CN104838473A - Ⅲ族氮化物半导体层积体 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 219
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 213
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 230000007547 defect Effects 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 15
- 239000010980 sapphire Substances 0.000 claims description 15
- 230000002265 prevention Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 28
- 239000013078 crystal Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004581 coalescence Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010612 desalination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000026267 regulation of growth Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
本公开涉及一种Ⅲ族氮化物半导体层积体,其特征在于,包含:m面基板;位于m面基板上且具有多个窗口的生长防止区域,所述多个窗口用于生长Ⅲ族氮化物半导体;至少在相当于多个窗口的区域中形成在m面基板上的种子层;和,从种子层生长并向a轴方向和c轴方向展开并合并(coalescence)的Ⅲ族氮化物半导体层,所述Ⅲ族氮化物半导体层是,在一个窗口上向c轴方向展开的Ⅲ族氮化物半导体向生长防止区域上部展开并和邻接的窗口上向a轴方向展开的Ⅲ族氮化物半导体形成空洞(Cavity)的Ⅲ族氮化物半导体层。
Description
技术领域
本公开(Disclosure)整体为涉及Ⅲ族氮化物半导体层积体,特别是具备空洞(Cavtiy)的Ⅲ族氮化物半导体层积体。
在此,Ⅲ族氮化物半导体意味着由Al(X)Ga(y)In(1-x-y)N(0≤x≤1,0≤y≤1,0≤x+y≤1)构成的化合物半导体层,可用于如发光二极管的发光元件和如光电二极管的受光元件的制造,除了光元件,还可适用于二极管、晶体管和电子元件的制造等多种领域。
背景技术
在此提供关于本公开的背景技术,但这并不意味是现有技术(This section providesbackground information related to the present disclosure which is not necessarily priorart)。
图1是表示美国公开专利第2003-005744号中记载的Ⅲ族氮化物半导体发光元件的一例的图,此Ⅲ族氮化物半导体发光元件包含基板100,基板100上生长的n型Ⅲ族氮化物半导体层300、n型Ⅲ族氮化物半导体层300上生长的活性层400和活性层400上生长的p型Ⅲ族氮化物半导体层500。基板100上形成有突起110,突起110可提高基板100上生长的Ⅲ族氮化物半导体层300、400、500的晶体质量(GrowthQuality),同时可作为散射面,所述散射面可提高向发光元件外部发出活性层400上形成的光的效率。
