CN110797399A - P-GaN ohmic contact electrode with low specific contact resistivity and preparation method and application thereof - Google Patents

P-GaN ohmic contact electrode with low specific contact resistivity and preparation method and application thereof Download PDF

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CN110797399A
CN110797399A CN201910943294.4A CN201910943294A CN110797399A CN 110797399 A CN110797399 A CN 110797399A CN 201910943294 A CN201910943294 A CN 201910943294A CN 110797399 A CN110797399 A CN 110797399A
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gan
layer
ohmic contact
annealing
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王玮
王宏兴
林芳
问峰
张明辉
陈根强
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract

The invention discloses a p-GaN ohmic contact electrode with low specific contact resistivity, a preparation method and application thereof, wherein the preparation method comprises the following steps: the p-GaN material layer is formed with a heavily doped p-GaN layer; a bottom layer contact metal layer is formed on the heavily doped p-GaN layer, and an upper layer cap metal layer is formed on the bottom layer contact metal layer; wherein the heavily doped p-GaN layer is an Mg ion implantation layer with Mg ion concentration not less than 1 × 1019cm‑3. The p-GaN ohmic contact electrode has ohmic contact characteristic of low contact resistivity.

Description

P-GaN ohmic contact electrode with low specific contact resistivity and preparation method and application thereof
Technical Field
The invention relates to the technical field of semiconductor materials and devices, in particular to a p-GaN ohmic contact electrode with low specific contact resistivity and a preparation method and application thereof.
Background
The first generation of Si and Ge semiconductors brought human beings into the information age, and at the same time, the intellectualization and informatization of electronic systems were also driven. The second generation semiconductors (GaAs, InP, MCT, etc.) bring optoelectronic devices, power electronic devices, radio frequency electronic devices, spatial radiation-resistant devices, etc. to our public, and have revolutionized the information fields of wireless communication, optical communication, etc.
The third generation semiconductor GaN has excellent semiconductor characteristics of wide forbidden band, high breakdown, high frequency and the like, compared with a Si-based semiconductor, the breakdown field strength of a GaN material is more than 10 times, and the excellent value of Baliga is more than 1580 times. Compared with other III-V semiconductor materials, the GaN-based heterojunction can generate two-dimensional electron gas with extremely high concentration through strong spontaneous polarization effect when being undoped, and is the first choice in third-generation semiconductor materials. The GaN material has wide application prospect in the fields of radio frequency microwave and power electronics due to the excellent performance.
However, the implementation of the above-described solution requires an ohmic contact electrode with excellent performance as a solid base. Because p-GaN material has a large work function (7.5eV), no proper metal forms excellent ohmic contact; the hole concentration of the Mg-doped p-GaN material is difficult to improve, and the specific ohmic contact resistivity of the p-GaN material is difficult to be made into 10 of the n-GaN material-6～10-8cm2The level of (c). The ohmic contact electrode system commonly used for p-GaN material at present is nickel/gold (Ni/Au), and the specific contact resistivity is 10-4～10-5·cm2Of the order of magnitude of (d).
In summary, a new p-GaN ohmic contact electrode with low specific contact resistivity is needed to further improve the ohmic contact characteristics of p-GaN.
Disclosure of Invention
The invention aims to provide a p-GaN ohmic contact electrode with low specific contact resistivity, a preparation method and an application thereof, so as to solve one or more technical problems. The p-GaN ohmic contact electrode has ohmic contact characteristic of low contact resistivity.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention relates to a p-GaN ohmic contact electrode with low specific contact resistivity, which comprises:
the p-GaN material layer is formed with a heavily doped p-GaN layer; a bottom layer contact metal layer is formed on the heavily doped p-GaN layer, and an upper layer cap metal layer is formed on the bottom layer contact metal layer;
wherein the heavily doped p-GaN layer is an Mg ion implantation layer with Mg ion concentration not less than 1 × 1019cm-3。
The invention is further improved in that the thickness of the heavily doped p-GaN layer is 1-10 nm.
The invention is further improved in that the bottom contact metal layer is 5-50 nm thick and is made of Ni, Ir, ITO, TiN or NiN.
The invention is further improved in that the thickness of the upper-layer cap metal layer is 50-1000 nm, and the upper-layer cap metal layer is made of one or more of Al, Au, Pt and Pd.
