CN104934442A - 阵列基板及其制作方法、显示面板及显示装置 - Google Patents

阵列基板及其制作方法、显示面板及显示装置 Download PDF

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CN104934442A
CN104934442A CN201510216868.XA CN201510216868A CN104934442A CN 104934442 A CN104934442 A CN 104934442A CN 201510216868 A CN201510216868 A CN 201510216868A CN 104934442 A CN104934442 A CN 104934442A
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photoresist
array base
base palte
conductive metal
metal pattern
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CN104934442B (zh
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汪建国
刘圣烈
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BOE Technology Group Co Ltd
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Abstract

本发明提供了一种阵列基板及其制作方法、显示面板及显示装置，属于显示技术领域。其中，所述阵列基板的导电金属图形上覆盖有阻氧薄膜。本发明的技术方案能够防止阵列基板上的导电金属被氧化腐蚀，提高阵列基板的性能和良率。

Description

阵列基板及其制作方法、显示面板及显示装置
技术领域
本发明涉及显示技术领域，特别是指一种阵列基板及其制作方法、显示面板及显示装置。
背景技术
随着TFT(薄膜晶体管)产业的进步及工艺的改善，液晶显示器件已被应用到越来越多的平板显示产品当中，包括手机、数码相机、平板电脑、笔记本电脑、及液晶电视等，其优良的显示特性已被越来越多的用户所推崇，市场竞争力很强。
随着液晶显示技术的发展，液晶显示装置朝着大尺寸、高解析度以及低成本的方向发展。随着大尺寸技术的发展，阻抗效应的影响越来越大。为解决这个问题，低电阻材料如Cu金属被引进来降低走线电阻，但其容易氧化、良率低且容易扩散的特性，极大的限制了其应用。
发明内容
本发明要解决的技术问题是提供一种阵列基板及其制作方法、显示面板及显示装置，能够防止阵列基板上的导电金属被氧化腐蚀，提高阵列基板的性能和良率。
为解决上述技术问题，本发明的实施例提供技术方案如下：
一方面，提供一种阵列基板，所述阵列基板的导电金属图形上覆盖有阻氧薄膜。
进一步地，所述导电金属图形为源电极、漏电极和数据线。
进一步地，所述阻氧薄膜覆盖所述导电金属图形的上表面及斜侧面。
进一步地，所述导电金属图形的材料为Cu或Al、Mo、W中的至少一种与Cu的合金。
进一步地，所述阻氧薄膜为a-Si薄膜。
进一步地，所述a-Si薄膜的厚度为100-180nm。
进一步地，所述阵列基板还包括：
位于覆盖有所述阻氧薄膜的导电金属图形上的钝化层。
本发明实施例还提供了一种显示面板，包括上述的阵列基板。
本发明实施例还提供了一种显示装置，包括上述的显示面板。
本发明实施例还提供了一种上述阵列基板的制作方法，在形成导电金属图形之后，形成覆盖所述导电金属图形的阻氧薄膜。
本发明的实施例具有以下有益效果：
上述方案中，阵列基板的导电金属图形上覆盖有阻氧薄膜，该阻氧薄膜能够对导电金属图形进行保护，防止氧化性气体作用到导电金属图形上。这样在阵列基板的制作过程中，形成导电金属图形之后，在进行富含O2或N2O等氧化性气体的工艺中，能够避免氧化性气体对导电金属图形造成的氧化腐蚀，保证导电金属图形的导电性能，同时还能避免导电金属的扩散，提高阵列基板的性能和良率。
附图说明
图1为本发明实施例在衬底基板上形成公共电极后的截面示意图；
图2为本发明实施例形成栅电极、栅线和公共电极线后的截面示意图；
图3为本发明实施例形成栅绝缘层和有源层后的截面示意图；
图4为本发明实施例形成刻蚀阻挡层后的截面示意图；
图5为本发明实施例形成源电极、漏电极和数据线后的截面示意图；
图6为本发明实施例形成a-Si薄膜后的截面示意图；
图7为本发明实施例形成钝化层后的截面示意图；
图8为本发明实施例形成像素电极后的截面示意图。
附图标记
1衬底基板   2公共电极  3栅金属层  4栅绝缘层
5有源层     6刻蚀阻挡层 7源漏金属层  8a-Si薄膜
9钝化层     10像素电极
具体实施方式
为使本发明的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
本发明的实施例针对现有技术中Cu金属容易氧化且容易扩散，影响阵列基板的性能的问题，提供一种阵列基板及其制作方法、显示面板及显示装置，能够防止阵列基板上的导电金属被氧化腐蚀，提高阵列基板的性能和良率。
本发明实施例提供了一种阵列基板，所述阵列基板的导电金属图形上覆盖有阻氧薄膜。该阻氧薄膜能够对导电金属图形进行保护，防止氧化性气体作用到导电金属图形上。这样在阵列基板的制作过程中，形成导电金属图形之后，在进行富含O2或N2O等氧化性气体的工艺中，能够避免氧化性气体对导电金属图形造成的氧化腐蚀，保证导电金属图形的导电性能，同时还能避免导电金属的扩散，提高阵列基板的性能和良率。
具体地，所述导电金属图形为源电极、漏电极和数据线。
优选地，所述阻氧薄膜覆盖所述导电金属图形的上表面及斜侧面，这样能够完全覆盖导电金属图形。
进一步地，所述导电金属图形的材料为Cu或Al、Mo、W中的至少一种与Cu的合金。采用Cu基的低电阻金属制作导电金属图形，可以有效降低导电金属图形的电阻，提高导电金属图形的导电性能。
具体地，所述阻氧薄膜为a-Si薄膜。所述a-Si薄膜的厚度优选为100-180nm，这样既可以有效地对导电金属图形进行保护，又可以避免对阵列基板的段差以及其他膜层造成影响。
进一步地，所述阵列基板还包括：
位于覆盖有所述阻氧薄膜的导电金属图形上的钝化层。形成钝化层的工艺需要在富含O2或N2O等氧化性气体的环境中进行，这时阻氧薄膜能够对导电金属图形进行保护，避免氧化性气体对导电金属图形造成的氧化腐蚀，保证导电金属图形的导电性能。
本发明实施例还提供了一种显示面板，包括上述阵列基板。
本发明实施例还提供了一种显示装置，包括上述显示面板。所述显示装置可以为：液晶面板、液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。
本发明实施例还提供了一种上述阵列基板的制作方法，在形成导电金属图形之后，形成覆盖所述导电金属图形的阻氧薄膜。
本发明的阵列基板可以为水平电场型的阵列基板，还可以为垂直电场型的阵列基板，下面以ADS(高级超维场转换)模式的阵列基板为例，结合附图对本发明的阵列基板及其制作方法进行进一步地介绍：
