured is divided into amplitude, identical two tributary signals of phase place through power divider PD, and one road signal is connected to the first clamped beam anchor district 71, and another road signal is through being connected to the second clamped beam anchor district 72 after one the 90 degree linear phase shifter; When not having direct current biasing on first pull-down electrode 81 and second pull-down electrode 82, clamped beam 6 is positioned at the top of grid 4, and the gallium arsenide metal semiconductor field effect transis is in non-frequency detecting state;
When first pull-down electrode 81 and second pull-down electrode 82 load direct current biasings, clamped beam 6 is by drop-down and when contact with grid 4, two way microwave signals is loaded on the grid 4 simultaneously, thereby the saturation current that changes between source electrode 2 drain electrodes 3 is big or small; After electric capacity and wave filter, detect the final measurement that realizes frequency of size of source electrode 2 drain electrodes 3 saturation currents.
Frequency detector based on the GaAs based clamped beam of micromechanics of the present invention mainly comprises MESFET and two parts of MEMS fixed beam structure.Wherein, MESFET comprises source electrode, drain electrode, grid, N type raceway groove; The MEMS fixed beam structure comprises anchor district, pull-down electrode and the dielectric layer of MEMS clamped beam, beam.This structure is substrate with GaAs:
Be used to detect the source electrode and the drain electrode of the size of saturation current, form ohmic contact regions by gold and N type heavily doped region and constitute.Under GaAs MESFET normal operation, source ground, drain electrode connects positive voltage, N type raceway groove
In electronics will flow to drain electrode from source electrode, direction of current is by drain-to-source.
Grid is made up of the Schottky contact region that gold and N type thin layer form, and grid connects negative voltage.The effect of negative polarity grid is the width of adjustment raceway groove depletion layer, changes the size of the saturation current between the source-drain electrode.
This frequency detector has a MEMS fixed beam structure, and it is across on grid, two pull-down electrode be positioned at clamped beam below, and be distributed in the both sides of grid, the medium silicon nitride of insulation covers on the pull-down electrode.Microwave signal to be measured is divided into amplitude and identical two tributary signals of phase place through power splitter, is connected respectively on the corresponding press welding block.When not having direct current biasing on two pull-down electrode, the MEMS clamped beam is positioned at the up attitude, and the saturation current between the GaAs MESFET source-drain electrode is constant; When on two pull-down electrode, loading direct current biasing with the MEMS clamped beam is drop-down when contacting with grid; The signal of branch road one is through after 90 ° the phase shifter; Be loaded into simultaneously on the grid of GaAs MESFET through the MEMS clamped beam with the signal of branch road two, thereby change the saturation current size between the source-drain electrode.Therefore, after electric capacity and wave filter, the size of detection resources drain saturation current finally can realize the measurement of microwave signal frequency.
The specific embodiments based on the frequency detector of the GaAs based clamped beam of micromechanics of this paper invention is following:
On GaAs substrate 1, be provided with source electrode 2, drain electrode 3, grid 4, N type raceway groove 5, MEMS clamped beam anchor district 7 and pull-down electrode 8.
Source electrode 2 and drain electrode 3 are used to detect the size of saturation current, form ohmic contact regions by gold and N type heavily doped region and constitute.Under GaAs MESFET normal operation, source electrode 2 ground connection, drain electrode 3 connects positive voltage, and the electronics in the N type raceway groove will flow to drain electrode 3 from source electrode 2, and direction of current is by draining 3 to source electrode 2.
Grid 4 is made up of the Schottky contact region that gold and N type thin layer form, and grid 4 connects negative voltage.The effect of negative polarity grid 4 is width of adjustment raceway groove 5 depletion layers, changes the size of the saturation current between source electrode 2 drain electrodes 3.
