CN104795343A - 衬底处理方法及其设备 - Google Patents
衬底处理方法及其设备 Download PDFInfo
- Publication number
- CN104795343A CN104795343A CN201410253690.1A CN201410253690A CN104795343A CN 104795343 A CN104795343 A CN 104795343A CN 201410253690 A CN201410253690 A CN 201410253690A CN 104795343 A CN104795343 A CN 104795343A
- Authority
- CN
- China
- Prior art keywords
- solvent
- substrate
- wafer
- ultra
- supercritical fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000003672 processing method Methods 0.000 title abstract 2
- 239000002904 solvent Substances 0.000 claims abstract description 265
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 51
- 239000012498 ultrapure water Substances 0.000 claims abstract description 51
- 239000012530 fluid Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims description 66
- 238000000352 supercritical drying Methods 0.000 claims description 31
- 238000009835 boiling Methods 0.000 claims description 26
- 125000001153 fluoro group Chemical group F* 0.000 claims description 25
- 230000001476 alcoholic effect Effects 0.000 claims description 14
- 150000001298 alcohols Chemical class 0.000 claims description 14
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical compound FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 111
- 239000007788 liquid Substances 0.000 description 68
- 229910052731 fluorine Inorganic materials 0.000 description 42
- 230000004907 flux Effects 0.000 description 37
- 239000011737 fluorine Substances 0.000 description 33
- 239000003960 organic solvent Substances 0.000 description 31
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 29
- 238000004140 cleaning Methods 0.000 description 21
- 239000000243 solution Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 14
- 238000001035 drying Methods 0.000 description 13
- 238000011084 recovery Methods 0.000 description 9
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 235000019994 cava Nutrition 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- -1 such as Substances 0.000 description 2
- 238000000194 supercritical-fluid extraction Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229960002163 hydrogen peroxide Drugs 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007595 memory recall Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014007134A JP5607269B1 (ja) | 2014-01-17 | 2014-01-17 | 基板処理方法及び装置 |
JP2014-007134 | 2014-01-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104795343A true CN104795343A (zh) | 2015-07-22 |
CN104795343B CN104795343B (zh) | 2018-12-04 |
Family
ID=51840516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410253690.1A Active CN104795343B (zh) | 2014-01-17 | 2014-06-09 | 衬底处理方法及其设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20150206773A1 (zh) |
JP (1) | JP5607269B1 (zh) |
KR (1) | KR101643455B1 (zh) |
CN (1) | CN104795343B (zh) |
TW (2) | TWI538997B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109790349A (zh) * | 2016-10-05 | 2019-05-21 | Agc株式会社 | 含有含氟聚合物的组合物和带含氟聚合物膜的基材的制造方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6104836B2 (ja) * | 2014-03-13 | 2017-03-29 | 東京エレクトロン株式会社 | 分離再生装置および基板処理装置 |
JP6443243B2 (ja) * | 2015-06-30 | 2018-12-26 | 東京エレクトロン株式会社 | 基板処理方法 |
JP6441176B2 (ja) * | 2015-07-10 | 2018-12-19 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
JP6498573B2 (ja) * | 2015-09-15 | 2019-04-10 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
JP6168128B2 (ja) * | 2015-11-11 | 2017-08-02 | セントラル硝子株式会社 | 基板の処理方法及びその方法に用いる溶剤 |
JP6742887B2 (ja) * | 2016-11-09 | 2020-08-19 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
KR102179716B1 (ko) * | 2019-04-24 | 2020-11-17 | 무진전자 주식회사 | 기판 건조 챔버 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003206497A (ja) * | 2002-01-11 | 2003-07-22 | Sony Corp | 洗浄及び乾燥方法 |
US20030183251A1 (en) * | 2001-04-24 | 2003-10-02 | Kabushiski Kaisha Kobe Seiko Sho | Process for drying an object having microstructure and the object obtained by the same |
US20120118332A1 (en) * | 2010-11-15 | 2012-05-17 | Yohei Sato | Supercritical drying method for semiconductor substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000003897A (ja) * | 1998-06-16 | 2000-01-07 | Sony Corp | 基板洗浄方法及び基板洗浄装置 |
JP2003179245A (ja) * | 2001-12-12 | 2003-06-27 | Sony Corp | 光発電器具およびその付属具および電気または電子機器 |
JP5843277B2 (ja) * | 2011-07-19 | 2016-01-13 | 株式会社東芝 | 半導体基板の超臨界乾燥方法及び装置 |
-
2014
- 2014-01-17 JP JP2014007134A patent/JP5607269B1/ja active Active
- 2014-03-07 US US14/200,672 patent/US20150206773A1/en not_active Abandoned
- 2014-06-02 KR KR1020140066819A patent/KR101643455B1/ko active IP Right Grant
- 2014-06-09 CN CN201410253690.1A patent/CN104795343B/zh active Active
- 2014-06-09 TW TW103119939A patent/TWI538997B/zh active
- 2014-06-09 TW TW105108587A patent/TW201625780A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030183251A1 (en) * | 2001-04-24 | 2003-10-02 | Kabushiski Kaisha Kobe Seiko Sho | Process for drying an object having microstructure and the object obtained by the same |
JP2003206497A (ja) * | 2002-01-11 | 2003-07-22 | Sony Corp | 洗浄及び乾燥方法 |
US20120118332A1 (en) * | 2010-11-15 | 2012-05-17 | Yohei Sato | Supercritical drying method for semiconductor substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109790349A (zh) * | 2016-10-05 | 2019-05-21 | Agc株式会社 | 含有含氟聚合物的组合物和带含氟聚合物膜的基材的制造方法 |
CN109790349B (zh) * | 2016-10-05 | 2021-09-21 | Agc株式会社 | 含有含氟聚合物的组合物和带含氟聚合物膜的基材的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201529838A (zh) | 2015-08-01 |
TW201625780A (zh) | 2016-07-16 |
KR101643455B1 (ko) | 2016-07-27 |
KR20150086155A (ko) | 2015-07-27 |
TWI538997B (zh) | 2016-06-21 |
JP2015135913A (ja) | 2015-07-27 |
CN104795343B (zh) | 2018-12-04 |
JP5607269B1 (ja) | 2014-10-15 |
US20150206773A1 (en) | 2015-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170803 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220113 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |