CN104617050B - 晶圆级封装方法 - Google Patents

晶圆级封装方法 Download PDF

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Publication number
CN104617050B
CN104617050B CN201410762885.9A CN201410762885A CN104617050B CN 104617050 B CN104617050 B CN 104617050B CN 201410762885 A CN201410762885 A CN 201410762885A CN 104617050 B CN104617050 B CN 104617050B
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wafer
protective layer
layer
passivation layer
forming
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CN104617050A (zh
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施建根
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Tongfu Microelectronics Co Ltd
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Tongfu Microelectronics Co Ltd
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Priority to US14/964,869 priority patent/US9437511B2/en
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract

本发明涉及一种晶圆级封装方法，在晶圆上各晶片之间的连接梗上形成通孔；在所述晶圆上形成保护层，并露出用于植焊球的植球点，所述保护层包括形成在所述晶圆顶面的上保护层、形成在所述晶圆底面的下保护层、以及在各所述通孔之间的中间保护层，所述中间保护层连接所述上保护层和所述下保护层；在露出的所述植球点上植焊球；其中，所述连接梗是各晶片之间划线槽下方的连接部分。不需要形成第三钝化层，避免第三钝化层底部与晶圆之间分层，中间保护层连接上保护层和下保护层，避免保护层与晶圆之间发生分层，提高了产品的良率。