图2和图3是表示国际公开专利第2010-110608号中记载的Ⅲ族氮化物半导体发光元件的一例的图,此Ⅲ族氮化物半导体发光元件包含基板100,基板100上生长的n型Ⅲ族氮化物半导体层300,n型Ⅲ族氮化物半导体层300上生长的活性层400和活性层400上生长的p型Ⅲ族氮化物半导体层500。基板100上形成有突起120,突起120的上表面上生长Ⅲ族氮化物半导体层300、400、500来形成空洞(Cavity)130。比起利用Ⅲ族氮化物半导体层300、400、500和基板100(蓝宝石基板的情况下折射率大约是1.7)之间的散射面的情况,利用空洞130(空气的折射率是1)是可提高散射的效果的技术。但是,如图3所示,突起120上实际生长的Ⅲ族氮化物半导体层300、400、500与期待的不同,止步于形成具有很小曲率的散射面131。一方面,除了将如此形成的空洞130利用为散射面,也可利用为用湿式蚀刻使基板100和Ⅲ族氮化物半导体层300、400、500分离时可投入蚀刻液的通道,激光剥离(Laser Lift-off)时减少因激光引起的分割面,通过将空洞使用为激光剥离时发生的气体的移动通路而减少Ⅲ族氮化物半导体层300、400、500收到的冲击。
图4是表示美国公开专利第2005-0156175号记载的Ⅲ族氮化物半导体层积体的一例的图,Ⅲ族氮化物半导体层积体包含c面蓝宝石基板100,c面蓝宝石基板100上预形成的Ⅲ族氮化物半导体样板210,Ⅲ族氮化物半导体样板210上预形成的生长防止膜150(其由SiO2组成),和在生长防止膜上选择性生长(selectively grown)的Ⅲ族氮化物半导体层310。现有技术中,Ⅲ族氮化物半导体样板210是通过c面蓝宝石基板上生长Ⅲ族氮化物半导体的方法来形成的。即,在550℃附近的生长温度和氢气气氛下,形成种子层,然后在1050℃生长温度下通过生长GaN的方法而形成为1~3μm的厚度。附图标记180表示了缺陷(Defecsts),生长防止膜150下部缺陷的展开被阻止,整体上带来了结晶性的提高。但是此方法中,生长防止膜150形成前需要Ⅲ族氮化物半导体样板210的生长,会带来因Ⅲ族氮化物半导体样板210和c面蓝宝石基板100之间的晶格常数和膨胀系数差异而引起的基板弯曲(Bowing)现象。此基板弯曲现象会妨碍以后生长防止膜150形成所需的光刻(Photolithography)过程,很难在通常具有2英寸、4英寸、6英寸、8英寸直径的c面蓝宝石基板100上均一地进行上述过程。m面基板上试图进行此过程的有P.de Mierryd等的论文(Improved Semipolar(11-22)GaNquality using asymmetric lateral epitaxy,Applied Physics Letters 94,191903(2009))。
图5是表示美国公开专利第2005-0156175号记载的Ⅲ族氮化物半导体层积体的另外一例的图,Ⅲ族氮化物半导体层积体包含:c面蓝宝石基板100、在c面蓝宝石基板100上形成的生长防止膜150,其由SiO2组成;和在生长防止膜上选择性生长(selectively grown)的Ⅲ族氮化物半导体层310。1050℃程度上生长的Ⅲ族氮化物半导体层310无法在c面蓝宝石基板110和生长防止膜150上生长,与图4的Ⅲ族氮化物半导体样板210相同地,在550℃的生长温度上要先形成种子层200(通常称为缓冲层)。但是,如此在比Ⅲ族氮化物半导体的实际生长温度(GaN的情况下通常是1000℃以上)低很多的温度下形成种子层200的话,生长防止膜150上也会形成组成种子层200的物质(主要为GaN)的多晶,会有很难形成结晶性优异的Ⅲ族氮化物半导体层310的问题。
发明内容
技术课题
对此会在“具体实施方式”的后面叙述。
课题解决手段
在此,会提供本公开的整体概要(Summary),但不应被理解为限制了本公开的外延(This section provides a general summary of the disclosure and is not a comprehensivedisclosure of its full scope or all of its features)。
