CN104637941A - Composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and preparation method thereof - Google Patents
Composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and preparation method thereof Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000002955 isolation Methods 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000002161 passivation Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 39
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 30
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Abstract
The invention discloses a composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and a preparation method thereof. The device is of a composite channel structure; mesa isolation of combined ion injection and wet corrosion is adopted; a source-drain metallic system of Ni/AuGe/Ni/Au forms ohmic contact; a T-shaped gate is manufactured by using a three-layer resist technology of two self-alignment processes of an electronic exposure beam and one development process; two different kinds of corrosion solution are used for corroding to form a gate groove; a vaporized Pt/Ti/Pt/Au metallic system forms schottky contact in the gate groove; buried Pt is formed through annealing treatment; a silicon nitride passivation layer is formed; thus the preparation of the device is finished. The oscillator and the method have the advantages of simple process, high reliability of the device and convenience in repetition. Superior direct current performance and alternating current performance are obtained by using the prepared device with gate length of 80 nanometers, the maximum output saturation current reaches 920 mA/mm, and the extrinsic transconductance reaches 1,100 mS/mm. The characteristic frequency of the device reaches 246GHz, and the maximum oscillation frequency is 301GHz.
Description
Technical field
The invention belongs to microwave communication devices field, be specifically related to a kind of composite channel MHEMT (becoming component High Electron Mobility Transistor) microwave oscillator and preparation method thereof.
Background technology
Microwave oscillator is very important element in microwave receiving system.At present, conventional generation microwave oscillation has two large classes, i.e. electron tube and solid state device.Electron tube mainly comprises microwave electrovacuum triode, reflex klystron, magnetron and backward wave tube etc.; Solid state device has transistor, bulk-effect diode (also claiming Gunn diode) and avalanche diode etc.Because electron tube is harsher with technological requirement to manufacturing environment, make its manufacturing cost high, cannot popularize and promote, therefore apply less in microwave mobile communication equipment.Although silicone based crystal triode manufacturing technology traditional in solid state device is more ripe, its intrinsic AC characteristic is poor, the characteristic frequency that can produce and frequency of oscillation less, to high-speed microwave communication system exist restriction.Bulk-effect diode and avalanche diode, although can produce higher frequency of oscillation, have the relatively simple feature of manufacturing process, but it is lower to there is power output, need the series of process such as external amplifying circuit, add technology difficulty, and there is the repeatable shortcoming such as poor in this system.
Based on the microwave oscillation device of GaAs substrate HEMT (gallium arsenide substrate High Electron Mobility Transistor) technology, utilize the non-linear generation high order harmonic component of devices function, the DC point of transistor, usually the cut-off region of voltage-current characteristic is placed in, output loop is then tuned on the nth harmonic of incoming frequency, compare traditional silicone based crystal triode and there is higher frequency of oscillation, compare with avalanche diode with bulk-effect diode simultaneously, except there is higher output frequency, also there is certain power output gain, therefore the application and development in microwave oscillator has obvious advantage.But, the raceway groove two-dimensional electron gas of traditional GaAs substrate HEMT and electron mobility, it is all very large that impact by material structure cannot accomplish to make conducting channel electron mobility and two-dimensional electron gas, make the dynamic range of devices function little, limit the development of GaAs substrate HEMT device in micro-wave resonator circuit and microwave communication.Although the High Electron Mobility Transistor raceway groove of InP substrate in channels two-dimensional electron gas and electron mobility is all higher, the manufacturing cost of InP substrate is higher, and material is more crisp, the popularization be unfavorable for.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of composite channel MHEMT microwave oscillator and preparation method thereof, and it has, and two-dimensional electron gas is high, channel electron mobility is large, device feature frequency and frequency of oscillation is high and manufacturing process is simply easy to the features such as realization.
