CN105004919B - Based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector - Google Patents
Based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector Download PDFInfo
- Publication number
- CN105004919B CN105004919B CN201510378150.0A CN201510378150A CN105004919B CN 105004919 B CN105004919 B CN 105004919B CN 201510378150 A CN201510378150 A CN 201510378150A CN 105004919 B CN105004919 B CN 105004919B
- Authority
- CN
- China
- Prior art keywords
- mosfet
- delay line
- signal
- clamped
- clamped beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The frequency detector based on the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current of the present invention, by capacitance, the delay line of λ/100, the delay line of λ/4, high frequency choke coil, switch, low pass filter, double clamped beams can the N-type MOSFET of moving grid structure form.Movable grid of double clamped beams as MOSFET, significantly reduces power consumption.During frequency detecting, all in pull-down state, the two paths of signals that certain phase difference is produced by delay line is input on MOSFET two clamped beam grids two clamped beams, detects source-drain electrode saturation current, the frequency of microwave signal to be measured is obtained by phase difference.During signal magnifying state, the clamped beam of the connection delay line of λ/100 be in pull-down state, and λ/4 delay line ends are short-circuit, and top is output to clamped beam by another way completely equivalent to open circuit, microwave signal to be measured, and circuit is in signal magnifying state.Due to there is high resistance region, increasing MOSFET breakdown reverse voltage below the clamped beam of suspension.
Description
Technical field
The present invention proposes a kind of based on the movable gate MOSFET (metal-oxide semiconductor (MOS) of the double clamped beams of silicon substrate low-leakage current
Field-effect transistor) frequency detector, belong to microelectromechanical systems (MEMS) technical field.
Background technology
One of the three big basic parameters of frequency as microwave signal, it is detected in microwave communication, radar monitoring, airmanship
Very important role is play Deng field.Existing microwave frequency detection method can be divided into counting method, photon method, the resonance method
And vector synthesis.Wherein vector synthesis belongs to passive method, have bandwidth, it is simple in construction, easily realized by MEMS technology
The features such as, there is greater advantage with respect to other method.
With the continuous improvement of circuit level, the continuous diminution of chip size, power problemses become increasingly notable.It is too high
Power consumption can make the temperature overheating of chip, the performance that can not only influence circuit also results in the reliability of circuit and reduced, and uses the longevity
Life shortens.Therefore, consider that power problemses are extremely necessary in the design of microwave frequency detector.The present invention is to be based on
A kind of non-detection status of SiCOMS (complementary metal oxide semiconductor) techniques and MEMS surface micromachined technological designs
The movable gate MOSFET of the double clamped beams of the extremely low low-leakage current of leakage current, realizes frequency detecting on this basis.
The content of the invention
Technical problem:It is an object of the invention to provide one kind based on the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current
Frequency detector, double clamped beams as MOSFET can moving grid, by apply DC offset voltage realize to clamped beam state
Control, by changing the state of beam and the design of the delay line of λ/4, circuit can realize that frequency detecting and signal amplify two kinds of work(
Can, the area of chip has been saved, has reduced cost；When MOSFET is in off working state, because clamped beam is in suspended state,
Grid leakage current is minimum, reduces quiescent dissipation.
Technical scheme：Can based on the double clamped beams of silicon substrate low-leakage current in order to solve the above technical problems, present invention offer is a kind of
Moving grid MOSFET frequency detector, MOSFET are produced in P-type silicon substrate, and raceway groove gate oxide is arranged in P-type silicon substrate,
Be provided with two clamped beams in the top of raceway groove gate oxide, material Au, as MOSFET can moving grid, its actuation voltage sets
For MOSFET threshold voltage, across in anchor area, anchor area is connected clamped beam with input lead, inclined as microwave signal and direct current
The input of confidence number, wherein, microwave signal is inputted by microwave signal input port, by being divided into two-way after capacitance, point
Not through λ/delay line of 100 delay line and λ/4 is input on two clamped beams, DC bias signal is by the first offset port and second
Offset port inputs, and is separately input to by high frequency choke coil on two clamped beams, the material for preparing of anchor area and input lead is
Polysilicon, is respectively dispersed with a pull-down electrode below clamped beam, pull-down electrode ground connection, one layer of insulation of covering in pull-down electrode
Silicon nitride medium layer；MOSFET source regions, MOSFET drain regions are separately positioned in P-type silicon substrate, and source and drain lead is respectively by active
Area's fairlead and MOSFET source regions, the connection of MOSFET drain regions.
