CN101510539A - 元件搭载用基板、半导体组件及其制造方法及便携式设备 - Google Patents
元件搭载用基板、半导体组件及其制造方法及便携式设备 Download PDFInfo
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- CN101510539A CN101510539A CNA2009101307726A CN200910130772A CN101510539A CN 101510539 A CN101510539 A CN 101510539A CN A2009101307726 A CNA2009101307726 A CN A2009101307726A CN 200910130772 A CN200910130772 A CN 200910130772A CN 101510539 A CN101510539 A CN 101510539A
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Abstract
本发明涉及元件安装用基板及其制造方法、半导体组件及其制造方法以及便携式设备。该元件搭载用基板包括:绝缘树脂层、设置在绝缘树脂层的一主表面的配线层、以及与配线层电连接且从配线层向绝缘树脂层侧突出的突起电极。在突起电极的侧面形成有凹凸,与突起电极的顶部面相比,其侧面的表面粗糙度大。
Description
技术领域
本发明涉及一种元件搭载用基板及其制造方法、半导体组件及其制造方法以及便携式设备。
背景技术
近年来,伴随着电子设备的小型化、高性能化,要求电子设备中使用的半导体元件进一步小型化。伴随着半导体元件的小型化,用于安装到配线基板上的电极间的窄间距化是不可缺少的。作为半导体元件的表面安装方法,已知有如下方法:在半导体元件的电极上形成焊料突块,然后将焊料突块和配线基板的电极焊盘进行软钎焊的倒装芯片安装方法。倒装芯片安装方法中,焊料突块自身的大小、软钎焊时的桥接产生(ブリツジ発生)等成为制约,限制了电极的窄间距化。作为用于克服这种限制的结构,已知有如下结构:以形成在基材上的突起结构作为电极或通路,经由环氧树脂等绝缘树脂将半导体元件安装在基材上,并将半导体元件的电极与突起结构连接。
但是,由于构成突起结构的材料通常采用具有导电性的铜等金属,所以在突起结构和绝缘树脂层中热膨胀系数不同。因此,因热处理或使用环境的温度变化而在突起结构和绝缘树脂层的界面处产生热应力,恐怕会导致突起结构和绝缘树脂层之间的密接性降低。由此,恐怕会导致突起结构和半导体元件的电极之间的连接可靠性降低。
发明内容
本发明的优点之一在于,在将突起结构和半导体元件的电极连接的结构中,能提高突起结构和半导体元件的电极之间的连接可靠性。
本发明提供一种元件搭载用基板。该元件搭载用基板包括:绝缘树脂层、设置在绝缘树脂层的一主表面的配线层、以及与配线层电连接且从配线层向绝缘树脂层侧突出的突起电极,在突起电极的侧面形成有凹凸,与突起电极的顶表面相比,侧面的表面粗糙度大。
根据该实施方式,在上述元件搭载用基板层叠有半导体元件的情况下,突起电极和半导体元件的元件电极之间的连接可靠性提高。
在上述方式中,凹凸为如下凹凸,即相对于侧面上的任意两点间的直线距离,该两点间的沿凹凸表面的路程的比例为大于大约1.22。
在上述方式中,侧面的表面粗糙度Rmax也可为大约1.0μm~大约2.0μm。
在上述方式中,突起电极也可由轧制金属构成。
本发明的另一方式提供一种半导体组件。该半导体组件包括:上述的任一方式的元件搭载用基板和设置有与突起电极对置的元件电极的半导体元件,突起电极贯通绝缘树脂层,突起电极和上述元件电极电连接。
本发明的再一方式提供一种便携式设备。该便携式设备搭载有上述任一方式的半导体组件。
本发明的再一方式提供一种元件搭载用基板的制造方法。该元件搭载用基板的制造方法包括:准备突出设置有突起电极且由轧制金属构成的金属板的工序;在突起电极的侧面形成凹凸的粗化工序;在形成有突起电极一侧的金属板的主表面层叠绝缘树脂层的工序;以及选择地去除金属板而形成配线层的工序。
本发明的再一方式提供一种元件搭载用基板的制造方法。该元件搭载用基板的制造方法包括:在金属板的一主表面的规定区域形成金属层的工序;以金属层为掩模,选择地去除形成有金属层一侧的金属板的主表面而形成突起电极的工序;在突起电极的侧面形成凹凸的粗化工序;在形成有突起电极一侧的金属板的主表面层叠绝缘树脂层的工序;以及选择地去除金属板而形成配线层的工序。
本发明的再一方式提供一种元件搭载用基板的制造方法。该元件搭载用基板的制造方法包括:准备突出设置有突起电极且由轧制金属构成的金属板的工序;在突起电极的侧面形成凹凸的粗化工序;隔着绝缘树脂层压接金属板和设置有与突起电极对应的元件电极的半导体元件,通过使突起电极贯通绝缘树脂层,从而电连接突起电极和元件电极的压接工序;以及选择地去除金属板而形成配线层的工序。
本发明的再一方式提供一种元件搭载用基板的制造方法。该元件搭载用基板的制造方法包括:在金属板的一主表面的规定区域形成金属层的工序;以金属层为掩模,选择地去除形成有金属层一侧的金属板的主表面而形成突起电极的工序;在突起电极的侧面形成凹凸的粗化工序;隔着绝缘树脂层压接金属板和设置有与突起电极对应的元件电极的半导体元件,通过使突起电极贯通绝缘树脂层,从而电连接突起电极和元件电极的压接工序;以及选择地去除金属板而形成配线层的工序。
在上述方式中,绝缘树脂层也可以通过加压而产生塑性流动。
附图说明
图1是表示实施方式1的元件搭载用基板及半导体组件的结构的概略剖面图;
图2(A)~(G)是表示突起电极的形成方法的工序剖面图;
图3(A)~(F)是表示配线层的形成方法、突起电极和元件电极的连接方法的工序剖面图;
图4(A)~(E)是表示实施方式2的突起电极的形成方法的工序剖面图;
图5是表示实施方式3的手机的结构图;
图6是手机的局部剖面图。
具体实施方式
现在,将参照优选实施方式来描述本发明。这并不限制本发明的范围,而只是例示本发明。
下面,以最佳实施方式为基础并参照附图来说明本发明。对各图中示出的相同或同等的构成要素、部件、处理,标注相同的附图标记,适当省略重复的说明。此外,实施方式不限定发明,只是一种例示,实施方式中描述的全部特征或其组合不必限于是本发明的本质。
(实施方式1)
图1是表示实施方式1的元件搭载用基板10及使用它的半导体组件30的结构的概略剖面图。半导体组件30包括元件搭载用基板10及搭载于该元件搭载用基板10的半导体元件50。
元件搭载用基板10包括:绝缘树脂层12、设置在绝缘树脂层12的一主表面的配线层14、以及与配线层14电连接且从配线层14向绝缘树脂层12侧突出的突起电极16。
绝缘树脂层12由绝缘性树脂构成,例如由加压时引起塑性流动的材料形成。作为加压时引起塑性流动的材料,可以举出环氧类热固性树脂。绝缘树脂层12所使用的环氧类热固性树脂只要是例如在温度160℃、压力8Mpa的条件下具有粘度为1kPa·s的特性的材料即可。另外,这种环氧类热固性树脂例如在温度160℃的条件下,在以压力5~15Mpa被加压的情况下,与未加压的情况相比,树脂的粘度降低到约1/8。与此相对,热固化前的B阶段的环氧树脂在玻璃转移温度Tg以下的条件下,与未对树脂加压的情况相同程度地,没有粘性,即使加压也不会产生粘性。另外,该环氧类热固性树脂是具有约为3~4的介电常数的电介质。
配线层14设于绝缘树脂层12的一主表面,由导电材料、优选轧制金属、更优选轧制铜构成。在配线层14,在绝缘树脂层12侧,突出设置有突起电极16。在本实施例中,配线层14与突起电极16一体地形成,但是不特别限定于此。在配线层14的与绝缘树脂层12相反的一侧的主表面,设置有用于防止配线层14的氧化等的保护层18。作为保护层18可列举抗焊剂层等。在保护层18的规定区域形成有开口部18a,利用开口部18a露出配线层14的一部分。在形成有开口部18a的位置处,形成作为外部连接电极的焊料突块20,焊料突块20和配线层14电连接。形成焊料突块20的位置、即开口部18a的形成区域例如是将再配线围上的前端的端部。
突起电极16在俯视看时例如为圆形,其具有以随着接近顶部而直径变细的方式形成的侧面。另外,突起电极16的形状并不特别限定,例如,也可以是具有规定直径的圆柱状。另外,也可以是在俯视看时为四边形等多边形。此外,突起电极16在其侧面形成有凹凸,与突起电极16的顶部面相比,侧面的表面粗糙度变大。在此,优选侧面的凹凸为如下凹凸,即相对于侧面上的任意两点间的直线距离,该两点间的沿凹凸表面的路程的比例为大于大约1.22。在此,在侧面的凹凸是如下凹凸的情况下,即相对于侧面上的任意两点间的直线距离,该两点间的沿凹凸表面的路程的比例为大约1.22以下程度的情况下,虽然即使在这样的范围内也能使用,但难以取得能够提高突起电极16和绝缘树脂层12之间的密接性这样所希望的锚定效果。因此,凹凸优选为,两点间的路程相对于两点间的距离的比例比大约1.22大。
此外,突起电极16侧面的表面粗糙度Rmax为大约1.0μm~大约2.0μm。在此,在侧面的表面粗糙度Rmax比大约1.0μm小的情况下,虽然在这样的范围内也能使用,但难以取得可提高突起电极16和绝缘树脂层12之间的密接性这样的所希望的锚定效果;在侧面的表面粗糙度Rmax比大约2.0μm大的情况下,虽然在这样的范围内也能使用,但恐怕会导致绝缘树脂层12不进入凹部内而在突起电极16和绝缘树脂层12之间产生空间。而且,由于此空间的扩展,当产生热应力时,导致突起电极16和绝缘树脂层12容易从该处剥离。因此,优选凹凸在上述范围内。此外,能够通过实验求出得到所希望的锚定效果的凹凸程度。
在突起电极16的表面,覆盖有例如利用电解电镀法或无电解电镀法形成的、镍(Ni)/金(Au)镀层等金属层17。也可以不设置金属层17。
在具备上述结构的元件搭载用基板10搭载半导体元件50而形成半导体组件30。本实施方式的半导体组件30是隔着绝缘树脂层12电连接元件搭载用基板10的突起电极16和半导体元件50的元件电极52的结构。
半导体元件50具有分别与各突起电极16对置的元件电极52。此外,在与绝缘树脂层12相接的一侧的半导体元件50的主表面,层叠有元件保护层54,该元件保护层54设置有开口,以使元件电极52露出。在元件电极52的表面,覆盖有Ni/Au镀层等金属层56。也可以不设置金属层56。作为半导体元件50的具体例,可列举集成电路(IC)、大规模集成电路(LSI)等半导体芯片。作为元件保护层54的具体例,可列举聚酰亚胺层。此外,元件电极52例如可使用铝(Al)。
在本实施方式中,在元件搭载用基板10和半导体元件50之间设置有绝缘树脂层12,元件搭载用基板10压接在绝缘树脂层12的一主表面,半导体元件50压接在另一主表面。然后,使突起电极16贯通绝缘树脂层12,并与设置于半导体元件50的元件电极52电连接。由于绝缘树脂层12由通过加压而产生塑性流动的材料构成,所以在元件搭载用基板10、绝缘树脂层12以及半导体元件50以该顺序形成一体的状态下,可抑制在突起电极16和元件电极52之间夹有绝缘树脂层12的残膜,可谋求提高连接可靠性。此外,在突起电极16及元件电极52的表面,分别覆盖有金属层17及金属层56。由此,因突起电极16和元件电极52使在彼此的最表面配置的金之间接合(金-金接合),因此,进一步提高突起电极16和元件电极52的连接可靠性。
