CN111370484A - Proton irradiation resistant InP-based HEMT device based on composite channel and double doped layers and processing method thereof - Google Patents
Proton irradiation resistant InP-based HEMT device based on composite channel and double doped layers and processing method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of proton irradiation resistant semiconductor devices, and particularly relates to a proton irradiation resistant InP-based HEMT device based on a composite channel and a double-doped layer and a processing method thereof. The InP-based HEMT channel adopts an InGaAs/InAs/AlInGaAs composite channel, the InAs material has low electron effective mass and high channel carrier mobility, a deep potential well is formed due to the narrow forbidden band width to enhance the channel carrier limiting capability, the AlInGaAs material has high Al displacement threshold energy to reduce the channel induced defect concentration to generate a weaker scattering effect, and the carrier mobility is compensated. And a double-doped structure above the channel is adopted, so that the concentration of the channel primary carriers is increased, and the compensation of the carrier removal effect caused by irradiation induced defects is realized. An InP thin layer is added between the InAlAs barrier layer and the InGaAs cap layer in the epitaxial structure and serves as an automatic cut-off layer for etching the cap layer of the gate trench process, and the precise control of the gate trench process is achieved.
Description
Technical Field
The invention belongs to the technical field of proton irradiation resistant semiconductor devices, and particularly relates to a proton irradiation resistant InP-based HEMT device based on a composite channel and a double-doped layer and a processing method thereof.
Background
With the development of society and the progress of technology, the demand of national defense fields such as aerospace, satellite communication and the like and the demand of civilian fields such as smart cities, unmanned driving and the like on high-frequency millimeter wave integrated circuits are more and more urgent. The implementation of high performance, high frequency integrated circuits relies on mature nanoscale semiconductor device fabrication techniques. With the mainstream Si-based Complementary Metal Oxide Semiconductor (CMOS) reaching the 10nm technical node, the preparation technology of a high-frequency semiconductor device with a new principle, a new material and a new structure becomes an important exploration direction of the 'post-molar age'. The III-V InP-based High Electron Mobility Transistor (HEMT) depends on an energy band engineering solution, has the characteristics of high frequency, low noise, low power consumption, high gain and the like, is known to be an excellent choice for realizing a super-high-speed low-noise integrated circuit, and has great application potential in the space fields of satellite radars, deep space exploration, astronomy and the like.
The application of aerospace equipment in space environment will face extremely complex irradiation environment: proton, electron, neutron, gamma ray, etc., with the highest proton fraction. The electronic system is used as a control core of the space equipment, the microelectronic device is very sensitive to charged particle radiation and is easy to generate various damage effects such as ionization effect, displacement damage, single event and the like, great challenges are provided for the reliability of semiconductor devices and integrated circuits, control failure and even failure of the electronic system can be caused, and the space operation reliability and stability of the space equipment are greatly reduced. Therefore, the reinforced structure and the process of the proton irradiation resistant device become the key for ensuring the reliable and long-life operation of the electronic system of the aerospace equipment.
The InP-based HEMT proton irradiation induces vacancy defects through a displacement effect, the induced defects cause the concentration of channel carriers to be reduced through a carrier removal effect, and cause the mobility of the channel carriers to be reduced through a scattering effect, and finally, the alternating current and direct current characteristics of the device are degraded. The epitaxial structure parameters are adjusted through energy band engineering, the carrier concentration and the mobility are compensated, the limiting capacity of a channel on the carriers is improved, the irradiation induced defect concentration is reduced, the fading influence of irradiation on the device can be relieved certainly, and the method becomes an irradiation-resistant reinforcement alternative. Therefore, the invention provides the InP-based HEMT irradiation-resistant reinforcing structure and the processing method thereof, wherein the double doped layers improve the carrier concentration of the channel, the composite channel increases the carrier mobility and the limiting capability of the channel on the carrier, and the induced defect concentration is reduced.
Disclosure of Invention
The invention aims to provide an anti-proton irradiation InP-based HEMT device based on a composite channel and a double-doped layer and a processing method thereof.