根据本公开的一方面(According to one aspect of the present disclosure),提供Ⅲ族氮化物半导体层积体,其特征在于,包含:m面基板;位于m面基板上且具有多个窗口的生长防止区域,所述多个窗口是用于生长Ⅲ族氮化物半导体;至少在相当于多个窗口的区域中形成在m面基板上的种子层;和,从种子层生长并向a轴方向和c轴方向展开并合并(coalescence)的Ⅲ族氮化物半导体层,所述Ⅲ族氮化物半导体层是,在一个窗口上向c轴方向展开的Ⅲ族氮化物半导体向生长防止区域上部展开并和在邻接的窗口上向a轴方向展开的Ⅲ族氮化物半导体形成空洞(Cavity)的Ⅲ族氮化物半导体层。
发明效果
对此会在“具体实施方式”的后面叙述。
附图说明
图1是表示美国公开专利第2003-005744号中记载的Ⅲ族氮化物半导体发光元件的一例的图。
图2和图3是表示国际公开专利第2010-110608号中记载的Ⅲ族氮化物半导体发光元件的一例的图。
图4是表示美国公开专利第2005-0156175号记载的Ⅲ族氮化物半导体层积体的一例的图。
图5是表示美国公开专利第2005-0156175号记载的Ⅲ族氮化物半导体层积体的另外一例的图。
图6是表示根据本公开的Ⅲ族氮化物半导体层积体的一例的图。
图7是表示根据本公开的种子层上生长Ⅲ族氮化物半导体的方法中的一例的图。
图8是表示根据本公开的种子层上生长Ⅲ族氮化物半导体的方法的另外一例的图。
图9是表示根据本公开的Ⅲ族氮化物半导体层积体的另外一例的图。
图10是表示根据本公开的Ⅲ族氮化物半导体层积体的又一例的图。
图11是表示根据本公开的Ⅲ族氮化物半导体层积体的又一例的图。
图12是以图8的结构生长的图6的Ⅲ族氮化物半导体层积体的多个横截面图像。
图13是以图8的结构生长的图6的Ⅲ族氮化物半导体层积体的多个横截面图像。
图14是表示在低温下生长的种子层以及在氢气氛围下生长的种子层的图。
图15是表示根据本公开生长的种子层的照片。
图16和图17是说明根据本公开的生长Ⅲ族氮化物半导体方法中的一例的图。
具体实施方式
以下,参照本公开的附图进行详细说明(The present disclosure will now bedescribed in detail with reference to the accompanying drawing(s))。
图6是表示根据本公开的Ⅲ族氮化物半导体层积体的一例的图,所述Ⅲ族氮化物半导体层积体包含:m面基板10;位于m面基板100上且具有多个窗口16a、16b的生长防止膜15,所述多个窗口是用于生长Ⅲ族氮化物半导体;在相当于多个窗口16a、16b的区域中形成在m面基板10上的种子层20;和,作为从种子层20生长并向a轴方向和c轴方向展开并合并(coalescence)的Ⅲ族氮化物半导体层31;所述Ⅲ族氮化物半导体层是,在一个窗口16a上向c轴方向展开的Ⅲ族氮化物半导体31a向生长防止膜上部展开并和在邻接的窗口16b上向a轴方向展开的Ⅲ族氮化物半导体31b形成空洞13(Cavity)的Ⅲ族氮化物半导体层31。
m面基板的代表性物质是六方晶系蓝宝石,将c面作为0001时,m面是1-100,a面是11-20。在此,a轴定义为垂直于a面的轴,c轴定义为垂直于c面的轴。优选使用准确的m面基板,但也可以使用从m面以稍微off的角切开的基板,在此统称为m面基板10。除了蓝宝石,也可生长有Ⅲ族氮化物半导体(例如:GaN,InGaN,AlGaN,InN,AlN,InGaAlN),只要是具有m面的物质的面,就都可使用。Ⅲ族氮化物半导体中也可掺杂Si,Mg等物质。
