CN104934478B - 高性能的鳍式场效应晶体管 - Google Patents
高性能的鳍式场效应晶体管 Download PDFInfo
- Publication number
- CN104934478B CN104934478B CN201510204265.8A CN201510204265A CN104934478B CN 104934478 B CN104934478 B CN 104934478B CN 201510204265 A CN201510204265 A CN 201510204265A CN 104934478 B CN104934478 B CN 104934478B
- Authority
- CN
- China
- Prior art keywords
- fin
- interarea
- semiconductor material
- silicon
- fins
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/222,629 | 2014-03-22 | ||
US14/222,629 US20150206965A1 (en) | 2013-11-14 | 2014-03-22 | High performance finfet |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104934478A CN104934478A (zh) | 2015-09-23 |
CN104934478B true CN104934478B (zh) | 2019-02-19 |
Family
ID=54121559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510204265.8A Active CN104934478B (zh) | 2014-03-22 | 2015-03-20 | 高性能的鳍式场效应晶体管 |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101738510B1 (ko) |
CN (1) | CN104934478B (ko) |
TW (1) | TWI549295B (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170179127A1 (en) * | 2015-12-18 | 2017-06-22 | Globalfoundries Inc. | Semiconductor structure having silicon germanium fins and method of fabricating same |
US9825036B2 (en) | 2016-02-23 | 2017-11-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and method for semiconductor device |
TWI622171B (zh) * | 2016-06-24 | 2018-04-21 | 財團法人國家實驗研究院 | 異質整合半導體裝置及其製造方法 |
US10134893B2 (en) * | 2017-02-22 | 2018-11-20 | International Business Machines Corporation | Fabrication of a vertical field effect transistor device with a modified vertical fin geometry |
CN110571195B (zh) * | 2018-06-05 | 2021-12-21 | 中芯国际集成电路制造(上海)有限公司 | 一种sram及其制造方法和电子装置 |
US10699967B2 (en) | 2018-06-28 | 2020-06-30 | International Business Machines Corporation | Co-integration of high carrier mobility PFET and NFET devices on the same substrate using low temperature condensation |
KR102603500B1 (ko) | 2018-10-26 | 2023-11-17 | 한온시스템 주식회사 | 차량용 공조장치 |
KR20220099645A (ko) | 2021-01-07 | 2022-07-14 | 한온시스템 주식회사 | 차량용 공조장치 |
US20230031490A1 (en) * | 2021-07-30 | 2023-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained nanosheets on silicon-on-insulator substrate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7449753B2 (en) * | 2006-04-10 | 2008-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Write margin improvement for SRAM cells with SiGe stressors |
JP5431372B2 (ja) * | 2011-01-05 | 2014-03-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN102956453B (zh) * | 2011-08-19 | 2017-02-22 | 联华电子股份有限公司 | 半导体装置及其制作方法 |
US20130075818A1 (en) * | 2011-09-23 | 2013-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D Semiconductor Device and Method of Manufacturing Same |
US9012286B2 (en) * | 2012-04-12 | 2015-04-21 | Globalfoundries Inc. | Methods of forming FinFET semiconductor devices so as to tune the threshold voltage of such devices |
US9728464B2 (en) * | 2012-07-27 | 2017-08-08 | Intel Corporation | Self-aligned 3-D epitaxial structures for MOS device fabrication |
-
2015
- 2015-03-20 KR KR1020150039175A patent/KR101738510B1/ko active IP Right Grant
- 2015-03-20 TW TW104108917A patent/TWI549295B/zh not_active IP Right Cessation
- 2015-03-20 CN CN201510204265.8A patent/CN104934478B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR101738510B1 (ko) | 2017-05-22 |
TWI549295B (zh) | 2016-09-11 |
CN104934478A (zh) | 2015-09-23 |
KR20150110404A (ko) | 2015-10-02 |
TW201541638A (zh) | 2015-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104934478B (zh) | 高性能的鳍式场效应晶体管 | |
US9287357B2 (en) | Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same | |
TWI658592B (zh) | 熱離子-過驅動穿隧場效應電晶體及其製造與操作方法 | |
US9502531B2 (en) | Semiconductor device having fin-type field effect transistor and method of manufacturing the same | |
US9461114B2 (en) | Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same | |
US9947788B2 (en) | Device with diffusion blocking layer in source/drain region | |
US9117893B1 (en) | Tunneling transistor suitable for low voltage operation | |
CN102640269B (zh) | 电子装置和系统及其制造和使用方法 | |
US7808051B2 (en) | Standard cell without OD space effect in Y-direction | |
US20170053917A1 (en) | Semiconductor device | |
CN107017257A (zh) | 具有垂直fet器件的静态随机存取存储器件 | |
US10177157B2 (en) | Transistor structure having multiple n-type and/or p-type elongated regions intersecting under common gate | |
US20150206965A1 (en) | High performance finfet | |
US10607992B2 (en) | Semiconductor device and method of forming the semiconductor device | |
US11107888B2 (en) | Method for manufacturing semiconductor device | |
CN105489495A (zh) | 隧穿场效应晶体管以及制造此类晶体管的方法 | |
US9466703B2 (en) | Method for fabricating semiconductor device | |
CN106653756A (zh) | 静态随机存取存储器 | |
TW201029179A (en) | Techniques for improving transistor-to-transistor stress uniformity | |
Hossain et al. | TCAD based performance analysis of junctionless cylindrical double gate all around FET up to 5nm technology node | |
US10332891B1 (en) | Method and device to reduce finFET SRAM contact resistance | |
CN103700631A (zh) | 无结mos fet器件的制备方法 | |
US9842932B1 (en) | FinFET with P/N stacked fins and method for fabricating the same | |
Quader et al. | Channel engineered cylindrical double gate all around FET for low power VLSI applications | |
CN108767011A (zh) | 一种双栅mosfet结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |