CN102735926B - Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method - Google Patents
Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method Download PDFInfo
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- CN102735926B CN102735926B CN201210204654.7A CN201210204654A CN102735926B CN 102735926 B CN102735926 B CN 102735926B CN 201210204654 A CN201210204654 A CN 201210204654A CN 102735926 B CN102735926 B CN 102735926B
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Abstract
The invention discloses a frequency detector based on a micro-mechanical gallium arsenide-based clamped beam and a detection method. The frequency detector comprises a power divider (PD), a 90-DEG phase shifter (PS), a low-pass filter (F) and a gallium arsenide metal-oxide-semiconductor field effect transistor, wherein the power divider is used for receiving a microwave signal to be detected, dividing the microwave signal to be detected into two branch signals with the same amplitude and phase, namely a first path of microwave signal and a second path of microwave signal, and respectively outputting the two paths of microwave signal to the gallium arsenide metal-oxide-semiconductor field effect transistor and the 90-DEG phase shifter. The method comprises the following steps of: when direct current offset is loaded to a first pull-down electrode (81) and a second pull-down electrode (82), and a cantilever beam (6) is pulled down and contacted with a gate (4), simultaneously loading the two paths of microwave signals to the gate (4); and through a capacitor and a filter, detecting the size of the saturation current of a source (2) and a drain (3), so frequency measurement is realized. The invention has the advantage of simple structure.
Description
Technical field
The present invention proposes frequency detector and preparation method based on the GaAs based clamped beam of micromechanics, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
Microwave frequency is the very important parameter of microwave.Microwave signal frequency detection system has application extremely widely at aspects such as radar, wireless telecommunications.Existing microwave frequency detection technique is mainly that they have high precision and wide band advantage based on principles such as process of heterodyning, counting method and resonance methods, however its maximum shortcoming be need to be more accurate surveying instrument.Along with scientific and technical development, modern PCS Personal Communications System requires microwave frequency detector to have simple structure, little volume and little DC power.In recent years, along with the fast development of MEMS technology, and MEMS fixed beam structure is conducted in-depth research, make the microwave frequency detector of realizing above-mentioned functions based on the GaAs based clamped beam of micromechanics become possibility.
Summary of the invention
technical matters:the object of this invention is to provide a kind of frequency detector and detection method based on the GaAs based clamped beam of micromechanics, by pull-down electrode, control MEMS clamped beam, make two branch road frequencies identical but exist the microwave signal of certain phase differential to be loaded on the grid of GaAs MESFET (metal semiconductor field effect transis) simultaneously, by detection resources drain saturation current, extrapolate the frequency of microwave signal to be measured.
technical scheme:for solving the problems of the technologies described above, the invention provides a kind of frequency detector based on the GaAs based clamped beam of micromechanics, this frequency detector comprises
Power divider, 90-degree phase shifter, low-pass filter and gallium arsenide metal semiconductor field effect transis,
Power divider, for receiving, treat side microwave signal, and this is treated to side microwave signal is divided into amplitude, two tributary signals that phase place is identical, i.e. first via microwave signal and the second tunnel microwave signal, and export to respectively gallium arsenide metal semiconductor field effect transis and 90-degree phase shifter;
90-degree phase shifter, for receiving described the second tunnel microwave signal, produces this signal after a phase shift being directly proportional to frequency, and output Third Road microwave signal is to gallium arsenide metal semiconductor field effect transis;
Low-pass filter, for being connected with gallium arsenide metal semiconductor field effect transis by capacitance, the high-frequency signal of its output of elimination, obtains the current signal with frequency dependence;
Gallium arsenide metal semiconductor field effect transis, for realizing the measurement of frequency; Wherein,
Gallium arsenide metal semiconductor field effect transis comprises gallium arsenide substrate, be grown in the lip-deep source electrode for output saturation electric current of gallium arsenide substrate and drain electrode, source electrode and drain electrode are oppositely arranged, in the outside of source electrode and drain electrode, be respectively equipped with the first clamped beam anchor district, the second clamped beam anchor district, is arranged on grid between source electrode and drain electrode, is arranged on above this grid and the clamped beam relative with grid, the both sides of clamped beam respectively with the first clamped beam anchor district, the second clamped beam anchor district is connected;
Between grid and the first fixed beam anchor district, be provided with the first pull-down electrode, between grid and the second fixed beam anchor district, be provided with the second pull-down electrode, the first pull-down electrode and the second pull-down electrode are insulated respectively dielectric layer and cover;
Source ground, drain electrode connects positive voltage; Between source electrode and drain electrode, by N-type raceway groove, be communicated with, direction of current is by drain-to-source; Source electrode and drain electrode form ohmic contact regions by gold and N-type heavily doped region and form;
The Schottky contact region that grid is formed by gold and N-type thin layer forms, and grid connects negative voltage, and it changes the size of the saturation current between source drain for adjusting the width of N-type raceway groove depletion layer;
The first via microwave signal of power divider output is exported to the first clamped beam anchor district;
The Third Road microwave signal of 90-degree phase shifter is exported to the second clamped beam anchor district of gallium arsenide metal semiconductor field effect transis.