The frequency detector by apply DC offset voltage and the control delay line of λ/4 whether be grounded realize frequency detecting and
Signal amplifies two kinds of functions；Applying DC offset voltage during frequency detecting makes two clamped beams treat micrometer all in pull-down state
It is equal but the signal of certain phase difference be present that ripple signal produces two-way frequency after the delay line of the delay line of λ/4 and λ/100, inputs
Clamped beam to MOSFET can realize that signal is mixed, the source-drain electrode saturation current of output contains phase on moving grid through MOSFET
The current component of information, the high fdrequency component in source-drain electrode saturation current is filtered off by low pass filter, by phase-detection output end
Mouth output, so as to obtain the phase difference of two paths of signals, finally by the anti-frequency for releasing microwave signal to be measured of phase difference；At circuit
When signal magnifying state, applying DC offset voltage makes the clamped beam of the delay line of λ/100 connection be in pull-down state, and λ/4 are prolonged
The end ground connection of slow line, equivalent to open circuit, signal passes fully through the delay line of λ/100 and is input to corresponding clamped beam at delay line top
On grid, source-drain electrode exports the current signal after amplification, by signal amplification output port output, because what is suspended in the presence of one consolidates
Strutbeam, below corresponding region be high resistance area, be advantageous to increase breakdown reverse voltage.
During the frequency detector off working state, two clamped beams are not in contact with gate oxide, subtracted all in suspended state
Small grid leakage current, power consumption are effectively reduced.
Beneficial effect：The present invention has advantages below relative to existing frequency detector：
1. the frequency detector principle, simple in construction of the present invention, micro- using existing silicon substrate COMS techniques and MEMS surfaces
Machining is easily achieved；
2. by controlling whether the delay line end of DC offset voltage and λ/4 is grounded, circuit can realize frequency detecting and
Signal amplifies two kinds of functions, is effectively saved the area of chip, reduces cost；
3. the present invention due to being subtracted significantly using fixed beam structure, grid leakage current of the frequency detector in off working state
It is small, so as to reduce power consumption；
4. during signal magnifying state, high resistance region be present below the clamped beam of suspension, reversely hitting for MOSFET is increased
Wear magnitude of voltage.
Brief description of the drawings
Fig. 1 is the top view of the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current of the present invention.
Fig. 2 be the double movable gate MOSFETs of clamped beam of silicon substrate low-leakage current of the present invention P-P ' to profile.
Fig. 3 be the double movable gate MOSFETs of clamped beam of silicon substrate low-leakage current of the present invention A-A ' to profile.
Fig. 4 is double raceway grooves of the movable gate MOSFET of clamped beam when two clamped beams are in pull-down state of silicon substrate low-leakage current
Schematic diagram.
Fig. 5 is double raceway grooves of the movable gate MOSFET of clamped beam when a clamped beam is in pull-down state of silicon substrate low-leakage current
Schematic diagram.
Figure includes：P-type Si substrates 1, gate oxide 2, silicon nitride medium layer 3, pull-down electrode 4, input lead 5 are clamped
Liang Mao areas 6, MOSFET source regions 7, MOSFET drain regions 8, clamped beam 9, active area fairlead 10, source and drain lead 11, the first offset side
Mouth 12, the second offset port 13, low pass filter 14, frequency detecting output port 15, signal amplification output port 16.
Embodiment
A kind of frequency detector based on the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current.The frequency detector by every
The delay line of straight electric capacity, λ/100, the delay line of λ/4, high frequency choke coil, switch, low pass filter, double clamped beams can moving grid structures
N-type MOSFET form；N-type MOSFET makes on a silicon substrate, has two clamped beams above raceway groove gate oxide, material is
Au, as MOSFET can moving grid, its actuation voltage is arranged to MOSFET threshold voltage, and clamped beam is across in anchor area, anchor
Area is connected with input lead, as microwave signal and the input of DC bias signal, wherein, microwave signal passes through capacitance
It is input to delay line on clamped beam, DC bias signal is input on clamped beam by high frequency choke coil, and anchor area and input are drawn
The material for preparing of line is polysilicon, and two pull-down electrodes are respectively dispersed with below clamped beam, one layer of insulation is covered in pull-down electrode
Silicon nitride medium layer.
