CN104935336B - Silicon substrate low-leakage current double cantilever beam can moving grid phase-locked loop circuit - Google Patents
Silicon substrate low-leakage current double cantilever beam can moving grid phase-locked loop circuit Download PDFInfo
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- CN104935336B CN104935336B CN201510379710.4A CN201510379710A CN104935336B CN 104935336 B CN104935336 B CN 104935336B CN 201510379710 A CN201510379710 A CN 201510379710A CN 104935336 B CN104935336 B CN 104935336B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 4
- 239000000725 suspension Substances 0.000 claims description 3
- 230000001143 conditioned effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 phosphonium ions Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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Abstract
The movable gate MOSFET phase-locked loop circuit of silicon substrate low-leakage current double cantilever beam of the present invention is by silicon substrate, the enhanced MOSFET of N-type, external low pass filter, voltage controlled oscillator, and high frequency choke coil is constituted, with reduction power consumption, and volume is smaller, the advantages of realizing multi-functional.MOSFET grid is two cantilever beams being suspended on gate oxide, as the input of reference signal and feedback signal, and by direct current biasing control, actuation voltage is designed as MOSFET threshold voltage.Two cantilever beams can moving grid suspend when not contacted with gate oxide, MOSFET cut-offs, gate capacitance is less than conventional MOS FET, can reduce grid leakage current, reduces power consumption.Two cantilever beams can moving grid pull down when being contacted with gate oxide, MOSFET is turned on, reference signal is multiplied with feedback signal by MOSFET, phase information of the drain electrode output containing two signals, by external low pass filter, voltage controlled oscillator circulation until PGC demodulation.
Description
Technical field
The present invention proposes the movable gate MOSFET of silicon substrate low-leakage current double cantilever beam, and (metal oxide semiconductor field-effect is brilliant
Body pipe) phase-locked loop circuit, belong to the technical field of microelectromechanical systems.
Background technology
Phaselocked loop is a kind of loop of locking phase.It uses feedback control principle, utilizes the reference signal of outside input
The frequency and phase of control loop internal oscillation signal, realize output signal frequency to reference signal frequency from motion tracking, directly
Consistent, the constant phase difference to both frequencies.Phase-locked loop circuit is to make a kind of relatively stable method of frequency, one during radio is launched
As be used for Closed loop track circuit.MOSFET appearance in phase-locked loop circuit, can inevitably introduce the grid leakage of cut-off state
Electric current, so as to increase power consumption.With the development of microelectric technique, modern communicationses, radar system require that phase-locked loop circuit has letter
Single structure, small volume and small power consumption, these factors all limit the development of phase-locked loop circuit.
Micro mechanical system has small volume, a low in energy consumption, low cost and other advantages, cantilever beam can moving grid structure development also increasingly
It is ripe.The purpose of the present invention will exactly propose a kind of reality of the movable gate MOSFET phase-locked loop circuit of silicon substrate low-leakage current double cantilever beam
Existing method.
The content of the invention
Technical problem:It is an object of the invention to provide a kind of movable gate MOSFET phaselocked loop of silicon substrate low-leakage current double cantilever beam
Circuit, using grid of the cantilever beam as MOSFET, reduces the grid leakage current of MOSFET cut-off states in phase-locked loop circuit, drop
Low-power consumption, simplifies circuit structure, volume miniaturization.Phase is realized simultaneously also by the control to cantilever beam movable grid
Locking and other functions.
Technical scheme：In order to solve the above technical problems, a kind of silicon substrate low-leakage current double cantilever beam of the present invention can moving grid lock
Phase loop circuit MOSFET is the enhanced MOSFET of N-type, and on a silicon substrate, MOSFET includes source electrode for growth, drains, gate oxide,
Anchor area, cantilever beam can moving grid, drop-down pole plate, insulating barrier, through hole, lead, source ground；
MOSFET using two suspension cantilever beams can moving grid as grid, anchor area is arranged on gate oxide both sides, cantilever
Beam can one end of moving grid be fixed in anchor area, the other end sets drop-down pole on a silicon substrate across being suspended on gate oxide
Plate is located at cantilever beam can be below moving grid end, and drop-down pole plate ground connection, insulating barrier is covered on drop-down pole plate, and direct current biasing passes through
High frequency choke coil and anchor area act on cantilever beam can on moving grid, cantilever beam can the actuation voltage of moving grid be set to MOSFET threshold value
Voltage；Lead connects source electrode respectively by through hole, drain electrode；,
MOSFET drain electrode outputs have two kinds of different working methods, and one kind is selection first port access low pass filter,
Low pass filter output access voltage controlled oscillator, the 3rd port of voltage controlled oscillator output selection is added as feedback signal by anchor area
Being downloaded to a cantilever beam can be on moving grid, and with MOSFET formation backfeed loops, reference signal is loaded into another cantilever by anchor area
Beam can be on moving grid, and another working method of MOSFET drain electrode outputs is that selection second port directly exports amplified signal.