The present invention also provides a kind of frequency detecting method based on the GaAs based clamped beam of micromechanics, and the method comprises the steps:
Source electrode and drain electrode, for output saturation electric current, form ohmic contact regions by gold and N-type heavily doped region and form; Under gallium arsenide metal semiconductor field effect transis normal operation, source ground, drain electrode connects positive voltage, electronics in N-type raceway groove will flow to drain electrode from source electrode, direction of current is by drain-to-source, and the Schottky contact region that grid is formed by gold and N-type thin layer forms, and connects negative voltage;
Microwave signal to be measured is divided into amplitude, identical two tributary signals of phase place through power divider, and a road signal is connected to the first clamped beam anchor district, and another road signal is through being connected to the second clamped beam anchor district after one 90 degree linear phase shifter; While there is no direct current biasing in the first pull-down electrode and the second pull-down electrode, clamped beam is positioned at the top of grid, and gallium arsenide metal semiconductor field effect transis is in non-frequency detecting state;
When the first pull-down electrode and the second pull-down electrode load direct current biasing, clamped beam is by drop-down and during with gate contact, two way microwave signals is loaded on grid, thereby changes the saturation current size between source drain simultaneously; After an electric capacity and wave filter, the size that detects source electrode drain saturation current finally realizes the measurement of frequency.
beneficial effect:it is little, simple in structure that frequency detector based on the GaAs based clamped beam of micromechanics of the present invention not only has volume, is easy to the advantage measured, and has low DC power, be easy to integrated and with the advantage of GaAs monolithic integrated microwave circuit compatibility.
Accompanying drawing explanation
Fig. 1 is the vertical view of the frequency detector based on the GaAs based clamped beam of micromechanics;
Fig. 2 is the A-A sectional view of the frequency detector based on the GaAs based clamped beam of micromechanics;
Fig. 3 is the B-B sectional view of the frequency detector based on the GaAs based clamped beam of micromechanics;
Figure comprises: GaAs substrate 1, source electrode 2, drain electrode 3, grid 4, N-type raceway groove
5, MEMS clamped beam 6, MEMS clamped beam Mao district 7, the pull-down electrode 8 of MEMS clamped beam, silicon nitride medium layer 9, connecting line 10, direct current biasing press welding block 11, the first microwave input press welding block 12, the second microwave input press welding blocks 13.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described.