For solving the problem, the present invention is achieved by the following technical solutions:
A preparation method for composite channel MHEMT microwave oscillator, comprises step as follows:
Step 1, epitaxial growth graded buffer layer, cache layer, the second channel layer, a channel layer, separator, barrier layer, etching stop layer, the first cap layers and the second cap layers successively on substrate layer, form the epitaxial mesa of sample;
Step 2, even glue photoetching protection epitaxial mesa; Adopt ion implantor to carry out ion implantation, make channel region form isolation; Utilize corrosive liquid to corrode the first cap layers and the second cap layers, the electric leakage of isolation top layer, forms the isolation table top of sample;
Step 3, even glue photoetching protective separation table top; Adopt electron beam evaporation platform evaporation source metal and leak metal, forming the source and drain ohmic contact of sample;
Step 4, adopts 3 layers of electron beam resist to sample, and double exposure, forms T-shaped grid structure after a developing process, and as the grid groove corrosion mask layer of sample;
Step 5, utilizes corrosive liquid to corrode etching stop layer, the first cap layers and the second cap layers, forms the grid groove of sample;
Step 6, utilizes electron beam evaporation platform to grow grid metals, carries out short annealing afterwards and makes grid metal and barrier layer fully contact formation to bury grid, the T-shaped metal gate of formation sample after peeling off;
Step 7, growth of passivation layer on sample, utilizes reactive ion etching device detection window, finally completes the preparation of device.
In above-mentioned steps 2,3,4 and 7, all needed to carry out HMDS surface preparation process to sample before each photoetching.
In above-mentioned steps 2, described corrosive liquid is citric acid and hydrogen peroxide mixed solution, and C
6h
8o
7: H
2o
2=1:1; In step 5, described corrosive liquid is rare salt, phosphoric acid and glacial acetic acid mixed solution, and HCl:H
3pO
4: CH
3cOOH:H
2o=1:1:2:2.
In above-mentioned steps 3, source metal and leakage metal are respectively formed by stacking from bottom to top by Ni, AuGe, Ni and Au; In step 6, grid metal is formed by stacking from bottom to top by Pt, Ti, Pt and Au.
In above-mentioned steps 4,3 layers of electron beam lithography from bottom to top glue is followed successively by PMMA4, MMA-EL9 and PMMA2.
In above-mentioned steps 6, anneal in nitrogen, its temperature is 300 DEG C, and the time is 30 seconds.
Based on a kind of composite channel MHEMT microwave oscillator prepared by said method, the active solid state device of this microwave oscillator is made up of the change component High Electron Mobility Transistor of gallium arsenide substrate; The change component High Electron Mobility Transistor of described gallium arsenide substrate is made up of substrate layer, graded buffer layer, cache layer, the first channel layer, the second channel layer, separator, barrier layer, etching stop layer, the first cap layers and the second cap layers from bottom to top successively; Drain electrode and source electrode divide the top being located at the second cap layers; Offer grid groove in first cap layers, the second cap layers and etching stop layer, the grid of T-shaped embeds in this grid groove, and the grid pin of grid contacts with barrier layer.
Si δ is adopted to adulterate between barrier layer and separator.
First channel layer is the In becoming In component
0.6ga
0.4as conducting channel, second links up the In that layer is change In component
0.7ga
0.3as conducting channel, the first channel layer and second is linked up layer and is formed composite conducting channel structure.
Source metal and leakage metal are respectively formed by stacking from bottom to top by Ni, AuGe, Ni and Au; Grid metal is formed by stacking from bottom to top by Pt, Ti, Pt and Au.
Compared with prior art, GaAs substrate MHEMT (gallium arsenide substrate becomes component High Electron Mobility Transistor) device overcomes the impact by material structure compared with GaAs substrate HEMT device, utilize and become component material growing technology, the stress that abundant release GaAs substrate produces epitaxial material, realize good Lattice Matching, channel part is made to reach high In ingredient, enhance two-dimensional electron gas and electron mobility in raceway groove, GaAs substrate is adopted on device substrate is chosen, reduce device manufacturing cost, performance obtains the performance of the first-class effect with InP substrate, thus utilize GaAs substrate MHEMT device to manufacture microwave oscillator and there is very strong practicality and value.In addition, the present invention is also on novel composite channel material structure basis, adopt the mesa-isolated technology that ion implantation combines with wet etching, three layers of unique electron beam resist, twice exposure, the T-shaped grid manufacturing technology of once developing, and adopt and bury that the mutual conductance that Pt technology produces the long device of 80nm grid is 1.1S/mm, drain electrode output saturation current density is 860mA/mm, characteristic frequency is 240GHz, and frequency of oscillation is 280GHz.The features such as therefore under equal conditions use the GaAs substrate MHEMT for preparing of the technology of the present invention to design microwave oscillator, power output is larger, and the better and phase noise of stability is lower.
Accompanying drawing explanation
Fig. 1 is that a kind of composite channel GaAs substrate becomes component epitaxial material structure figure.
Fig. 2 is a kind of composite channel GaAs substrate MHEMT microwave oscillator structure chart.
Fig. 3 is a kind of microscope figure of composite channel GaAs substrate MHEMT microwave oscillator.
Fig. 4 is T-shaped appearance structure after the three layers of optical cement exposure of a kind of composite channel GaAs substrate MHEMT microwave oscillator.
Fig. 5 is a kind of T-shaped grid scanning electron microscope diagram of composite channel GaAs substrate MHEMT microwave oscillator.
Fig. 6 is a kind of transfer characteristic curve figure of composite channel GaAs substrate MHEMT microwave oscillator.
Fig. 7 is a kind of output characteristic curve figure of composite channel GaAs substrate MHEMT microwave oscillator.
Fig. 8 is a kind of characteristic frequency and maximum oscillation frequency curve chart of composite channel GaAs substrate MHEMT microwave oscillator.
Embodiment
A preparation method for composite channel MHEMT microwave oscillator, comprises the steps:
Step one: epitaxial material growth.
The change In component I nAlAs resilient coating of epitaxial growth 500nm, the In of 300nm successively on GaAs SI-substrate layer
0.52al
0.48the In of As resilient coating, 7.5nm
0.6ga
0.4the In of As conductivity channel layer, 7.5nm
0.7ga
0.3the In of As conductivity channel layer, 4nm
0.52al
0.48the In of As separator, 8nm
0.52al
0.48the InP etching stop layer of As barrier layer, 5nm, the In of 20nm
0.53ga
0.47the In of As cap layers, 5nm
0.65ga
0.35as cap layers, forms GaAs substrate and becomes component epitaxial material structure.Be that a kind of composite channel GaAs substrate becomes component epitaxial material structure figure see Fig. 1.
Step 2: device isolation is formed.
Even glue photoetching protection table top.First, HMDS surface preparation is carried out to sample, to strengthen the adhesiveness of photoresist and sample surfaces.Then, even photoresist AZ5214, rotating speed is 4000 revolutions per seconds, the time is 30 seconds.Front baking, temperature is 95 DEG C, the time is 90 seconds.MA6 deep-UV lithography machine is utilized to expose 6.5 seconds.Use 3038 developing liquid developing 45 seconds.Deionized water is fixing.Nitrogen dries up.Adopt ion implantor B ion implantation is carried out to sample, Implantation Energy is 20Kev, and implantation dosage is 2.0E+14cm-2, to channel part formed high-barrier from.Adopt C
6h
8o
7: H
2o
2=1:1 corrosive liquid corrosion In
0.53ga
0.47as cap layers, In
0.65ga
0.35as cap layers, the electric leakage of isolation top layer, erosion removal, forms the isolation between device.
Step 3: source and drain metal ohmic contact is formed.
HMDS (hexamethyldisiloxane) surface preparation is carried out to sample, to strengthen the adhesiveness of photoresist and sample surfaces.Even photoresist AZ5214, rotating speed is 4000 revolutions per seconds, the time is 30 seconds.Dust-free cotton bud is used to remove the photoresist of sample edge part.Front baking, temperature is 95 DEG C, the time is 90 seconds.MA6 deep-UV lithography machine is utilized to expose 1.9 seconds.Carry out reversion to sample to dry, temperature is 110 DEG C, the time is 90 seconds.General exposure 42 seconds is carried out to sample.Use 3038 developing liquid developing 50 seconds.Deionized water is fixing.Nitrogen dries up.Adopt electron beam evaporation platform evaporation Ni (5nm)/AuGe (100nm)/Ni (20nm)/Au (100nm) source and drain metal and gate electrode, namely source, leakage metal are formed by stacking from bottom to top by the Au of Ni and 100nm of AuGe, 20nm of Ni, 100nm of 5nm, do not need annealing, form ohmic contact, the source-drain contact resistance utilizing TLM to test is 0.1 Ω mm, and ohmic contact resistance is 1.3E-6 Ω cm
2.The above-mentioned size frame to metal evaporation equipment does not specially require, and size all can get a desired effect.Peel off in acetone, complete source and drain metal ohmic contact and make the making with gate electrode, form the ohmic contact of good source and drain.
Step 4: the formation of T-shaped grid mask layer.
T-shaped grid preparation, adopt three layers of electron beam resist, double exposure, forms T-shaped grid structure after a developing process, and as grid groove corrosion mask layer.That is: even orlop electron beam resist PMMA4, rotating speed is 5000 revolutions per seconds, the time is 40 seconds.Hot plate front baking, temperature is 180 DEG C, the time is 2 minutes.Even second layer electron beam resist MMA-EL9, rotating speed is 5000 revolutions per seconds, the time is 40 seconds.Hot plate bake, temperature is 180 DEG C, and the time is 2 minutes 30 seconds.Even top layer electron beam resist PMMA2, rotating speed is 5000 revolutions per seconds, and the time is 40 seconds.Hot plate front baking, temperature is 180 DEG C, 2 minutes time.Adopt twice autoregistration electron beam exposure.Once develop, developer solution is: pennone: isopropyl alcohol (IPA)=1:3, develops 100 seconds, in isopropyl alcohol fixing 30 seconds.The T-shaped grid structure of three layer photoetching glue of preparation is as grid groove corrosion mask layer.
Step 5: the formation of grid recess.
Grid recess corrodes, and utilizes citric acid and hydrogen peroxide mixed solution and rare salt, phosphoric acid and glacial acetic acid mixed solution to corrode In respectively
0.53ga
0.47as cap layers, In
0.65ga
0.35as cap layers and InP etching stop layer, form grid groove.That is: C is utilized
6h
8o
7: H
2o
2=1:1 corrosive liquid corrosion In
0.53ga
0.47as cap layers, In
0.65ga
0.35as cap layers, etching time is 2 minutes 20 seconds.Utilize HCl:H
3pO
4: CH
3cOOH:H
2o=1:1:2:2 corrosive liquid corrosion InP etching stop layer, etching time is 20 seconds, forms grid groove.
Step 6: grid metallization is formed.
Utilize electron beam evaporation platform to evaporate Pt (6nm)/Ti (20nm)/Pt (50nm)/Au (150nm), namely grid metal is formed by stacking from bottom to top by the Au of Pt and 150nm of Ti, 50nm of Pt, 20nm of 6nm.Because electron beam resist is very responsive to thermal radiation, prevent electron beam resist heating temperature too high, and distortion make to peel off, and large frame need be used to carry out grid metallic growth.Complete T-shaped gate metal to make.Sample is annealed in nitrogen, annealing temperature is 300 DEG C, the time is 30 seconds, grid Pt metal can be made to be diffused into barrier layer, formed and bury Pt technique, make the grid of device stronger to the control of raceway groove like this, improve the gain of device.Acetone is peeled off and is formed T-shaped metal gate.
Step 7: device passivation and device detection opening etch.
