CN104791499B - 用于流体流通的阀 - Google Patents
用于流体流通的阀 Download PDFInfo
- Publication number
- CN104791499B CN104791499B CN201410791020.5A CN201410791020A CN104791499B CN 104791499 B CN104791499 B CN 104791499B CN 201410791020 A CN201410791020 A CN 201410791020A CN 104791499 B CN104791499 B CN 104791499B
- Authority
- CN
- China
- Prior art keywords
- valve
- screw rod
- shell
- armature
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000012530 fluid Substances 0.000 title claims abstract description 67
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 39
- 229910052708 sodium Inorganic materials 0.000 claims description 39
- 239000011734 sodium Substances 0.000 claims description 39
- 239000007788 liquid Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000002775 capsule Substances 0.000 claims description 8
- 230000033001 locomotion Effects 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 5
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 4
- 230000002427 irreversible effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 description 11
- 230000008901 benefit Effects 0.000 description 9
- 230000000670 limiting effect Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000029142 excretion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/02—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with screw-spindle
- F16K1/04—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with screw-spindle with a cut-off member rigid with the spindle, e.g. main valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/12—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with streamlined valve member around which the fluid flows when the valve is opened
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C1/00—Reactor types
- G21C1/04—Thermal reactors ; Epithermal reactors
- G21C1/06—Heterogeneous reactors, i.e. in which fuel and moderator are separated
- G21C1/14—Heterogeneous reactors, i.e. in which fuel and moderator are separated moderator being substantially not pressurised, e.g. swimming-pool reactor
- G21C1/16—Heterogeneous reactors, i.e. in which fuel and moderator are separated moderator being substantially not pressurised, e.g. swimming-pool reactor moderator and coolant being different or separated, e.g. sodium-graphite reactor, sodium-heavy water reactor or organic coolant-heavy water reactor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/02—Construction of housing; Use of materials therefor of lift valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K27/00—Construction of housing; Use of materials therefor
- F16K27/02—Construction of housing; Use of materials therefor of lift valves
- F16K27/029—Electromagnetically actuated valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/04—Actuating devices; Operating means; Releasing devices electric; magnetic using a motor
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0603—Multiple-way valves