Description

晶圆级封装方法
技术领域
本发明涉及半导体封装技术领域，尤其涉及晶圆级封装方法。
背景技术
半导体器件在成本降低和前道晶圆制造工艺的提升的共同促进下，实现了同样功能的半导体器件的单体芯片尺寸越来越小的目标，可以在半导体晶圆上形成可以直接应用在印刷电路板上安装的焊球。由于半导体晶圆制造工艺局限性或者设计者出于同一款集成电路多种用途的考虑，在半导体晶圆级封装时需要对传输电信号的输入输入端子重新定义位置设置焊球。
参见图1，是有技术中重新定义焊球位置的方式晶圆结构，半导体晶圆101’主动面形成电路后表面有电极102’和第一钝化层103’，半导体晶圆上有多个半导体晶片100’，多个半导体晶片100’之间通过划线槽104a’连接；在第一钝化层上形成第二钝化层110’，第二钝化层在电极102附近形成开口；在第二造钝化层110’上形成再布线金属层210’；再形成第三造钝化层310’，第三钝化层在再布线210’上形成开口；在第三钝化层开口上形成凸点下金属层410’；通过植球回流的方法形成球形凸点510’；在半导体晶圆101’的背面贴一层背胶膜610’并固化；切割后形成全包封晶圆级封装的单体100’。
这种方式容易形成第三钝化层310’底部与再布线金属层210’顶部之间的分层，这种产品容易造成后续的电性能失效。
发明内容
在下文中给出关于本发明的简要概述，以便提供关于本发明的某些方面的基本理解。应当理解，这个概述并不是关于本发明的穷举性概述。它并不是意图确定本发明的关键或重要部分，也不是意图限定本发明的范围。其目的仅仅是以简化的形式给出某些概念，以此作为稍后论述的更详细描述的前序。
本发明还提供一种晶圆级封装方法，在晶圆上各晶片之间的连接梗上形成通孔；在所述晶圆上形成保护层，并露出用于植焊球的植球点，所述保护层包括形成在所述晶圆顶面的上保护层、形成在所述晶圆底面的下保护层、以及在各所述通孔之间的中间保护层，所述中间保护层连接所述上保护层和所述下保护层；在露出的所述植球点上植焊球；其中，所述连接梗是各晶片之间划线槽下方的连接部分。
本发明至少具备如下有益效果：不需要形成第三钝化层，避免第三钝化层底部与晶圆之间分层，中间保护层连接上保护层和下保护层，避免保护层与晶圆之间发生分层，提高了产品的良率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中的晶圆结构的示意图；
图2为本发明晶圆级封装方法的流程图；
图3为本发明晶圆级封装结构(芯片结构)的示意图；
图4-图8为本发明晶圆级封装方法各步骤的示意图。
附图标记：
103-第一钝化层；110-第二钝化层；210-布线金属层；105-边缘部；100a-晶片；102-电极；104a-划线槽；104b-连接梗；104c-残余的连接梗；420-铜柱；321-盲孔；321a-通孔；320-保护层；320a-上保护层；320b-下保护层；320c-中间保护层；200-芯片结构；510-焊球。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。在本发明的一个附图或一种实施方式中描述的元素和特征可以与一个或更多个其它附图或实施方式中示出的元素和特征相结合。应当注意，为了清楚的目的，附图和说明中省略了与本发明无关的、本领域普通技术人员已知的部件和处理的表示和描述。基于本发明中的实施例，本领域普通技术人员在没有付出创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明以下各实施例中，实施例的序号和/或先后顺序仅仅便于描述，不代表实施例的优劣。对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
本发明涉及一种晶圆级封装方法，参见图2和3，包括步骤10，在晶圆上各晶片100a之间的连接梗上形成通孔321a(参见图6b)；步骤20，在所述晶圆上形成保护层320，并露出用于植焊球510的植球点(参见图7)，所述保护层包括形成在所述晶圆顶面的上保护层320a、形成在所述晶圆底面的下保护层320b、以及在各所述通孔之间的中间保护层320c，所述中间保护层连接所述上保护层和所述下保护层；步骤30，在露出的所述植球点上植焊球(参见图8)。
需要理解，所述连接梗是各晶片之间划线槽下方的连接部分。可选的保护层为树脂。采用树脂作为保护层不仅能够节约成本，还能够形成全包封的结构，能够更好的抵挡外部环境如湿气、静电对器件的损伤。同时，因为由同一种材料包裹，热膨胀系数相同，因此不会引起应力释放造成的翘曲。
当然，在植球后，需要切割连接梗，使晶圆上的各晶片成多个芯片结构200。可以理解，除了切割连接梗，保护层也需要被相应的切割，例如中间保护层可能被切割成两份，分别属于两个独立的晶片。
晶圆上包括电极以及第一钝化层，第一钝化层具有开口部，电极从所述开口部露出；在包裹所述保护层之前，在所述第一钝化层上形成布线金属层，通过所述开口部与所述电极连通。当然，电极是形成在晶圆上的，或者说是形成在晶圆上各晶片上的。
在形成上述保护层前，在布线金属层上形成铜柱，铜柱的上表面为所述植球点。
在一种可选的实施方式中，布线金属层直接形成于第一钝化层上(图中未示出)。或者也可以是在第一钝化层上先形成第二钝化层，布线金属层形成于所述第二钝化层上(图4-图8均为这种方式，并且图3示出的结构也是这种方式做成的)。
在步骤10中，在连接梗上形成通孔的可以为直接贯通连接梗形成通孔，也可以如图6a和6b所示，先从所述连接梗正面形成预定深度的盲孔321(如图6a)，再研磨各晶片底面和所述连接梗的底面，直至将盲孔研磨成通孔321a(如图6b)。
为了方便理解，先说明一下在执行步骤10之前的晶圆结构及该晶圆的形成方法。
晶圆包括多个晶片100a，每个晶片上都有：电极102以及第一钝化层103，第一钝化层具有开口部，电极从开口部露出，还包括：布线金属层210，形成于第一钝化层上，通过开口部与所述电极连通；铜柱420，形成于布线金属层上；焊球510形成于所述铜柱上；保护层320，完全包裹所述晶片、电极、第一钝化层、布线金属层和所述铜柱形成的结构，焊点从所述保护层中露出。在一种可选的实施方式中，在第一钝化层和所述布线金属层之间，还形成有第二钝化层110，图3中表示的为这种形式，即在第一钝化层上形成第二钝化层，在第二钝化层上形成布线金属层。
结合本发明晶圆级封装方法和上述的晶圆，其最终制成的结构参见图3所示。
可以理解，这是单独一个晶片及其上形成的机构，即是单个的晶片结构200，当然在制造时，多个晶片100a是组成一个完整的晶圆的，在晶圆的每个晶片上都独立形成上述电极、第一钝化层、布线金属层、铜柱和焊球。每个晶片之间通过连接梗连接。另外，需要注意的是，可以将晶圆理解为是对多个晶片的统称，下文提及到的对晶圆的处理方法，相应的也表示对单个晶片同样处理。同样的，在提及晶圆时，自然的包括各晶片和连接梗，例如上述研磨晶圆底面，即研磨各晶片的底面和连接梗的底面。
另外，如上述，在制造时，多个晶片100a是组成一个完整的晶圆的，在晶圆的每个晶片上都独立形成上述电极、第一钝化层、布线金属层、铜柱和焊球等结构。每个晶片之间通过连接梗104b连接，当然，在最后会破坏连接梗的连接，使各个晶片独立。如图所示，在组成晶圆的晶片中，位于最外围的晶片外侧具有边缘部105，边缘部外侧不再连接另外的晶片。图中仅仅完整的表示了两个晶片及其上的结构，其余的晶片在图中已经简化，但已经用附图标记标出。另外，需要注意的是，在简化的部分，连接梗和晶片的尺寸都相应的进行了减小，但是对这些简化部分的处理方式是不变的，例如在简化部分的连接梗上同样有盲孔或者通孔，只是在图中所显示的较小或者不明显(如图6a至图8)，而实质上与未简化示出的部分是相同的。从图6a到图8中可以看出，简化部分的盲孔或者通孔的直径与连接梗的宽度是相同的，这可以是一种实施方式，即，在连接梗上形成通孔时，该通孔直径可以与连接梗相同，最终形成芯片结构时，可能晶片结构内就不包括残余的连接梗。图3所示的晶片结构就包括残余的连接梗104c，当然如上述，在一种实施方式中，晶片结构可以没有该残余的连接梗。
在进行步骤10之前，形成上述晶圆的方法可以为：步骤1，在第一钝化层103之上，形成布线金属层210，并使布线金属层与所述电极102连接(如图4所示)；步骤2，在布线金属层上形成铜柱420(参见图5)。
最后应说明的是：虽然以上已经详细说明了本发明及其优点，但是应当理解在不超出由所附的权利要求所限定的本发明的精神和范围的情况下可以进行各种改变、替代和变换。而且，本发明的范围不仅限于说明书所描述的过程、设备、手段、方法和步骤的具体实施例。本领域内的普通技术人员从本发明的公开内容将容易理解，根据本发明可以使用执行与在此所述的相应实施例基本相同的功能或者获得与其基本相同的结果的、现有和将来要被开发的过程、设备、手段、方法或者步骤。因此，所附的权利要求旨在在它们的范围内包括这样的过程、设备、手段、方法或者步骤。

Claims (7)

1.一种晶圆级封装方法，其特征在于，
在晶圆上各晶片之间的连接梗上形成通孔；
在所述晶圆上形成保护层，并露出用于植焊球的植球点，所述保护层包括形成在所述晶圆顶面的上保护层、形成在所述晶圆底面的下保护层、以及在各所述通孔之间的中间保护层，所述中间保护层连接所述上保护层和所述下保护层，形成所述保护层时，先软化所述保护层材料，使所述保护层材料从所述晶圆的一侧沿所述通孔流至另一侧，以包裹所述晶圆；
在露出的所述植球点上植焊球；
沿所述连接梗所在位置分割所述晶圆，形成多个独立的芯片结构；其中，
所述连接梗是各晶片之间划线槽下方的连接部分。
2.根据权利要求1所述的方法，其特征在于，
所述保护层的材料为树脂。
3.根据权利要求1所述的方法，其特征在于，
所述晶圆上包括电极以及钝化层，所述钝化层具有开口部，电极从所述开口部露出；
在形成所述保护层之前，在所述钝化层上形成布线金属层，所述布线金属层通过所述开口部与所述电极连通；
所述晶圆上包括电极以及第一钝化层，所述第一钝化层具有开口部，电极从所述开口部露出；
在包裹所述保护层之前，在所述第一钝化层上形成布线金属层，通过所述开口部与所述电极连通。
4.根据权利要求1所述的方法，其特征在于，
在包裹所述保护层前，在布线金属层上形成铜柱，所述铜柱的上表面为所述植球点。
5.根据权利要求3所述的方法，其特征在于，
所述布线金属层直接形成于第一钝化层上。
6.根据权利要求3所述的方法，其特征在于，
在第一钝化层上先形成第二钝化层，所述布线金属层形成于所述第二钝化层上。
7.根据权利要求1所述的方法，其特征在于，
先从所述连接梗正面形成预定深度的盲孔，再研磨晶圆底面，直至将盲孔研磨成通孔。
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