CN109742144A - A kind of enhanced MISHEMT device of slot grid and preparation method thereof - Google Patents
A kind of enhanced MISHEMT device of slot grid and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of enhanced MISHEMT devices of slot grid, including substrate；The SiN nucleating layer of heteroepitaxial growth on the substrate；The GaN buffer layer of epitaxial growth on the SiN nucleating layer；The AlGaN of the epitaxial growth on the GaN buffer layer carries on the back barrier layer；The GaN channel layer of epitaxial growth on AlGaN back barrier layer；The AlGaN potential barrier of epitaxial growth on the GaN channel layer；The first AlGaN modulating layer of epitaxial growth in the AlGaN potential barrier；The 2nd AlGaN modulating layer of epitaxial growth on the first AlGaN modulating layer；Concave grid groove is etched in the middle part of the 2nd AlGaN modulating layer, concave grid groove surface deposition has Al2O3Insulating layer, device of the invention are beneficial in that breakdown voltage increases, threshold voltage increases and saturation current density increases.
Description
Technical field
The present invention relates to AlGaN/GaN heterojunction field effect transistor technical fields, and in particular to a kind of slot grid are enhanced
MISHEMT device and preparation method thereof.
Background technique
Compared with the materials such as traditional first generation semiconductor Ge, Si and the second generation semiconductor material GaAs, InP, GaN base half
Conductor is big with forbidden bandwidth, breakdown electric field is high, electronics saturation migration velocity is high, heterojunction structure easy to form, have it is very strong
The excellent characteristics such as spontaneous and piezoelectric polarization effect, capability of resistance to radiation are strong and chemical property stability is good.GaN can with AlGaN,
The nitride semi-conductor materials such as InAlN constitute hetero-junctions, and in epitaxial growth, the band offsets at heterojunction boundary are discontinuously changed
And piezoelectricity and spontaneous polarization can be in the two-dimensional electron gas (2DEG) of heterojunction boundary generation high concentration.GaN base power device
The output power density of part is 10 times of GaAs base power device output power density, under identical size, GaN base power device
The output power of part can do more, to significantly reduce the weight of device, reduce the quantity of system component, improve
The reliability of system.Meanwhile GaN base device operating voltage with higher, it is operable with 42V.The work of GaN base power device
Working frequency can cover 1 frequency range for arriving 100GHz.Therefore, GaN material particularly useful for making high temperature, high frequency, it is high-power and
Anti-radiation high performance microwave power HEMT device and high pressure low-loss HEMT power electronic component of new generation has wide and special
Different application prospect.
Since there are extremely strong polarity effects for AlGaN/GaN hetero-junctions, the two dimension of high concentration can be generated at heterogeneous interface
Electron gas conducting channel, so traditional AlGaN/GaN HEMT device belongs to normally on device, device threshold voltage is negative value.
But normally on device, in circuit application process, only applying negative pressure in device grids can just be such that device turns off, this not only increases
The extra power consumption of system, and be easy to be influenced by noise signal in circuit, it leads to the problem of to open by mistake and opens, so that system
Safety reduces.Therefore high performance enhanced AlGaN/GaN HEMT is studied to have very important significance.
Currently, the implementation method of enhanced GaN HEMT device includes: p-type grid, F ion injection, concave grid groove, thin barrier layer
Etc. technologies.It is smaller by the gate voltage range that the obtained device threshold voltage of p-type grid and receiving is added, to the envelope of transistor
Dress brings problem；Although the problems such as F ion injects simple process, and that there are threshold voltages is unstable, poor reliability；Potential barrier is thinned
Layer achievees the purpose that enhanced, device performance decline as cost to sacrifice all areas two-dimensional electron gas.Concave grid groove technology
The barrier layer under grid is only etched into certain depth, lower barrierlayer is thinning, and two-dimensional electron gas reduces, to reach increasing so that deleting
The purpose of strong type, the barrier layer thickness in region does not change between region and grid leak between device gate source in this course,
The larger value of carrier concentration remains unchanged, and ensure that certain current density.So being realized using slot grid structure enhanced
GaN HEMT device is widely used.
Due in the etching process of grid slot, for the electric leakage of control gate grade, it will usually after etch groove, one layer of deposit
Medium forms metal-medium-semiconductor (MIS) structure.Concave grid groove AlGaN/GaN HEMT device grid are not only improved in this way
The case where grade electric leakage, moreover it is possible to increase the amplitude of oscillation of gate voltage.
When making slot grid, in order to enable two-dimensional electron gas exhausts under grid, the mode taken is to increase etching depth.But due to
AlGaN/GaN HEMT epitaxial structure is multilayer, and the material of each layer is different, therefore etch rate is also different, it is difficult to when passing through etching
Between control concave grid groove depth, be difficult to control in this way in technique, very big damage can be brought to device, will cause threshold voltage
VthUnstability, the problems such as leakage current of device increases.It is therefore desirable to propose the new structure of one kind to solve above-mentioned ask
Topic.
Summary of the invention
The purpose of the invention is to overcome above the shortcomings of the prior art, it is enhanced to provide a kind of slot grid
MISHEMT device and preparation method thereof.
The purpose of the present invention is realized by the following technical solution:
A kind of enhanced MISHEMT device of slot grid, comprising:
Substrate；
The SiN nucleating layer of heteroepitaxial growth on the substrate；
The GaN buffer layer of epitaxial growth on the SiN nucleating layer；
The AlGaN of the epitaxial growth on the GaN buffer layer carries on the back barrier layer；
The GaN channel layer of epitaxial growth on AlGaN back barrier layer；
The AlGaN potential barrier of epitaxial growth on the GaN channel layer；
The first AlGaN modulating layer of epitaxial growth in the AlGaN potential barrier；
The 2nd AlGaN modulating layer of epitaxial growth on the first AlGaN modulating layer；The 2nd AlGaN modulation
The middle part of layer is etched with concave grid groove, and concave grid groove surface deposition has Al2O3Insulating layer, the lumen loading of the concave grid groove have metal electric
Pole, the metal electrode is as grid；The surface of 2nd AlGaN modulating layer two sides is respectively formed Ohmic contact, respectively as
Source electrode and drain electrode；Wherein, the first AlGaN modulating layer, AlGaN potential barrier, GaN channel layer constitute the first double heterojunction, AlGaN gesture
Barrier layer, GaN channel layer, AlGaN back barrier layer constitute the second double heterojunction.
Preferably, the Al content in the AlGaN back barrier layer is lower than the Al content in AlGaN potential barrier；Described first
Al content is lower than the Al content in AlGaN potential barrier in AlGaN modulating layer, and Al content is higher than in the 2nd AlGaN modulating layer
Al content in AlGaN potential barrier.
Preferably, the AlGaN back barrier layer thickness is 20nm；The first AlGaN modulating layer is with a thickness of 10nm；It is described
2nd AlGaN modulating layer is with a thickness of 25nm.
Preferably, the concave grid groove width etched in the middle part of the 2nd AlGaN modulating layer is 1 μm, and concave grid groove depth is 30nm；
Al2O3Thickness of insulating layer is 0.1 μm, and the grid length is 0.8 μm.
Preferably, source electrode and drain electrode length is 1 μm.
Preferably, the GaN buffer layer of the epitaxial growth has N-shaped resistance characteristic or semi-insulating characteristic.
Preferably, the material of the substrate is any one in silicon, silicon carbide, gallium nitride or sapphire.