This frequency detector has a MEMS fixed beam structure 6, and it is across on grid 4, two pull-down electrode 8 be positioned at clamped beam 6 below, be distributed in the both sides of grid 4, the medium silicon nitride 9 of insulation covers on the pull-down electrode 8.Microwave signal to be measured is divided into two amplitudes, identical two tributary signals of phase place through power splitter, is connected respectively on the corresponding press welding block 12,13.When not having direct current biasing on two pull-down electrode, MEMS clamped beam 6 is positioned at the up attitude, and the saturation current between the GaAs MESFET source-drain electrode is constant; When on two pull-down electrode 8, loading direct current biasing with MEMS clamped beam 6 is drop-down when contacting with grid 4; The signal of branch road one is through being loaded on the grid 4 of GaAs MESFET through MEMS clamped beam 6 with the signal of branch road two after 90 ° the phase shifter simultaneously, thereby changes the saturation current size between source electrode 2 drain electrodes 3.Therefore, after electric capacity and wave filter, detect the final measurement that realizes two supported signal frequencies of size of source electrode 2 drain electrodes 3 saturation currents.
Preparation method based on the frequency detector of the GaAs based clamped beam of micromechanics is:
1) prepares the Semi-insulating GaAs substrate;
2) inject N type impurity, form N type thin layer on the GaAs surface;
3) photoresist beyond the grid region is removed in photoetching grid region;
4) electron beam evaporation titanium/platinum/gold;
5) peel off area of grid titanium/platinum/gold in addition;
6) titanium/platinum of heating evaporation/gold forms the Schottky barrier district, forms grid;
7) inject heavy doping N type impurity in the zone of needs formation source electrode and drain electrode, form N type heavily doped region;
8) short annealing of N type heavily doped region is handled;
9) source electrode and drain electrode photoresist are in addition removed in photoetching source electrode and drain electrode;
10) vacuum evaporation gold germanium nickel/gold;
11) peel off source class and the gold germanium nickel/gold that leaks beyond the level zone;
12) alloying forms Ohmic contact, forms source electrode and drain electrode;
13) photoetching: removal will retain the local photoresist of anchor district, press welding block and connecting line of pulling electrode, MEMS clamped beam;
14) evaporation ground floor gold, its thickness is 0.3
μ m
15) peel off pull-down electrode 8, semi-girder anchor district 7, press welding block and connecting line gold in addition, form anchor district, press welding block and the connecting line of pull-down electrode, MEMS clamped beam;
16) deposit and photoetching polyimide sacrificial layer: on the GaAs substrate, apply 1.6
μ mThick polyimide sacrificial layer requires to fill up pit, and the thickness of polyimide sacrificial layer has determined MEMS clamped beam and its below in the distance between the silicon nitride medium layer on the pull-down electrode; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
17) evaporation titanium/gold/titanium, its thickness is 500/1500/300: the down payment that evaporation is used to electroplate;
18) photoetching: removal will be electroplated local photoresist;
19) electrogilding, its thickness are 2
μ m
20) remove photoresist: remove and need not electroplate local photoresist;
21) anti-carve titanium/gold/titanium, the corrosion down payment forms the MEMS clamped beam;
22) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilization is down dried.
Distinguish whether to be the standard of this structure following:
Frequency detector based on the GaAs based clamped beam of micromechanics proposed by the invention has the MEMS clamped beam across above the grid of MESFET; Below the MEMS clamped beam, designed two pull-down electrode, when on pull-down electrode, loading direct current biasing, the MEMS clamped beam is by drop-down; The intermediate portion contacts with grid; Measured signal is divided into amplitude, the identical two paths of signals of phase place through power splitter, wherein through the signal of 90 ° of phase shifter branch roads one, is loaded on the grid of GaAs MESFET simultaneously through the MEMS clamped beam with the signal of branch road two; Thereby the size of the saturation current between the Controlling Source drain electrode finally realizes the detection of microwave signal frequency.
The structure that satisfies above condition promptly is regarded as the frequency detector based on the GaAs based clamped beam of micromechanics of the present invention.
The above is merely preferred embodiments of the present invention; Protection scope of the present invention is not exceeded with above-mentioned embodiment; As long as the equivalence that those of ordinary skills do according to disclosed content is modified or changed, all should include in the protection domain of putting down in writing in claims.