Referring to Fig. 1-3, the frequency detector based on the GaAs based clamped beam of micromechanics provided by the invention, frequency detector comprises
Power divider PD, 90-degree phase shifter PS, low-pass filter F and gallium arsenide metal semiconductor field effect transis,
Power divider, for receiving, treat side microwave signal, and this is treated to side microwave signal is divided into amplitude, two tributary signals that phase place is identical, i.e. first via microwave signal and the second tunnel microwave signal, and export to respectively gallium arsenide metal semiconductor field effect transis and 90-degree phase shifter;
90-degree phase shifter, for receiving described the second tunnel microwave signal, produces this signal after a phase shift being directly proportional to frequency, and output Third Road microwave signal is to gallium arsenide metal semiconductor field effect transis;
Low-pass filter, for being connected with gallium arsenide metal semiconductor field effect transis by capacitance, the high-frequency signal of its output of elimination, obtains the current signal with frequency dependence;
Gallium arsenide metal semiconductor field effect transis, for realizing the measurement of frequency; Wherein,
Gallium arsenide metal semiconductor field effect transis comprises gallium arsenide substrate 1, be grown in the lip-deep source electrode 2 for output saturation electric current of gallium arsenide substrate 1 and drain electrode 3, source electrode 2 is oppositely arranged with drain electrode 3, outside in source electrode 2 and drain electrode 3 is respectively equipped with the first clamped beam anchor district 71, the second clamped beam anchor district 72, be arranged on grid 4 between source electrode 2 and drain electrode 3, be arranged on above this grid 4 and the clamped beam 6 relative with grid 4, the both sides of clamped beam 6 are connected with 71, the second clamped beam anchor districts 72, the first clamped beam anchor district respectively;
Between grid 4 and the first fixed beam anchor district 71, be provided with the first pull-down electrode 81, between grid 5 and the second fixed beam anchor district 72, be provided with the second pull-down electrode 82, the first pull-down electrode 81 and the second pull-down electrode 82 and be insulated respectively dielectric layer 9 coverings;
Source electrode 2 ground connection, drain electrode 3 connects positive voltage; Between source electrode 2 and drain electrode 3, by N-type raceway groove 5, be communicated with, direction of current is by draining 3 to source electrode 2; Source electrode 2 and drain electrode 3 form ohmic contact regions by gold and N-type heavily doped region and form;
The Schottky contact region that grid 4 is formed by gold and N-type thin layer forms, and grid 4 connects negative voltage, and it changes the size of the saturation current between source electrode 2 drain electrodes 3 for adjusting the width of N-type raceway groove 5 depletion layers;
The first via microwave signal of power divider output is exported to the first clamped beam anchor district 71;
The Third Road microwave signal of 90-degree phase shifter is exported to the second clamped beam anchor district 72 of gallium arsenide metal semiconductor field effect transis.
The present invention also provides a kind of frequency detecting method based on the GaAs based clamped beam of micromechanics, and the method comprises the steps:
Source electrode 2 and drain electrode 3, for output saturation electric current, form ohmic contact regions by gold and N-type heavily doped region and form; Under gallium arsenide metal semiconductor field effect transis normal operation, source electrode 2 ground connection, drain electrode 3 connects positive voltage, electronics in N-type raceway groove will flow to drain electrode 3 from source electrode 2, direction of current is by draining 3 to source electrode 2, and the Schottky contact region that grid 4 is formed by gold and N-type thin layer forms, and connects negative voltage;
Microwave signal to be measured is divided into amplitude, identical two tributary signals of phase place through power divider PD, and a road signal is connected to the first clamped beam anchor district 71, and another road signal is through being connected to the second clamped beam anchor district 72 after one 90 degree linear phase shifter; While there is no direct current biasing in the first pull-down electrode 81 and the second pull-down electrode 82, clamped beam 6 is positioned at the top of grid 4, and gallium arsenide metal semiconductor field effect transis is in non-frequency detecting state;
When the first pull-down electrode 81 and the second pull-down electrode 82 load direct current biasing, clamped beam 6 is by drop-down and while contact with grid 4, two way microwave signals is loaded on grid 4 simultaneously, thereby the saturation current changing between source electrode 2 drain electrodes 3 is big or small; After an electric capacity and wave filter, the size that detects source electrode 2 drain electrode 3 saturation currents finally realizes the measurement of frequency.
Frequency detector based on the GaAs based clamped beam of micromechanics of the present invention mainly comprises MESFET and two parts of MEMS fixed beam structure.Wherein, MESFET comprises source electrode, drain electrode, grid, N-type raceway groove; MEMS fixed beam structure comprises MEMS clamped beam, Liang Mao district, pull-down electrode and dielectric layer.This structure be take GaAs substrate:
For detection of big or small source electrode and the drain electrode of saturation current, by gold and N-type heavily doped region, form ohmic contact regions and form.Under GaAs MESFET normal operation, source ground, drain electrode connects positive voltage, N-type raceway groove
In electronics will flow to drain electrode from source electrode, direction of current is by drain-to-source.
The Schottky contact region that grid is formed by gold and N-type thin layer forms, and grid connects negative voltage.The effect of negative polarity grid is the width of adjusting raceway groove depletion layer, changes the size of the saturation current between source-drain electrode.
This frequency detector has a MEMS fixed beam structure, and it is across on grid, two pull-down electrode be positioned at clamped beam below, and be distributed in the both sides of grid, the medium silicon nitride of insulation covers in pull-down electrode.Microwave signal to be measured is divided into identical two tributary signals of phase and magnitude through power splitter, is connected respectively on corresponding press welding block.While there is no direct current biasing in two pull-down electrode, MEMS clamped beam is positioned at up state, and the saturation current between GaAs MESFET source-drain electrode is constant; When load direct current biasing in two pull-down electrode, MEMS clamped beam is drop-down when the gate contact, the signal of branch road one is through after the phase shifter of 90 °, be loaded on the grid of GaAs MESFET by MEMS clamped beam with the signal of branch road two simultaneously, thereby change the saturation current size between source-drain electrode.Therefore,, after an electric capacity and wave filter, the size of detection resources drain saturation current finally can realize the measurement of microwave signal frequency.
The specific embodiments of the frequency detector based on the GaAs based clamped beam of micromechanics of invention is as follows herein:
On GaAs substrate 1, be provided with source electrode 2, drain electrode 3, grid 4, N-type raceway groove 5, MEMS clamped beam anchor district 7 and pull-down electrode 8.
Source electrode 2 and drain electrode 3 sizes for detection of saturation current, form ohmic contact regions by gold and N-type heavily doped region and form.Under GaAs MESFET normal operation, source electrode 2 ground connection, drain electrode 3 connects positive voltage, and the electronics in N-type raceway groove will flow to drain electrode 3 from source electrode 2, and direction of current is by draining 3 to source electrode 2.
The Schottky contact region that grid 4 is formed by gold and N-type thin layer forms, and grid 4 connects negative voltage.The effect of negative polarity grid 4 is width of adjusting raceway groove 5 depletion layers, changes the size of the saturation current between source electrode 2 drain electrodes 3.
This frequency detector has a MEMS fixed beam structure 6, and it is across on grid 4, two pull-down electrode 8 be positioned at clamped beam 6 below, be distributed in the both sides of grid 4, the medium silicon nitride 9 of insulation covers in pull-down electrode 8.Microwave signal to be measured is divided into two amplitudes, identical two tributary signals of phase place through power splitter, is connected respectively on corresponding press welding block 12,13.While there is no direct current biasing in two pull-down electrode, MEMS clamped beam 6 is positioned at up state, and the saturation current between GaAs MESFET source-drain electrode is constant; When loading direct current biasing by MEMS clamped beam 6 is drop-down while contacting with grid 4 in two pull-down electrode 8, the signal of branch road one is through be loaded on the grid 4 of GaAs MESFET by MEMS clamped beam 6 with the signal of branch road two after the phase shifter of 90 ° simultaneously, thereby the saturation current changing between source electrode 2 drain electrodes 3 is big or small.Therefore,, after an electric capacity and wave filter, the size that detects source electrode 2 drain electrode 3 saturation currents finally realizes the measurement of two supported signal frequencies.
