CN104615979A - Fingerprint identification module and encapsulation method thereof, and fingerprint identification module group and encapsulation method thereof - Google Patents
Fingerprint identification module and encapsulation method thereof, and fingerprint identification module group and encapsulation method thereof Download PDFInfo
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- CN104615979A CN104615979A CN201510040942.7A CN201510040942A CN104615979A CN 104615979 A CN104615979 A CN 104615979A CN 201510040942 A CN201510040942 A CN 201510040942A CN 104615979 A CN104615979 A CN 104615979A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
The invention discloses a fingerprint identification module and an encapsulation method thereof, and a fingerprint identification module group and an encapsulation method thereof. The encapsulation method of the fingerprint identification module includes: providing a protection layer and a wafer which comprises a substrate and a connection electrode located on the substrate; bonding the protection layer with one face of the wafer, provided with the connection electrode; etching the substrate so as to form substrate through holes, wherein the substrate through holes are respectively a first through hole and a second through hole, the first through hole exposes the connection electrode, and the second through hole runs through the substrate; forming a repeated wiring pattern in the first through hole and on the substrate after the substrate through holes are formed by etching the substrate, and electrically connecting the repeated wiring pattern with the connection electrode; implanting welding balls in the repeated wiring pattern, electrically connecting the welding balls with the repeated wiring pattern, and then forming a wafer level fingerprint identification chip; cutting the wafer level fingerprint identification chip along the second through hole so as to form a plurality of fingerprint identification chips. The fingerprint identification module and the encapsulation method thereof, and the fingerprint identification module group and the encapsulation method thereof can solve the problem that sensitivity and identification efficiency of an existing fingerprint identification module group are low, and cost of the existing fingerprint identification module group is low.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, be specifically related to a kind of fingerprint identification module and method for packing, fingerprint recognition module and method for packing.
Background technology
There is due to fingerprint the characteristics such as unchangeable property, uniqueness and convenience, after the fingerprint collected can being processed by fingerprint recognition system, carry out authentication fast and accurately.
First fingerprint signal is gathered by fingerprint recognition module, undertaken identifying and processing by the fingerprint signal collected input fingerprint recognition system afterwards, therefore, the quality of fingerprint signal directly can have influence on the precision of identification and the processing speed of fingerprint recognition system, therefore, fingerprint recognition module is one of critical component in fingerprint recognition system.
Fig. 1 is the structural drawing of fingerprint recognition module in prior art.As shown in Figure 1, described fingerprint recognition module comprises: the metal support 1 being provided with through hole, the bonding wire 4 that sapphire cover plate 2 in metal support through hole, fingerprint recognition chip 3 are electrically connected with fingerprint recognition chip 3, be filled in capsulation material 5 between metal support 1 and fingerprint recognition chip 3, and by the substrate 6 that bonding wire 4 is electrically connected with fingerprint recognition chip 3, and substrate 6 is electrically connected with metal support 1.Be spaced sapphire cover plate and capsulation material between the finger contact face of existing fingerprint recognition module and the sensitive surface of fingerprint recognition chip, the thickness of fingerprint recognition module is thicker, and make the fingerprint signal decay collected, sensitivity decrease, recognition efficiency reduces.In addition, existing fingerprint recognition module adopts sapphire as the cover sheet of fingerprint recognition chip, expensive; and when making fingerprint recognition module; single fingerprint recognition chip carries out assembling respectively and forms fingerprint recognition module, and packaging efficiency is low, and fingerprint recognition module cost is higher.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of fingerprint identification module and method for packing, fingerprint recognition module and method for packing, to solve the sensitivity of existing fingerprint recognition module and recognition efficiency is low and cost is higher problem.
First aspect, embodiments provides a kind of method for packing of fingerprint identification module, and described method comprises:
There is provided protective seam and wafer, described wafer comprises substrate and is positioned at the connecting electrode on substrate;
The one side that described protective seam and described wafer have connecting electrode is carried out bonding;
Etch described substrate and form substrate through vias, described substrate through vias comprises the first through hole and the second through hole, and wherein, described first through hole is by out exposed for described connecting electrode, and described second through hole runs through described substrate;
In described first through hole and etching formed on the described substrate after substrate through vias and form the figure that reroutes, described in reroute figure and the electrical connection of described connecting electrode;
The described figure that reroutes is implanted electrical connection liner, forms wafer scale fingerprint recognition chip;
Along described second through hole, described wafer scale fingerprint recognition chip is cut, form multiple fingerprint identification module.
Further, the size of described protective seam and the measure-alike of described wafer.
Further, the material of described protective seam is the glass material of strengthening, the epoxide resin material of glass ceramic material or doping.
Further, described protective seam and described wafer carry out bonding by the mode of hot glue bonding, monox bonding or glass paste bonding.
Further, after the one side described protective seam and described wafer with connecting electrode carries out bonding, etch before described substrate forms substrate through vias, described method also comprises:
Reduction processing is carried out to described substrate.
Further, etch described substrate and form substrate through vias, after described substrate through vias comprises the first through hole and the second through hole, before the described substrate in described first through hole and after etching formation substrate through vias forms the figure that reroutes, described method also comprises:
The surface of the described substrate after the surface of described first through hole, the surface of the second through hole and etching form substrate through vias forms insulation course;
Remove the described insulation course being positioned at described first via bottoms, by out exposed for described connecting electrode.
Further, described substrate in described first through hole and after etching formation substrate through vias forms the figure that reroutes, after described reroute figure and the electrical connection of described connecting electrode, the described figure that reroutes is implanted electrical connection liner, before forming wafer scale fingerprint recognition chip, described method also comprises:
Described substrate after described reroute figure and etching formation substrate through vias forms packed layer;
Packed layer described in photoetching to reroute figure with exposed portion.
Second aspect, embodiments provides a kind of fingerprint identification module, comprising: protective seam, fingerprint recognition chip, reroute figure and electrical connection liner; Wherein,
Described fingerprint recognition chip comprises substrate and is positioned at the connecting electrode on substrate, and described fingerprint recognition chip attach is below described protective seam;
The first through hole is provided with in described substrate;
The described filling graph that reroutes in described first through hole and be positioned on described substrate, described in reroute figure and the electrical connection of described connecting electrode;
Reroute on figure described in described electrical connection liner is positioned at.
Further, also comprise:
Be positioned at the insulation course of described first through-hole side wall and described substrate surface.
Further, also comprise:
The packed layer rerouted described in being positioned on figure and described substrate.
The third aspect, embodiments provides a kind of method for packing of fingerprint recognition module, comprises the method for packing of the fingerprint identification module described in first aspect, and following steps:
Substrate is welded with described electrical connection liner, is electrically connected with described fingerprint identification module to make described substrate;
Described substrate and described protective seam form metal support; described metal support is electrically connected with described substrate; described metal support has metal support through hole; described metal support through hole is corresponding with the induction zone of described fingerprint identification module, and described metal support through hole is by out exposed for described for part protective seam.
Further, before the one side described protective seam and described wafer with connecting electrode carries out bonding, described method also comprises:
Described protective seam forms dura mater.
Further, the material of described dura mater is diamond like carbon, silicon nitride or silit.
Further,
On described protective seam, dura mater is formed by chemical vapour deposition technique or physical vaporous deposition.
Fourth aspect, embodiments provides a kind of fingerprint recognition module, comprises the fingerprint identification module described in second aspect, and: substrate and metal support; Wherein,
Described substrate welds with described electrical connection liner, is electrically connected with described fingerprint identification module to make described substrate;
Described metal support is positioned on described substrate and described protective seam; described metal support is electrically connected with described substrate; described metal support has metal support through hole; described metal support through hole is corresponding with the induction zone of described fingerprint identification module, and described metal support through hole is by out exposed for described for part protective seam.
Further, also comprise:
Be positioned at the dura mater on described protective seam.
Further, the material of described dura mater is diamond like carbon, silicon nitride or silit.
The fingerprint identification module that the embodiment of the present invention provides and method for packing, fingerprint recognition module and method for packing; by by protective seam and wafer bonding; and described protective seam fits in above the induction zone of fingerprint identification module; reduce the spacing of finger contact face to the induction zone of fingerprint identification module; improve sensitivity and the recognition efficiency of fingerprint recognition module; and this protective seam is formed in fingerprint recognition chip package process; avoid the assembling of later stage single fingerprint identification module and cover sheet, reduce the cost of fingerprint recognition module.
Accompanying drawing explanation
Exemplary embodiment of the present invention will be described in detail by referring to accompanying drawing below, the person of ordinary skill in the art is more clear that above-mentioned and other feature and advantage of the present invention, in accompanying drawing:
Fig. 1 is the structural drawing of fingerprint recognition module in prior art;
Fig. 2 is the process flow diagram of the method for packing of a kind of fingerprint identification module that the embodiment of the present invention provides;
Fig. 3 a to Fig. 3 j is the sectional view that in the method for packing of a kind of fingerprint identification module provided in Fig. 2, each step is corresponding;
Fig. 4 is the process flow diagram of the method for packing of a kind of fingerprint recognition module that the embodiment of the present invention provides;
Fig. 5 a and Fig. 5 b is the sectional view of step 27 and step 28 correspondence in the method for packing of a kind of fingerprint recognition module that Fig. 4 provides respectively.
The technical characteristic that Reference numeral in figure refers to respectively is:
Protective seam, 11; Dura mater, 111; Substrate, 12; Connecting electrode, 13; Bonding material 14; First through hole, a1; Second through hole, a2; Insulation course, 15; Reroute figure, 16; Packing material, 17; Soldered ball, 18; Substrate, 19; Metal support, 20.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content, and the size of structure shown in accompanying drawing and size, be not the size of actual or proportional with reality structure.
Fig. 2 is the process flow diagram of the method for packing of a kind of fingerprint identification module that the embodiment of the present invention provides, Fig. 3 a to Fig. 3 j is the sectional view that in the method for packing of a kind of fingerprint identification module provided in Fig. 2, each step is corresponding, is described below in conjunction with the method for packing of Fig. 2 and Fig. 3 a to Fig. 3 j to the fingerprint identification module that the embodiment of the present invention provides.
Step 11, provide protective seam 11 and wafer, the connecting electrode 13 that described wafer comprises substrate 12 and is positioned on substrate 12.
In this step, preferably, described protective seam 11 is wafer scale protective seam 11, can by size identical with described wafer for the epoxide resin material machine-shaping of the glass material of strengthening, glass ceramic material or doping.Wherein, the glass material of described strengthening can be the glass material of overall strengthening or local strengthening, has the feature of high strength and thermal stability; The compound substance that described glass ceramic material is through high temperature melt, shaping, thermal treatment and the class crystalline phase made are combined with glassy phase, has the superior functions such as physical strength is high, hot expansibility is adjustable, heat shock resistance, resistance to chemical attack, low-dielectric loss; Can adulterate in the epoxy silica flour, porcelain powder, iron powder, cement or emery of the epoxy resin of described doping makes it have very strong hardness.The material of described substrate 12 can be silicon.Described connecting electrode 13 can by any applicable material, and such as metal is made, and further specifically, described connecting electrode 13 can be made up of materials such as tin, aluminium, copper or silver, and the present embodiment is not limited at this.
Step 12, the one side described protective seam 11 and described wafer with connecting electrode 13 carry out bonding.
As shown in Figure 3 a, preferably, by bonding material 14, described protective seam 11 can be carried out bonding with the one side that described wafer has connecting electrode 13.Described bonding material 14 can be glue, monox or glass paste; described glue can be heat-sensitive glue or pressure sensitive adhesive etc.; therefore corresponding, described protective seam 11 has the one side permanent bonding of connecting electrode 13 by the mode of hot glue bonding, monox bonding or glass paste bonding and described wafer.
Preferably, after the step 12, before step 13, described method also can comprise:
Step 12a, reduction processing is carried out to described substrate 12.
As shown in Figure 3 b, particularly, by silicon grinding technics, the substrate 12 of described wafer is thinned to target thickness, the scope of described target thickness can be 20 μm, can also be other target thicknesses of actual demand certainly, in this no limit.
Step 13, etch described substrate 12 and form substrate through vias, described substrate through vias comprises the first through hole a1 and the second through hole a2, and wherein, described first through hole a1 is by out exposed for described connecting electrode 13, and described second through hole a2 runs through described substrate 12.
As shown in Figure 3 c, particularly, form substrate through vias on the substrate 12 by photoetching and silicon etching process, thus form silicon through hole (Through Silicon Vias is called for short TSV) structure.Described first through hole a1 is by out exposed for described connecting electrode 13, so that the figure that reroutes formed in subsequent technique is electrically connected with described connecting electrode 13, described second through hole a2 runs through described substrate 12, and described second through hole a2 is used for becoming single fingerprint identification module to wafer scale fingerprint recognition chip cutting in subsequent technique.
Preferably, after step 13, before step 14, described method also can comprise:
Step 13a, on the surface of described first through hole a1, the surface of the second through hole a2 and the etching surface that forms the described substrate 12 after substrate through vias forms insulation course 15.
As shown in Figure 3 d, particularly, by chemical vapor deposition method (Chemical Vapor Deposition, be called for short CVD) or spraying coating process, the side surface and lower surface, the side surface of the second through hole a2 and the substrate 12 of lower surface and the wafer after etching formation substrate through vias of the first through hole a1 form insulation course 15, and the material of described insulation course 15 can be silicon dioxide, silicon nitride or macromolecular material etc.Material due to substrate 12 is silicon, therefore, forms insulation course 15 substrate 12 can be prevented directly to be electrically connected with the figure that reroutes and the short circuit that causes or leakage phenomenon on the surface of the surface of described first through hole a1 and the second through hole a2.
The described insulation course 15 that step 13b, removal are positioned at bottom described first through hole a1, by out exposed for described connecting electrode 13.
As shown in Figure 3 e, form the surface formation insulation course 15 of substrate through vias back substrate 12 on the surface of the surface of described first through hole a1, described second through hole a2 and etching after, the described insulation course 15 of the first through hole a1 lower surface is also needed to get rid of, particularly, the insulation course 15 of the first via bottoms is positioned at by dry etching or laser ablation, with by out exposed for the connecting electrode 13 of described wafer, the figure that reroutes formed in subsequent technique can be electrically connected with described connecting electrode 13.
Step 14, in described first through hole a1 and etching formed on the described substrate 12 after substrate through vias and form the figure 16 that reroutes, described in reroute figure 16 and described connecting electrode 13 be electrically connected.
As illustrated in figure 3f, particularly, fill in described first through hole a1 by electric plating method and reroute material and form on the described surface of the substrate 12 after forming described substrate through vias that etches the material that reroutes, the material that the part on substrate 12 surface rerouted afterwards etches, and forms the figure 16 that reroutes.The described material that reroutes is metal material, such as copper.
The fingerprint identification module that the embodiment of the present invention provides forms the space that can hold electrical connection bonding wire (being filled in the figure that reroutes in the first through hole a1) by silicon through hole technology, thus bonding wire can not be damaged because suffering oppression, improve the anti-repressive of fingerprint recognition module, thus enhance the reliability and stability of fingerprint recognition module electrical connection.
Preferably, after step 14, before step 15, described method also can comprise:
Step 14a, to be formed on the described substrate 12 after substrate through vias in described reroute figure 16 and etching and form packed layer 17.
As shown in figure 3g, described packed layer 17 is formed by coating encapsulating material, and described encapsulating material can be normally used capsulation material, such as: plastics or resin etc.Described substrate 12 after figure 16 and the etching formation substrate through vias of rerouting described in described packed layer 17 covers.Be to increase the weak performance of anti-electricity of fingerprint identification module in the benefit that figure 16 formed packed layer 17 of rerouting, thus make fingerprint identification module more stable, reliability is higher.
Packed layer 17 described in step 14b, photoetching to reroute figure 16 with exposed portion.
As illustrated in figure 3h, be positioned at the packed layer 17 rerouted on figure 16 by chemical wet etching, reroute figure 16 with exposed portion, so that the soldered ball implanted in subsequent technique is electrically connected with the described figure 16 that reroutes.
Step 15, on the described figure 16 that reroutes, implant electrical connection liner 18, form wafer scale fingerprint recognition chip.
As shown in figure 3i, particularly, described electrical connection liner 18 can be any one in metal gasket, metal salient point or soldered ball etc., when described electrical connection liner 18 is soldered balls, by ball grid array (Ball GridArray, be called for short BGA) technique fingerprint recognition wafer have the figure 16 that reroutes one side formed welded ball array, so that the later stage can assemble with substrate 19 when forming fingerprint recognition module efficiently, the material of described soldered ball can be tin, certainly can also be other metal materials, in this no limit.Particularly, described electrical connection liner 18 is formed at the part exposed and reroutes on figure 16, to make described electrical connection liner 18 be electrically connected with the figure 16 that reroutes described in the part exposed, thus forms wafer scale fingerprint recognition chip.
Step 16, along described second through hole a2, described wafer scale fingerprint recognition chip to be cut, form multiple fingerprint identification module.
As shown in Fig. 3 j, in manufacture of semiconductor, need wafer scale to be cut into a chips, then these chips are made different semiconductor packages.In the present embodiment, the wafer scale fingerprint recognition chip of formation is cut, forms multiple fingerprint identification module.Particularly, can utilize cutting tool, such as: diamond tool, the second through hole a2 along wafer scale fingerprint recognition chip cuts, and many fingerprint recognition chips is separated, thus forms multiple independently fingerprint identification module.
The embodiment of the present invention additionally provides a kind of fingerprint identification module, and as shown in Fig. 3 j, described fingerprint identification module comprises protective seam 11, fingerprint recognition chip, reroute figure 16 and electrical connection liner 18.
The connecting electrode 13 that described fingerprint recognition chip comprises substrate 12 and is positioned on substrate 12; described fingerprint recognition chip attach is below described protective seam 11; the first through hole a1 is provided with in described substrate 12; the described figure 16 that reroutes is filled in described first through hole a1 and is positioned on described substrate 12; described figure 16 and the described connecting electrode 13 of rerouting is electrically connected, and reroutes on figure 16 described in described electrical connection liner 18 is positioned at.
In the present embodiment, the material of described substrate 12 can be silicon.Described connecting electrode 13 can by any applicable material, and such as metal is made, and further specifically, described connecting electrode 13 can be made up of materials such as tin, aluminium, copper or silver, and the present embodiment is not limited at this.
Described first through hole a1 is formed on the substrate 12 by photoetching and silicon etching process, thus forms silicon through hole (Through Silicon Vias is called for short TSV) structure.The described figure 16 that reroutes to be filled in described first through hole a1 and to be electrically connected with described connecting electrode 13.Described electrical connection liner 18 can be any one in metal gasket, metal salient point or soldered ball etc.
Preferably, described fingerprint identification module also comprises the insulation course 15 being positioned at the first through hole a1 sidewall and described substrate 12 surface.
The material of described insulation course 15 can be silicon dioxide, silicon nitride or macromolecular material etc.Material due to substrate 12 is silicon, therefore, forms insulation course 15 substrate 12 can be prevented directly to be electrically connected with the figure 16 that reroutes and the short circuit that causes or leakage phenomenon on the surface of described first through hole a1.
Preferably, described fingerprint identification module also comprises: the packed layer 17 rerouted described in being positioned on figure 16 and described substrate 12.
Described packed layer 17 is formed by coating encapsulating material, and described encapsulating material can be normally used capsulation material, such as: plastics or resin etc.Be to increase the weak performance of anti-electricity of fingerprint identification module in the benefit that figure 16 formed packed layer 17 of rerouting, thus make fingerprint identification module more stable, reliability is higher.