To realize frequency detecting, two direct current biasing ends add certain bias voltage, make two clamped beams all under
Tension state, now MOSFET raceway groove there is inversion layer, MOSFET is on state；Whether control λ/4 delay line ends are grounded
Switch be off, the microwave signal to be measured of input is after capacitance, then after the delay line of λ/4 and λ/100
Generation frequency is equal and the two paths of signals of certain phase difference be present, and the input for being input to MOSFET two clamped beam grids is drawn
On line, realize that signal is mixed through MOSFET, the source-drain electrode saturation current of output contains the current component of phase information, by low
Bandpass filter filters off the high fdrequency component in source-drain electrode saturation current, so as to obtain the phase difference of two paths of signals, finally by phase
The anti-frequency for releasing microwave signal to be measured of difference.
The clamped beam of the delay line of connection λ/100 is set be in pull-down state, control λ/4 when applying certain DC offset voltage
When the switch whether delay line end is grounded is in closure state, circuit can realize signal amplifying function.Due to the delay line of λ/4
End is grounded, and its top passes through without signal equivalent to open circuit, and the microwave signal of input is inputted by the delay line of λ/100 completely
Onto corresponding clamped beam.MOSFET is amplified to input signal, by being exported after capacitance.Due to only have one it is clamped
Beam is in pull-down state, there is high resistance region below the clamped beam that MOSFET suspends in signal magnifying state, improves
MOSFET breakdown reverse voltage.
When two clamped beams all without plus bias voltage and when being in suspended state, silicon substrate MOSFET is in off working state,
Now because clamped beam is in suspended state, grid leakage current is reduced, power consumption is effectively reduced.
The embodiment of the present invention is described further below in conjunction with the accompanying drawings.
Referring to Fig. 1-3, the present invention proposes a kind of frequency based on the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current
Detector.The frequency detector mainly includes：The delay line of capacitance, λ/100, the delay line of λ/4, high frequency choke coil, switch,
Low pass filter 14, double clamped beams can moving grid structure N-type MOSFET.Wherein, capacitance, for isolating microwave signal and straight
Flow signal；The delay line of λ/100, microwave signal signal is set to produce certain phase delay；The delay line of λ/4, make during frequency detecting micro-
Ripple signal produces 90 degree of phase shift, and end is short-circuited when signal amplifies, and is equivalent to top open circuit, microwave signal is prolonged from another way
Slow line input；High frequency choke coil, for isolating microwave signal, avoid influence of the microwave signal to DC signal source；Low pass filtered
Ripple device 14, the radio-frequency component of output signal is filtered off, obtain the current signal with frequency dependence.
Double clamped beams can moving grid structure N-type MOSFET, for realizing the computing of two way microwave signals, output and frequency have
The current signal of pass.P-type Si is selected to realize double clamped beams by COMS techniques and MEMS surface micromachineds as substrate 1
Can moving grid structure N-type MOSFET, MOSFET is enhanced.Clamped beam 9 as MOSFET can moving grid, be produced on MOSFET's
The top of gate oxide 2, material Au, the anchor area 6 at the both ends of clamped beam 9 are connected with input lead 5, and material is polysilicon, drop-down
Voltage is arranged to MOSFET threshold voltage.Respectively there are two pull-down electrodes 4 lower section of clamped beam 9, and pull-down electrode 4 is grounded, drop-down electricity
Covered with dielectric silicon nitride 3 on extremely.
The input lead 5 of clamped beam 9 is as MOSFET microwave signals and the input port of DC bias signal.Capacitance
It is connected with the top of the delay line of λ/100, the delay line of λ/4, the end of delay line is connected with the input lead 5 of clamped beam 9, as microwave
The transmission channel of signal, wherein, the end of the delay line of λ/4 controls the switch whether it is grounded in the presence of one；High frequency choke coil with
The input lead 5 of clamped beam 9 is connected, the input channel as DC bias signal；MOSFET source electrode 7 and pull-down electrode 4 is grounded,
By applying DC offset voltage to the grid of clamped beam 9 in the first offset port 12 and the second offset port 13, can make solid
Strutbeam 9 is in pull-down state, and clamped beam 9 contacts with gate oxide 2, while occurs inversion layer, MOSFET below gate oxide 2
It is on state.Output port of the MOSFET drain electrode 8 as source-drain electrode saturation current, pass through low pass filter during frequency detecting
The current signal relevant with measured signal frequency is exported afterwards, it is corresponding with frequency detecting output port 15；From source and drain when signal amplifies
Microwave signal in the saturation current of pole after extraction amplification, it is corresponding with signal amplification output port 16.