作为生长防止膜15,主要使用SiO2,但也可使用SiNx、TiO2,此外,只要是能防止Ⅲ族氮化物半导体生长的物质,任意物质都可以被使用。另外生长防止膜15可形成为SiO2/TiO2的DBR结构。例如,可使用100nm~300nm厚度的SiO2膜。生长防止膜15是可向m面蓝宝石基板的a面方向以条纹(stripe)形成,并且生长防止膜15和窗口16a之间的间距可适当调节。本发明人使用17:1、16:2、13:1、14:2、7:3、6:2的面罩(单位是um)来实验了生长防止膜15和窗口16a之间的间距,生长防止膜15在最宽的17um的情况下,Ⅲ族氮化物半导体层31(GaN)在7um以下形成为平坦化(即,空洞13的高度是7um以下)。根据本公开的Ⅲ族氮化物半导体生长方法,过高的高度(如10um)之前可平坦化Ⅲ族氮化物半导体层31。
种子层20(例如:GaN)不同于现有的500℃附近(例如:550℃)形成的GaN缓冲层,是在650℃以上的高温,优选800℃以上的温度下形成,但在1150℃以上的温度下一般不会很好地形成。在800℃以上的温度下可形成更好的种子层200,但为了能快速移到更高温度下生长的Ⅲ族氮化物半导体层的生长条件,可在900℃以上的温度下生长,从此观点考虑,优选在900℃以上的温度下生长。另外,作为载气,不用现有使用的H2,而使用N2。如前所述,使用如现有的缓冲层的方式的话,生长防止膜15上会形成多晶,很难得到结晶性优异的Ⅲ族氮化物半导体层31。由此可知,本实施例的种子层20与现有Ⅲ族氮化物半导体层的生长中使用的缓冲层相比,形成的概念是不同的。图14是在表示在低温下生长的种子层以及在氢气氛围下生长的种子层的图,如(a)所示,在低温下生长的情况下,多晶连生长防止膜也覆盖,如(b)所示,在高温氢气氛围中生长的情况下,生长较难,会形成一部分很大的晶核。图15是表示根据本公开生长的种子层的照片,可知道只在窗口16a上形成有种子层20。由于种子层的生长可在窄的窗口16a区域中形成,因此,如果使用没有生长防止膜15的状态下的生长条件,则有可能种子层20过快地形成于窗口16a上,因此根据窗口16a的大小来调节生长速度。种子层20是由Al(x)Ga(y)In(1-x-y)N(0=x=1,0=y=1,0=x+y=1)构成的化合物半导体形成,优选由GaN形成。图15中种子层20的生长条件如下。有机洗净m面蓝宝石基板后,使用PECVD方法镀敷SiO2,然后利用MOCVD来生长。将MOCVD反应器内的氛围气体作为N2后,NH3流量设定为8000sccm(StandardCubic Cm per Min)注入反应器中,从450℃升温到1050℃。这是为了蓝宝石表面的淡化处理而进行的。在1050℃下利用TMGa使GaN核以0.5nm/sec的速度生长。此时反应器的压力设定为100mbar。
图7是表示根据本公开的种子层上生长Ⅲ族氮化物半导体的方法中的一例的图,说明Ⅲ族氮化物半导体31a和Ⅲ族氮化物半导体31b达到接合的过程的一例。如图7左侧所示,m面基板10的种子层20上生长的Ⅲ族氮化物半导体31e是以顺时针方向,生长为具备c面、a面和-c面。根据生长条件,可拓宽某一面或省略某一面,但基本上,向a轴方向的横向展开与c轴方向的横向展开相比,相对地被抑制的。如中间图所示,结晶缺陷32(准确说是层积缺陷(stacking faults))是向a轴方向展开。由此,窗口16a上生长的Ⅲ族氮化物半导体31a和与其邻接的窗口16b上生长的Ⅲ族氮化物半导体31b是向a轴方向展开,一直到两者接合的地点33,使结晶缺陷32的形成的区域n向c轴方向展开,使区域n形成为比没有形成有结晶缺陷32的区域m窄,因此Ⅲ族氮化物半导体31a、31b整体上可减少结晶缺陷。为了接合,向a轴方向展开的Ⅲ族氮化物半导体31a、31b的a面是渐渐减少,最佳是形成为点接合,可有助于向a轴方向展开的Ⅲ族氮化物半导体31b和向c轴方向展开的Ⅲ族氮化物半导体31a的接合和平坦化。若Ⅲ族氮化物半导体31b的-c面和Ⅲ族氮化物半导体31a的c面相接在接合地点33上的话,两者很难接合,或形成为平行生长而无法接合。优选地,Ⅲ族氮化物半导体31a、31b中,向c轴方向展开的Ⅲ族氮化物半导体的横向生长展开要比向a轴方向展开的Ⅲ族氮化物半导体的横向生长展开快,使向生长防止区域上部生长展开的副Ⅲ族氮化物半导体块31f、31g和/或具备a面和c面的Ⅲ族氮化物半导体块31f、31g预形成后再生长。从生长初期,制造逆转梯形形状的Ⅲ族氮化物半导体情况下,随着达到接合地点33,由于半导体高度会变得太高,因此提前在生长防止膜15上形成展开的副Ⅲ族氮化物半导体块31f、31g也是较佳的。另外,因不易于以逆转梯形接合Ⅲ族氮化物半导体31a、31b,为了制成此种形状的预形状,优选提前形成副Ⅲ族氮化物半导体块31f、31g。如前所述,根据本公开的Ⅲ族氮化物半导体的生长方法,生长防止膜15和窗口16a的宽设定为17:1的情况下,可在Ⅲ族氮化物半导体层31厚度在7μm以下合并(coalescence),在此,副Ⅲ族氮化物半导体块31f、31g是达到此目的的有用的工具的一种。生长种子层20后,将氛围气体改为氢气。然后以NH3流量4000sccm、压力100mbar、温度1050℃、生长速度是以0.6nm/sec的速度来生长500nm~1300nm程度的副Ⅲ族氮化物半导体块31f、31g。此后,温度降为920℃,然后以压力250mbar、NH3流量12000sccm的条件生长。例如,将副Ⅲ族氮化物半导体块31f、31g生长为500nm,制成如图7所示结构,使区域n具有整个表面的5%程度的面积,可显著减少结晶缺陷。另外,生长副Ⅲ族氮化物半导体块31f、31g为1300nm来制成图8所述的结构(后面会描述),这样可阻止结晶缺陷32破开表面出来。相比较两层的生长条件,若副Ⅲ族氮化物半导体块31f、31g在相对低压高温条件下生长的话,相对于副Ⅲ族氮化物半导体块31f、31g生长后的Ⅲ族氮化物半导体31a、31b情况,呈现出对于温度相对不敏感的生长。
图8是表示根据本公开的种子层上生长Ⅲ族氮化物半导体的方法的另外一例的图,说明Ⅲ族氮化物半导体31a和Ⅲ族氮化物半导体31b达到接合的过程的另一例。向a轴方向展开的Ⅲ族氮化物半导体31b的结晶缺陷32是被Ⅲ族氮化物半导体31a阻止。相同地,随着接近接合完成的地点33,减少向c轴方向展开的Ⅲ族氮化物半导体31a的c面,最佳是形成为点接合,可有助于向a轴方向展开的Ⅲ族氮化物半导体31b和向c轴方向展开的Ⅲ族氮化物半导体31a的结合和平坦化,并阻止缺陷32的展开。
图9是表示根据本公开的Ⅲ族氮化物半导体层积体的另外一例的图,不同于图6所示的Ⅲ族氮化物半导体层积体,种子层20位于生长防止膜15和m面基板10之间。即,在形成生长防止膜15之前,种子层20提前形成。先形成半导体层的情况下,可能会有关联于图4而指出的问题,但通过限制种子层20的高度可解决此类问题。此实施例的情况下,种子层20可形成为现有的缓冲层。
图10是表示根据本公开的Ⅲ族氮化物半导体层积体的又一例的图,不同于图6所示的Ⅲ族氮化物半导体层积体,在Ⅲ族氮化物半导体31生长之前,先去除生长防止膜15。由此,没有种子层的m面基板10的区域15a可作用为生长防止区域。区域15a上没有种子层20,因此不会发生Ⅲ族氮化物半导体层31的生长。由此,Ⅲ族氮化物半导体层31从种子层20上如图6一样地生长。即,从窗口16a向c轴方向展开的Ⅲ族氮化物半导体31a向区域15a上部展开,且生长为和邻接窗口16b向a轴方向展开的Ⅲ族氮化物半导体31b一起形成空洞13(Cavity)。在生长Ⅲ族氮化物半导体层31之前,因去除了生长防止膜15,生长防止膜15上种子层20形成过程中形成多晶的情况下,也可以生长Ⅲ族氮化物半导体层31。
图11是表示根据本公开的Ⅲ族氮化物半导体层积体的又一例的图,Ⅲ族氮化物半导体层积体具备附加的生长防止膜17,附加的生长防止膜17上形成有空洞13。在种子层20上生长Ⅲ族氮化物半导体31一段时间后中断,为了露出向c轴方向展开的Ⅲ族氮化物半导体31c的面31d而再形成附加的生长防止膜17,从面31d、31d上生长Ⅲ族氮化物半导体31a和Ⅲ族氮化物半导体31b来形成空洞13。如前和如后所述,Ⅲ族氮化物半导体31c在生长防止膜15上的向c轴方向展开的区域是几乎没有缺陷的区域(参照图12),可大幅缩小在其上面形成的Ⅲ族氮化物半导体层31的结晶缺陷。