The method for packing of the fingerprint identification module that the embodiment of the present invention provides and fingerprint identification module, by the wafer scale protective seam of high rigidity and wafer are carried out bonding, this protective seam is formed in fingerprint recognition chip die level encapsulation process, avoid the assembling of later stage single fingerprint recognition chip cover sheet, improve the packaging efficiency of fingerprint recognition chip, in addition, by wafer scale silicon through hole technology, the figure that reroutes being used for being electrically connected is formed in the first through hole, figure of avoiding rerouting is damaged owing to oppressing, improve the reliability of fingerprint identification module electrical connection.
Fig. 4 is the process flow diagram of the method for packing of a kind of fingerprint recognition module that the embodiment of the present invention provides, the described fingerprint recognition module that this method for packing is formed can be applicable to, in the mobile terminals such as mobile phone, panel computer, notebook computer or media player, also can be applicable in the financial terminal equipments such as ATM.This embodiment is based on above-described embodiment, and be described below in conjunction with the method for packing of Fig. 3 a to Fig. 3 j, Fig. 4 and Fig. 5 a and Fig. 5 b to the fingerprint recognition module that the present embodiment provides, the method for packing of this fingerprint recognition module comprises:
Step 21, provide protective seam 11 and wafer, the connecting electrode 13 that described wafer comprises substrate 12 and is positioned on substrate 12.
The material of described protective seam 11 can be the epoxide resin material of the glass material of strengthening, glass ceramic material or doping, and described protective seam 11 is wafer scale protective seam 11, the size of described protective seam 11 and the measure-alike of described wafer.The material of described substrate 12 can be silicon.
Preferably, after step 21, before step 22, described method also comprises:
Step 21a, on described protective seam 11, form dura mater (not shown in Fig. 3 a to Fig. 3 j).
Particularly; by chemical vapour deposition technique (Chemical vapor deposition; be called for short CVD) or physical vaporous deposition (Physical Vapor Deposition, be called for short PVD) plate in one of them of described protective seam 11 hardness that the dura maters such as diamond like carbon film, silicon nitride film, carborundum films strengthen wafer scale protective seam 11 further on the surface.
Step 22, the one side described protective seam 11 and described wafer with connecting electrode 13 carry out bonding.
As shown in Figure 3 a, the one side that another surface of described protective seam 11 and described wafer have connecting electrode 13 is carried out bonding by the mode by hot glue bonding, monox bonding or glass paste bonding.
Preferably, after step 22, before step 23, described method also can comprise:
Step 22a, reduction processing is carried out to described substrate 12.
As shown in Figure 3 b, particularly, by silicon grinding technics, the substrate 12 of described wafer is thinned to target thickness, the scope of described target thickness can be 20 μm, can also be other target thicknesses certainly, in this no limit.
Step 23, etch described substrate 12 and form substrate through vias, described substrate through vias comprises the first through hole a1 and the second through hole a2, and wherein, described first through hole a1 is by out exposed for described connecting electrode 13, and described second through hole a2 runs through described substrate 12.
As shown in Figure 3 c, particularly, form substrate through vias on the substrate 12 by photoetching and silicon etching process, thus form silicon through hole (Through Silicon Vias is called for short TSV) structure.
Preferably, after step 23, before step 24, described method also comprises:
Step 23a, on the surface of described first through hole a1, the surface of the second through hole a2 and the etching surface that forms the described substrate 12 after substrate through vias forms insulation course 15.
As shown in Figure 3 d, particularly, by chemical vapor deposition method (Chemical Vapor Deposition, be called for short CVD) or spraying coating process, the side surface and lower surface, the side surface of the second through hole a2 and the substrate 12 of lower surface and the wafer after etching formation substrate through vias of the first through hole a1 form insulation course 15, and the material of described insulation course 15 can be silicon dioxide, silicon nitride or macromolecular material etc.Material due to substrate 12 is silicon, therefore, forms on the surface of the surface of described first through hole a1 and the second through hole a2 the short circuit or leakage phenomenon that cause when insulation course 15 can prevent substrate 12 to be directly electrically connected with the figure 16 that reroutes.
The described insulation course 15 that step 23b, removal are positioned at bottom described first through hole a1, by out exposed for described connecting electrode 13.
As shown in Figure 3 e, particularly, be positioned at the insulation course 15 bottom the first through hole a1 by dry etching or laser ablation, with by out exposed for the connecting electrode 13 of described wafer, the figure that reroutes formed in subsequent technique can be electrically connected with described connecting electrode 13.
Step 24, in described first through hole a1 and etching formed on the described substrate 12 after substrate through vias and form the figure 16 that reroutes, described in reroute figure 16 and described connecting electrode 13 be electrically connected.
As illustrated in figure 3f, particularly, fill in described first through hole a1 by electric plating method and reroute material and form on the described surface of the substrate 12 after forming substrate through vias that etches the material that reroutes, the material that the part on reroute material and substrate 12 surface that are filled in the second through hole a2 rerouted afterwards etches, and forms the figure 16 that reroutes.
The fingerprint recognition module that the embodiment of the present invention provides forms the space that can hold electrical connection bonding wire by silicon through hole technology, thus bonding wire can not be damaged because suffering oppression.