本实施例的阵列基板的制作方法包括以下步骤：
步骤1：如图1所示，提供一衬底基板1，该衬底基板可为玻璃基板或石英基板。具体地，可以采用磁控溅射、热蒸发或其它成膜方法在经清洗后洁净无杂质的衬底基板1上沉积厚度为30-50nm的透明导电层，透明导电层可以是ITO、IZO或AZO。在透明导电层上涂敷一层光刻胶；采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于公共电极2的图形，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的透明导电层，剥离剩余的光刻胶，形成公共电极2。
步骤2：如图2所示，在完成步骤1的衬底基板1上采用溅射或热蒸发的方法沉积一层厚度为200-400nm的栅金属层3，栅金属层3可以采用Cu、Cu/Mo、Cu/Ti、Cu/MoW、Cu/MoNb、Cu/MoTi等Cu基的低电阻金属，栅金属层3可以为单层结构或者多层结构。在栅金属层3上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于栅电极、栅线、公共电极线所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的栅金属薄膜，剥离剩余的光刻胶，形成栅电极、栅线、公共电极线，公共电极线与公共电极2连接。
步骤3：如图3所示，可以采用等离子体增强化学气相沉积(PECVD)方法，在完成步骤2的衬底基板1上沉积厚度为200-400nm的栅绝缘层4，其中，栅绝缘层材料可以选用氧化物、氮化物或者氮氧化物，栅绝缘层可以为单层、双层或多层结构。具体地，栅绝缘层材料可以是SiNx，SiOx或Si(ON)x。
之后采用磁控溅射、热蒸发或其它成膜方法沉积一层厚度为30nm-50nm的有源层5，有源层材料可以选用IGZO、ZnO、InO、ITZO或IAZO。在有源层5上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于有源层5的图形所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的有源层5，剥离剩余的光刻胶，形成有源层5的图形。
步骤4：如图4所示，在完成步骤3的衬底基板1上采用磁控溅射、热蒸发、PECVD或其它成膜方法沉积一层厚度为100-200nm的刻蚀阻挡层6，其中，刻蚀阻挡层材料可以选用氧化物、氮化物或氮氧化物，刻蚀阻挡层可以是单层结构，也可以是采用氮化硅和氧化硅构成的两层结构。具体地，刻蚀阻挡层材料可以是SiO。在刻蚀阻挡层6上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶未保留区域对应于刻蚀阻挡层6的第一过孔所在区域，光刻胶保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的刻蚀阻挡层6，剥离剩余的光刻胶，形成包括有第一过孔的刻蚀阻挡层6的图形。
步骤5：如图5所示，在完成步骤4的衬底基板1上采用磁控溅射、热蒸发或其它成膜方法沉积一层厚度为200-300nm的源漏金属层7，源漏金属层7可以采用Cu、Cu/Mo、Cu/Ti、Cu/MoW、Cu/MoNb、Cu/MoTi等Cu基的低电阻金属，源漏金属层7可以为单层结构或者多层结构。在源漏金属层7上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于源电极、漏电极、数据线所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的源漏金属薄膜，剥离剩余的光刻胶，形成源电极、漏电极、数据线，源电极和漏电极分别通过刻蚀阻挡层6的第一过孔与有源层5连接。
步骤6：如图6所示，在经过步骤5的衬底基板1上沉积一层较薄的a-Si薄膜8,具体地，a-Si薄膜8可以为厚度为100-180nm的非氢化a-Si薄膜，在a-Si薄膜8上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于a-Si薄膜8的图形所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的a-Si薄膜8，剥离剩余的光刻胶，形成a-Si薄膜8的图形，a-Si薄膜8的图形能够完全盖住数据线、源电极和漏电极，包括数据线、源电极和漏电极的上表面及斜侧面。
步骤7：如图7所示，具体地，在经过步骤6的衬底基板1上采用磁控溅射、热蒸发、PECVD或其它成膜方法沉积一层钝化层9，其中，钝化层材料可以选用氧化物、氮化物或氮氧化物，钝化层9可以是单层结构，也可以是采用氮化硅和氧化硅构成的两层结构。具体地，钝化层9可以是SiO/SiON的两层结构。在钝化层9上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶未保留区域对应于钝化层9的第二过孔所在区域，光刻胶保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的钝化层9及下面的a-Si薄膜8，剥离剩余的光刻胶，形成包括有第二过孔的钝化层9的图形，该第二过孔贯穿钝化层9和a-Si薄膜8。
步骤8：如图8所示，在经过步骤7的衬底基板1上采用磁控溅射、热蒸发或其它成膜方法沉积厚度为30-50nm的透明导电层，透明导电层可以是ITO、IZO或AZO。在透明导电层上涂敷一层光刻胶；采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于像素电极10的图形，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的透明导电层，剥离剩余的光刻胶，形成像素电极10，像素电极10通过钝化层9的第二过孔与漏电极连接。
经过上述步骤即可得到如图8所示的阵列基板，本实施例的阵列基板的源电极、漏电极和数据线采用Cu基的低电阻金属制成，可以提高源电极、漏电极和数据线的导电性能，源电极、漏电极和数据线上覆盖有a-Si薄膜，a-Si薄膜能够对源电极、漏电极和数据线进行保护，防止氧化性气体作用到源电极、漏电极和数据线上。这样在富含O2或N2O等氧化性气体的环境中形成钝化层时，能够避免氧化性气体与源电极、漏电极和数据线接触，保证源电极、漏电极和数据线的表面及侧面都不会被氧化腐蚀，进而保证源电极、漏电极和数据线的导电性能，同时还能避免Cu基金属的扩散，从而提高了阵列基板的性能和良率。另外，在形成钝化层的第二过孔时，第二过孔处的a-Si薄膜也会被刻蚀掉，因此不会影响像素电极与漏电极的连接。
上述实施例以ESL(刻蚀阻挡层)结构ADS模式的阵列基板为例说明本发明的技术方案，但本发明的技术方案并不仅适用于ADS模式的阵列基板中，本发明的技术方案同样适用于低温多晶硅薄膜晶体管阵列基板以及BCE(背沟道刻蚀)结构的氧化物薄膜晶体管阵列基板中。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