- F16K31/0606—Multiple-way valves fluid passing through the solenoid coil
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0644—One-way valve
- F16K31/0651—One-way valve the fluid passing through the solenoid coil
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0644—One-way valve
- F16K31/0655—Lift valves
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0644—One-way valve
- F16K31/0655—Lift valves
- F16K31/0658—Armature and valve member being one single element
- F16K31/0662—Armature and valve member being one single element with a ball-shaped valve member
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/08—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid using a permanent magnet
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/44—Mechanical actuating means
- F16K31/50—Mechanical actuating means with screw-spindle or internally threaded actuating means
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C15/00—Cooling arrangements within the pressure vessel containing the core; Selection of specific coolants
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21D—NUCLEAR POWER PLANT
- G21D1/00—Details of nuclear power plant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7849—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being provided under the channel
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K31/00—Actuating devices; Operating means; Releasing devices
- F16K31/02—Actuating devices; Operating means; Releasing devices electric; magnetic
- F16K31/06—Actuating devices; Operating means; Releasing devices electric; magnetic using a magnet, e.g. diaphragm valves, cutting off by means of a liquid
- F16K31/0644—One-way valve
- F16K31/0655—Lift valves
- F16K31/0665—Lift valves with valve member being at least partially ball-shaped
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21C—NUCLEAR REACTORS
- G21C1/00—Reactor types
- G21C1/02—Fast fission reactors, i.e. reactors not using a moderator ; Metal cooled reactors; Fast breeders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Fluid Mechanics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Lift Valve (AREA)
- Valve Housings (AREA)
- Mechanically-Actuated Valves (AREA)
- Electrically Driven Valve-Operating Means (AREA)
Abstract
本发明涉及一种阀,包括:壳体,形成内部适于流体流动的围合区,并具有流体的至少一个流体入口和至少一个流体的出口;阀塞,配置成与和壳体成一体的座配合以至少关闭流体入口或出口;和用于控制阀塞相对于座的位置的装置,其中,控制装置包括磁耦合的至少一个感应器和至少一个电枢,并配置成感应器驱动电枢转动,以便选择性地引起阀塞靠近或远离座移动,感应器相对于壳体固定,所述电枢位于所述围合区内,并相对于支撑阀塞的螺杆固定,螺杆配置成与和壳体成一体的螺母配合,以将电枢的转动转化为阀塞的平移,螺杆是中空的,且阀配置为使流体至少部分地流动通过螺杆。
Description
技术领域
本发明一般涉及阀领域。尤其涉及用于被加热到高温(例如可达到450℃)的液态金属(例如液态钠)流通的阀。
本发明的优选应用领域是核电,且更确切地说是钠冷却快速中子反应堆的运转。
背景技术
第四代冷却反应堆,如ASTRID(先进钠冷技术工业示范反应堆)反应堆使用液态金属,一般钠作为冷却剂。这种冷却剂(除了具有非常高的温度,通常在400℃以上)化学性质非常活泼。
因此,有必要沿着全部的流体路径和尤其是在阀处提供尽可能可靠的密封。
为了控制钠流,已经开发出几个类型的阀。如使用设置为与座配合以阻止液态钠流动的钠阀。控制装置具有电动或手动轮,由移动杆连接至阀塞,并且其驱动使得选择性地移动阀塞接近或远离座成为可能。