(元件搭载用基板及半导体组件的制造方法)
图2(A)~(G)是表示本实施方式的突起电极16的形成方法的工序剖面图。
如图2(A)所示,准备厚度至少比突起电极16的高度和配线层14的厚度之和大且作为金属板的铜板13。在此,铜板13由轧制铜构成。
接着,如图2(B)所示,通过平版印刷术,在铜板13的一主表面,与突起电极16的图案吻合而选择地形成抗蚀剂70。具体地说,使用层压装置在铜板13上贴附规定膜厚的抗蚀剂膜,使用具有突起电极16的图案的光掩模曝光后,通过显影,在铜板13上选择地形成抗蚀剂70。为提高与抗蚀剂的密接性,在层压抗蚀剂膜之前,希望根据需要在铜板13的表面进行研磨、清洗等前处理。
接着,如图2(C)所示,以抗蚀剂70为掩模,在铜板13形成规定图案的突起电极16。具体地说,通过以抗蚀剂70为掩模蚀刻铜板13,形成具有规定图案的突起电极16。
接着,如图2(D)所示,使用剥离剂剥离抗蚀剂70后,为了在侧面形成凹凸,对突起电极16的表面实施粗化处理,以使突起电极16侧面的表面粗糙度相比顶部面的表面粗糙度变大。作为粗化处理,例如可列举CZ处理(注册商标)等药液处理、等离子体处理等。在CZ处理中,例如通过将铜板13浸渍在由甲酸和盐酸的混合液等构成的药液中,蚀刻突起电极16的表面,从而对突起电极16的表面进行粗化处理。在本实施方式中,由于铜板13由轧制铜构成,所以形成突起电极16的铜的晶粒以其长轴与突起电极16的顶部面平行而短轴与突起电极16的顶部面大致垂直的方式排列。因此,通过突起电极16表面的粗化处理,在突起电极16的侧面形成与铜的晶粒对应的凹凸,并且能够保持顶部面大致平坦。此外,在等离子体处理的情况下,例如,在600W的高频输出、压力为1.5Pa的条件下,将铜板以规定时间暴露在由40sccm的氧、60sccm的氯组成的等离子体气体氛围中,蚀刻突起电极16的表面,从而对突起电极16的表面进行粗化处理。另外,在等离子体处理的情况下,覆盖突起电极16的顶部面以使顶部面不被粗化处理。
接着,如图2(E)所示,利用平版印刷术,选择地形成抗蚀剂71以使突起电极16的顶部面露出。
接着,如图2(F)所示,在突起电极16的顶部面,例如利用电解电镀法或无电解电镀法,形成镍(Ni)/金(Au)镀层等金属层17。如前所述,由于即使对突起电极16表面进行粗化处理,突起电极16的顶部面也能够保持大致平坦,所以能在顶部面上形成大致平坦且厚度均匀的金属层17。
接着,如图2(G)所示,剥离并去除抗蚀剂71。通过以上说明的工序,在铜板13形成突起电极16。突起电极16的基底部的直径、顶部的直径、高度例如分别为φ50~150μm、φ45~100μm、20μm。金属层17的Ni层及Au层的厚度例如分别为3.0μm、0.5μm。
图3(A)~3(F)是表示配线层14的形成方法、突起电极16和元件电极52的连接方法的工序剖面图。
如图3(A)所示,使突起电极16面向绝缘树脂层12侧,将铜板13配置在绝缘树脂层12的一主表面侧。此外,将设置有与突起电极16对置的元件电极52的半导体元件50配置在绝缘树脂层12的另一主表面。在元件电极52覆盖有例如Ni/Au镀层等金属层56。绝缘树脂层12的厚度大致为突起电极16的高度,约为20μm。然后,使用加压装置,隔着绝缘树脂层12压接铜板13和半导体元件50。加压加工时的压力及温度分别约为5Mpa及180℃。
通过加压加工,使绝缘树脂层12产生塑性流动,突起电极16贯通绝缘树脂层12。然后,如图3(B)所示,使铜板13、绝缘树脂层12及半导体元件50构成一体,压接突起电极16和元件电极52,并电连接突起电极16和元件电极52。由于在突起电极16及元件电极52分别覆盖有金属层17及金属层56,所以突起电极16和元件电极52进行金-金接合。此外,由于突起电极16的整体形状为随着接近前端而直径变细这样的形状,所以突起电极16顺畅地贯通绝缘树脂层12。本实施方式中,通过将铜板13压接于绝缘树脂层12,在形成有突起电极16一侧的铜板13的主表面层叠绝缘树脂层12。
接着,如图3(C)所示,通过平版印刷术,在与绝缘树脂层12相反的一侧的铜板13的主表面,与配线层14的图案吻合而选择地形成抗蚀剂72。
接着,如图3(D)所示,以抗蚀剂72为掩模蚀刻铜板13的主表面,在铜板13形成规定图案的配线层14。此后,剥离抗蚀剂72。本实施方式的配线层14的厚度约为20μm。
接着,如图3(E)所示,通过平版印刷术,在与绝缘树脂层12相反的一侧的配线层14的主表面形成保护层18,该保护层18在与焊料突块20的形成位置对应的区域具有开口部18a。
接着,如图3(F)所示,在开口部18a内形成焊料突块20。
根据以上说明的制造工序,形成半导体组件30。另外,在不搭载半导体元件50的情况下,得到元件搭载用基板10。
(热冲击试验可靠性的评价)
在表1中示出对按照上述顺序形成的半导体组件30(实施例)和未对突起电极的表面实施粗化处理的半导体组件(比较例)进行JIS C 0025所规定的热冲击试验的结果。在表1中,实施例和比较例的表面的凹凸程度按如下方式进行测量。即,首先,在突起电极的侧剖面的SEM(扫描型电子显微镜)图像上,对突起电极的侧面及顶部面,分别在任意的10个部位设定两点,使两点间的直线距离为5μm。然后,实际测量设定的两点间的沿突起电极表面的路程。用实际测量的路程值除以5μm,求出凹凸的程度。
【表1】
进行热冲击试验的结果,相对于在比较例的突起电极中发现其与绝缘树脂层12之间的剥离,在实施例的突起电极16中却没有发现其与绝缘树脂层12之间的剥离。
如上述说明,本实施方式的元件搭载用基板10通过对突起电极16的侧面实施粗化处理而形成凹凸,相对于顶部面,增大侧面的表面粗糙度。因此,利用因凹凸而带来的锚定效果,突起电极16和绝缘树脂层12之间的密接性提高。由此,即便是在如下情况下,即因半导体组件30的制造工序、半导体组件30向印刷线路基板的安装工序或使用环境等中的温度变化而产生热应力的情况下,也能够抑制突起电极16和绝缘树脂层12的剥离。
其结果是,在元件搭载用基板10层叠半导体元件50的情况下,在突起电极16和元件电极52之间难以产生断线,突起电极16和元件电极52之间的连接可靠性提高。此外,由于能够确实地进行突起电极16的定位,所以也能提高突起电极16和元件电极52之间的连接可靠性。并且,由于即使对突起电极16表面实施粗化处理,突起电极16的顶部面也能保持平坦,所以能防止突起电极16和元件电极52之间的接触性降低,提高两者的连接可靠性。另外,由于突起电极16和元件电极52之间的连接可靠性提高,所以在将半导体组件30安装在印刷线路基板时,半导体组件30向印刷线路基板的安装可靠性提高。
(实施方式2)
在上述实施方式1中,虽然作为金属板使用由轧制铜构成的铜板13,但在本实施方式中,作为金属板不是使用轧制金属而能使用电解金属,这点与实施方式1不同。以下说明本实施方式。另外,突起电极16和元件电极52的连接方法与实施方式1相同,对于与实施方式1相同的结构标注相同的附图标记,省略其说明。