In order to achieve the purpose, the invention adopts the technical scheme that:
an extension structure of the InP-based HEMT is respectively an InP substrate, an InAlAs buffer layer, an InGaAs/InAs/AlInGaAs composite channel layer, an InAlAs lower isolating layer (an isolating layer 2, a Spacer-2), an InAlAs lower Doping layer (a surface Doping layer 2, Si-Doping-2), an InAlAs upper isolating layer (an isolating layer 1, a Spacer-1), an Si upper Doping layer (a surface Doping layer 1, Si-Doping-1), an InAlAs Schottky barrier layer, an InP corrosion cut-off layer and an InGaAs cap layer from bottom to top; the InAlAs buffer layer is provided with a source region isolation table board, two sides of the high-doped InGaAs cap layer are respectively provided with source electrode ohmic contact metal and drain electrode ohmic contact metal, an InP corrosion cut-off layer between the source electrode ohmic contact metal and the drain electrode ohmic contact metal or an InAlAs Schottky barrier layer is provided with T-shaped gate Schottky contact metal, source electrode wiring metal is arranged on the InAlAs buffer layer under the source electrode ohmic contact metal and the active region isolation table board, drain electrode wiring metal is arranged on the drain electrode ohmic contact metal and the InAlAs buffer layer under the active region isolation table board, and gate electrode wiring metal is arranged on the InAlAs buffer layer under the active region isolation table board.
Furthermore, in the device, the thickness of the InP substrate is 100 μm, the thickness of the InAlAs buffer layer is 500nm, and IThe thickness of the nGaAs/InAs/AlInGaAs composite channel layer is 15 nm, the thickness of the InAlAs lower isolation layer is 3 nm, and the doping density of the doping layer below the Si is 5 × 1012cm-2The thickness of InAlAs upper isolation layer is 2nm, and the doping density of Si upper doped layer is 2 × 1011cm-2The thickness of the InAlAs Schottky barrier layer is 10nm, the thickness of the InP corrosion stop layer is 5 nm, the thickness of the InGaAs cap layer is 15 nm, and the doping concentration is 3 × 1019cm-2。
Further, the InGaAs/InAs/AlInGaAs composite channel layer comprises an InGaAs layer with the thickness of 3 nm, an InAs layer with the thickness of 2nm and an AlInGaAs layer with the thickness of 10 nm; in the InGaAs/InAs/AlInGaAs composite channel, the proportion of each element is In0.53Ga0.47As/InAs/In0.53(Al0.7Ga0.3)0.47As; the proportion of each element of the InAlAs barrier layer and the buffer layer is In0.52Al0.48As; the proportion of each element of the InGaAs cap layer is In0.53Ga0.47As。
The processing method of the proton irradiation resistant InP-based HEMT device based on the composite channel and the double doped layers comprises the following steps:
A. preparing an InP-based InAlAs/InGaAs HEMT epitaxial wafer, cleaning the epitaxial wafer until the surface of the epitaxial wafer under a microscope is free from contamination, and drying by adopting nitrogen; the epitaxial wafer sequentially comprises an InP substrate, an InAlAs buffer layer, an InGaAs/InAs/AlInGaAs composite channel layer, an InAlAs lower isolating layer, a Si lower doped layer, an InAlAs upper isolating layer, a Si upper doped layer, an InAlAs Schottky barrier layer, an InP corrosion stop layer and an InGaAs cap layer from bottom to top; all epitaxial materials in the epitaxial wafer are grown by a molecular beam epitaxy method;
B. forming an active region isolation table board on the epitaxial wafer through positive photoetching, corroding part of the InAlAs buffer layer, corroding the InGaAs cap layer by using mixed corrosive liquid of phosphoric acid and hydrogen peroxide, corroding the InP corrosion stop layer by using mixed corrosive liquid of phosphoric acid and hydrochloric acid, and corroding the InAlAs Schottky barrier layer, the InGaAs/InAs/AlInGaAs composite channel layer and the InAlAs buffer layer by using mixed corrosive liquid of phosphoric acid and hydrogen peroxide;
C. defining a metal area of ohmic contact of a source electrode and a metal area of ohmic contact of a drain electrode on two sides of a highly doped InGaAs cap layer of an active area isolated from a mesa by photoetching, depositing a metal film Ti/Pt/Au on the metal area of ohmic contact of the source electrode and the metal area of ohmic contact of the drain electrode by adopting electron beam evaporation equipment or sputtering furnace equipment, and forming ohmic contact of the source electrode and the drain electrode on the highly doped InGaAs cap layer by the operations;
D. defining a source wiring metal region on the InAlAs buffer layer under the source ohmic contact and active region isolation platform surface, defining a drain wiring metal region on the InAlAs buffer layer under the drain ohmic contact and active region isolation platform surface, defining a grid wiring metal region on the InAlAs buffer layer under the active region isolation platform surface, depositing a metal film Ti/Au on the wiring metal region by adopting electron beam evaporation equipment or sputtering furnace equipment, and forming wiring metal through the above operations;
E. forming a T-shaped gate between the metal area contacted with the source electrode and the metal area contacted with the drain electrode, wherein the three steps of forming T-shaped gate morphology by electron beam lithography, preparing a gate groove and preparing gate metal are included:
firstly, forming a T-shaped gate morphology on a highly doped InGaAs cap layer between a metal area contacted with a source electrode and a metal area contacted with a drain electrode by adopting PMMA/Al/UVIII three-layer electron beam glue and adopting a method of electron beam Exposure (EBL) and development for two times;
secondly, preparing a gate groove;
and finally, depositing a Ti/Pt/Au gate metal film in the gate groove by adopting electron beam evaporation or sputtering furnace equipment, and connecting the Ti/Pt/Au gate metal film with gate wiring metal to obtain the InP-based HEMT.
