CN104659100A - 隔离型nldmos器件及其制造方法 - Google Patents

隔离型nldmos器件及其制造方法 Download PDF

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CN104659100A
CN104659100A CN201510067904.0A CN201510067904A CN104659100A CN 104659100 A CN104659100 A CN 104659100A CN 201510067904 A CN201510067904 A CN 201510067904A CN 104659100 A CN104659100 A CN 104659100A
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刘冬华
段文婷
钱文生
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

本发明公开了一种隔离型NLDMOS器件，包括：P型衬底上部的相邻N阱和P阱，P阱位于N型深阱中，N型深阱一侧边缘位于N阱与P阱相邻一侧弧形侧边的下方，P阱上部顺序设置有第一P型重掺杂区、第一场氧和第二P型重掺杂区，N阱上部设置有第二场氧和N型重掺杂区，栅氧化层位于P阱和N阱上方第二P型重掺杂区和第二场氧之间，栅极多晶硅位于栅氧化层和部分第二场氧上方，第一P型重掺杂区、第二P型重掺杂区和N型重掺杂区分别通过接触孔引出连接引线。本发明还公开了所示隔离型NLDMOS器件的制造方法。本发明的器件在保证器件关断电压提高的前提下同时能提高器件的开启电压。

Description

隔离型NLDMOS器件及其制造方法
技术领域
本发明涉及半导体制造领域，特别是涉及一种700V BCD工艺平台的40V隔离型NLDMOS器件。本发明还涉及所述NLDMOS器件的制造方法。
背景技术
BCD700V平台上的40V隔离型NLDMOS结构中的DNW(N型深阱)和NW(N阱)由于与其他器件共用，掺杂浓度不可改变。隔离型NLDMOS的DNW作用是将体区与衬底隔离，使漂移区掺杂浓度变浓，从而使器件的关断电压(off-BV)下降。如图1所示，现有隔离型NLDMOS结构通过拉大N阱(NW)与P阱(PW)的距离提高关断电压(off-BV)，但从实际流片数据能够得出这种器件的开启电压(on-BV)比较低。造成开启电压比较低的原因是增加N阱(NW)与P阱(PW)的距离后使靠近沟道侧漂移区掺杂浓度变淡，进而导致导致开启电压(on-BV)下降。
发明内容
本发明要解决的技术问题是提供一种在保证器件关断电压(off-BV)提高的前提下同时能提高器件开启电压(on-BV)的隔离型NLDMOS器件。本发明还提供了所述隔离型NLDMOS器件的制造方法。
为解决上述技术问题，本发明提供的隔离型NLDMOS器件，包括：
P型衬底上部的相邻N阱和P阱，P阱位于N型深阱中，N型深阱一侧边缘位于N阱与P阱相邻一侧弧形侧边的下方，P阱上部顺序设置有第一P型重掺杂区、第一场氧和第二P型重掺杂区，N阱上部设置有第二场氧和N型重掺杂区，栅氧化层位于P阱和N阱上方第二P型重掺杂区和第二场氧之间，栅极多晶硅位于栅氧化层和部分第二场氧上方，第一P型重掺杂区、第二P型重掺杂区和N型重掺杂区分别通过接触孔引出连接引线。
其中，第一、第二P型重掺杂区掺杂剂量为115cm-2至315cm-2；N型重掺杂区掺杂剂量为115cm-2至315cm-2；P阱掺杂剂量为112cm-2至213cm-2；N型深阱掺杂剂量112cm-2至213cm-2，N阱掺杂剂量为512cm-2至313cm-2。
本发明提供的隔离型NLDMOS器件的制造方法，包括以下步骤：
1)在P型衬底上通过N型离子注入形成N型深阱；
2)在N型深阱上通过刻蚀形成第一场氧，在P型衬底上通过刻蚀形成第二场氧；
3)在N型深阱中注入P型离子形成P阱，在P型衬底中注入N型离子形成N阱，使P阱和N阱相邻，并且N型深阱一侧边缘位于N阱与P阱相邻一侧弧形侧边的下方；
4)通过热氧化方法生长栅氧化层；
5)淀积多晶硅，形成刻蚀多晶硅栅；
6)在第一场氧两侧重掺杂注入P型离子形成第一P型重掺杂区和第二P型重掺杂区；
7)在第二场氧远离第一场氧一侧的N阱中重掺杂注入N型离子形成N型重掺杂区；
8)将第一P型重掺杂区、第二P型重掺杂区和N型重掺杂区分别通过接触孔引出连接引线。
其中，制作第一、第二P型重掺杂区掺杂剂量为115cm-2至315cm-2；制作N型重掺杂区掺杂剂量为115cm-2至315cm-2；制作P阱掺杂剂量为112cm-2至213cm-2；制作N型深阱掺杂剂量112cm-2至213cm-2，制作N阱掺杂剂量为512cm-2至313cm-2。。
本发明使N型深阱只注入在P阱(PW)下方区域，并通过横向扩散与漂移区(N阱)相连，实现对P阱(PW)的隔离。将N阱(NW)移向沟道侧，同时漂移区全部由N阱(NW)掺杂并浓度足够高，能保证器件的开启电压(on-BV)与关断电压(off-BV)都提高。
附图说明
下面结合附图与具体实施方式对本发明作进一步详细的说明：
图1是一种现有隔离型NLDMOS器件的结构示意图。
图2是本发明隔离型NLDMOS器件的结构示意图。
图3是本发明隔离型NLDMOS器件制造方法的示意图一。
图4是本发明隔离型NLDMOS器件制造方法的示意图二。
图5是本发明隔离型NLDMOS器件制造方法的示意图三。
图6是本发明隔离型NLDMOS器件制造方法的示意图四。
图7是本发明隔离型NLDMOS器件制造方法的示意图五。
附图标记说明
101—P型衬底
102—N型深阱
103.1第一场氧
103.1第二场氧
104—N阱
105—P阱
106—栅氧化层
107—栅极多晶硅
108—N型重掺杂区
109.1—第一P型重掺杂区
109.2—第二P型重掺杂区
110—接触孔
111—引线
具体实施方式
如图2所示，本发明提供的隔离型NLDMOS器件，包括：
P型衬底101上部的相邻N阱104和P阱105，P阱105位于N型深阱102中，N型深阱102一侧边缘位于N阱104与P阱105相邻一侧弧形侧边的下方，P阱104上部顺序设置有第一P型重掺杂区109.1、第一场氧103.1和第二P型重掺杂区109.2，N阱104上部设置有第二场氧103.2和N型重掺杂区108，栅氧化层106位于P阱105和N阱104上方第二P型重掺杂区109.2和第二场氧103.2之间，栅极多晶硅107位于栅氧化层106和部分第二场氧上方103.2，第一P型重掺杂区109.1、第二P型重掺杂区109.2和N型重掺杂区108分别通过接触孔110引出连接引线111。其中，第一、第二P型重掺杂区掺杂剂量为115cm-2至315cm-2；N型重掺杂区掺杂剂量为115cm-2至315cm-2；P阱掺杂剂量为112cm-2至213cm-2；N型深阱掺杂剂量112cm-2至213cm-2，N阱掺杂剂量为512cm-2至313cm-2。
本发明提供的隔离型NLDMOS器件的制造方法，包括以下步骤：
如图1所示，1)在P型衬底101上通过N型离子注入形成N型深阱102，N型深阱掺杂剂量112cm-2至213cm-2；
2)在N型深阱102上通过刻蚀形成第一场氧103.1，在P型衬底101上通过刻蚀形成第二场氧103.2；
3)在N型深阱102中注入P型离子形成P阱105，在P型衬底101中注入N型离子形成N阱104，使P阱105和N阱104相邻，并且N型深阱102一侧边缘位于N阱104与P阱105相邻一侧弧形侧边的下方，P阱掺杂剂量为112cm-2至213cm-2，N阱掺杂剂量为512cm-2至313cm-2。；
4)通过热氧化方法生长栅氧化层106；
5)淀积多晶硅，形成刻蚀多晶硅栅107；
6)在第一场氧103.1两侧重掺杂注入P型离子形成第一P型重掺杂区109.1和第二P型重掺杂区109.2，制作第一、第二P型重掺杂区掺杂剂量为115cm-2至315cm-2；
7)在第二场氧103.2远离第一场氧103.1一侧的N阱104中重掺杂注入N型离子形成N型重掺杂区108，N型重掺杂区掺杂剂量为115cm-2至315cm-2；
8)将第一P型重掺杂区109.1、第二P型重掺杂区109.2和N型重掺杂区108分别通过接触孔110引出连接引线111。
以上通过具体实施方式和实施例对本发明进行了详细的说明，但这些并非构成对本发明的限制。在不脱离本发明原理的情况下，本领域的技术人员还可做出许多变形和改进，这些也应视为本发明的保护范围。

