CN102299170A - GaAs pseudomorphic high-electron-mobility transistor epitaxy material - Google Patents
GaAs pseudomorphic high-electron-mobility transistor epitaxy material Download PDFInfo
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- CN102299170A CN102299170A CN2011102242904A CN201110224290A CN102299170A CN 102299170 A CN102299170 A CN 102299170A CN 2011102242904 A CN2011102242904 A CN 2011102242904A CN 201110224290 A CN201110224290 A CN 201110224290A CN 102299170 A CN102299170 A CN 102299170A
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Abstract
The invention relates to a GaAs pseudomorphic high-electron-mobility transistor epitaxy material, which belongs to a heterogeneous structure of the GaAs pseudomorphic high-electron-mobility transistor epitaxy material with double-AlAs thin insertion layers and is structurally characterized in that an undoped AlGaAs buffer layer, a delta doping layer, an undoped AlGaAs isolation layer, an undoped AlGaAs insertion layer, an undoped InGaAs channel layer, an undoped AlAs insertion layer, a delta doping layer, an undoped AlGaAs barrier layer and an undoped GaAs cap layer which sequentially grow layer by layer are formed on a substrate layer through molecular beam epitaxy or metal organic chemical vapor deposition. The GaAs pseudomorphic high-electron-mobility transistor epitaxy material has the advantages that GaAs pseudomorphic high-electron-mobility transistors prepared by adopting the epitaxy material can effectively enhance the two-dimensional characteristics of the electron conveyance, so that the channel electron mobility is improved, the power additional efficiency (PAE) of devices is improved, and in addition, the linear characteristic of the devices is improved.
Description
Technical field
What the present invention relates to is a kind of GaAs pseudomorphic high electron mobility transistor epitaxial material, specifically a kind of pair of thin insert layer enhancement mode GaAs pseudomorphic high electron mobility transistor epitaxial material of AlAs.Belong to technical field of semiconductor device.
Background technology:
What GaAs HEMT device used is the AlGaAs/GaAs heterostructure.The lattice constant of AlGaAs and GaAs are very approaching, and the barrier layer of the different al of growing easily component ratio and different-thickness is for the barrier layer optimal design provides convenience.But GaAs is a direct gap semiconductor, and AlGaAs just is transformed into indirect gap semiconductor when the Al component is bigger.What generation was very strong in the AlGaAs/GaAs heterostructure can be with mixing.But also to produce the DX center.Therefore, all only use 0.25 Al component ratio in the present HEMT device, the leeway of having limited the optimal design barrier layer greatly.Impel people all to go to consider the optimal design of potential well layer.Substitute the GaAs raceway groove with the InGaAs layer, not only utilize the low effective mass of InAs to enlarge markedly the mobility of electron gas and the big two-dimensional characteristics that can strengthen electron gas with band gap again between InGaAs and barrier layer.But the Macrolattice mismatch between InAs and GaAs has increased the difficulty that heterojunction material is grown.Be subjected to the restriction of lattice strain, the In component ratio of pHEMT raceway groove can not be greater than 0.3.The two-dimensional characteristics that experimental results show that electron gas is strong more, and device performance is good more.With regard to the contrast by GaN and GaAs device, the mobility ratio GaN of GaAs raceway groove trap electron gas is high 4 ~ 5 times, and the ohmic contact resistance of GaAs is than the low magnitude of GaN.As everyone knows, electron mobility and ohmic contact resistance are the keys of decision device PAE.The PAE of GaAs HEMT just should be more much higher than GaN.The present the highest PAE of two kinds of devices is about 70%.Exactly because of the big two-dimensional characteristics that can significantly strengthen electron gas in the GaN heterostructure, remedied the deficiency of its mobility and contact resistance aspect with band gap and strong polarization charge.Thus, effectively cut out the quantum limit that method that the AlGaAs barrier layer can be with is strengthened the raceway groove trap, just can further improve the radio-frequency performance of device if can find.On the other hand, the researcher can be with in the simulation that changes at big grid voltage change lower channel trap and find that the shape of positive and negative gate bias lower channel trap takes place to tilt significantly, and channel electrons is overflowed outside the trap, become three-dimensional electronic, cause the decline of device radio frequency operation performance.In the AlGaN/GaN heterostructure,, be difficult to make back of the body potential barrier though the positive polarization electric charge under the Ga face polarity has significantly improved the electron gas density in the raceway groove.Under N face polarity, can utilize the negative polarization electric charge on the heterogeneous interface to make strong back of the body potential barrier, but early barrier is more weak again.Be difficult to solve the tilt problem that radio frequency grid swing lower channel trap can be with.And do not exist polarization charge, people to wish to cut out in the GaAs heterostructure by being with, and improve potential barrier, perhaps deepen potential well to solve this and can be with tilt problem, thereby promote the electric property of GaAs pHEMT.
