CN109860044A - A kind of p-type GaN epitaxy piece of high ohmic contact characteristic and preparation method thereof - Google Patents
A kind of p-type GaN epitaxy piece of high ohmic contact characteristic and preparation method thereof Download PDFInfo
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Abstract
A kind of p-type GaN epitaxy piece of high ohmic contact characteristic and preparation method thereof, preparation method includes: step 1: preparing substrate (10)；Step 2: the GaN layer of magnesium is mixed in epitaxial growth on substrate (10)；Step 3: annealing to the GaN layer for mixing magnesium, the magnesium acceptor in the GaN layer of magnesium is mixed in activation, so that the GaN layer for mixing magnesium is changed into p-type GaN layer (11)；Step 4: the epitaxial growth p on p-type GaN layer (11)++Type GaN cap rock (12).Pass through the p of the regrowth heavy doping in p-type GaN layer++Type GaN cap rock, and the p of heavy doping++Type GaN cap rock reduces the ohmic contact resistance that p-type material is contacted with metal without high annealing so as to improve epitaxial wafer ohmic contact layer quality.
Description
Technical field
This disclosure relates to technical field of semiconductor device, and in particular, to outside a kind of p-type GaN of high ohmic contact characteristic
Prolong piece and preparation method thereof.
Background technique
GaN base material is also referred to as III-nitride material, and (including InN, GaN, AlN, InGaN, AlGaN etc., forbidden band is wide
Degree range is 0.7-6.2eV), spectrum covers near-infrared to deep ultraviolet band, it is considered to be the third after Si, GaAs
For semiconductor, there is important application value in opto-electronics.The nineties in last century, as two-step growth method and p-type are annealed
The development of Activiation method, GaN base material and device have obtained extensive concern.GaN base laser has been successfully applied to swash at present
The fields such as optical illumination, laser projection, laser television, industrial processes, however compared with the materials such as GaAs, InP, GaN base laser
There are still photoelectric conversion efficiencies it is low, the service life is short the problems such as, this is big with metal ohmic contact resistance with p-type GaN base material and makes
It is serious related at voltage height, fever.P-type GaN base material Ohmic contact is difficult to realize that main cause has: (1) big without work function
In the suitable metal material of p-type GaN；(2) resistivity of p-type GaN itself is high, and hole concentration is low, is difficult to realize effective tunnel
It wears.In the prior art, it needs to carry out it Mg impurity in high-temperature annealing activation p-type material, high temperature after the completion of epitaxial wafer growth
Annealing temperature generally uses 600 DEG C -900 DEG C of temperature, can generate many defects at this time, deteriorates p-type characteristic.
For these problems, the disclosure in epitaxial wafer preparation process annealing process and Material growth technique change
Into to achieve the purpose that reduce ohmic contact resistance rate between p-type material and metal.
Summary of the invention
(1) technical problems to be solved
The disclosure provides a kind of p-type GaN epitaxy piece and preparation method thereof of high ohmic contact characteristic, at least solves the above skill
Art problem.
(2) technical solution
Present disclose provides a kind of preparation methods of the p-type GaN epitaxy piece of high ohmic contact characteristic, comprising: step 1: system
Standby substrate；Step 2: the GaN layer of magnesium is mixed in epitaxial growth over the substrate；Step 3: it anneals to the GaN layer for mixing magnesium,
The magnesium acceptor in the GaN layer of magnesium is mixed described in activation, so that the GaN layer for mixing magnesium is changed into p-type GaN layer；Step 4: in the p
Epitaxial growth p in type GaN layer++Type GaN cap rock.
Optionally, the p-type GaN layer with a thickness of 30-1000 μm, hole concentration is 1 × 1017cm-3-1×1018cm-3。
Optionally, the p++Type GaN cap rock with a thickness of 5-20nm, the p++The doping concentration of magnesium is in type GaN cap rock
1×1019cm-3-1×1021cm-3。
Optionally, the temperature annealed in the step 3 is 600-900 DEG C, and the time of annealing is 1-30min, the ring of annealing
Border is the gaseous mixture of nitrogen or nitrogen and oxygen.
Optionally, the p++The growth temperature of type GaN cap rock is 700-1000 DEG C.
Optionally, the substrate is GaN single layer structure or light emitting diode construction or laser structure.
Optionally, the preparation method further include: step 5: in the p++Evaporation metal electrode on type GaN cap rock, goes forward side by side
Row low-temperature annealing.
Optionally, the material of the metal electrode is Ni/Au or ITO or Pb/Pt/Au.
Optionally, the temperature annealed in the step 5 is 400-600 DEG C, and the time of annealing is 1-10min, the ring of annealing
Border is the gaseous mixture of nitrogen or nitrogen and oxygen.
The disclosure additionally provides a kind of p-type GaN epitaxy piece of high ohmic contact characteristic, comprising: substrate；P-type GaN layer, outside
Prolong growth over the substrate, the p-type GaN layer has been activated；p++Type GaN cap rock, epitaxial growth in the p-type GaN layer,
The p++The doping concentration of magnesium is 1 × 10 in type GaN cap rock19cm-3-1×1021cm-3, and the p++Type GaN cap rock is not swashed
It is living.
(3) beneficial effect
The p-type GaN epitaxy piece of high ohmic contact characteristic and preparation method thereof that the disclosure provides has below beneficial to effect
Fruit:
(1) by improving annealing process and Material growth technique in p-type GaN epitaxy piece preparation process, in p-type GaN layer
After the completion of growth, high annealing, the p of regrowth heavy doping are carried out first++Type GaN cap rock, connects so as to improve ohm of epitaxial wafer
Contact layer quality reduces epitaxial wafer and metal ohmic contact resistivity；
(2) prepared by the p-type material and metal contact layer for being applied to blue-green light LED and laser structure, especially
Applied to the GaN base laser device under high current density, the electro-optical efficiency of device can be improved, reduce ohmic contact layer
Degeneration probability, the reliability for improving device and aging characteristics and the luminous efficiency for improving device etc..
Detailed description of the invention
Fig. 1 diagrammatically illustrates the preparation side of the p-type GaN epitaxy piece of the high ohmic contact characteristic of embodiment of the present disclosure offer
The flow chart of method.
The structure that Fig. 2 diagrammatically illustrates the p-type GaN epitaxy piece of the high ohmic contact characteristic of embodiment of the present disclosure offer is shown
It is intended to.
Fig. 3 (a)-(c) respectively illustrates the structural schematic diagram of the substrate of embodiment of the present disclosure offer.
Fig. 4 shows the P of embodiment of the present disclosure offer++The specific contact resistivity that type GaN cap rock is contacted with Ni/Au metal electrode
The rule that rate changes with annealing temperature.
Description of symbols:
10- substrate；11-p type GaN layer；12-p++Type GaN cap rock；101- sapphire layer；102- low temperature buffer layer；103- is non-
Adulterate GaN template layer；104-n doped high temperature GaN layer；1001- sapphire layer；1002- low temperature buffer layer；The undoped GaN of 1003-
Template layer；1004-n doped high temperature GaN layer；The undoped mqw active layer of 1005-；1006-p adulterates AlGaN electronic barrier layer；
10001- sapphire layer；10002- low temperature buffer layer；The undoped GaN template layer of 10003-；10004-n doped high temperature GaN layer；
10005-n adulterates AlGaN limiting layer；The undoped lower waveguide layer of 10006-；The undoped mqw active layer of 10007-；10008-p
Adulterate AlGaN electronic barrier layer；The undoped upper ducting layer of 10009-；10010-p adulterates AlGaN limiting layer.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
Fig. 1 diagrammatically illustrates the preparation side of the p-type GaN epitaxy piece of the high ohmic contact characteristic of embodiment of the present disclosure offer
The flow chart of method.Fig. 2 diagrammatically illustrates the knot of the p-type GaN epitaxy piece of the high ohmic contact characteristic of embodiment of the present disclosure offer
Structure schematic diagram.Fig. 3 (a)-(c) respectively illustrates the structural schematic diagram of the substrate of embodiment of the present disclosure offer.In conjunction with Fig. 2 and Fig. 3
(a)-(c), the preparation method described in Fig. 1 are described in detail, which includes:
Step 1: preparing substrate 10.