图4(A)~图4(E)是表示实施方式2的突起电极16的形成方法的工序剖面图。
如图4(A)所示,准备厚度至少比突起电极16的高度和配线层14的厚度之和大且作为金属板的铜板13。在此,铜板13由轧制铜或电解铜构成。
接着,如图4(B)所示,通过平版印刷术,在铜板13的一主表面选择地形成在突起电极16的预定形成区域具有开口部73a的抗蚀剂73。
接着,如图4(C)所示,在开口部73a中露出的铜板13的表面,通过例如电解电镀法或无电解电镀法形成镍(Ni)/金(Au)镀层等金属层17。铜板13的表面由于是粗化处理前,所以保持大致平坦。因此,能够在铜板13的表面形成平坦且厚度均匀的金属层17。
接着,如图4(D)所示,剥离抗蚀剂73。
接着,如图4(E)所示,以金属层17为掩模,在铜板13形成规定图案的突起电极16。接着,为了在侧面形成凹凸,对突起电极16的表面实施粗化处理,以使突起电极16侧面的表面粗糙度相比顶部面的表面粗糙度变大。在此,作为铜板13而使用电解铜的情况下,形成突起电极16的铜的晶粒相对于突起电极16的顶部面垂直地排列。因此,与实施方式1同样地,若在形成金属层17之前对突起电极16表面实施粗化处理,则导致在顶部面也形成凹凸。其结果是,未形成平坦的金属层17,导致与元件电极52之间的连接可靠性降低。但是,在本实施方式中,由于在粗化处理前形成有金属层17,所以,即使在铜板13由电解铜构成的情况下,也能保持突起电极16的顶部面平坦,其结果是保持与元件电极52的接触面平坦。
按照以上说明的工序,在铜板13形成突起电极16。
根据本实施方式,除实施方式1的上述效果外,还能取得如下效果。即,在本实施方式中,由于在对突起电极16表面实施粗化处理前,在突起电极16的顶部面形成有金属层17,所以即使为铜板13使用电解铜的情况,也能保持突起电极16的顶部面平坦。因此,即使为铜板13使用电解铜的情况,也能提高突起电极16和绝缘树脂层12的密接性,并且提高突起电极16和元件电极52的连接可靠性。此外,由于使用金属层17作为突起电极16形成时的掩模,所以能削减元件搭载用基板10的制造工序数。
(实施方式3)
接着,说明具备本发明的半导体组件的便携式设备。再有,虽然作为便携式设备示出了搭载在手机上的例子,但例如也可以是个人用便携式信息终端(PDA)、数字摄像机(DVC)、以及数字照相机(DSC)这样的电子设备。
图5是表示具备本发明的实施方式的半导体组件30的手机的结构图。手机111为由可动部120连结第一框体112和第二框体114的结构。第一框体112和第二框体114能以可动部120为轴转动。在第一框体112中设置有显示文字或图像等信息的显示部118和扬声器部124。在第二框体114中设置有操作用按钮等操作部122和麦克风部126。将本发明的各实施方式的半导体组件30搭载在这样的手机111的内部。
图6是图5所示的手机的局部剖面图(第一框体112的剖面图)。经由焊料突块20,将本发明各实施方式的半导体组件30搭载于印刷基板128,经由这样的印刷基板128与显示部118等电连接。此外,在半导体组件30的背面侧(与焊料突块20相反的一侧的面)设置有金属基板等散热基板116,例如,使自半导体组件30产生的热量不积聚在第一框体112内部,可以有效地向第一框体112的外部散热。
根据本发明的实施方式的元件搭载用基板10及半导体组件30,半导体组件30向印刷线路基板的安装可靠性提高。因此,对搭载有这种半导体组件30的本实施方式的便携式设备而言,其可靠性提高。
本发明不限于上述各实施方式,基于本领域技术人员的知识还可以进行各种设计变更等变形,增加这些变形的实施方式也包含在本发明的范围内。