Utilize ICP-CVD grown silicon nitride passivation layer, growth temperature is 75 DEG C, growth time is that 2 minutes, first radio-frequency power is 150W, second radio-frequency power is 2400W.Even glue makes test window figure by lithography: carry out HMDS surface preparation to sample, to strengthen the adhesiveness of photoresist and sample surfaces; Even photoresist AZ5214, rotating speed is 4000 revolutions per seconds, 30 seconds time; Front baking, temperature is 95 DEG C, the time is 90 seconds.MA6 deep-UV lithography machine is utilized to expose 6.5 seconds.Use 3038 developing liquid developing 45 seconds.Deionized water is fixing.Nitrogen dries up.Utilize RIE (reactive ion etching) silicon nitride test window, adopt 10V direct current biasing, FWD (forerunner) power is that 200W, AVG (on average) power is 200W, temperature is 75 DEG C, the time is 2 minutes, finally complete the preparation of device.
Adopt a kind of composite channel MHEMT microwave oscillator prepared by said method, as shown in Figure 2, it is by the active solid state device of GaAs substrate MHEMT as microwave oscillator.Described GaAs substrate MHEMT introduces composite conducting raceway groove and the design of T-shaped grid, comprises GaAs SI-substrate layer, InAlAs gradual change In component resilient coating, In
0.52al
0.48as resilient coating, In
0.6ga
0.4as conductivity channel layer and In
0.7ga
0.3as conductivity channel layer, do not adulterate In
0.52al
0.48as separator, In
0.52al
0.48as barrier layer, InP etching stop layer, In
0.53ga
0.47as cap layers, In
0.65ga
0.35as cap layers, grid, drain electrode and source electrode.GaAs SI-substrate layer, InAlAs gradual change In component resilient coating, In
0.52al
0.48as resilient coating, In
0.6ga
0.4as conducting channel and In
0.7ga
0.3as conductivity channel layer, do not adulterate In
0.52al
0.48as separator, In
0.52al
0.48as barrier layer, InP etching stop layer, In
0.53ga
0.47as cap layers and In
0.65ga
0.35as cap layers sets gradually from bottom to top.Drain electrode and source electrode are arranged on In
0.65ga
0.35the top of As cap layers.The two-layer cap layers and the etching stop layer that are positioned at top offer grid groove, and T-shaped grid embeds in this grid groove, grid pin and In
0.52al
0.48as barrier layer contacts.
GaAs SI-substrate becomes the epitaxial material structure of component High Electron Mobility Transistor by the epitaxial growth of molecular beam epitaxy (MBE) equipment.In
0.52al
0.48as barrier layer and In
0.52al
0.48adopt Si δ to adulterate between As separator, doping content is 5.0E+12cm-3.Adopt the In becoming In component
0.6ga
0.4as conductivity channel layer and In
0.7ga
0.3as conductivity channel layer is formed and becomes In component composite conducting raceway groove.In composite channel, electron mobility scope is 9000 ~ 11000cm
2/ VS, two-dimensional electron gas scope is 2.0E+12 ~ 3.5E+12cm
-2.Be positioned at the In at top
0.65ga
0.35as cap layers, In
0.53ga
0.47grid groove is opened at the middle part of As cap layers and InP etching stop layer, and mesa-isolated adopts ion implantation to combine with wet etching.Grid is three layers of electron beam resist double exposure, the T-shaped grid that the T-shaped grid technique once developed is made.Grid adopts 300 DEG C, and that within 30 seconds, anneals buries grid structure.
Fig. 4 is T-shaped appearance structure after the three layers of optical cement exposure of this microwave oscillator.Fig. 5 is the T-shaped grid scanning electron microscope diagram of this microwave oscillator.Fig. 6 is the transfer characteristic curve figure of this microwave oscillator.Fig. 7 is the output characteristic curve figure of this microwave oscillator.Fig. 8 is characteristic frequency and the maximum oscillation frequency curve chart of this microwave oscillator.
