CN104637895B - 封装结构及其制造方法 - Google Patents

封装结构及其制造方法 Download PDF

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Publication number
CN104637895B
CN104637895B CN201410125667.4A CN201410125667A CN104637895B CN 104637895 B CN104637895 B CN 104637895B CN 201410125667 A CN201410125667 A CN 201410125667A CN 104637895 B CN104637895 B CN 104637895B
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semiconductor substrate
side wall
redistribution line
line layer
layer
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CN104637895A (zh
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廖宗仁
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Chipmos Technologies Inc
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Chipmos Technologies Inc
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

本发明系关于一种具有侧边散热设计的扇出封装结构，包括：一半导体基板，一焊垫位于所述半导体基板上，以及一重分布线路层连接于所述焊垫并位于所述半导体基板上方且该重分布线路层的一端往所述半导体基板的一侧壁延伸，且所述端与所述侧壁切齐。

Description

封装结构及其制造方法
技术领域
本发明系关于一种半导体封装，且更特定言之，系关于一种具有侧边散热设计的扇出封装结构。
背景技术
因应目前电脑与消费电子产品的可携式及多功能的要求，其外形尺寸需不断缩小，而集成电路晶片的集成电路密度则不断提升。受限于可用空间的限制，因此许多不同的封装方式如：多晶片模组（multi-chip module；MCM）、覆晶封装（flip chip package）、三维垂直堆迭封装(3D stack package)、晶圆级晶片尺寸封装（wafer level chip scalepackage；WLCSP）等技术应运而生。晶圆级封装技术的概念基本上是在整片晶圆上执行晶片尺寸的封装技术，也就是在晶圆阶段就完成了于集成电路晶片上直接形成锡球等大部分的封装工作，不但省略了传统封装技术中承载晶片的基板或导线架，也简化了封装制程。因此，晶圆级晶片尺寸封装可以缩小封装体尺寸，并且在制程及材料成本上也相当具有优势。
目前WLCSP晶圆级封装完成后,需要在后段研磨后再进行切割。如图1所示，最后封装后的成品背面需涂上散热膏7再装上散热片5帮助晶片导热,然而此方式的成本过高。且涂上散热膏7及放置散热片5之前，需要另一研磨制程使得晶圆背面光滑，此制程增加额外成本。
传统散热膏7及散热片5结构中，热能朝着垂直晶片（图1箭头）的方向逸散，一部份热能往散热片5方向逸散，一部份热能透过焊球往基板方向逸散。然而随着晶片产热量增加，以及晶片面积缩小，其散热方式已不符合时宜。
发明内容
本发明的一个实施例描述一种具有侧边散热设计的扇出封装结构，包括：一半导体基板，一焊垫位于所述半导体基板上，以及一重分布线路层连接于所述焊垫并位于所述半导体基板上方且该重分布线路层的一端往所述半导体基板的一侧壁延伸，且所述端与所述侧壁切齐。
在一个实施例中，所述侧壁为一粗糙化表面。
在一个实施例中，所述半导体基板的背面为一粗糙化表面。
在一个实施例中，所述重分布线路层位于所述半导体基板外围。
本发明的一个实施例描述一种具散热图案的封装结构包含：一半导体基板，一焊垫位于所述半导体基板上，以及一散热图案位于所述半导体基板上方，其中所述散热图案系由一重分布线路层连接于所述焊垫并位于所述半导体基板的外围并且切齐所述半导体基板的一侧壁所组成。
在一个实施例中，所述散热图案为一围绕半导体基板外围的环状结构。
本发明的一个实施例描述一种具有侧边散热设计的扇出封装结构的制造方法，其步骤包含：提供一半导体基板具有一焊垫位于所述半导体基板的一正面的上方；形成一第一介电层位于所述半导体基板的所述正面上方；以及形成一重分布线路层连接于所述焊垫并覆盖所述第一介电层及所述半导体基板的外围，使所述重分布线路层与所述半导体基板的一侧壁切齐。
在一个实施例中，进一步包含附着一保护层于所述半导体基板的所述正面及所述重分布线路层上仅露出所述半导体基板的一背面及所述侧壁。
在一个实施例中，进一步包含沉浸所述半导体基板的所述背面及所述侧壁于蚀刻液中，并且湿式微蚀刻所述半导体基板的所述侧壁及所述背面。
在一个实施例中，进一步包含形成一保护层在所述半导体基板的所述背面。
在一个实施例中，进一步包含沉浸所述半导体基板于蚀刻液中，并且湿式微蚀刻所述半导体基板的所述侧壁。
在一个实施例中，进一步包含无电极电镀所述半导体基板的所述侧壁及/或所述背面。
前文已颇为广泛地概述本发明的特征及技术优势以便可更好地理解随后的本发明的详细描述。本发明的额外特征及优势将在下文中加以描述，且形成本发明的权利要求的主题。本领域技术人员应了解，所揭示的概念及特定实施例可易于用作修改或设计其他结构或程序以用于进行本发明的同样目的的基础。本领域技术人员亦应认识到，此等等效构造并不脱离如随附权利要求书中所阐明的本发明的精神及范畴。
附图说明
图1显示为现有技术；
图2为本公开一实施例的一具有侧边散热设计的扇出封装结构的示意性剖视图；
图3为本公开一实施例的一具有侧边散热设计的扇出封装结构的示意性剖视图；
图4为本公开一实施例的一具有侧边散热设计的扇出封装结构的示意性剖视图；
图5为本公开一实施例的一具有侧边散热设计的扇出封装结构的示意性剖视图；
图6为本公开一实施例的一具有散热图案的封装结构的上视图；以及
图7-8为本公开一实施例的形成粗糙侧壁的示意图。
上文已经概略地叙述本公开的技术特征及优点，俾使下文的本公开详细描述得以获得较佳了解。构成本公开的权利要求标的的其它技术特征及优点将描述于下文。本公开所属技术领域中具有通常知识者应可了解，下文揭示的概念与特定实施例可作为基础而相当轻易地予以修改或设计其它结构或制程而实现与本公开相同的目的。本公开所属技术领域中具有通常知识者亦应可了解，这类等效的建构并无法脱离后附的权利要求书所提出的本公开的精神和范围。
具体实施方式
以下所述的详细内容主要是用来举例说明本发明中所提的例示装置或方法，所述内容不应用来限定本发明，而且对于任何与本发明概念均等的功能与元件皆不脱离本发明的精神。以下描述请参考附图，以便于说明本发明的目的及优点。
图2显示为本公开一实施例的一具有侧边散热设计的扇出封装结构10的示意性剖视图。封装结构10包括：一半导体基板21、一焊垫22、一钝化层23、一图案化层24、一第一介电层31、一重分布线路层(RDL,Redistribution Layer)41、一第二介电层51、以及一焊球61。半导体基板21包含一侧壁26及一背面28，侧壁26及背面28包含粗糙化的表面。第一介电层31包含一延伸介电层32。钝化层23的侧边及图案化层24的侧边组成一端面25。
根据某些实施例，如图2所示，焊垫22位于半导体基板21上方。钝化层23位于焊垫22的上方，钝化层23具有一开口用以暴露一部份焊垫22。图案化层24位于钝化层23的上方，图案化层24亦具有一开口相容于暴露的一部份焊垫22。第一介电层31位于图案化层24上方，第一介电层31覆盖图案化层24及端面25并往侧壁26延伸而形成延伸介电层32。延伸介电层32位于半导体基板21上方。此外，延伸介电层32与侧壁26切齐。重分布线路层41连接焊垫22并位于半导体基板21上方，重分布线路层41的一端往半导体基板21的侧壁26延伸，且所述端与侧壁26切齐。
在本实施例中，第二介电层51覆盖于重分布线路层41上方，第二介电层51向侧壁26延伸，并且与侧壁26切齐。第二介电层51包含一开口55。开口55暴露一部份重分布线路层41。开口55可用来作为焊球61生成的位置。在某些实施例中，一凸块下金属层（UBM，未显示）形成于开口55内。再将焊球61形成于凸块下金属层上方，使得焊球61与重分布线路层41电性连接。
重分布线路层41除了作为封装结构10内部的电连结结构，亦可提供一热能逸散的途径。焊球61与焊垫22为主要产热区域，电连接的过程中会产生热能，重分布线路层41如同一热传导路线，不仅传导电性，亦传导热能。此外，重分布线路层41由金属所构成，金属相对于介电质具有更高的导热系数，使得电传导过程中所产生的热能，透过重分布线路层41的路径，将热能引导到侧边，侧边与外界产生对流或传导，加速热能的逸散。
在某些实施例中，侧壁26为一粗糙化表面。半导体基板21承受内部电路产生的热能，粗糙化表面能增加散热的表面积，使得增加侧壁26与外界的对流，用以降低温度，带走热能。避免半导体基板21过热而导致电性偏离或杂讯过大。此外，粗糙化的侧壁26提供侧边的散热机制，将半导体基板21的热能往侧壁26发散，作为热源的出口。在某些实施例中，粗糙化表面上能电镀金属，金属具有较佳的导热系数，增加侧壁26与外界的对流。
此外，在某些实施例中，侧壁26及背面28皆为粗糙表面可进一步增加散热面积,与重分布线路层41配合之下，使得散热效果得以提升。相对于先前技术需要研磨背面并贴上散热片，背面28不需要额外研磨或物件以降低成本与制程复杂度。背面28仅实施粗糙化处理，即可作为半导体基板21热源的出口。此外，背面28占大部分表面积，提供大面积的散热区域。背面28提供半导体基板21一纵向的散热机制，取代散热片的功能。在某些实施例中，背面28的粗糙化表面上能电镀金属，金属具有较佳的导热系数，增加背面28与外界的对流。
图2中的封装结构10的制造方法，说明如下。先提供半导体基板21，半导体基板21为硅基板、切割后的晶粒或印刷电路板。之后，焊垫22形成于半导体基板21的一正面27。焊垫22的形成方式例如是利用化学气相沉积(CVD)、电浆化学气相沉积(PECVD)或物理气相沉积(PVD)如溅镀或蒸镀形成在基板21上表面。焊垫22的材料为金属，例如银、铜等常使用于封装的导电金属。
钝化层23形成于半导体基板21上方。接着图案化该钝化层23以暴露出一部分焊垫22。钝化层23材料为钝化材料，例如氧化物层、氮化物层。钝化层23能利用溅镀、蒸镀或涂布的方式形成。进一步形成图案化光阻或遮罩层于钝化层23上方，并进行蚀刻用以暴露一部分焊垫22，随后将光阻或遮罩层去除。
之后，沉积一图案化层24以覆盖该钝化层23，其中，图案化层24包含位于焊垫22上方的一预定尺寸开孔。图案化层24的材料为聚合物介电层，但不限于此。图案化层24可利用涂布方式形成，利用涂布机以旋转涂布将液态聚合物均匀涂布在晶圆上，再经由利用光罩将聚合物介电层预定开孔的位置遮住而进行曝光，再经显影移除未曝光的区域，使用烤箱加热将聚合物加速固化至完全熟化的稳定状态。钝化层23与图案化层24的末端切齐而形成端面25。
随后，将第一介电层31形成于半导体基板21的正面27上方。第一介电层31可为(但不限制于)氧化物层、氮化物层或聚合层。第一介电层31的形成方式可依需求调整，如CVD、PVD制程，或旋转涂布(spin coating)的方式。第一介电层31覆盖图案化层24与半导体基板21。第一介电层31具有一延伸介电层32部分。延伸介电层32覆盖端面25并且与侧壁26切齐。第一介电层31顺应高低差别而具有一近似梯形分布。
随后，形成重分布线路层41连接于焊垫22并覆盖第一介电层31及半导体基板21的外围。并且重分布线路层41与半导体基板21的侧壁26切齐。重分布线路层41的一主要功能是提供电流流通路径。重分布线路层41的材质可为铜、银、钯、金或其合金。重分布线路层41可利用CVD、PVD方式形成。
形成第二介电层51于重分布线路层41上方。随后利用光阻或光罩定义开口55，并藉由干、湿式蚀刻、或光学蚀刻方式暴露出一部分重分布线路层41。在某些实施例中，球下金属层(UBM,Under Bump Metallization)形成于开口55内，UBM层包括至少两层金属层，即粘接层及晶种层。该粘接层与重分布线路层41直接接触且通常由钛或钨化钛(TiW)制成，以便提供重分布线路层41与焊球61之间的机械上较佳的连接及较好的粘着性。该晶种层定位于该粘接层上且由金、铜、镍或合金组成。UBM层由金属溅镀程序、气相沉积程序或金属膏印刷程序形成。