The preparation method of the frequency detector based on the GaAs based clamped beam of micromechanics is:
1) prepare Semi-insulating GaAs substrate;
2) inject N-type impurity, on GaAs surface, form N-type thin layer;
3) photoetching grid region, removes grid region photoresist in addition;
4) electron beam evaporation titanium/platinum/gold;
5) peel off area of grid titanium/platinum/gold in addition;
6) titanium/platinum of heating evaporation/gold forms Schottky barrier district, forms grid;
7) in the region that need to form source electrode and drain electrode, inject heavy doping N-type impurity, form N-type heavily doped region;
8) short annealing of N-type heavily doped region is processed;
9) photoetching source electrode and drain electrode, remove source electrode and drain electrode photoresist in addition;
10) vacuum evaporation gold germanium nickel/gold;
11) peel off source class and leak level region gold germanium nickel/gold in addition;
12) alloying forms Ohmic contact, forms source electrode and drain electrode;
13) photoetching: removal will retain the photoresist in pulling electrode, MEMS clamped beam Mao district, press welding block and connecting line place;
14) evaporation ground floor gold, its thickness is 0.3
μ m;
15) peel off pull-down electrode 8, semi-girder anchor district 7, press welding block and connecting line gold in addition, form pull-down electrode, MEMS clamped beam Mao district, press welding block and connecting line;
16) deposit photoetching polyimide sacrificial layer: on GaAs substrate, apply 1.6
μ mthick polyimide sacrificial layer, requires to fill up pit, and the thickness of polyimide sacrificial layer has determined MEMS clamped beam and its below distance between silicon nitride medium layer in pull-down electrode; Photoetching polyimide sacrificial layer, only retains the sacrifice layer of clamped beam below;
17) evaporation titanium/gold/titanium, its thickness is 500/1500/300: the down payment of evaporation for electroplating;
18) photoetching: removal will be electroplated local photoresist;
19) electrogilding, its thickness is 2
μ m;
20) remove photoresist: remove and do not need to electroplate local photoresist;
21) anti-carve titanium/gold/titanium, corrosion down payment, forms MEMS clamped beam;
22) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dehydration, volatilizees under normal temperature, dries.
Distinguish that to be whether the standard of this structure as follows:
Frequency detector based on the GaAs based clamped beam of micromechanics proposed by the invention has MEMS clamped beam across above the grid of MESFET, two pull-down electrode below MEMS clamped beam, have been designed, when loading direct current biasing in pull-down electrode, MEMS clamped beam is by drop-down, intermediate portion contacts with grid, measured signal is divided into amplitude through power splitter, the identical two paths of signals of phase place, wherein through the signal of 90 ° of phase shifter branch roads one, by MEMS clamped beam, be loaded on the grid of GaAs MESFET with the signal of branch road two simultaneously, thereby the size of the saturation current between control source-drain electrode, finally realize the detection of microwave signal frequency.
The structure that meets above condition is considered as the frequency detector based on the GaAs based clamped beam of micromechanics of the present invention.
The foregoing is only better embodiment of the present invention; protection scope of the present invention is not limited with above-mentioned embodiment; in every case the equivalence that those of ordinary skills do according to disclosed content is modified or is changed, and all should include in the protection domain of recording in claims.
