CN104681384B - 离子注入装置 - Google Patents

离子注入装置 Download PDF

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Publication number
CN104681384B
CN104681384B CN201410693818.6A CN201410693818A CN104681384B CN 104681384 B CN104681384 B CN 104681384B CN 201410693818 A CN201410693818 A CN 201410693818A CN 104681384 B CN104681384 B CN 104681384B
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CN
China
Prior art keywords
quadrupole lense
quadrupole
ion
lense
multistage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410693818.6A
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English (en)
Chinese (zh)
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CN104681384A (zh
Inventor
八木田贵典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ion Technology Co Ltd
Original Assignee
SEN Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEN Corp filed Critical SEN Corp
Publication of CN104681384A publication Critical patent/CN104681384A/zh
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Publication of CN104681384B publication Critical patent/CN104681384B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/14—Lenses magnetic
    • H01J2237/1405—Constructional details
    • H01J2237/1415—Bores or yokes, i.e. magnetic circuit in general
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/303—Electron or ion optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30477—Beam diameter

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN201410693818.6A 2013-12-02 2014-11-26 离子注入装置 Active CN104681384B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013248915A JP6253375B2 (ja) 2013-12-02 2013-12-02 イオン注入装置
JP2013-248915 2013-12-02

Publications (2)

Publication Number Publication Date
CN104681384A CN104681384A (zh) 2015-06-03
CN104681384B true CN104681384B (zh) 2018-04-03

Family

ID=53265903

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410693818.6A Active CN104681384B (zh) 2013-12-02 2014-11-26 离子注入装置

Country Status (5)

Country Link
US (1) US9520265B2 (ko)
JP (1) JP6253375B2 (ko)
KR (1) KR102195202B1 (ko)
CN (1) CN104681384B (ko)
TW (1) TWI643233B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9679745B2 (en) * 2015-10-14 2017-06-13 Varian Semiconductor Equipment Associates, Inc. Controlling an ion beam in a wide beam current operation range
US9953801B1 (en) * 2016-11-29 2018-04-24 Axcelis Technologies, Inc. Two-axis variable width mass resolving aperture with fast acting shutter motion
WO2020191839A1 (zh) * 2019-03-27 2020-10-01 华中科技大学 电子辐照系统
US11483919B2 (en) 2019-03-27 2022-10-25 Huazhong University Of Science And Technology System of electron irradiation
US20210090845A1 (en) * 2019-09-19 2021-03-25 Applied Materials, Inc. Electrostatic filter with shaped electrodes
USD956005S1 (en) 2019-09-19 2022-06-28 Applied Materials, Inc. Shaped electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110820B2 (en) * 2006-06-13 2012-02-07 Semequip, Inc. Ion beam apparatus and method for ion implantation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039748A (ja) 1983-08-12 1985-03-01 Jeol Ltd イオンビ−ム集束装置
JPH0744025B2 (ja) 1985-11-14 1995-05-15 株式会社日立製作所 荷電粒子の加減速方法
US4849641A (en) * 1987-06-22 1989-07-18 Berkowitz Edward H Real time non-destructive dose monitor
JP2662960B2 (ja) 1987-12-08 1997-10-15 日本真空技術株式会社 イオン注入装置
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
JP3390541B2 (ja) 1994-09-06 2003-03-24 株式会社日立製作所 荷電粒子投射装置
JP3859437B2 (ja) * 2000-08-04 2006-12-20 株式会社東芝 荷電ビーム露光装置
JP4009900B2 (ja) * 2002-05-30 2007-11-21 財団法人新産業創造研究機構 イオンビーム用像縮小レンズ系及び質量分析装置
JP2005108679A (ja) * 2003-09-30 2005-04-21 Seiko Epson Corp イオン注入装置、イオン注入方法および半導体装置の製造方法
JP4316394B2 (ja) * 2004-01-21 2009-08-19 株式会社東芝 荷電ビーム装置
US8003934B2 (en) * 2004-02-23 2011-08-23 Andreas Hieke Methods and apparatus for ion sources, ion control and ion measurement for macromolecules
JP5100963B2 (ja) * 2004-11-30 2012-12-19 株式会社Ｓｅｎ ビーム照射装置
KR101364672B1 (ko) * 2006-09-12 2014-02-19 가부시키가이샤 에바라 세이사꾸쇼 하전입자선장치, 그 장치를 이용한 비점수차 조정방법 및그 장치를 이용한 디바이스제조방법
JP5274905B2 (ja) * 2008-06-19 2013-08-28 日本電子株式会社 静電偏向器及びそれを用いた荷電粒子ビーム装置
US8124946B2 (en) * 2008-06-25 2012-02-28 Axcelis Technologies Inc. Post-decel magnetic energy filter for ion implantation systems
US8008636B2 (en) * 2008-12-18 2011-08-30 Axcelis Technologies, Inc. Ion implantation with diminished scanning field effects
JP5528753B2 (ja) * 2009-09-25 2014-06-25 株式会社アドバンテスト 電子ビーム露光装置
US20130256527A1 (en) * 2012-03-30 2013-10-03 Varian Semiconductor Equipment Associates, Inc. Hybrid electrostatic lens for improved beam transmission

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8110820B2 (en) * 2006-06-13 2012-02-07 Semequip, Inc. Ion beam apparatus and method for ion implantation

Also Published As

Publication number Publication date
KR20150063940A (ko) 2015-06-10
US20150155129A1 (en) 2015-06-04
US9520265B2 (en) 2016-12-13
KR102195202B1 (ko) 2020-12-24
CN104681384A (zh) 2015-06-03
JP2015106518A (ja) 2015-06-08
TW201523685A (zh) 2015-06-16
JP6253375B2 (ja) 2017-12-27
TWI643233B (zh) 2018-12-01

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