为提供密封性,第一种类型的钠阀使用固化钠垫圈。在这种类型的钠阀中,与移动杆接触的阀的一部分配置为接收液态钠并降低其温度。在该部分中,钠凝固并对外部密封。也使用其他密封件,如垫圈。
这种阀型的具体缺点在于,它需要用于保持驱动装置和密封系统的复杂的系统。事实上,驱动装置和密封系统形成重要的部分。此外,这样的重要部分相对于输送管道相对偏移,这增加破裂风险,尤其在发生地震时。现今,为降低破裂风险使用复杂且昂贵的保持系统。
第二类钠阀由波纹管提供密封性。在这种类型的钠阀中,杆配备有形成液态钠通道的阻挡层的波纹管。
这种阀可能以某种方式减少输送管和驱动及密封装置间的偏移,尽管这种偏移没有完全消除。另一方面,这种阀型意味着许多机械部件,这将磨损且可靠性因此受限制。
因此出现提供可能减少或甚至消除用于液体钠的已知阀具有的缺点中的至少一个的阀的需求。
本发明的目的在于满足这种需求。更确切地说,本发明的目的在于降低保持现有钠阀的控制和密封装置的系统的复杂性和/或提高其密封可靠性。
发明内容
为了达到此目的,本发明的一方面涉及一种阀,包括:
-形成围合区的壳体,流体在所述围合区内流动,所述壳体具有至少一个流体入口和至少一个流体出口,
-阀塞,设置成与和壳体成一体的座配合以至少关闭流体入口或至少关闭流体出口,
-用于控制阀塞相对于座的位置的控制装置,
优选地,所述控制装置包括至少一个感应器和至少一个电枢,所述感应器和所述电枢磁耦合并配置成使得所述感应器驱动所述电枢运动,优选为转动,以选择性地使所述阀塞靠近或远离座移动,
优选地,所述电枢位于所述围合区内且与支撑所述阀塞的螺杆成一体,所述螺杆配置成与和所述壳体成一体的螺母配合,以将电枢的转动运动转化为所述阀塞的平移运动。优选地,所述螺杆是中空的,且所述阀配置成使所述流体至少部分地流动通过所述螺杆。
因此,阀塞由于位于围合区内的电枢而偏置。控制压力因此被传递,不用外部致动器和阀塞间的机械连接。相比于由固化钠垫圈或波纹管提供密封性的现有的用于钠的阀这可能显著减小密封性限制。此外,该阀结构包括的部件数量减少。仅有一个元件相对于壳体平移。尤其是,该元件包括电枢,螺杆与电枢制成一体且阀塞支撑在螺杆上。
因此,与现有用于钠的阀相比,阀密封性的强度和可靠性显著改善。
根据本发明的阀还提供其它优点。
特别是,对于感应器来说,此控制阀塞位置的装置非常靠近围合区,对于电枢来说,此控制阀塞位置的装置位于围合区内。因此本发明使得能够减小控制装置的偏移。应该提醒的是,现有用于钠的阀,其密封性由固化钠垫圈或波纹管提供,需要在阀塞和电枢间的压力传递杆或电动轮。此外,尽管使用了复杂的保持系统,在发生地震时质量偏移不可避免地增加破裂的风险。因此本发明提供显著应用优点,其中安全性是基本的挑战,因为是核电。
此外,通过提供壳体上带有的螺母和流体流动通过的中空螺杆,根据本发明的阀使显著减小压头损失成为可能。
相比于现有的用于液态金属的阀门,对于有限的总尺寸使高流量成为可能。通常情况下,对于液态钠的应用,根据本发明的阀使流体速度能够超过每秒10米。因此,这完全适合钠冷快速中子反应堆。
此外,通过提供与螺杆成一体的电枢,本发明使能够防止卡在电枢和螺杆间的任何风险,相对于溶液,其中电枢与螺杆不会制成彼此一体。
相比于现有钠阀,本发明的成本进一步显著降低。
可选地,本发明还可以具有下述可单独或组合考虑的特征中的任何一个:
-优选地,感应器相对于壳体固定。优选地,感应器与壳体成一体。当感应器包括至少一个线圈时,这样的实施方式是优选的。可选地,当感应器仅包括永久磁铁时,其被驱动转动。
-优选地,阀被配置成螺杆浸在流体中。
-优选地,阀被配置成使得大部分流体流动通过螺杆。优选地,配置成使得全部流体在螺杆内流动。
-优选地,壳体具有形成围合区的壁。优选地,感应器和电枢设在在形成围合区的壁的两侧。
-优选地,壁的内表面带有螺母。
-优选地,壳体具有圆柱形壁。
-优选地,圆柱形壁上带有螺母的螺纹。
-优选地,感应器设置在围合区外面。这使能够消除液体对于所述感应器的任何密封性限制。优选地,感应器位于在壳体的壁的外表面。
-优选地,阀配置成使全部流体流动通过螺杆。优选地,螺杆具有部分地形成至少一个流动空间的内壁,以使全部流体流动通过螺杆。优选地,螺杆具有在围合区的纵向部分完全限定流动空间的内壁。
-有利的是,围合区是密封的。除流体入口和流体出口外,流体不能从围合区脱离。它不与大气接触。
-优选地,螺杆具有设置在壳体的壁的内表面对面的外表面,螺杆带有配置为与螺母配合的螺纹。
-有利的是,壳体的壁具有内表面,内表面的至少一部分是圆柱形的,且螺杆具有内壁,内壁的至少一部分为圆柱形的,所述螺杆的内壁与所述壳体的壁的内表面在所述螺杆和所述螺母的配合位置处的直径之比大于0.6,优选为大于0.7,更优选为大于0.85。通常它的范围从0.7到0.9。这使得对于有限的总尺寸能够允许高流量。
-有利的是,螺杆和螺母间的配合形成滚珠螺杆连接。这可能限制部件的尺寸和磨损,因此提高阀的强度和可靠性。
-根据特别有利的实施方式,滚珠螺杆的驱动配置成不可逆的,以使至少在趋向于移动阀塞远离所述阀座的方向上施加在阀塞上的推力不能驱动螺杆在此方向上的转动。因此,即使流体的压力高且即使感应器没有施加扭矩在电枢上,也不能驱动螺杆转动,且因此不能将阀塞从其座移开。只有施加在螺杆上的转动能够实现。该特征使得改善阀的安全性和可靠性成为可能,即使在控制装置故障的情况下,阀将保持关闭。当阀结合至核反应堆回路中时,此种安全性的改进尤其有利。
-壳体形成整体部件。不是用由螺杆和法兰相互形成一体的部件制成。这使得有可能显著提高阀的强度和可靠性,这是显著的优点,因为流体泄漏可能会导致严重损害。
-优选地,壳体由金属制成。
-优选地,仅由焊接在一起的多个部件制成。
-优选地,螺杆由金属制成。
-优选地,阀塞铰接在螺杆上,并能够至少围绕螺杆的平移轴线在所述螺杆上自由转动。这使得有可能降低或甚至消除关闭阀时阀塞和座间的摩擦。因此显著限制了阀塞和座的磨损。
-优选地,壳体和螺杆间的机械连接仅由螺杆和螺母间的配合提供。因此,活动元件和壳体间未设有轴承,除了形成的螺杆和螺母间配合的滚珠螺杆系统的滚珠(如果有的话)。因此,本发明消除了所有可能的轴承和流体之间的密封性限制。
-优选地,阀包括与螺杆成一体的封壳,封壳与螺杆配合以形成用于容纳电枢的密闭腔。因此电枢设置在密闭腔内。由于封壳和螺杆彼此成一体,这两个部分间的气密性是不变的,这也简化了阀并增强了其可靠性。在此优选实施方式中,阀不需要在围合区内设垫圈。唯一不可避免的密封是阀和用于连接至阀的入口和出口的管道之间需要的。因此,阀的密封仅由围合区提供。
-根据替代实施方式,电枢位于壳体的内壁的对面,且与壳体的内壁和螺杆或电枢接触的多个接头设置在电枢的两侧,与螺杆的平移方向一致,且配置为防止流体到达电枢。
-在另一实施方式中,与电枢成一体的保护层覆盖电枢。它设置在电枢和壳体的内表面之间。
-优选地,壳体主要沿与所述螺杆的平移方向一致的纵向延伸,且所述流体入口和/或所述流体出口成形为:至少相对于阀的位置形成了所述围合区的低点,其中所述阀的纵向为水平方向。因此,即使在水平位置时,阀没有液体潴留点。这特别有利于排泄阀或防止装置经历有害的向正确操作的转化。因此,本发明使得有可能防止滞留的液态钠凝固后转变成苏打。
-优选地,壳体主要沿与螺杆的平移方向一致的纵向延伸,并且流体入口和/或流体出口相对于螺杆的平移轴线偏置。
-因此螺杆仅由控制装置的磁力驱动。
-控制装置形成电动机,其转子与螺杆成一体。
-根据一种实施方式,控制装置包括永磁体。这使得能够减小阀的总体尺寸。在组合或替代解决方案中,控制装置包括线圈。这使得有可能减小阀的成本。
本发明的另一方面涉及一种控制液态金属流通的系统,包括金属管道和根据本发明的阀,壳体和螺杆由金属制成,且阀被焊接到该管道上。
本发明的另一个方面涉及根据本发明的用于控制温度大于或等于350℃,优选大于或等于400℃的流体的阀。优选地,流体是液钛金属。优选地,该流体是液态钠。
审查下面的描述和附图后,本发明的其它目的、特征和优点将更加清楚。可以理解的是可以包括其它的优点。
附图说明
本发明的目的和特征及优点将在后面的实施方式的详细描述中更好地显现,以附图说明,其中:
图1为根据本发明的非限制性示例的阀的纵向截面图,阀处于打开位置;
图2为图1中阀的纵向截面图,阀处于关闭位置;
图3为根据本发明另一非限制性示例的阀的径向截面图,截面沿着感应器和电枢。
此处所附附图只作为示例给出,而非对本发明的限制。这些是意在帮助理解本发明的示意图,实际应用比例并非必须与其相同。尤其是各部分、壁及元件的相对厚度及尺寸并不代表实际情况必须如此。
附图标记:
1.阀;2.纵向;3.偏移量;
100.壳体;101.密闭的围合区;102.流体入口;103.流体出口;104.座;105.螺母;106.外表面;107.内表面;108.外螺纹;109.滚珠;110.圆柱形部分;111.锥壁;112.部分锥壁;113.感应器;114.定子;115.管道;116.线圈;117.气缸盖;
200.活动元件;201.阀塞;202.电枢;203.螺杆;204.内螺纹;205.螺杆的外表面;206.内表面;207.腔;208.阀塞的支撑件;209.腔;210.转子;211.磁铁;212.气缸盖;213.活动元件的内表面
具体实施方式
参照图1和2,将说明根据本发明的阀1的非限制性示例。
阀1包括形成外壳的壳体100且壳体100限定出其内部适于流体流动的围合区101。在这个非限制性示例中,壳体100具有入口102和出口103。除入口102和出口103外,围合区101是密封的。壳体100在入口102和出口103处形成焊接端以与管道元件配合,以提供阀1至流体网络或法兰间的流体连接。在钠冷核反应堆的应用范围内,该端优选为焊接在钠回路的管道上。
阀1的围合区100内还包括活动元件200。有利地,该活动元件200完全容纳在围合区101内。其可以在壳体100内平移。优选地,围合区101主要在与活动元件200的平移轴线(具有标号2)一致的纵向2上延伸。活动元件200具有意在与形成座104且与壳体100成一体的互补区域配合。优选地,座104由限定围合区101的壳体100的壁形成。当阀塞201抵靠座104时,流体通道关闭,当阀塞201离开座104时,其允许流体流动。因此,阀塞201相对于座104的位置使控制流体的流动成为可能。
在图示的非限制性示例中,在靠近入口102设置座104。活动元件200在图1和图2中所示的箭头方向的位移(即从入口102到出口103的位移)使阀塞201从座104移开,到达图1所示的打开结构。反之,阀塞201在与箭头方向相反方向上的位移(即从出口103到入口102的位移)引起阀塞201靠近座位104移动到达图2中所示的关闭结构。
活动元件200包括螺杆203或由螺杆203形成。该螺杆203配置为与和壳体100为一体的互补表面配合。优选地,螺杆203具有外表面205,外表面205设置有形成为与设在壳体100的壁内的互补螺纹108配合的螺纹204。根据具体实施方式,螺纹108和204与流体直接接触。
因此,活动元件200与壳体100形成螺杆/螺母连接。这种连接的平移和转动的轴线为图2和图3中示出的轴线2。优选地,这种螺杆/螺母连接具有可能减小卡住风险的滚珠螺杆109。因此,螺杆203在第一方向的转动使阀塞201从座104移开,且螺杆203在第二方向上的转动使阀塞201向靠近座104移动。
特别有利的是,螺杆203由磁控装置控制。感应器113磁驱动与活动元件成统一体的电枢202。根据图示的第一种优选实施方式,电枢202和活动元件200形成彼此安装其上的不同部件。根据替代实施方式,电枢202是由螺杆203形成。因此,在本实施方式中,包括后者的材料如此选择:螺杆203可以用作电枢。因此,螺杆与电枢形成整体部件。
在运转中,电枢202位于围合区101内并在围合区101内运动。有利地,感应器113设置在壳体100的外部,因此降低了密封性限制。
更准确地说,感应器113和电枢202设置在形成内部有流体流动的围合区101的壁的两侧。因此,根据一种实施方式,控制装置形成电动机。
通常,至少在感应器113处,壁的外表面106是圆柱形的,并且感应器113围绕该壁。优选地,壁的内表面107也是圆柱形的并且包围电枢202,具有非常小的运行间隙,以使电枢202能够在形成围合区101的壁内转动。因而,驱动阀塞201位移的控制装置特别紧凑。不需要复杂的保持系统。此外,它显著降低离开管道的质量或甚至没有质量离开管道。因此,本发明使得可能显著简化阀1,并提高阀在重大震动或地震情况下的可靠性以及安全性。
在未示出的有利的实施方式中,电枢202通过被将电枢202与流体分离的封壳覆盖而设置在活动元件200上。活动元件200优选包括外壳207,外壳207配置容纳与电枢202配合且封壳使得能够在外壳207内限定密闭体积。这种密闭是静态的,因为,在操作中,封壳与活动元件200成一体。因而以特别简单和有效的方式提供电枢202的气密性。
在另一种实施方式中,电枢202被封装在保护层内。其所覆盖的保护层将其与流体隔离。优选地,该保护层是钢膜,通常被称为“内衬”。
在另一种实施方式中,如同图1和图2中示出的,电枢202设置为正对壳体100的壁的内表面107。为了保护电枢,它可以被封装在如前述实施方式中的保护层中。可替代地,接头可位于活动元件200和壳体100的壁的内表面107之间,根据螺杆203的平移轴线分布在电枢202的两侧。优选地,接头容纳在腔209内。
活动元件200优选具有用于流体流动的内部通道。因此,螺杆203是中空的。全部流体优选通过该通道。根据特别有利的实施方式,活动元件200至少在其纵向部分具有基本圆柱形的形状。该部分包括螺杆203的外螺纹204和电枢202。该部分是中空的且具有在阀1的纵向部分限定流动空间的内表面206。