In step 1, in metal-organic chemical vapor deposition equipment (Metal-organic Chemical Vapor
Deposition, MOCVD) growth substrates in equipment or molecular beam epitaxy (Molecular Beam Epitaxy, MBE) equipment
10, growing method is conventional method.
Substrate 10 for GaN single layer structure or light emitting diode construction or can swash by various structures, specifically
Light device structure.Fig. 3 (a) shows the structural schematic diagram that substrate 10 is p-type GaN single layer structure, and substrate 10 includes sapphire at this time
Layer 101, low temperature buffer layer 102, undoped GaN template layer 103 and n doped high temperature GaN layer 104.Fig. 3 (b) shows substrate 10
For the structural schematic diagram of light emitting diode construction, at this time substrate 10 include sapphire layer 1001, it is low temperature buffer layer 1002, undoped
GaN template layer 1003, n doped high temperature GaN layer 1004, undoped mqw active layer 1005 and p adulterate AlGaN electronic barrier layer
1006.Fig. 3 (c) show substrate 10 be laser structure structural schematic diagram, at this time substrate 10 include sapphire layer 10001,
Low temperature buffer layer 10002, undoped GaN template layer 10003, n doped high temperature GaN layer 10004, n adulterate AlGaN limiting layer
10005, undoped lower waveguide layer 10006, undoped mqw active layer 10007, p doping AlGaN electronic barrier layer 10008,
Undoped upper ducting layer 10009 and p adulterate AlGaN limiting layer 10010.
Step 2: the GaN layer of magnesium is mixed in epitaxial growth on substrate 10.
In step 2, one layer of the epitaxial growth GaN layer for mixing magnesium on substrate 10, wherein this mixes the growth of the GaN layer of magnesium
Temperature is 900-1000 DEG C, with a thickness of 30-1000 μm.
Step 3: annealing to the GaN layer for mixing magnesium, the magnesium acceptor in the GaN layer of magnesium is mixed in activation, so that mixing the GaN layer of magnesium
It is changed into p-type GaN layer 11.
In step 3, the GaN layer for mixing magnesium is annealed at high temperature, so that this mixes magnesium acceptor's quilt in the GaN layer of magnesium
Activation.
Specifically, it is 600- which, which can select furnace annealing mode or the outer annealing way of furnace, the temperature of annealing,
900 DEG C, the time of annealing is 1-30min, and the environment of annealing is the gaseous mixture of nitrogen or nitrogen and oxygen.
In the present embodiment, it should be noted that the purpose annealed in step 3 be in order to make magnesium hydride-complex decompose, from
And realize effective activation of magnesium acceptor, and therefore, if in substrate 10 including p-type AlGaN material (such as substrate 10 is laser structure),
It needs to properly increase the temperature of annealing at this time, and the time of annealing is appropriately extended.
In the present embodiment, the hole concentration of the p-type GaN layer 11 obtained after annealing is 1 × 1017cm-3-1×1018cm-3,
With a thickness of 30-1000 μm.
Step 4: the epitaxial growth p in p-type GaN layer 11++Type GaN cap rock 12.
In step 4, the epitaxial structure (i.e. substrate 10 and p-type GaN layer 11) after annealing is secondary outer in MOCVD device
Prolong the p of growth heavy doping++Type GaN cap rock 12, growth temperature is 700-1000 DEG C, to form complete epitaxial wafer device junction
Structure, wherein p++12 epitaxial growth of type GaN cap rock is in p-type GaN layer 11.
Specifically, the p of epitaxial growth++The doping concentration of magnesium is higher than the doping of magnesium in p-type GaN layer 11 in type GaN cap rock 12
Concentration, the p++The doping concentration of magnesium is 1 × 10 in type GaN cap rock 1219cm-3-1×1021cm-3, with a thickness of 5-20nm.
The p of epitaxial growth heavy doping++After type GaN cap rock 12, high-temperature annealing process is no longer carried out, this is because heavy doping
p++It is that carrier passes through variable stroke jump in impurity energy level that the principle of Ohmic contact is formed between type GaN cap rock 12 and metal electrode
Conduction is realized, so the p of heavy doping++Type GaN cap rock 12 does not need annealing activation.And for the p of heavy doping++Type GaN cap rock
For, higher annealing temperature can be in the p of the heavy doping++Additional defect is generated in type GaN cap rock, and it is special to deteriorate Ohmic contact
Property.Therefore, the step of high annealing, is advanceed to the p of heavy doping by the disclosure++It, at this time both can be with before type GaN cap rock 12 is grown
By activating the GaN layer for mixing magnesium to obtain good electrology characteristic, the p of heavy doping also can protect++Type GaN cap rock 12, favorably
In the p of the heavy doping++Good ohmic contact characteristic is formed between type GaN cap rock 12 and metal electrode, reduces the work of device
Voltage improves the electro-optical efficiency of device.
In the embodiment of the present disclosure, in order to which the ohmic contact characteristic of the p-type GaN epitaxy piece to preparation is tested, the preparation
Method should also include:
Step 5: in p++Evaporation metal electrode on type GaN cap rock 12, and low-temperature annealing, wherein the temperature annealed is 400-
600 DEG C, the time of annealing is 1-10min, and the environment of annealing is the gaseous mixture of nitrogen or nitrogen and oxygen.
Specifically, the material of the metal electrode is Ni/Au or ITO or Pb/Pt/Au.
The disclosure additionally provides a kind of p-type GaN epitaxy piece of high ohmic contact characteristic, and structure can refer to Fig. 2.
The p-type GaN epitaxy piece of the high ohmic contact characteristic successively includes: substrate 10 from bottom to top；P-type GaN layer 11, extension
It is grown on substrate 10, wherein the p-type GaN layer 11 has been activated；p++Type GaN cap rock 12, epitaxial growth is in the p-type GaN layer
On 11, wherein the p++The doping concentration of magnesium is higher than the doping concentration of magnesium in p-type GaN layer 11, and the p in type GaN cap rock 12++
Type GaN cap rock 12 is not activated.
P-type GaN epitaxy piece of high ohmic contact characteristic in the disclosure and preparation method thereof, by device fabrication process
In annealing process and Material growth technique improved, i.e., after the completion of mixing the GaN layer epitaxial growth of magnesium, first progress high temperature
It anneals, then the p of regrowth heavy doping++Type GaN cap rock, and not to the p of heavy doping++Type GaN cap rock carries out high annealing,
So that preparation device on the basis of obtaining good electrology characteristic, in the p of heavy doping++Type GaN cap rock and metal electrode it
Between form good ohmic contact characteristic, and avoid additional defect.
It, not only can be in addition, the p-type GaN epitaxy piece and preparation method thereof of the high ohmic contact characteristic provided in the disclosure
For p-type GaN epitaxy piece and preparation method thereof, it may also be used for other III-V nitride p-type epitaxial wafers and preparation method thereof.
At this point, only p-type GaN material in the disclosure need to be changed to other p-type Group III-V nitride materials.
It is illustrated by taking p-type AlN epitaxial wafer as an example, preparation method includes: step 1: preparing substrate；Step 2: on substrate
The AlN layer of magnesium is mixed in epitaxial growth；Step 3: annealing to the AlN layer for mixing magnesium, the magnesium acceptor in the AlN layer of magnesium is mixed in activation, makes
The AlN layer that magnesium must be mixed is changed into AlN layers of p-type；Step 4: the epitaxial growth p on p-type AlN layer++Type AlN cap rock.The p being prepared
Type AlN epitaxial wafer successively includes: substrate, AlN layers of p-type and p from bottom to top++Type AlN cap rock.Outside other III-V nitride p-types
It is similar to the above method to prolong piece and preparation method thereof, which is not described herein again.
Fig. 4 shows the P of embodiment of the present disclosure offer++The specific contact resistivity that type GaN cap rock is contacted with Ni/Au metal electrode
The rule that rate changes with annealing temperature.Parameter ohmic contact resistance is for measuring Ohmic contact between p-type material and metal electrode
The quality of characteristic, parameter ohmic contact resistance is lower, and ohmic contact characteristic is better between p-type material and metal electrode.Refering to figure
4, it is known that with the reduction of annealing temperature, parameter ohmic contact resistance is gradually decreased, i.e., ohm between p-type material and metal electrode
Contact performance is better.The changing rule illustrates to reduce the Europe that annealing temperature can be obviously improved between p-type material and metal electrode
Nurse contact performance.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic, comprising:
Step 1: preparing substrate (10)；
Step 2: the GaN layer of magnesium is mixed in epitaxial growth on the substrate (10)；
Step 3: annealing to the GaN layer for mixing magnesium, the magnesium acceptor in the GaN layer of magnesium is mixed described in activation, so that described mix
The GaN layer of magnesium is changed into p-type GaN layer (11)；
Step 4: the epitaxial growth p on the p-type GaN layer (11)++Type GaN cap rock (12).
2. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 1, wherein the p-type
GaN layer (11) with a thickness of 30-1000 μm, hole concentration is 1 × 1017cm-3-1×1018cm-3。
3. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 1, wherein the p++Type
GaN cap rock (12) with a thickness of 5-20nm, the p++The doping concentration of magnesium is 1 × 10 in type GaN cap rock (12)19cm-3-1×
1021cm-3。
4. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 1, wherein the step
The temperature annealed in 3 is 600-900 DEG C, and the time of annealing is 1-30min, and the environment of annealing is nitrogen or nitrogen and oxygen
Gaseous mixture.
5. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 1, wherein the p++Type
The growth temperature of GaN cap rock (12) is 700-1000 DEG C.
6. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 1, wherein the substrate
It (10) is GaN single layer structure or light emitting diode construction or laser structure.
7. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 1, the preparation method
Further include:
Step 5: in the p++Evaporation metal electrode on type GaN cap rock (12), and carry out low-temperature annealing.
8. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 7, wherein the metal
The material of electrode is Ni/Au or ITO or Pb/Pt/Au.
9. the preparation method of the p-type GaN epitaxy piece of high ohmic contact characteristic according to claim 7, wherein the step
The temperature annealed in 5 is 400-600 DEG C, and the time of annealing is 1-10min, and the environment of annealing is nitrogen or nitrogen and oxygen
Gaseous mixture.
10. a kind of p-type GaN epitaxy piece of high ohmic contact characteristic, comprising:
Substrate (10)；
P-type GaN layer (11), on the substrate (10), the p-type GaN layer (11) has been activated for epitaxial growth；
p++Type GaN cap rock (12), epitaxial growth is on the p-type GaN layer (11), the p++Magnesium mixes in type GaN cap rock (12)
Miscellaneous concentration is 1 × 1019cm-3-1×1021cm-3, and the p++Type GaN cap rock (12) is not activated.
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|---|---|---|---|---|
| CN110797399A (en) * | 2019-09-30 | 2020-02-14 | 西安交通大学 | P-GaN ohmic contact electrode with low specific contact resistivity and preparation method and application thereof |
| CN111218720A (en) * | 2020-01-09 | 2020-06-02 | 西安交通大学 | Method for dehydrogenation activation of P-type nitride based on oxidative supercritical gas and application thereof |
| CN111326577A (en) * | 2020-03-05 | 2020-06-23 | 厦门市三安集成电路有限公司 | Preparation method of power device epitaxial structure and semiconductor epitaxial structure |
| CN113421917A (en) * | 2021-03-09 | 2021-09-21 | 广西飓芯科技有限责任公司 | Method for reducing specific contact resistivity of p-type III-V group semiconductor material and contact electrode |
| CN113964003A (en) * | 2021-10-09 | 2022-01-21 | 电子科技大学长三角研究院(湖州) | GaN photocathode with nanotube structure and preparation method thereof |
| CN114927394A (en) * | 2022-04-26 | 2022-08-19 | 电子科技大学 | GaN photocathode with modified nanometer pyramid structure and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008244160A (en) * | 2007-03-27 | 2008-10-09 | Toyoda Gosei Co Ltd | METHOD FOR FORMING ELECTRODE ON GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING p-TYPE GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR |
| CN101471408A (en) * | 2007-12-28 | 2009-07-01 | 北京大学 | Method for activating magnesium doping gallium nitride base material and LED P-type gallium nitride |
| CN102903615A (en) * | 2012-10-18 | 2013-01-30 | 中山大学 | Preparation method of p type GaN and AlGaN semiconductor material |
| CN103077964A (en) * | 2013-01-18 | 2013-05-01 | 中国科学院半导体研究所 | Material structure for improving ohmic contact of p-GaN film and preparation method thereof |
| CN104201256A (en) * | 2014-08-26 | 2014-12-10 | 中国科学院半导体研究所 | Preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials |
| CN104241464A (en) * | 2014-09-05 | 2014-12-24 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method increasing P-type gallium nitride doping concentration |
| CN104392916A (en) * | 2014-11-17 | 2015-03-04 | 中国科学院半导体研究所 | Device low-contact-resistivity p-GaN ohmic contact method |
| CN107919416A (en) * | 2016-08-25 | 2018-04-17 | 映瑞光电科技(上海)有限公司 | A kind of GaN base light emitting epitaxial structure and preparation method thereof |
-
2019
- 2019-01-31 CN CN201910103251.5A patent/CN109860044A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008244160A (en) * | 2007-03-27 | 2008-10-09 | Toyoda Gosei Co Ltd | METHOD FOR FORMING ELECTRODE ON GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING p-TYPE GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR |
| CN101471408A (en) * | 2007-12-28 | 2009-07-01 | 北京大学 | Method for activating magnesium doping gallium nitride base material and LED P-type gallium nitride |
| CN102903615A (en) * | 2012-10-18 | 2013-01-30 | 中山大学 | Preparation method of p type GaN and AlGaN semiconductor material |
| CN103077964A (en) * | 2013-01-18 | 2013-05-01 | 中国科学院半导体研究所 | Material structure for improving ohmic contact of p-GaN film and preparation method thereof |
| CN104201256A (en) * | 2014-08-26 | 2014-12-10 | 中国科学院半导体研究所 | Preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials |
| CN104241464A (en) * | 2014-09-05 | 2014-12-24 | 西安神光皓瑞光电科技有限公司 | Epitaxial growth method increasing P-type gallium nitride doping concentration |
| CN104392916A (en) * | 2014-11-17 | 2015-03-04 | 中国科学院半导体研究所 | Device low-contact-resistivity p-GaN ohmic contact method |
| CN107919416A (en) * | 2016-08-25 | 2018-04-17 | 映瑞光电科技(上海)有限公司 | A kind of GaN base light emitting epitaxial structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 李晓静 等: "《Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN》", 《CHIN. PHYS. B》 * |
Cited By (7)
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|---|---|---|---|---|
| CN110797399A (en) * | 2019-09-30 | 2020-02-14 | 西安交通大学 | P-GaN ohmic contact electrode with low specific contact resistivity and preparation method and application thereof |
| CN111218720A (en) * | 2020-01-09 | 2020-06-02 | 西安交通大学 | Method for dehydrogenation activation of P-type nitride based on oxidative supercritical gas and application thereof |
| CN111326577A (en) * | 2020-03-05 | 2020-06-23 | 厦门市三安集成电路有限公司 | Preparation method of power device epitaxial structure and semiconductor epitaxial structure |
| CN111326577B (en) * | 2020-03-05 | 2023-06-16 | 湖南三安半导体有限责任公司 | Preparation method of power device epitaxial structure and power device epitaxial structure |
| CN113421917A (en) * | 2021-03-09 | 2021-09-21 | 广西飓芯科技有限责任公司 | Method for reducing specific contact resistivity of p-type III-V group semiconductor material and contact electrode |
| CN113964003A (en) * | 2021-10-09 | 2022-01-21 | 电子科技大学长三角研究院(湖州) | GaN photocathode with nanotube structure and preparation method thereof |
| CN114927394A (en) * | 2022-04-26 | 2022-08-19 | 电子科技大学 | GaN photocathode with modified nanometer pyramid structure and preparation method thereof |
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Application publication date: 20190607 |