例如,在上述各实施方式中,元件搭载用基板的配线层是单层,但是不限于此,配线层也可以是更多层。另外,在配线层的最外面形成有焊料突块,但是不限于此。例如,也可以在配线层粘接MOS晶体管,并将MOS晶体管的源电极、漏极电极以及栅极电极与配线层电连接。
另外,本发明的结构,可以适用于称为晶片级CSP(Chip Size Package:芯片尺寸封装)工艺的半导体封装的制造工艺。由此可以谋求半导体组件的薄型化、小型化。
本发明基于2008年1月31日提交的在先日本专利申请No.2008-022011并要求它的优先权,其全部内容通过参照合并在此。
Claims (11)
1、一种元件搭载用基板,其特征在于,包括:
绝缘树脂层;
设置在所述绝缘树脂层的一主表面的配线层;以及
与所述配线层电连接且从所述配线层向所述绝缘树脂层侧突出的突起电极;其中,
在所述突起电极的侧面形成有凹凸,与所述突起电极的顶部面相比,所述侧面的表面粗糙度大。
2、根据权利要求1所述的元件搭载用基板,其特征在于,
所述凹凸为如下凹凸,即相对于所述侧面上的任意两点间的直线距离,所述两点间的沿凹凸表面的路程的比例为大于大约1.22。
3、根据权利要求1所述的元件搭载用基板,其特征在于,
所述侧面的表面粗糙度Rmax为大约1.0μm~大约2.0μm。
4、根据权利要求1所述的元件搭载用基板,其特征在于,
所述突起电极由轧制金属构成。
5、一种半导体组件,其特征在于,包括:
权利要求1所述的元件搭载用基板;和
设置有与所述突起电极对置的元件电极的半导体元件;其中
所述突起电极贯通所述绝缘树脂层,且所述突起电极和所述元件电极电连接。
6、一种便携式设备,其特征在于,
搭载有权利要求5所述的半导体组件。
7、一种元件搭载用基板的制造方法,其特征在于,包括如下工序:
准备突出设置有突起电极且由轧制金属构成的金属板的工序;
在所述突起电极的侧面形成凹凸的粗化工序;
在形成有所述突起电极一侧的所述金属板的主表面层叠绝缘树脂层的工序;以及
选择地去除所述金属板而形成配线层的工序。
8、一种元件搭载用基板的制造方法,其特征在于,包括如下工序:
在金属板的一主表面的规定区域形成金属层的工序;
以所述金属层为掩模,选择地去除形成有所述金属层一侧的所述金属板的主表面而形成突起电极的工序;
在所述突起电极的侧面形成凹凸的粗化工序;
在形成有所述突起电极一侧的所述金属板的主表面层叠绝缘树脂层的工序;以及
选择地去除所述金属板而形成配线层的工序。
9、一种半导体组件的制造方法,其特征在于,包括如下工序:
准备突出设置有突起电极且由轧制金属构成的金属板的工序;
在所述突起电极的侧面形成凹凸的粗化工序;
隔着绝缘树脂层,压接所述金属板和设置有与所述突起电极对应的元件电极的半导体元件,使所述突起电极贯通所述绝缘树脂层,从而电连接所述突起电极和所述元件电极的压接工序;以及
选择地去除所述金属板而形成配线层的工序。
10、一种半导体组件的制造方法,其特征在于,包括如下工序:
在金属板的一主表面的规定区域形成金属层的工序;
以所述金属层为掩模,选择地去除形成有所述金属层一侧的所述金属板的主表面而形成突起电极的工序;
在所述突起电极的侧面形成凹凸的粗化工序;
隔着绝缘树脂层,压接所述金属板和设置有与所述突起电极对应的元件电极的半导体元件,使所述突起电极贯通所述绝缘树脂层,从而电连接所述突起电极和所述元件电极的压接工序;以及
选择地去除所述金属板而形成配线层的工序。
11、根据权利要求9所述的半导体组件的制造方法,其特征在于,
所述绝缘树脂层通过加压而产生塑性流动。
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