1.一种阵列基板，其特征在于，所述阵列基板的导电金属图形上覆盖有阻氧薄膜。
2.根据权利要求1所述的阵列基板，其特征在于，所述导电金属图形为源电极、漏电极和数据线。
3.根据权利要求1所述的阵列基板，其特征在于，所述阻氧薄膜覆盖所述导电金属图形的上表面及斜侧面。
4.根据权利要求1所述的阵列基板，其特征在于，所述导电金属图形的材料为Cu或Al、Mo、W中的至少一种与Cu的合金。
5.根据权利要求1-4中任一项所述的阵列基板，其特征在于，所述阻氧薄膜为a-Si薄膜。
6.根据权利要求5所述的阵列基板，其特征在于，所述a-Si薄膜的厚度为100-180nm。
7.根据权利要求1-4中任一项所述的阵列基板，其特征在于，所述阵列基板还包括：
位于覆盖有所述阻氧薄膜的导电金属图形上的钝化层。
8.一种显示面板，其特征在于，包括如权利要求1-7中任一项所述的阵列基板。
9.一种显示装置，其特征在于，包括如权利要求8所述的显示面板。
10.一种如权利要求1-7中任一项所述的阵列基板的制作方法，其特征在于，在形成导电金属图形之后，形成覆盖所述导电金属图形的阻氧薄膜。
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