In the phase-locked loop circuit, when direct current biasing is less than actuation voltage, two cantilever beams can moving grid be suspended in gate oxidation
When on layer, MOSFET cut-offs, gate capacitance is smaller, can effectively reduce grid leakage current, reduces power consumption；
When direct current biasing reaches or surpasses actuation voltage, two cantilever beams can moving grid pull down when being contacted with gate oxide,
MOSFET is turned on, and reference signal is multiplied with feedback signal through MOSFET, and drain electrode output includes the phase information of two signals, selection
First port accesses low pass filter, and low pass filter exports the DC voltage relevant with phase difference, accessed as control signal
Voltage controlled oscillator, the output frequency of voltage controlled oscillator is conditioned, and being loaded into cantilever beam as feedback signal can be on moving grid, by ring
The feedback cycle on road, final feedback signal and reference signal frequency are equal, constant phase difference, realize locking, the signal after locking
Exported by the port of voltage controlled oscillator the 4th；
When only one of which cantilever beam can moving grid drop-down when, the cantilever beam being pulled down can moving grid raceway groove formed below, not by under
It can be high resistance area below moving grid to draw cantilever beam, and the structure that raceway groove is connected with high resistance area plays a part of improving breakdown reverse voltage,
The cantilever beam being only pulled down can be on moving grid gating signal can select defeated by second port by MOSFET enhanced processings
Go out amplified signal, when only loading reference signal cantilever beam can moving grid be pulled down when, second port output frequency be with reference to believe
Number frequency frefAmplified signal, when only loading feedback signal cantilever beam can moving grid be pulled down when, the frequency of feedback signal is
The output frequency f of voltage controlled oscillator0, second port output frequency is f0Amplified signal.
Beneficial effect：Compared with existing phase-locked loop circuit, this new silicon substrate low-leakage current double cantilever beam can moving grid
As grid, the de- of grid and gate oxide is realized in MOSFET cut-off states using two cantilever beams for MOSFET phase-locked loop circuits
From can reduce circuit leakage current, reduce power consumption；In addition, cantilever beam can moving grid structure to facilitate circuit controllable, can not only lead to
Cross two cantilever beams of drop-down can moving grid connect realize PGC demodulation under the circulation feedback of circuit outside, and can be single by pulling down
Cantilever beam can independent amplification of the moving grid to gating signal；The use of the movable gate technique of cantilever beam, also to simplify the structure, volume
Miniaturization.
Brief description of the drawings
Fig. 1 is the top view of the movable gate MOSFET phase-locked loop circuit of silicon substrate low-leakage current double cantilever beam of the present invention.
Fig. 2 for the movable gate MOSFET phase-locked loop circuit of Fig. 1 silicon substrate low-leakage current double cantilever beams A-A ' to profile.
Fig. 3 for the movable gate MOSFET phase-locked loop circuit of Fig. 1 silicon substrate low-leakage current double cantilever beams B-B ' to profile.
Fig. 4 is that movable two cantilever beams of gate MOSFET of Fig. 1 silicon substrate low-leakage current double cantilever beams can the raceway groove that pulls down of moving grid
Schematic diagram
Fig. 5 be the single cantilever beam of Fig. 1 movable gate MOSFETs of silicon substrate low-leakage current double cantilever beam can moving grid drop-down raceway groove show
It is intended to.
Have in figure：Silicon substrate 1, source electrode 2, drain electrode 3, gate oxide 4, anchor area 5, cantilever beam can moving grid 6, pull down pole plate 7, absolutely
Edge layer 8, through hole 9, lead 10, first port 11, second port 12, the 3rd port 13, the 4th port 14.
Embodiment
The invention provides a kind of movable gate MOSFET phase-locked loop circuit of silicon substrate low-leakage current double cantilever beam.Including silicon lining
Bottom, the enhanced MOSFET of N-type, and external low pass filter, voltage controlled oscillator, high frequency choke coil；MOSFET is grown in silicon
On substrate, including source electrode, drain electrode, gate oxide, two cantilever beams can moving grid, anchor area, drop-down pole plate, insulating barriers.MOSFET's
Grid is across being suspended in two cantilever beams on gate oxide.Anchor area is arranged on gate oxide side, and cantilever beam can moving grid
By anchor area on gate oxide；Drop-down pole plate be arranged on cantilever beam can moving grid end below；Insulating barrier is covered in down
Draw on pole plate.