Claims (2)
1. frequency detector based on the GaAs based clamped beam of micromechanics, it is characterized in that: this frequency detector comprises
Power divider (PD), 90-degree phase shifter (PS), low-pass filter (F) and gallium arsenide metal semiconductor field effect transis,
Power divider; Be used for receiving and treat the side microwave signal; And this is treated that the side microwave signal is divided into amplitude, two tributary signals that phase place is identical, i.e. the first via microwave signal and the second tunnel microwave signal, and export to gallium arsenide metal semiconductor field effect transis and 90-degree phase shifter respectively;
90-degree phase shifter is used to receive said the second tunnel microwave signal, with this signal produce one with phase shift that frequency is directly proportional after, output Third Road microwave signal is to the gallium arsenide metal semiconductor field effect transis;
Low-pass filter is used for linking to each other with the gallium arsenide metal semiconductor field effect transis through capacitance, and the high-frequency signal of its output of elimination obtains the current signal with frequency dependence;
The gallium arsenide metal semiconductor field effect transis is used to realize the measurement of frequency; Wherein,
The gallium arsenide metal semiconductor field effect transis comprises gallium arsenide substrate (1); Be grown in lip-deep source electrode (2) and the drain electrode (3) that is used to export saturation current of gallium arsenide substrate (1); Source electrode (2) is oppositely arranged with drain electrode (3), is respectively equipped with the first clamped beam anchor district (71), the second clamped beam anchor district (72) in the outside of source electrode (2) and drain electrode (3); Be arranged on grid (4) between source electrode (2) and the drain electrode (3); Be arranged in this grid (4) top and the clamped beam (6) relative with grid (4), the both sides of clamped beam (6) respectively with the first clamped beam anchor district (71), the second clamped beam anchor district (72) links to each other;
Between the grid (4) and the first fixed beam anchor district (71), be provided with first pull-down electrode (81); Between the grid (5) and the second fixed beam anchor district (72), be provided with second pull-down electrode (82), first pull-down electrode (81) and second pull-down electrode (82) are insulated dielectric layer (9) respectively and cover;
Source electrode (2) ground connection, drain electrode (3) connects positive voltage; Be communicated with through N type raceway groove (5) between source electrode (2) and the drain electrode (3), direction of current by drain electrode (3) to source electrode (2); Source electrode (2) and drain electrode (3) form ohmic contact regions by gold and N type heavily doped region and constitute;
Grid (4) is made up of the Schottky contact region that gold and N type thin layer form, and grid (4) connects negative voltage, and it is used to adjust the width of N type raceway groove (5) depletion layer, changes the size of the saturation current between source electrode (2) drain electrode (3);
The first via microwave signal of power divider output is exported to the first clamped beam anchor district (71);
The Third Road microwave signal of 90-degree phase shifter is exported to the second clamped beam anchor district (72) of gallium arsenide metal semiconductor field effect transis.
2. the frequency detecting method of the frequency detector based on the GaAs based clamped beam of micromechanics as claimed in claim 1 is characterized in that this method comprises the steps:
Source electrode (2) and drain electrode (3) are used to export saturation current, form ohmic contact regions by gold and N type heavily doped region and constitute; Under the normal working condition of gallium arsenide metal semiconductor field effect transis; Source electrode (2) ground connection; Drain electrode (3) connects positive voltage, and the electronics in the N type raceway groove will flow to drain electrode (3) from source electrode (2), direction of current by drain electrode (3) to source electrode (2); Grid (4) is made up of the Schottky contact region that gold and N type thin layer form, and connects negative voltage;
Microwave signal to be measured is divided into amplitude, identical two tributary signals of phase place through power divider (PD); One road signal is connected to the first clamped beam anchor district (71), and another road signal is through being connected to the second clamped beam anchor district (72) after one the 90 degree linear phase shifter; When not having direct current biasing on first pull-down electrode (81) and second pull-down electrode (82), clamped beam (6) is positioned at the top of grid (4), and the gallium arsenide metal semiconductor field effect transis is in non-frequency detecting state;
When at first pull-down electrode (81) and second pull-down electrode (82) loading direct current biasing; Clamped beam (6) by drop-down and with grid (4) when contacting; Two way microwave signals is loaded on the grid (4) simultaneously, thereby changes the saturation current size between source electrode (2) drain electrode (3); After electric capacity and wave filter, detect the final measurement that realizes frequency of size of source electrode (2) drain electrode (3) saturation current.
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