Claims (10)
1. a preparation method for composite channel MHEMT microwave oscillator, is characterized in that, comprises step as follows:
Step 1, epitaxial growth graded buffer layer, cache layer, the second channel layer, a channel layer, separator, barrier layer, etching stop layer, the first cap layers and the second cap layers successively on substrate layer, form the epitaxial mesa of sample;
Step 2, even glue photoetching protection epitaxial mesa; Adopt ion implantor to carry out ion implantation, make channel region form isolation; Utilize corrosive liquid to corrode the first cap layers and the second cap layers, the electric leakage of isolation top layer, forms the isolation table top of sample;
Step 3, even glue photoetching protective separation table top; Adopt electron beam evaporation platform evaporation source metal and leak metal, forming the source and drain ohmic contact of sample;
Step 4, adopts 3 layers of electron beam resist to sample, and double exposure, forms T-shaped grid structure after a developing process, and as the grid groove corrosion mask layer of sample;
Step 5, utilizes corrosive liquid to corrode etching stop layer, the first cap layers and the second cap layers, forms the grid groove of sample;
Step 6, utilizes electron beam evaporation platform to grow grid metals, carries out short annealing afterwards and makes grid metal and barrier layer fully contact formation to bury grid, the T-shaped metal gate of formation sample after peeling off;
Step 7, growth of passivation layer on sample, utilizes reactive ion etching device detection window, finally completes the preparation of device.
2. the preparation method of a kind of composite channel MHEMT microwave oscillator according to claim 1, is characterized in that, in step 2,3,4 and 7, all needs to carry out HMDS surface preparation process to sample before each photoetching.
3. the preparation method of a kind of composite channel MHEMT microwave oscillator according to claim 1, is characterized in that, in step 2, described corrosive liquid is citric acid and hydrogen peroxide mixed solution, and C
6h
8o
7: H
2o
2=1:1; In step 5, described corrosive liquid is rare salt, phosphoric acid and glacial acetic acid mixed solution, and HCl:H
3pO
4: CH
3cOOH:H
2o=1:1:2:2.
4. the preparation method of a kind of composite channel MHEMT microwave oscillator according to claim 1, is characterized in that, in step 3, source metal and leakage metal are respectively formed by stacking from bottom to top by Ni, AuGe, Ni and Au; In step 6, grid metal is formed by stacking from bottom to top by Pt, Ti, Pt and Au.
5. the preparation method of a kind of composite channel MHEMT microwave oscillator according to claim 1, is characterized in that, in step 4,3 layers of electron beam lithography from bottom to top glue is followed successively by PMMA4, MMA-EL9 and PMMA2.
6. the preparation method of a kind of composite channel MHEMT microwave oscillator according to claim 1, it is characterized in that, in step 6, anneal in nitrogen, its temperature is 300 DEG C, and the time is 30 seconds.
7., based on a kind of composite channel MHEMT microwave oscillator prepared by method described in claim 1, the active solid state device of this microwave oscillator is made up of the change component High Electron Mobility Transistor of gallium arsenide substrate; It is characterized in that: the change component High Electron Mobility Transistor of described gallium arsenide substrate is made up of substrate layer, graded buffer layer, cache layer, the first channel layer, the second channel layer, separator, barrier layer, etching stop layer, the first cap layers and the second cap layers from bottom to top successively; Drain electrode and source electrode divide the top being located at the second cap layers; Offer grid groove in first cap layers, the second cap layers and etching stop layer, the grid of T-shaped embeds in this grid groove, and the grid pin of grid contacts with barrier layer.
8. a kind of composite channel MHEMT microwave oscillator according to claim 7, is characterized in that: adopt Si δ to adulterate between barrier layer and separator.
9. a kind of composite channel MHEMT microwave oscillator according to claim 7, is characterized in that: the first channel layer is the In becoming In component
0.6ga
0.4as conducting channel, second links up the In that layer is change In component
0.7ga
0.3as conducting channel, the first channel layer and second is linked up layer and is formed composite conducting channel structure.
10. a kind of composite channel MHEMT microwave oscillator according to claim 7, is characterized in that, source metal and leakage metal are respectively formed by stacking from bottom to top by Ni, AuGe, Ni and Au; Grid metal is formed by stacking from bottom to top by Pt, Ti, Pt and Au.
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