CN104934478B - 高性能的鳍式场效应晶体管 - Google Patents

高性能的鳍式场效应晶体管 Download PDF

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Publication number
CN104934478B
CN104934478B CN201510204265.8A CN201510204265A CN104934478B CN 104934478 B CN104934478 B CN 104934478B CN 201510204265 A CN201510204265 A CN 201510204265A CN 104934478 B CN104934478 B CN 104934478B
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fin
interarea
semiconductor material
silicon
fins
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Chinese (zh)
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CN104934478A (zh
Inventor
程宁
P·J·麦克尔赫尼
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Altera Corp
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Altera Corp
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Priority claimed from US14/222,629 external-priority patent/US20150206965A1/en
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing & Machinery (AREA)
CN201510204265.8A 2014-03-22 2015-03-20 高性能的鳍式场效应晶体管 Active CN104934478B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/222,629 2014-03-22
US14/222,629 US20150206965A1 (en) 2013-11-14 2014-03-22 High performance finfet

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CN104934478A CN104934478A (zh) 2015-09-23
CN104934478B true CN104934478B (zh) 2019-02-19

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KR (1) KR101738510B1 (ko)
CN (1) CN104934478B (ko)
TW (1) TWI549295B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170179127A1 (en) * 2015-12-18 2017-06-22 Globalfoundries Inc. Semiconductor structure having silicon germanium fins and method of fabricating same
US9825036B2 (en) 2016-02-23 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and method for semiconductor device
TWI622171B (zh) * 2016-06-24 2018-04-21 財團法人國家實驗研究院 異質整合半導體裝置及其製造方法
US10134893B2 (en) * 2017-02-22 2018-11-20 International Business Machines Corporation Fabrication of a vertical field effect transistor device with a modified vertical fin geometry
CN110571195B (zh) * 2018-06-05 2021-12-21 中芯国际集成电路制造(上海)有限公司 一种sram及其制造方法和电子装置
US10699967B2 (en) 2018-06-28 2020-06-30 International Business Machines Corporation Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation
KR102603500B1 (ko) 2018-10-26 2023-11-17 한온시스템 주식회사 차량용 공조장치
KR20220099645A (ko) 2021-01-07 2022-07-14 한온시스템 주식회사 차량용 공조장치
US20230031490A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Strained nanosheets on silicon-on-insulator substrate

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449753B2 (en) * 2006-04-10 2008-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Write margin improvement for SRAM cells with SiGe stressors
JP5431372B2 (ja) * 2011-01-05 2014-03-05 株式会社東芝 半導体装置およびその製造方法
CN102956453B (zh) * 2011-08-19 2017-02-22 联华电子股份有限公司 半导体装置及其制作方法
US20130075818A1 (en) * 2011-09-23 2013-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. 3D Semiconductor Device and Method of Manufacturing Same
US9012286B2 (en) * 2012-04-12 2015-04-21 Globalfoundries Inc. Methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices
US9728464B2 (en) * 2012-07-27 2017-08-08 Intel Corporation Self-aligned 3-D epitaxial structures for MOS device fabrication

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Publication number Publication date
KR101738510B1 (ko) 2017-05-22
TWI549295B (zh) 2016-09-11
CN104934478A (zh) 2015-09-23
KR20150110404A (ko) 2015-10-02
TW201541638A (zh) 2015-11-01

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