Summary of the invention:
What the present invention proposed is a kind of GaAs pseudomorphic high electron mobility transistor epitaxial material, its objective is and to solve existing in prior technology the problems referred to above, can make GaAs pseudomorphic high electron mobility transistor with this material preparation under normal working voltage, the two-dimensional characteristics that keeps electron transport in the raceway groove, improve operating current, keep good pinch-off behavior.
Technical solution of the present invention: its structure be from semi-insulating GaAs, semi-insulating silicon, semi-insulating germanium and sapphire, select a kind of as substrate layer, on this substrate layer by molecular beam epitaxy or metal organic chemical vapor deposition growth successively successively:
---unadulterated AlGaAs resilient coating;
---delta doping layer;
---unadulterated AlGaAs separator;
---unadulterated AlAs insert layer;
---unadulterated InGaAs channel layer;
---unadulterated AlAs insert layer;
---delta doping layer;
---unadulterated AlGaAs barrier layer;
---unadulterated GaAs cap layer
The present invention has the following advantages:
1) the GaAs pseudomorphic high electron mobility transistor that adopts epitaxial material of the present invention to prepare under the operate as normal grid voltage, can effectively be suppressed at electronics in the raceway groove trap, keeps strong two-dimensional characteristics, thereby realizes higher operating current.By contrast, conventional GaAs pseudomorphic high electron mobility transistor is under the influence of positive minus gate voltage, and electronics is penetrated in barrier layer or the separator easily, is converted into three-dimensional state, and the electron transport ability descends thereupon.2) adopt the GaAs pseudomorphic high electron mobility transistor of epitaxial material preparation of the present invention, under the high workload current condition, can suppress effectively that electronics has improved the reliability of device to surperficial transition in the raceway groove trap.Chang Gui GaAs pseudomorphic high electron mobility transistor easily to the device surface transition, forms empty grid behind the electron collision under the high workload current conditions by contrast, causes current collapse.3) adopt the GaAs pseudomorphic high electron mobility transistor of epitaxial material preparation of the present invention, can effectively improve electron mobility, improve the power added efficiency (PAE) of device and improve the linear characteristic of device.
Description of drawings:
Fig. 1 is the profile of conventional GaAs pseudomorphic high electron mobility transistor epitaxial material;
Fig. 2 is the thin counterfeit high electron mobilities of joining of insert layer enhancement mode GaAs of two AlAs of embodiments of the invention
The cutaway view of transistor epitaxial material;
Fig. 3 A is the raceway groove trap energy band diagram under conventional GaAs pHEMT zero grid voltage.
Fig. 3 B is the raceway groove trap energy band diagram under the positive grid voltage of conventional GaAs pHEMT.
Fig. 3 C is the raceway groove trap energy band diagram under the conventional GaAs pHEMT minus gate voltage.
Fig. 4 A is the raceway groove trap energy band diagram under embodiment GaAs pHEMT zero grid voltage.
Fig. 4 B is the raceway groove trap energy band diagram under the positive grid voltage of embodiment GaAs pHEMT.
Fig. 4 C is the raceway groove trap energy band diagram under the embodiment GaAs pHEMT minus gate voltage.
Embodiment:
---unadulterated AlGaAs resilient coating 2;
---delta doping layer 3;
---unadulterated AlGaAs separator 4;
---unadulterated AlAs insert layer 5;
---unadulterated InGaAs channel layer 6;
---unadulterated AlAs insert layer 7;
---delta doping layer 8;
---unadulterated AlGaAs barrier layer 9;
---unadulterated GaAs cap layer 10
Wherein, described unadulterated AlGaAs resilient coating is a sandwich construction, and resilient coating is the sandwich construction or the Al of Al content gradually variational
xGa
1-xThe superlattice period structure of As/GaAs, Al in each AlGaAs sublayer and Ga component are also non-constant, uppermost sublayer Al
xGa
1-xThe As lattice constant requires and InGaAs channel layer coupling, x value 0.2～0.8, preferred 0.25; Described unadulterated AlGaAs resilient coating adopts Al
xGa
1-xThe superlattice period structure of As/GaAs, gross thickness are 250nm～400nm, and preferred thickness is 350nm, and sublayer thickness is 10～40nm, and preferred thickness is 30nm, and the corresponding sublayer number of plies/superlattice period number is 15～20.
Delta doping layer on the described AlGaAs resilient coating, institute's doping is a silicon, its doping content is 1.00 * 10
12Cm
-2～3.00 * 10
12Cm
-2
Described unadulterated AlGaAs separator, Al
xGa
1-xThe As lattice constant requires and unadulterated InGaAs channel layer coupling, x value 0.2～0.8, and thickness is 2～5nm.
Described two unadulterated AlAs insert layers, thickness is 1～5nm.
Described unadulterated InGaAs channel layer, In
xGa
1-xIn the As material, x value 0.1～0.6, thickness is 5～40nm.
Delta doping layer under the described unadulterated GaAs cap layer, it adopts sila matter to mix, and doping content is 2.00 * 10
12Cm
-2～5.00 * 10
12Cm
-2
Described unadulterated AlGaAs barrier layer, Al
xGa
1-xThe As lattice constant requires and unadulterated InGaAs channel layer coupling, x value 0.2～0.8, and thickness is 10～50nm, described unadulterated GaAs cap layer, thickness is 1～20nm.
GaAs pHEMT work journey of the present invention such as Fig. 4 A-4C, under zero/just/minus gate voltage, the AlAs of channel layer both sides inserts thin layer can effectively improve the barrier height of raceway groove trap both sides, and electronics is suppressed in the raceway groove trap, keep strong two-dimensional characteristics, thereby realize higher operating current.By contrast, as Fig. 3 A-3C, conventional GaAs pseudomorphic high electron mobility transistor is under the influence of zero/just/minus gate voltage, and electronics is penetrated in barrier layer or the separator easily, is converted into three-dimensional state, and the electron transport ability descends thereupon.
Adopt the GaAs pseudomorphic high electron mobility transistor of epitaxial material preparation of the present invention, the two-dimensional characteristics that the effective strengthening electronic of energy transports, improve channel electron mobility, improve the power added efficiency (PAE) of device and improve the linear characteristic of device.
Claims (10)
1. the epitaxial material of a GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor, it is characterized in that from semi-insulating GaAs, semi-insulating silicon, select a kind ofly in semi-insulating germanium or the sapphire, go up by molecular beam epitaxy or metal organic chemical vapor deposition the AlGaAs resilient coating (2) of grow doping successively successively at this substrate layer (1) as substrate layer (1), first delta doping layer (3), AlGaAs separator (4), AlAs insert layer (5), InGaAs channel layer (6), AlAs insert layer (7), second delta doping layer (8), AlGaAs barrier layer (9), GaAs cap layer (10).
2. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1 is characterized in that substrate (1) is the semi-insulating GaAs substrate, or a kind of in semi-insulating silicon, semi-insulating germanium and the sapphire.
3. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1, it is characterized in that AlGaAs resilient coating (2), AlGaAs separator (4), InGaAs channel layer (6) ternary/multicomponent material epitaxial loayer, its component note is Al
xGa
1-xAs, In
xGa
1-xAs, wherein the x value is between 0 to 1.
4. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1, it is characterized in that AlGaAs resilient coating (2) is a sandwich construction, do not mix, Al in each AlGaAs sublayer and Ga component are also non-constant, uppermost sublayer Al
xGa
1-xThe As lattice constant requires and InGaAs channel layer (6) coupling, x value 0.2～0.8; Resilient coating (2) is the sandwich construction of Al content gradually variational, or Al
xGa
1-xThe periodic structure of As/GaAs, gross thickness are 250nm～400nm, and sublayer thickness is 10～40nm.
5. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1 is characterized in that first delta doping layer (3), and it adopts sila matter to mix, and doping content is 1.00 * 10
12Cm
-2～3.00 * 10
12Cm
-2
6. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1 is characterized in that AlGaAs separator (4), does not mix Al
xGa
1-xThe As lattice constant requires and InGaAs channel layer (6) coupling, x value 0.2～0.8, and thickness is 2～5nm.
7. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1, it is characterized in that AlAs insert layer (5) can be the high barrier material layer with InGaAs channel layer (6) lattice constant match, as InGaP, do not mix, thickness is 1～5nm.
8. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1 is characterized in that InGaAs channel layer (6), does not mix In
xGa
1-xIn the As material, x value 0.1～0.6, thickness is 5～40nm.
9. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1, it is characterized in that AlAs insert layer (7) also can be the high barrier material layer with InGaAs channel layer (6) lattice constant match, as InGaP, do not mix, thickness is 1～5nm.
10. the epitaxial material of a kind of GaAs pseudomorphic high electron mobility transistor High Electron Mobility Transistor as claimed in claim 1 is characterized in that second delta doping layer (8), and it adopts sila matter to mix, and doping content is 2.00 * 10
12Cm
-2～5.00 * 10
12Cm
-2AlGaAs barrier layer (9) does not mix Al
xGa
1-xThe As lattice constant requires and InGaAs channel layer (6) coupling, x value 0.2～0.8, and thickness is 10～50nm; GaAs cap layer (10) does not mix, and thickness is 1～20nm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103337517A (en) * | 2013-06-09 | 2013-10-02 | 中国电子科技集团公司第十三研究所 | III-nitride-based device structure containing multi-layer back-barrier |
| CN111370484A (en) * | 2020-03-31 | 2020-07-03 | 郑州大学 | Proton irradiation resistant InP-based HEMT device based on composite channel and double doped layers and processing method thereof |
| CN115274826A (en) * | 2022-08-18 | 2022-11-01 | 上海新微半导体有限公司 | Pseudomorphic high electron mobility transistor, epitaxial structure and preparation method |
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| CN1507660A (en) * | 2001-03-02 | 2004-06-23 | �����Ҹ��ݴ�ѧ | A modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103337517A (en) * | 2013-06-09 | 2013-10-02 | 中国电子科技集团公司第十三研究所 | III-nitride-based device structure containing multi-layer back-barrier |
| CN111370484A (en) * | 2020-03-31 | 2020-07-03 | 郑州大学 | Proton irradiation resistant InP-based HEMT device based on composite channel and double doped layers and processing method thereof |
| CN111370484B (en) * | 2020-03-31 | 2023-02-24 | 郑州大学 | Proton irradiation resistant InP-based HEMT device based on composite channel and double doped layers and processing method thereof |
| CN115274826A (en) * | 2022-08-18 | 2022-11-01 | 上海新微半导体有限公司 | Pseudomorphic high electron mobility transistor, epitaxial structure and preparation method |
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