CN104992969A - 具有缓冲层的半导体器件及其制作方法 - Google Patents
具有缓冲层的半导体器件及其制作方法 Download PDFInfo
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- CN104992969A CN104992969A CN201510410797.7A CN201510410797A CN104992969A CN 104992969 A CN104992969 A CN 104992969A CN 201510410797 A CN201510410797 A CN 201510410797A CN 104992969 A CN104992969 A CN 104992969A
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- silicon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 85
- 230000008569 process Effects 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 27
- 238000002347 injection Methods 0.000 claims abstract description 16
- 239000007924 injection Substances 0.000 claims abstract description 16
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims description 133
- 238000000576 coating method Methods 0.000 claims description 133
- 239000010408 film Substances 0.000 claims description 53
- 239000002800 charge carrier Substances 0.000 claims description 16
- 239000002210 silicon-based material Substances 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000013081 microcrystal Substances 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001556 precipitation Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 13
- 238000000137 annealing Methods 0.000 abstract description 10
- 238000005468 ion implantation Methods 0.000 abstract description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 18
- 229910000077 silane Inorganic materials 0.000 description 18
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 17
- 238000002360 preparation method Methods 0.000 description 13
- 229910000085 borane Inorganic materials 0.000 description 9
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 8
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012656 cationic ring opening polymerization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510410797.7A CN104992969B (zh) | 2015-07-14 | 2015-07-14 | 具有缓冲层的半导体器件及其制作方法 |
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CN201510410797.7A CN104992969B (zh) | 2015-07-14 | 2015-07-14 | 具有缓冲层的半导体器件及其制作方法 |
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CN104992969A true CN104992969A (zh) | 2015-10-21 |
CN104992969B CN104992969B (zh) | 2018-05-01 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105552121A (zh) * | 2016-02-14 | 2016-05-04 | 西安工程大学 | 基于锗硅集电区的igbt结构 |
CN106449743A (zh) * | 2016-11-04 | 2017-02-22 | 株洲中车时代电气股份有限公司 | 一种绝缘栅双极晶体管及其制备方法 |
WO2017092279A1 (zh) * | 2015-11-30 | 2017-06-08 | 株洲中车时代电气股份有限公司 | Igbt背面制作方法及igbt结构 |
CN106935500A (zh) * | 2015-12-31 | 2017-07-07 | 节能元件控股有限公司 | 绝缘栅双极晶体管的场截止层的低温外延制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1180924A (zh) * | 1996-09-05 | 1998-05-06 | 哈里公司 | 形成带有组合可控缓冲层的功率半导体器件的方法 |
KR20000013509A (ko) * | 1998-08-10 | 2000-03-06 | 김덕중 | 다층 버퍼 구조를 갖는 절연게이트 바이폴라 트랜지스터 및 그제조방법 |
US20010026984A1 (en) * | 2000-04-04 | 2001-10-04 | Yun Chong Man | Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode, and method for fabricating the same |
CN1379480A (zh) * | 2001-03-29 | 2002-11-13 | 株式会社东芝 | 半导体器件及其制造方法 |
CN1953204A (zh) * | 2005-10-18 | 2007-04-25 | 国际整流器公司 | 用于电容性负载的沟道绝缘栅双极晶体管 |
CN103151262A (zh) * | 2011-12-07 | 2013-06-12 | 无锡华润华晶微电子有限公司 | 平面型绝缘栅双极型晶体管及其制备方法 |
-
2015
- 2015-07-14 CN CN201510410797.7A patent/CN104992969B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1180924A (zh) * | 1996-09-05 | 1998-05-06 | 哈里公司 | 形成带有组合可控缓冲层的功率半导体器件的方法 |
KR20000013509A (ko) * | 1998-08-10 | 2000-03-06 | 김덕중 | 다층 버퍼 구조를 갖는 절연게이트 바이폴라 트랜지스터 및 그제조방법 |
US20010026984A1 (en) * | 2000-04-04 | 2001-10-04 | Yun Chong Man | Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode, and method for fabricating the same |
CN1379480A (zh) * | 2001-03-29 | 2002-11-13 | 株式会社东芝 | 半导体器件及其制造方法 |
CN1953204A (zh) * | 2005-10-18 | 2007-04-25 | 国际整流器公司 | 用于电容性负载的沟道绝缘栅双极晶体管 |
CN103151262A (zh) * | 2011-12-07 | 2013-06-12 | 无锡华润华晶微电子有限公司 | 平面型绝缘栅双极型晶体管及其制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017092279A1 (zh) * | 2015-11-30 | 2017-06-08 | 株洲中车时代电气股份有限公司 | Igbt背面制作方法及igbt结构 |
CN106935500A (zh) * | 2015-12-31 | 2017-07-07 | 节能元件控股有限公司 | 绝缘栅双极晶体管的场截止层的低温外延制作方法 |
CN105552121A (zh) * | 2016-02-14 | 2016-05-04 | 西安工程大学 | 基于锗硅集电区的igbt结构 |
CN106449743A (zh) * | 2016-11-04 | 2017-02-22 | 株洲中车时代电气股份有限公司 | 一种绝缘栅双极晶体管及其制备方法 |
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CN104992969B (zh) | 2018-05-01 |
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Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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Effective date of registration: 20201014 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
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