CN109742144B - Groove gate enhanced MISHEMT device and manufacturing method thereof - Google Patents
Groove gate enhanced MISHEMT device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a groove gate enhanced MISHEMT device, which comprises a substrate; a SiN nucleating layer which is positioned on the substrate and is subjected to heteroepitaxial growth; epitaxially grown GaN on the SiN nucleation layerA buffer layer; an AlGaN back barrier layer epitaxially grown on the GaN buffer layer; a GaN channel layer epitaxially grown on the AlGaN back barrier layer; an AlGaN barrier layer epitaxially grown on the GaN channel layer; the first AlGaN modulation layer is positioned on the AlGaN barrier layer and epitaxially grows; a second AlGaN modulation layer epitaxially grown on the first AlGaN modulation layer; a concave gate groove is etched in the middle of the second AlGaN modulation layer, and Al is deposited on the surface of the concave gate groove2O3The device of the present invention is advantageous in that the breakdown voltage is increased, the threshold voltage is increased, and the saturation current density is increased.
Description
Technical Field
The invention relates to the technical field of AlGaN/GaN heterojunction field effect transistors, in particular to a groove gate enhanced MISHEMT device and a manufacturing method thereof.
Background
Compared with the traditional first-generation semiconductor Ge and Si and second-generation semiconductor materials GaAs, InP and other materials, the GaN-based semiconductor has the excellent characteristics of large forbidden bandwidth, high breakdown electric field, high electronic saturation migration speed, easy formation of heterostructure, strong spontaneous and piezoelectric polarization effect, strong radiation resistance, good chemical property stability and the like. GaN can form a heterojunction with nitride semiconductor materials such as AlGaN and InAlN, and during epitaxial growth, band step discontinuity and spontaneous polarization and piezoelectric polarization at the heterojunction interface can generate high-concentration two-dimensional electron gas (2DEG) at the heterojunction interface. The output power density of the GaN-based power device is 10 times that of the GaAs-based power device, and the output power of the GaN-based power device can be larger under the same size, so that the weight of the device is obviously reduced, the number of system components is reduced, and the reliability of the system is improved. Meanwhile, the GaN-based device has higher working voltage and can work at 42V. The operating frequency of GaN-based power devices may cover a frequency range of 1 to 100 GHz. Therefore, the GaN material is particularly suitable for preparing a new-generation high-performance microwave power HEMT device with high temperature, high frequency, high power and radiation resistance and a high-voltage low-loss HEMT electronic power device, and has wide and special application prospect.
Because the AlGaN/GaN heterojunction has extremely strong polarization effect and can generate a high-concentration two-dimensional electron gas conducting channel at a heterointerface, the traditional AlGaN/GaN HEMT device belongs to a normally open device, and the threshold voltage of the device is a negative value. However, in the circuit application process of the normally-on device, the device is turned off only by applying negative voltage to the gate of the device, which not only increases the extra power consumption of the system, but also is susceptible to noise signals in the circuit to cause the problem of false opening, so that the safety of the system is reduced. Therefore, the research on the enhanced AlGaN/GaN HEMT with high performance is of great significance.
At present, the implementation method of the enhanced GaN HEMT device includes: p-type gate, F ion implantation, recessed gate trench, thin barrier layer, etc. The threshold voltage of a device obtained by adding a p-type gate and the range of the borne gate voltage are small, so that the problem is brought to the packaging of a transistor; although the F ion implantation process is simple, the problems of unstable threshold voltage, poor reliability and the like exist; the barrier layer is thinned to achieve the enhancement purpose at the cost of sacrificing the two-dimensional electron gas concentration of all areas, and the performance of the device is reduced. The concave gate groove technology only etches the barrier layer under the gate to a certain depth, so that the barrier layer under the gate becomes thinner, the two-dimensional electron gas concentration is reduced, and the purpose of enhancement is achieved. Therefore, the enhancement type GaN HEMT device realized by using the groove grid structure is widely applied.
In the etching process of the gate trench, in order to control the gate leakage, a layer of dielectric is usually deposited to form a metal-dielectric-semiconductor (MIS) structure after the trench is etched. Therefore, the condition of grid leakage of the concave grid groove AlGaN/GaN HEMT device is improved, and the swing of grid voltage can be increased.
When the groove gate is manufactured, in order to ensure that the two-dimensional electron gas under the gate is exhausted, the etching depth is increased. However, the AlGaN/GaN HEMT has a multi-layer epitaxial structure and the materials of each layerDifferent materials and different etching rates are adopted, the depth of the concave gate groove is difficult to control through etching time, the process is difficult to control, great damage is brought to devices, and the threshold voltage V is causedthThe leakage current of the device is increased, and the like. Therefore, it is necessary to provide a new structure to solve the above problems.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a groove gate enhanced MISHEMT device and a manufacturing method thereof.
The purpose of the invention is realized by the following technical scheme:
a trench-gate enhanced MISHEMT device comprising:
a substrate;
a SiN nucleating layer which is positioned on the substrate and is subjected to heteroepitaxial growth;
a GaN buffer layer epitaxially grown on the SiN nucleation layer;
an AlGaN back barrier layer epitaxially grown on the GaN buffer layer;
a GaN channel layer epitaxially grown on the AlGaN back barrier layer;
an AlGaN barrier layer epitaxially grown on the GaN channel layer;
the first AlGaN modulation layer is positioned on the AlGaN barrier layer and epitaxially grows;
a second AlGaN modulation layer epitaxially grown on the first AlGaN modulation layer; a concave gate groove is etched in the middle of the second AlGaN modulation layer, and Al is deposited on the surface of the concave gate groove2O3The inner cavity of the concave gate groove is filled with a metal electrode which is used as a gate; ohmic contacts are formed on the surfaces of the two sides of the second AlGaN modulation layer and are respectively used as a source electrode and a drain electrode; the first AlGaN modulation layer, the AlGaN barrier layer and the GaN channel layer form a first double heterojunction, and the AlGaN barrier layer, the GaN channel layer and the AlGaN back barrier layer form a second double heterojunction.
Preferably, the Al content in the AlGaN back barrier layer is lower than the Al content in the AlGaN barrier layer; the Al content in the first AlGaN modulation layer is lower than that in the AlGaN barrier layer, and the Al content in the second AlGaN modulation layer is higher than that in the AlGaN barrier layer.
Preferably, the thickness of the AlGaN back barrier layer is 20 nm; the thickness of the first AlGaN modulation layer is 10 nm; the thickness of the second AlGaN modulation layer is 25 nm.
Preferably, the width of a recessed gate groove etched in the middle of the second AlGaN modulation layer is 1 μm, and the depth of the recessed gate groove is 30 nm; al (Al)2O3The thickness of the insulating layer is 0.1 μm, and the length of the gate is 0.8 μm.
Preferably, the source and drain are each 1 μm in length.
Preferably, the epitaxially grown GaN buffer layer has an n-type resistance characteristic or a semi-insulating characteristic.
Preferably, the material of the substrate is any one of silicon, silicon carbide, gallium nitride or sapphire.
The manufacturing method of the groove gate enhanced MISHEMT device comprises the following steps:
(1) cleaning the semi-insulating substrate and removing surface pollutants;
(2) epitaxially growing a 40nm thick SiN nucleating layer on a semi-insulating substrate by MOCVD technology;
(3) a GaN buffer layer with the thickness of 3 mu m is extended on the SiN nucleating layer;
(4) epitaxially growing an AlGaN back barrier layer with the thickness of 20nm on the GaN buffer layer, and controlling the Al content in the AlGaN back barrier layer to be 7% in the process of film growth;
(5) epitaxially growing a GaN channel layer with the thickness of 15nm on the AlGaN back barrier layer;
(6) sequentially epitaxially growing an AlGaN barrier layer with the thickness of 10nm, a first AlGaN modulation layer with the thickness of 10nm and a second AlGaN modulation layer with the thickness of 25nm on the GaN channel layer, and respectively controlling the content of Al to be 15%, 7% and 25%;
(7) performing mesa isolation on the second AlGaN modulation layer by adopting an ICP (inductively coupled plasma) etching method to form isolation of an active region;
(8) depositing Ti/Al/Ni/Au multilayer metals on the surfaces of the two sides of the second AlGaN modulation layer in sequence by using an electron beam evaporation method, and quickly annealing to form a source electrode and a drain electrode which are 1 mu m long on the two sides of the second AlGaN modulation layer after a stripping process;
(9) photoetching between a drain and a source to manufacture a concave gate groove, and etching a gate groove with the thickness of 30nm and the width of 1 mu m by utilizing an ICP (inductively coupled plasma) etching technology;
(10) al with 0.1 μm thickness deposited by ALD2O3As a gate dielectric;
(11) preparing gate metal by magnetron sputtering deposition and stripping process, and preparing gate metal on Al2O3Depositing gate metal on the surface of the gate dielectric;
(12) and (3) performing final surface passivation on the double modulation layer AlGaN/GaN/AlGaN MISHEMT device formed in the steps (1) to (11) to form an electrode pressure welding point, and finally preparing the groove gate enhanced MISHEMT device capable of being electrically tested.
Compared with the prior art, the invention has the following advantages:
and the threshold voltage is increased, a double-heterojunction structure is introduced into the concave gate groove structure, and the double-heterojunction structure has smaller two-dimensional electron gas, so that the enhancement of the device can be realized only by etching with smaller depth, and the threshold voltage is increased.
The breakdown voltage is improved, and in a double heterojunction structure formed by the first AlGaN modulation layer, the second AlGaN barrier layer and the GaN channel layer, the concentration of two-dimensional electron gas is reduced due to the generation of two-dimensional hole gas; the double heterojunction structure composed of the AlGaN back barrier layer, the GaN channel layer and the AlGaN barrier layer enables two-dimensional electron gas to be limited in the quantum well due to the existence of the AlGaN back barrier layer. The reduction of the two-dimensional electron gas enables the buffer current of the device in an off state to be smaller and the breakdown voltage to be increased.
And thirdly, the saturation current density is increased, the content of Al in the second AlGaN modulation layer is relatively high, so that the difference value between the lattice constant of the second AlGaN modulation layer and the GaN barrier layer is increased, the piezoelectric polarization charge density generated by the second AlGaN modulation layer and the GaN barrier layer is increased, the concentration of two-dimensional electron gas is increased, and the saturation current density of the device is increased.
Drawings
Fig. 1 is a schematic structural view of a trench gate enhancement type MISHEMT device of the present invention.
Fig. 2 is a schematic structural view of a conventional AlGaN/GaN MISHEMT device.
FIG. 3 is a schematic structural view of an AlGaN/GaN/AlGaN MISHEMT device containing only a back barrier layer.
Fig. 4 is a graph comparing transfer characteristics of the three devices of fig. 1, 2 and 3.
Detailed Description
The invention is further illustrated by the following figures and examples.
Referring to fig. 1, a trench-gate enhanced MISHEMT device, comprising:
a substrate 1;
a SiN nucleation layer 2 heteroepitaxially grown on the substrate 1;
a GaN buffer layer 3 epitaxially grown on the SiN nucleation layer 2;
an AlGaN back barrier layer 4 epitaxially grown on the GaN buffer layer 3;
a GaN channel layer 5 epitaxially grown on the AlGaN back barrier layer 4;
an AlGaN barrier layer 6 epitaxially grown on the GaN channel layer 5;
a first AlGaN modulation layer 7 epitaxially grown on the AlGaN barrier layer 6;
a second AlGaN modulation layer 8 epitaxially grown on the first AlGaN modulation layer 7;
a concave gate groove is etched in the middle of the second AlGaN modulation layer 8, and Al is deposited on the surface of the concave gate groove2O3 An insulating layer 9, wherein a metal electrode is filled in the inner cavity of the concave gate groove and serves as a gate 10; ohmic contacts are formed on the surfaces of the two sides of the second AlGaN modulation layer and are respectively used as a source electrode 11 and a drain electrode 12; the first AlGaN modulation layer 7, the AlGaN barrier layer 6, and the GaN channel layer 5 form a first double heterojunction, and the AlGaN barrier layer 6, the GaN channel layer 5, and the AlGaN back barrier layer 4 form a second double heterojunction. The scheme associates the concave gate groove structure with the double heterojunction structure, increases the threshold voltage, improves the saturation current density, improves the breakdown voltage of the device, and improves the performance of the device。
In the embodiment, the MISHEMT device is a groove gate enhanced ALGAN/GAN/ALGAN MISHEMT device. The surfaces of the two sides of the second AlGaN modulation layer after ohmic contact are respectively formed and are respectively used as a source electrode 11 and a drain electrode 12; specifically, the left side of the second AlGaN modulation layer after ohmic contact is formed as the source 11, and the right side of the second AlGaN modulation layer after ohmic contact is formed as the drain 12. The metal and the semiconductor are in ohmic contact, that is, a pure resistance is formed at the contact, and the smaller the resistance, the better the resistance, so that most of the voltage drop is in an Active area (Active area) but not in the contact surface when the component operates. Therefore, the I-V characteristic is linear, the larger the slope is, the smaller the contact resistance is, and the size of the contact resistance directly influences the performance index of the device. The ohmic contact is widely applied to metal treatment, and the main measures for realizing the ohmic contact are to carry out high doping on the surface layer of a semiconductor or introduce a large number of recombination centers.
In the present embodiment, the Al content in the AlGaN back barrier layer 4 is lower than that in the AlGaN barrier layer 6; the first AlGaN modulation layer 7 has an Al content lower than that of the AlGaN barrier layer 6, and the second AlGaN modulation layer 8 has an Al content higher than that of the AlGaN barrier layer 6.
In the present embodiment, the AlGaN back barrier layer 4 has a thickness of 20 nm; the thickness of the first AlGaN modulation layer 7 is 10 nm; the second AlGaN modulation layer 8 has a thickness of 25 nm.
In this embodiment, the width of a recessed gate trench etched in the middle of the second AlGaN modulation layer 8 is 1 μm, and the depth of the recessed gate trench is 30 nm; al (Al)2O3 The insulating layer 9 has a thickness of 0.1 μm and the gate 10 has a length of 0.8 μm.
In the present embodiment, the source electrode 11 and the drain electrode 12 are each 1 μm in length.
In the present embodiment, the epitaxially grown GaN buffer layer 3 has n-type resistance characteristics or semi-insulating characteristics.
In this embodiment, the material of the substrate 1 is any one of silicon, silicon carbide, gallium nitride, and sapphire.
The manufacturing method of the groove gate enhanced MISHEMT device comprises the following steps:
(1) cleaning the semi-insulating substrate 1 and removing surface pollutants;
(2) epitaxially growing a 40 nm-thick SiN nucleation layer 2 on a semi-insulating substrate 1 by MOCVD (metal organic chemical vapor deposition) technology;
(3) a GaN buffer layer 3 with the thickness of 3 mu m is extended on the SiN nucleating layer 2;
(4) epitaxially growing an AlGaN back barrier layer 4 with the thickness of 20nm on the GaN buffer layer 3, and controlling the Al content in the AlGaN back barrier layer 4 to be 7% in the process of film growth;
(5) epitaxially growing a 15 nm-thick GaN channel layer 5 on the AlGaN back barrier layer 4;
(6) sequentially epitaxially growing an AlGaN barrier layer 6 with the thickness of 10nm, a first AlGaN modulation layer 7 with the thickness of 10nm and a second AlGaN modulation layer 8 with the thickness of 25nm on the GaN channel layer, and respectively controlling the content of Al to be 15%, 7% and 25%;
(7) performing mesa isolation on the second AlGaN modulation layer 8 by adopting an ICP (inductively coupled plasma) etching method to form isolation of an active region;
(8) depositing Ti/Al/Ni/Au multilayer metal on the surfaces of the two sides of the second AlGaN modulation layer 8 in sequence by using an electron beam evaporation method, and rapidly annealing to form a source electrode 11 and a drain electrode 12 which are 1 micron long on the two sides of the second AlGaN modulation layer 8 after a stripping process;
(9) photoetching between a drain and a source to manufacture a concave gate groove, and etching a gate groove with the thickness of 30nm and the width of 1 mu m by utilizing an ICP (inductively coupled plasma) etching technology;
(10) al with 0.1 μm thickness deposited by ALD2O3As a gate dielectric;
(11) preparing gate metal by magnetron sputtering deposition and stripping process, and preparing gate metal on Al2O3Depositing gate metal on the surface of the gate dielectric;
(12) and (3) performing final surface passivation on the double modulation layer AlGaN/GaN/AlGaN MISHEMT device formed in the steps (1) to (11) to form an electrode pressure welding point, and finally preparing the groove gate enhanced MISHEMT device capable of being electrically tested.
The groove gate enhanced type MISHEMT device (shown in figure 1) is compared with the traditional AlGaN/GaNMISHEMT device (shown in figure 2) and the AlGaN/GaN/AlGaN MISHEMT device (shown in figure 3) only comprising a back barrier layer in two aspects of threshold voltage and saturation output current, and the result is shown in figure 4; the results of fig. 4 show that the new trench-gate enhancement mode MISHEMT device with dual modulation layers is the largest in threshold voltage compared to the other two and that the saturation current density is much improved compared to AlGaN/GaN/AlGaN MISHEMTs with only back barrier layer.
Due to the introduction of the double heterojunction, the device can meet the requirement of threshold voltage without etching to a larger depth, so that the problem of unstable damage to the device in the etching process is reduced, and the voltage resistance of the device is improved; aiming at the problem of current density reduction caused by the introduction of double heterojunction, the method of adding the AlGaN modulation layer is adopted, and the saturation current density of the device is remarkably increased.
The principle that the threshold voltage and the breakdown voltage of the groove gate enhanced MISHEMT device are improved is as follows:
when the Al content of the first AlGaN modulation layer 7 is smaller than that of the AlGaN barrier layer 6, the interface between the first AlGaN modulation layer 7 and the AlGaN barrier layer 6 becomes a hole channel by a fermi potential higher than the valence band, and finally a two-dimensional hole gas (2DHG) is formed. The presence of the 2DHG may deplete the 2DEG at the interface between the first AlGaN modulation layer 7 and the AlGaN barrier layer 6.
The AlGaN barrier layer 6, the GaN channel layer 5, and the AlGaN back barrier layer 4 form a second double heterojunction, and the AlGaN back barrier layer 4 causes the GaN channel layer to be in a compressive strain state, so that the lattice constant of GaN is increased. So that the difference in lattice constant between the AlGaN barrier layer 6 and the GaN channel layer 5 becomes small, and the polarization charge density between them due to piezoelectric polarization decreases; meanwhile, due to the existence of the AlGaN back barrier layer 4, negative charges exist between the AlGaN barrier layer 6 and the GaN channel layer 5, and the AlGaN back barrier layer has a certain depletion effect on the two-dimensional electron gas, so that a conduction band of the GaN channel layer 5 is pulled high, the depth of a potential barrier is reduced, and the concentration of the two-dimensional electron gas is reduced.
Due to the reduction of the concentration of two-dimensional electron gas, the groove gate enhanced MISHEMT device with the double heterostructure can achieve enhancement of the device only by etching with a small depth, and the threshold voltage is increased. Meanwhile, the reduction of the concentration of the two-dimensional electron gas enables the buffer leakage current of the device in an off state to be very small, the device is not easy to break down, and the voltage resistance is improved. When the voltage between the drain and the source of the device is larger, the threshold voltage of the device has small change, so that the device can work more stably. And because the two-dimensional electron gas is limited in the quantum well, the 2DEG is not easy to overflow and become bulk electrons, so that the mobility of the device is increased, and the device has larger transconductance.
The concentration of channel two-dimensional electron gas is reduced by the two double-heterojunction structures, so that enhancement can be realized by etching at a lower depth when a groove gate enhancement transistor is manufactured, the process is easier to control, and damage to devices is less. The double-heterojunction device has the advantages of strong pressure resistance, high stability, high mobility and the like, and the performance of the device can be greatly improved by connecting the concave gate groove structure with the double-heterojunction structure.
The principle that the saturation current density of the groove gate enhanced MISHEMT device is improved is as follows:
compared with a single heterojunction device, the groove gate enhanced MISHEMT device with the double heterojunction has smaller two-dimensional electron gas concentration, so that the saturation current density of the device is reduced. To solve this problem, a second AlGaN modulation layer 8 having a larger Al content is introduced on the first AlGaN modulation layer 7. As the Al content increases, the spontaneous polarization and the piezoelectric polarization become larger, so that the concentration of the two-dimensional electron gas increases, and accordingly the saturation current concentration also increases.
Compared with the prior art, the invention has the beneficial effects that:
and the threshold voltage is increased, a double-heterojunction structure is introduced into the concave gate groove structure, and the double-heterojunction structure has smaller two-dimensional electron gas, so that the enhancement of the device can be realized only by etching with smaller depth, and the threshold voltage is increased.
The breakdown voltage is improved, and in a double heterojunction structure consisting of the first AlGaN modulation layer 7, the second AlGaN barrier layer 6 and the GaN channel layer 5, the concentration of two-dimensional electron gas is reduced due to the generation of two-dimensional hole gas; the double heterojunction structure composed of the AlGaN barrier layer 6, the GaN channel layer 5 and the AlGaN back barrier layer 4 enables two-dimensional electron gas to be limited in a quantum well due to the existence of the AlGaN back barrier. The reduction of the two-dimensional electron gas enables the buffer current of the device in an off state to be smaller and the breakdown voltage to be increased.
And thirdly, the saturation current density is increased, the content of Al in the second AlGaN modulation layer 8 is relatively high, so that the difference value between the lattice constant of the second AlGaN modulation layer 8 and the GaN barrier layer is increased, the piezoelectric polarization charge density generated by the second AlGaN modulation layer and the GaN barrier layer is increased, the concentration of two-dimensional electron gas is increased, and the saturation current density of the device is increased.
The above-mentioned embodiments are preferred embodiments of the present invention, and the present invention is not limited thereto, and any other modifications or equivalent substitutions that do not depart from the technical spirit of the present invention are included in the scope of the present invention.
Claims (8)
1. A trench-gate enhanced MISHEMT device, comprising:
a substrate;
a SiN nucleating layer which is positioned on the substrate and is subjected to heteroepitaxial growth;
a GaN buffer layer epitaxially grown on the SiN nucleation layer;
an AlGaN back barrier layer epitaxially grown on the GaN buffer layer;
a GaN channel layer epitaxially grown on the AlGaN back barrier layer;
an AlGaN barrier layer epitaxially grown on the GaN channel layer;
the first AlGaN modulation layer is positioned on the AlGaN barrier layer and epitaxially grows;
a second AlGaN modulation layer epitaxially grown on the first AlGaN modulation layer;
a concave gate groove is etched in the middle of the second AlGaN modulation layer, and Al is deposited on the surface of the concave gate groove2O3Insulating layer of the recessed gate trenchThe inner cavity is filled with a metal electrode which is used as a grid; ohmic contacts are formed on the surfaces of the two sides of the second AlGaN modulation layer and are respectively used as a source electrode and a drain electrode;
the first AlGaN modulation layer, the AlGaN barrier layer and the GaN channel layer form a first double heterojunction, and the AlGaN barrier layer, the GaN channel layer and the AlGaN back barrier layer form a second double heterojunction;
the Al content in the first AlGaN modulation layer is lower than that in the AlGaN barrier layer, and the Al content in the second AlGaN modulation layer is higher than that in the AlGaN barrier layer;
for the first double heterojunction, when the Al content of the first AlGaN modulation layer is smaller than that of the AlGaN barrier layer, a Fermi potential is increased at the interface between the first AlGaN modulation layer and the AlGaN barrier layer due to the valence band to form a hole channel, and finally two-dimensional hole gas is formed;
for the second double heterojunction, the GaN channel layer is in a compressive strain state due to the existence of the AlGaN back barrier layer, so that the lattice constant of the GaN is increased; and meanwhile, negative charges which have depletion effect on the two-dimensional electron gas exist between the AlGaN barrier layer and the GaN channel layer.
2. The trench-gate enhancement mode MISHEMT device of claim 1, wherein said AlGaN back barrier layer has an Al content lower than that of said AlGaN barrier layer.
3. The trench-gate enhancement type MISHEMT device of claim 1, wherein said AlGaN back barrier layer has a thickness of 20 nm; the thickness of the first AlGaN modulation layer is 10 nm; the thickness of the second AlGaN modulation layer is 25 nm.
4. The trench-gate enhancement type MISHEMT device of claim 1, wherein said second AlGaN modulation layer has a trench width of 1 μm etched in the middle and a trench depth of 30 nm; al (Al)2O3The thickness of the insulating layer is 0.1 μm, and the length of the gate is 0.8 μm.
5. The trench-gate enhancement type MISHEMT device of claim 1, wherein each of said source and drain lengths is 1 μm.
6. The trench-gate enhancement type MISHEMT device of claim 1, wherein said epitaxially grown GaN buffer layer has n-type resistance characteristics or semi-insulating characteristics.
7. The trench-gate enhancement type MISHEMT device of claim 1, wherein said substrate is made of any one of silicon, silicon carbide, gallium nitride or sapphire.
8. The method for manufacturing a trench gate enhancement type MISHEMT device according to any one of claims 1 to 7, comprising:
(1) cleaning the semi-insulating substrate and removing surface pollutants;
(2) epitaxially growing a 40nm thick SiN nucleating layer on a semi-insulating substrate by MOCVD technology;
(3) a GaN buffer layer with the thickness of 3 mu m is extended on the SiN nucleating layer;
(4) epitaxially growing an AlGaN back barrier layer with the thickness of 20nm on the GaN buffer layer, and controlling the Al content in the AlGaN back barrier layer to be 7% in the process of film growth;
(5) epitaxially growing a GaN channel layer with the thickness of 15nm on the AlGaN back barrier layer;
(6) sequentially epitaxially growing an AlGaN barrier layer with the thickness of 10nm, a first AlGaN modulation layer with the thickness of 10nm and a second AlGaN modulation layer with the thickness of 25nm on the GaN channel layer, and respectively controlling the content of Al to be 15%, 7% and 25%;
(7) performing mesa isolation on the second AlGaN modulation layer by adopting an ICP (inductively coupled plasma) etching method to form isolation of an active region;
(8) depositing Ti/Al/Ni/Au multilayer metals on the surfaces of the two sides of the second AlGaN modulation layer in sequence by using an electron beam evaporation method, and quickly annealing to form a source electrode and a drain electrode which are 1 mu m long on the two sides of the second AlGaN modulation layer after a stripping process;
(9) photoetching between a drain and a source to manufacture a concave gate groove, and etching a gate groove with the thickness of 30nm and the width of 1 mu m by utilizing an ICP (inductively coupled plasma) etching technology;
(10) al2O3 with the thickness of 0.1 mu m is deposited as a gate dielectric by using an ALD (atomic layer deposition) deposition mode;
(11) preparing gate metal by using a magnetron sputtering mode deposition and a stripping process, and depositing the gate metal on the surface of the Al2O3 gate medium;
(12) and (3) performing final surface passivation on the groove gate enhanced MISHEMT device formed in the steps (1) to (11) to form an electrode pressure welding point, and finally manufacturing the groove gate enhanced MISHEMT device capable of being electrically tested.
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| WO2010118092A1 (en) * | 2009-04-08 | 2010-10-14 | Efficient Power Conversion Corporation | Back diffusion suppression structures |
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| US8860091B2 (en) * | 2012-04-16 | 2014-10-14 | Hrl Laboratories, Llc | Group III-N HFET with a graded barrier layer |
| US9960265B1 (en) * | 2017-02-02 | 2018-05-01 | Semiconductor Components Industries, Llc | III-V semiconductor device and method therefor |
| CN107887433B (en) * | 2017-09-21 | 2021-01-26 | 中国电子科技集团公司第五十五研究所 | Enhanced AlGaN/GaN high-electron-mobility transistor and preparation method thereof |
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