CN101615580A - Method for manufacturing GaAs-based MHEMT device with gate length of 200nm - Google Patents
Method for manufacturing GaAs-based MHEMT device with gate length of 200nm Download PDFInfo
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- CN101615580A CN101615580A CN200810115563A CN200810115563A CN101615580A CN 101615580 A CN101615580 A CN 101615580A CN 200810115563 A CN200810115563 A CN 200810115563A CN 200810115563 A CN200810115563 A CN 200810115563A CN 101615580 A CN101615580 A CN 101615580A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000001704 evaporation Methods 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
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- 238000005516 engineering process Methods 0.000 claims abstract description 12
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- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 230000007797 corrosion Effects 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims abstract description 6
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 4
- 239000010931 gold Substances 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000407 epitaxy Methods 0.000 claims description 12
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- 238000000576 coating method Methods 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
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Abstract
The invention discloses a method for manufacturing a GaAs-based MHEMT device with a gate length of 200nm, which comprises the following steps: preparing a source drain electrode on the MHEMT material epitaxial structure; carrying out corrosion isolation on an active region on the MHEMT material epitaxial structure with the source and drain electrodes prepared to form an isolation table; manufacturing a T-shaped gate with the thickness of 200nm by adopting a three-layer gluing process and utilizing an electron beam lithography technology, corroding a gate groove by adopting a citric acid solution, and evaporating Ti/Pt/Au as gate metal; photoetching and wiring, evaporating wiring metal Ti// Au, and soaking and stripping with acetone to finish the manufacture of the GaAs-based MHEMT device with the gate length of 200 nm. By utilizing the method, the GaAs-based MHEMT device with the T-shaped gate structure is manufactured, excellent direct current, high frequency and power performances are obtained, and a foundation is laid for further researching the high-performance GaAs-based MHEMT device.
Description
Technical field
The present invention relates to the compound semiconductor device technical field, be meant a kind of method of utilizing electron beam lithography to make the long GaAs base MHEMT of 200nm grid device especially.
Background technology
In recent years, the needs of microwave/millimeter wave high speed data transfer and broadband application are growing, high speed fibre transmission system (40Gbit/s) for example, microwave point-to-point radio communication system, Local Multipoint Distribution System, the satellite communication of Ka wave band, fields such as the automobile collision avoidance radar of 77GHz have greatly promoted the progress of microelectronic industry.
GaAs base pseudomorphic high electron mobility transistor (pseudomorphic high electronmobility transistor, PHEMT) and the InP based high electron mobility transistor (high electronmobilitytransistor HEMT) has been generally acknowledged in microwave/millimeter wave low noise, high power applications field to have very big advantage.
GaAs technology is comparatively ripe, and existing foundries (foundry) provides processing business.PHEMT raceway groove In component generally is no more than 25%, and the InP based hemts has higher electron mobility and two-dimensional electron gas density, so device performance is more more superior than GaAs base PHEMT because the In component of InGaAs raceway groove can reach 53%.Yet, the InP substrate more crisp frangible, chip size is little, the processes difficulty is big, cause being difficult to producing in enormous quantities, and the production cost costliness.
(metamorphic high electron mobilitytransistor MHEMT) is meant the epitaxial structure of grown InP based hemts on the GaAs substrate to GaAs base strain high electron mobility transistor.Resilient coating by the In content gradually variational slows down the stress between GaAs substrate and the epitaxial structure, MHEMT combines the advantage of the GaAs large size chip processing technology of superior device performance of InP based hemts and maturation, and there is very important using value in the low noise in the millimeter-wave frequency scope, high power field.
Current gain cutoff frequencies (the f of MHEMT device
T) and maximum oscillation frequency (f
Max) mainly be subjected to the long influence of grid.Along with the development of device feature size to the deep-submicron direction, conventional optical lithography techniques can't adapt to new photoetching process requirement.In order to realize the grid line bar of deep-submicron, on the one hand, reduce exposure wavelength gradually, by UV spectrum g line (436nm) → i line (365nm) → 248nm → 193nm → extreme ultraviolet (EUV) → X ray; On the other hand, develop non-optical photoetching techniques such as ion beam exposure, electron beam exposure, this wherein, electron beam lithography has that wavelength is short, depth of focus long, the resolution advantages of higher.
1988, reported first utilize electron beam lithography to prepare the long GaAs of 120nm grid base InAlAs/InGaAs MHEMT.Up-to-date report has been prepared the MHEMT device of 35nm T type grid, f
TAnd f
MaxReach 440 and 520GHz respectively.At present, domestic research in this field also is in the starting stage.The MHEMT device of having reported all adopts optical lithography techniques, and generally about 1.0 μ m, the device performance that this has seriously restricted MHEMT has limited the application of MHEMT in the high frequency field to grid length.
Summary of the invention
(1) technical problem that will solve
Deficiency at above-mentioned prior art existence, main purpose of the present invention is to provide a kind of method of utilizing electron beam lithography to make the long GaAs base MHEMT of 200nm grid device, to produce T type grid structure GaAs base MHEMT device, obtain superior direct current, high frequency and power-performance, lay the foundation for further studying high-performance GaAs base MHEMT device.
(2) technical scheme
In order to achieve the above object, technical scheme of the present invention is achieved in that
A kind of method of making the long GaAs base MHEMT of 200nm grid device, this method comprises:
On MHEMT material epitaxy structure, prepare source-drain electrode;
Active area is corroded isolation having prepared on the MHEMT material epitaxy structure of source-drain electrode, form and isolate table top;
Adopt three layers of coating technique, utilize electron beam lithography, produce the T type grid of 200nm, and to adopt citric acid be solution corrosion grid grooves that Ti/Pt/Au is as gate metal in evaporation;
The photoetching wiring, evaporation wiring metal Ti//Au, acetone soaks to be peeled off, and finishes the making of the long GaAs base MHEMT of 200nm grid device;
In the such scheme, described step at preparation source-drain electrode on the MHEMT material epitaxy structure comprises: gluing virgin rubber AZ5214 on MHEMT material epitaxy structure, 3500 rev/mins, be coated with 1 minute, the applied thickness of virgin rubber AZ5214 is about 1.6 μ m, 95 ℃ of hot plates, 90 seconds, version is leaked in the source, small machine exposure about 20 seconds, AZ5214 developer solution show about 60s, the water flushing, bottoming glue 30 seconds is at corrosive liquid H
3PO
4: H
2O=1: float in 15 and removed oxide layer in 20 seconds, carry out acetone and peel off; Evaporate Ni/Ge/Au/Ge/Ni/Au source-drain electrode metal then, behind conventional stripping technology and alloy, form the source-drain electrode of ohmic contact.
In the such scheme, described active area is corroded isolation, form the step of isolating table top and comprise: adopt acetone rinsing, ethanol cleans, and water flushing 6 times, and baking is 10 minutes in 120 ℃ of baking ovens, 130 ℃ of walking programs, 3000 rev/mins of 9912 virgin rubbers are coated with 1 minute, the about 1.5 μ m of thickness, 95 ℃ of hot plates, 90 seconds, developer for positive photoresist shows about 60 seconds, the water flushing dries up, bottoming glue RIE O
2, the 60sccm flow, power 20W 120 seconds, adopts HCL: H
2O=1: 10, float acid 10 seconds, remove surface oxide layer, scaffold tower rank height utilizes corrosive liquid H
3PO
4: H
2O
2: H
2O=3: 1: 50 pair of active area corrodes isolation, directly corrodes InGaAs, and InAlAs, etching time are about 40 seconds, and monitoring current and island height float acid, and acetone removes photoresist, and cleans, and dries up, and forms to isolate table top.
In the such scheme, three layers of coating technique of described employing, utilize electron beam lithography, produce the T type grid of 200nm, and to adopt citric acid be solution corrosion grid grooves, and evaporation Ti/Pt/Au comprises as the step of gate metal: be coated with electron beam resist PMMA/PMGI/PMMA, bottom is coated with the PMMA of 200nm, the intermediate layer is coated with the PMGI of 420nm, and the superiors are coated with the PMMA of 300nm; Adopt disposable aligning and exposure, repeatedly the electron beam resist developing liquid developing forms autoregistration T type nanometer grid structure, evaporation grid Titanium/platinum/golden three-decker, and acetone is peeled off then, finishes the making of gate metal.
In the such scheme, in described titanium/platinum/golden three-decker, the thickness of titanium is 500 dusts, and the thickness of platinum is 800 dusts, and the thickness of gold is 2200 dusts.
In the such scheme, described photoetching wiring, evaporation wiring metal Ti//Au, acetone soaks to be peeled off, and the step of finishing the making of the long GaAs base MHEMT of 200nm grid device comprises: ethanol cleans, water flushing 6 times, 120 ℃ of baking ovens 10 minutes, 130 ℃ of walking programs are coated with 5214 counter-rotating glue, 3500 change, and are coated with 1 minute, the about 1.5 μ m of thickness, developer solution shows about 60 seconds, the water flushing dries up, bottoming glue RIE O
2, the 60sccm flow, power 20W 120 seconds, adopts HCL: H
2O=1: 10, float acid 10 seconds, remove surface oxide layer, evaporation wiring metal Ti/Au, acetone soaks peels off into component graphics, finishes the making of the long GaAs base MHEMT of 200nm grid device.
In the such scheme, the thickness of described evaporation wiring metal Ti is 300
, the thickness of Au is 10000
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this method of utilizing electron beam lithography to make the long GaAs base MHEMT of 200nm grid device provided by the invention by adopting 3 layers of adhesive process, has been produced T type grid structure GaAs base MHEMT device, has obtained superior direct current, high frequency and power-performance.Prepare well behaved enhancement mode and depletion type MHEMT device, lay a good foundation for further studying high-performance GaAs base MHEMT device.
2, utilize the method for making T type grid GaAs MHEMT provided by the invention, produce the long MHEMT device of well behaved 200nm grid, maintain the leading position at home.
3, utilize the method for making T type grid GaAs MHEMT provided by the invention, solved the manufacture craft problem of narrow thin grizzly bar, adopt three layers of adhesive process, the grid of having made 200nm are long, the domestic blank of filling up.
4, utilize the method for making T type grid GaAs MHEMT provided by the invention, be made into the superior device of high frequency performance, the way of a kind of integrated GaAs and InP advantage is provided.
5, utilize the method for making T type grid GaAs MHEMT provided by the invention, fully use the advantage of electron beam lithography, proved being widely used of MHEMT device high frequency field.
6, the method for making provided by the invention T type grid GaAs MHEMT, it is obvious to have effect, simple for process, and the advantage of economic and practical and good reliability adopts in microwave, millimeter wave compound semiconductor device are made easily and promotes.
Description of drawings
Fig. 1 is the method flow diagram that the present invention makes the long GaAs base MHEMT of 200nm grid device;
Fig. 2 is the schematic diagram of the MHEMT material epitaxy structure that adopts of the present invention;
Fig. 3 is the cross-sectional view of the long GaAs base MHEMT of the 200nm grid device made of the present invention;
Fig. 4 is the transfer characteristic curve and the transconductance characteristic curve of T type grid GaAs MHEMT device of the present invention;
Fig. 5 is a T type grid GaAs MHEMT device I-V properties curve of the present invention;
Fig. 6 is a T type grid GaAs MHEMT device high frequency performance curve of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram of the long GaAs base MHEMT of making 200nm grid provided by the invention device, and this method may further comprise the steps:
Step 1: on MHEMT material epitaxy structure, prepare source-drain electrode; Concrete technology comprises:
Go up gluing virgin rubber AZ5214 in MHEMT material epitaxy structure (as shown in Figure 2), 3500 rev/mins, be coated with 1 minute, the applied thickness of virgin rubber AZ5214 is about 1.6 μ m, 95 ℃ of hot plates, 90 seconds, version was leaked in the source, small machine exposure about 20 seconds, the AZ5214 developer solution shows about 60s, the water flushing, bottoming glue 30 seconds is at corrosive liquid H
3PO
4: H
2O=1: float in 15 and removed oxide layer in 20 seconds, carry out acetone and peel off; Evaporate Ni/Ge/Au/Ge/Ni/Au source-drain electrode metal then, behind conventional stripping technology and alloy, form the source-drain electrode of ohmic contact.
Step 2: active area is corroded isolation having prepared on the MHEMT material epitaxy structure of source-drain electrode, form and isolate table top; Concrete technology comprises:
Adopt acetone rinsing, ethanol cleans, and water flushing 6 times, and baking is 10 minutes in 120 ℃ of baking ovens, 130 ℃ of walking programs, 3000 rev/mins of 9912 virgin rubbers are coated with 1 minute, the about 1.5 μ m of thickness, 95 ℃ of hot plates, 90 seconds, developer for positive photoresist shows about 60 seconds, and the water flushing dries up, bottoming glue RIE O
2, the 60sccm flow, power 20W 120 seconds, adopts HCL: H
2O=1: 10, float acid 10 seconds, remove surface oxide layer, scaffold tower rank height utilizes corrosive liquid H
3PO
4: H
2O
2: H
2O=3: 1: 50 pair of active area corrodes isolation, directly corrodes InGaAs, and InAlAs, etching time are about 40 seconds, and monitoring current and island height float acid, and acetone removes photoresist, and cleans, and dries up, and forms to isolate table top.
Step 3: adopt three layers of coating technique (PMMA/PMGI/PMMA), utilize electron beam lithography, produce the T type grid of 200nm, and adopt (the citric acid:H of citric acid system
2O
2) solution corrosion grid groove, Ti/Pt/Au is as gate metal in evaporation; Concrete technology comprises:
Be coated with electron beam resist (PMMA/PMGI/PMMA), bottom is coated with the PMMA of 200nm, and the intermediate layer is coated with the PMGI of 420nm, and the superiors are coated with the PMMA of 300nm; Adopt disposable aligning and exposure, repeatedly the electron beam resist developing liquid developing forms autoregistration T type nanometer grid structure, evaporation grid metal Ti (500
)/Pt (800
)/Au (2200
), acetone is peeled off then, finishes the making of gate metal.
Step 4: the photoetching wiring, evaporation wiring metal Ti//Au, acetone soaks to be peeled off, and finishes the making of the long GaAs base MHEMT of 200nm grid device; Concrete technology comprises:
Ethanol cleans, water flushing 6 times, and 120 ℃ of baking ovens 10 minutes, 130 ℃ of walking programs are coated with 5214 counter-rotating glue, and 3500 change, and are coated with 1 minute, the about 1.5 μ m of thickness, developer solution shows about 60 seconds, and the water flushing dries up, bottoming glue RIE O
2, the 60sccm flow, power 20W 120 seconds, adopts HCL: H
2O=1: 10, float acid 10 seconds, remove surface oxide layer, evaporation wiring metal Ti (
)/Au (
), acetone soaks peels off into component graphics, finishes the making of the long GaAs base MHEMT of 200nm grid device.
Fig. 3 shows the cross-sectional view of the long GaAs base MHEMT of the 200nm grid device of the present invention's making.
The method of the long GaAs base MHEMT of this making 200nm grid provided by the invention device, adopt three layers of coating technique (PMMA/PMGI/PMMA), utilize advanced electron beam lithography technology, produced 200nmT type grid structure GaAs base MHEMT device, superior direct current, high frequency performance have been obtained, superior DC and high frequency performance have been obtained, mutual conductance (g
m), maximum saturation leakage current density (J
DSS), threshold voltage (V
T), OFF state source drain breakdown voltage (V
B), f
TAnd f
MaxBe respectively 510mS/mm, 605mA/mm ,-1.8V, 2.4V, 110GHz and 72GHz.Specifically can be with reference to Fig. 4 to characteristic curve shown in Figure 6.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1, a kind of method of making the long GaAs base MHEMT of 200nm grid device is characterized in that this method comprises:
On MHEMT material epitaxy structure, prepare source-drain electrode;
Active area is corroded isolation having prepared on the MHEMT material epitaxy structure of source-drain electrode, form and isolate table top;
Adopt three layers of coating technique, utilize electron beam lithography, produce the T type grid of 200nm, and to adopt citric acid be solution corrosion grid grooves that Ti/Pt/Au is as gate metal in evaporation;
The photoetching wiring, evaporation wiring metal Ti//Au, acetone soaks to be peeled off, and finishes the making of the long GaAs base MHEMT of 200nm grid device.
2, the method for the long GaAs base MHEMT of making 200nm grid according to claim 1 device is characterized in that, the described step for preparing source-drain electrode on MHEMT material epitaxy structure comprises:
Gluing virgin rubber AZ5214 on MHEMT material epitaxy structure, 3500 rev/mins, be coated with 1 minute, the applied thickness of virgin rubber AZ5214 is about 1.6 μ m, 95 ℃ of hot plates, 90 seconds, version was leaked in the source, small machine exposure about 20 seconds, the AZ5214 developer solution shows about 60s, the water flushing, and bottoming glue 30 seconds is at corrosive liquid H
3PO
4: H
2O=1: float in 15 and removed oxide layer in 20 seconds, carry out acetone and peel off; Evaporate Ni/Ge/Au/Ge/Ni/Au source-drain electrode metal then, behind conventional stripping technology and alloy, form the source-drain electrode of ohmic contact.
3, the method for the long GaAs base MHEMT of making according to claim 1 200nm grid device is characterized in that, described active area is corroded isolation, and the step that forms the isolation table top comprises:
Adopt acetone rinsing, ethanol cleans, and water flushing 6 times, and baking is 10 minutes in 120 ℃ of baking ovens, 130 ℃ of walking programs, 3000 rev/mins of 9912 virgin rubbers are coated with 1 minute, the about 1.5 μ m of thickness, 95 ℃ of hot plates, 90 seconds, developer for positive photoresist shows about 60 seconds, and the water flushing dries up, bottoming glue RIE O
2, the 60sccm flow, power 20W 120 seconds, adopts HCL: H
2O=1: 10, float acid 10 seconds, remove surface oxide layer, scaffold tower rank height utilizes corrosive liquid H
3PO
4: H
2O
2: H
2O=3: 1: 50 pair of active area corrodes isolation, directly corrodes InGaAs, and InAlAs, etching time are about 40 seconds, and monitoring current and island height float acid, and acetone removes photoresist, and cleans, and dries up, and forms to isolate table top.
4, the method for the long GaAs base MHEMT of making 200nm grid according to claim 1 device, it is characterized in that, three layers of coating technique of described employing, utilize electron beam lithography, produce the T type grid of 200nm, and to adopt citric acid be solution corrosion grid grooves, and evaporation Ti/Pt/Au comprises as the step of gate metal:
Be coated with electron beam resist PMMA/PMGI/PMMA, bottom is coated with the PMMA of 200nm, and the intermediate layer is coated with the PMGI of 420nm, and the superiors are coated with the PMMA of 300nm; Adopt disposable aligning and exposure, repeatedly the electron beam resist developing liquid developing forms autoregistration T type nanometer grid structure, evaporation grid Titanium/platinum/golden three-decker, and acetone is peeled off then, finishes the making of gate metal.
5, the method for the long GaAs base MHEMT of making 200nm grid according to claim 4 device is characterized in that in described titanium/platinum/golden three-decker, the thickness of titanium is 500 dusts, and the thickness of platinum is 800 dusts, and the thickness of gold is 2200 dusts.
6, the method for the long GaAs base MHEMT of making 200nm grid according to claim 1 device is characterized in that, described photoetching wiring, and evaporation wiring metal Ti//Au, acetone soaks to be peeled off, and the step of finishing the making of the long GaAs base MHEMT of 200nm grid device comprises:
Ethanol cleans, water flushing 6 times, and 120 ℃ of baking ovens 10 minutes, 130 ℃ of walking programs are coated with 5214 counter-rotating glue, and 3500 change, and are coated with 1 minute, the about 1.5 μ m of thickness, developer solution shows about 60 seconds, and the water flushing dries up, bottoming glue RIE O
2, the 60sccm flow, power 20W 120 seconds, adopts HCL: H
2O=1: 10, float acid 10 seconds, remove surface oxide layer, evaporation wiring metal Ti/Au, acetone soaks peels off into component graphics, finishes the making of the long GaAs base MHEMT of 200nm grid device.
7, the method for the long GaAs base MHEMT of making 200nm grid according to claim 6 device is characterized in that the thickness of described evaporation wiring metal Ti is
The thickness of Au is
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|---|---|---|---|
| CN200810115563A CN101615580A (en) | 2008-06-25 | 2008-06-25 | Method for manufacturing GaAs-based MHEMT device with gate length of 200nm |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617019A (en) * | 2015-02-04 | 2015-05-13 | 桂林电子科技大学 | Method for monitoring corrosion of MHEMT (Metamorphic High Electron Mobility Transistor) gate groove in GaAs substrate |
| CN104637941A (en) * | 2015-02-04 | 2015-05-20 | 桂林电子科技大学 | Composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and preparation method thereof |
-
2008
- 2008-06-25 CN CN200810115563A patent/CN101615580A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617019A (en) * | 2015-02-04 | 2015-05-13 | 桂林电子科技大学 | Method for monitoring corrosion of MHEMT (Metamorphic High Electron Mobility Transistor) gate groove in GaAs substrate |
| CN104637941A (en) * | 2015-02-04 | 2015-05-20 | 桂林电子科技大学 | Composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and preparation method thereof |
| CN104637941B (en) * | 2015-02-04 | 2017-05-10 | 桂林电子科技大学 | Composite channel MHEMT (Metamorphic High Electron Mobility Transistor) microwave oscillator and preparation method thereof |
| CN104617019B (en) * | 2015-02-04 | 2017-06-27 | 桂林电子科技大学 | A kind of GaAs substrates MHEMT grid recess corrosion monitoring process |
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