Claims (2)
1. the frequency detector based on the GaAs based clamped beam of micromechanics, is characterized in that: this frequency detector comprises
Power divider (PD), 90-degree phase shifter (PS), low-pass filter (F) and gallium arsenide metal semiconductor field effect transis,
Power divider, be used for receiving microwave signal to be measured, and this microwave signal to be measured is divided into amplitude, two tributary signals that phase place is identical, i.e. first via microwave signal and the second tunnel microwave signal, and export to respectively gallium arsenide metal semiconductor field effect transis and 90-degree phase shifter;
90-degree phase shifter, for receiving described the second tunnel microwave signal, produces this signal after a phase shift being directly proportional to frequency, and output Third Road microwave signal is to gallium arsenide metal semiconductor field effect transis;
Low-pass filter, for being connected with gallium arsenide metal semiconductor field effect transis by capacitance, the high-frequency signal of its output of elimination, obtains the current signal with frequency dependence;
Gallium arsenide metal semiconductor field effect transis, for realizing the measurement of frequency; Wherein,
Gallium arsenide metal semiconductor field effect transis comprises gallium arsenide substrate (1), be grown in the lip-deep source electrode for output saturation electric current of gallium arsenide substrate (1) (2) and drain electrode (3), source electrode (2) is oppositely arranged with drain electrode (3), outside in source electrode (2) and drain electrode (3) is respectively equipped with the first clamped beam anchor district (71), the second clamped beam anchor district (72), be arranged on the grid (4) between source electrode (2) and drain electrode (3), be arranged on this grid (4) top and the clamped beam (6) relative with grid (4), the both sides of clamped beam (6) respectively with the first clamped beam anchor district (71), the second clamped beam anchor district (72) is connected,
Between grid (4) and the first fixed beam anchor district (71), be provided with the first pull-down electrode (81), between grid (5) and the second fixed beam anchor district (72), be provided with the second pull-down electrode (82), the first pull-down electrode (81) and the second pull-down electrode (82) are nitrided respectively silicon dielectric layer (9) and cover;
Source electrode (2) ground connection, drain electrode (3) connects positive voltage; Between source electrode (2) and drain electrode (3), by N-type raceway groove (5), be communicated with, direction of current by drain (3) to source electrode (2); Source electrode (2) and drain electrode (3) form ohmic contact regions by gold and N-type heavily doped region and form;
The Schottky contact region that grid (4) is formed by gold and N-type thin layer forms, and grid (4) connects negative voltage, and it changes the size of the saturation current between source electrode (2) drain electrode (3) for adjusting the width of N-type raceway groove (5) depletion layer;
The first via microwave signal of power divider output is exported to the first clamped beam anchor district (71);
The Third Road microwave signal of 90-degree phase shifter is exported to the second clamped beam anchor district (72) of gallium arsenide metal semiconductor field effect transis.
2. a frequency detecting method for the frequency detector based on the GaAs based clamped beam of micromechanics as claimed in claim 1, is characterized in that, the method comprises the steps:
Source electrode (2) and drain electrode (3), for output saturation electric current, form ohmic contact regions by gold and N-type heavily doped region and form; Under gallium arsenide metal semiconductor field effect transis normal operation, source electrode (2) ground connection, drain electrode (3) connects positive voltage, electronics in N-type raceway groove will flow to drain electrode (3) from source electrode (2), direction of current by drain (3) to source electrode (2), the Schottky contact region that grid (4) is formed by gold and N-type thin layer forms, and connects negative voltage;
Microwave signal to be measured is divided into amplitude, identical two tributary signals of phase place through power divider (PD), one road signal is connected to the first clamped beam anchor district (71), and another road signal is through being connected to the second clamped beam anchor district (72) after one 90 degree linear phase shifter; While there is no direct current biasing in the first pull-down electrode (81) and the second pull-down electrode (82), clamped beam (6) is positioned at the top of grid (4), and gallium arsenide metal semiconductor field effect transis is in non-frequency detecting state;
When at the first pull-down electrode (81) and the second pull-down electrode (82) loading direct current biasing, clamped beam (6) is by drop-down and while contacting with grid (4), it is upper that two way microwave signals is loaded into grid (4) simultaneously, thereby change the saturation current size between source electrode (2) drain electrode (3); After an electric capacity and wave filter, the size that detects source electrode (2) drain electrode (3) saturation current finally realizes the measurement of frequency.
