CN104952861A - 一种低成本、高亮度、大功率白光led - Google Patents
一种低成本、高亮度、大功率白光led Download PDFInfo
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- CN104952861A CN104952861A CN201410120470.1A CN201410120470A CN104952861A CN 104952861 A CN104952861 A CN 104952861A CN 201410120470 A CN201410120470 A CN 201410120470A CN 104952861 A CN104952861 A CN 104952861A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Abstract
本发明公开了一种低成本、高亮度、大功率白光LED,包括支架、第一晶片、第二晶片、荧光胶体、金线,所述金线的两端分别与所述第一、第二晶片及支架底部固定连接,晶片外表面包覆荧光胶体,荧光胶体上表面与所述支架顶面水平对齐,支架底部设有散热片,所述第一、第二晶片通过固晶粘结胶分别固定在固晶区域内,第一、第二晶片相互串联导通。支架碗杯内部采用大平杯设计,固晶区域和散热面积较传统支架大。可以放置两颗尺寸较大的晶片,实现双晶串联;又可以将晶片的热量及时通过底部散热片散发出去,提高LED的光衰性能。
Description
技术领域
本发明公开了一种低成本、高亮度、大功率白光LED,涉及光电技术领域。
背景技术
作为目前全球最受瞩目的新一代光源,LED因其高亮度、低热量、长寿命、环保、可回收再利用等优点,被称为是21世纪最有发展前景的绿色照明光源。LED照明优势众多,但价格问题一直是制约LED照明推广的最大问题。为了解决成本问题,LED双晶片串联作为其中一种降低成本方案应运而生。但由于固晶区域的限制,传统的白光LED封装体在实行双晶串联的技术方案时,两个晶片没有足够的安装空间和焊线空间。
发明内容
本发明所要解决的技术问题是:针对现有技术的缺陷,提供一种低成本、高亮度、大功率白光LED。
本发明为解决上述技术问题采用以下技术方案:
一种低成本、高亮度、大功率白光LED,包括支架、第一晶片、第二晶片、荧光胶体、金线,所述金线的两端分别与所述第一、第二晶片及支架底部固定连接,晶片外表面包覆荧光胶体,荧光胶体上表面与所述支架顶面水平对齐,支架采用大平杯设计,固晶区域较大,所述第一、第二品片通过固晶粘结胶分别固定在固晶区域内,第一、第二晶片相互串联导通,支架底部还设置有散热片。
作为本发明的进一步优选方案,所述第一、第二晶片均为蓝色晶片,蓝色晶片的激发波长为452~470纳米。
作为本发明的进一步优选方案,所述荧光胶体包括胶粘剂和荧光粉。
作为本发明的进一步优选方案,所述荧光粉为峰值波长540纳米左右的绿色荧光粉和峰值波长为620纳米左右的红色荧光粉。
作为本发明的进一步优选方案,所述胶粘剂为环氧树脂或者硅胶或者环氧树脂与硅胶的混合物。
本发明采用以上技术方案与现有技术相比,具有以下技术效果:
(1)与传统支架相比,支架设计采用大平杯设计,固晶区域较大,可以放置两颗尺寸较大的芯片,实现双晶串联;较传统单晶LED器件亮度提高约1倍。从LM/元的角度考虑,大大节约了成本。
(2)支架底部增设散热片,结构简单,有效降低了热阻,可将蓝色晶片产生的热量直接散发出去,改善了白光LED的光衰性能,延长了白光LED的使用寿命。
附图说明
图1是本发明的结构示意图,
其中:1.支架,2.蓝色晶片,3.蓝色晶片,4.荧光胶体,5.金线
具体实施方式
下面结合附图对本发明的技术方案做进一步的详细说明:
本发明的结构示意图如图1所示,具体包括支架、第一蓝色晶片、第二蓝色晶片、荧光胶体、金线,第一蓝色晶片和第二蓝色晶片通过固晶粘结胶固定在支架底部,其激发波长为452~470纳米,第一蓝色晶片与第二蓝色晶片通过金线实现串联连接;第一蓝色晶片和第二蓝色晶片外表面包覆有一层荧光胶体,荧光胶体上表面与支架顶面平齐,荧光胶体由胶粘剂和荧光粉混合烘干制成,荧光粉为540纳米左右的绿色荧光粉和峰值波长为620纳米左右的红色荧光粉。其中胶粘剂可以是环氧树脂、硅胶,或二者的混合物。支架底部碗杯采用大平杯设计,所述第一、第二晶片通过固晶粘结胶分别固定在固晶区域内,第一、第二晶片相互串联导通,支架底部还设置有散热片。
本发明的制作方法为:将第一蓝色晶片和第二蓝色晶片固定在支架内,焊好线,再将胶粘剂和荧光粉的混合物按比例混合调匀,涂敷在第一蓝色晶片和第二蓝色晶片上,烘烤固化成形。
Claims (5)
1.一种低成本、高亮度、大功率白光LED,包括支架、第一晶片、第二晶片、荧光胶体、金线,所述金线的两端分别与所述第一、第二晶片及支架底部固定连接,晶片外表面包覆荧光胶体,荧光胶体上表面与所述支架顶面水平对齐,其特征在于:支架碗杯内部采用大平杯设计,所述第一、第二晶片通过固晶粘结胶分别固定在固晶区域内,第一、第二晶片相互串联导通,支架底部设置有散热片。
2.如权利要求1所述的一种低成本、高亮度、大功率白光LED,其特征在于:所述第一、第二晶片均为蓝色晶片,蓝色晶片的激发波长为452~470纳米。
3.如权利要求1所述的一种低成本、高亮度、大功率白光LED,其特征在于:所述荧光胶体包括胶粘剂和荧光粉。
4.如权利要求3所述的一种低成本、高亮度、大功率白光LED,其特征在于:所述荧光粉的峰值波长540纳米左右的绿色荧光粉和峰值波长为620纳米左右的红色荧光粉。
5.如权利要求3所述的一种低成本、高亮度、大功率白光LED,其特征在于:所述胶粘剂为环氧树脂或者硅胶或者环氧树脂与硅胶的混合物。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107799508A (zh) * | 2017-11-03 | 2018-03-13 | 江苏稳润光电科技有限公司 | 一种解决散热问题的led灯丝及制造方法 |
CN113540315A (zh) * | 2021-06-11 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种植物照明led封装方法 |
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CN102278641A (zh) * | 2011-08-25 | 2011-12-14 | 上海亚明灯泡厂有限公司 | 白光led灯及其生成高显色白光的方法 |
CN102454945A (zh) * | 2010-10-27 | 2012-05-16 | 深圳市日上光电有限公司 | 一种获得高显色性暖白光的方法及其封装结构 |
CN102891245A (zh) * | 2012-09-17 | 2013-01-23 | 温州大学 | 将荧光晶片用于大功率白光led的封装结构及其封装方法 |
CN103346245A (zh) * | 2013-06-25 | 2013-10-09 | 彩虹集团公司 | 一种白光led及制备方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN201651846U (zh) * | 2010-01-26 | 2010-11-24 | 吴中林 | 一种白光led光源 |
CN102454945A (zh) * | 2010-10-27 | 2012-05-16 | 深圳市日上光电有限公司 | 一种获得高显色性暖白光的方法及其封装结构 |
CN102278641A (zh) * | 2011-08-25 | 2011-12-14 | 上海亚明灯泡厂有限公司 | 白光led灯及其生成高显色白光的方法 |
CN102891245A (zh) * | 2012-09-17 | 2013-01-23 | 温州大学 | 将荧光晶片用于大功率白光led的封装结构及其封装方法 |
CN103346245A (zh) * | 2013-06-25 | 2013-10-09 | 彩虹集团公司 | 一种白光led及制备方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107799508A (zh) * | 2017-11-03 | 2018-03-13 | 江苏稳润光电科技有限公司 | 一种解决散热问题的led灯丝及制造方法 |
CN113540315A (zh) * | 2021-06-11 | 2021-10-22 | 东莞市立德达光电科技有限公司 | 一种植物照明led封装方法 |
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