图12是以图8的结构生长的图6的Ⅲ族氮化物半导体层积体的多个横截面图像,右侧是STEM(Scanning Transmission Electronic Microscope)图像,左侧是TEM(Transmission Electronic Microscope)图像。在STEM图像中可知道,以接合面A为准,Ⅲ族氮化物半导体31b上展开的缺陷被Ⅲ族氮化物半导体31a所阻止,而且,Ⅲ族氮化物半导体31a,即向c轴方向展开的Ⅲ族氮化物半导体上几乎没有结晶缺陷。可将此特性利用在如图11所示的Ⅲ族氮化物半导体层积体的生长中。通过TEM图像,可更清楚地看到缺陷被阻断。
图13是以图8的结构生长的图6的Ⅲ族氮化物半导体层积体的多个横截面图像,(a)是CL(Cathod Luminescence)图像,(b)是SEM(Scanning Electron Microscope)图像,(c)是光学显微镜图像。CL图像中向右侧上方倾斜的像凹槽的为缺陷,可看出其无法再展开。SEM图像上空洞(Cavity)很好地显示出,其形成为横穿基板。空洞右侧上方看起来像缺陷的是切开横截面而产生的瑕疵。在光学显微镜图像中亮的一侧是空洞,因为表面很干净可看到Ⅲ族氮化物半导体层的内部。
图16和图17是说明根据本公开的生长Ⅲ族氮化物半导体方法中的一例的图,以Ⅲ族氮化物半导体311为准,Ⅲ族氮化物半导体312是将a面方向和c面方向的生长速度弄成相近,将他们的生长速度弄成比向11-22面方向的生长速度相对更快而可使其生长。Ⅲ族氮化物半导体313的生长速度是以11-22面方向>c面方向>a面方向的顺序调节而可使其生长。Ⅲ族氮化物半导体314的生长速度是以11-22面方向>a面方向>c面方向的顺序调节而可使其生长。Ⅲ族氮化物半导体315的生长速度是以c面方向>11-22面方向>a面方向的顺序调节,并且将c面方向的生长速度调节成稍稍快于11-22面方向的生长速度而可使其生长。Ⅲ族氮化物半导体316的生长速度是以c面方向>a面方向>11-22面方向的顺序调节,并且将c面方向的生长速度调节成稍稍快于a面方向的生长速度而可使其生长。图17表示了易于平坦化的、即具有11-22面的Ⅲ族氮化物半导体312、Ⅲ族氮化物半导体315和Ⅲ族氮化物半导体316的合并过程,Ⅲ族氮化物半导体315是在合并后也剩有c面,由此,知道Ⅲ族氮化物半导体312和Ⅲ族氮化物半导体316可在较低高度下平坦化。另外,形成Ⅲ族氮化物半导体312后,根据Ⅲ族氮化物半导体315的生长方法,即,如图7所示的区域n形成为比区域m窄之后,可阻断区域n。
根据本公开的另一种Ⅲ族氮化物半导体层积体,可形成为具备空洞的Ⅲ族氮化物半导体层积体。用Ⅲ族氮化物半导体层积体制造发光二极管的情况下,这空洞可作用为用于散射光的散射面。将此空洞构成为长通道形状,可通过湿式蚀刻或利用激光来容易分离基板和Ⅲ族氮化物半导体。特别是构成如图10形状的Ⅲ族氮化物半导体层积体的情况下,通过湿式蚀刻去除生长防止膜后,也可相同地容易分离。另外分离基板而露出的面是11-22面,其是能很好进行湿式蚀刻(wet etching)的面,因此与c面垂直结构LED相比,可易于制造出粗表面。
并且,根据本公开的另一种Ⅲ族氮化物半导体层积体,可在m面基板上生长结晶性优异的Ⅲ族氮化物半导体。
根据本公开,种子层的形成,副Ⅲ族氮化物半导体块的形成,Ⅲ族氮化物半导体的形成,Ⅲ族氮化物半导体的合并,空洞的形成,减少结晶缺陷的方法和在较低高度下平坦化的方法应被理解成它们个别地构成本公开的思想。即,某人将根据本公开的形成种子层的方法替代为其他方法来体现种子层的情况下,本领域技术人员应理解根据本公开的其他技术思想可个别和/或组合的形式结合在此其他种子层中。从此观点出发,本公开是涉及如下内容:
(1)形成有生长防止膜的m面基板上,形成种子层的方法和具备此种子层的Ⅲ族氮化物半导体层积体
(2)形成有生长防止膜的m面基板上合并或平坦化Ⅲ族氮化物半导体层的方法和利用此Ⅲ族氮化物半导体层的Ⅲ族氮化物半导体层积体
(3)形成有生长防止膜的m面基板上,生长结晶缺陷减少的Ⅲ族氮化物半导体的方法和利用此Ⅲ族氮化物半导体的Ⅲ族氮化物半导体层积体
(4)形成有生长防止膜的m面基板上,生长具备空洞的Ⅲ族氮化物半导体的方法和利用此Ⅲ族氮化物半导体的Ⅲ族氮化物半导体层积体,特别是,为了达到平坦化和形成空洞而不具有太厚厚度的形状和/或具备空洞且结晶缺陷减少的形状
(5)上述方法和层积体的组合
(6)上述方法,上述层积体,利用这些组合的元件。特别是,利用pn接合的半导体元件(例:垂直结构LED,关于图1至图4涉及的现有技术已记载的半导体元件)。
Claims (13)
1.一种Ⅲ族氮化物半导体层积体,其特征在于,包含:
m面基板;
位于m面基板上且具有多个窗口的生长防止区域,所述多个窗口是用于生长Ⅲ族氮化物半导体;
至少在相当于多个窗口的区域中形成在m面基板上的种子层;和,
从种子层生长并向a轴方向和c轴方向展开并合并的Ⅲ族氮化物半导体层,所述Ⅲ族氮化物半导体层是,在一个窗口上向c轴方向展开的Ⅲ族氮化物半导体向生长防止区域上部展开并和在邻接的窗口上向a轴方向展开的Ⅲ族氮化物半导体形成空洞的Ⅲ族氮化物半导体层。
2.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,生长防止区域具备生长防止膜。
3.如权利要求2所述的Ⅲ族氮化物半导体层积体,其特征在于,种子层位于生长防止区域和m面基板之间。
4.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,生长防止区域是未形成种子层的m面基板区域。
5.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,该Ⅲ族氮化物半导体层积体包含位于多个窗口上的附加的生长防止膜,
空洞形成在附加的生长防止膜上。
6.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,向a轴方向展开的Ⅲ族氮化物半导体的a面达到合并为止减少。
7.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,向a轴方向展开的Ⅲ族氮化物半导体的缺陷被向c轴方向展开的Ⅲ族氮化物半导体所阻断。
8.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,向c轴方向展开的Ⅲ族氮化物半导体的c面达到合并为止减少。
9.如权利要求6所述的Ⅲ族氮化物半导体层积体,其特征在于,向c轴方向展开的Ⅲ族氮化物半导体的c面达到合并为止减少。
10.如权利要求7所述的Ⅲ族氮化物半导体层积体,其特征在于,向c轴方向展开的Ⅲ族氮化物半导体的c面达到合并为止减少。
11.如权利要求1至10中任一项所述的Ⅲ族氮化物半导体层积体,其特征在于,
在一个窗口上生长的Ⅲ族氮化物半导体和在邻接的窗口上生长的Ⅲ族氮化物半导体各自向c轴方向展开的Ⅲ族氮化物半导体的横向生长展开要比向a轴方向展开的Ⅲ族氮化物半导体的横向生长展开快,使所述Ⅲ族氮化物半导体层积体具备向生长防止区域上部生长展开的副Ⅲ族氮化物半导体块。
12.如权利要求1所述的Ⅲ族氮化物半导体层积体,其特征在于,m面基板由蓝宝石构成。
13.如权利要求9所述的Ⅲ族氮化物半导体层积体,其特征在于,合并之后,向a轴方向展开的Ⅲ族氮化物半导体的缺陷被向c轴方向展开的Ⅲ族氮化物半导体所阻断。
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