之后，形成焊球61于UBM层上或直接形成于重分布线路层41上。本实施例中焊球61可为锡球，而此步骤可为一植球步骤，植球方式例如但不限于网版印刷、蒸镀、电镀、落球、喷球等。
根据另一实施例，图3显示为本公开一实施例的一具有侧边散热设计的扇出封装结构11的示意性剖视图。封装结构11的结构及制造方法相似于封装结构10。封装结构10与封装结构11的差别在于一图案化重分布线路层42，重分布线路层42具有一开口56。开口55对准开口56。两开口提供焊球61拥有更深层的容置空间，能稳定焊球61。同时重分布线路层42仍具有侧边散热效果。搭配具有粗糙表面的侧壁26和背面28，使得具有更佳的侧边及背面散热效率。
根据另一实施例，图4为本公开一实施例的一具有侧边散热设计的扇出封装结构14的示意性剖视图。封装结构14的结构及制造方法相似于封装结构10。封装结构14与封装结构10的差别在于一重分布线路层43包含一开口57。开口57远离开口55，并且填充一第二介电层52，使得开口57作为阻断半导体基板21与外界的电性连接。此外，第一介电层31包含一延伸介电层33。延伸介电层33覆盖端面25与部分半导体基板21，其中，仅覆盖半导体基板21外围一部分，并未与侧壁26切齐。如此，使得重分布线路层43的一端能接触半导体基板21外围。重分布线路层43与半导体基板21的更多接触能带走更多基板热能。同时，重分布线路层43与具有粗糙表面的侧壁26和背面28提供侧边、背面的散热效果。
根据另一实施例，图5为本公开一实施例的一具有侧边散热设计的扇出封装结构15的示意性剖视图。封装结构15的结构及制造方法相似于封装结构10。封装结构15与封装结构10的差别在于重分布线路层43包含开口57。开口57远离开口55，并且填充一第二介电层53，使得开口57作为阻断半导体基板21与外界的电性连接。此外，第二介电层53覆盖部分重分布线路层43，并未与侧壁26切齐。如此，末端的重分布线路层43直接暴露在环境中，增加与外界的对流，加速散热。同时，具有粗糙表面的侧壁26和背面28提供侧边、背面的散热效果。
图6为本公开一实施例的一具有散热图案的封装结构16、17的上视图。如左图所示，重分布线路层位于半导体基板外围而形成一散热图案45。散热图案45位于半导体基板或晶粒上方，其中散热图案45系由一重分布线路层由内部连接焊垫，散热图案45位于半导体基板的外围并且切齐半导体基板的侧壁26。本实施例中，散热图案45为一连续环状结构分布于半导体基板外围。封装结构16包含焊球61，其相对位置如图6的左图所示。某些实施例中，散热图案45由内部连接焊球61，某些实施例中，两者并未电性连接。其散热图案45提供侧边散热途径。同时，具有粗糙化表面的侧壁26亦具有侧边散热效果。
图6的右图为一具有散热图案的封装结构17的上视图。重分布线路层位于半导体基板外围而形成一散热图案46。散热图案46连接焊球61，散热图案46能导引焊球61所产生的热能。散热图案46为非连续，其散热图案46的配置能决定热能逸散的路径。散热图案46分布于半导体基板外围并且切齐半导体基板的侧壁26。同时，粗糙化的侧壁26亦具有侧边散热效果。故藉由散热图案46与外界接触，将焊球61在电性操作时产生的热能逸散到封装结构17的四周。由于散热图案46为金属，且金属具有较高导热系数，容易传导热能，使得中心的热能藉由散热图案46传递，并作为热源出口。同时，粗糙化的侧壁26亦提供中心的热能往侧边逸散，增加散热效率。在某些实施例中，在粗糙化的侧壁26上电镀金属，能提升散热效能。
图7-8为本公开一实施例的形成粗糙化侧壁26的示意图。根据某些实施例中，如图7所示，在焊球61完成后，附着一保护层71于半导体基板21的正面27及第二介电层51上，仅露出半导体基板21的背面28及侧壁26。保护层71为例如一干膜(dry film)、光阻、或胶带。随后，沉浸半导体基板21的背面28及侧壁26于蚀刻液中，并且湿式微蚀刻半导体基板21的侧壁26及背面28。使得背面28及侧壁26形成粗糙化表面，能作为散热途径。在某些实施例中，进一步无电极电镀半导体基板21的侧壁26及/或背面28，使得电镀金属附着于侧壁26及/或背面28，以增加散热效果。
粗糙化的背面28能作为散热途径。与先前技术不同，本公开不需要进一步研磨、涂上散热膏或粘上散热片，使得大幅减少成本。