Reference signal and feedback signal in phase-locked loop circuit are loaded into two cantilever beams by anchor area respectively can be on moving grid.
Direct current biasing acts on cantilever beam by high frequency choke coil and anchor area can be on moving grid, drop-down pole plate ground connection.
The actuation voltage of cantilever beam is designed as MOSFET threshold voltage.If direct current biasing is less than actuation voltage, two hang
Arm beam can moving grid when being suspended on gate oxide, MOSFET can not be turned on, because grid is disengaged with gate oxide, grid
Electric capacity is smaller, can effectively reduce leakage current, reduces power consumption.
When direct current biasing reaches or surpasses actuation voltage, two cantilever beams can moving grid by direct current biasing realize drop-down with
When gate oxide is contacted, MOSFET conductings, reference signal is multiplied with feedback signal through MOSFET, and drain electrode output contains two signals
Between phase information.Under the circulation feedback effect of low pass filter and voltage controlled oscillator, locking is completed.
When only one of which cantilever beam can moving grid drop-down contacted with gate oxide when, this cantilever beam can moving grid ditch formed below
Road, another cantilever beam not being pulled down can be high resistance area below moving grid, can increase MOSFET breakdown reverse voltage.This
When, only pulling down gating signal that cantilever beam can be on moving grid can be for transmission on MOSFET, passing through MOSFET amplification outputs.So as to
By to a cantilever beam can moving grid independent drop-down, realize amplification to individual signals, expand the application of circuit.
The movable gate MOSFET phase-locked loop circuit of silicon substrate low-leakage current double cantilever beam of the present invention includes silicon substrate 1, is arranged on
The enhanced MOSFET of N-type on silicon substrate, external low pass filter, voltage controlled oscillator, high frequency choke coil.
MOSFET include source electrode 2, drain electrode 3, gate oxide 4, anchor area 5, cantilever beam can moving grid 6, pull down pole plate 7, insulating barrier
8, through hole 9, lead 10.Wherein, source electrode 2 is grounded, MOSFET grid be across and be suspended in two on gate oxide hang
Arm beam can moving grid 6, source electrode 2 and drain electrode 3 be oppositely arranged, and gate oxide 4 is connected between source and drain, and anchor area 5 is arranged on gate oxide 4
Side, cantilever beam can moving grid 6 by anchor area 5 on gate oxide 4, drop-down pole plate 7 is arranged on cantilever beam can the end of moving grid 6
End lower section, insulating barrier 8 is covered on drop-down pole plate 7.
The output of drain electrode 3 has two kinds of connected modes, a kind of to access low pass filter, low pass filter output through first port 11
Voltage controlled oscillator is accessed, voltage controlled oscillator output accesses a cantilever beam as feedback signal by anchor area 5 can moving grid 6, reference
Signal is loaded into another cantilever beam by anchor area 5 can be on moving grid 6.Another connected mode of the output of drain electrode 3 is selection second
Port 12 directly exports amplified signal.
Direct current biasing acts on cantilever beam by high frequency choke coil and anchor area 5 can be on moving grid 6, and drop-down pole plate 7 is grounded.Cantilever
Beam can the actuation voltage of moving grid 6 be designed as MOSFET threshold voltage.
When direct current biasing is less than actuation voltage, two cantilever beams can moving grid 6 be in suspended state and do not connect with gate oxide 4
When touching, MOSFET cut-offs.Due to cantilever beam can moving grid 6 disengaged with gate oxide 4, gate capacitance is smaller, can effectively subtract
The generation of small leakage current, reduces circuit power consumption.