Specifically, the volume ratio of the mixed corrosive liquid of phosphoric acid and hydrogen peroxide in the step B is H3PO4:H2O2:H2O =3:1: 40-60; the volume ratio of the phosphoric acid and the hydrochloric acid mixed corrosive liquid is HCl to H3PO41: 3-5; and over-etching the InAlAs buffer layer by 15-30 nm.
Specifically, the thickness of the deposited metal film in the step C is as follows: 10 to 20nm of Ti, 10 to 20nm of Pt and 300 to 500nm of Au.
Specifically, the thickness of the deposited metal film in the step D is as follows: 10 to 20nm of Ti and 300 to 500nm of Au.
Specifically, the process for forming the T-shaped gate morphology in the step E is that firstly, a PMMA/Al/UVIII three-layer electron beam glue layer is formed on a wafer, and the thickness of each layer is PMMA: 80-200 nm, Al: 7-15 nm, UVIII: 500-700 nm; the dosage of the UVIII electron beam adhesive layer in electron beam exposure is as follows: 100 uC; developing CD26 for 60-90 sec; the dosage of PMMA electron beam glue layer exposed by electron beams is as follows: 800-1200 uC; and developing the solution for 2.5-3.5 min by using o-xylene.
Specifically, the preparation of the gate trench in the step E includes two ways:
Specifically, the volume ratio of the mixed corrosive liquid of phosphoric acid and hydrogen peroxide in the step E is H3PO4:H2O2:H2O =3:1: 40-60; the etching thickness is 3-4 nm, the flow rate of Ar plasma is 15-30 sccm, and the radio frequency power is 5-20 mW; the thickness of the gate metal film is as follows: 10 to 20nm of Ti, 10 to 20nm of Pt and 300 to 500nm of Au.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the InP-based HEMT channel adopts an InGaAs/InAs/AlInGaAs composite channel, the channel carrier mobility and the channel carrier limiting capability are increased through a narrow-band gap InAs material, the AlInGaAs material Al displacement threshold energy is higher, the channel induced defect concentration is reduced, a weaker scattering effect is generated, and the carrier mobility is compensated. Meanwhile, the InGaAs and AlInGaAs materials of the channel are in lattice matching with the materials of the isolation layer and the buffer layer, so that performance reduction caused by lattice mismatch of the InAs materials and the materials of the isolation layer and the buffer layer is avoided.
The InP-based HEMT adopts a double-doped structure above the channel, increases the concentration of the channel primary carrier, and realizes the compensation of the carrier removal effect caused by irradiation induced defects. Meanwhile, the double doped layer is positioned above the channel and is easier to control through gate voltage, and the carrier concentration and transconductance of the channel of the device are increased.
In the InP-based HEMT epitaxial structure, an InP thin layer is added between the InAlAs barrier layer and the InGaAs cap layer to serve as an automatic cut-off layer for etching the cap layer of the gate trench process, so that the precise control of the gate trench process is realized. And performing low-power etching on the InP corrosion stop layer by adopting Ar plasma through Inductively Coupled Plasma (ICP) equipment, and reserving a thin layer of InP to prevent InAlAs barrier layer materials from being exposed and oxidized in air. Meanwhile, the low-power dry etching can realize the accurate control of the transverse width and the longitudinal depth of the gate groove. In addition, an InP corrosion cut-off layer below the gate metal can be etched at low power in the gate groove process, then the thickness of the InAlAs barrier layer is accurately controlled through digital corrosion, the gate groove distance is reduced, and the gate control capacity of the device is improved.