Preferably, after step 24, before step 25, described method also can comprise:
Step 24a, to be formed on the described substrate 12 after substrate through vias in described reroute figure 16 and etching and form packed layer 17.
As shown in figure 3g, described packed layer 17 is formed by coating encapsulating material, and described encapsulating material can be normally used capsulation material, such as: plastics or resin etc.Described substrate 12 after figure 16 and the etching formation substrate through vias of rerouting described in described packed layer 17 covers.Be to increase the weak performance of anti-electricity of fingerprint identification module in the benefit that figure 16 formed packed layer 17 of rerouting, thus make fingerprint identification module more stable, reliability is higher.
Packed layer 17 described in step 24b, photoetching to reroute figure 16 with exposed portion.
As illustrated in figure 3h, be positioned at the packed layer 17 rerouted on figure 16 by exposure imaging, reroute figure 16 with exposed portion, so that the electrical connection liner implanted in subsequent technique is electrically connected with the described figure 16 that reroutes.
Step 25, on the described figure 16 that reroutes, implant electrical connection liner 18, form wafer scale fingerprint recognition chip.
As shown in figure 3i, particularly, described electrical connection liner 18 can be any one in metal gasket, metal salient point or soldered ball etc., when described electrical connection liner 18 is soldered balls, by ball grid array (Ball GridArray, be called for short BGA) technique fingerprint recognition wafer have the figure 16 that reroutes one side formed welded ball array, so that the later stage can assemble with substrate 19 when forming fingerprint recognition module efficiently, the material of described soldered ball can be tin, certainly can also be other metal materials, in this no limit.Particularly, described electrical connection liner 18 is formed at the part exposed and reroutes on figure 16, to make described electrical connection liner 18 be electrically connected with the figure 16 that reroutes described in the part exposed, thus forms wafer scale fingerprint recognition chip.
Step 26, along described second through hole a2, described wafer scale fingerprint recognition chip to be cut, form multiple fingerprint identification module.
As shown in Fig. 3 j, particularly, can utilize cutting tool, such as: diamond tool, the second through hole a2 along wafer scale fingerprint recognition chip cuts, and many fingerprint identification modules are separated, thus forms multiple independently fingerprint identification module.
Step 27, substrate 19 to be welded with described electrical connection liner 18, be electrically connected with described fingerprint identification module to make described substrate 19.
As shown in Figure 5 a, described substrate 19 specifically can comprise flexible PCB (Flexible Flat Cable is called for short FPC) or printed circuit board (PCB) (Printed Circuit Board is called for short PCB).Particularly, described substrate 19 can be connected to mobile terminal, the fingerprint image that fingerprint recognition module collects is transferred to described mobile terminal and identifies.
It should be noted that, the dura mater 111 be positioned on protective seam 11 surface has been shown in Fig. 5 a.
Step 28, on described substrate 19 and described protective seam 11, form metal support 20; described metal support 20 is electrically connected with described substrate 19; described metal support 20 has metal support through hole; described metal support through hole is corresponding with the induction zone of described fingerprint identification module, and described metal support through hole is by out exposed for described for part protective seam 11.
As shown in Figure 5 b, one end that described metal support 20 is connected with described substrate 19 has solder joint, and on described substrate 19, the place corresponding with the solder joint of metal support 20 also has solder joint, described metal support 20 can be electrically connected with described substrate 19 by described solder joint.Preferably, in order to increase the reliability that metal support 20 is connected with substrate 19, by jointing material, described metal support 20 is fixed on described substrate 19.Described metal support 20 has metal support through hole, described metal support through hole is by out exposed for described for part protective seam 11, exposed protective seam 11 is out corresponding with the induction region of described fingerprint identification module, for the protection of the induction zone of described fingerprint identification module, described fingerprint identification module can be capacitance type fingerprint identification module, when finger is put into above described protective seam 11, described finger forms a pole of electric capacity, there is in the induction zone of described fingerprint identification module another pole of electric capacity, by forming micro-electric current between the induction zone of human body with electric microfield and fingerprint identification module, distance between the Wave crest and wave trough of fingerprint and the induction zone of fingerprint identification module forms electric capacity difference of height, thus depict fingerprint image.The fingerprint image collected is transferred in the equipment such as mobile terminal and identifies by described fingerprint identification module.Described metal support 20 is except playing the effect of support and protection fingerprint identification module; support can be touched while the protective seam above finger contact to fingerprint identification module induction zone; form pulse circuit; marker pulse signal; play and drive fingerprint identification module effect, and the signal to noise ratio (S/N ratio) of fingerprint identification module can be improved.It should be noted that, described fingerprint identification module can also be optical fingerprint identification module or pressure-sensitive fingerprint identification module.