根据某些实施例中，如图8所示，在焊球61完成后，附着一保护层71于半导体基板21的正面27及第二介电层51上，仅露出所述半导体基板21的背面28及侧壁26。此外，形成一保护层72在半导体基板21的背面28，仅露出侧壁26。随后，进一步沉浸半导体基板21于蚀刻液中，并且湿式微蚀刻半导体基板21的侧壁26。因此，侧壁26具有粗糙化表面，能作为散热途径。在某些实施例中，无电极电镀半导体基板21的侧壁26，以增加散热效果。
虽然已详细地描述了本发明及其优势，但应理解，在不脱离如由随附权利要求书界定的本发明的精神及范畴的情况下，本文中可进行各种改变、替代及更改。举例而言，上文所论述的程序中的多者可以不同方法来实施且可由其他程序或其组合替代。
此外，本申请案的范畴不应局限于说明书中所描述的程序、机器、制造、物质组成、手段、方法及步骤的特定实施例。如本领域普通技术人员将易于自本发明的揭示内容了解，根据本发明，可利用当前存在或日后将开发出的执行与本文中所描述的相应实施例大体上相同的功能或达成与本文中所描述的相应实施例大体上相同的结果的程序、机器、制造、物质组成、手段、方法或步骤。因此，随附权利要求书意欲在其范畴中包括此等程序、机器、制造、物质组成、手段、方法或步骤。
附图标记说明
5 散热片
7 散热膏
10 封装结构
11 封装结构
14 封装结构
15 封装结构
16 封装结构
21 半导体基板
22 焊垫
23 钝化层
24 图案化层
25 端面
26 侧壁
27 正面
28 背面
31 第一介电层
32 延伸介电层
33 延伸介电层
41 重分布线路层
42 重分布线路层
43 重分布线路层
45 散热图案
46 散热图案
51 第二介电层
52 第二介电层
53 第二介电层
55 开口
56 开口
57 开口
61 焊球
71 保护层
72 保护层

Claims (12)

1.一种具有侧边散热设计的扇出封装结构，包括：
一半导体基板；
一焊垫位于所述半导体基板上；以及
一重分布线路层位于所述焊垫上方，且该重分布线路层包含第一部分、第二部分以及阻断所述第一部分及所述第二部分之间电性连接的开口，
其中所述第一部分与所述焊垫电性连接，所述第二部分作为虚设重分布部分向所述半导体基板的一侧壁延伸，且所述第二部分与所述侧壁切齐。
2.根据权利要求1的结构，其中所述侧壁为一粗糙化表面。
3.根据权利要求1的结构，其中所述半导体基板的背面为一粗糙化表面。
4.根据权利要求1的结构，其中所述重分布线路层位于所述半导体基板外围。
5.一种具散热图案的封装结构包含：
一半导体基板；
一焊垫位于所述半导体基板上；
一散热图案位于所述半导体基板上方；以及
一介电层与所述散热图案连接，其中所述散热图案由连接于所述焊垫并位于所述半导体基板的外围的一重分布线路层所组成，其中所述重分布线路层包含一上表面，所述上表面靠近所述重分布线路层一侧壁的部分暴露于外界空气中，并且所述重分布线路层的所述侧壁切齐所述半导体基板的一侧壁。
6.根据权利要求5的结构，其中所述散热图案为一围绕半导体基板外围的环状结构。
7.一种具有侧边散热设计的扇出封装结构的制造方法，其步骤包含：
提供一半导体基板具有一焊垫位于所述半导体基板的一正面的上方；
形成一第一介电层位于所述半导体基板的所述正面上方；以及
形成一重分布线路层连接于所述焊垫并覆盖所述第一介电层及所述半导体基板的外围，使所述重分布线路层与所述半导体基板的一侧壁切齐，其中所述重分布线路层包含一上表面，所述上表面靠近所述重分布线路层一侧壁的部分暴露于外界空气中。
8.根据权利要求7的方法，进一步包含附着一保护层于所述半导体基板的所述正面及所述重分布线路层上仅露出所述半导体基板的一背面及所述侧壁。
9.根据权利要求8的方法，进一步包含沉浸所述半导体基板的所述背面及所述侧壁于蚀刻液中，并且湿式微蚀刻所述半导体基板的所述侧壁及所述背面。
10.根据权利要求8的方法，进一步包含形成一保护层在所述半导体基板的所述背面。
11.根据权利要求10的方法，进一步包含沉浸所述半导体基板于蚀刻液中，并且湿式微蚀刻所述半导体基板的所述侧壁。
12.根据权利要求9或11的方法，进一步包含无电极电镀所述半导体基板的所述侧壁及/或所述背面。
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