Drawings
Fig. 1 is a schematic cross-sectional structure view of the proton irradiation resistant InP-based HEMT device based on a recombination channel and a double-doped layer according to embodiment 1;
fig. 2 is a flowchart of a processing method of the proton irradiation resistant InP-based HEMT device based on a composite channel and a double doped layer as described in embodiment 1;
FIG. 3 is a flow chart of the preparation of a T-shaped grating based on PMMA/Al/UVIII step exposure development in step E of example 1;
FIG. 4 is a schematic structural view of a conventional single-channel single-doped InP-based HEMT device;
FIG. 5 is an irradiation resistance characteristic diagram of a conventional single-channel single-doped layer InP-based HEMT under irradiation of different proton doses; (a) output characteristic (I)DS-VDS），(b) Transfer characteristics (I)DS-VGS）；
FIG. 6 is an anti-irradiation characteristic diagram of a composite channel double-doped InP-based HEMT under irradiation of different proton doses; (a) output characteristic (I)DS-VDS) (b) transfer characteristics (I)DS-VGS）；
FIG. 7 is a comparison of the degradation of characteristics of conventional single-channel single-doped and composite-channel double-doped InP-based HEMTs; (a) normalized saturation current degradation, (b) normalized transfer characteristic degradation.
Detailed Description
In order to make the objects, technical solutions and effects of the present invention clearer and clearer, the present invention is described in further detail below. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
A profile structure of an anti-proton irradiation InP-based HEMT device based on a composite Channel and a double-doped layer is shown in figure 1, the epitaxial structure of the InP-based HEMT is an InP Substrate (InP Substrate) with the thickness of 100 mu m, an InAs Buffer layer (InAs Buffer) with the thickness of 500nm, an InGaAs/InAs/AlInGaAs composite Channel layer (InGaAs/InAs/AlInGaAs Channel) with the thickness of 15 nm respectively from bottom to top, wherein the InAs Buffer layer comprises an InGaAs layer with the thickness of 3 nm, an InAs layer with the thickness of 2nm and an AlInGaAs layer with the thickness of 10nm, an InAs lower isolating layer (InAs Spacer-2) with the thickness of 3 nm, and the doping density is 5 × 1012cm-2A doped layer (Si-Doping-2) below Si, an InAlAs upper isolating layer (InAlAs Spacer-1) with the thickness of 2nm, and the Doping density is 2 × 1011cm-2Doping layer (Si-Doping-1) on Si, InAlAs Schottky Barrier layer (InAlAs Barrier) with thickness of 10nm, InP corrosion cut-off layer with thickness of 15 nm and Doping concentration of 3 × 1019cm-2InGaAs cap layer of (a). All InAlAs and InGaAs layers are in lattice matching with the InP substrate, all epitaxial materials grow by a Molecular Beam Epitaxy (MBE) method, a source region isolation table top is arranged on the InAlAs buffer layer, source ohmic contact metal and drain ohmic contact metal are respectively arranged on two sides of the highly doped InGaAs cap layer, and the source ohmic contact metal and the drain ohmic contact metalA T-shaped gate Schottky contact metal is arranged on the InP corrosion cut-off layer or the InAlAs Schottky barrier layer between the polar ohmic contact metals, a source wiring metal is arranged on the InAlAs buffer layer under the source ohmic contact metal and the active region isolation platform, a drain wiring metal is arranged on the drain ohmic contact metal and the InAlAs buffer layer under the active region isolation platform, and a gate wiring metal is arranged on the InAlAs buffer layer under the active region isolation platform. In the InGaAs/InAs/AlInGaAs composite channel, the proportion of each element is In0.53Ga0.47As/InAs/In0.53(Al0.7Ga0.3)0.47As. The proportion of each element of the InAlAs barrier layer and the buffer layer is In0.52Al0.48As. The proportion of each element of the InGaAs cap layer is In0.53Ga0.47As。
A flow chart of the processing method of the proton irradiation resistant InP-based HEMT device based on the composite channel and the double doped layer is shown in fig. 2, and the specific steps are as follows:
A. preparing an InP-based InAlAs/InGaAs HEMT epitaxial wafer, sequentially cleaning the epitaxial wafer by using acetone, ethanol and deionized water until the surface of the epitaxial wafer under a microscope is free from contamination, and drying by using nitrogen; as shown In fig. 2, the epitaxial wafer of the epitaxial wafer comprises, from bottom to top, an InP Substrate (InP Substrate), an InAlAs Buffer layer (InAlAs Buffer), In0.53Ga0.47As/InAs/In0.53(Al0.7Ga0.3)0.47The InAs composite channel layer (InGaAs/InAs/AlInGaAschannel), an InAlAs lower isolating layer (InAlAs Spacer-2), a Si lower doped layer (Si-Doping-2), an InAlAs upper isolating layer (InAlAs Spacer-1), a Si upper doped layer (Si-Doping-1), an InAlAs Schottky barrier layer (InAlAsBarrier), an InP corrosion stop layer and an InGaAs cap layer, wherein all InAlAs and InGaAs layers are in lattice matching with an InP substrate; all epitaxial materials in the epitaxial wafer are grown by a Molecular Beam Epitaxy (MBE) method;
B. forming a convex active region isolation mesa on the epitaxial wafer by positive photoetching, over-etching part of InAlAs buffer layer in order to ensure that the InGaAs channel layer under the active region isolation mesa is completely etched, and addingIn the process, a mixed corrosive liquid (volume ratio H) of phosphoric acid and hydrogen peroxide is used3PO4:H2O2:H2O =3:1: 50) etching the InGaAs cap layer by using a mixed etching solution of phosphoric acid and hydrochloric acid (volume ratio HCl: H)3PO4=1: 4) etching the InP etching stop layer by using a mixed etching solution of phosphoric acid and hydrogen peroxide (volume ratio H)3PO4:H2O2:H2O =3:1: 50) etching the InAlAs Schottky barrier layer, the InGaAs/InAs/AlInGaAs composite channel layer and the InAlAs buffer layer; the InAlAs buffer layer is over-etched by about 20nm, so that good electrical isolation characteristics are ensured;
C. defining a metal area of ohmic contact of a source electrode and a metal area of ohmic contact of a drain electrode on two sides of a highly doped InGaAs cap layer of an active area isolated from a mesa by photoetching, depositing a metal film Ti/Pt/Au (the thickness of the deposited metal film is 10-20 nm for Ti, 10-20 nm for Pt and 300-500 nm for Au) on the metal area of ohmic contact of the source electrode and the metal area of ohmic contact of the drain electrode by adopting electron beam evaporation equipment or sputtering furnace equipment, and forming ohmic contact of the source electrode and the drain electrode on the highly doped InGaAs cap layer by the operations;
D. defining a source wiring metal region on the InAlAs buffer layer under the source ohmic contact and the active region isolation platform surface, defining a drain wiring metal region on the InAlAs buffer layer under the drain ohmic contact and the active region isolation platform surface, defining a grid wiring metal region on the InAlAs buffer layer under the active region isolation platform surface (as shown in figure 1, the purple part is wiring metal), depositing a metal film Ti/Au (Ti: 10-20 nm, Au: 300-500 nm) on the wiring metal region by adopting an electron beam evaporation device or a sputtering furnace device, and forming wiring metal by the above operations;
E. forming a T-shaped gate between a metal area contacted with a source electrode and a metal area contacted with a drain electrode, wherein the three steps of electron beam lithography T-shaped gate morphology, gate groove preparation and gate metal preparation are included:
firstly, forming a T-shaped gate shape on a highly doped InGaAs cap layer between a metal area contacted with a source electrode and a metal area contacted with a drain electrode by adopting PMMA/Al/UVIII three-layer electron beam glue and through a method of electron beam Exposure (EBL) twice and development, wherein the T-shaped gate shape forming process is shown in figure 3, firstly forming a PMMA/Al/UVIII three-layer electron beam glue layer on a wafer, and the thicknesses of the layers are PMMA: 80-200 nm, Al: 7-15 nm, UVIII: 500-700 nm; dose of electron beam exposure UVIII electron beam glue layer: 100 uC, 60-90 sec of CD26 development, large exposure dose threshold of PMMA electron beam glue layer, and no influence on exposure of small dose; dose of PMMA electron beam glue layer exposed by electron beam: 800-1200 uC, developing with o-xylene for 2.5-3.5 min, wherein UVIII is developed, and forward scattering during PMMA exposure is reduced;
secondly, preparing a gate groove specifically comprises two modes:
and finally, depositing a Ti/Pt/Au gate metal film (10-20 nm Ti, 10-20 nm Pt and 300-500 nm Au) in the gate groove by adopting electron beam evaporation or sputtering furnace equipment, and connecting the Ti/Pt/Au gate metal film with gate wiring metal to obtain the InP-based HEMT.
The processing method adopts the InGaAs/InAs/AlInGaAs composite channel layer for the channel of the InP-based HEMT device, the carrier mobility of the channel and the limiting capacity of the channel on the carrier are increased through the narrow-band gap InAs material, the Al displacement threshold energy in the AlInGaAs material is high, the concentration of channel induced defects is reduced, a weaker scattering effect is generated, and the carrier mobility is compensated. Meanwhile, the InGaAs and AlInGaAs materials of the channel are in lattice matching with the materials of the isolation layer and the buffer layer, so that performance reduction caused by lattice mismatch of the InAs materials and the materials of the isolation layer and the buffer layer is avoided.
The InP-based HEMT device adopts a double-doped structure above the channel, increases the concentration of the primary current carrier of the channel, and realizes the compensation of the current carrier removal effect caused by irradiation induced defects. Meanwhile, the double doped layer is positioned above the channel and is easier to control through gate voltage, and the carrier concentration and transconductance of the channel of the device are increased.
In the epitaxial structure of the InP-based HEMT device, an InP thin layer is added between the InAlAs barrier layer and the InGaAs cap layer to serve as an automatic cut-off layer for etching the cap layer of the gate trench process, so that the accurate control of the gate trench process is realized. The gate slot process flow is as follows: etching the InGaAs cap layer by using a mixed etching solution of phosphoric acid and hydrogen peroxide; and performing low-power etching on the InP corrosion stop layer by adopting Ar plasma through Inductively Coupled Plasma (ICP) equipment, and reserving a thin layer of InP to prevent InAlAs barrier layer materials from being exposed and oxidized in air. Meanwhile, the low-power dry etching can realize the accurate control of the transverse width and the longitudinal depth of the gate groove. In addition, in the gate trench process, after an InP corrosion stop layer below gate metal is etched at low power, 1-3 times of digital corrosion is carried out through an InAlAs barrier layer, wherein the corrosion thickness is approximately as follows: 2-4 nm, and the single digital etching step comprises: oxidizing in hydrogen peroxide for 30s, and corroding in phosphoric acid and aqueous solution with the volume ratio equal to 1:10 for 30 s; the source-drain spacing can be reduced by re-etching the InAlAs barrier layer, and the transconductance and the frequency characteristic of the device are improved.
For the prepared device, in step E, when the gate trench is prepared, the InP etching stop layer is not retained, and for the structure of the obtained device, a hydrodynamic carrier transport model and a density gradient quantum effect model are adopted to respectively perform a conventional single-Channel single-doped structure (the structure of which is shown in fig. 4, wherein the epitaxial structure of the InP-based HEMT is an InP Substrate (InP Substrate) with a thickness of 100 μm, an InAlAs Buffer layer (InAlAs Buffer) with a thickness of 500nm, an InGaAs Channel layer (InGaAs Channel) with a thickness of 15 nm, an InAlAs isolation layer (InAlAs spacer) with a thickness of 5 nm, and the doping density is 5 × 1012cm-2The doped layer of Si face, InAlAs Schottky Barrier layer (InAlAs Barrier) with thickness of 10nm, InP corrosion cut-off layer with thickness of 5 nm and doping concentration of 3 × 1019cm-2InGaAs cap layer) and the proton irradiation resistance of the double-doped composite channel structure, introducing a proton irradiation induced vacancy defect into a carrier transmission model for self-consistent calculation, and taking the proton irradiation energy of the most vacancy defects induced by the heterojunction region of the device as 75 keV and the irradiation doses as 2.5 × 10 respectively, wherein the results are shown in fig. 5, 6 and 711cm-2,5×1011cm-2, 1×1012cm-2, 2×1012cm-2And 4 × 1012cm-2。
As can be seen from FIGS. 5 and 6, the maximum saturation leakage current (I) of the single-channel single-doped InP-based HEMT before irradiationD，sat) And maximum transconductance (g)m，max) 570 mA/mm and 970 mS/mm respectively, and the maximum saturation leakage current and the maximum transconductance of the double-doped composite channel HEMT are 867 mA/mm and 1822 mS/mm respectively. With the increase of proton dose, the maximum saturation leakage current and the maximum transconductance of the single-channel single-doped and composite-channel double-doped InP-based HEMTs both show degradation tendency, and it is obvious from FIG. 7 that the degradation degree of the composite-channel double-doped InP-based HEMT is lower than that of the composite-channel double-doped InP-based HEMTSingle channel single doped structure at maximum dose 4 × 1012cm-2In the case of the single-channel single-doped HEMT, the saturation leakage current and the maximum transconductance are respectively kept at 9.3% and 25% of those of the non-irradiated HEMT, while the two parameters of the composite channel double-doped HEMT can still be kept at 61% and 56% of those of the non-irradiated HEMT. Therefore, the composite channel double-doped HEMT has better radiation resistance and is more suitable for being applied to the space radiation environment.
The foregoing examples are illustrative of embodiments of the present invention, and although the present invention has been illustrated and described with reference to specific examples, it should be appreciated that embodiments of the present invention are not limited by the examples, and that various changes, modifications, substitutions, combinations, and simplifications made without departing from the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The proton irradiation resistant InP-based HEMT device is characterized in that an epitaxial structure of the InP-based HEMT comprises an InP substrate, an InAlAs buffer layer, an InGaAs/InAs/AlInGaAs composite channel layer, an InAlAs lower isolating layer, an Si lower doping layer, an InAlAs upper isolating layer, an Si upper doping layer, an InAlAs Schottky barrier layer, an InP corrosion stop layer and an InGaAs cap layer from bottom to top; the InAlAs buffer layer is provided with a source region isolation table board, two sides of the high-doped InGaAs cap layer are respectively provided with source electrode ohmic contact metal and drain electrode ohmic contact metal, an InP corrosion cut-off layer between the source electrode ohmic contact metal and the drain electrode ohmic contact metal or an InAlAs Schottky barrier layer is provided with T-shaped gate Schottky contact metal, source electrode wiring metal is arranged on the InAlAs buffer layer under the source electrode ohmic contact metal and the active region isolation table board, drain electrode wiring metal is arranged on the drain electrode ohmic contact metal and the InAlAs buffer layer under the active region isolation table board, and gate electrode wiring metal is arranged on the InAlAs buffer layer under the active region isolation table board.
2. The device of claim 1, wherein the InP substrate has a thickness of 100 μm and the InAlAs buffer layer has a thickness500nm, the thickness of the InGaAs/InAs/AlInGaAs composite channel layer is 15 nm, the thickness of the InAlAs lower isolation layer is 3 nm, and the doping density of the doping layer below the Si is 5 × 1012cm-2The thickness of the InAlAs upper isolating layer is 2nm, and the doping density of the Si upper doping layer is 2 × 1011cm-2The thickness of the InAlAs Schottky barrier layer is 10nm, the thickness of the InP corrosion stop layer is 5 nm, the thickness of the InGaAs cap layer is 15 nm, and the doping concentration is 3 × 1019cm-2。
3. The device of claim 1, wherein the InGaAs/InAs/AlInGaAs composite channel layer comprises a 3 nm thick InGaAs layer, a 2nm thick InAs layer, and a 10nm thick AlInGaAs layer; the proportion of each element In the InGaAs/InAs/AlInGaAs composite channel layer is In0.53Ga0.47As/InAs/In0.53(Al0.7Ga0.3)0.47As; the proportion of each element of the InAlAs barrier layer and the buffer layer is In0.52Al0.48As; the proportion of each element of the InGaAs cap layer is In0.53Ga0.47As。
4. The method for fabricating an anti-proton irradiation InP-based HEMT device based on a composite channel and a double doped layer as claimed in any one of claims 1-3, comprising the steps of:
A. preparing an InP-based InAlAs/InGaAs HEMT epitaxial wafer, cleaning the epitaxial wafer until the surface of the epitaxial wafer under a microscope is free from contamination, and drying by adopting nitrogen; the epitaxial wafer sequentially comprises an InP substrate, an InAlAs buffer layer, an InGaAs/InAs/AlInGaAs composite channel layer, an InAlAs lower isolating layer, a Si lower doped layer, an InAlAs upper isolating layer, a Si upper doped layer, an InAlAs Schottky barrier layer, an InP corrosion stop layer and an InGaAs cap layer from bottom to top;
B. forming an active region isolation table board on the epitaxial wafer through positive photoetching, corroding part of the InAlAs buffer layer, corroding the InGaAs cap layer by using mixed corrosive liquid of phosphoric acid and hydrogen peroxide, corroding the InP corrosion stop layer by using mixed corrosive liquid of phosphoric acid and hydrochloric acid, and corroding the InAlAs Schottky barrier layer, the InGaAs/InAs/AlInGaAs composite channel layer and the InAlAs buffer layer by using mixed corrosive liquid of phosphoric acid and hydrogen peroxide;
C. defining a metal area of ohmic contact of a source electrode and a metal area of ohmic contact of a drain electrode on two sides of a highly doped InGaAs cap layer of an active area isolated from a mesa by photoetching, depositing a metal film Ti/Pt/Au on the metal area of ohmic contact of the source electrode and the metal area of ohmic contact of the drain electrode by adopting electron beam evaporation equipment or sputtering furnace equipment, and forming ohmic contact of the source electrode and the drain electrode on the highly doped InGaAs cap layer by the operations;
D. defining a source wiring metal region on the InAlAs buffer layer under the source ohmic contact and active region isolation platform surface, defining a drain wiring metal region on the InAlAs buffer layer under the drain ohmic contact and active region isolation platform surface, defining a grid wiring metal region on the InAlAs buffer layer under the active region isolation platform surface, depositing a metal film Ti/Au on the wiring metal region by adopting electron beam evaporation equipment or sputtering furnace equipment, and forming wiring metal through the above operations;
E. forming a T-shaped gate between a metal area in ohmic contact with a source electrode and a metal area in ohmic contact with a drain electrode, wherein the three steps of forming the T-shaped gate morphology by electron beam lithography, preparing a gate groove and preparing gate metal are included;
firstly, forming a T-shaped gate morphology on a highly doped InGaAs cap layer between a metal area contacted with a source electrode and a metal area contacted with a drain electrode by adopting PMMA/Al/UVIII three-layer electron beam glue and adopting a method of electron beam Exposure (EBL) and development for two times;
secondly, preparing a gate groove;
and finally, depositing a Ti/Pt/Au gate metal film in the gate groove by adopting electron beam evaporation or sputtering furnace equipment, and connecting the Ti/Pt/Au gate metal film with gate wiring metal to obtain the InP-based HEMT.
5. The processing method according to claim 4, wherein the volume ratio of the mixed corrosive liquid of phosphoric acid and hydrogen peroxide in the step B is H3PO4:H2O2:H2O =3:1: 40-60; the volume ratio of the phosphoric acid and the hydrochloric acid mixed corrosive liquid is HCl to H3PO41: 3-5; InAlAs buffer layer over-etching15-30 nm。
6. The process of claim 4 wherein the thickness of the deposited metal film in step C is: 10 to 20nm of Ti, 10 to 20nm of Pt and 300 to 500nm of Au.
7. The process of claim 4 wherein the thickness of the deposited metal film in step D is: 10 to 20nm of Ti and 300 to 500nm of Au.
8. The processing method according to claim 4, wherein the T-shaped grid feature forming process in step E is to form a PMMA/Al/UVIII three-layer electron beam glue layer on the wafer, and the thicknesses of the layers are PMMA: 80-200 nm, Al: 7-15 nm, UVIII: 500-700 nm; the dosage of the UVIII electron beam adhesive layer in electron beam exposure is as follows: 100 uC; developing CD26 for 60-90 sec; the dosage of PMMA electron beam glue layer exposed by electron beams is as follows: 800-1200 uC; and developing the solution for 2.5-3.5 min by using o-xylene.
9. The process of claim 4, wherein the preparation of the gate trench in step E comprises two ways:
10. The processing method according to claim 4, wherein the volume ratio of the mixed corrosive liquid of phosphoric acid and hydrogen peroxide in the step E is H3PO4:H2O2:H2O =3:1: 40-60; the etching thickness is 3-4 nm, the flow rate of Ar plasma is 15-30 sccm, and the radio frequency power is 5-20 mW; the thickness of the gate metal film is as follows: 10 to 20nm of Ti, 10 to 20nm of Pt and 300 to 500nm of Au.
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