When direct current biasing reaches or more than actuation voltage, two cantilever beams can moving grid 6 pull down and contacted with gate oxide 4
When, conduct electrons raceway groove is produced between source electrode 2 and drain electrode 3, as shown in figure 4, MOSFET is turned on.Reference signal and feedback signal are logical
Cross MOSFET and realize multiplication, the output of drain electrode 3 contains the phase information between two signals, the output selection first port of drain electrode 3
11 inputs are filtered to low pass filter, and HFS is filtered out, and output includes the relevant DC voltage of phase information.Directly
Stream voltage can be expressed as：
UL=K cos ((ωref-ωback)t+φ) (1)
Wherein K is MOSFET gain coefficients, ωrefOn the basis of signal angular frequency, ωbackFor feedback signal angular frequency, φ is
Proper phase is poor.DC voltage adjusts the output frequency of voltage controlled oscillator as control signal.Voltage controlled oscillator after regulation is defeated
Go out frequencies omegaoIt can be expressed by following formula：
Voltage controlled oscillator output is loaded into cantilever beam as feedback signal can be on moving grid 6, until final feedback signal and ginseng
The frequency for examining signal is consistent, constant phase difference：
ωback=ωo=ωref (3)
Phase-locked loop circuit completes locking, and voltage controlled oscillator output signal frequency is consistent with reference signal.
When only one of which cantilever beam can moving grid 6 be pulled down and contacted with gate oxide 4, another cantilever beam can moving grid 6 be in
During suspended state.The cantilever beam being pulled down can the raceway groove formed below of moving grid 6, the cantilever beam not being pulled down can moving grid 6 it is formed below
High resistance area, as shown in figure 5, the structure that raceway groove is connected with high resistance area can effectively improve the breakdown reverse voltage of device.Now,
The cantilever beam being only pulled down can be on moving grid 6 signal can be amplified by MOSFET, amplified signal is exported through second port 12.
When only loading reference signal cantilever beam can moving grid 6 be pulled down when, the output frequency of second port 12 be reference signal frequency fref
Amplified signal, when only loading feedback signal cantilever beam can moving grid 6 be pulled down when, the frequency of feedback signal is VCO
The output frequency f of deviceo, the output frequency of second port 12 is foAmplified signal.Circuit has multi-functional.
The preparation method of the low-leakage current frequency divider based on the movable gate MOSFET of silicon substrate cantilever beam of the present invention is as follows：
1) p-type Si substrates are prepared；
2) bottom oxide growth
3) deposited silicon nitride；
4) photoetching, etch silicon nitride formation MOSFET source and drain electrode；
5) field is aoxidized；
6) silicon nitride and basal oxygen sheet are removed；
7) progress gate oxidation, adjusting threshold voltage, it is enhanced to make MOSFET；
8) deposit polycrystalline silicon, and photoetching, retain the polysilicon of the anchor zone position of cantilever beam；
9) plating evaporation growth Al；
10) photoresist is coated, retains the photoresist above drop-down pole plate；
11) Al is anti-carved, drop-down pole plate is formed；
12) deposition insulating layer, the Si that 0.1 μm of epitaxial growthxN1-xInsulating barrier；
13) photoetching window, etches away unnecessary SixN1-x：
14) photoresist is coated, retains the insulating barrier of drop-down pole plate；
15) reactive ion etching is utilized, the silicon nitride medium layer formed on drop-down pole plate；
16) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retaining cantilever beam can the lower section of moving grid 5
Sacrifice layer；
17) plating evaporation growth Al；
18) photoresist is coated, retains the photoresist above cantilever beam；
19) Al is anti-carved, forming cantilever beam can moving grid；
20) photoresist is coated, photoetching hand-hole injects N+ phosphonium ions, forms MOSFET source and drain electrode；
21) through hole and lead are made, photoresist is coated, the photoresist of source-drain electrode contact zone is removed, gold germanium is evaporated in vacuo
Ni au, is peeled off, alloying formation Ohmic contact；
22) PMGI sacrifice layers are discharged, the cantilever beam suspended is formed；
23) MOSFET of preparation is connected with external circuit, constitutes phase-locked loop circuit.
Difference with the prior art of the present invention is：
The movable gate MOSFET phase-locked loop circuit of silicon substrate low-leakage current double cantilever beam of the present invention is using two cantilever beam structures
As MOSFET grid, control the drop-down or suspension of cantilever beam by direct current biasing, cantilever beam can moving grid actuation voltage
MSOFET threshold voltage is designed as, so as to control MOSFET conducting and cut-off.In cut-off state MOSFET two grids
Disengaged with gate oxide, the generation of leakage current can be reduced.Two cantilever beams can moving grid pull down and contacted with gate oxide
When, reference signal is passed through realization on MOSFET with feedback signal and is multiplied, in low pass filter, the ringing of voltage controlled oscillator
Under, it is final to realize lock phase.Moreover it is possible to the amplification of individual signals be realized by pulling down single cantilever beam, while increase is reversely hit
Wear voltage.The use of micro mechanical technology so that circuit power consumption is reduced, and simple in construction, volume diminishes.