Claims (12)

1.一种隔离型NLDMOS器件，其特征是,包括：
P型衬底上部的相邻N阱和P阱，P阱位于N型深阱中，N型深阱一侧边缘位于N阱与P阱相邻一侧弧形侧边的下方，P阱上部顺序设置有第一P型重掺杂区、第一场氧和第二P型重掺杂区，N阱上部设置有第二场氧和N型重掺杂区，栅氧化层位于P阱和N阱上方第二P型重掺杂区和第二场氧之间，栅极多晶硅位于栅氧化层和部分第二场氧上方，第一P型重掺杂区、第二P型重掺杂区和N型重掺杂区分别通过接触孔引出连接引线。
2.如权利要求1所述隔离型NLDMOS器件，其特征是：N阱掺杂剂量为512cm-2至313cm-2。
3.如权利要求1所述隔离型NLDMOS器件，其特征是：第一、第二P型重掺杂区掺杂剂量为115cm-2至315cm-2。
4.如权利要求1所述隔离型NLDMOS器件，其特征是：N型重掺杂区掺杂剂量为115cm-2至315cm-2。
5.如权利要求1所述隔离型NLDMOS器件，其特征是：P阱掺杂剂量为112cm-2至213cm-2。
6.如权利要求1所述隔离型NLDMOS器件，其特征是：N型深阱掺杂剂量112cm-2至213cm-2。
7.一种隔离型NLDMOS器件的制造方法，其特征是,包括以下步骤：
1)在P型衬底上通过N型离子注入形成N型深阱；
2)在N型深阱上通过刻蚀形成第一场氧，在P型衬底上通过刻蚀形成第二场氧；
3)在N型深阱中注入P型离子形成P阱，在P型衬底中注入N型离子形成N阱，使P阱和N阱相邻，并且N型深阱一侧边缘位于N阱与P阱相邻一侧弧形侧边的下方；
4)通过热氧化方法生长栅氧化层；
5)淀积多晶硅，形成刻蚀多晶硅栅；
6)在第一场氧两侧重掺杂注入P型离子形成第一P型重掺杂区和第二P型重掺杂区；
7)在第二场氧远离第一场氧一侧的N阱中重掺杂注入N型离子形成N型重掺杂区；
8)将第一P型重掺杂区、第二P型重掺杂区和N型重掺杂区分别通过接触孔引出连接引线。
8.如权利要求3所述隔离型NLDMOS器件的制造方法，其特征是：制作第一、第二P型重掺杂区掺杂剂量为115cm-2至315cm-2。
9.如权利要求3所述隔离型NLDMOS器件的制造方法，其特征是：制作N型重掺杂区掺杂剂量为115cm-2至315cm-2。
10.如权利要求3所述隔离型NLDMOS器件的制造方法，其特征是：制作P阱掺杂剂量为112cm-2至213cm-2。
11.如权利要求3所述隔离型NLDMOS器件的制造方法，其特征是：制作N型深阱掺杂剂量112cm-2至213cm-2。
12.如权利要求3所述隔离型NLDMOS器件的制造方法，其特征是：制作N阱掺杂剂量为512cm-2至313cm-2。
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