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105531B (en) * | 2013-01-18 | 2015-09-30 | 东南大学 | The online microwave frequency detector of microelectron-mechanical and detection method thereof |
| CN105099374B (en) * | 2015-07-01 | 2017-12-05 | 东南大学 | Gallium nitride base low-leakage current cantilever switch difference amplifier |
| CN105162420B (en) * | 2015-07-01 | 2017-11-28 | 东南大学 | GaAs base low-leakage current double cantilever beam switchs double grid frequency multiplier |
| CN105044452B (en) * | 2015-07-01 | 2017-10-10 | 东南大学 | Based on GaAs base low-leakage current double cantilever beam switching frequency detectors |
| CN104935328B (en) * | 2015-07-01 | 2017-06-30 | 东南大学 | The double clamped beams of silicon substrate low-leakage current can moving grid frequency divider |
| CN105024648B (en) * | 2015-07-01 | 2017-11-28 | 东南大学 | Silicon substrate low-leakage current cantilever beam field effect transistor mixer |
| CN104950170B (en) * | 2015-07-01 | 2017-10-10 | 东南大学 | Based on the double clamped beam switching frequency detectors of GaAs bases low-leakage current |
| CN104950172B (en) * | 2015-07-01 | 2017-11-17 | 东南大学 | Double clamped beams switch GaAs base low-leakage current microwave phase detector device |
| CN104935255B (en) * | 2015-07-01 | 2017-12-05 | 东南大学 | Silicon substrate low-leakage current double cantilever beam can moving grid frequency multiplier |
| CN105049032B (en) * | 2015-07-01 | 2017-11-28 | 东南大学 | Gallium nitride base low-leakage current cantilever switch field-effect transistor nor gate |
| CN105024649B (en) * | 2015-07-01 | 2017-12-19 | 东南大学 | Silicon substrate low-leakage current cantilever beam gate metal oxide field-effect transistor nor gate |
| CN105116222B (en) * | 2015-07-01 | 2017-12-05 | 东南大学 | Double cantilever beam switchs GaAs base low-leakage current microwave phase detector device |
| CN109975327B (en) * | 2019-04-04 | 2021-05-25 | 王琮 | Microwave respiration sensor for early diagnosis of lung cancer and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101059541A (en) * | 2007-05-18 | 2007-10-24 | 东南大学 | Microelectronic machinery microwave frequency detector and its preparation method |
| CN101387664A (en) * | 2008-10-17 | 2009-03-18 | 东南大学 | Microelectronic machinery microwave frequency detector and method for making same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110210801A1 (en) * | 2010-02-26 | 2011-09-01 | Imec | Temperature measurement system comprising a resonant mems device |
| US8624679B2 (en) * | 2010-04-14 | 2014-01-07 | Analog Devices, Inc. | Method and apparatus for MEMS phase locked loop |
-
2012
- 2012-06-20 CN CN201210204654.7A patent/CN102735926B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101059541A (en) * | 2007-05-18 | 2007-10-24 | 东南大学 | Microelectronic machinery microwave frequency detector and its preparation method |
| CN101387664A (en) * | 2008-10-17 | 2009-03-18 | 东南大学 | Microelectronic machinery microwave frequency detector and method for making same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
Non-Patent Citations (8)
| Title |
|---|
| A Micromachined Inline-Type Wideband Microwave Power Sensor Based on GaAs MMIC Technology;Lei Han 等;《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》;20090630;第18卷(第3期);第705-714页 * |
| HIKMET SARI 等.New Phase and frequency Detectors for Carrier Recovery in RSK and QAM Systems.《IEEE TRANSACTIONS ON COMMUNICATIONS》.1988,第36卷(第9期),第1035-1043页. |
| Lei Han 等.A Micromachined Inline-Type Wideband Microwave Power Sensor Based on GaAs MMIC Technology.《JOURNAL OF MICROELECTROMECHANICAL SYSTEMS》.2009,第18卷(第3期),第705-714页. |
| Microwave frequency detector at X-band using GaAs MMIC technology;Zhang Jun 等;《Journal of Semiconductors》;20090430;第30卷(第4期);全文 * |
| New Phase and frequency Detectors for Carrier Recovery in RSK and QAM Systems;HIKMET SARI 等;《IEEE TRANSACTIONS ON COMMUNICATIONS》;19880930;第36卷(第9期);第1035-1043页 * |
| Zhang Jun 等.Microwave frequency detector at X-band using GaAs MMIC technology.《Journal of Semiconductors》.2009,第30卷(第4期),全文. |
| 张九才.提高微波频率测量精度的方法.《中国测试技术》.2006,第32卷(第2期),第1-4页. |
| 提高微波频率测量精度的方法;张九才;《中国测试技术》;20060331;第32卷(第2期);第1-4页 * |
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