CN104681613A - 半导体器件的fin结构 - Google Patents
半导体器件的fin结构 Download PDFInfo
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- CN104681613A CN104681613A CN201410291087.2A CN201410291087A CN104681613A CN 104681613 A CN104681613 A CN 104681613A CN 201410291087 A CN201410291087 A CN 201410291087A CN 104681613 A CN104681613 A CN 104681613A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000003989 dielectric material Substances 0.000 claims abstract description 34
- 230000005669 field effect Effects 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 239000000463 material Substances 0.000 abstract description 39
- 239000010410 layer Substances 0.000 description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 20
- 238000007254 oxidation reaction Methods 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000013508 migration Methods 0.000 description 9
- 230000005012 migration Effects 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
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- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
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- 239000003292 glue Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- 229910017121 AlSiO Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 LaSiO Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 210000003141 lower extremity Anatomy 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
本发明提供了半导体器件的FIN结构。一种诸如鳍式场效应晶体管(FinFET)的半导体器件的鳍结构及其制造方法。在一个实施例中,在衬底中形成沟槽,并沿着沟槽的侧壁形成内衬,其中,相邻沟槽之间的区域限定了鳍。介电材料形成在沟槽中。鳍的部分半导体材料的由第二半导体材料和第三半导体材料替代,第二半导体材料具有不同于衬底的晶格常数,且第三半导体材料具有不同于第二半导体材料的晶格常数。部分第二半导体材料被氧化。
Description
技术领域
本发明一般地涉及半导体技术领域,更具体地,涉及半导体器件的FIN结构。
背景技术
随着半导体工业已发展到追求更高器件密度、更高性能和更低成本的纳米技术工艺节点上,来自制造和设计问题的挑战都导致了诸如鳍式场效应晶体管(FinFET)的三维设计的发展。典型的FinFET通过从衬底上伸出薄的垂直“鳍”(或鳍结构)来制造,该“鳍”(或鳍结构)例如通过蚀刻掉衬底的硅层的一部分而形成。FinFET的沟槽在这个垂直鳍中形成。在鳍上方提供(例如,包覆)栅极。在沟槽的两侧上具有栅极实现了由两侧对沟槽的栅极控制。此外,可以使用采用选择性生长硅锗(SiGe)而在FinFET的源极/漏极(S/D)部分中形成的应变材料,从而提高载流子迁移率。
发明内容
根据本发明的一方面提供了一种鳍式场效应晶体管(FinFET),包括:衬底;鳍结构,从所述衬底延伸出,所述鳍结构包括下部、上部和介于所述下部与所述上部之间的中部,所述中部的晶格常数不同于所述下部和所述上部的晶格常数,所述中部具有沿着相对侧壁的氧化部分;隔离区,邻近所述鳍结构的相对侧;以及内衬,介于所述隔离区与所述氧化部分之间。
在该FinFET中,所述氧化部分沿着所述鳍的沟道区延伸。
在该FinFET中,所述内衬包括氮氧化物层。
在该FinFET中,所述内衬包括氧化物层和位于所述氧化物层上方的氮化物层。
在该FinFET中,所述内衬将所述氧化部分与所述隔离区完全分隔开。
在该FinFET中,所述氧化部分和所述内衬朝向所述隔离区凸出。
在该FinFET中,所述氧化部分包括GeOx或SiGeOx。
在该FinFET中,所述鳍结构的所述中部包括Ge或SiGe。
根据本发明的另一方面提供了一种鳍式场效应晶体管(FinFET),包括:衬底;多个沟槽,位于所述衬底中,鳍介于相邻的沟槽之间,所述鳍包括第一半导体材料和位于所述第一半导体材料上的第二半导体材料;第一介电材料,位于所述沟槽中;第二介电材料的凹口,沿着所述第二半导体材料的侧壁,所述第二介电材料为所述第二半导体材料的氧化物;以及介电内衬,介于所述第一介电材料与所述第二介电材料之间。
在该FinFET中,所述第一半导体材料具有不同于所述第二半导体材料的晶格常数。
在该FinFET中,所述鳍还包括位于所述第二半导体材料上的第三半导体材料,所述第三半导体材料具有不同于所述第二半导体材料的晶格常数。
在该FinFET中,所述介电内衬将所述第一介电材料与所述第二介电材料完全分隔开。
在该FinFET中,所述介电内衬包括氧化物层和氮化物层。
在该FinFET中,所述介电内衬包括氮氧化物。
根据本发明的又一方面提供了一种方法,包括:提供衬底,所述衬底中形成有沟槽,在相邻沟槽之间的区域中形成鳍,所述鳍包括第一半导体材料;沿着所述沟槽的侧壁形成内衬;在所述沟槽中的所述内衬上方形成第一介电材料;由第二半导体材料替换所述鳍的一部分,所述第二半导体材料具有不同于所述第一半导体材料的晶格常数;氧化所述第二半导体材料的侧壁,从而沿着所述鳍的侧壁形成第二介电材料的凹口;以及在所述鳍上方形成栅电极。
在该方法中,还包括在所述第二半导体材料上方形成第三半导体材料,所述第三半导体材料具有不同于所述第二半导体材料的晶格常数。
在该方法中,所述内衬将所述第二介电材料与所述第一介电材料完全分隔开。
在该方法中,所述内衬为氮氧化物内衬。
在该方法中,形成所述内衬包括:沿着所述沟槽的所述侧壁形成氧化物层;以及对所述氧化物层实施氮化处理以产生氮氧化物层。
在该方法中,所述氮氧化物层具有约3nm至约10nm的厚度。
附图说明
当结合附图进行阅读时,根据下面详细的描述可以更好地理解本发明。应该强调的是,根据工业中的标准实践,各种部件没有被按比例绘制并且仅仅用于说明的目的。实际上,为了清楚的讨论,各种部件的尺寸可以被任意增加或减少。
图1至图8是根据本发明的多个实施例的半导体器件处于各个制造阶段中的截面图;以及
图9是根据本发明的多个方面示出了制造半导体器件的方法的流程图。
具体实施方式
下面,详细讨论本发明各个实施例的制造和使用。然而,应该理解,本发明提供了许多可以在各种具体环境中实现的可应用的概念。所讨论的具体实施例仅仅示出了制造和使用本发明的具体方式,而不用于限制不同实施例的范围。
本发明根据形成鳍式场效应晶体管(FinFET)来呈现。已经发现,在鳍中使用诸如硅锗(SiGe)的应力源可导致锗(Ge)沿着上覆半导体材料的侧壁迁移。例如,在鳍包括形成在Si衬底上方的SiGe层和形成在SiGe层上方的Si层的情况下,SiGe层中的Ge可沿着上覆Si层的侧壁迁移。在一些情况下,这种Ge迁移延伸到邻接隔离区(例如,浅沟槽隔离)的上表面之上,并因此可影响有效鳍宽度和可靠性问题。诸如本文所公开的实施例在SiGe区的上方提供了诸如氮氧化物层的内衬以防止或减少Ge迁移。
因此,图1至图8根据实施例示出了形成半导体器件的方法的各个中间阶段。首先参照图1,示出了衬底102,其具有从其中延伸出的鳍104。衬底102由具有第一晶格常数的半导体形成。正如下文更为详细解释的,具有第二晶格常数的另一半导体层将在衬底102的材料上方形成,第二晶格常数不同于第一晶格常数。在一些实施例中,衬底102包括结晶的硅衬底(例如,晶圆)。在一些实施例中,衬底102可由其他合适的元素半导体形成,诸如合适的化合物半导体(如砷化镓、碳化硅、砷化铟或磷化铟)或合适的合金半导体(如碳化硅锗、磷砷化镓或磷化铟镓)。此外,衬底102可包括外延层(epi层)、可具有应变以用于性能增强和/或可包括绝缘体上硅(SOI)结构。
此外,衬底102可包括其他部件。例如,根据设计需求(例如,p型衬底或n型衬底),衬底可包括多个掺杂区。例如,掺杂区可掺杂p型掺杂剂(诸如硼或BF2);n型掺杂剂(诸如磷或砷);和/或它们的组合。该掺杂区可配置用于n型FinFET,或者可选地配置用于p型FinFET。
衬底102可使用例如光刻技术来图案化。例如,诸如衬垫氧化物层和上覆衬垫氮化物层的掩膜层在衬底102上方形成。衬垫氧化物层可为例如使用热氧化工艺形成的包含氧化硅的薄膜。衬垫氧化物层可充当衬底102与上覆衬垫氮化物层之间的粘附层,且可充当用于蚀刻衬垫氮化物层的蚀刻停止层。在实施例中,例如使用低压化学气相沉积(LPCVD)或等离子体增强化学气相沉积(PECVD)由氮化硅形成衬垫氮化物层。
可使用光刻技术来图案化掩膜层。通常,沉积、辐照(曝光)并显影光刻胶材料(未示出)以去除光刻胶材料的一部分。剩余的光刻胶材料保护下面的材料(在该实例中诸如为掩膜层)免受随后的处理步骤(诸如蚀刻)的影响。如图1所示,在该实例中,图案化光刻胶材料以限定衬垫氧化物106a和衬垫氮化物106b,两者共同被称作图案化的掩膜106。
图案化的掩膜106随后用于图案化衬底102的暴露部分以形成沟槽108,从而在如图1所示的相邻沟槽108之间限定鳍104。如下文进行的详细讨论,随后将会由介电材料填充沟槽108,从而邻近鳍104形成隔离区,诸如浅沟槽隔离(STI)区。在一些实施例中,沟槽108可为彼此平行并彼此紧密间隔的条状件(从顶部观察)。在一些实施例中,沟槽108可为连续的并围绕鳍104。
可以去除光刻胶材料(如果存在),并可实施清洗工艺以从衬底102去除本征氧化物。可使用稀氢氟酸(DHF)实施清洗。
现参照图2,根据实施例示出了沿着鳍104的暴露面形成的一个或多个内衬210。如下文进行的更为详细的解释,将使用具有不同晶格常数的不同类型的半导体材料(诸如硅锗)重新形成鳍104并将实施氧化处理。在氧化处理过程中,一些元素(诸如锗)可扩散到周围的材料中。一个或多个内衬210将充当势垒以防止或减少这种扩散。
在实施例中,使用例如氧化处理和氮化处理形成一个或多个内衬210。在一些实施例中,氧化处理包含热氧化处理、快速热氧化(RTO)处理、化学氧化处理、原位蒸汽生成(ISSG)处理或增强的原位蒸汽生成(EISSG)处理。例如,可以在含氧环境中在约800℃至1000℃的温度下实施热氧化处理约30秒至约5分钟,以形成厚度在约10nm至50nm的氧化物层。
在一些实施例中,氮化处理包含使用熔炉的热氮化或使用NH3、N2O、N2等环境的快速热退火(RTA)。可在约400℃至1200℃的温度下实施热氮化约10秒至约3小时。在其他实施例中,氮化处理可包括等离子体氮化和/或氮注入。例如,可在NH3、N2O、N2等的环境中在约80℃至约400℃的温度下实施等离子体氮化约10秒至1小时。又例如,可使用约5keV至30keV的能量来实施氮注入。
可使用其他氧化和氮化处理。
作为前文描述的氧化和氮化处理的结果,可形成一个或两个内衬层。氧化处理产生确定厚度的氧化物层。氮化处理产生与氧化物层反应的氮原子以形成氮氧化物层,诸如在衬底102为硅衬底的实施例中,该氮氧化物层为氮氧化硅层。如果所选择的氮化处理实施足够长的时间,则氧化物层的整个厚度都可变成氮氧化物层。如果所选择的氮化处理实施较短的时间,则会保留一部分氧化物层,从而产生氧化物层和氮化物层。工艺条件可适于提供期望厚度的氧化物层和氮化物层,从而防止或减少Ge迁移。在实施例中,所产生的氮氧化物层的厚度约为从3nm至10nm。
如下文进行的更详细的解释,可由具有不同晶格常数的其它半导体材料代替部分鳍104,诸如在硅衬底上方形成SiGe层并在SiGe层上方形成Si层。如前文指出的,SiGe层中的Ge具有向上覆Si层内迁移的趋势,因此有可能减小有效栅极宽度并对可靠性产生不利影响。一个或多个内衬210(例如,氮氧化物内衬)防止或减少了Ge的迁移。应当理解,可使用其它含氮层来阻止Ge的扩散。
一个或多个内衬210还可减少或防止硼或其它掺杂剂迁移到例如STI312(参见图3)的周围的隔离区中。硼或其它掺杂剂用于掺杂鳍,从而提供穿过鳍和/或导电势垒到达衬底的导电通路。这些掺杂剂(诸如硼)可扩散到周围的隔离区中。一个或多个内衬210有助于减少或防止这种扩散。
图3根据实施例示出了在沉积介电材料以形成STI312之后产生的结构。在一些实施例中,沟槽108(参见图2)填充有诸如氧化硅、氮化硅、掺杂氟的硅酸盐玻璃(FSG)的介电材料或者也可使用低K介电材料。在一些实施例中,可采用高密度等离子体(HDP)CVD工艺使用硅烷(SiH4)和氧气(O2)作为反应前体来形成STI312。在其他实施例中,可使用次大气压CVD(SACVD)工艺或高深宽比工艺(HARP)形成STI312,其中,工艺气体可包括硅酸四乙酯(TEOS)和臭氧(O3)。在又一些实施例中,可使用旋涂电介质(SOD)工艺来形成STI312,使用诸如氢倍半硅氧烷(HSQ)或甲基倍半硅氧烷(MSQ)。也可使用其它工艺和材料。可实施化学机械抛光(CMP)来形成STI312。
同样如图3所示,去除图案化的掩膜106且使鳍104凹进。在图案化的掩膜106包括由氮化硅形成的氮化物衬垫层106b和由氧化硅形成的氧化物衬垫层106a的实施例中,可采用湿工艺使用热H3PO4来去除衬垫氮化物层106b,但也可使用稀HF酸来去除衬垫氧化物层106a。
去除鳍104的上部并由下文参照图4描述的其它半导体材料来替代替。使用STI区312作为硬掩膜,可实施各向异性等离子体蚀刻工艺来使未受保护或暴露的鳍104凹进。相邻的STI区312之间的鳍104的剩余部分此后将称作鳍104的鳍下部104l。在一些实施例中,鳍下部104l可包括具有第一晶格常数的第一半导体材料,诸如硅衬底。在一些实施例中,可使用选自Cl2、HBr、NF3、CF4和SF6的化学试剂作为蚀刻气体来实施蚀刻工艺。在一些实施例中,使鳍凹进至STI312的上表面下方约60nm至110nm的深度。
图4示出了根据实施例重新形成的鳍104。在实施例中,使用一个或多个外延工艺重新形成鳍104。例如,可使用外延工艺生长具有第二晶格常数(不同于衬底102的第一晶格常数)的第二半导体材料以形成鳍中部104m。在衬底102包括硅衬底的实施例中,可通过外延生长硅锗(SiGe)材料来形成鳍中部104m。在一些实施例中,如图4所示,通过LPCVD工艺选择性生长SiGe以部分地填充凹槽,从而形成鳍中部104m。在一个实施例中,以约400℃至约800℃的温度在约1Torr至200Torr的压力下使用SiH2Cl2、SiH4、GeH4、HCl、B2H6、H2、它们的组合或类似的反应气体来实施LPCVD工艺。
仍参照图4,在形成鳍中部104m之后,以具有第三晶格常数(不同于第二晶格常数)的半导体材料形成鳍上部104u。鳍下部104l和鳍上部104u可由相同的材料(例如,硅)或具有不同晶格常数的不同的材料形成。
在鳍上部104u由硅形成的实施例中,在约400℃至800℃的温度下和约1Torr至100Torr的压力下使用SiH4和H2作为反应气体通过LPCVD工艺选择性地生长鳍上部104u。
在生长之后,可实施诸如CMP的平坦化工艺以将鳍104的上表面平坦化为如图4所示的STI312的上表面。
现参照图5,根据实施例形成伪栅极结构530和源极/漏极区540。在实施例中,STI312凹进,从而暴露出部分鳍104。此后,通过任意合适的工艺形成伪栅极结构530,且在实施例中,伪栅极结构530包括伪栅极532、伪栅极掩膜534和伪间隔件536。例如,通过CVD、物理气相沉积(PVD)、原子层沉积(ALD)、其它合适的方法和/或它们的的组合在衬底102上方沉积伪栅极层并在伪栅极层上方沉积掩膜层,从而形成伪栅极结构530。包括沉积光刻胶材料、根据期望的图案曝光并显影的光刻图案化工艺用于图案化掩膜层和伪栅极层,从而分别形成图5所示的伪栅极掩膜534和伪栅极532。蚀刻工艺包括干蚀刻、湿蚀刻和/或其它蚀刻方法(例如,反应离子蚀刻)。伪栅极层可包括任何合适的材料,诸如氧化硅、氮化硅、多晶硅或任何其它合适的材料。伪栅极掩膜层包括任何合适的材料,例如氮化硅、氮氧化硅和碳化硅。如下文进行的更详细的讨论,在实施高温热处理(诸如用于形成源极/漏极区540的热处理)之后,可由例如高k(HK)栅极绝缘件和金属栅极(MG)替代伪栅极结构530。
可在伪栅极的相对侧的鳍104中形成轻掺杂的漏极(LDD)区(未示出),且可沿着伪栅极532的侧部形成伪间隔件536。可通过注入合适的n型或p型掺杂剂(诸如硼或磷)来形成LDD区。伪间隔件536可包括一层或多层介电材料,诸如氧化硅、氮化硅、碳化硅、氮氧化硅或它们的组合。可通过例如将介电材料沉积在栅极堆叠件上方并各向异性地回蚀介电材料来形成伪间隔件536。
可沿着伪栅极532的相对两侧在鳍104中形成源极/漏极区540。源极/漏极区540可以是共同的源极/漏极区,其中,多个鳍共用一个共同的源极/漏极区,或者,源极/漏极区540可以是如图5所示为单独的源极/漏极区。可通过使未由伪栅极结构530掩蔽的鳍104凹进并外延生长半导体材料来形成源极/漏极区。该凹进过程可包括一个或多个干蚀刻处理、湿蚀刻处理和/或它们的组合。该凹进过程还可包括选择性湿蚀刻或选择性干蚀刻。在一些实施例中,也可以使部分STI312凹进以形成例如共同的源极/漏极沟槽。
如图5所示,半导体材料在源极/漏极凹槽中外延生长以形成源极/漏极区540。在源极/漏极凹槽中生长的外延半导体材料可例如为Ge、Si、GaAs、AlGaAs、SiGe、GaAsP或其它合适的材料。在外延处理期间可原位掺杂源极/漏极区540。例如,外延生长的硅源极/漏极区可掺杂碳以形成Si:C源极/漏极部件、掺杂磷以形成Si:P源极/漏极部件、掺杂硼以形成Si:B源极/漏极部件等。在其它实施例中,通过注入来掺杂源极/漏极部件。
图6示出了在形成源极/漏极区540后产生的鳍104。具体地,图6示出了鳍104除在垂直方向上具有多个区域外(例如,鳍下部104l、鳍中部104m和鳍上部104u),鳍104在水平方向上也具有多个区域,诸如第一区域1041、第二区域1042和第三区域1043,其中第一区域1041和第三区域1043设置在源极/漏极区540的下方,且第二区域1042设置在伪栅极结构530(未在图6中示出,但在上文中结合图5进行了描述)的下方。第一区域1041、第二区域1042和第三区域1043中的每一个均包括鳍下部104l、鳍中部104m和鳍上部104u,然而第二区域1042中的鳍上部104u可具有较大厚度,因为第二区域1042在源极/漏极区540形成期间受到伪栅极结构530的保护。
图6还根据实施例示出了层间介电层(ILD)640的形成和伪栅极掩膜534及伪栅极532的去除。ILD640通过诸如CVD、ALD和旋涂(SOG)的合适的技术由诸如氧化硅、氮氧化物或其它合适的材料的一层或多层介电材料形成。可实施CMP工艺来去除ILD640的多余的材料并使ILD640的顶面与伪栅极结构530(参见图5)的顶面一起平坦化。
去除伪栅极掩膜534和伪栅极532以形成栅极沟槽642。此外,在一些实施例中,使沿着栅极沟槽的底面的STI312凹进以暴露第二区域1042中的鳍上部104u的额外的侧壁部分,从而如图6所示在沟道区中形成STI凹槽644。蚀刻工艺可包括在伪栅极掩膜534和伪栅极532之间及ILD640与栅极隔离件536(如果存在)之间具有蚀刻选择性的选择性湿蚀刻或选择性干蚀刻。可选地,可通过一系列处理使伪栅极掩膜534和伪栅极532凹进,这些处理包括光刻图案化以保护其它区域(例如,ILD640)及回蚀伪栅极掩膜534和伪栅极532。在实施例中,STI凹槽644使得第二区域1042中的高于STI312的最上表面延伸的鳍104的第一高度H1为约30nm至约50nm,且从鳍上部104u的底部至STI312的上表面的第二高度H2为约3nm至约20nm。
如图7所述,根据实施例沿着第二区域1042中的鳍中部104m的侧壁形成氧化区750。氧化区750在沟道区(例如,图6中的栅极沟槽642下方)中形成并在沟道区上施加体应力。如上所述,在氧化处理期间和之后,鳍中部104m的第二半导体材料的元素可趋向迁移,诸如SiGe层的Ge倾向于迁移到上覆Si层内和/或迁移到STI312内。此外,扩散到STI312中的Ge可迁移到鳍的硅层中。内衬的氮层有助于减少或防止这种迁移。
在实施例中,氧化处理包括以约400℃至约600℃的温度在约1atm至约20atm的压力下采用H2O作为反应气体实施的热氧化处理。由于SiGe内的硅的氧化速率大于纯硅,因此在第二区域1042中的鳍中部104m为SiGe且第二区域1042中的鳍上部104u为Si的实施例中,第二区域1042中的鳍中部104m将更快地氧化,并且可控制该处理以氧化鳍中部104m而非第二区域1042中的鳍上部104u。
作为氧化的结果,沿着第二区域1042中的鳍中部104m形成凹口。例如,在鳍104的第二区域1042中的鳍中部104m由SiGe材料形成的实施例中,氧化区750可包含SiGeO。氧化区750的凹口延伸到鳍中部104m的相对侧内且可进一步延伸到鳍下部104l的上边缘部分和鳍上部104u的下边缘部分。
图7还示出,一旦已经沿着鳍104的侧壁在第二区域1042中形成凹口,则可以去除在第二区域1042中的鳍上部104u中所产生的任何氧化物以再次暴露半导体材料。在一个实施例中,可使用例如湿蚀刻或其它合适的工艺来实施氧化物材料的去除。
在一些实施例中,鳍104可被进一步氧化,直到鳍104的相对侧上的氧化区彼此接触,因此氧化物层围绕第二半导体材料的剩余部分。例如,在鳍104的第二区域1042中的鳍中部104m由SiGe形成的实施例中,SiGeO氧化物可围绕SiGe材料的剩余部分。
此后,可实施额外的处理。例如,图8根据实施例示出了沿着栅极沟槽642的侧壁和底部、高k栅极隔离件852和金属栅极854形成的界面层850。界面层850可由氧化物、HfSiO、氮氧化物等通过ALD、CVD、臭氧氧化等形成。高k栅极隔离件(例如,该材料的介电常数大于氧化硅的介电常数)可由介电材料形成,介电材料诸如LaO、AlO、ZrO、TiO、Ta2O5、Y2O3、SrTiO3(STO)、BaTiO3(BTO)、BaZrO、HfZrO、KfLaO、HfAlO、HfSiO、LaSiO、AlSiO、HfTaO、HfTiO、(Ba,Sr)TiO3(BST)、Al2O3、Si3N4、氮氧化物(SiON)或其它合适的材料。
金属栅极854可包括通过ALD、PVD、CVD或其它合适的工艺形成的一层或多层半导体材料,诸如Ti、Ag、Al、TiAlN、TaC、TaCN、TaSiN、Mn、Zr、TiN、TaN、Ru、Mo、Al、WN、Cu、W或其它合适的材料。诸如CMP工艺的平坦化工艺可用于从ILD640的表面去除多余的材料。
应当注意,上述结构可包括其它部件。例如,可形成额外的掺杂区(诸如阱)、内衬/势垒层、介电层和金属化层等。此外,可例如使用不同类型的掺杂剂、半导体材料、栅极材料等形成PMOS和NMOS器件。
图9为根据实施例的示出了可以实施的方法的流程图。该方法开始于步骤902,其中,如前文参照图1的讨论,在衬底中形成沟槽。相邻的沟槽限定了介于沟槽之间的鳍。在步骤904中,如上前文参照图2的讨论,沿着沟槽的侧壁和底部形成内衬。该内衬可例如为氮氧化物,诸如在鳍由硅形成的实施例中,该氮氧化物诸如为氮氧化硅。该内衬可为单层或多层(例如,氧化硅层和氮氧化硅层)且可通过先实施氧化处理后实施氮化处理而形成。
在步骤906中,通过在沟槽中形成介电材料而在沟槽中形成诸如浅沟槽隔离件的隔离区。在形成隔离区后,如前文参照图3的讨论,在步骤908中使鳍凹进。
在步骤910中重新形成鳍。可以重新形成鳍以包括具有不同晶格常数的一层或多层半导体材料。例如,可在硅衬底的凹槽中外延生长SiGe层,且可在SiGe层上外延生长硅层。此后,在步骤912中,如前文参照图5的讨论,形成伪栅极和源极/漏极区。通过沉积伪栅极材料和伪栅极材料层的掩模层的共形层,并使用光刻技术图案化伪栅极来形成伪栅极。可形成LDD注入物并可形成源极/漏极区。
接下来,在步骤914中,如前文参照图6的讨论,去除伪栅极。可以去除伪栅极以沿着鳍的沟道区在STI中形成凹槽,从而暴露位于沟道区中鳍的部分侧壁。在步骤916中,如前文参照图7的描述,实施氧化处理以氧化例如部分SiGe,从而通过体积膨胀产生应力。此后,在步骤918中,如前文参照图8的所述,形成栅电极。
在一个实施例中,提供了一种FinFET。该FinFET包括衬底和从该衬底延伸出的鳍结构。鳍结构包括下部、上部和介于下部与上部之间的中部,其中,中部的晶格常数不同于下部和上部的晶格常数,且中部具有沿着相对侧壁的氧化部分。隔离区邻近鳍结构的相对侧,且内衬介于隔离区与氧化部分之间。
在另一实施例中,提供了一种FinFET。该FinFET包括衬底,该衬底中具有多个沟槽。鳍介于邻近的一对沟槽之间,且鳍包括第一半导体材料和位于第一半导体材料上的第二半导体材料。第一介电材料位于沟槽中。第二介电材料的凹口沿着第二半导体材料的侧壁,且介电内衬介于第一介电材料与第二介电材料之间。
在又一实施例中,提供了一种制造半导体器件的方法。该方法包括提供衬底,该衬底中形成有沟槽,在相邻的沟槽之间的区域中形成鳍,该鳍包括第一半导体材料。沿着沟槽的侧壁形成内衬,且在沟槽中的内衬上方形成介电材料。将鳍的一部分替换为第二半导体材料,其中,第二半导体材料具有不同于第一半导体材料的晶格常数。氧化第二半导体材料的一部分,且在鳍上方形成栅电极。
虽然通过示例和根据优选的实施例描述了本发明,但是应理解本发明不限于公开的实施例。相反地,本发明意图涵盖各种改进和相似的布置(对本领域的技术人员来说显而易见的)。因此,所附权利要求的范围应与最广泛的解释一致以涵盖所有这些改进和相似的布置。
Claims (10)
1.一种鳍式场效应晶体管(FinFET),包括:
衬底;
鳍结构,从所述衬底延伸出,所述鳍结构包括下部、上部和介于所述下部与所述上部之间的中部,所述中部的晶格常数不同于所述下部和所述上部的晶格常数,所述中部具有沿着相对侧壁的氧化部分;
隔离区,邻近所述鳍结构的相对侧;以及
内衬,介于所述隔离区与所述氧化部分之间。
2.根据权利要求1所述的FinFET,其中,所述氧化部分沿着所述鳍的沟道区延伸。
3.根据权利要求1所述的FinFET,其中,所述内衬包括氮氧化物层。
4.根据权利要求1所述的FinFET,其中,所述内衬包括氧化物层和位于所述氧化物层上方的氮化物层。
5.根据权利要求1所述的FinFET,其中,所述内衬将所述氧化部分与所述隔离区完全分隔开。
6.根据权利要求1所述的FinFET,其中,所述氧化部分和所述内衬朝向所述隔离区凸出。
7.根据权利要求1所述的FinFET,其中,所述氧化部分包括GeOx或SiGeOx。
8.根据权利要求1所述的FinFET,其中,所述鳍结构的所述中部包括Ge或SiGe。
9.一种鳍式场效应晶体管(FinFET),包括:
衬底;
多个沟槽,位于所述衬底中,鳍介于相邻的沟槽之间,所述鳍包括第一半导体材料和位于所述第一半导体材料上的第二半导体材料;
第一介电材料,位于所述沟槽中;
第二介电材料的凹口,沿着所述第二半导体材料的侧壁,所述第二介电材料为所述第二半导体材料的氧化物;以及
介电内衬,介于所述第一介电材料与所述第二介电材料之间。
10.一种制造半导体器件的方法,所述方法包括:
提供衬底,所述衬底中形成有沟槽,在相邻沟槽之间的区域中形成鳍,所述鳍包括第一半导体材料;
沿着所述沟槽的侧壁形成内衬;
在所述沟槽中的所述内衬上方形成第一介电材料;
由第二半导体材料替换所述鳍的一部分,所述第二半导体材料具有不同于所述第一半导体材料的晶格常数;
氧化所述第二半导体材料的侧壁,从而沿着所述鳍的侧壁形成第二介电材料的凹口;以及
在所述鳍上方形成栅电极。
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US20150372120A1 (en) | 2015-12-24 |
US9455334B2 (en) | 2016-09-27 |
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US9159833B2 (en) | 2015-10-13 |
US20170005004A1 (en) | 2017-01-05 |
US9947587B2 (en) | 2018-04-17 |
CN104681613B (zh) | 2018-03-23 |
KR20150060525A (ko) | 2015-06-03 |
KR101637718B1 (ko) | 2016-07-07 |
US20150144998A1 (en) | 2015-05-28 |
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