Claims (1)
1. a kind of silicon substrate low-leakage current double cantilever beam can moving grid phase-locked loop circuit, it is characterised in that phase-locked loop circuit MOSFET is
The enhanced MOSFET of N-type, is grown on silicon substrate (1), and MOSFET includes source electrode (2), drains (3), gate oxide (4), anchor area
(5), cantilever beam can moving grid (6), drop-down pole plate (7), insulating barrier (8), through hole (9), lead (10), source electrode (2) ground connection；
MOSFET using two suspension cantilever beams can moving grid (6) as grid, anchor area (5) are arranged on gate oxide (4) both sides,
Cantilever beam can one end of moving grid (6) be fixed in anchor area (5), the other end is arranged on silicon lining across being suspended on gate oxide (4)
Drop-down pole plate (7) on bottom (1) is located at cantilever beam can moving grid (6) end lower section, drop-down pole plate (7) ground connection, insulating barrier (8) covering
On drop-down pole plate (7), direct current biasing acts on cantilever beam by high frequency choke coil and anchor area (5) can be on moving grid (6), cantilever
Beam can the actuation voltage of moving grid (6) be set to MOSFET threshold voltage；Lead (10) connects source electrode (2) respectively by through hole (9),
Drain (3)；
MOSFET drain electrodes (3) output has two kinds of different working methods, and one kind is selection first port (11) access LPF
Device, low pass filter output access voltage controlled oscillator, voltage controlled oscillator output the 3rd port (13) of selection is logical as feedback signal
Guo Mao areas (5) are loaded into a cantilever beam can be on moving grid (6), and with MOSFET formation backfeed loops, reference signal passes through anchor area (5)
Being loaded into another cantilever beam can be on moving grid (6), and another working method of MOSFET drain electrodes (3) output is selection second port
(12) amplified signal is directly exported；
Can be in moving grid phase-locked loop circuit, when direct current biasing is less than actuation voltage, two cantilevers in silicon substrate low-leakage current double cantilever beam
Beam can moving grid (6) when being suspended on gate oxide (4), MOSFET cut-offs, gate capacitance is smaller, can effectively reduce grid
Leakage current, reduces power consumption；
When direct current biasing reaches or surpasses actuation voltage, two cantilever beams can moving grid (6) pull down and contacted with gate oxide (4)
When, MOSFET conductings, reference signal is multiplied with feedback signal through MOSFET, and phase difference of drain electrode (3) output comprising two signals is believed
Breath, selection first port (11) access low pass filter, low pass filter exports the DC voltage relevant with phase difference, is used as control
Signal processed accesses voltage controlled oscillator, and the output frequency of voltage controlled oscillator is conditioned, and it is movable to be loaded into cantilever beam as feedback signal
On grid (6), by the feedback cycle of loop, final feedback signal and reference signal frequency are equal, constant phase difference, realize lock
Fixed, the signal after locking is exported by the port (14) of voltage controlled oscillator the 4th；
When only one of which cantilever beam can moving grid (6) drop-down when, the cantilever beam being pulled down can moving grid (6) raceway groove formed below, not by
It can be high resistance area below moving grid (6) to pull down cantilever beam, and the structure that raceway groove is connected with high resistance area, which is played, improves breakdown reverse voltage
Effect, the gating signal that the cantilever beam being only pulled down can be on moving grid (6) can be selected by the by MOSFET enhanced processings
Two-port netwerk (12) export amplified signal, when only loading reference signal cantilever beam can moving grid (6) be pulled down when, second port
(12) output frequency is reference signal frequency frefAmplified signal, when only loading feedback signal cantilever beam can moving grid (6) quilt
During drop-down, the frequency of feedback signal is the output frequency f of voltage controlled oscillator0, second port (12) output frequency is f0Amplification letter
Number.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
| CN102735935A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100465235B1 (en) * | 2002-04-16 | 2005-01-13 | 삼성전자주식회사 | RF power sensor capable of sensing power of RF signal using capacitance |
| WO2006055960A2 (en) * | 2004-11-20 | 2006-05-26 | Scenterra, Inc. | Device for emission of high frequency signals |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102735932A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical gallium arsenide-based clamped beam-based phase detector and detection method |
| CN102735935A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method |
Non-Patent Citations (2)
| Title |
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| 双栅极场效应管图像中频放大器;听声;《电子技术》;19850401(第3期);7-10页 * |
| 砷化镓双栅场效应管及其在微波电路中的应用;阮德兴;《电讯技术》;19870831;第27卷(第4期);26-35页 * |
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