When two offset sides add certain DC offset voltage, make two clamped beams 9 all in pull-down state, MOSFET
Conducting, when the switch whether control λ/4 delay line ends are grounded is off, now circuit is in frequency detecting state,
MOSFET channel is as shown in Figure 4.The microwave signal to be measured of input, produced after the delay line of λ/4 and λ/100 and a phase bit be present
The two paths of signals of difference, is designated as respectively：
Phase difference and the relation of the frequency of microwave signal to be measured can be expressed as：
Two paths of signals is separately input on two clamped beams 9 of MOSFET, by MOSFET mixing, source electrode 7 and drain electrode 8 it
Between saturation current contain the product component of two paths of signals, can be expressed as：
The radio-frequency component of its output signal is filtered off by low pass filter 14, is obtained and phase differenceRelevant direct current point
Amount, so as to draw the phase difference of two paths of signals, further according to phase difference and the relation of microwave signal frequency to be measured, finally draws to be measured
The frequency of microwave signal.
To make circuit be in signal magnifying state, the first offset port 12 apply certain DC offset voltage make connection λ/
The clamped beam 9 of 100 delay lines is in pull-down state, inversion-layer electrons raceway groove occurs below corresponding grid, another clamped beam 9
In suspended state, MOSFET in signal magnifying state below the clamped beam 9 of suspension there is high resistance region, increase
MOSFET breakdown reverse voltage, as shown in figure 5, the switch whether control λ/4 delay line ends are grounded is in closure state.By
In the delay line end of λ/4 ground connection, its top passes through, the microwave signal of input passes through λ/100 completely equivalent to open circuit without signal
Delay line is input on the corresponding grid of clamped beam 9.Now the relation of input and output signal can be expressed as
u′1=Avu1 (4)
MOSFET amplifies output port 16 by signal after being amplified to input signal and exported.
When two clamped beams 9 all without plus bias voltage and when being in suspended state, silicon substrate MOSFET is in off working state,
Now because clamped beam 9 is in suspended state, grid leakage current is reduced, power consumption is effectively reduced.
The double clamped beams of silicon substrate of the present invention can moving grid structure N-type MOSFET preparation methods it is as follows：
1) p-type Si substrates 1 are prepared；
2) bottom oxide growth；
3) depositing silicon nitride and active area photoetching；
4) field aoxidizes；
5) silicon nitride and basal oxygen sheet are removed；
6) gate oxidation is carried out, forms grid oxide layer 2, adjusts threshold voltage, it is enhanced to make N-type MOSFET；
7) depositing polysilicon and photoetching, etches polycrystalline silicon graphicses, clamped beam anchor area 6 and input lead 5 are formed.
8) evaporation growth Al；
9) photoresist is coated, retains the photoresist of the top of pull-down electrode 4；
10) Al is anti-carved, forms pull-down electrode 4；
11) Si of 0.1 μm of epitaxial growth one layerxN1-xInsulating barrier；
12) photoresist is coated, retains the photoresist in pull-down electrode 4；
13) reactive ion etching is utilized, the silicon nitride medium layer 3 formed in pull-down electrode 4；
14) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retains the photoetching on MOSFET channel
Glue；
15) evaporation growth Al；
16) photoresist is coated, retains the photoresist of the position of clamped beam 9；
17) Al is anti-carved, forms the grid of clamped beam 9；
18) phosphorus (P) ion implanting forms N+Source region 7 and drain region 8；
19) source-drain area through hole 10 and lead 11 are made：Photoresist is coated, removes the photoresist of source-drain electrode contact zone, very
Sky evaporation gold germanium ni au, is peeled off, alloying forms Ohmic contact；
20) polyimide sacrificial layer is discharged：Developer solution soaks, and removes the polyimide sacrificial layer under MEMS clamped beams 9, goes
Ionized water soaks slightly, absolute ethyl alcohol dehydration, volatilizees, dries under normal temperature.
Distinguish whether be the structure standard it is as follows：
The frequency detector based on the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current of the present invention, has two movably
Clamped beam as grid, co- controlling N-type MOSFET working condition.There are two pull-down electrodes, drop-down electricity below clamped beam
The silicon nitride medium layer of extremely upper one layer of insulation of covering, controls clamped beam state, it pulls down electricity by applying DC offset voltage
Pressure is dimensioned to MOSFET gate operational voltages.Clamped beam is across in anchor area, and anchor area is connected with input lead, as micro-
The input of ripple signal and DC bias signal, wherein, microwave signal is input to clamped beam grid by capacitance and delay line
On extremely, DC bias signal is input on clamped beam grid by high frequency choke coil.When two clamped beams are in pull-down state, treat
Surveying letter, to produce two-way frequency after the delay line of the delay line of λ/100 and λ/4 equal and the signal of certain phase difference be present, is input to
It is frequency detecting state on clamped beam grid；When the delay line end of λ/4 ground connection, the clamped beam of the delay line connection of λ/100 is in down
Tension state, another clamped beam are in suspended state, are signal magnifying state, and now signal is input to pair by the delay line of λ/100 completely
The clamped beam answered and without the delay line of λ/4, due to high resistance area be present below the clamped beam of suspension, be advantageous to increase MOSFET's
Breakdown reverse voltage.During off working state, for two clamped beams all in suspended state, grid leakage current is extremely low, significantly reduces
Power consumption.
