CN104981427A - 氮化铜微粒及其制造方法 - Google Patents

氮化铜微粒及其制造方法 Download PDF

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Publication number
CN104981427A
CN104981427A CN201480006826.7A CN201480006826A CN104981427A CN 104981427 A CN104981427 A CN 104981427A CN 201480006826 A CN201480006826 A CN 201480006826A CN 104981427 A CN104981427 A CN 104981427A
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CN
China
Prior art keywords
copper
fine particles
copper nitride
nitride fine
particles according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480006826.7A
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English (en)
Chinese (zh)
Inventor
中村考志
蛯名武雄
林拓道
花冈隆昌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
National Institute of Advanced Industrial Science and Technology AIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute of Advanced Industrial Science and Technology AIST filed Critical National Institute of Advanced Industrial Science and Technology AIST
Publication of CN104981427A publication Critical patent/CN104981427A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0615—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium
    • C01B21/0625—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with transition metals other than titanium, zirconium or hafnium with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
CN201480006826.7A 2013-01-31 2014-01-31 氮化铜微粒及其制造方法 Pending CN104981427A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013017510 2013-01-31
JP2013-017510 2013-01-31
JP2013-225296 2013-10-30
JP2013225296A JP6057379B2 (ja) 2013-01-31 2013-10-30 窒化銅微粒子およびその製造方法
PCT/JP2014/052321 WO2014119748A1 (ja) 2013-01-31 2014-01-31 窒化銅微粒子およびその製造方法

Publications (1)

Publication Number Publication Date
CN104981427A true CN104981427A (zh) 2015-10-14

Family

ID=51262445

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480006826.7A Pending CN104981427A (zh) 2013-01-31 2014-01-31 氮化铜微粒及其制造方法

Country Status (4)

Country Link
JP (1) JP6057379B2 (https=)
KR (1) KR20150112984A (https=)
CN (1) CN104981427A (https=)
WO (1) WO2014119748A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110642304A (zh) * 2019-10-09 2020-01-03 上海师范大学 一种超级电容器用三金属氮化物材料及其制备方法
CN116924697A (zh) * 2023-07-31 2023-10-24 上海耀皮工程玻璃有限公司 一种Low-E镀膜玻璃调色层及其制备方法和用途
CN119282131A (zh) * 2024-11-18 2025-01-10 济源星翰新材料科技有限公司 一种微米铜粉的制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015147561A1 (ko) * 2014-03-26 2015-10-01 전자부품연구원 전도체 패턴의 형성이 용이한 복합소재와 그 복합소재를 제조하는 방법 및 상기 복합소재에서 시드 소재인 구리질화물 및 그 구리질화물을 합성하는 방법
JP6574553B2 (ja) * 2014-06-26 2019-09-11 昭和電工株式会社 導電パターン形成用組成物および導電パターン形成方法
KR102303767B1 (ko) * 2017-11-01 2021-09-23 한국전자기술연구원 전도체 패턴용 구리질화물 분말의 제조 방법
CN111450867A (zh) * 2020-05-09 2020-07-28 青岛科技大学 用于电催化二氧化碳还原的Cu3N纳米催化剂的制备方法
CN115057417B (zh) * 2022-06-08 2023-09-12 安徽大学 一种氮化铜纳米片的制备及其在甲酸盐电合成中的应用
CN116516280A (zh) * 2023-04-27 2023-08-01 常州大学 一种高效节能的工件氮化方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187812A1 (en) * 2004-06-07 2007-08-16 Akira Izumi Method for processing copper surface, method for forming copper pattern wiring and semiconductor device manufactured using such method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3870273B2 (ja) * 2004-12-28 2007-01-17 国立大学法人九州工業大学 銅パターン配線形成方法及び該方法を用いて作成された半導体装置、並びにナノ銅金属粒子
JP5778382B2 (ja) * 2008-10-22 2015-09-16 東ソー株式会社 金属膜製造用組成物、金属膜の製造方法及び金属粉末の製造方法
JP5243510B2 (ja) * 2010-10-01 2013-07-24 富士フイルム株式会社 配線材料、配線の製造方法、及びナノ粒子分散液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070187812A1 (en) * 2004-06-07 2007-08-16 Akira Izumi Method for processing copper surface, method for forming copper pattern wiring and semiconductor device manufactured using such method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JONGLAK CHOI ET AL: ""Solvothermal Synthesis of Nanocrystalline Copper Nitride from an Energetically Unstable Copper Azide Precursor"", 《INORG. CHEM》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110642304A (zh) * 2019-10-09 2020-01-03 上海师范大学 一种超级电容器用三金属氮化物材料及其制备方法
CN110642304B (zh) * 2019-10-09 2021-12-31 上海师范大学 一种超级电容器用三金属氮化物材料及其制备方法
CN116924697A (zh) * 2023-07-31 2023-10-24 上海耀皮工程玻璃有限公司 一种Low-E镀膜玻璃调色层及其制备方法和用途
CN119282131A (zh) * 2024-11-18 2025-01-10 济源星翰新材料科技有限公司 一种微米铜粉的制备方法
CN119282131B (zh) * 2024-11-18 2025-12-30 济源星翰新材料科技有限公司 一种微米铜粉的制备方法

Also Published As

Publication number Publication date
WO2014119748A1 (ja) 2014-08-07
KR20150112984A (ko) 2015-10-07
JP6057379B2 (ja) 2017-01-11
JP2014166939A (ja) 2014-09-11

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Application publication date: 20151014