The method for packing of the fingerprint recognition module that the embodiment of the present invention provides, by the wafer scale protective seam of high rigidity and wafer are carried out bonding, this protective seam is formed in fingerprint recognition chip die level encapsulation process, avoid the assembling of later stage single fingerprint recognition chip cover sheet, reduce the cost of fingerprint recognition module, in addition, by wafer scale silicon through hole technology, the figure that reroutes being used for being electrically connected is formed in through hole, figure of avoiding rerouting is damaged owing to oppressing, improve the reliability of fingerprint recognition module electrical connection, and protective seam fits in above the induction zone of fingerprint identification module, reduce the distance between finger contact face to fingerprint identification module induction zone, improve sensitivity and the recognition efficiency of fingerprint recognition module.
Fig. 5 b is the encapsulating structure figure of a kind of fingerprint recognition module that the embodiment of the present invention provides, the method for packing of the fingerprint recognition module that described fingerprint recognition module can adopt above-described embodiment to provide obtains, this fingerprint recognition module can be applicable to, in the mobile terminals such as mobile phone, panel computer, notebook computer or media player, also can be applicable in the financial terminal equipments such as ATM.Described fingerprint recognition module comprises fingerprint identification module, substrate 19 and metal support 20, and wherein, described fingerprint identification module comprises protective seam 11, fingerprint recognition chip, reroute figure 16 and electrical connection liner 18.
The connecting electrode 13 that described fingerprint recognition chip comprises substrate 12 and is positioned on substrate 12, described fingerprint recognition chip attach is below described protective seam 11, the first through hole a1 is provided with in described substrate 12, the described figure 16 that reroutes is filled in described first through hole and is positioned on described substrate 12, described figure 16 and the described connecting electrode 13 of rerouting is electrically connected, reroute described in described electrical connection liner 18 is positioned on figure 16, described substrate 19 welds with described electrical connection liner 18, connect with described fingerprint recognition chip electrical to make described substrate 19, described metal support 20 is positioned on described substrate 19 and described protective seam 11, described metal support 20 is electrically connected with described substrate 19, described metal support 20 has metal support through hole, described metal support through hole is corresponding with the induction zone of described fingerprint identification module, described metal support through hole is by out exposed for described for part protective seam 11.
The material of described protective seam 11 can be the epoxide resin material of the glass material of strengthening, glass ceramic material or doping; described protective seam 11 and described fingerprint recognition chip carry out bonding by bonding material 14; described bonding material 14 can be glue, monox or glass paste, and described glue can be heat-sensitive glue or pressure sensitive adhesive etc.
Particularly, after the substrate 12 of fingerprint recognition chip can be thinned to target thickness by the first through hole be arranged in the substrate 12 of fingerprint recognition chip, formed by photoetching and silicon etching process.
The described figure 16 that reroutes is filled in described first through hole, and is electrically connected with described connecting electrode 13.The material of the described figure 16 that reroutes is metal.Described electrical connection liner 18 can be any one in metal gasket, metal salient point or soldered ball etc., when described electrical connection liner 18 is soldered balls, is formed, by described soldered ball, be electrically connected by substrate 19 with fingerprint identification module by BGA technique.Described metal support 20 supports except playing and except protection fingerprint identification module, can touch support while finger contact to fingerprint identification module induction zone, forms pulse circuit, marker pulse signal, plays and drive the effect of fingerprint recognition module.
Preferably; the encapsulating structure of the fingerprint recognition module that the embodiment of the present invention provides also comprises: be positioned at the dura mater 111 on protective seam 11; described dura mater 111 be positioned at described protective seam 11 not with the one side of described fingerprint recognition chip bonding; the material of described dura mater is preferably diamond like carbon, silicon nitride or silit; particularly; by physical vaporous deposition or chemical vapor deposition on described protective seam 11, to increase the hardness of protective seam 11.
Preferably, the encapsulating structure of described fingerprint recognition module also comprises the insulation course 15 being positioned at described first through-hole side wall and described substrate 12 surface.
Material due to described substrate 12 is silicon, therefore, arranges at the sidewall of described first through hole the short circuit or leakage phenomenon that cause when insulation course 15 can prevent substrate 12 to be directly electrically connected with the figure 16 that reroutes.
The encapsulating structure of the fingerprint recognition module that the embodiment of the present invention provides, by the wafer scale protective seam of high rigidity and wafer are carried out bonding, this protective seam is formed in fingerprint recognition chip die level encapsulation process, avoid the assembling of later stage single fingerprint identification module cover sheet, reduce the cost of fingerprint recognition module, in addition, by wafer scale silicon through hole technology, the figure that reroutes being used for being electrically connected is formed in the first through hole, figure of avoiding rerouting is damaged owing to oppressing, improve the reliability of fingerprint recognition module electrical connection, and protective seam fits in above the induction zone of fingerprint identification module, reduce the distance between finger contact face to fingerprint identification module induction zone, improve sensitivity and the recognition efficiency of fingerprint recognition module.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (17)
1. a method for packing for fingerprint identification module, is characterized in that, described method comprises:
There is provided protective seam and wafer, described wafer comprises substrate and is positioned at the connecting electrode on substrate;
The one side that described protective seam and described wafer have connecting electrode is carried out bonding;
Etch described substrate and form substrate through vias, described substrate through vias comprises the first through hole and the second through hole, and wherein, described first through hole is by out exposed for described connecting electrode, and described second through hole runs through described substrate;
In described first through hole and etching formed on the described substrate after substrate through vias and form the figure that reroutes, described in reroute figure and the electrical connection of described connecting electrode;
The described figure that reroutes is implanted electrical connection liner, forms wafer scale fingerprint recognition chip;
Along described second through hole, described wafer scale fingerprint recognition chip is cut, form multiple fingerprint identification module.
2. the method for packing of fingerprint identification module according to claim 1, is characterized in that, the size of described protective seam and the measure-alike of described wafer.
3. the method for packing of fingerprint identification module according to claim 1, is characterized in that, the material of described protective seam is the epoxide resin material of the glass material of strengthening, glass ceramic material or doping.
4. the method for packing of fingerprint identification module according to claim 1, is characterized in that, described protective seam and described wafer carry out bonding by the mode of hot glue bonding, monox bonding or glass paste bonding.
5. the method for packing of fingerprint identification module according to claim 1, is characterized in that, after the one side described protective seam and described wafer with connecting electrode carries out bonding, etch before described substrate forms substrate through vias, described method also comprises:
Reduction processing is carried out to described substrate.
6. the method for packing of fingerprint identification module according to claim 1, it is characterized in that, etch described substrate and form substrate through vias, after described substrate through vias comprises the first through hole and the second through hole, before described substrate in described first through hole and after etching formation substrate through vias forms the figure that reroutes, described method also comprises:
The surface of the described substrate after the surface of described first through hole, the surface of the second through hole and etching form substrate through vias forms insulation course;
Remove the described insulation course being positioned at described first via bottoms, by out exposed for described connecting electrode.
7. the method for packing of fingerprint identification module according to claim 1, it is characterized in that, described substrate in described first through hole and after etching formation substrate through vias forms the figure that reroutes, after described reroute figure and the electrical connection of described connecting electrode, before the described figure that reroutes is implanted electrical connection liner formation wafer scale fingerprint recognition chip, described method also comprises:
Described substrate after described reroute figure and etching formation substrate through vias forms packed layer;
Packed layer described in photoetching to reroute figure with exposed portion.
8. a fingerprint identification module, is characterized in that, comprising: protective seam, fingerprint recognition chip, reroute figure and electrical connection liner; Wherein,
Described fingerprint recognition chip comprises substrate and is positioned at the connecting electrode on substrate, and described fingerprint recognition chip attach is below described protective seam;
The first through hole is provided with in described substrate;
The described filling graph that reroutes in described first through hole and be positioned on described substrate, described in reroute figure and the electrical connection of described connecting electrode;
Reroute on figure described in described electrical connection liner is positioned at.
9. fingerprint identification module according to claim 8, is characterized in that, also comprises:
Be positioned at the insulation course of described first through-hole side wall and described substrate surface.
10. fingerprint identification module according to claim 8, is characterized in that, also comprises:
The packed layer rerouted described in being positioned on figure and described substrate.
The method for packing of 11. 1 kinds of fingerprint recognition modules, is characterized in that, comprises the method for packing of the arbitrary described fingerprint identification module of power 1-7, and following steps:
Substrate is welded with described electrical connection liner, is electrically connected with described fingerprint identification module to make described substrate;
Described substrate and described protective seam form metal support; described metal support is electrically connected with described substrate; described metal support has metal support through hole; described metal support through hole is corresponding with the induction zone of described fingerprint identification module, and described metal support through hole is by out exposed for described for part protective seam.
The method for packing of 12. fingerprint recognition modules according to claim 11, is characterized in that, before the one side described protective seam and described wafer with connecting electrode carries out bonding, described method also comprises:
Described protective seam forms dura mater.
The method for packing of 13. fingerprint recognition modules according to claim 12, is characterized in that, the material of described dura mater is diamond like carbon, silicon nitride or silit.
The method for packing of 14. fingerprint recognition modules according to claim 13, is characterized in that,
On described protective seam, dura mater is formed by chemical vapour deposition technique or physical vaporous deposition.
15. 1 kinds of fingerprint recognition modules, is characterized in that, comprise if claim 8 is to fingerprint identification module according to claim 10, and: substrate and metal support; Wherein,
Described substrate welds with described electrical connection liner, is electrically connected with described fingerprint identification module to make described substrate;
Described metal support is positioned on described substrate and described protective seam; described metal support is electrically connected with described substrate; described metal support has metal support through hole; described metal support through hole is corresponding with the induction zone of described fingerprint identification module, and described metal support through hole is by out exposed for described for part protective seam.
16. fingerprint recognition modules according to claim 15, is characterized in that, also comprise:
Be positioned at the dura mater on described protective seam.
17. fingerprint recognition modules according to claim 16, is characterized in that, the material of described dura mater is diamond like carbon, silicon nitride or silit.
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| CN109918966A (en) * | 2017-12-12 | 2019-06-21 | 中芯国际集成电路制造(北京)有限公司 | Fingerprint identification device and its manufacturing method, mobile terminal and Fingerprint Lock |
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