Meet that the structure of conditions above is considered as the frequency of the movable gate MOSFET of the double clamped beams of silicon substrate low-leakage current of the present invention
Rate detector.
Claims (3)
1. it is a kind of based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector, it is characterized in that：MOSFET is produced on p-type
On silicon substrate (1), raceway groove gate oxide (2) is arranged in P-type silicon substrate (1), and two are provided with the top of raceway groove gate oxide (2)
Individual clamped beam (9), material Au, as MOSFET can moving grid, its actuation voltage is arranged to MOSFET threshold voltage, clamped
Beam (9) is across on anchor area (6), and anchor area (6) are connected with input lead (5), as microwave signal to be measured and DC bias signal
Input, wherein, microwave signal to be measured is inputted by microwave signal input port, by being divided into two-way after capacitance, respectively
Through λ/delay line of 100 delay line and λ/4 is input on two clamped beams (9), DC bias signal is by the first offset port (12)
Input with the second offset port (13), be separately input to by high frequency choke coil on two clamped beams (9), it is anchor area (6) and defeated
The material for preparing for entering lead (5) is polysilicon, and a pull-down electrode (4), pull-down electrode are respectively dispersed with below clamped beam (9)
(4) it is grounded, the silicon nitride medium layer (3) of one layer of insulation of covering in pull-down electrode (4)；MOSFET source regions (7), MOSFET drain regions
(8) it is separately positioned in P-type silicon substrate (1), source and drain lead (11) passes through active area fairlead (10) and MOSFET source regions respectively
(7), MOSFET drain regions (8) connect.
2. it is according to claim 1 based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector, it is characterized in that
The frequency detector is by applying whether DC offset voltage and the control delay line of λ/4 are grounded and realize that frequency detecting and signal amplify
Two kinds of functions；Applying DC offset voltage during frequency detecting makes two clamped beams (9) all in pull-down state, microwave signal to be measured
It is equal but the signal of certain phase difference be present that two-way frequency is produced after the delay line of the delay line of λ/4 and λ/100, is input to
MOSFET clamped beam (9) can realize that signal is mixed, the source-drain electrode saturation current of output contains phase on moving grid through MOSFET
The current component of information, the high fdrequency component in source-drain electrode saturation current is filtered off by low pass filter (14), it is defeated by phase-detection
Exit port (15) exports, so as to obtain the phase difference of two paths of signals, finally by the anti-frequency for releasing microwave signal to be measured of phase difference
Rate；When circuit is in signal magnifying state, applying DC offset voltage is in down the clamped beam (9) of the delay line of λ/100 connection
Tension state, the end ground connection of the delay line of λ/4, equivalent to open circuit, signal passes fully through the delay line of λ/100 and is input at delay line top
On corresponding clamped beam (9) grid, the current signal after source-drain electrode output amplification, output port (16) output is amplified by signal,
Due to exist one suspension clamped beam (9), below corresponding region be high resistance area, be advantageous to increase breakdown reverse voltage.
