CN104766824B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN104766824B
CN104766824B CN201510009432.3A CN201510009432A CN104766824B CN 104766824 B CN104766824 B CN 104766824B CN 201510009432 A CN201510009432 A CN 201510009432A CN 104766824 B CN104766824 B CN 104766824B
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CN
China
Prior art keywords
film
movable electrode
electrode
insulating film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201510009432.3A
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English (en)
Chinese (zh)
Other versions
CN104766824A (zh
Inventor
佐藤公敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN104766824A publication Critical patent/CN104766824A/zh
Application granted granted Critical
Publication of CN104766824B publication Critical patent/CN104766824B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00166—Electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
CN201510009432.3A 2014-01-08 2015-01-08 半导体装置的制造方法 Expired - Fee Related CN104766824B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014001745A JP6119615B2 (ja) 2014-01-08 2014-01-08 半導体装置の製造方法
JP2014-001745 2014-01-08

Publications (2)

Publication Number Publication Date
CN104766824A CN104766824A (zh) 2015-07-08
CN104766824B true CN104766824B (zh) 2017-12-05

Family

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Family Applications (1)

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CN201510009432.3A Expired - Fee Related CN104766824B (zh) 2014-01-08 2015-01-08 半导体装置的制造方法

Country Status (3)

Country Link
US (1) US9187315B2 (enExample)
JP (1) JP6119615B2 (enExample)
CN (1) CN104766824B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9340412B2 (en) * 2014-07-28 2016-05-17 Ams International Ag Suspended membrane for capacitive pressure sensor
CN106017790B (zh) * 2016-07-07 2019-07-12 江西师范大学 热电堆真空传感器及其制造方法
JP6468403B2 (ja) * 2016-09-21 2019-02-13 株式会社村田製作所 圧電センサ、タッチ式入力装置
WO2018235415A1 (ja) * 2017-06-21 2018-12-27 パナソニックＩｐマネジメント株式会社 物理量センサ
DE102018222758A1 (de) 2018-12-21 2020-06-25 Robert Bosch Gmbh MEMS-Sensor mit einer Membran sowie Verfahren zur Herstellung eines MEMS-Sensors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431057A (en) * 1990-02-12 1995-07-11 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Integratable capacitative pressure sensor
CN103872050A (zh) * 2012-12-07 2014-06-18 三菱电机株式会社 半导体压力传感器及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5258097A (en) 1992-11-12 1993-11-02 Ford Motor Company Dry-release method for sacrificial layer microstructure fabrication
US5332469A (en) 1992-11-12 1994-07-26 Ford Motor Company Capacitive surface micromachined differential pressure sensor
JP3489273B2 (ja) * 1995-06-27 2004-01-19 株式会社デンソー 半導体力学量センサの製造方法
US6167761B1 (en) 1998-03-31 2001-01-02 Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. Capacitance type pressure sensor with capacitive elements actuated by a diaphragm
JP3310216B2 (ja) 1998-03-31 2002-08-05 株式会社日立製作所 半導体圧力センサ
DE69936794T2 (de) 1999-08-20 2008-04-30 Hitachi, Ltd. Halbleiterdrucksensor und vorrichtung zur erfassung von drucken
JP3507978B2 (ja) 2000-02-23 2004-03-15 株式会社日立製作所 静電容量式圧力センサー
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
JP4296731B2 (ja) * 2001-07-18 2009-07-15 株式会社デンソー 静電容量型圧力センサの製造方法
JP3778128B2 (ja) * 2002-05-14 2006-05-24 株式会社デンソー メンブレンを有する半導体装置の製造方法
US7429495B2 (en) * 2002-08-07 2008-09-30 Chang-Feng Wan System and method of fabricating micro cavities
JP5933480B2 (ja) 2013-04-26 2016-06-08 三菱電機株式会社 半導体圧力センサおよびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431057A (en) * 1990-02-12 1995-07-11 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Integratable capacitative pressure sensor
CN103872050A (zh) * 2012-12-07 2014-06-18 三菱电机株式会社 半导体压力传感器及其制造方法

Also Published As

Publication number Publication date
US9187315B2 (en) 2015-11-17
JP6119615B2 (ja) 2017-04-26
CN104766824A (zh) 2015-07-08
US20150191347A1 (en) 2015-07-09
JP2015129699A (ja) 2015-07-16

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Granted publication date: 20171205

Termination date: 20210108