The invention is further improved in that the specific contact resistivity formed by the ohmic contact electrode is less than or equal to 10-5Ω·cm。
The application of the p-GaN ohmic contact electrode with low specific contact resistivity is applied to electronic components; the electronic component is a detector, a Schottky diode, a thyristor, a field effect transistor, a light emitting diode, a laser diode, an MEMS device or a biosensor.
The invention relates to a preparation method of a p-GaN ohmic contact electrode with low specific contact resistivity, which comprises the following steps:
step 1, injecting Mg ions into a cleaned and dried p-GaN material layer, and carrying out high-temperature annealing treatment to form a heavily doped p-GaN layer on the p-GaN material layer, wherein the heavily doped p-GaN layer is an Mg ion injection layer; wherein, in the p-GaN material layer, the Mg ion concentration in the heavily doped p-GaN layer is more than or equal to 1 × 1019cm-3；
Step 2, depositing a bottom layer contact metal material on the heavily doped p-GaN layer obtained in the step 1 to obtain a bottom layer contact metal layer; depositing an upper-layer cap metal material on the bottom-layer contact metal layer to obtain an upper-layer cap metal layer; and (4) annealing to form ohmic contact with preset specific contact resistivity.
The further improvement of the invention is that in the step 1, the step of cleaning and drying the p-GaN material layer specifically comprises the following steps: cleaning the p-GaN material by using standard cleaning organic and inorganic cleaning processes, and N after cleaning2And (5) drying.
The further improvement of the invention is that in the step 1, an ion implanter is adopted for implantation when Mg ions are implanted, the ion implantation energy is 30-300 keV, and the implantation dosage is 1013～1016cm-2(ii) a The high-temperature annealing treatment method is rapid annealing heat treatment or furnace tube type annealing heat treatment, and the annealing atmosphere is N2Ar, and the like, wherein the annealing temperature is 600-1100 ℃, and the annealing time is 1-60 min.
The invention has the further improvement that in the step 2, the deposition mode is thermal evaporation, electron beam evaporation or sputtering; the annealing treatment method is rapid annealing heat treatment or furnace tube type annealing heat treatment, and the annealing atmosphere is N2、O2And Ar in a single or mixed gas atmosphere, wherein the annealing temperature is 300-600 ℃, and the annealing time is 1-60 minutes.
Compared with the prior art, the invention has the following beneficial effects:
in the p-GaN ohmic contact electrode, a heavily doped layer with a plurality of nanometers is formed on the surface of the p-GaN material by utilizing the injection and activation treatment of Mg ions, so that the specific contact resistivity of the p-GaN and metal can be reduced, and the electrical performance of an electronic element is improved. Specifically, the heavily doped p-GaN layer is an Mg ion implantation layer with Mg ion concentration not less than 1 × 1019cm-3And obtaining a heavily doped p-GaN layer through annealing, and forming ohmic contact with a lower contact resistivity than the contact resistivity by using a tunneling effect generated by a high hole concentration in the heavily doped p-GaN layer.
In the invention, the thickness of the heavily doped p-GaN layer is 1-10 nm; the high hole concentration of the heavily doped p-GaN layer formed by Mg ion injection and activation treatment is beneficial to tunneling of current carriers, and ohmic contact with lower contact resistivity is formed; the tunneling effect does not need to be too thick, a few nanometers being sufficient, which would increase the contact resistance.
The preparation method is used for preparing the p-GaN ohmic contact electrode with low specific contact resistivity, and the heavily doped layer with a few nanometers is formed on the surface of the p-GaN material by utilizing the injection and activation treatment of Mg ions and high-temperature annealing, so that the specific contact resistivity of the p-GaN and metal can be reduced, and good ohmic contact is formed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art are briefly introduced below; it is obvious that the drawings in the following description are some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 is a schematic structural diagram of a p-GaN ohmic contact electrode with low specific contact resistivity according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for manufacturing a p-GaN ohmic contact electrode with low specific contact resistivity according to an embodiment of the invention;
in FIG. 1, a layer of 1, p-GaN material; 2. heavily doping the p-GaN layer; 3. a bottom layer contacting the metal layer; 4. and an upper cap metal layer.
Detailed Description
In order to make the purpose, technical effect and technical solution of the embodiments of the present invention clearer, the following clearly and completely describes the technical solution of the embodiments of the present invention with reference to the drawings in the embodiments of the present invention; it is to be understood that the described embodiments are only some of the embodiments of the present invention. Other embodiments, which can be derived by one of ordinary skill in the art from the disclosed embodiments without inventive faculty, are intended to be within the scope of the invention.
Referring to fig. 1, a p-GaN ohmic contact electrode with low specific contact resistivity according to an embodiment of the present invention includes, from bottom to top: the structure comprises a p-GaN material layer 1, a heavily doped p-GaN layer 2(Mg ion injection layer), a bottom contact metal layer 3 and an upper cap metal layer 4.
The p-GaN material layer 1 is made of p-GaN material which is Mg-doped GaN with Mg doping concentration of 1 × 1018～1×1019cm-3Obtained by MOCVD epitaxial doping.
An Mg ion injection layer (heavy doping) is formed or embedded on the surface of the p-GaN material layer 1, the thickness of the Mg ion injection layer, namely the Mg ion injection area, is 1-10 nm, and the concentration of Mg ions is more than or equal to 1 multiplied by 1019cm-3. Specifically, the heavily doped p-GaN layer 2 may be an Mg ion implantation layer with Mg ion concentration of 1 × 10 or more19cm-3And obtaining a heavily doped p-GaN layer 2 by annealing, and forming ohmic contact with a lower contact resistivity than that of the contact by using a tunneling effect generated by a high hole concentration in the heavily doped p-GaN layer 2.
The bottom contact metal layer 3 has a thickness of 5-50 nm and is made of Ni, Ir, ITO, TiN or NiN.
The thickness of the upper cap metal layer 4 is 50-1000 nm, and the material is one or more of Al, Au and Pd in Pt.
The p-GaN ohmic contact electrode with low specific contact resistivity of the embodiment of the invention forms the specific contact resistivity less than or equal to 10-5Ω·cm。
Referring to fig. 2, a method for manufacturing a p-GaN ohmic contact electrode with low specific contact resistivity according to an embodiment of the present invention includes the following steps:
1) cleaning the p-GaN material by using a standard cleaning organic and inorganic cleaning process, and N after cleaning2Drying;
2) injecting Mg ions into the p-GaN material cleaned in the step 1) by using an ion implanter, and carrying out high-temperature annealing treatment to form a heavily doped p-GaN region, namely an Mg ion injection layer;
3) and sequentially depositing bottom layer contact metal and upper layer cap metal on the surface of the heavily doped p-GaN region, and annealing to form good ohmic contact.
Preferably, the ion implantation energy in step 2) is 30-300 keV, and the implantation dose is 1013～1016cm-2(ii) a The high-temperature annealing treatment method is rapid annealing heat treatment or furnace tube type annealing heat treatment, and the annealing atmosphere is N2Ar and the like, the annealing temperature is 600-1100 ℃, and the annealing time is 1-60 minutes.
Preferably, the thickness of the p-GaN heavily doped layer (Mg ion implantation layer) in the step 2) is 1-10 nm, and the doping concentration is more than or equal to 1 multiplied by 1019cm-3。
Preferably, the deposition mode in the step 3) is thermal evaporation, electron beam evaporation, sputtering and the like, the thickness of the bottom contact metal layer 3 is 5-50 nm, the material is Ni, Ir, ITO, TiN or NiN and the like, the thickness of the upper cap metal layer 4 is 50-1000 nm, and the material is one or more combinations of Al, Au, Pt and Pd; the annealing treatment method is rapid annealing heat treatment or furnace tube type annealing heat treatment, and the annealing atmosphere is N2、O2Ar or the mixed gas thereof, the annealing temperature is 300-600 ℃, and the annealing time is 1-60 minutes.
The p-GaN ohmic contact electrode with low specific contact resistivity is suitable for electronic elements, wherein the electronic elements are probes, Schottky diodes, thyristors, field effect transistors, light emitting diodes, laser diodes, MEMS devices or biosensors.
Example 1
The preparation method of the p-GaN ohmic contact electrode with low specific contact resistivity comprises the following steps:
1) spin-coating a layer of AZ5214 photoresist on the surface of a cleaned p-GaN material, baking a p-GaN sample spin-coated with the photoresist for 90 seconds at 95 ℃, performing ultraviolet lithography exposure for 4 seconds by using a designed mask, developing for 30 seconds to remove the exposed photoresist, and leaving an ion implantation window;
2) placing the p-GaN sample after photoetching in an ion implanter, selecting the implantation energy to be 300keV and the implantation dosage to be 1013cm-2. Soaking the injected p-GaN sample in N-methylpyrrolidone (NMP) solution, and removing residual photoresist in water bath at 120 ℃ for 30 minutes;
3) placing the p-GaN sample after Mg ion implantation in a tube annealing furnace, and setting the atmosphere to be nitrogenGas flow is 2L/min, temperature rising rate is 10 ℃/s, annealing temperature is 1100 ℃, and annealing time is 1 minute, so that Mg ions injected into the p-GaN material are activated to form a thin heavily doped p-GaN layer, and a sample for forming heavily doped p-GaN is obtained; the Mg ion concentration in the heavily doped p-GaN layer is 1 multiplied by 1021cm-3。
4) Cleaning a heavily doped p-GaN sample, spin-coating a layer of AZ5214 photoresist on the surface of the heavily doped p-GaN sample, baking the p-GaN sample spin-coated with the photoresist for 90 seconds at 95 ℃, performing ultraviolet lithography exposure for 4 seconds by using a designed mask plate, developing for 30 seconds to remove the exposed photoresist, and leaving a window for depositing contact metal;
5) placing the photoetched p-GaN sample in an electron beam evaporation device, and vacuumizing the background to 5 x 10-4And after Pa, depositing a bottom layer contact metal Ni of 50nm and an upper layer cap metal Au of 1000nm on the surface of the sample in sequence. Taking out the deposited p-GaN sample, soaking the p-GaN sample in N-methylpyrrolidone (NMP) solution, carrying out water bath at 120 ℃ for 5 minutes, and then ultrasonically stripping off the metal outside an exposure area to obtain a contact metal layer;
6) and (3) placing the sample containing the ohmic contact metal in a rapid annealing furnace, setting the atmosphere as oxygen, setting the flow rate as 3L/min, setting the temperature rise rate as 30 ℃/s, the annealing temperature as 600 ℃, and setting the annealing time as 1 minute to form the ohmic contact with low specific contact resistivity.
Example 2
The preparation method of the p-GaN ohmic contact electrode with low specific contact resistivity comprises the following steps:
1) spin-coating a layer of AZ5214 photoresist on the surface of a cleaned p-GaN material, baking a p-GaN sample spin-coated with the photoresist for 90 seconds at 95 ℃, performing ultraviolet lithography exposure for 4 seconds by using a designed mask, developing for 30 seconds to remove the exposed photoresist, and leaving an ion implantation window;
2) placing the p-GaN sample after photoetching in an ion implanter, selecting the implantation energy to be 30keV and the implantation dosage to be 1016cm-2. Soaking the injected p-GaN sample in a mixed solution of concentrated sulfuric acid and hydrogen peroxide for 60 minutes to remove residual photoresist;
3) placing the p-GaN sample subjected to Mg ion injection in a rapid annealing furnace, setting the atmosphere to be nitrogen, the flow rate to be 3L/min, the temperature rising rate to be 30 ℃/s, the annealing temperature to be 900 ℃, and the annealing time to be 60 minutes, so that Mg ions injected into the p-GaN material are activated to form a thin heavily doped p-GaN layer, and obtaining a sample for forming heavily doped p-GaN; the Mg ion concentration in the heavily doped p-GaN layer is 1 multiplied by 1019cm-3。
4) Cleaning a heavily doped p-GaN sample, spin-coating a layer of AZ5214 photoresist on the surface of the heavily doped p-GaN sample, baking the p-GaN sample spin-coated with the photoresist for 90 seconds at 95 ℃, performing ultraviolet lithography exposure for 4 seconds by using a designed mask plate, developing for 30 seconds to remove the exposed photoresist, and leaving a window for depositing contact metal;
5) placing the photoetched p-GaN sample in an electron beam evaporation device, and vacuumizing the background to 5 x 10-4And after Pa, sequentially depositing a bottom layer contact metal ITO (indium tin oxide) 5nm and an upper layer cap metal Au 200nm on the surface of the sample. Taking out the deposited p-GaN sample, soaking the p-GaN sample in N-methylpyrrolidone (NMP) solution, carrying out water bath at 120 ℃ for 5 minutes, and then ultrasonically stripping off the metal outside an exposure area to obtain a contact metal layer;
6) and (3) placing the sample containing the ohmic contact metal in a tubular annealing furnace, setting the atmosphere to be mixed gas of nitrogen and oxygen, setting the flow rate to be 3L/min, the temperature rise rate to be 30 ℃/s, the annealing temperature to be 300 ℃, and the annealing time to be 60 minutes to form the ohmic contact with low specific contact resistivity.
Example 3
The preparation method of the p-GaN ohmic contact electrode with low specific contact resistivity comprises the following steps:
1) spin-coating a layer of KXN5735-LO photoresist on the surface of a cleaned p-GaN material, baking a p-GaN sample spin-coated with the photoresist for 90 seconds at the temperature of 95 ℃, performing ultraviolet lithography exposure for 2 seconds by using a designed mask plate, developing for 25 seconds to remove the exposed photoresist, and leaving an ion implantation window;
2) placing the p-GaN sample after photoetching in an ion implanter, selecting the implantation energy to be 50keV and the implantation dosage to be 1015cm-2. Will be provided withSoaking the injected p-GaN sample in a mixed solution of concentrated sulfuric acid and hydrogen peroxide for 60 minutes to remove residual photoresist;
3) placing the p-GaN sample subjected to Mg ion injection into a tubular annealing furnace, setting the atmosphere to be nitrogen, the flow rate to be 3L/min, the temperature rising rate to be 30 ℃/s, the annealing temperature to be 600 ℃ and the annealing time to be 60 minutes, so that Mg ions injected into the p-GaN material are activated to form a thin heavily doped p-GaN layer, and obtaining a sample for forming heavily doped p-GaN; the Mg ion concentration in the heavily doped p-GaN layer is 5 multiplied by 1019cm-3。
4) Cleaning a heavily doped p-GaN sample, spin-coating a layer of KXN5735-LO photoresist on the surface of the heavily doped p-GaN sample, baking the p-GaN sample spin-coated with the photoresist for 90 seconds at 95 ℃, performing ultraviolet lithography exposure for 2s by using a designed mask, developing for 25s to remove the exposed photoresist, and leaving a window for depositing contact metal;
5) placing the photoetched p-GaN sample in an electron beam evaporation device, and vacuumizing the background to 5 x 10-4And after Pa, depositing a bottom layer contact metal TiN of 20nm and an upper layer cap metal Pt/Au of 50/100nm on the surface of the sample in sequence. Taking out the deposited p-GaN sample, soaking the p-GaN sample in an acetone solution, carrying out water bath at 70 ℃ for 5 minutes, and then ultrasonically stripping off the metal outside the exposure area to obtain a contact metal layer;
6) and (3) placing the sample containing the ohmic contact metal in a tubular annealing furnace, setting the atmosphere to be mixed gas of nitrogen and oxygen, setting the flow rate to be 3L/min, the temperature rise rate to be 30 ℃/s, the annealing temperature to be 500 ℃ and the annealing time to be 30 minutes, and forming the ohmic contact with low specific contact resistivity.
Example 4
The other steps of the method for preparing the p-GaN ohmic contact electrode of the embodiment of the invention are the same as those of the embodiment 1, and the difference is that the prepared electrode comprises the following components: the doping concentration of Mg in the p-GaN material layer is 1 multiplied by 1018cm-3(ii) a The thickness of the heavily doped p-GaN layer is 1 nm; the thickness of the bottom contact metal layer is 50nm, and the material of the bottom contact metal layer is Ir. The thickness of the upper-layer cap metal layer is 1000nm, and the upper-layer cap metal layer is made of Pd.
Example 5
Hair brushThe other steps of the method for manufacturing a p-GaN ohmic contact electrode of the present example are the same as those of example 1, except that: the doping concentration of Mg in the p-GaN material layer is 1 multiplied by 1019cm-3(ii) a The thickness of the heavily doped p-GaN layer is 10 nm.
Example 6
The other steps of the method for preparing the p-GaN ohmic contact electrode of the embodiment of the invention are the same as those of the embodiment 1, and the difference is that the prepared electrode comprises the following components: the doping concentration of Mg in the p-GaN material layer is 1 multiplied by 1019cm-3(ii) a The thickness of the heavily doped p-GaN layer is 5 nm.
In summary, in view of the problems in the prior art, the p-GaN ohmic contact electrode of the present invention utilizes the injection and activation of Mg ions to form a heavily doped layer of several nanometers on the surface of the p-GaN material to reduce the specific contact resistivity of p-GaN and metal and improve the electrical performance of the electronic device. The preparation method and the electronic element using the ohmic contact electrode structure and the preparation method can reduce the specific contact resistivity of ohmic contact and improve the electrical performance of the electronic element.
Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art can make modifications and equivalents to the embodiments of the present invention without departing from the spirit and scope of the present invention, which is set forth in the claims of the present application.

Claims (10)

1. A p-GaN ohmic contact electrode with low specific contact resistivity, comprising:
a p-GaN material layer (1), wherein a heavily doped p-GaN layer (2) is formed on the p-GaN material layer (1); a bottom layer contact metal layer (3) is formed on the heavily doped p-GaN layer (2), and an upper layer cap metal layer (4) is formed on the bottom layer contact metal layer (3);
wherein the heavily doped p-GaN layer (2) is an Mg ion implantation layer with Mg ion concentration not less than 1 × 1019cm-3。
2. The p-GaN ohmic contact electrode with low specific contact resistivity as claimed in claim 1, wherein the heavily doped p-GaN layer (2) has a thickness of 1-10 nm.
3. The p-GaN ohmic contact electrode with low specific contact resistance according to claim 1, wherein the bottom contact metal layer (3) has a thickness of 5-50 nm and is made of Ni, Ir, ITO, TiN or NiN.
4. The p-GaN ohmic contact electrode with low specific contact resistance according to claim 1, wherein the upper cap metal layer (4) has a thickness of 50-1000 nm and is made of one or more of Al, Au, Pt and Pd.
5. The p-GaN ohmic contact electrode with low specific contact resistivity as claimed in claim 1, wherein the ohmic contact electrode forms a specific contact resistivity of 10 or less-5Ω·cm。
6. Use of the low specific contact resistivity p-GaN ohmic contact electrode according to any one of claims 1 to 5 for an electronic component; the electronic component is a detector, a Schottky diode, a thyristor, a field effect transistor, a light emitting diode, a laser diode, an MEMS device or a biosensor.
7. A preparation method of a p-GaN ohmic contact electrode with low specific contact resistivity is characterized by comprising the following steps:
step 1, injecting Mg ions into a cleaned and dried p-GaN material layer (1), and carrying out high-temperature annealing treatment to form a heavily doped p-GaN layer (2) on the p-GaN material layer (1), wherein the heavily doped p-GaN layer (2) is an Mg ion injection layer; wherein, in the heavily doped p-GaN layer (2), the concentration of Mg ions is more than or equal to 1 × 1019cm-3；
Step 2, depositing a bottom layer contact metal material on the heavily doped p-GaN layer (2) obtained in the step 1 to obtain a bottom layer contact metal layer (3); depositing an upper-layer cap metal material on the bottom-layer contact metal layer (3) to obtain an upper-layer cap metal layer (4); and (4) annealing to form ohmic contact with preset specific contact resistivity.
8. The method for preparing a p-GaN ohmic contact electrode with low specific contact resistivity as claimed in claim 7, wherein the step of cleaning and blow-drying the p-GaN material layer in step 1 specifically comprises: cleaning the p-GaN material by using standard cleaning organic and inorganic cleaning processes, and N after cleaning2And (5) drying.
9. The method for preparing a p-GaN ohmic contact electrode with low specific contact resistivity as claimed in claim 7, wherein in step 1, an ion implanter is used for implanting Mg ions, the ion implantation energy is 30-300 keV, and the implantation dose is 10 keV13～1016cm-2；
The high-temperature annealing treatment method is rapid annealing heat treatment or furnace tube type annealing heat treatment, and the annealing atmosphere is N2Ar, and the like, wherein the annealing temperature is 600-1100 ℃, and the annealing time is 1-60 min.
10. The method for preparing a p-GaN ohmic contact electrode with low specific contact resistivity as claimed in claim 7, wherein, in step 2,
the deposition mode is thermal evaporation, electron beam evaporation or sputtering;
the annealing treatment method is rapid annealing heat treatment or furnace tube type annealing heat treatment, and the annealing atmosphere is N2、O2And Ar in a single or mixed gas atmosphere, wherein the annealing temperature is 300-600 ℃, and the annealing time is 1-60 minutes.
CN201910943294.4A 2019-09-30 2019-09-30 P-GaN ohmic contact electrode with low specific contact resistivity and preparation method and application thereof Pending CN110797399A (en)

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Application publication date: 20200214