The production method of the enhanced MISHEMT device of above-mentioned slot grid, comprising:
(1) semi-insulated substrate is cleaned, and removes surface contaminant；
(2) pass through MOCVD technology, the SiN nucleating layer of epitaxial growth 40nm thickness on semi-insulated substrate；
(3) 3 μm of extension of GaN buffer layer on SiN nucleating layer；
(4) AlGaN of epitaxial growth 20nm thickness carries on the back barrier layer on GaN buffer layer, during film growth, control
It is 7% that AlGaN, which carries on the back Al content in barrier layer,；
(5) the GaN channel layer of epitaxial growth 15nm thickness on barrier layer is carried on the back in AlGaN；
(6) successively the first AlGaN modulation of the AlGaN potential barrier of epitaxial growth 10nm thickness, 10nm thickness on GaN channel layer
2nd AlGaN modulating layer of layer and 25nm thickness, the content for controlling Al respectively is 15%, 7%, 25%；
(7) mesa-isolated is carried out using ICP lithographic method on the 2nd AlGaN modulating layer, forms the isolation of active area；
(8) using the method for electron beam evaporation successively in the surface deposition Ti/Al/ of the 2nd AlGaN modulating layer two sides
Ni/Au multiple layer metal, after stripping technology, annealing forms 1 μm of long source electrode on the two sides of the 2nd AlGaN modulating layer rapidly
And drain electrode；
(9) photoetching making concave grid groove is carried out between drain-source, thick using ICP lithographic technique etching 30nm, 1 μm of wide grid
Slot；
(10) Al of 0.1 μ m thick is deposited in the way of ALD deposition2O3As gate medium；
(11) it is deposited in the way of magnetron sputtering and stripping technology is combined to prepare grid metal, in Al2O3Gate medium surface
Deposit grid metal；
(12) the double modulation layer AlGaN/GaN/AlGaN MISHEMT device formed through step (1)-(11) is carried out last
Surface passivation form electrode pad, the enhanced MISHEMT device of slot grid of electrical testing can be carried out by being finally made.
The present invention has the advantage that compared with the existing technology
-, threshold voltage increase, double-heterostructure is introduced in concave grid groove structure, since double-heterostructure inherently has
There is lesser two-dimensional electron gas, so that only needing to etch smaller depth, so that it may which, so that device reaches enhanced, threshold voltage increases
Greatly.
Two, breakdown voltage improves, and what is be made of the first AlGaN modulating layer, the second AlGaN potential barrier, GaN channel layer is double different
In matter junction structure, since the generation of two-dimensional hole gas is so that the concentration of two-dimensional electron gas declines；Barrier layer, GaN ditch are carried on the back by AlGaN
The double-heterostructure that channel layer, AlGaN potential barrier are constituted, since the presence of AlGaN back potential barrier limits two-dimensional electron gas
In Quantum Well.So that buffer current of the device under OFF state becomes smaller, breakdown voltage increases for the reduction of two-dimensional electron gas.
Three, saturation current density increases, and the content of Al is relatively high in the 2nd AlGaN modulating layer, so that the 2nd AlGaN tune
The lattice constant of preparative layer becomes larger with GaN barrier layer difference, and the piezoelectric polarization charge density that the two generates increases, and two-dimensional electron gas is dense
Degree increases, so that the saturation current density of device increases.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the enhanced MISHEMT device of slot grid of the invention.
Fig. 2 is the structural schematic diagram of traditional AlGaN/GaN MISHEMT device.
Fig. 3 is the structural schematic diagram for containing only the AlGaN/GaN/AlGaN MISHEMT device of back barrier layer.
Fig. 4 is the transfer characteristic curve comparison diagram of tri- kinds of devices of Fig. 1, Fig. 2, Fig. 3.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
Referring to Fig. 1, a kind of enhanced MISHEMT device of slot grid, comprising:
Substrate 1；
The SiN nucleating layer 2 of heteroepitaxial growth on the substrate 1；
The GaN buffer layer 3 of epitaxial growth on the SiN nucleating layer 2；
The AlGaN of the epitaxial growth on the GaN buffer layer 3 carries on the back barrier layer 4；
The GaN channel layer 5 of epitaxial growth on AlGaN back barrier layer 4；
The AlGaN potential barrier 6 of epitaxial growth on the GaN channel layer 5；
The first AlGaN modulating layer 7 of epitaxial growth in the AlGaN potential barrier 6；
The 2nd AlGaN modulating layer 8 of epitaxial growth on the first AlGaN modulating layer 7；
The middle part of the 2nd AlGaN modulating layer 8 is etched with concave grid groove, and concave grid groove surface deposition has Al2O3Insulating layer 9, institute
The lumen loading for stating concave grid groove has metal electrode, and the metal electrode is as grid 10；2nd AlGaN modulating layer two sides
Surface is respectively formed Ohmic contact, respectively as source electrode 11 and drain electrode 12；Wherein, the first AlGaN modulating layer 7, AlGaN potential barrier 6,
GaN channel layer 5 constitutes the first double heterojunction, and AlGaN potential barrier 6, GaN channel layer 5, AlGaN back barrier layer 4 composition second pair are different
Matter knot.This programme connects concave grid groove structure with double-heterostructure, improves saturation while increasing threshold voltage
Current density, and the breakdown voltage of device is improved, so that the performance of device is improved.
In the present embodiment, the MISHEMT device is the enhanced ALGAN/GAN/ALGAN MISHEMT device of slot grid.?
The surface of the 2nd AlGaN modulating layer two sides after forming Ohmic contact, respectively as source electrode 11 and drain electrode 12；Specifically, it is formed
The left side of the 2nd AlGaN modulating layer forms the right side of the 2nd AlGaN modulating layer after Ohmic contact as source electrode 11 after Ohmic contact
As drain electrode 12.Wherein, metal and semiconductor formation Ohmic contact refer to that in contact position be a pure resistance, and the resistance is got over
Small better, when so that component operating, most voltage drop is at behaviour area (Active region) without in contact surface.Therefore,
Its I-V characteristic is linear relationship, and the bigger contact resistance of slope is smaller, and the performance that the size of contact resistance directly affects device refers to
Mark.Ohmic contact metal processing in be widely used, the major measure of realization be semiconductor surface layer carry out it is highly doped or
Introduce a large amount of complex centres.
Al content in the present embodiment, the AlGaN back barrier layer 4 is lower than the Al content in AlGaN potential barrier 6；Institute
It states Al content in the first AlGaN modulating layer 7 and is lower than the Al content in AlGaN potential barrier 6, and Al contains in the 2nd AlGaN modulating layer 8
Amount is higher than the Al content in AlGaN potential barrier 6.
In the present embodiment, the AlGaN back barrier layer 4 is with a thickness of 20nm；The first AlGaN modulating layer 7 with a thickness of
10nm；The 2nd AlGaN modulating layer 8 is with a thickness of 25nm.
The concave grid groove width etched in the middle part of the present embodiment, the 2nd AlGaN modulating layer 8 is 1 μm, and concave grid groove depth is
30nm；Al2O3For insulating layer 9 with a thickness of 0.1 μm, 10 length of grid is 0.8 μm.
In the present embodiment, source electrode 11 and 12 length of drain electrode are 1 μm.
There is N-shaped resistance characteristic or semi-insulating characteristic in the GaN buffer layer 3 of the present embodiment, the epitaxial growth.
In the present embodiment, the material of the substrate 1 is any one in silicon, silicon carbide, gallium nitride or sapphire.
The production method of the enhanced MISHEMT device of above-mentioned slot grid, comprising:
(1) semi-insulated substrate 1 is cleaned, and removes surface contaminant；
(2) pass through MOCVD technology, the SiN nucleating layer 2 of epitaxial growth 40nm thickness on semi-insulated substrate 1；
(3) 3 μm of extension of GaN buffer layer 3 on SiN nucleating layer 2；
(4) AlGaN of epitaxial growth 20nm thickness carries on the back barrier layer 4 on GaN buffer layer 3, during film growth, control
Al content is 7% in AlGaN back barrier layer 4 processed；
(5) the GaN channel layer 5 of epitaxial growth 15nm thickness on barrier layer 4 is carried on the back in AlGaN；
(6) successively the first AlGaN tune of the AlGaN potential barrier 6 of epitaxial growth 10nm thickness, 10nm thickness on GaN channel layer
2nd AlGaN modulating layer 8 of preparative layer 7 and 25nm thickness, the content for controlling Al respectively is 15%, 7%, 25%；
(7) mesa-isolated is carried out using ICP lithographic method on the 2nd AlGaN modulating layer 8, forms the isolation of active area；
(8) using the method for electron beam evaporation successively in the surface deposition Ti/Al/ of 8 two sides of the 2nd AlGaN modulating layer
Ni/Au multiple layer metal, after stripping technology, annealing forms 1 μm of long source on the two sides of the 2nd AlGaN modulating layer 8 rapidly
Pole 11 and drain electrode 12；
(9) photoetching making concave grid groove is carried out between drain-source, thick using ICP lithographic technique etching 30nm, 1 μm of wide grid
Slot；
(10) Al of 0.1 μ m thick is deposited in the way of ALD deposition2O3As gate medium；
(11) it is deposited in the way of magnetron sputtering and stripping technology is combined to prepare grid metal, in Al2O3Gate medium surface
Deposit grid metal；
(12) the double modulation layer AlGaN/GaN/AlGaN MISHEMT device formed through step (1)-(11) is carried out last
Surface passivation form electrode pad, the enhanced MISHEMT device of slot grid of electrical testing can be carried out by being finally made.
Will it is above-mentioned made of slot grid enhanced MISHEMT devices (as shown in Figure 1) respectively with traditional AlGaN/GaN
MISHEMT device (as shown in Figure 2), contain only back barrier layer AlGaN/GaN/AlGaN MISHEMT device (as shown in Figure 3) exist
Compare in terms of threshold voltage and saturation output electric current two, as a result as shown in Figure 4；Fig. 4's the results show that novel has
The enhanced MISHEMT device of the slot grid of double modulation layer is the largest in terms of threshold voltage compared with other two kinds, and saturation current
Density is greatly improved relative to the AlGaN/GaN/AlGaN MISHEMT for containing only back barrier layer.
Due to introducing double heterojunction, so that device does not need to etch biggish depth and can reach threshold voltage and want
The problem of asking, reducing the etching process unstable damage to device while the voltage endurance capability for increasing device；For due to double
The problem of current density caused by the introducing of hetero-junctions reduces, we use the method that AlGaN modulating layer is added, dramatically increase
The saturation current density of device.
The principle that the threshold voltage and breakdown voltage of the enhanced MISHEMT device of the slot grid of this programme are improved is such as
Under:
First double heterojunction is constituted by the first AlGaN modulating layer 7, AlGaN potential barrier 6, GaN channel layer 5, when first
Al content hour of the Al content of AlGaN modulating layer 7 than AlGaN potential barrier 6, the first AlGaN modulating layer 7, AlGaN potential barrier 6
Between interface will because be higher by valence band Fermi potential formed hole channel, ultimately form two-dimensional hole gas (2DHG).2DHG's
In the presence of the 2DEG of interface between the first AlGaN modulating layer 7, AlGaN potential barrier 6 can be made to exhaust.
Second double heterojunction is constituted by AlGaN potential barrier 6, GaN channel layer 5, AlGaN back barrier layer 4, since AlGaN is carried on the back
The presence of barrier layer 4 makes GaN channel layer be in compressive strain state, so that the lattice constant of GaN becomes larger.So that AlGaN
Lattice constant difference between barrier layer 6 and GaN channel layer 5 can become smaller, due to the polarization electricity of piezoelectric polarization generation between them
Lotus density can reduce；Simultaneously as the presence of AlGaN back barrier layer 4 to deposit between AlGaN potential barrier 6 and GaN channel layer 5
In negative electrical charge, it has certain depletion action to two-dimensional electron gas, so that the conduction band of GaN channel layer 5 is raised, potential barrier depth drop
It is low, to reduce the concentration of two-dimensional electron gas.
The enhanced MISHEMT device of the slot grid of double-heterostructure due to two-dimensional electron gas reduction so that only needing
Etch smaller depth, so that it may which, so that device reaches enhanced, threshold voltage increases.Meanwhile the reduction of two-dimensional electron gas
So that device Buffer leak electric current under OFF state becomes very little, device is not easy to puncture, and pressure-resistant performance gets a promotion.When device
When voltage between drain-source is larger, the variation of very little can occur for threshold voltage, and device is more stably worked.And
Since two-dimensional electron gas is limited in Quantum Well, so that 2DEG, which is not easy to overflow, becomes body electronics, so that the mobility of device
Become larger, possesses bigger mutual conductance.
Two double heterojunctions of above-mentioned composition can all make the concentration of channel two-dimensional electron gas decline, and so, make
When making slot grid enhancement transistor, only lower depth need to be etched, so that it may realize enhanced, be easier to control, give in technique
The damage of device bring is smaller.And double heterojunction device has many advantages, such as that voltage endurance capability is strong, stability is high, mobility is big, will
Concave grid groove structure is connected with double-heterostructure, and the performance of device can be greatly improved.
The principle that the saturation current density of the enhanced MISHEMT device of the slot grid of this programme is improved is as follows:
Since the enhanced MISHEMT device of slot grid with double heterojunction is for single heterojunction device, have more
Small two-dimensional electron gas, so that the saturation current density of device declines.In order to solve this problem, in the first AlGaN tune
The bigger 2nd AlGaN modulating layer 8 of one layer of Al content is introduced on preparative layer 7.With the increase of Al content, spontaneous polarization strength and pressure
Electric polarization is bigger, so that two-dimensional electron gas increases, correspondingly saturation current concentration also increases.
The present invention has advantageous effect in that compared with the prior art:
-, threshold voltage increase, double-heterostructure is introduced in concave grid groove structure, since double-heterostructure inherently has
There is lesser two-dimensional electron gas, so that only needing to etch smaller depth, so that it may which, so that device reaches enhanced, threshold voltage increases
Greatly.
Two, breakdown voltage improves, and is made of the first AlGaN modulating layer 7, the second AlGaN potential barrier 6, GaN channel layer 5
In double-heterostructure, since the generation of two-dimensional hole gas is so that the concentration of two-dimensional electron gas declines；By AlGaN potential barrier 6,
The double-heterostructure that GaN channel layer 5, AlGaN back barrier layer 4 are constituted, since the presence of AlGaN back potential barrier makes Two-dimensional electron
Gas is limited in Quantum Well.The reduction of two-dimensional electron gas is so that buffer current of the device under OFF state becomes smaller, breakdown potential
Pressure increases.
Three, saturation current density increases, and the content of Al is relatively high in the 2nd AlGaN modulating layer 8, so that the 2nd AlGaN
The lattice constant of modulating layer 8 becomes larger with GaN barrier layer difference, and the piezoelectric polarization charge density that the two generates increases, Two-dimensional electron
Gas concentration increases, so that the saturation current density of device increases.
Above-mentioned specific embodiment is the preferred embodiment of the present invention, can not be limited the invention, and others are appointed
The change or other equivalent substitute modes what is made without departing from technical solution of the present invention, are included in protection of the invention
Within the scope of.
Claims (8)
1. a kind of enhanced MISHEMT device of slot grid characterized by comprising
Substrate；
The SiN nucleating layer of heteroepitaxial growth on the substrate；
The GaN buffer layer of epitaxial growth on the SiN nucleating layer；
The AlGaN of the epitaxial growth on the GaN buffer layer carries on the back barrier layer；
The GaN channel layer of epitaxial growth on AlGaN back barrier layer；
The AlGaN potential barrier of epitaxial growth on the GaN channel layer；
The first AlGaN modulating layer of epitaxial growth in second AlGaN potential barrier；
The 2nd AlGaN modulating layer of epitaxial growth on the first AlGaN modulating layer；
Concave grid groove is etched in the middle part of the 2nd AlGaN modulating layer, the surface deposition of the concave grid groove has Al2O3Insulating layer, institute
The lumen loading for stating concave grid groove has metal electrode, and the metal electrode is as grid；The table of 2nd AlGaN modulating layer two sides
Face is respectively formed Ohmic contact, respectively as source electrode and drain electrode；
Wherein, the first AlGaN modulating layer, AlGaN potential barrier, GaN channel layer the first double heterojunction of composition, AlGaN potential barrier,
GaN channel layer, AlGaN back barrier layer constitute the second double heterojunction.
2. the enhanced MISHEMT device of slot grid according to claim 1, which is characterized in that first AlGaN potential barrier
In Al content lower than the Al content in the second AlGaN potential barrier；Al content is lower than AlGaN in the first AlGaN modulating layer
Al content in barrier layer, and Al content is higher than the Al content in AlGaN potential barrier in the 2nd AlGaN modulating layer.
3. the enhanced MISHEMT device of slot grid according to claim 1, which is characterized in that the AlGaN carries on the back potential barrier thickness
Degree is 20nm；The first AlGaN modulating layer is with a thickness of 10nm；The 2nd AlGaN modulating layer is with a thickness of 25nm.
4. the enhanced MISHEMT device of slot grid according to claim 1, which is characterized in that the 2nd AlGaN modulating layer
Middle part etching concave grid groove width be 1 μm, concave grid groove depth be 30nm；Al2O3Thickness of insulating layer is 0.1 μm, and the grid is long
Degree is 0.8 μm.
5. the enhanced MISHEMT device of slot grid according to claim 1, which is characterized in that source electrode and drain electrode length is 1
μm。
6. the enhanced MISHEMT device of slot grid according to claim 1, which is characterized in that the GaN of the epitaxial growth is slow
Layer is rushed with N-shaped resistance characteristic or semi-insulating characteristic.
7. the enhanced MISHEMT device of slot grid according to claim 1, which is characterized in that the material of the substrate be silicon,
Any one in silicon carbide, gallium nitride or sapphire.
8. the production method of the enhanced MISHEMT device of the slot grid of -7 any one according to claim 1, which is characterized in that packet
It includes:
(1) semi-insulated substrate is cleaned, and removes surface contaminant；
(2) pass through MOCVD technology, the SiN nucleating layer of epitaxial growth 40nm thickness on semi-insulated substrate；
(3) 3 μm of extension of GaN buffer layer on SiN nucleating layer；
(4) AlGaN of epitaxial growth 20nm thickness carries on the back barrier layer on GaN buffer layer, during film growth, control
It is 7% that AlGaN, which carries on the back Al content in barrier layer,；
(5) the GaN channel layer of epitaxial growth 15nm thickness on barrier layer is carried on the back in AlGaN；
(6) on GaN channel layer successively the AlGaN potential barrier of epitaxial growth 10nm thickness, 10nm thickness the first AlGaN modulating layer with
And the 2nd AlGaN modulating layer of 25nm thickness, the content for controlling Al respectively is 15%, 7%, 25%；
(7) mesa-isolated is carried out using ICP lithographic method on the 2nd AlGaN modulating layer, forms the isolation of active area；
(8) using the method for electron beam evaporation successively in the surface deposition Ti/Al/Ni/Au of the 2nd AlGaN modulating layer two sides
Multiple layer metal, after stripping technology, annealing forms 1 μm of long source electrode and leakage on the two sides of the 2nd AlGaN modulating layer rapidly
Pole；
(9) photoetching making concave grid groove is carried out between drain-source, thick using ICP lithographic technique etching 30nm, 1 μm wide of grid slot；
(10) Al2O3 of 0.1 μ m thick is deposited in the way of ALD deposition as gate medium；
(11) it is deposited in the way of magnetron sputtering and stripping technology is combined to prepare grid metal, formed sediment on Al2O3 gate medium surface
Product grid metal；
(12) last surface passivation is carried out to the enhanced MISHEMT device of slot grid formed through step (1)-(11) and forms electrode
The enhanced MISHEMT device of slot grid that can carry out electrical testing is finally made in pressure welding point.
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Cited By (2)
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| CN111900203A (en) * | 2020-06-30 | 2020-11-06 | 中国电子科技集团公司第五十五研究所 | GaN-based high-hole mobility transistor and preparation method thereof |
| CN112349773A (en) * | 2019-08-07 | 2021-02-09 | 苏州能讯高能半导体有限公司 | Semiconductor device and preparation method thereof |
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