3. it is according to claim 1 or 2 based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector, its feature
When being the frequency detector off working state, two clamped beams (9) are not in contact with gate oxide (2), subtracted all in suspended state
Small grid leakage current, power consumption are effectively reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510378150.0A CN105004919B (en) | 2015-07-01 | 2015-07-01 | Based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510378150.0A CN105004919B (en) | 2015-07-01 | 2015-07-01 | Based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105004919A CN105004919A (en) | 2015-10-28 |
| CN105004919B true CN105004919B (en) | 2017-12-29 |
Family
ID=54377662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510378150.0A Active CN105004919B (en) | 2015-07-01 | 2015-07-01 | Based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105004919B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4463322A (en) * | 1981-08-14 | 1984-07-31 | Texas Instruments Incorporated | Self-biasing for FET-driven microwave VCOs |
| CN101059541A (en) * | 2007-05-18 | 2007-10-24 | 东南大学 | Microelectronic machinery microwave frequency detector and its preparation method |
| CN101387664A (en) * | 2008-10-17 | 2009-03-18 | 东南大学 | Microelectronic machinery microwave frequency detector and method for making same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN102735925A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based frequency detector and detection method |
| CN102735928A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Cantilever beam frequency detector and detection method based on micromechanical gallium arsenide |
| CN103076496A (en) * | 2012-12-26 | 2013-05-01 | 东南大学 | Frequency detection device and method of cantilever beam capacitance type micro mechanical microwave power sensor |
-
2015
- 2015-07-01 CN CN201510378150.0A patent/CN105004919B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4463322A (en) * | 1981-08-14 | 1984-07-31 | Texas Instruments Incorporated | Self-biasing for FET-driven microwave VCOs |
| CN101059541A (en) * | 2007-05-18 | 2007-10-24 | 东南大学 | Microelectronic machinery microwave frequency detector and its preparation method |
| CN101387664A (en) * | 2008-10-17 | 2009-03-18 | 东南大学 | Microelectronic machinery microwave frequency detector and method for making same |
| CN101788605A (en) * | 2010-02-01 | 2010-07-28 | 东南大学 | Wireless-receiving system for detecting microelectronic mechanical microwave frequency and preparation method thereof |
| CN102735925A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based frequency detector and detection method |
| CN102735928A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Cantilever beam frequency detector and detection method based on micromechanical gallium arsenide |
| CN103076496A (en) * | 2012-12-26 | 2013-05-01 | 东南大学 | Frequency detection device and method of cantilever beam capacitance type micro mechanical microwave power sensor |
Non-Patent Citations (1)
| Title |
|---|
| 基于MEMS技术的差分式微波信号相位检测器;焦永昌等;《东南大学学报(自然科学版)》;20090131;第39卷(第1期);141-145 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105004919A (en) | 2015-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104950172B (en) | Double clamped beams switch GaAs base low-leakage current microwave phase detector device | |
| CN102735925B (en) | Micromechanical silicon-based clamped beam-based frequency detector and detection method | |
| CN102735935B (en) | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method | |
| CN102735932B (en) | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method | |
| CN102735926B (en) | Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method | |
| CN102735933A (en) | Micromechanical silicon-based clamped beam-based phase detector and detection method | |
| CN102735928B (en) | Cantilever beam frequency detector and detection method based on micromechanical gallium arsenide | |
| CN102735934B (en) | Phase detector based on micro-mechanical gallium arsenide-based cantilever beam and detection method | |
| CN105044452B (en) | Based on GaAs base low-leakage current double cantilever beam switching frequency detectors | |
| CN102735927A (en) | Frequency detector based on micro-mechanical silicon-based cantilever beam and detection method | |
| CN105044454B (en) | Based on silicon substrate low-leakage current double cantilever beam can moving grid frequency detector | |
| CN105004919B (en) | Based on the double clamped beams of silicon substrate low-leakage current can moving grid frequency detector | |
| CN104935334B (en) | The double clamped beams of silicon substrate low-leakage current can moving grid NMOS phase detectors | |
| CN105049033B (en) | Nor gate based on GaAs base low-leakage current double cantilever beam switch | |
| CN105116222B (en) | Double cantilever beam switchs GaAs base low-leakage current microwave phase detector device | |
| CN104993825B (en) | GaAs base low-leakage current double cantilever beam switchs double grid frequency divider | |
| CN104953980B (en) | The SCF and preparation method of gallium nitride base low-leakage current cantilever beam | |
| CN104950170A (en) | GaAs-based low-leakage-current frequency detector provided with double clamped-beam switches | |
| CN105140227B (en) | The NAND gate of gallium nitride base low-leakage current cantilever beam | |
| CN105024688B (en) | The NAND gate of gallium nitride base low-leakage current clamped beam | |
| CN105004924B (en) | Silicon substrate low-leakage current double cantilever beam can moving grid NMOS phase detectors | |
| CN105141288B (en) | Rest-set flip-flop based on GaAs base low-leakage current double cantilever beam switch nor gate | |
| CN104953969B (en) | Gallium nitride base low-leakage current clamped beam switchs difference amplifier | |
| CN104935255B (en) | Silicon substrate low-leakage current double cantilever beam can moving grid frequency multiplier | |
| CN104993824B (en) | Silicon substrate low-leakage current double cantilever beam can moving grid frequency divider |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |