CN107887433A - A kind of enhanced AlGaN/GaN HEMTs and preparation method thereof - Google Patents
A kind of enhanced AlGaN/GaN HEMTs and preparation method thereof Download PDFInfo
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- CN107887433A CN107887433A CN201710861956.4A CN201710861956A CN107887433A CN 107887433 A CN107887433 A CN 107887433A CN 201710861956 A CN201710861956 A CN 201710861956A CN 107887433 A CN107887433 A CN 107887433A
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 80
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000001259 photo etching Methods 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 238000005036 potential barrier Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims abstract description 13
- 229910015844 BCl3 Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 13
- 238000001883 metal evaporation Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 235000020004 porter Nutrition 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The present invention relates to a kind of enhanced AlGaN/GaN HEMTs, its epitaxial structure includes SiC substrate, GaN channel layers, GaN high resistance buffer layers and the AlGaN potential barrier of Al content gradual change.Its preparation method, comprise the technical steps that：（1）The preparation of source and drain metal system；（2）The preparation of grid pin medium groove structure；（3）Grooving；（4）Photoetching grid cover；（5）The formation of Schottky contacts.Advantages of the present invention：1st, BCl is passed through3Gas carries out grooving technique, due to BCl3Different Al content AlGaN reaction rate is had differences, therefore grooving self-stopping technology can be realized.2nd, prepare to form Schottky barrier by grid metal, enhanced AlGaN/GaN device is made.3rd, compatible current depletion type GaN device, preparation technology is simple, and the single-chip integration of enhanced/depletion device can be achieved in same disk.4th, process window is big, and grooving depth and device cut-in voltage controllability are good.
Description
Technical field
The present invention relates to a kind of enhanced AlGaN/GaN HEMTs and preparation method thereof, belong to
Three generations's semiconductor microwave millimetric wave device field.
Background technology
Three generations's semiconductor GaN device, there is the operating voltage of bigger energy gap and Geng Gao, it is in microwave and millimeter wave core
Piece field has broad application prospects.The HEMT device of in general AlGaN/GaN structures, it is inverse due to AlGaN/GaN interfaces
Piezo-electric effect so that two-dimensional electron gas be present in GaN raceway grooves, therefore be normally opened state under the grid voltage of device zero.At GaN HEMT devices
When high voltage operation state, if grid power-off or uncontrolled, device moment can be burnt by the high-power caused heat consumption of high current
Ruin, jeopardize system safety.And enhancement device is then due to being normal OFF state under its zero bias grid voltage, even if grid power-off or uncontrolled,
No current in device, system are not in burn risk.Therefore, consider that enhancement device is in operating voltage from safety in utilization
In high environment, there is certain advantage.Meanwhile enhancement device is also the necessary device of digital multi integrated circuit.Cause
This, exploitation enhancement device is advantageous to promote the development of microwave and millimeter wave device.
At present, enhanced GaN device mainly has two kinds of realization means.A kind of is real using the P-GaN of acceptor ion injection
It is existing.Another kind is to carry out grooving to the AlGaN/GaN devices of routine, reduces barrier layer thickness, pinch-off voltage is toward positive grid voltage side
Realized to movement.Because the process compatible degree of P-GaN injection technology and current GaN HEMT devices is not high, therefore grooving hand
AlGaN/GaN HEMT devices enhanced Duan Shixian are a kind of more conventional selections.But current grooving enhanced AlGaN/GaN
HEMT device grooving depth and surface damage poor controllability, influences device performance and uniformity in grooving AlGaN.Usually,
The BCl used to AlGaN potential barrier grooving3Gas.Because the single material structures of AlGaN cause BCl3When reacting, only
The whole AlGaN reactions of energy terminate, and its depth can only be determined by the reaction time.And because the energy of plasma is by radio frequency work(
The factors such as rate, air pressure influence so that real reaction thickness has fluctuation.In addition, the AlGaN potential barrier of whole is excavated, its ditch
The carrier in road is blocked completely, causes cut-in voltage larger.
In summary, for solution problem above, it is necessary to propose different enhanced AlGaNs/GaN device structure and prepare work
Skill.
The content of the invention
Proposed by the present invention is a kind of enhanced AlGaN/GaN HEMTs and preparation method thereof, its mesh
The AlGaN potential barrier structure and gas ions BCl that are intended to using Al content gradual change3Grooving be present to the AlGaN of different Al contents
The characteristics of speed difference, realizes grooving self-stopping technology, to prepare enhanced AlGaN/GaN HEMTs.
The technical solution of the present invention：A kind of enhanced AlGaN/GaN HEMTs, its epitaxy junction
Structure includes SiC substrate, GaN channel layers, GaN high resistance buffer layers and the AlGaN potential barrier of Al content gradual change；
Its preparation method, comprise the technical steps that：
（1）The preparation of source and drain metal system；
（2）The preparation of grid pin medium groove structure；
（3）Grooving；
（4）Photoetching grid cover；
（5）The formation of Schottky contacts.
Advantages of the present invention：
1st, BCl is passed through3Gas carries out grooving technique, due to BCl3Different Al content AlGaN reaction rate is had differences, compared with
AlGaN and the BCl3 reaction rate of small Al content are fast, and AlGaN and the BCl3 reaction rate of higher Al content are slow, therefore can realize digging
Groove self-stopping technology；
2nd, prepare to form Schottky barrier by grid metal, enhanced AlGaN/GaN device is made；
3rd, compatible current depletion type GaN device, preparation technology is simple, and enhanced/depletion type can be achieved in same disk
The single-chip integration of device；
4th, process window is big, and grooving depth and device cut-in voltage controllability are good.
Brief description of the drawings
Accompanying drawing 1 is GaN epitaxial layer structural representation.
Accompanying drawing 2 prepares source and drain metal and growth protecting medium cross-section schematic diagram.
Accompanying drawing 3 is photoetching grid pin technique schematic cross-section.
Accompanying drawing 4 forms medium groove schematic diagram for etching grid pin.
Accompanying drawing 5 is BCl3Barrier layer schematic diagram is thinned in grooving.
Accompanying drawing 6 is schematic diagram after photoetching grid cover.
Accompanying drawing 7 is that grid metal is evaporated and peels off to form Schottky contacts schematic cross-section.
101 be SiC substrate in accompanying drawing, and 102 be GaN high resistance buffer layers, and 103 be GaN channel layers, and 104 be AlGaN potential barriers
Layer, 105 be AlGaN back of the body barrier layers, and 106 be AlN insert layers, and 107 be GaN cap, and 108 be GaN HEMT-structures, and 201 be source and drain
Metal, 202 be source and drain protection SiN media, and 301 be photoetching process, and 401 be etching technics or wet corrosion technique, and 402 be grid pin
Certain media groove structure, 501 be grooving technique, and 502 be the AlGaN potential barrier after being thinned, and 601 be photoetching grid cover technique, 602
It is grid cover structure glue-type with 603,701 be grid metal evaporation, stripping, Technology for Heating Processing, and 702 be grid metal.
Embodiment
Enhanced AlGaN/GaN HEMTs, its epitaxial structure include SiC substrate, GaN channel layers,
GaN high resistance buffer layers and the AlGaN potential barrier of Al content gradual change；In the AlGaN potential barrier of described Al content gradual change, AlGaN/
Al content highest in the AlGaN of GaN interfaces, by AlGaN/GaN interfaces to AlGaN surfaces, the Al content in AlGaN progressively drops
It is low.
A kind of preparation method of enhanced AlGaN/GaN HEMTs, is comprised the technical steps that：
（1）The preparation of source and drain metal system：Source and drain metal is prepared on the epitaxial structure, and grows source and drain protection medium SiN；
（2）The preparation of grid pin medium groove structure：Grid pin figure is formed using photoetching process in extension body structure surface, then used
A kind of medium of removal grid pin part in etching technics, wet corrosion technique, grid pin part is set to form medium groove structure；If
The circuit of preparation is enhanced and depletion type integrated form monolithic, then the grid pin of depletion type tube core also carries out photoetching and etching technics,
Removed photoresist after etching；
（3）Grooving：Using plasma BCl3Grooving is carried out to AlGaN potential barrier as reacting gas, the grooving time is controlled, makes
Grooving depth retains 1 ~ 2nm AlGaN layer, or grooving makes AlGaN at grid pin all remove completely；If there is increasing simultaneously in circuit
Strong type device and depletion device, then need to increase by a step photoetching, be lithographically formed the secondary grid pin of enhanced tube core, and depletion type
Device is photo-etched glue protection, and secondary grid payment to a porter is wide to should be greater than enhanced tube core；
（4）Photoetching grid cover：Photoetching grid cover is carried out to enhanced tube core, forms grid cover structure glue-type；Surface is carried out after photoetching grid cover
HCL processing；
（5）The formation of Schottky contacts：Grid metal evaporation, stripping and Technology for Heating Processing are carried out, makes grid metal and AlGaN potential barrier
Form Schottky contacts；The grid metal is one kind in Ni, Pt, W；
Technical scheme is further described below in conjunction with the accompanying drawings：
Accompanying drawing 1 is contrasted, GaN epitaxial layer structure includes SiC substrate 101, GaN high resistance buffer layers 102, GaN channel layers 103, AlGaN
Barrier layer 104.Wherein AlGaN potential barrier 104 is gradual structure from bottom to top, and bottom Al content is high, and top Al content is low；Tool
Body Al content can be determined by device application demand, such as 30% fade to 20%；In addition, GaN epitaxial layer is directed to different application environments
Can the characteristic such as breakdown voltage, mobility requirement, optionally insert other layers.Such as in GaN channel layers 103 and GaN high resistants
AlGaN back ofs the body barrier layer 105 is inserted between cushion 102, inserts inside 104 AlN insert layers 106, in AlGaN potential barrier 104
Superficial growth GaN cap 107.Because exemplary epitaxial layer includes SiC substrate 101, GaN high resistance buffer layers 102, GaN channel layers
103, AlGaN potential barrier 104, therefore other insert layers wouldn't discuss, and whether preparing for selective structure does not influence the present invention's
The implementation of enhancement device.
Accompanying drawing 2 is contrasted, source and drain metal 201 is prepared on GaN epitaxy material and grows source and drain protection SiN media 202.
Contrast accompanying drawing 3 and accompanying drawing 4, grid pin figure formed using photoetching process 301 on surface, then using etching technics or
Wet corrosion technique 401 etches or the medium of erosion removal grid pin part, grid pin part is formed medium groove structure 402.If
The circuit of preparation is enhanced and depletion type integrated form monolithic, then the grid pin of depletion type tube core also carries out photoetching and etching technics,
Removed photoresist after etching.
Accompanying drawing 5 is contrasted, using BCl3Grooving is carried out to the AlGaN potential barrier 104 of gradual change for reacting gas；According to enhanced
The cut-in voltage and BCl of tube core3To different Al content AlGaN grooving speed, grooving time machine grooving depth is set.It is if electric
There is enhancement device and depletion device simultaneously in road, then need to increase by a step photoetching, be lithographically formed the secondary of enhanced tube core
Grid pin, and depletion device is photo-etched glue protection, secondary grid payment to a porter is wide to should be greater than enhanced tube core.
Accompanying drawing 6 is contrasted, photoetching grid cover is carried out to print, forms grid cover structure glue-type 602 and 603, this structure is easy to carry out
Stripping technology.After carrying out surface HCL processing, grid metal evaporation is carried out.
Accompanying drawing 7 is contrasted, carries out grid metal evaporation, stripping, Technology for Heating Processing 701, after making the grid metal 702 of device and being thinned
AlGaN potential barrier 502 formed Schottky contacts.If any depletion type tube core, also carry out grid cover photoetching and grid metal evaporation is peeled off
Technique.
Embodiment 1
Enhanced AlGaN/GaN HEMTs are prepared, its structure is：
Epitaxial material structure substantially semi-insulation SiC single crystal substrate layer 600um, GaN high resistance buffer layers 500nm, GaN from top to bottom
Raceway groove 20nm and gradual change AlGaN potential barrier 25nm.The wherein Al contents of barrier layer AlGaN from bottom to top are faded to by 32.5%
20%, wherein, it is 2nm in the high Al content AlGaN close to barrier layer portion, ensures that device all exists in nethermost AlGaN
When, the raceway groove unlatching grid voltage after prepared by device Schottky is positive grid voltage.In addition, the Al content on orlop and its upper strata can be reduced
It is more, to ensure the larger difference of etch rate.The average Al content rate of change of thickness direction is 0.5%nm, i.e. every nanometer of Al
Content reduces by 0.5%.
Its preparation method, including：
1）On the HEMT epitaxial materials of GaN substrate, source and drain metal system is prepared, then grows source and drain protection medium, this layer of medium
Also the AlGaN potential barrier surface of active area is protected；Carry out photoetching isolated area and carry out injection isolation；
2）Photoetching grid pin, is integrated on same wafer if any depletion type tube core, and grid pin can photoetching in the lump.Grid pin size is using typical case
The a length of 0.5um of grid GaN techniques；
3）Grid medium etching technique, AlGaN surfaces are etched to, medium is formed grid pin groove.Work of removing photoresist is carried out after grid pin etching
Skill；
4) for the circuit integrated with enhanced and depletion type, then light requirement quarter secondary grid pin, makes depletion device with photoresist
Protected for mask, and enhancement device then exposes after the secondary grid pin of photoetching；
5) grooving processing is carried out to the grid pin after photoetching, grooving gas is BCl3Gas, setting power 3W, BCl3Flow is
30mms, operating air pressure 30mTorr, empirical tests, 20% Al content AlGaN groovings speed are 8nm/min, 32.5%Al contents
AlGaN groovings speed is 0.5nm/min.Because Al content is to be uprised from top to bottom by low in AlGaN potential barrier, therefore grooving speed
Rate is slower and slower from top to bottom.Therefore it can effectively control grooving depth by controlling the grooving time.After empirical tests, make quarter
Erosion is stopped on one floor height Al content AlGaN of bottom；
6）Photoetching grid cover, grid cover size typically can be controlled in 1.0um or so；Prepared by grid metal, grid metal is prepared typically using electricity
Beamlet vapo(u)rization system, metal system may be selected to be NiPtAu potential barrier systems.After grid evaporation is peeled off, alternative is carried out at annealing
Reason, annealing temperature is at 400 DEG C or so.If any the wafer of depletion device, then photoetching grid cover is carried out in the lump, grid metal is steamed
Hair, annealing process；
7）Grid passivation is carried out using PECVD growth SiN media after grid annealing, needs to prepare resistance, electricity for monolithic integrated circuit
Hold, wiring.
The process step of the invention is compatible with the technology of depletion type GaN HEMT microwave and millimeter wave chip productions.
Claims (7)
1. a kind of enhanced AlGaN/GaN HEMTs, it is characterized in that its epitaxial structure include SiC substrate,
The AlGaN potential barrier of GaN channel layers, GaN high resistance buffer layers and Al content gradual change；The AlGaN potential barriers of described Al content gradual change
In layer, Al content highest in the AlGaN of AlGaN/GaN interfaces, by AlGaN/GaN interfaces to AlGaN surfaces, in AlGaN
Al content gradually reduces.
2. a kind of preparation method of enhanced AlGaN/GaN HEMTs as claimed in claim 1, it is special
Sign is that this method comprises the technical steps that：
（1）The preparation of source and drain metal system；
（2）The preparation of grid pin medium groove structure；
（3）Grooving；
（4）Photoetching grid cover；
（5）The formation of Schottky contacts.
3. a kind of preparation method of enhanced AlGaN/GaN HEMTs as claimed in claim 2, it is special
Sign is the step（1）The preparation of source and drain metal system：Source and drain metal is prepared on the epitaxial structure, and grows source and drain protection
Medium SiN.
4. a kind of preparation method of enhanced AlGaN/GaN HEMTs as claimed in claim 2, it is special
Sign is the step（2）The preparation of grid pin medium groove structure：Grid pin figure is formed using photoetching process in extension body structure surface,
Then using etching technics, a kind of medium of removal grid pin part in wet corrosion technique, grid pin part is made to form medium recessed
Slot structure；If the circuit prepared is enhanced and depletion type integrated form monolithic, the grid pin of depletion type tube core also carry out photoetching and
Etching technics, remove photoresist after etching.
5. a kind of preparation method of enhanced AlGaN/GaN HEMTs as claimed in claim 2, it is special
Sign is the step（3）Grooving：Using plasma BCl3Grooving is carried out to AlGaN potential barrier as reacting gas, control is dug
The groove time, the AlGaN layer for making grooving depth retain 1 ~ 2nm, or grooving makes AlGaN at grid pin all remove completely；If in circuit
There is enhancement device and depletion device simultaneously, then need to increase by a step photoetching, be lithographically formed the secondary grid pin of enhanced tube core,
And depletion device is photo-etched glue protection, secondary grid payment to a porter is wide to should be greater than enhanced tube core.
6. a kind of preparation method of enhanced AlGaN/GaN HEMTs as claimed in claim 2, it is special
Sign is the step（4）Photoetching grid cover：Photoetching grid cover is carried out to enhanced tube core, forms grid cover structure glue-type；After photoetching grid cover
Surface carries out HCL processing.
7. a kind of preparation method of enhanced AlGaN/GaN HEMTs as claimed in claim 2, it is special
Sign is the step（5）The formation of Schottky contacts：Carry out grid metal evaporation, stripping and Technology for Heating Processing, make grid metal with
AlGaN potential barrier forms Schottky contacts；The grid metal is one kind in Ni, Pt, W.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109742144A (en) * | 2019-01-28 | 2019-05-10 | 华南理工大学 | A kind of enhanced MISHEMT device of slot grid and preparation method thereof |
| CN111916351A (en) * | 2019-05-10 | 2020-11-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor device and method for manufacturing the same |
| CN112071902A (en) * | 2020-08-14 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | Spin-polarized coupled GaN high-electron-mobility transistor |
Citations (4)
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| CN112071902A (en) * | 2020-08-14 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | Spin-polarized coupled GaN high-electron-mobility transistor |
| CN112071902B (en) * | 2020-08-14 | 2022-07-29 | 中国电子科技集团公司第五十五研究所 | Spin-polarized coupled GaN high-electron-mobility transistor |
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