应当指出的是,即使流体的一部分在壳体100的壁的内表面107和活动元件200的外表面213间流动,这也不会导致流体泄漏出壳体100。
根据优选实施方式,活动元件200与螺杆203形成单一部件。
根据优选实施方式,螺杆203的内壁在其配合螺母105的螺纹204处限定用于流体通过的部分。优选地,全部流体流动通过该部分。有利的是,在螺杆203和螺母105间的配合处,螺杆203的内壁的直径与壳体100的壁的内表面107的直径的比大于0.6,优选大于0.7,和优选大于0.85。通常,它的范围从0.7至0.9。对于有限的总尺寸,这可能允许高流量。这使得有可能有利地限制压头损失。
通常,在用于核反应堆的钠回路范围内,在螺母105上的螺纹108处,壳体100的壁的内表面107的直径可以大于几十厘米,且内壁也可以大于几十厘米。钠的速度可以达到最大10米/秒。
优选地,活动元件200在壳体100中的转动仅由螺杆203/螺母105引导。因此,阀1不要求壳体100内有滚珠轴承。这特别有利于核应用,因为液体钠与滚珠轴承的存在可能使阀1显著复杂。
对活动元件200在壳体100中的平移的引导优选仅由螺母105和螺杆203间配合提供。适当地调整枢轴也可以改善对平移的引导。
特别有利的是,该滚珠螺杆连接设置成不可逆的尺寸。因此,本发明有可能提供一种抵靠座104的阀塞201的被动保持,从而显著改善了阀1的安全性,即使是在控制装置故障的情况下。例如,对于98毫米的内螺纹204和外螺纹108的中间直径和15mm的螺距,将选择螺纹升角为2.8。
出口103和/或入口102优选为防止任何流体滞留在围合区101内。例如,如图1和图2所示,出口103相对于平移轴线偏置。图中偏移量由标号3示出。当阀1的纵向2水平设置时,出口103优选为构成阀1的低点。这特别有利于排泄阀1。当流体是钠时优点更显著,因为固化在滞留区将产生苏打。
如图2所示,壳体100的壁的内表面107具有圆柱形中部110,优选具有恒定的直径以及两个端部111、112。第一端部111是锥形的,并用以螺杆203的转动轴为中心的法兰与中部110连接。另一端部112局部锥形并用相对于螺杆203的转动轴偏置的法兰与中部110连接。
根据另一实施方式,与前者结合或作为前者替代,入口102偏置并构成避免滞留区的低点。
根据另一实施方式,入口102和出口103彼此同轴并与平移轴线同轴设置。
螺杆203优选形成至少包括内螺纹204和电枢202的容纳区域的整体部件。根据有利的实施方式,螺杆203与阀塞201的支撑件208成一体,支撑件208例如焊接在螺杆203上或与后者形成整体部件。
阀塞201的支撑件208包括将螺杆203连接至阀塞201的脊和用于流体通过的开口。座104和阀塞201都集中在螺杆203的转动轴上。阀塞201优选具有意在抵靠具有圆形或锥形部分的座104的球形部分,使得阀1的关闭由圆形接触提供。
根据特别有利的实施方式,阀塞201安装成相对于螺杆203自由转动,至少绕着螺杆203的转动轴。这使得有可能通过转化阀塞201和螺杆203之间的转动运动消除阀塞201和座104之间的摩擦,从而限制了座104和阀塞201的磨损。优选地,阀塞201的支撑件208与螺杆203成一体,并通过绕螺杆203的转动轴的简单的转动接头容纳阀塞201。
由阀塞201的支撑件208和螺杆203构成的活动元件200优选为全部由金属制成。它可以是整体的或者由焊接部分形成。优选地,阀塞201也由金属制成。
在一种具体实施方式中,阀塞201相对于螺杆203固定且与后者和阀塞201的支撑件208形成整体部件。
壳体100的壁限定围合区101,优选仅由一片制成。优选由金属制成。优选为通过焊接几个部件获得。优选地,除感应器113的壳体和对后者供电的设备的组合外,当感应器113不是永磁铁时,完全由金属制成。
阀1因此可全部由金属制成。因此,它非常适合腐蚀性化学液体和/或加热至非常高的温度的液体,例如,在第4代核反应堆中使用的钠冷却剂。根据优选地实施方式,根据本发明的阀1不包括垫圈300。壳体100(各个螺杆203优选为完全焊接)仍增强组合的强度和可靠性。
根据特别有利的实施方式,永磁铁确保控制装置对螺杆203转动的驱动。这使得有可能减小阀1的整体尺寸。
根据一种替代实施方式,控制装置包括设置有线圈的电动机。这种替代的优点是它比永磁铁便宜。
图3示出了包括磁体和线圈的另一实施方式。在本实施方式中,流体被螺杆203包围。形成转子210的电枢202围绕螺杆203,它包括磁铁211和磁性气缸盖212。壳体100的壁形成围绕转子210的管道115,由剩余由间隙J1保持远离那里。感应器113形成定子114并围绕管道115。定子包括线圈116和磁性气缸盖117。具有标号J2的间隙优选将定子114和管道115分离。
特别有利的是,可以设置有用于手动启动感应器113的装置和/或附加的手动致动感应器以使螺杆203能够手动运动。这使得有可能控制阀塞201的位置,甚至在感应器113出现故障时。
因此,根据本发明的阀1在核反应堆领域特别有利的,更确切地说是在钠冷快速中子反应堆的钠回路中。
鉴于上面的描述,根据本发明的阀1明确地提供了相对于现有阀门1的增强的强度和显著改善的密封性。此外,它使得保持减小整体尺寸的同时,有可能限制压头损失并提供高流动性。其设计使全金属制造成为可能,这仍增加了它的坚固性和可靠性。还提供了更简单的排泄并降低流体意外滞留的风险。它的成本是相当低的。
虽然特别有利于控制液态钠,根据本发明的阀不限定于调节液态金属或调节温度高于300℃的流体。
本发明并不限定于上述实施方式,而是适用于权利要求范围内的所有实施方式。
Claims (23)
1.一种阀(1),包括:
-形成围合区(101)的壳体(100),流体在所述围合区内(101)流动,所述壳体(100)具有至少一个流体入口(102)和至少一个流体出口(103),
-阀塞(201),设置成与和壳体(100)成一体的座(104)配合以至少关闭流体入口(102)或至少关闭流体出口(103),
-用于控制阀塞(201)相对于座(104)的位置的控制装置,
其中
-所述控制装置包括至少一个感应器(113)和至少一个电枢(202),所述感应器和所述电枢磁耦合并配置成使得所述感应器(113)驱动所述电枢(202)转动,以选择性地使所述阀塞(201)靠近或远离座(104)移动,
-所述电枢(202)位于所述围合区(101)内且相对于支撑所述阀塞(201)的螺杆(203)固定,所述螺杆(203)配置成与和所述壳体(100)成一体的螺母(105)配合,以将电枢(202)的转动运动转化为所述阀塞(201)的平移运动,
-所述螺杆(203)是中空的,且所述阀(1)配置成使大部分所述流体流动通过所述螺杆(203)。
2.根据权利要求1所述的阀(1),其中,全部所述流体流动通过所述螺杆(203)。
3.根据权利要求1所述的阀(1),其中,所述壳体(100)具有形成围合区(101)的壁,所述感应器(113)和所述电枢(202)位于壁的两侧,并且所述壁的内表面(107)带有所述螺母(105)。
4.根据权利要求3所述的阀(1),其中,所述壳体(100)的壁具有内表面(107),所述内表面(107)的至少一部分是圆柱形的,所述螺杆(203)具有内壁,所述内壁的至少一部分是圆柱形的;所述螺杆(203)的内壁与所述壳体(100)的壁的内表面(107)在所述螺杆(203)和所述螺母(105)的配合位置处的直径之比大于0.6。
5.根据权利要求4所述的阀(1),所述螺杆(203)的内壁与所述壳体(100)的壁的内表面(107)在所述螺杆(203)和所述螺母(105)的配合位置处的直径之比大于0.85。
6.根据权利要求1所述的阀(1),其中,所述螺杆(203)和所述螺母(105)间的配合形成滚珠螺杆的连接。
7.根据权利要求6所述的阀(1),其中,所述滚珠螺杆的驱动配置成不可逆的,以使至少在趋向于移动所述阀塞(201)远离所述座(104)的方向上施加在所述阀塞(201)上的推力不能驱动螺杆(203)转动。
8.根据权利要求1所述的阀(1),其中,所述壳体(100)形成整体部件。
9.根据权利要求1所述的阀(1),其中,所述壳体(100)仅由焊接在一起的多个部件制成。
10.根据权利要求1所述的阀(1),其中,所述壳体(100)和所述螺杆(203)由金属制成。
11.根据权利要求1所述的阀(1),其中,所述阀塞(201)铰接在所述螺杆(203)上,并能够至少围绕所述螺杆(203)的平移轴线在所述螺杆(203)上自由转动。
12.根据权利要求1所述的阀(1),其中,所述壳体(100)和所述螺杆(203)间的机械连接仅由所述螺杆(203)和所述螺母(105)间的配合提供。
13.根据权利要求1所述的阀(1),包括与螺杆(203)成一体的封壳,所述封壳与所述螺杆(203)配合以形成用于容纳所述电枢(202)的密闭腔(207)。
14.根据权利要求1-12中任一项所述的阀(1),其中,所述电枢(202)和所述螺杆(203)形成整体部件。
15.根据权利要求1-12中任一项所述的阀(1),其中,所述围合区(101)主要沿与所述螺杆(203)的平移方向一致的纵向(2)延伸,且所述流体入口(102)和/或所述流体出口(103)成形为:至少相对于阀(1)的位置形成了所述围合区(101)的低点,其中所述阀的纵向(2)为水平方向。
16.根据权利要求1-12中任一项所述的阀(1),其中,所述壳体(100)主要沿与所述螺杆(203)的平移方向一致的纵向(2)延伸,并且所述流体入口(102)和/或所述流体出口(103)相对于所述螺杆(203)的平移轴线偏置。
17.根据权利要求1-12中任一项所述的阀(1),其中,所述控制装置包括永磁体。
18.根据权利要求1-12中任一项所述的阀(1),其中,所述控制装置包括线圈。
19.根据权利要求18所述的阀(1),其中,所述感应器(113)相对于所述壳体(100)固定。
20.根据权利要求1所述的阀(1),其用于调节温度大于或等于350℃的流体的流通。
21.根据权利要求1所述的阀(1),其用于调节温度大于或等于400℃的流体的流通。
22.根据权利要求20或21所述的阀(1),其用于控制液态钠的流通,以确保钠冷却核反应堆回路中的热传递。
23.一种用于调节液态金属流通的系统,包括金属管道和根据前述权利要求中任一项所述的阀(1),其中,所述壳体(100)和所述螺杆(203)由金属制成,所述阀(1)被焊接到所述管道上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR13/62929 | 2013-12-18 | ||
FR1362929A FR3014994B1 (fr) | 2013-12-18 | 2013-12-18 | Vanne pour circulation de fluide |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104791499A CN104791499A (zh) | 2015-07-22 |
CN104791499B true CN104791499B (zh) | 2019-03-15 |
Family
ID=50137894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410791020.5A Active CN104791499B (zh) | 2013-12-18 | 2014-12-18 | 用于流体流通的阀 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9466695B2 (zh) |
EP (1) | EP2887358B1 (zh) |
JP (1) | JP2015117833A (zh) |
KR (1) | KR20150071682A (zh) |
CN (1) | CN104791499B (zh) |
ES (1) | ES2690791T3 (zh) |
FR (1) | FR3014994B1 (zh) |
RU (1) | RU2649881C2 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10113399B2 (en) | 2015-05-21 | 2018-10-30 | Novatek Ip, Llc | Downhole turbine assembly |
EP3300684B1 (en) * | 2016-09-30 | 2020-01-15 | Ferton Holding S.A. | Fluid distributing device |
CN110073073B (zh) * | 2016-11-15 | 2022-11-15 | 斯伦贝谢技术有限公司 | 用于引导流体流的系统和方法 |
KR102021867B1 (ko) * | 2017-09-20 | 2019-09-17 | 한국원자력연구원 | 냉각재상실사고 방지장치 및 이를 구비한 원자로 |
CN109764156B (zh) * | 2019-02-14 | 2019-10-11 | 江苏中海华核环保有限公司 | 一种二回路钠循环泵试验装置用钠阀 |
CN110230706B (zh) * | 2019-07-10 | 2024-04-16 | 诸暨市亿霸电子阀门有限公司 | 一种电子膨胀阀的执行组件 |
CN110805414A (zh) * | 2019-11-11 | 2020-02-18 | 西安石油大学 | 一种油田电动注水工具行程传感器 |
CN112145779A (zh) * | 2020-08-13 | 2020-12-29 | 浙江理工大学 | 具有止回功能的电磁调节阀 |
CN113757401B (zh) * | 2021-09-07 | 2022-04-22 | 哈电集团哈尔滨电站阀门有限公司 | 一种能够防止楔死的手动楔式闸阀 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2289574A (en) * | 1941-06-19 | 1942-07-14 | Crane Co | Valve |
US4452423A (en) * | 1982-08-03 | 1984-06-05 | Martin Marietta Corporation | Magnetically actuated valve |
US4789132A (en) * | 1986-08-14 | 1988-12-06 | Toyo Engineering Corporation | Valve |
US4948091A (en) * | 1989-02-17 | 1990-08-14 | Kabushiki Kaisha Yaskawa Denki Seisakusho | Motor-operated valve |
US6742681B1 (en) * | 2003-03-27 | 2004-06-01 | Shih-Sheng Yang | Structure of a water outlet valve for water bag mouthpieces |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3871176A (en) * | 1973-03-08 | 1975-03-18 | Combustion Eng | Large sodium valve actuator |
US4057217A (en) * | 1974-01-14 | 1977-11-08 | Sargent Industries, Inc. | Valve construction |
US4579177A (en) * | 1985-02-15 | 1986-04-01 | Camco, Incorporated | Subsurface solenoid latched safety valve |
SE461871B (sv) * | 1988-09-22 | 1990-04-02 | Profor Ab | Aggregat foer floedespaaverkan |
DE3933169A1 (de) | 1989-10-04 | 1991-04-18 | Messerschmitt Boelkow Blohm | Sitzventil |
JPH05248562A (ja) * | 1992-03-10 | 1993-09-24 | Yamatake Honeywell Co Ltd | 弁装置 |
RU2128796C1 (ru) * | 1996-08-22 | 1999-04-10 | Иван Иванович Пеньков | Запорно-регулирующее устройство |
DE10121024A1 (de) * | 2000-05-23 | 2001-11-29 | Mannesmann Rexroth Ag | Antriebsvorrichtung, insbesondere für die Schließeinheit, die Einspritzeinheit oder die Auswerfer einer Kunststoffspritzgießmaschine |
US6840200B2 (en) * | 2000-12-07 | 2005-01-11 | Ford Global Technologies, Inc. | Electromechanical valve assembly for an internal combustion engine |
DE10100422A1 (de) * | 2001-01-08 | 2002-07-11 | Bosch Gmbh Robert | Magnetventil zur Steuerung eines Einspritzventils einer Brennkraftmaschine |
US6802488B1 (en) | 2002-08-30 | 2004-10-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Electro-mechanical coaxial valve |
RU2285180C1 (ru) * | 2005-02-14 | 2006-10-10 | Общество с ограниченной ответственностью "Проминжиниринг" | Клапан-отсекатель |
JP2006292137A (ja) | 2005-04-14 | 2006-10-26 | Ckd Corp | 流量制御弁 |
DE102005028584B4 (de) * | 2005-06-21 | 2008-03-27 | Eads Space Transportation Gmbh | Koaxialventil |
DE102007007664B3 (de) * | 2007-02-13 | 2008-03-27 | Mokveld Valves B.V. | Drosselventil |
ITBS20070064A1 (it) | 2007-04-27 | 2008-10-28 | Omal S P A | Valvola coassiale ad azionamento pneumatico e a trascinamento magnetico |
DE102007037995B4 (de) * | 2007-08-10 | 2013-05-08 | Astrium Gmbh | Koaxialventil mit einem elektrischen Antrieb |
RU82806U1 (ru) * | 2008-11-05 | 2009-05-10 | Максим Вячеславович Кулагин | Клапан электромагнитный запорный |
JP2012246955A (ja) * | 2011-05-25 | 2012-12-13 | Hiroshima Univ | バルブ |
EP2653758A1 (en) * | 2012-04-16 | 2013-10-23 | Danfoss A/S | Axial valve |
JP5391317B1 (ja) * | 2012-08-01 | 2014-01-15 | ジェイエム モーターズ カンパニー エルティディ | 精密な圧力及び流量調節が可能なコーン弁 |
JP7322560B2 (ja) * | 2019-07-11 | 2023-08-08 | 大日本印刷株式会社 | プログラム、情報処理方法及び情報処理装置 |
-
2013
- 2013-12-18 FR FR1362929A patent/FR3014994B1/fr not_active Expired - Fee Related
-
2014
- 2014-12-08 EP EP14196809.9A patent/EP2887358B1/fr active Active
- 2014-12-08 ES ES14196809.9T patent/ES2690791T3/es active Active
- 2014-12-15 RU RU2014150765A patent/RU2649881C2/ru active
- 2014-12-17 JP JP2014254892A patent/JP2015117833A/ja not_active Ceased
- 2014-12-18 KR KR1020140183472A patent/KR20150071682A/ko not_active Application Discontinuation
- 2014-12-18 US US14/575,376 patent/US9466695B2/en not_active Expired - Fee Related
- 2014-12-18 CN CN201410791020.5A patent/CN104791499B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2289574A (en) * | 1941-06-19 | 1942-07-14 | Crane Co | Valve |
US4452423A (en) * | 1982-08-03 | 1984-06-05 | Martin Marietta Corporation | Magnetically actuated valve |
US4789132A (en) * | 1986-08-14 | 1988-12-06 | Toyo Engineering Corporation | Valve |
US4948091A (en) * | 1989-02-17 | 1990-08-14 | Kabushiki Kaisha Yaskawa Denki Seisakusho | Motor-operated valve |
US6742681B1 (en) * | 2003-03-27 | 2004-06-01 | Shih-Sheng Yang | Structure of a water outlet valve for water bag mouthpieces |
Also Published As
Publication number | Publication date |
---|---|
JP2015117833A (ja) | 2015-06-25 |
US20150171190A1 (en) | 2015-06-18 |
RU2014150765A (ru) | 2016-07-10 |
EP2887358A1 (fr) | 2015-06-24 |
ES2690791T3 (es) | 2018-11-22 |
KR20150071682A (ko) | 2015-06-26 |
CN104791499A (zh) | 2015-07-22 |
FR3014994A1 (fr) | 2015-06-19 |
US9466695B2 (en) | 2016-10-11 |
FR3014994B1 (fr) | 2016-08-05 |
RU2649881C2 (ru) | 2018-04-05 |
EP2887358B1 (fr) | 2018-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104791499B (zh) | 用于流体流通的阀 | |
JP5730294B2 (ja) | 弁 | |
CA2550524C (en) | Coaxial valve | |
CN107110386B (zh) | 制冷剂控制阀装置 | |
KR101715315B1 (ko) | 선박의 추진 유닛 | |
JP5501480B2 (ja) | 高温ガス冷却原子炉ヘリウムガススペースの密封伝動装置及びその駆動装置 | |
CN1952450B (zh) | 调整流体、特别是制冷剂流体的流量的阀 | |
CN104276271B (zh) | 船的推进单元 | |
KR101315893B1 (ko) | 유체 내 침투 가능한 이동 로봇 | |
CN103762000A (zh) | 一种应用于高温气冷堆的停球器 | |
JP2015019567A (ja) | 検査装置案内システム | |
CN104482238B (zh) | 一种高温熔盐输送节流阀 | |
JP2008025586A (ja) | 燃料流体噴射回路のための直接制御燃料バルブ | |
CN210800120U (zh) | 一种带夹套的半球体金属密封固定球阀 | |
KR20180124059A (ko) | 전기 에너지 생산을 위한 터빈 발전기 장치 및 관련 작동 및 설치 방법 | |
CN111365467A (zh) | 流量控制单元和防泄漏阀门 | |
KR101826924B1 (ko) | 유량 제어 밸브 및 유량 제어 밸브 장치 | |
CN207421384U (zh) | 球阀 | |
CN221723443U (zh) | 一种水处理旁通阀 | |
CN110319201A (zh) | 双阀体特种罐底芯管阀 | |
RU2807854C1 (ru) | Система, содержащая охлаждающее устройство для машины, заключенной в корпус под давлением | |
CN208565606U (zh) | 半导体单晶炉气囊密封式异形阀 | |
JP2015017945A (ja) | 閉止部材、閉止部材の使用方法及び制御棒駆動機構ハウジング | |
KR200482998Y1 (ko) | 발전 설비의 그리스 주입형 커버 장치 | |
CN105805352A (zh) | 一种三通电机活塞阀 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |